WO2017215154A1 - 沉积设备以及物理气相沉积腔室 - Google Patents

沉积设备以及物理气相沉积腔室 Download PDF

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Publication number
WO2017215154A1
WO2017215154A1 PCT/CN2016/101565 CN2016101565W WO2017215154A1 WO 2017215154 A1 WO2017215154 A1 WO 2017215154A1 CN 2016101565 W CN2016101565 W CN 2016101565W WO 2017215154 A1 WO2017215154 A1 WO 2017215154A1
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Prior art keywords
chamber
shielding
physical vapor
vapor deposition
substrate
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PCT/CN2016/101565
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English (en)
French (fr)
Inventor
张军
董博宇
赵晋荣
武学伟
郭冰亮
徐宝岗
张鹤南
王桐
刘绍辉
王军
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to US15/551,493 priority Critical patent/US10984994B2/en
Priority to KR1020177035747A priority patent/KR102078326B1/ko
Priority to MYPI2018002526A priority patent/MY193979A/en
Priority to SG11201810530YA priority patent/SG11201810530YA/en
Publication of WO2017215154A1 publication Critical patent/WO2017215154A1/zh
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Definitions

  • the present invention relates to a semiconductor processing apparatus, and more particularly to a deposition apparatus and a physical vapor deposition chamber.
  • PVD Physical vapor deposition
  • sputtering has been widely used in the fabrication of today's semiconductor integrated circuits, light emitting diodes (LEDs), solar cells, and displays.
  • a high-power DC power source to the sputtering target
  • the working gas in the reaction chamber is excited into a plasma by a DC power source, and attracts ions in the plasma.
  • the sputtering target is bombarded, whereby the material of the target is sputtered down and deposited on a wafer or other substrate.
  • Different application fields usually require different process parameters such as sputtering power and sputtering rate, but basically the direction of improving the film quality and increasing the equipment capacity is very clear.
  • the present invention provides a deposition apparatus and a physical vapor deposition chamber, wherein a physical heat vapor deposition chamber is provided with a heat source capable of heating the chamber to 400 degrees Celsius or more, whereby the loaded substrate Preheating, venting, and sputtering can be performed in a high temperature environment of a physical vapor deposition chamber, thereby reducing the volume and cost of the device, shortening the process time, and increasing productivity.
  • Some embodiments of the present invention provide a deposition apparatus including a first chamber, a second chamber, and a third chamber.
  • the first chamber is configured to load a substrate.
  • Second chamber configuration for providing The high temperature environment is such that the substrate is subjected to an exhaust process and a sputtering process in the second chamber.
  • the third chamber is disposed between the first chamber and the second chamber. The third chamber is configured to transfer the substrate directly from the first chamber through the third chamber to the second chamber.
  • Some embodiments of the present invention provide a physical vapor deposition chamber including a chamber body, a target, a carrier base, and a heat source.
  • the carrier base is disposed in the chamber body for carrying the substrate.
  • the heat source is disposed in the chamber body, and the heat source is configured to heat the chamber body to a high temperature environment to perform an exhaust process and a sputtering process on the substrate.
  • the deposition apparatus of the present invention includes a first chamber, a second chamber, and a third chamber, wherein the third chamber is in communication with the first chamber and the second chamber and configured to transfer the substrate directly from the first chamber To the second chamber.
  • the second chamber is configured to perform an exhaust process and a sputtering process on the substrate, thereby eliminating the need for additional preheat/exhaust chambers and thereby reducing the size and cost of the apparatus.
  • the heat source provided in the chamber body can be used to heat the chamber body to a high temperature environment to perform an exhaust process and a sputtering process on the substrate loaded into the chamber body. There is no need to set up additional preheat/exhaust chambers and thus reduce the size and cost of the equipment.
  • Figure 1 is a schematic illustration of a deposition apparatus in accordance with some embodiments of the present invention.
  • FIG. 2 is a schematic flow chart showing an operation of a deposition apparatus according to some embodiments of the present invention.
  • FIG. 3 is a schematic view of a physical vapor deposition chamber according to some embodiments of the present invention.
  • FIG. 4 is a schematic flow chart of a sputtering process performed by a physical vapor deposition chamber according to some embodiments of the present invention
  • Figure 5 is a schematic illustration of a physical vapor deposition chamber in accordance with some embodiments of the present invention.
  • 6A is a schematic view showing a state in which a physical vapor deposition chamber performs a sputtering process according to some embodiments of the present invention
  • 6B is a schematic view showing a state in which a physical vapor deposition chamber performs a sputtering process according to some embodiments of the present invention
  • FIG. 7 is a schematic diagram of a connection state between a shielding disk and a transmission unit according to some embodiments of the present invention.
  • FIG. 8A is a schematic view showing a state in which a physical vapor deposition chamber performs a sputtering process according to some embodiments of the present invention
  • FIG. 8B is a schematic view showing a state in which a physical vapor deposition chamber performs a sputtering process according to some embodiments of the present invention.
  • Figure 9 is a schematic illustration of a deposition apparatus in accordance with some embodiments of the present invention.
  • FIG. 10 is a schematic flow chart showing the operation of a deposition apparatus according to some embodiments of the present invention.
  • the second chamber is configured to provide a high temperature environment for the substrate to be subjected to an exhaust process and a sputtering process in the second chamber, thereby eliminating other preheating and/or The exhaust chamber and thus the effect of reducing equipment volume and cost.
  • a heat source disposed in the chamber body may be utilized to heat the chamber body to a high temperature environment to exhaust the substrate and the substrate in the loading chamber body.
  • the shot process eliminates the need for additional preheat/exhaust chambers and thus reduces equipment size and cost.
  • step as used in this specification is not limited to a single action, and the term “step” may include a single action, operation, or technique, or may be a collection of multiple actions, operations, and/or techniques. .
  • FIG. 1 is a schematic view of a deposition apparatus according to some embodiments of the present invention
  • FIG. 2 is a schematic flow chart showing the operation of a deposition apparatus according to some embodiments of the present invention.
  • some embodiments of the present invention provide a deposition apparatus M1 including a first chamber 100, a second chamber 200, and a third chamber 300.
  • the first chamber 100 is configured to load a substrate (not shown in FIG. 1 and FIG. 2), so the first chamber 100 can be regarded as a loading/unloading chamber, but is not limited thereto.
  • the second chamber 200 is configured to provide a high temperature environment to cause the loaded substrate to undergo an exhaust process and a sputtering process within the second chamber 200.
  • the third chamber 300 is disposed between the first chamber 100 and the second chamber 200 and is connected to the first chamber 100 and the second chamber 200.
  • the third chamber 300 is configured to transfer the substrate directly from the first chamber 100 through the third chamber 300 to the second chamber 200.
  • the third chamber 300 can be regarded as a transfer chamber, but is not limited thereto.
  • the operation process of the deposition apparatus M1 may be The following steps S1, S2, and S3 are included.
  • step S1 the substrate is loaded into the first chamber 100 of the deposition apparatus M1.
  • step S2 the substrate is directly transferred from the first chamber 100 through the third chamber 300 to the second chamber 200 (that is, the physical vapor deposition chamber).
  • step S3 a degas process and a sputtering process are performed on the substrate in the second chamber 200.
  • the deposition apparatus M1 may further include a heat source (not shown in FIG. 1 and FIG.
  • the heat source is configured to provide the high temperature environment described above, and the second chamber
  • the high temperature environment of 200 is, for example, above 400 degrees Celsius, so that the environment in the substrate and/or the second chamber 200 can be heated before and/or during the sputtering process using a heat source.
  • the temperature in the second chamber 200 is heated by the heat source to be higher than the crystallization temperature of the material layer to be deposited on the surface of the substrate, such as an aluminum nitride film
  • the temperature in the physical vapor deposition chamber may be higher than 400 degrees Celsius, or preferably It may be between 400 degrees Celsius and 800 degrees Celsius, or more preferably between 500 degrees Celsius and 700 degrees Celsius, while producing exhaust and/or high temperature activation effects on the substrate and/or substrate surface.
  • the second chamber 200 can also be regarded as an exhaust gas and a physical vapor deposition chamber, but is not limited thereto.
  • the temperature condition of the physical vapor deposition process can be achieved by continuously heating by the heat source in the second chamber 200, and the temperature can be higher than the crystallization temperature of the film formed by the physical vapor deposition process, thereby physics
  • the film formation quality of the vapor deposition process has a positive effect.
  • the high temperature conditions described above in the physical vapor deposition chamber also have a positive effect on the target and chamber conditions.
  • the above-described high temperature condition may cause the crystal particles of the target to become large to reduce particle-related defects, and further, on the assembly of the shielding unit (not shown) in the physical vapor deposition chamber at a high temperature.
  • the film is also less prone to cracking, which also helps to improve particle-related defects.
  • the physical vapor deposition chamber of the present embodiment can be coated after one batch of sputtering, and since the chamber is in an environment above 400 degrees Celsius, only low power is required.
  • the time required for the coating process can be shortened, and the number and frequency of the pasting process can be reduced, so that the overall process time can be shortened and the front end of the target life can be also helped. help.
  • the coating process of the known physical vapor deposition chamber requires high power and lasts for several tens of minutes, and the number and frequency of coating treatment are high, which not only increases the overall process time, but also causes the use of the target. Life expectancy is reduced.
  • the exhaust process and the sputtering process can be performed in the second chamber 200, the arrangement of the exhaust chamber and/or other heating chambers can be omitted, thereby achieving the effect of reducing the volume and cost of the device.
  • the design of the deposition apparatus and the physical vapor deposition chamber of the present invention can also simplify the fabrication process, and can prevent the substrate from falling on the substrate during the transfer to the sputtering chamber after the heating chamber is heated, thereby causing correlation. defect.
  • the above high temperature environment may preferably be higher than 400 degrees Celsius, thereby effectively achieving the effect of exhausting the substrate and/or high temperature activation, and when the physical vapor deposition process is a high temperature physical vapor deposition process, the second cavity may be utilized
  • the heat source in chamber 200 is continuously heated to achieve a high temperature physical vapor deposition process.
  • the substrate may not be preheated and/or vented through other heating chambers after loading the deposition apparatus M1 and before the second chamber 200 is subjected to an exhaust process and a sputtering process.
  • the third chamber 300 may not be coupled to any of the heating chambers except for the second chamber 200.
  • deposition apparatus M1 does not include other heating chambers other than second chamber 200 (ie, a physical vapor deposition chamber).
  • the physical vapor deposition chamber (ie, the second chamber 200) includes a chamber body 10, a target T, a carrier base 20, and a heat source 21.
  • the carrier base 20 is disposed in the chamber body 10 at a distance from the target T, and the carrier base 20 has a bearing surface 20S opposite to the target T for carrying the substrate W.
  • the heat source 21 is disposed in the chamber body 10, and the heat source 21 is configured to use the chamber body 10 is heated to above 400 degrees Celsius (preferably between 400 degrees Celsius and 800 degrees Celsius, and more preferably between 500 degrees Celsius and 700 degrees Celsius) to vent the substrate W and Sputtering process.
  • the heat source 21 may include a radiant heat source, and the radiant heat source may include a plurality of heating lamps 21T, and the substrate W may be disposed between the heat source 21 and the target T, but the present invention does not This is limited.
  • the physical vapor deposition chamber (ie, the second chamber 200) can include a transfer unit 41 and a masking disk 42. At least a portion of the transport unit 41 is disposed within the chamber body 10, the shield disc 42 is secured to the transport unit 41, and the transport unit 41 is configured to move the shield disc 42 between the load bearing surface 20S and the target T, and to shield The disk 42 is also located between the carrier base 20 and the target T.
  • the transmission unit 41 can move the shielding disk 42 between the bearing surface 20S and the target T by means of, for example, a rotation mode, a translation mode or other suitable manner, and since the shielding disk 42 is fixed to the transmission unit 41, the shielding disk 42 does not need to be placed on the carrier base 20.
  • the substrate W to be sputtered can still be carried on the carrying base 20, so by means of the second chamber 200 (that is, the physical vapor deposition chamber)
  • the design of the surface T of the target T can be performed under the condition that the physical vapor deposition chamber has been loaded with the substrate W, thereby achieving the effect of shortening the process time and increasing the productivity.
  • one or more substrates W may be first placed on a tray (not shown), and the tray on which the substrate W is placed is loaded through the first chamber 100 and the third chamber 300 described above.
  • the chamber body 10 of the physical vapor deposition chamber is placed on the carrier base 20.
  • the substrate W may be placed directly on the carrier base 20 without the use of a tray.
  • the substrate W may include a single material substrate or a composite layer material substrate formed of a sapphire substrate, a silicon carbide (SiC) substrate, or other suitable materials, such as a silicon substrate, a silicon-on-insulator (SOI) substrate, or a glass.
  • the substrate or the ceramic substrate, and the shielding disk 42 may be made of a high temperature resistant material such as silicon carbide (SiC) or molybdenum, but is not limited thereto.
  • the chamber body 10 and the components within the chamber body 10 are preferably metal molybdenum, low carbon stainless steel, quartz or other high temperature resistant metal. Or a non-metallic material, whereby the high temperature environment described above can be formed in the chamber body 10 or other high temperature process can be performed without causing qualitative change or deformation.
  • the sputtering process SR performed in the physical vapor deposition chamber may include the following steps S11, S12, and S13. Step S14, step S15, step S16, and step S17.
  • step S11 the substrate W is loaded into the physical vapor deposition chamber.
  • step S12 an exhaust process is performed on the physical vapor deposition chamber.
  • the exhausting process can be realized by heating the chamber body 10 to a high temperature environment by using the heat source 21, and the high temperature environment can generate an exhausting and/or activating effect on the substrate W, so the high temperature environment is preferably higher than the surface to be deposited on the substrate.
  • the crystallization temperature of the material layer such as the aluminum nitride film (for example, the temperature in the physical vapor deposition chamber may be higher than 400 degrees Celsius, or preferably between 400 degrees Celsius and 800 degrees Celsius, but not limited thereto) ).
  • the shielding disk 42 is moved by the transport unit 41 between the carrying surface 20S and the target T.
  • a surface modification process is performed on the target.
  • the masking tray 42 is removed by the transport unit 41.
  • the substrate W is sputtered by the target T in the chamber body 10 to form a thin film on the substrate W.
  • the substrate W on which the thin film is formed is carried out of the physical vapor deposition chamber.
  • the substrate W has been loaded into the chamber body 10 when the target T is subjected to the surface modification process, since the masking disk 42 is located between the bearing surface 20S and the target T, the material of the target T can be prevented from being formed onto the substrate W.
  • the chamber body 10 can be opened after the surface modification process of the target T to load the substrate W, so that the process state when sputtering the stable substrate W is positive.
  • the utility model also saves the time required to stabilize the chamber body 10 due to the loading of the substrate W, thereby shortening the overall time of the sputtering process SR and achieving the effect of increasing the productivity.
  • the action of the heat source 21 forming a high temperature environment within the chamber body 10 can be regarded as a heating process, and at least a portion of the heating process can be performed simultaneously with the surface modification process of the target W, thereby achieving a shortened overall The effect of process time.
  • the physical vapor phase sinks When the accumulation process is a high temperature physical vapor deposition process, the high temperature physical vapor deposition process can be realized by continuously heating by the heat source 21 in the second chamber 200.
  • the heat source 21 can be disposed within the chamber body 10, and the heat source 21 can heat the second chamber 200 to 400 degrees Celsius or above, so that the heat source 21 is configured to control the temperature within the chamber body 10.
  • the chamber body 10 and/or the substrate W may be heated by the heat source 21 to achieve the degassing effect and/or the physical vapor deposition process.
  • the process temperature required In performing the above heating process and/or physical vapor deposition process, the chamber body 10 and/or the substrate W may be heated by the heat source 21 to achieve the degass
  • the sputtering process SR performed by the physical vapor deposition chamber described above is merely an example, and the present invention is not limited to the content of the sputtering process SR described above, and other additional steps required may be before, after, and after the sputtering process SR. / or wherein it is carried out, and the steps described in the sputtering process SR can also be substituted, deleted or changed in other embodiments.
  • the deposition apparatus and the physical vapor deposition chamber described above may be used to form a non-metal film, a metal film, or a metal compound film such as an aluminum nitride (AlN) film, but are not limited thereto.
  • the second chamber 200 can be an aluminum nitride physical vapor deposition chamber configured to form an aluminum nitride film on the substrate W.
  • Figure 5 is a schematic illustration of a physical vapor deposition chamber in accordance with some embodiments of the present invention.
  • the physical vapor deposition chamber 201 may further include a shielding unit 30 disposed in the chamber body 10.
  • the shielding unit 30 is disposed between the target T and the carrier base 20 when When the shielding disk 42 is moved between the bearing surface 20S and the target T, the shielding disk 42 is also located between the bearing base 20 and the shielding unit 30.
  • the bearing base 20 can be disposed corresponding to the shielding unit 30 in the first direction D1.
  • the first direction D1 can be regarded as a vertical direction, but is not limited thereto.
  • the shielding unit 30 is disposed on the carrying base in the first direction D1 20 and between the target T.
  • the shielding disk 42 is fixed to the transmission unit 41, and the transmission unit 41 is configured to move the shielding disk 42 between a temporary position P1 and a blocking position P2 in the second direction D2, and to shield the disk 42 at the blocking position P2. It is located between the bearing surface 20S and the target T, and the shielding disk 42 is also located between the bearing surface 20S and the shielding unit 30.
  • the second direction D2 can be regarded as a horizontal direction, but is not limited thereto.
  • the transmission unit 41 can move the shielding disk 42 between the bearing surface 20S and the target T by means of, for example, a rotating manner, a translation mode or other suitable manner, or can be said to temporarily dispose the shielding disk 42 in the second direction D2.
  • the position P1 moves between the occlusion position P2 and is not limited thereto.
  • the shielding disk 42 since the shielding disk 42 is fixed to the transport unit 41, the shielding disk 42 does not need to be placed on the carrier base 20.
  • the physical vapor deposition chamber 201 can further include a plurality of thimbles 22 disposed on the carrier base 20, and the thimbles 22 are configured to lift the substrate W from the surface of the carrier base 20.
  • the thimble 22 can include a temperature-measuring thimble for detecting the temperature within the chamber body 10 and/or the substrate W, but is not limited thereto.
  • the masking disk 42 can have an adhesive surface, at least a portion of the adhesive surface facing the target T, and the adhesive surface can include a rough surface or be treated via a suitable surface such as sandblasting, spraying or surface
  • the adhesive surface formed by roughening or the like is used to increase the bonding ability of the shielding disk 42 and the material of the target T, so that the upper surface of the shielding disk 42 can adsorb more materials dropped by the target T, thereby strengthening The effect of shielding the shielding effect of the disk 42.
  • FIG. 6A and FIG. 6B are schematic diagrams showing a state in which a physical vapor deposition chamber performs a sputtering process according to some embodiments of the present invention
  • FIG. 7 is a schematic diagram of a connection state between a shielding disk and a transmission unit according to some embodiments of the present invention.
  • the shielding plate 42 can be moved to be located between the bearing surface 20S and the target T by the transmission unit 41, and can also be said to transmit the shielding disk 42 to the blocking position P2 located above the substrate W; or, for example, As shown in FIG.
  • the shielding disk 42 can be moved by a transmission unit 41 through a port 51 to a temporary position P1 formed by a shielding disk magazine 50.
  • a sealing process can be performed between the shield tray 50 and the chamber body 10, taking into account the shield tray 50 and the chamber body.
  • the vacuum integrity between the 10, the shield tray 50 can also be welded to the chamber body 10 or formed in one piece.
  • the transmission unit 41 can move the shielding disk 42 between the bearing surface 20S and the target T in a rotating manner or other suitable manner, and can also be said to block the shielding disk 42 in the second direction D2 at the temporary position P1 and the blocking position P2. Move between.
  • the structure of the transport unit 41 may include a rotating shaft 41A and a pallet 41B, and the shielding disc 42 may be fixed to the upper surface of the pallet 41B, and the rotating shaft 41A is coupled to the pallet 41B.
  • the rotating shaft 41A can drive the pallet 41B to rotate a predetermined angle in a clockwise or counterclockwise manner to move the shielding disk 42 to the blocking position P2 or the temporary position P1.
  • the shielding disk 42 can be fixed to the transport unit 41 by means of a fixing member 43.
  • the securing assembly 43 can include screws, rivets, adhesive materials, or other suitable securing components for securing the masking disc 42 with the pallet 41B of the transport unit 41.
  • other detachable or non-removable means such as welding may be used to secure the masking disk 42 to the transport unit 41.
  • the shielding disk 42 when the shielding disk 42 is moved to the blocking position P2, the shielding disk 42 is located between the shielding unit 30 and the substrate W, and the substrate W on the carrying base 20 can be lowered to a loading and unloading position by means of the carrying base 20. P3, at this time, the target T can be cleaned, and at the same time, the chamber body 10 and/or the substrate W can be heated by the heat source 21.
  • the shielding unit 30 has an opening H, and the area of the shielding disk 42 (for example, the projected area in the first direction D1) is larger than the area of the opening H of the shielding unit 30, thereby ensuring shielding of the shielding disk 42. effect.
  • the shielding unit 30 may include a shielding ring 30A and an annular cover 30B for supporting the shielding ring 30A, and the inner surface 30W of the shielding ring 30A near one end of the bearing surface 20S defines an opening H, But it is not limited to this.
  • the shielding disk 42 When the shielding disk 42 is moved to the blocking position P2 (that is, when it is located between the bearing surface 20S and the shielding unit 30), the shielding disk 42 and the shielding unit 30 have a separation distance SP in the first direction D1 to ensure The shielding disk 42 can smoothly move in the second direction D2 and the target material sputtered by the target T cannot pass through the gap between the shielding unit 30 and the shielding disk 42. Sputtered onto the substrate W.
  • the separation distance SP may be between 2 mm and 4 mm, but is not limited thereto.
  • the outer diameter R1 of the shielding disk 42 is preferably larger than the inner diameter R2 of the shielding ring 30A to ensure that the material of the target T passes through the gap between the shielding ring 30A and the shielding disk 42 only It is sputtered toward the side wall of the chamber body 10 without being sputtered onto the substrate W.
  • the inner diameter R2 may be regarded as the diameter of the opening H, and the outer diameter R1 of the shielding disk 42 may preferably be 20 mm to 30 mm larger than the inner diameter R2 of the shadow ring 30A, but is not limited thereto.
  • the substrate W on the carrying base 20 can be raised to a process position P4 by means of the carrying base 20, and the shielding ring 30A can be removed from the annular cover 30B.
  • the support is pressed so that the shadow ring 30A presses the edge portion of the substrate W under the action of its own gravity to sputter the substrate W with the target T.
  • the shielding disk 42 When the shielding disk 42 is at the temporary position P1, a portion of the shielding disk 42 is moved into the space covered by the shielding disk magazine 50 through the port 51, and the remaining portion of the shielding disk 42 is also displaced toward the peripheral direction of the chamber body 10 until The substrate W and the rising path of the carrier base 20 are reached, thereby ensuring that the substrate W can be smoothly raised to the process position P4.
  • FIG. 8A and FIG. 8B are schematic diagrams showing a state in which a physical vapor deposition chamber performs a sputtering process according to some embodiments of the present invention.
  • the shielding disk 42 can be moved to be located between the bearing surface 20S and the target T by the transmission unit 41, and can also be said to transmit the shielding disk 42 to the blocking position P2 located above the substrate W; or, for example, As shown in FIG. 8B, the shielding disk 42 can be moved by a transmission unit 41 through a port 51 to a temporary position P1 formed by the shielding disk magazine 50.
  • the transmission unit 41 can move the shielding disk 42 to be located between the bearing surface 20S and the target T in a translational manner, and can also be said to block the shielding disk 42 in the second direction. D2 moves between the temporary position P1 and the occlusion position P2.
  • the transmission unit 41 may include a robot arm 41C for carrying the shielding disk 42.
  • the robot arm 41C is disposed in a space formed by the shielding disk magazine 50, and the robot arm 41C may protrude into the interior of the chamber body 10 through the port 51. Or from the chamber body 10 The portion is retracted into the space formed by the shield tray 50 to move the mask tray 42 to the blocking position P2 or the temporary position P1.
  • the robot arm 41C may be constituted by a plurality of connected cantilevers, and the plurality of cantilevers realize the horizontal telescopic movement in the second direction D2 by folding or unfolding, but not limited thereto.
  • Other robotic arms of other constructions or other structures that can be used to effect horizontal telescoping motion in the second direction D2 are also within the scope of the present invention.
  • FIG. 9 and FIG. 9 is a schematic view of a deposition apparatus according to some embodiments of the present invention
  • FIG. 10 is a schematic flow chart showing an operation of a deposition apparatus according to some embodiments of the present invention.
  • some embodiments of the present invention provide a deposition apparatus M2, which is different from the deposition apparatus M1 shown in FIG. 1 described above in that the deposition apparatus M2 further includes a fourth chamber 400, which is the third The chambers 300 are connected, and the fourth chamber 400 is configured to perform a cooling process to perform a cooling and cooling operation on the substrate that has completed the exhaust process and the sputtering process in the second chamber 200.
  • the operational flow of deposition apparatus M2 may include step S1, step S2, step S3, and step S4 as shown in FIG.
  • step S1 the substrate is loaded into the first chamber 100 of the deposition apparatus M1.
  • step S2 the substrate is directly transferred from the first chamber 100 through the third chamber 300 to the second chamber 200.
  • step S3 the substrate is subjected to an exhaust process and a sputtering process in the second chamber 200.
  • step S4 the substrate that completes the exhaust process and the sputtering process is carried out from the second chamber 200, and the substrate is transferred to the fourth chamber 400 via the third chamber 300 for a cooling process.
  • the substrate can be taken out from the fourth chamber 400 and sequentially passed through the third chamber 300, the first chamber 100, and then the self-deposition apparatus M2. Out.
  • the substrate can be subjected to an exhaust process and sputtering in the physical vapor deposition chamber.
  • the transfer chamber can be directly transferred from the loading/unloading chamber to the physical vapor deposition chamber by using the transfer chamber to perform an exhaust process and a sputtering process on the substrate, thereby eliminating the preheating of the exhaust chamber to achieve Reduce the size and cost of equipment.
  • the deposition process can be simplified by means of the deposition apparatus of the invention, and the substrate can be prevented from being in other heating chambers.
  • a heat source may be disposed in the chamber body to heat the chamber body to a high temperature environment to perform an exhaust process and a sputtering process on the substrate loaded into the chamber body.
  • the shielding disk is fixed on the transmission unit, and the transmission unit moves the shielding disk between the bearing surface of the bearing base and the target, so that the shielding disk can still be loaded on the bearing base when the shielding disk is in the blocking position.
  • the substrate located under the shielding disk during the cleaning of the target may also be subjected to a heating process at the same time, thereby generating an effect of exhausting and/or high-temperature activation on the substrate, and thus shortening the overall process time and thereby increasing the productivity.

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Abstract

一种沉积设备(M1)，包括第一腔室(100)、第二腔室(200)以及第三腔室(300)；第一腔室(100)经配置用以载入基板(W)；第二腔室(200)经配置用以提供高温环境，以使得基板(W)于第二腔室(200)内进行排气工艺以及溅射工艺；第三腔室(300)设置于第一腔室(100)以及第二腔室(200)之间；第三腔室(300)经配置用以将基板(W)由第一腔室(100)通过第三腔室(300)直接传输至第二腔室(200)。以及一种物理气相沉积腔室(200)，包括腔室本体(10)、靶材(T)、承载底座(20)以及热源(21)；承载底座(20)设置于腔室本体(10)内，用以承载基板(W)；热源(21)设置于腔室本体(10)内，热源(21)经配置用以将腔室本体(10)加热至高温环境，以对基板(W)进行排气工艺以及溅射工艺。

Description

沉积设备以及物理气相沉积腔室 技术领域
本发明涉及一种半导体工艺设备，尤指一种沉积设备以及物理气相沉积腔室。
背景技术
物理气相沉积(physical vapor deposition，PVD),例如溅射工艺已广泛用于现今的半导体集成电路、发光二极管(light emitting diode，LED)、太阳能电池及显示器等制作中。在PVD设备的工艺腔室中，通常是利用在将高功率直流电源连接至溅射靶材，通过直流电源将反应腔内的工作气体激发为等离子体(plasma)，并吸引等离子体中的离子轰击溅射靶材，藉此使靶材的材料被溅射下来而沉积在晶片或其它基板上。不同的应用领域通常对溅射功率、溅射速率等工艺参数的要求也有所不同，但基本上对于提升成膜质量以及增加设备产能的努力方向是非常明确的。
发明内容
为解决上述技术问题，本发明提供一种沉积设备以及物理气相沉积腔室，其中物理气相沉积腔室中设置有可将腔室加热至摄氏400度或以上的热源，由此，载入的基板可在物理气相沉积腔室的高温环境下进行预热、排气与溅射，进而达到减少设备体积与成本、缩短工艺时间以及提升产能等效果。
本发明的一些实施例提供一种沉积设备，包括第一腔室、第二腔室以及第三腔室。第一腔室经配置用以载入基板。第二腔室配置用以提供 高温环境，以使得基板于第二腔室内进行排气工艺以及溅射工艺。第三腔室设置于第一腔室以及第二腔室之间。第三腔室经配置用以将基板由第一腔室通过第三腔室直接传输至第二腔室。
本发明的一些实施例提供一种物理气相沉积腔室，包括腔室本体、靶材、承载底座以及热源。承载底座设置于腔室本体内，用以承载基板。热源设置于腔室本体内，热源经配置用以将腔室本体加热至高温环境，以对基板进行排气工艺以及溅射工艺。
本发明的沉积设备包括第一腔室、第二腔室与第三腔室，其中第三腔室与第一腔室和第二腔室连通并配置用以将基板由第一腔室直接传输至第二腔室。第二腔室经配置用以对基板进行排气工艺以及溅射工艺，故可省去额外的预热/排气腔室并进而达到减少设备体积与成本的效果。
在本发明的物理气相沉积腔室中，可利用腔室本体内设置的热源，将腔室本体加热至高温环境，以对载入腔室本体内的基板进行排气工艺以及溅射工艺，因此可不需设置额外的预热/排气腔室并进而达到减少设备体积与成本的效果。
附图说明
图1为本发明一些实施例的沉积设备的示意图；
图2为本发明一些实施例的沉积设备的操作流程示意图；
图3为本发明一些实施例的物理气相沉积腔室的示意图；
图4为本发明一些实施例的物理气相沉积腔室进行溅射流程的流程示意图；
图5为本发明一些实施例的物理气相沉积腔室的示意图；
图6A为本发明一些实施例的物理气相沉积腔室进行溅射流程的状况示意图；
图6B为本发明一些实施例的物理气相沉积腔室进行溅射流程的状况示意图；
图7为本发明一些实施例的遮蔽盘与传输单元之间的连接状况示意图；
图8A为本发明一些实施例的物理气相沉积腔室进行溅射流程的状况示意图；
图8B为本发明一些实施例的物理气相沉积腔室进行溅射流程的状况示意图；
图9为本发明一些实施例的沉积设备的示意图；以及
图10为本发明一些实施例的沉积设备的操作流程示意图。
【符号说明】
10   腔室本体
20   承载底座
20S  承载面
21   热源
21T  加热灯管
22   顶针
30   屏蔽单元
30A  遮蔽环
30B  环形罩
30W  内表面
41   传输单元
41A  旋转轴
41B  托板
41C  机械手臂
42              遮蔽盘
43              固定组件
50              遮蔽盘库
51              端口
100             第一腔室
300             第三腔室
400             第四腔室
200             第二腔室
201-203         物理气相沉积腔室
D1              第一方向
D2              第二方向
H               开口
M1、M2          沉积设备
P1              暂置位置
P2              遮挡位置
P3              装卸位置
P4              工艺位置
R1              外径
R2              内径
S1-S4、S11-S17  步骤
SP              间隔距离
SR              溅射流程
T               靶材
W               基板
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图对本发明提供的沉积设备以及物理气相沉积腔室进行说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。
在本发明的沉积设备中，第二腔室配置用以提供一高温环境，用以使基板可于第二腔室内进行排气工艺与溅射工艺，故可省去其它的预热和/或排气腔室并进而达到减少设备体积与成本的效果。
在本发明的物理气相沉积腔室中，可利用在腔室本体内设置的热源，用以将腔室本体加热至一高温环境，以对载入腔室本体内的基板进行排气工艺以及溅射工艺，因此可不需设置额外的预热/排气腔室并进而达到减少设备体积与成本的效果。
本说明书中所使用的"步骤"一词并不限于单一动作，此"步骤"一词可包括单一个动作、操作或手法，或者可为由多个动作、操作和/或手法所组成的集合。
请参考图1与图2。图1为本发明一些实施例的沉积设备的示意图，图2为本发明一些实施例的沉积设备的操作流程示意图。如图1所示，本发明的一些实施例提供一种沉积设备M1，包括第一腔室100、第二腔室200以及第三腔室300。第一腔室100经配置用以载入基板(图1与图2未绘示)，故第一腔室100可被视为载入/载出腔室，但并不以此为限。第二腔室200经配置用以提供高温环境，以使载入的基板在第二腔室200内进行排气工艺以及溅射工艺。第三腔室300设置于第一腔室100以及第二腔室200之间且与第一腔室100以及第二腔室200相连。第三腔室300经配置用以将基板由第一腔室100通过第三腔室300直接传输至第二腔室200。第三腔室300可被视为传输腔室，但并不以此为限。
如图1与图2所示，在一些实施例中，沉积设备M1的操作流程可 包括下列的步骤S1、步骤S2以及步骤S3。步骤S1中，将基板载入沉积设备M1的第一腔室100。步骤S2中，将基板由第一腔室100通过第三腔室300直接传输至第二腔室200(也就是物理气相沉积腔室)。步骤S3中，于第二腔室200内对基板进行排气(degas)工艺以及溅射(sputtering)工艺。在一些实施例中，沉积设备M1可另包括一热源(图1与图2未绘示)设置于第二腔室200内，其中热源经配置用以提供上述的高温环境，且第二腔室200的高温环境例如为摄氏400度以上，故可利用热源于溅射工艺进行之前和/或于溅射工艺进行时对基板和/或第二腔室200内的环境进行加热。当第二腔室200内的温度被热源加热至高于将要沉积在基板表面的材料层例如氮化铝薄膜的结晶温度时(例如物理气相沉积腔室内的温度可高于摄氏400度，或优选地可介于摄氏400度至摄氏800度之间，或更优选地可介于摄氏500度至摄氏700度之间)，同时可对基板和/或基板表面产生排气和/或高温活化的效果。因此，第二腔室200亦可被视为一排气及物理气相沉积腔室，但并不以此为限。此外，借助于第二腔室200中的热源持续进行加热可以达到可进行物理气相沉积工艺的温度条件，且此温度可高于物理气相沉积工艺所溅射形成的薄膜的结晶温度，藉以对物理气相沉积工艺的成膜质量有正面的帮助。再者，上述在物理气相沉积腔室内的高温状况对靶材与腔室状况亦有正面影响。举例来说，上述的高温状况可使靶材的结晶颗粒变大而降低微粒(particle)相关的缺陷产生，此外在物理气相沉积腔室处于高温状态下其遮蔽单元(图未示)的组件上的薄膜亦较不易发生破裂(crack)，而此亦有助于改善微粒相关的缺陷问题。精确而言，因此本实施例的物理气相沉积腔室在进行了一批次溅射之后可进行涂布处理，而由于腔室是处于高于摄氏400度的环境下，因此仅需使用低功率进行并可缩短涂布处理的时间，且可以减少进行涂布(pasting)处理的次数与频率，故可以缩短整体工艺时间并对于靶材的使用寿命亦有正面的帮 助。反之，在公知的物理气相沉积腔室内，由于腔室内是处于低于摄氏350度，因此靶材的结晶颗粒较小而会增加微粒相关的缺陷产生的机率，且在此状况下，覆盖环与上端盖等部件上的薄膜亦容易发生破裂而导致微粒缺陷增加。因此，公知的物理气相沉积腔室的涂布处理需使用高功率并持续数十分钟，且其进行涂布处理的次数与频率较高，不仅增加了整体工艺时间，更会造成靶材的使用寿命减短。
由于在第二腔室200内可进行排气工艺以及溅射工艺，故可藉此省去排气腔室和/或其它加热腔室的设置，进而可达到减少设备体积与成本的效果。此外，本发明的沉积设备及物理气相沉积腔室的设计亦可简化制作流程，并可避免基板在加热腔室加热之后在传递至溅射腔室的过程中产生微粒落在基板上而造成相关缺陷。此外，上述高温环境优选地可高于摄氏400度，藉以有效地使基板达到排气和/或高温活化的效果，而当物理气相沉积工艺为高温物理气相沉积工艺时，可借助于第二腔室200中的热源持续进行加热而实现高温物理气相沉积工艺。
换句话说，基板在载入沉积设备M1之后以及在第二腔室200进行排气工艺及溅射工艺之前可以无需通过其它加热腔室进行预热和/或排气。在一些实施例中，除了第二腔室200之外，第三腔室300可以不与任何加热腔室连接。在一些实施例中，沉积设备M1除了第二腔室200(也就是物理气相沉积腔室)之外未包括其它加热腔室。
请参考图3与图4。图3为本发明一些实施例的物理气相沉积腔室的示意图，图4为本发明一些实施例的物理气相沉积腔室进行溅射流程的流程示意图。如图3所示，在一些实施例中，物理气相沉积腔室(也就是第二腔室200)包括一腔室本体10、一靶材T、一承载底座20以及一热源21。承载底座20以与靶材T保持一间距的方式设置于腔室本体10内，且承载底座20具有一相对靶材T的承载面20S，用以承载基板W。热源21设置于腔室本体10内，热源21经配置用以将腔室本体 10加热至摄氏400度以上(优选地可介于摄氏400度至摄氏800度之间，且更优选地可介于摄氏500度至摄氏700度之间)，以对基板W进行排气工艺以及溅射工艺。在一些实施例中，热源21可包括一辐射式热源，且此辐射式热源可包括多个加热灯管21T，而基板W可设置于热源21与靶材T之间，但本发明并不以此为限。
在一些实施例中，物理气相沉积腔室(也就是第二腔室200)可包括一传输单元41以及一遮蔽盘42。传输单元41的至少一部分设置于腔室本体10内，遮蔽盘42固定于传输单元41上，且传输单元41经配置可将遮蔽盘42移动至位于承载面20S与靶材T之间，且遮蔽盘42亦位于承载底座20与靶材T之间。传输单元41可借助于例如旋转方式、平移方式或其它适合的方式将遮蔽盘42移动至位于承载面20S与靶材T之间，而由于遮蔽盘42是固定于传输单元41上，故遮蔽盘42不需被放置于承载底座20上。因此，当遮蔽盘42位于承载面20S与靶材T之间时，在承载底座20上仍可承载欲进行溅射的基板W，故借助于第二腔室200(也就是物理气相沉积腔室)的设计，可在物理气相沉积腔室已载入基板W的状况下对靶材T进行表面修饰工艺，进而达到缩短工艺时间以及提升产能的效果。在一些实施例中，可先将一个或多个基板W放置于一托盘(图未示)上，再将放置有基板W的托盘经由上述的第一腔室100以及第三腔室300载入物理气相沉积腔室的腔室本体10内并放置于承载底座20上。在另外一些实施例中，亦可不通过托盘而直接将基板W放置于承载底座20上。在一些实施例中，基板W可包括蓝宝石基板、碳化硅(SiC)基板或其它适合的材质所形成的单一材料基板或复合层材料基板，例如硅基板、绝缘层覆硅(SOI)基板、玻璃基板或陶瓷基板，而遮蔽盘42可由诸如碳化硅(SiC)或钼等耐高温材料制成，但并不以此为限。此外，腔室本体10以及腔室本体10内的部件优选地是由金属钼、低碳不锈钢、石英或其它可耐高温的金属 或非金属材料制成，藉此可于腔室本体10内形成上述的高温环境或执行其它高温工艺而不会产生质变或形变。
如图3与图4所示，在一些实施例中，在物理气相沉积腔室(也就是第二腔室200)内进行的溅射流程SR可包括下列的步骤S11、步骤S12、步骤S13、步骤S14、步骤S15、步骤S16以及步骤S17。步骤S11中，将基板W载入物理气相沉积腔室内。步骤S12中，对物理气相沉积腔室进行排气工艺。排气工艺可利用热源21将腔室本体10加热至高温环境而实现，而此高温环境可对基板W产生排气和/或活化的效果，故此高温环境优选地可高于将要沉积在基板表面的材料层例如氮化铝薄膜的结晶温度(例如物理气相沉积腔室内的温度可高于摄氏400度，或优选地可介于摄氏400度至摄氏800度之间，但并不以此为限)。然后，步骤S13中，利用传输单元41将遮蔽盘42移动至承载面20S与靶材T之间。步骤S14中，对靶材进行表面修饰工艺。步骤S15中，利用传输单元41将遮蔽盘42移开。步骤S16中，利用腔室本体10内的靶材T对基板W进行溅射，以于基板W上形成薄膜。步骤S17中，将形成有薄膜的基板W载出物理气相沉积腔室。虽然对靶材T进行表面修饰工艺时基板W已载入腔室本体10内，但由于遮蔽盘42位于承载面20S与靶材T之间，可避免靶材T的材料形成到基板W上。换句话说，借助于上述的溅射流程SR可不须在对靶材T进行表面修饰工艺之后再开启腔室本体10以载入基板W，故对于稳定基板W进行溅射时的工艺状况有正面帮助，此外亦可节省因载入基板W而需费时再稳定腔室本体10的操作，进而缩短溅射流程SR的整体时间并达到提升产能的效果。
在一些实施例中，热源21于腔室本体10内形成高温环境的动作可被视为一加热工艺，而至少部分的加热工艺可与靶材W的表面修饰工艺同时进行，由此达到缩短整体工艺时间的效果。此外，当物理气相沉 积工艺为高温物理气相沉积工艺时，可借助于第二腔室200中的热源21持续进行加热而实现高温物理气相沉积工艺。热源21可设置于腔室本体10内，热源21可对第二腔室200加热至摄氏400度或以上，故热源21经配置可用以控制腔室本体10内的温度。举例来说，在进行上述的加热工艺和/或物理气相沉积工艺时，可利用热源21对腔室本体10和/或基板W进行加热，用以达到除气的效果和/或物理气相沉积工艺时所需的工艺温度。
上述的物理气相沉积腔室进行的溅射流程SR仅为示例，而本发明并不以上述的溅射流程SR的内容为限，其它需要的额外步骤亦可于溅射流程SR之前、之后和/或其中进行，而溅射流程SR中所述的步骤亦可于其它实施例中被取代、删除或改变其顺序。
在一些实施例中，上述的沉积装置以及物理气相沉积腔室可用以形成非金属薄膜、金属薄膜或金属化合物薄膜例如氮化铝(AlN)薄膜，但并不以此为限。换句话说，第二腔室200可以是氮化铝物理气相沉积腔室，经配置用以于基板W上形成一氮化铝薄膜。
下文将针对本发明的不同实施例进行说明，且为简化说明，以下说明主要针对各实施例不同之处进行详述，而不再对相同之处作重复赘述。此外，本发明的各实施例中相同的组件是以相同的标号进行标示，以利于各实施例间互相对照。
请参考图5。图5为本发明一些实施例的物理气相沉积腔室的示意图。如图5所示，在一些实施例中，物理气相沉积腔室201还可包括设置于腔室本体10内的一屏蔽单元30，屏蔽单元30设置于靶材T与承载底座20之间，当遮蔽盘42移动至位于承载面20S与靶材T之间时，遮蔽盘42亦位于承载底座20与屏蔽单元30之间。承载底座20可与屏蔽单元30在第一方向D1上对应设置，第一方向D1可被视为一垂直方向，但并不以此为限。屏蔽单元30在第一方向D1上设置于承载底座 20以及靶材T之间。遮蔽盘42固定于传输单元41上，且传输单元41经配置可沿第二方向D2将遮蔽盘42在一暂置位置P1与一遮挡位置P2之间移动，而在遮挡位置P2时遮蔽盘42位于承载面20S与靶材T之间，且遮蔽盘42亦位于承载面20S与屏蔽单元30之间。第二方向D2可被视为一水平方向，但并不以此为限。传输单元41可借助于例如旋转方式、平移方式或其它适合的方式将遮蔽盘42移动至位于承载面20S与靶材T之间，也可说是将遮蔽盘42沿第二方向D2在暂置位置P1与遮挡位置P2之间移动，但并不以此为限。此外，由于遮蔽盘42是固定于传输单元41上，故遮蔽盘42不需被放置于承载底座20上。此外，物理气相沉积腔室201可还包括设置于承载底座20上的多个顶针22，且顶针22是经配置用以将基板W自承载底座20的表面顶起。在一些实施例中，顶针22可包括测温式顶针，用以检测腔室本体10内和/或基板W的温度，但并不以此为限。
在一些实施例中，遮蔽盘42可具有一黏着面，至少部分的黏着面是面对靶材T，且此黏着面可包括一粗糙面或经由适当的表面处理例如喷砂、熔射或表面粗化等方式所形成的黏着面，用以增加遮蔽盘42与靶材T的材料的结合能力，进而使遮蔽盘42的上表面能够吸附更多由靶材T所掉落的材料，达到加强遮蔽盘42的遮挡作用的效果。
请参考图6A、图6B与图7。图6A与图6B为本发明一些实施例的物理气相沉积腔室进行溅射流程的状况示意图，图7为本发明一些实施例的遮蔽盘与传输单元之间的连接状况示意图。如图6A所示，可利用传输单元41将遮蔽盘42移动至位于承载面20S与靶材T之间，也可说是将遮蔽盘42传输至位于基板W上方的遮挡位置P2；或者，如图6B所示，可利用传输单元41将遮蔽盘42通过一端口51移动到位于一遮蔽盘库50所形成的暂置位置P1。在一些实施例中，遮蔽盘库50与腔室本体10之间可进行密封处理，考虑到遮蔽盘库50与腔室本体 10之间的真空完整性，遮蔽盘库50也可以与腔室本体10采用焊接的方式连接或者以一体成型的方式形成。传输单元41可以旋转方式或其它适合的方式将遮蔽盘42移动至位于承载面20S与靶材T之间，也可说是将遮蔽盘42沿第二方向D2在暂置位置P1与遮挡位置P2之间移动。举例来说，传输单元41的结构可包括旋转轴41A和托板41B，遮蔽盘42可固定在托板41B的上表面上，而旋转轴41A与和托板41B连接。利用一驱动源提供旋转动力，可使旋转轴41A带动托板41B以顺时针或逆时针方式旋转一预设角度，以将遮蔽盘42移动到遮挡位置P2或者暂置位置P1。此外，如图7所示，遮蔽盘42可借助于一固定组件43而固定于传输单元41上。固定组件43可包括螺钉、铆钉、黏着材料或其它适合的固定组件，用以使遮蔽盘42可与传输单元41的托板41B固定在一起。在本发明的其它实施例中，亦可使用其它可拆卸方式或非可拆卸方式例如焊接方式来使得遮蔽盘42固定于传输单元41上。
如图6A所示，当遮蔽盘42移动到遮挡位置P2时，遮蔽盘42位于屏蔽单元30与基板W之间，而位于承载底座20上的基板W可借助于承载底座20下降至一装卸位置P3，此时可对靶材T进行清洗，且同时亦可利用热源21对腔室本体10和/或基板W进行加热。在一些实施例中，屏蔽单元30具有一开口H，且遮蔽盘42的面积(例如于第一方向D1上的投影面积)是大于屏蔽单元30的开口H的面积，藉以确保遮蔽盘42的遮蔽效果。举例来说，在一些实施例中，屏蔽单元30可包括一遮蔽环30A以及一环形罩30B用于支撑遮蔽环30A，而遮蔽环30A靠近承载面20S的一端的内表面30W限定出开口H，但并不以此为限。当遮蔽盘42移动至遮挡位置P2时(也就是位于承载面20S与屏蔽单元30之间时)，遮蔽盘42与屏蔽单元30之间于第一方向D1上具有一间隔距离SP，用以确保遮蔽盘42可于第二方向D2上顺利移动且使得靶材T溅射出的靶材材料无法通过屏蔽单元30与遮蔽盘42之间的间隙而 溅射至基板W上。举例来说，间隔距离SP可介于2毫米至4毫米之间，但并不以此为限。在一些实施例中，遮蔽盘42的外径R1优选地是大于遮蔽环30A的内径R2，用以确保靶材T的材料即使穿过了遮蔽环30A与遮蔽盘42之间的间隙，也只会朝腔室本体10的侧壁方向溅射，而不会溅射至基板W上。此外，上述内径R2可被视为开口H的直径，而遮蔽盘42的外径R1优选地可比遮蔽环30A的内径R2大20毫米至30毫米，但并不以此为限。
如图6B所示，当遮蔽盘42移动至暂置位置P1时，位于承载底座20上的基板W可借助于承载底座20上升至一工艺位置P4，此时遮蔽环30A可自环形罩30B被托起，以使遮蔽环30A在自身重力的作用下压住基板W的边缘部分以利用靶材T对基板W进行溅射。当遮蔽盘42位于暂置位置P1时，遮蔽盘42的一部分通过端口51移入遮蔽盘库50所罩的空间内，而遮蔽盘42的其余部分也朝腔室本体10的周边方向偏移，直至到达基板W以及承载底座20的上升路径之外，藉此确保基板W能够顺利上升至工艺位置P4。
请参考图8A与图8B。图8A与图8B为本发明一些实施例的物理气相沉积腔室进行溅射流程的状况示意图。如图8A所示，可利用传输单元41将遮蔽盘42移动至位于承载面20S与靶材T之间，也可说是将遮蔽盘42传输至位于基板W上方的遮挡位置P2；或者，如图8B所示，可利用传输单元41将遮蔽盘42通过一端口51移动到位于遮蔽盘库50所形成的暂置位置P1。如图8A与图8B所示，在一些实施例中，传输单元41可以平移方式将遮蔽盘42移动至位于承载面20S与靶材T之间，也可说是将遮蔽盘42沿第二方向D2在暂置位置P1与遮挡位置P2之间移动。举例来说，传输单元41可包括用于承载遮蔽盘42的机械手臂41C，机械手臂41C设置在遮蔽盘库50所形成的空间内，机械手臂41C可通过端口51伸入腔室本体10内部，或者自腔室本体10内 部缩回到遮蔽盘库50所形成的空间内，以将遮蔽盘42移动至遮挡位置P2或暂置位置P1。举例来说，机械手臂41C可由多个相连接的悬臂所构成，多个悬臂通过折叠或展开来实现在第二方向D2上的水平伸缩动作，但并不以此为限。其它结构的其它机械手臂或其它可用来实现在第二方向D2上进行水平伸缩动作的结构亦在本发明的范围之内。
请参考图9与图10。图9为本发明一些实施例的沉积设备的示意图，图10为本发明一些实施例的沉积设备的操作流程示意图。如图9所示，本发明的一些实施例提供一沉积设备M2，与上述的图1所示的沉积设备M1不同的地方在于，沉积设备M2还包括一第四腔室400，其与第三腔室300相连，第四腔室400经配置用以执行冷却工艺，可对已于第二腔室200中完成排气工艺以及溅射工艺的基板进行降温冷却的动作。举例来说，在一些实施例中，沉积设备M2的操作流程可包括如图10所示的步骤S1、步骤S2、步骤S3与步骤S4。步骤S1中，将基板载入沉积设备M1的第一腔室100。步骤S2中，将基板由第一腔室100通过第三腔室300直接传输至第二腔室200。步骤S3中，于第二腔室200内对基板进行排气工艺及溅射工艺。步骤S4中，将完成排气工艺及溅射工艺的基板自第二腔室200载出，并经由第三腔室300将基板传输至第四腔室400进行冷却工艺。此外，借助于第四腔室400将基板的温度下降到一预定温度后可将基板自第四腔室400取出并依序经过第三腔室300、第一腔室100后自沉积设备M2载出。
综上所述，在本发明的沉积设备中，由于物理气相沉积腔室经配置用以将腔室本体加热至一高温环境，故可于物理气相沉积腔室内对基板进行排气工艺以及溅射工艺。此外，可利用传输腔室将基板由载入/载出腔室直接传输至物理气相沉积腔室，以对基板进行排气工艺及溅射工艺，藉此省去预热排气腔室而达到减少设备体积与成本的效果。此外，借助于本发明的沉积设备亦可简化制作流程，可避免基板在其它加热腔 室加热之后在传递至物理气相沉积腔室的过程中产生微粒落在基板上的问题。在本发明的物理气相沉积腔室中，可在腔室本体内设置热源，用以将腔室本体加热至一高温环境，以对载入腔室本体内的基板进行排气工艺以及溅射工艺。此外，遮蔽盘是固定于传输单元上，而传输单元将遮蔽盘移动至位于承载底座的承载面与靶材之间，故遮蔽盘位于遮挡位置时在承载底座上仍可承载欲被进行溅射的基板，藉此可在已载入基板的状况下进行清洗靶材的动作，进而达到缩短工艺时间以及提升产能的效果。此外，在靶材进行清洗时位于遮蔽盘下方的基板亦可同时进行加热工艺，藉以对基板产生排气和/或高温活化的效果，并可因此缩短整体的工艺时间并进而达到产能的提升。
前述内容概述一些实施方式的特征，因而本领域技术人员可更加理解本申请案揭示内容的各方面。本领域技术人员应理解可轻易使用本申请案揭示内容作为基础，用于设计或修饰其它工艺与结构而实现与本申请案所述的实施方式具有相同目的与/或达到相同优点。本领域技术人员亦应理解此均等架构并不脱离本申请案揭示内容的精神与范围，以及本领域技术人员可进行各种变化、取代与替换，而不脱离本申请案揭示内容的精神与范围。

Claims (32)

  1. 一种沉积设备，包括：
    第一腔室，经配置用以载入基板；
    第二腔室，配置用以提供高温环境，以使得所述基板在所述第二腔室内进行排气工艺以及溅射工艺；以及
    第三腔室，设置于所述第一腔室以及所述第二腔室之间，
    其特征在于，所述第三腔室经配置用以将所述基板由所述第一腔室通过所述第三腔室直接传输至所述第二腔室。
  2. 如权利要求1所述的沉积设备，其特征在于，所述第二腔室的所述高温环境为摄氏400度或以上。
  3. 如权利要求1所述的沉积设备，其特征在于，还包括与所述第三腔室相连的第四腔室，所述第四腔室经配置用以执行冷却工艺。
  4. 如权利要求1所述的沉积设备，其特征在于，所述第二腔室包括：
    腔室本体；
    靶材；
    承载底座，以与所述靶材保持一定间距的方式设置于所述第二腔室内，用以承载所述基板；
    热源，设置于所述腔室本体内，所述热源经配置用以提供所述高温环境；
    传输单元；以及
    遮蔽盘，固定于所述传输单元上，所述传输单元经配置用以将所述遮蔽盘移动至位于所述承载底座与所述靶材之间。
  5. 如权利要求4所述的沉积设备，其特征在于，所述传输单元以 旋转方式将所述遮蔽盘移动至位于所述承载底座与所述靶材之间。
  6. 如权利要求4所述的沉积设备，其特征在于，所述传输单元以平移方式将所述遮蔽盘移动至位于所述承载底座与所述靶材之间。
  7. 如权利要求4所述的沉积设备，其特征在于，所述第二腔室还包括设置于所述腔室本体内的屏蔽单元，所述遮蔽盘移动至位于所述承载底座与所述靶材之间时，所述遮蔽盘位于所述承载底座与所述屏蔽单元之间。
  8. 如权利要求7所述的沉积设备，其特征在于，所述遮蔽盘位于所述承载底座与所述屏蔽单元之间时，所述遮蔽盘与所述屏蔽单元之间具有间隔距离。
  9. 如权利要求8所述的沉积设备，其特征在于，所述间隔距离介于2毫米至4毫米之间。
  10. 如权利要求7所述的沉积设备，其特征在于，所述屏蔽单元具有一开口，且所述遮蔽盘的面积大于所述屏蔽单元的所述开口的面积。
  11. 如权利要求10所述的沉积设备，其特征在于，所述屏蔽单元包括一遮蔽环，所述遮蔽环靠近所述承载底座的一端的内表面限定出所述开口。
  12. 如权利要求11所述的沉积设备，其特征在于，所述遮蔽盘的外径比所述遮蔽环的内径大20毫米至30毫米。
  13. 如权利要求4所述的沉积设备，其特征在于，所述遮蔽盘借助于固定组件固定于所述传输单元上。
  14. 如权利要求1所述的沉积设备，其特征在于，所述沉积设备是为氮化铝薄膜溅射设备。
  15. 一种物理气相沉积腔室，其特征在于，包括：
    腔室本体；
    靶材；
    承载底座，设置于所述腔室本体内，用以承载基板；以及
    热源，设置于所述腔室本体内，所述热源经配置用以将所述腔室本体加热至高温环境，以对所述基板进行排气工艺以及溅射工艺。
  16. 如权利要求15所述的物理气相沉积腔室，其特征在于，所述高温环境为摄氏400度或以上。
  17. 如权利要求15所述的物理气相沉积腔室，包括：
    传输单元；以及
    遮蔽盘，固定于所述传输单元上；
    其特征在于，所述传输单元经配置用以将所述遮蔽盘移动至位于所述承载底座与所述靶材之间。
  18. 如权利要求17所述的物理气相沉积腔室，其特征在于，所述传输单元以旋转方式将所述遮蔽盘移动至位于所述承载底座与所述靶材之间。
  19. 如权利要求17所述的物理气相沉积腔室，其特征在于，所述 传输单元以平移方式将所述遮蔽盘移动至位于所述承载底座与所述靶材之间。
  20. 如权利要求17所述的物理气相沉积腔室，其特征在于，还包括设置于所述腔室本体内的屏蔽单元，所述遮蔽盘移动至位于所述承载底座与所述靶材之间时，所述遮蔽盘位于所述承载底座与所述屏蔽单元之间。
  21. 如权利要求20所述的物理气相沉积腔室，其特征在于，所述遮蔽盘移动至位于所述承载底座与所述屏蔽单元之间时，所述遮蔽盘与所述屏蔽单元之间具有间隔距离。
  22. 如权利要求21所述的物理气相沉积腔室，其特征在于，所述间隔距离介于2毫米至4毫米之间。
  23. 如权利要求20所述的物理气相沉积腔室，其特征在于，所述屏蔽单元具有开口，且所述遮蔽盘的面积大于所述屏蔽单元的所述开口的面积。
  24. 如权利要求23所述的物理气相沉积腔室，其特征在于，所述屏蔽单元包括一遮蔽环，所述遮蔽环靠近所述承载底座的一端的内表面限定出所述开口。
  25. 如权利要求24所述的物理气相沉积腔室，其特征在于，所述遮蔽盘的外径比所述遮蔽环的内径大20毫米至30毫米。
  26. 如权利要求17所述的物理气相沉积腔室，其特征在于，所述 遮蔽盘具有一黏着面。
  27. 如权利要求26所述的物理气相沉积腔室，其特征在于，所述黏着面包括一粗糙面。
  28. 如权利要求17所述的物理气相沉积腔室，其特征在于，所述遮蔽盘借助于固定组件固定于所述传输单元上。
  29. 如权利要求15所述的物理气相沉积腔室，其特征在于，所述热源包括辐射式热源。
  30. 如权利要求29所述的物理气相沉积腔室，其特征在于，所述辐射式热源包括多个加热灯管。
  31. 如权利要求15所述的物理气相沉积腔室，其特征在于，所述承载底座承载所述基板时，所述基板位于所述热源与所述靶材之间。
  32. 如权利要求15所述的物理气相沉积腔室，其特征在于，所述物理气相沉积腔室为氮化铝物理气相沉积腔室，经配置用以在所述基板上形成氮化铝薄膜。
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