WO2018008334A1 - ガス配管システム、化学気相成長装置、成膜方法及びＳｉＣエピタキシャルウェハの製造方法 - Google Patents

ガス配管システム、化学気相成長装置、成膜方法及びＳｉＣエピタキシャルウェハの製造方法 Download PDF

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WO2018008334A1
WO2018008334A1 PCT/JP2017/021604 JP2017021604W WO2018008334A1 WO 2018008334 A1 WO2018008334 A1 WO 2018008334A1 JP 2017021604 W JP2017021604 W JP 2017021604W WO 2018008334 A1 WO2018008334 A1 WO 2018008334A1
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Prior art keywords
gas
line
piping system
vent
exhaust
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PCT/JP2017/021604
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English (en)
French (fr)
Japanese (ja)
Inventor
直人 石橋
啓介 深田
智也 歌代
章 坂東
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昭和電工株式会社
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Priority to CN201780038036.0A priority Critical patent/CN109314048A/zh
Priority to US16/314,084 priority patent/US20190169742A1/en
Publication of WO2018008334A1 publication Critical patent/WO2018008334A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Definitions

  • the present invention relates to a gas piping system, a chemical vapor deposition apparatus, a film forming method, and a SiC epitaxial wafer manufacturing method.
  • This application claims priority on July 7, 2016 based on Japanese Patent Application No. 2016-135282 for which it applied to Japan, and uses the content here.
  • Silicon carbide has excellent characteristics compared to silicon (Si), and is expected to be applied to power devices, high-frequency devices, high-temperature operation devices, and the like.
  • the dielectric breakdown electric field of SiC is an order of magnitude larger than that of Si
  • the band gap of SiC is three times larger than that of Si
  • the thermal conductivity of SiC is about three times higher than that of Si.
  • a SiC epitaxial wafer is manufactured by growing a SiC epitaxial layer serving as an active region of a SiC semiconductor device on a SiC single crystal substrate by a chemical vapor deposition (CVD) method.
  • CVD chemical vapor deposition
  • a source gas, a dopant gas, an etching gas, a carrier gas, and the like are supplied into the reaction furnace of the chemical vapor deposition apparatus.
  • a source gas, a dopant gas, an etching gas, a carrier gas, and the like are supplied into the reaction furnace of the chemical vapor deposition apparatus.
  • Patent Document 1 describes using ammonia as a dopant gas.
  • Patent Document 2 describes using hydrogen chloride as an etching gas and silane chloride as a source gas.
  • a high quality epitaxial wafer having high crystallinity of an epitaxial layer to be formed is required.
  • a lanvent type gas piping system described in Patent Document 3 is known.
  • the lanvent type gas piping system can suppress fluctuations in the flow rate and pressure of the gas introduced into the reaction furnace, and can suppress gas disturbance on the crystal growth surface.
  • the gas supplied into the reaction furnace may contain a gas that reacts with each other at room temperature to generate a solid product (hereinafter referred to as a deposition-causing gas).
  • the present invention has been made in view of the above problems, and an object thereof is to provide a gas piping system in which blockage of piping is suppressed.
  • the run line that sends gas to the reactor is a pipe through which the gas supplied to the reactor flows, so there is a high possibility that it will have a direct effect on crystal growth, and consideration has been given to prevent clogging and the like from occurring.
  • the vent line connected to the exhaust side is not a pipe for supplying gas to the reaction furnace, and has a low possibility of direct influence, and has not attracted attention.
  • the present inventors paid attention to the exhaust-side vent line as a result of intensive studies. And it discovered that obstruction
  • a gas piping system is a lanvent type gas piping system that supplies a plurality of gases to a reactor that performs vapor phase growth therein, and a plurality of the plurality of gases that respectively pass through the plurality of gases.
  • Supply line an exhaust line connected from an exhaust port of the reaction furnace to an exhaust pump, and a run line that branches from each of the plurality of supply lines and includes one or more pipes that supply the plurality of gases to the reaction furnace
  • a plurality of vent lines branched from the plurality of supply lines and connected to the exhaust line, respectively, and provided at branch points of the plurality of supply lines.
  • a plurality of valves for switching whether to flow gas, the plurality of vent lines are separated up to the exhaust line, and the inner diameter of the exhaust line is Greater than the inner diameter of each of the vent lines.
  • vent lines are connected to the exhaust line, and the remaining vent lines are connected to separate exhaust pumps provided independently. It may be configured.
  • a pipe inner diameter of the exhaust line at a connection point with each of the plurality of vent lines may be 3 cm or more.
  • the chemical vapor deposition apparatus concerning a 1st aspect is provided with the gas piping system concerning the said aspect, and the reaction furnace connected to the said gas piping system.
  • the film forming method according to the first aspect is a film forming method using the chemical vapor deposition apparatus according to the above aspect, wherein a deposition-causing gas that reacts with each other at room temperature to generate a solid compound, They are routed through different vent lines.
  • each concentration of the deposition-causing gas is 5% or less of the total gas passing through the exhaust line. May be.
  • the SiC epitaxial wafer manufacturing method according to the first aspect is a SiC epitaxial wafer manufacturing method using the film forming method according to the above aspect, wherein the deposition-causing gas contains N atoms in the molecule. And a basic N-based gas composed of molecules having neither a double bond nor a triple bond between N atoms, and a Cl-based gas composed of molecules containing Cl atoms in the molecule.
  • gas piping system According to the gas piping system according to the above aspect, blockage of piping can be suppressed. As a result, it is possible to suppress the difference in the gas flow rate and gas pressure between the run line and the vent line of the chemical vapor deposition apparatus, and to increase the degree of freedom for setting conditions during crystal growth.
  • FIG. 1 is a schematic diagram of a chemical vapor deposition apparatus according to a first embodiment. It is a schematic diagram of the chemical vapor deposition apparatus which joins until a vent line reaches an exhaust line. It is a schematic diagram of the chemical vapor deposition apparatus concerning 2nd Embodiment. It is a schematic diagram of the chemical vapor deposition apparatus concerning 3rd Embodiment.
  • FIG. 1 is a schematic diagram of a chemical vapor deposition apparatus according to the first embodiment.
  • a chemical vapor deposition apparatus 100 shown in FIG. 1 includes a gas piping system 10, a reaction furnace 20, and an exhaust pump 30.
  • a plurality of gases are supplied from the gas piping system 10 to the reaction furnace 20.
  • Known reactors 20 and exhaust pumps 30 can be used.
  • the gas piping system 10 is a lan vent type gas piping system including a supply line 1, an exhaust line 2, a run line 3, a vent line 4, and a valve 5.
  • a plurality of supply lines 1 are provided for each gas supplied to the reactor 20.
  • One end of each supply line 1 is connected to gas supply means (not shown) such as a gas cylinder.
  • Each supply line 1 branches into a run line 3 and a vent line 4.
  • Valves 5 for controlling the gas flow are respectively provided at the branch portions.
  • valve 5 there is one valve 5 on the run line side and one on the vent line side, forming a valve pair.
  • the pair of valves are of the same shape and are symmetrically arranged as close as possible to the branch point of the supply line 1.
  • a plurality of such valve pairs are installed at close positions depending on the type of gas to be supplied. By disposing the valve in a close position, it is possible to minimize the occurrence of a delay in switching of each supply gas when the gas supplied during the epitaxial growth process is switched by the valve.
  • a block valve in which a plurality of such pair valves are combined in a block shape may be used as the valve 5.
  • the paired valves 5 are used so that when one gas is circulated, the other is closed when the gas is circulated. That is, the paired valves 5 are not opened simultaneously. For example, by first opening the vent line side to stabilize the flow rate, and simultaneously opening the run line side and closing the vent line side, the flow rate fluctuates during valve control, and the gas It is possible to prevent the flow rate from being disturbed.
  • the run line 3 connects the valve 5 and the reactor 20.
  • the pipes branched from the respective supply lines 1 are joined in the process of connecting the valve 5 and the reactor 20. That is, the run line 3 is configured as one manifold.
  • the run line 3 is configured as one manifold.
  • the position on the run line side of the valve 5 can be brought close to the branch point of the supply line 1.
  • the position of the valve 5 on the run line side is close to the branch point of the supply line 1, as described above, when the gas supplied during the epitaxial growth process is switched, the switching of each supply gas is minimized. can do.
  • the vent line 4 connects the valve 5 and the exhaust line 2.
  • the exhaust line 2 is a pipe connecting the exhaust port of the reaction furnace 20 and the exhaust pump 30. Each vent line 4 branched from the supply line 1 is separated up to the exhaust line 2. Therefore, the gases flowing in the vent line 4 are not mixed until reaching the exhaust line 2.
  • the gas used for crystal growth of the SiC epitaxial wafer will be described.
  • a plurality of gases such as a source gas, a dopant gas, an etching gas, and a carrier gas are used.
  • a plurality of gases used for crystal growth of the SiC epitaxial wafer are “Si-based gas”, “C-based gas”, “Cl-based gas”, “N-based gas”, “other impurity doping gas”, “others”.
  • the gas is divided into six categories.
  • the “Si-based gas” is a gas containing Si as a constituent element of molecules constituting the gas.
  • Si silane
  • SiH 4 dichlorosilane
  • SiHCl 3 trichlorosilane
  • SiCl 4 tetrachlorosilane
  • Si-based gas is used as one of source gases.
  • the “C-based gas” is a gas containing C as a constituent element of molecules constituting the gas.
  • propane (C 3 H 8 ) or the like is applicable.
  • the C-based gas is used as one of source gases.
  • the “Cl-based gas” is a gas containing Cl as a constituent element of molecules constituting the gas.
  • hydrogen chloride (HCl) dichlorosilane (SiH 2 Cl 2 ), trichlorosilane (SiHCl 3 ), tetrachlorosilane (SiCl 4 ), and the like are applicable.
  • dichlorosilane (SiH 2 Cl 2 ), trichlorosilane (SiHCl 3 ), and tetrachlorosilane (SiCl 4 ) are also the above Si-based gases. Like these gases, it may be “Cl-based gas” and “Si-based gas”.
  • the Cl-based gas is used as a source gas or an etching gas.
  • N-based gas is a gas containing N as a constituent element of molecules constituting the gas, and a basic gas composed of molecules having neither double bonds or triple bonds between N atoms.
  • Gas For example, methylamine (CH 5 N), dimethylamine (C 2 H 7 N), trimethylamine (C 3 H 9 N), aniline (C 6 H 7 N), ammonia (NH 3 ), hydrazine (N 2 H 4 ), Dimethylhydrazine (C 2 H 8 N 2 ), and any one of the group consisting of other amines. That is, N 2 does not correspond to an N-based gas, although N is included as a constituent element of molecules constituting the gas.
  • the N-based gas is used as one of impurity doping gases.
  • “Other impurity doping gas (not shown)” is an impurity doping gas other than N-based gas and Cl-based gas.
  • N-based gas and Cl-based gas For example, N 2 , trimethylaluminum (TMA), and the like are applicable.
  • “Other gas” is a gas that does not correspond to the above five categories of gases. For example, Ar, He, H 2 and the like are applicable. These gases are gases that support the manufacture of SiC epitaxial wafers.
  • the “other gas” is used as a carrier gas that supports the gas flow in order to efficiently supply the source gas to the SiC wafer, for example.
  • a basic N-based gas and an acidic Cl-based gas undergo a chemical reaction when mixed to produce a solid product.
  • ammonia is mixed as the N-based gas and hydrogen chloride is mixed as the Cl-based gas
  • ammonium chloride (NH 4 Cl) is formed.
  • methylamine CH 5 N
  • hydrogen chloride is mixed as the Cl-based gas
  • monomethylamine hydrochloride CH 5 N ⁇ HCl
  • ammonium chloride is formed when ammonia is mixed as N-based gas and dichlorosilane is mixed as Cl-based gas.
  • the sublimation temperature of ammonium chloride is 338 ° C.
  • the melting point of monomethylamine hydrochloride is 220 to 230 ° C. and the boiling point is 225 to 230 ° C. That is, at a normal temperature of 60 ° C. or lower, these solid products are produced.
  • these gases are separately supplied from the gas supply means (not shown) to the supply line 1.
  • the supply line 1 is supplied with a high purity gas supplied from a gas cylinder or a gas tank. For this reason, the supply line 1 is usually provided for each gas type used in the manufacture of a SiC epitaxial wafer. A plurality of gases may be supplied to one supply line 1 as long as they are gas species that do not generate a solid product when mixed.
  • the gas supplied to the supply line 1 reaches the valve 5 respectively.
  • the valve 5 switches between flowing gas to the run line 3 side or flowing gas to the vent line 4 side.
  • gas is allowed to flow toward the run line 3, and when it is not necessary, gas is allowed to flow toward the vent line 4.
  • the gas flowing in the run line 3 reacts in the reaction furnace 20 and is discharged from the exhaust pump 30 through the exhaust line 2.
  • the gas that has flowed to the vent line 4 flows to the exhaust line 2 as it is, and is discharged from the exhaust pump 30.
  • the gas can be supplied to the reaction furnace by switching the valve 5 while keeping the flow rate of the gas flowing through the supply line 1 constant. For this reason, the amount of gas supplied from the supply line 1 is stabilized from the beginning when the gas begins to flow into the reaction furnace, and the flow rate fluctuation of the gas supplied due to gas switching is suppressed. By suppressing fluctuations in the gas flow rate and gas pressure of the supply gas, the crystal growth of the epitaxial film is prevented from becoming unstable.
  • both the N-based gas (reference symbol G1) and the Cl-based gas (reference symbol G2) supplied from the supply line 1 are controlled by the valve 5. , Flows to the vent line 4 side.
  • the vent line 4 is separated for each gas. Therefore, the N-based gas and the Cl-based gas are not mixed until reaching the exhaust line 2. If the N-based gas and the Cl-based gas are not mixed, a solid product is not generated in the vent line 4 and the vent line 4 is not blocked.
  • the vent line 14 joins the exhaust line 2. Therefore, in the vent line 14, the N-based gas and the Cl gas are mixed to generate a solid product. As a result, the vent line 14 is blocked.
  • the gas supply unit is arranged upstream of the reactor, and the distance to the reactor is generally short.
  • the vent line is led to the downstream side of the reactor and piped, so it may be longer than the run line side and is easily blocked.
  • the vent line 14 generally uses a narrow pipe having an inner diameter of 1/4 inch (9.2 mm) or 3/8 inch (12.7 mm), and is easily blocked.
  • vent line 14 When the vent line 14 is blocked, the conductance of the vent line 14 decreases, and the ease of gas flow changes between the run line 3 and the vent line 14. In other words, the lanvent system for the purpose of suppressing the gas flow rate and pressure fluctuations does not function. In some cases, the vent line 14 may be completely clogged, and gas may not flow to the vent line 14 side.
  • the N-based gas and the Cl-based gas are merged in the exhaust line 2. Therefore, the exhaust line 2 may be blocked.
  • the exhaust line 2 needs to discharge the gas in the reaction furnace 20, and a pipe that is thicker than the vent line 4 is used.
  • the gas flow rate is faster than that of the vent line 4. For this reason, it is not assumed in normal use that the solid product is deposited as the exhaust line 2 is blocked, and the change is so large that the conductance of the exhaust line 2 is affected.
  • the inner diameter of the pipe at the connection point between the exhaust line 2 and the vent line 4 is 3 cm or more.
  • the pipe inner diameter of the exhaust line 2 is preferably 5 times or more the pipe inner diameter of the vent line 4.
  • the gas concentrations of the N-based gas and the Cl-based gas that are the deposition cause gases are 5% or less of the total gas passing through the exhaust line 2.
  • the deposition cause gas is not mixed in the vent line 4, and the piping of the vent line 4 is not blocked. If the vent line 4 is not blocked, the gas flow rate and pressure fluctuation of the chemical vapor deposition apparatus 100 as a whole can be suppressed, and a high-quality film can be manufactured stably. Moreover, the gas amount etc. which flow into the vent line 4 can be set freely, and the freedom degree of the setting which controls the chemical vapor deposition apparatus 100 can be raised.
  • FIG. 3 is a schematic diagram of a chemical vapor deposition apparatus 110 according to the second embodiment.
  • the gas piping system 15 in the chemical vapor deposition apparatus 110 according to the second embodiment is different in that the run line 13 is separated until reaching the reaction furnace 20.
  • Other configurations are the same as those of the chemical vapor deposition apparatus 100 according to the first embodiment, and the same components are denoted by the same reference numerals.
  • run lines 13 are separated from each other, it is possible to prevent the cause gas from mixing in the run line 13. That is, the blockage in the run line 13 can be suppressed.
  • the timing for supplying the necessary gas to the reaction furnace 20 from the chemical vapor deposition apparatus 100 according to the first embodiment may be shifted.
  • the gas flow rate program is determined with priority given to the run line that flows to the reactor 20 side during epitaxial growth.
  • the run line can be set with priority on control such as gas switching for suppressing the blockage, and it is easy to perform control that does not cause blockage compared to the vent line.
  • the vent line of the gas piping system according to the above embodiment is applied, the condition on the run line side can be set without considering the block on the vent line side.
  • the restrictions on the run line are reduced, and the epitaxial growth conditions can be set more freely.
  • FIG. 4 is a schematic diagram of a chemical vapor deposition apparatus 120 according to the third embodiment.
  • a part of the vent line 24 is connected to the exhaust line 2 and the other vent line 24 is provided to another exhaust pump 31 provided independently. The connection is different.
  • Other configurations are the same as those of the chemical vapor deposition apparatus 100 according to the first embodiment, and the same components are denoted by the same reference numerals.
  • the deposition cause gas does not merge in the exhaust line 2. That is, the deposition-causing gas is completely separated from supplying to the gas piping system 16 until discharging. Therefore, a solid product is not generated by mixing the deposition cause gas.
  • the SiC epitaxial wafer is manufactured has been described as an example, but the present invention is not limited to this case, and the chemical vapor deposition apparatus according to the above-described embodiment can be used when other films are manufactured.

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PCT/JP2017/021604 2016-07-07 2017-06-12 ガス配管システム、化学気相成長装置、成膜方法及びＳｉＣエピタキシャルウェハの製造方法 WO2018008334A1 (ja)

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JP7365946B2 (ja) * 2020-03-18 2023-10-20 東京エレクトロン株式会社 基板処理装置及びクリーニング方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6441128U (zh) * 1987-09-07 1989-03-13
JPS6489513A (en) * 1987-09-30 1989-04-04 Furukawa Electric Co Ltd Method of checking leakage in vapor growth device
JPH02143419A (ja) * 1988-11-25 1990-06-01 Hitachi Ltd 気相成長による薄膜形成方法及びその装置
JPH04293778A (ja) * 1991-03-22 1992-10-19 Rohm Co Ltd Ｃｖｄ装置のための排気装置
JP2005322668A (ja) * 2004-05-06 2005-11-17 Renesas Technology Corp 成膜装置および成膜方法
JP2006339461A (ja) * 2005-06-02 2006-12-14 Elpida Memory Inc 半導体装置製造用成膜装置および成膜方法
JP2014123617A (ja) * 2012-12-20 2014-07-03 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法および製造装置
JP2016117609A (ja) * 2014-12-19 2016-06-30 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣエピタキシャル成長装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1788106B (zh) * 2003-05-13 2011-06-08 东京毅力科创株式会社 使用原料气体和反应性气体的处理装置
US20050103265A1 (en) * 2003-11-19 2005-05-19 Applied Materials, Inc., A Delaware Corporation Gas distribution showerhead featuring exhaust apertures

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6441128U (zh) * 1987-09-07 1989-03-13
JPS6489513A (en) * 1987-09-30 1989-04-04 Furukawa Electric Co Ltd Method of checking leakage in vapor growth device
JPH02143419A (ja) * 1988-11-25 1990-06-01 Hitachi Ltd 気相成長による薄膜形成方法及びその装置
JPH04293778A (ja) * 1991-03-22 1992-10-19 Rohm Co Ltd Ｃｖｄ装置のための排気装置
JP2005322668A (ja) * 2004-05-06 2005-11-17 Renesas Technology Corp 成膜装置および成膜方法
JP2006339461A (ja) * 2005-06-02 2006-12-14 Elpida Memory Inc 半導体装置製造用成膜装置および成膜方法
JP2014123617A (ja) * 2012-12-20 2014-07-03 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法および製造装置
JP2016117609A (ja) * 2014-12-19 2016-06-30 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣエピタキシャル成長装置

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