WO2017193995A1 - 掩膜集成框架及蒸镀设备 - Google Patents

掩膜集成框架及蒸镀设备 Download PDF

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Publication number
WO2017193995A1
WO2017193995A1 PCT/CN2017/084112 CN2017084112W WO2017193995A1 WO 2017193995 A1 WO2017193995 A1 WO 2017193995A1 CN 2017084112 W CN2017084112 W CN 2017084112W WO 2017193995 A1 WO2017193995 A1 WO 2017193995A1
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WO
WIPO (PCT)
Prior art keywords
mask
alignment
frame
hole
alignment hole
Prior art date
Application number
PCT/CN2017/084112
Other languages
English (en)
French (fr)
Inventor
嵇凤丽
白珊珊
梁逸南
Original Assignee
京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 鄂尔多斯市源盛光电有限责任公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/737,220 priority Critical patent/US10627714B2/en
Publication of WO2017193995A1 publication Critical patent/WO2017193995A1/zh
Priority to US16/815,865 priority patent/US10996555B2/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/16—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling the spray area
    • B05B12/20—Masking elements, i.e. elements defining uncoated areas on an object to be coated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C17/00—Hand tools or apparatus using hand held tools, for applying liquids or other fluent materials to, for spreading applied liquids or other fluent materials on, or for partially removing applied liquids or other fluent materials from, surfaces
    • B05C17/06—Stencils
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C17/00—Hand tools or apparatus using hand held tools, for applying liquids or other fluent materials to, for spreading applied liquids or other fluent materials on, or for partially removing applied liquids or other fluent materials from, surfaces
    • B05C17/06—Stencils
    • B05C17/08—Stencil holders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
    • B05C21/005—Masking devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present disclosure relates to the field of display, and in particular to a mask integrated frame and an evaporation apparatus.
  • the OLED (Organic Light Emitting Diode) display panel has many advantages such as self-luminous, fast response, high brightness, light weight, etc., and has gradually become the mainstream in the display field.
  • the OLED display panel includes a plurality of sub-pixel units arranged in an array.
  • Each of the sub-pixel units includes an anode, a light emitting layer, and a cathode.
  • the luminescent layer is formed by using an organic electroluminescent material, and is currently mainly used in a mask plate and fabricated in each sub-pixel unit by an evaporation process.
  • the mask When performing the evaporation process, the mask must be soldered to the frame and placed inside the evaporation apparatus.
  • Masks and frames that are fixed together by welding or the like are called MFA (Mask Frame Assemble).
  • MFA Mosk Frame Assemble
  • the present disclosure is directed to alleviating or eliminating one or more of the problems previously described.
  • Embodiments of the present disclosure provide a mask integration frame including a frame and a mask plate fixed to the frame, wherein the mask integration frame is provided with an alignment mark, and the alignment mark includes a placement mark a first alignment hole on the frame and a second alignment hole disposed on the mask, and wherein the first alignment hole is a through hole; or the first alignment hole It is a blind hole, and the deepest position of the bottom of the blind hole does not overlap with the orthographic projection of the second alignment hole on the frame.
  • the first alignment aperture includes a first segment and the inner wall of the first portion is non-perpendicular to the plane of the mask.
  • the first portion when the first alignment hole is a blind hole, the first portion has a conical shape, and And the axis of the first portion is perpendicular to the plane of the mask.
  • an orthographic projection of the second alignment aperture on the frame is located on an inner wall of the first portion.
  • the first portion has a taper angle of about 60 degrees to 150 degrees, and the first portion has a height of about 1.5 mm to 2.0 mm.
  • the first alignment aperture further includes a second portion in the shape of a cylinder, and the axis of the second portion is perpendicular to the plane of the mask.
  • the height of the second portion is between about 0.8 mm and 1.2 mm.
  • the first alignment hole when the first alignment hole is a through hole, the first alignment hole further includes a third portion extending from the first portion in a vertical direction to a bottom of the frame.
  • the opening of the third portion in the first portion is not higher than the projected area of the second alignment hole on the inner wall of the first alignment hole.
  • the third portion extends from the deepest position of the bottom of the first alignment aperture to the bottom of the frame.
  • the first portion is in a cylindrical shape, and an axis of the first portion is not perpendicular to a plane of the mask.
  • the angle between the axis of the first portion and the plane of the mask is about 30 to 60 degrees.
  • the first alignment hole further includes a third portion at least one end of the first portion, the third portion is in a cylindrical shape, and an axis of the third portion and a plane of the mask plate vertical.
  • the second alignment hole is a through hole.
  • the frame and the mask are formed of a metal material, and the mask is welded to the frame.
  • the mask integration frame includes four or more of the alignment marks.
  • the present disclosure also provides an evaporation apparatus including the above-described mask integration frame.
  • FIG. 1 is a schematic view of a mask integrated frame of an embodiment of the present disclosure
  • FIG. 2 is a schematic diagram of an alignment mark on a mask integrated frame of an embodiment of the present disclosure
  • 3A is a schematic diagram of an alignment mark on a mask integrated frame of an embodiment of the present disclosure
  • Figure 3B is a top plan view of the alignment mark of Figure 3A;
  • FIG. 4 is a schematic diagram of an alignment mark on a mask integrated frame of an embodiment of the present disclosure
  • FIG. 5 is a schematic diagram of an alignment mark on a mask integrated frame of an embodiment of the present disclosure.
  • Embodiments of the present disclosure provide a mask integration frame including a frame and a mask plate fixed to the frame, wherein the mask integration frame is provided with an alignment mark, and the alignment mark includes a placement mark a first alignment hole on the frame and a second alignment hole disposed on the mask, and wherein the first alignment hole is a through hole; or the first alignment hole is a blind hole, The deepest position of the bottom of the blind hole does not overlap with the orthographic projection of the second alignment hole on the frame.
  • orthoprojection on a frame refers to a projection in a direction perpendicular to the surface of the frame.
  • the four corners of the MFA are provided with alignment marks for alignment.
  • the design is to make tapered holes at the four corners of the frame, and to make alignment holes at corresponding positions on the alignment mask.
  • the center of the alignment hole on the alignment mask coincides with the center of the tapered hole on the frame below it.
  • the image is collected by the CCD image sensor, and the edge of the alignment hole on the alignment mask is recognized by the difference of the gray scale, thereby achieving alignment with the TFT substrate.
  • the liquid drug or water
  • the liquid When the liquid remains, the liquid is at the deepest position of the conical hole under the action of gravity, and a spot is formed here after evaporation.
  • the stain spot coincides with the center of the alignment hole, the edge of the alignment hole on the alignment mask cannot be recognized in the image captured by the image sensor. This causes the alignment mask to fail to grab and cause the vapor deposition device to generate an alarm.
  • the mask integration framework provided by the embodiments of the present disclosure effectively alleviates or completely solves the problem of interference with the alignment due to residual liquid in the alignment holes on the frame.
  • the first alignment hole includes a first portion, and an inner wall of the first portion is non-perpendicular to a plane of the mask.
  • An orthographic projection of the second alignment aperture on the frame is located on an inner wall of the first portion.
  • FIG. 1 is a schematic diagram of a mask integrated frame according to an embodiment of the present disclosure.
  • the mask integrated frame includes a frame 100 and masks 210, 220 disposed on the frame 100.
  • the mask plates 210, 220 include a mask 210 (ie, an alignment mask) provided with alignment holes and a plurality of mask plates 220 not provided with alignment holes.
  • the mask integration frame is provided with an alignment mark 1.
  • the registration mark 1 includes a first alignment hole 101 provided on the frame 100 and a second alignment hole 211 provided on the mask 210.
  • the second alignment hole 211 on the mask 210 is a through hole.
  • the first alignment hole 101 includes a first portion having a truncated cone shape (a portion between the broken line AA' and the broken line BB'), and a second portion in the form of a cylinder on the side of the first portion (dashed line AA' The upper part) and the cylindrical third part (the part below the broken line BB') on the other side of the first part.
  • the first alignment hole 101 is a through hole penetrating the frame 100.
  • the third portion extends from the deepest position at the bottom of the first alignment hole 101 to the bottom of the frame 100.
  • the liquid on the frame 100 is discharged through the third portion to prevent liquid from remaining in the first alignment hole 101.
  • the stain directly formed by the residual liquid does not appear at a position directly below the second alignment hole 211, so that the second alignment hole 211 is effectively recognized during the alignment process.
  • the second alignment hole 211 is disposed at a central position of the mask 210, and the orthographic projection of the third portion of the first alignment hole 101 and the second alignment hole 211 on the frame 100 overlaps.
  • the present disclosure is not limited thereto, and in principle, the opening of the third portion may be disposed at any position in the first alignment hole.
  • the first alignment hole 101 is a through hole
  • the air knife blowing process after the mask 210 is cleaned the liquid is more easily discharged from the frame 100 through the through hole, thereby reducing or avoiding A stain spot is formed in the first alignment hole 101. Therefore, by designing the first alignment hole 101 as a through hole form, it is expected that the possibility of forming a stain spot in the first alignment hole can be reduced.
  • FIG. 3A is a schematic cross-sectional view of an alignment mark on a mask integrated frame of an embodiment of the present disclosure.
  • the first alignment aperture on the frame 100 is a blind aperture.
  • the orthographic projection of the second alignment hole 211 on the frame 100 is located on the inner wall of the first alignment hole 101.
  • the deepest position at the bottom of the first alignment hole 101 is outside the orthographic projection of the second alignment hole 211 on the frame 100. That is, the deepest position at the bottom of the first alignment hole 101 is not located within the orthographic projection of the second alignment hole 211 on the frame 100.
  • a top view thereof is shown in Fig. 3B.
  • the residual liquid is usually located at the deepest position of the first alignment hole due to gravity (i.e., in the dotted line region in Fig. 3B).
  • the vapor deposition apparatus can still utilize the gray scale of the first alignment hole 101 on the frame 100 to be different from the gray scale of the mask 210, thereby effectively identifying the alignment mark 1 and avoiding the interference of the residual liquid on the alignment. .
  • the thickness c of the frame 100 is, for example, about 20 mm to 30 mm.
  • the thickness c is 15 mm or the like.
  • the shape of the opening of the first alignment hole 101 is a circle or a regular polygon (such as a regular octagon).
  • the diameter d of the opening is, for example, about 5 mm to 7 mm.
  • the opening diameter d is 6 mm.
  • the first alignment hole 101 on the frame 100 includes a first portion in the shape of a cone (a portion below the broken line BB') and a second portion in the shape of a cylinder (above the broken line BB'). section).
  • the orthographic projection of the second alignment aperture 211 on the frame 100 is located on the inner wall of the first portion.
  • a second portion is formed on the mask sheet, and then the first portion is formed.
  • the axis of the first portion of the first alignment hole 101 is perpendicular to the plane of the mask plate 210.
  • the taper angle ⁇ of the first portion is, for example, about 60 to 150 degrees.
  • the taper angle ⁇ is 90 degrees or 120 degrees.
  • the height b of the first portion is, for example, about 1.5 mm to 2.0 mm.
  • the height b is 1.8 millimeters (mm).
  • the first portion of FIG. 2 can be considered to be obtained by truncating the first portion of FIG. 3B, so that in addition to the height b, the description of other parameters applies to the first portion of FIG.
  • the axis of the second portion of the first alignment aperture 101 is, for example, also perpendicular to the plane of the mask 210.
  • the height a of the second portion is, for example, about 0.8 mm to 1.2 mm.
  • the height a is 1.0 mm.
  • the above description regarding the second portion of the first alignment hole 101 is equally applicable.
  • the first alignment hole 101 includes a third portion extending from the deepest position at the bottom thereof to the bottom of the frame 100, and the orthographic projection of the second alignment hole 211 on the frame 100 is located at the first alignment hole 101.
  • the third portion of the first alignment aperture 101 extends in a vertical direction.
  • FIG. 3A by having the orthographic projection of the second alignment hole 211 on the frame 100 on the inner wall of the first alignment hole 101, the deepest position of the bottom of the first alignment hole 101 is generally not located in the second alignment.
  • the aperture 211 is within the orthographic projection on the frame 100. This avoids the effect of the stain spots that may occur at the deepest position at the bottom of the first alignment hole 101 on the alignment process. Therefore, when the orthographic projection of the second alignment hole 211 and the first alignment hole 101 When the deepest positions of the bottom are offset from each other, the first alignment hole 101 in the form of a blind hole is generally sufficient to avoid the influence of the stain spot on the alignment process.
  • the third portion of the first alignment hole 101 in FIG. 4 is not indispensable when the second alignment hole is shifted from the position where liquid residue may occur.
  • the opening of the third portion in the first alignment hole 101 is located at the deepest position of the bottom of the first alignment hole 101, which is sufficient to avoid liquid residue, thereby avoiding the influence of the stain spot on the alignment process.
  • the first alignment hole is provided with the third portion at the deepest position at the bottom to form the through hole, theoretically, the liquid does not remain in the first alignment hole, so that the second alignment position
  • the position at which the holes 211 are placed in the mask 210 is not constrained. That is, the orthographic projection of the second alignment hole 211 in FIG. 4 does not have to be shifted from the third portion.
  • the opening of the third portion in the first alignment hole 101 is not necessarily located at the deepest position of the bottom of the first alignment hole 101.
  • the opening of the third portion in the first alignment hole 101 is disposed on the inclined inner wall of the first alignment hole 101, and advantageously, the opening is not higher than the second alignment hole 211 A projected area on the inner wall of the first alignment hole 101.
  • the first alignment hole 101 on the frame 100 is a through hole, thereby avoiding residual liquid in the first alignment hole 101, thereby avoiding interference of residual liquid on the alignment.
  • Figure 5 is a schematic cross-sectional view of an alignment mark on a mask integrated frame of an embodiment of the present disclosure. Similar to FIGS. 2 and 4, the second alignment hole 211 on the mask 210 and the first alignment hole 101 on the frame 100 are both through holes.
  • the first alignment hole 101 on the frame 100 includes a first portion (a portion between the broken line CC' and the broken line DD'). The first portion is in the shape of a cylinder. The axis of the first portion is non-perpendicular to the plane in which the mask 210 is located.
  • the orthographic projection of the second alignment aperture 211 on the frame 100 is located on the inner wall of the first portion to ensure that the orthographic projection does not overlap any stain spots. Thereby, the vapor deposition apparatus can effectively recognize the alignment mark 1 by using the gray scale of the first alignment hole 101 on the frame different from the gray scale of the mask 210.
  • the axis of the first portion is at an angle ⁇ of not more than 90 degrees with the plane of the mask.
  • the angle ⁇ is about 30 to 60 degrees.
  • the angle ⁇ is 50 degrees or the like.
  • the first alignment hole in the form of a through hole, in order to reduce the occupied area of the first alignment hole on the frame, the first alignment hole further includes a third portion located at at least one end of the first portion a third portion having a cylindrical shape, and an axis of the third portion and the mask plate In the plane perpendicular, for example, as shown in FIG. 5, a third portion (a portion above the broken line CC' and a portion below the broken line DD') is provided at both upper and lower ends of the first portion of the first alignment hole 101. At the time of production, a third portion is first formed on both sides of the frame, and then a first portion that connects the two third portions is formed.
  • the frame 100 and the mask 210 are formed of, for example, a metal material.
  • the above-described various types of first alignment holes 101 are formed in the frame 100 by a machining process. Taking FIG. 5 as an example, at the time of fabrication, a vertically extending third portion is first formed by machining on both sides of the frame 100, and then a first portion is formed to form a first alignment hole 101 in the form of a through hole. Since the third portions are respectively formed at both ends of the first portion, the two third portions do not need to be too long. From the perspective of the machining process, the first alignment hole 101 of this configuration is advantageous.
  • the mask 210 is fixed to the frame 100 by, for example, soldering.
  • the mask integration framework includes a plurality of the above described alignment marks.
  • the leftmost and rightmost mask plates 210 on the frame 100 are provided with second alignment holes 211 at both upper and lower ends, so as to be at the four corners of the mask integrated frame.
  • Four alignment marks 1 are formed. It should be noted that the mask 210 provided with the second alignment hole 211 is not necessarily provided on the leftmost and rightmost sides of the frame 100.
  • embodiments of the present disclosure also provide an evaporation apparatus including the above-described mask integration frame.
  • the first portion of the first alignment hole is described as a cone or a truncated cone.
  • the concepts of the present disclosure are not limited to the first portion having such a shape.
  • the first portion may also have a composite shape consisting of a truncated cone and a hemisphere.

Abstract

一种掩膜集成框架，包括框架(100)以及固定在框架(100)上的掩膜板(210、220)，其中掩膜集成框架设置有对位标记(1)，并且对位标记(1)包括设置在框架(100)上的第一对位孔(101)以及设置在掩膜板(210)上的第二对位孔(211)，以及其中第一对位孔(101)为通孔；或者第一对位孔(101)为盲孔，盲孔底部最深的位置与第二对位孔(211)在框架(100)上的正投影无交叠。还包括一种蒸镀设备。

Description

掩膜集成框架及蒸镀设备
相关专利申请
本申请主张于2016年5月13日提交的中国专利申请201610320002.8的优先权，其全部内容通过引用结合于此。
技术领域
本公开涉及显示领域，尤其涉及一种掩膜集成框架及蒸镀设备。
背景技术
OLED(Organic Light Emitting Diode，有机发光二极管)显示面板具有自发光、反应快、亮度高、轻薄等诸多优点，已经逐渐成为显示领域的主流。
OLED显示面板包括阵列排布的多个子像素单元。每一个子像素单元包括阳极、发光层和阴极。发光层采用有机电致发光材料形成，目前主要采用掩膜板并通过蒸镀工艺制作在各子像素单元中。在进行蒸镀工艺时，掩膜板必须焊接在框架上放在蒸镀设备里面使用。通过焊接等方式固定在一起的掩膜板和框架称为MFA(Mask Frame Assemble，掩膜集成框架)。对位掩膜板在使用过程中容易存在液体残留，从而不利地影响对位过程，甚至无法对位。因此，消除液体残留对对位过程的影响是本领域亟待解决的问题。
发明内容
本公开旨在减轻或消除一个或多个前文所述的问题。
本公开实施例提供了一种掩膜集成框架，包括框架以及固定在所述框架上的掩膜板，其中所述掩膜集成框架设置有对位标记，并且所述对位标记包括设置在所述框架上的第一对位孔以及设置在所述掩膜板上的第二对位孔，以及其中所述第一对位孔为通孔(through hole)；或者所述第一对位孔为盲孔(blind hole)，所述盲孔底部最深的位置与所述第二对位孔在所述框架上的正投影无交叠。
例如，所述第一对位孔包括第一部(segment)，并且所述第一部的内壁与所述掩膜板所在平面非垂直。
例如，当所述第一对位孔为盲孔时，所述第一部呈圆锥体状，并 且所述第一部的轴线垂直于所述掩膜板所在平面。
例如，所述第二对位孔在所述框架上的正投影位于所述第一部的内壁上。
例如，所述第一部的锥角为约60度～150度，并且所述第一部的高为约1.5毫米～2.0毫米。
例如，所述第一对位孔还包括呈柱体状的第二部，并且所述第二部的轴线垂直于所述掩膜板所在平面。
例如，所述第二部的高度为约0.8毫米～1.2毫米。
例如，当所述第一对位孔为通孔时，所述第一对位孔还包括从所述第一部沿竖直方向延伸到所述框架的底部的第三部。
例如，所述第三部在所述第一部中的开口不高于所述第二对位孔在所述第一对位孔的内壁上的投影区域。
例如，所述第三部从所述第一对位孔的底部最深的位置延伸到所述框架的底部。
例如，当所述第一对位孔为通孔时，所述第一部呈柱体状，并且所述第一部的轴线与所述掩膜板所在平面非垂直。
例如，所述第一部的轴线与所述掩膜板所在平面之间的夹角为约30度～60度。
例如，所述第一对位孔还包括位于所述第一部至少一端的第三部，所述第三部呈柱体状，并且所述第三部的轴线与所述掩膜板所在平面垂直。
例如，所述第二对位孔为通孔。
例如，所述框架和所述掩膜板由金属材质形成，并且所述掩膜板焊接在所述框架上。
例如，所述掩膜集成框架包括四个或更多个所述对位标记。
本公开还提供了一种蒸镀设备，包括上述的掩膜集成框架。
附图说明
图1是本公开实施例的一种掩膜集成框架的示意图；
图2是本公开实施例的一种掩膜集成框架上的对位标记的示意图；
图3A是本公开实施例的一种掩膜集成框架上的对位标记的示意图；
图3B是图3A中的对位标记的俯视图；
图4是本公开实施例的一种掩膜集成框架上的对位标记的示意图；以及
图5是本公开实施例的一种掩膜集成框架上的对位标记的示意图。
具体实施方式
下面结合附图和实施例，对本公开的具体实施例作进一步详细描述。以下实施例用于说明本公开，但不用来限制本公开的范围。
本公开实施例提供了一种掩膜集成框架，包括框架以及固定在所述框架上的掩膜板，其中所述掩膜集成框架设置有对位标记，并且所述对位标记包括设置在所述框架上的第一对位孔以及设置在所述掩膜板上的第二对位孔，以及其中所述第一对位孔为通孔；或者所述第一对位孔为盲孔，所述盲孔底部最深的位置与所述第二对位孔在所述框架上的正投影无交叠。
在本公开的上下文中，术语“在框架上的正投影”是指沿与框架的表面垂直的方向上的投影。
为在蒸镀前与TFT基板对位，MFA的四角设置有用于对位的对位标记(mark)。目前设计是在框架的四个角分别制作圆锥孔，并在对位掩膜板(alignment mask)上对应的位置制作对位孔。通常，对位掩膜板上的对位孔的中心与其下方的框架上的圆锥孔的中心重合。在对位过程中，通过CCD图像传感器对其进行图像采集，并利用灰阶的不同识别出对位掩膜板上的对位孔的边缘，进而实现与TFT基板进行对位。然而，对于上述的MFA，在对掩膜板清洗后，即使经过气刀喷吹，液体(药液或者水)仍可能残留于框架上的圆锥孔内。液体残留时，液体在重力作用下位于圆锥孔最深的位置处，并且蒸发后在此处形成渍斑(spot)。在对位过程中，由于渍斑与对位孔的中心重合，图像传感器采集的图像中无法识别出对位掩膜板上的对位孔的边缘。这造成对位掩膜板抓取失败，使蒸镀设备产生报警。
本公开实施例提供的掩膜集成框架有效缓解或者彻底解决由于框架上的对位孔中残留液体从而干扰对位的问题。
例如，对于本公开实施例提供的掩膜集成框架，所述第一对位孔包括第一部，并且所述第一部的内壁与所述掩膜板所在平面非垂直。 所述第二对位孔在所述框架上的正投影位于所述第一部的内壁上。
参见图1，图1是本公开实施例的一种掩膜集成框架的示意图。该掩膜集成框架包括框架100以及设置在框架100上的掩膜板210、220。掩膜板210、220包括设置有对位孔的掩膜板210(即对位掩膜板)以及若干未设置有对位孔的掩膜板220。所述掩膜集成框架设置有对位标记1。对位标记1包括设置在所述框架100上的第一对位孔101以及设置在所述掩膜板210上的第二对位孔211。掩膜板210上的第二对位孔211为通孔。
图2示意性示出本公开实施例的一种掩膜集成框架上的对位标记的剖面图。第一对位孔101包括呈截顶圆锥体状的第一部(虚线AA′和虚线BB′之间的部分)、位于第一部一侧的呈柱体状的第二部(虚线AA′上方的部分)、以及位于第一部另一侧的呈柱体状的第三部(虚线BB′下方的部分)。整体而言，第一对位孔101为贯穿框架100的通孔。在此实施例中，第三部从第一对位孔101底部最深的位置延伸到框架100底部。这种情况下，掩膜板210清洗后，框架100上的液体经由第三部被排放，避免液体残留在第一对位孔101中。第二对位孔211正下方的位置不会出现由残留液体形成的渍斑，使得在对位过程中第二对位孔211被有效地识别。
在图2所示实施例中，第二对位孔211设置在掩膜板210的中心位置，第一对位孔101的第三部与第二对位孔211在框架100上的正投影重叠。然而本公开不限于此，原则上第三部的开口可设置在第一对位孔中的任何位置。具体而言，在第一对位孔101为通孔的情况下，在掩模210清洗后的气刀喷吹过程中，液体更容易经由该通孔被排放离开框架100，从而减轻或避免在第一对位孔101内形成渍斑。因此，通过将第一对位孔101设计成通孔形式，预期可减小在第一对位孔内形成渍斑的可能性。
图3A示意性示出本公开实施例的一种掩膜集成框架上的对位标记的剖面图。在此实施例中，框架100上的第一对位孔为盲孔。如图3A所示，第二对位孔211在框架100上的正投影位于第一对位孔101的内壁上。第一对位孔101底部最深的位置位于第二对位孔211在框架100上的正投影之外。即，第一对位孔101底部最深的位置不位于第二对位孔211在框架100上的正投影之内。
对于图3A中的对位标记1，其俯视图如图3B所示。当第一对位孔101中残留有较少的液体时，由于重力作用，残留液体通常位于第一对位孔最深的位置处(即图3B中的虚线区域内)。在进行对位时，蒸镀设备仍能够利用框架100上第一对位孔101的灰阶与掩膜板210的灰阶不同，有效识别出对位标记1，避免残留液体对对位的干扰。
如图3B所示，框架100的厚度c例如为约20毫米～30毫米。例如，厚度c为15毫米等。对于上述的对位标记1，第一对位孔101的开口的形状为圆形，或者为正多边形(如正八边形)。当开口的形状为圆形时，开口的直径d例如为约5毫米～7毫米。例如开口直径d为6毫米。例如，如图3A所示，框架100上的第一对位孔101包括呈圆锥体状的第一部(虚线BB′下方的部分)以及呈柱体状的第二部(虚线BB′上方的部分)。第二对位孔211在框架100上的正投影位于第一部的内壁上。在制作时，先对在掩膜板形成第二部，然后再形成第一部。
第一对位孔101的第一部的轴线垂直于所述掩膜板210所在平面。第一部的锥角α例如为约60度～150度。例如，锥角α为90度或120度。第一部的高b例如为约1.5毫米～2.0毫米。例如高b为1.8毫米(mm)。图2的第一部可以视为通过对图3B的第一部进行截顶而得到，因此除了高度b以外，有关其它参数的描述适用于图2的第一部。
第一对位孔101的第二部的轴线例如也垂直于掩膜板210所在平面。第二部的高度a例如为约0.8毫米～1.2毫米。例如高度a为1.0毫米。对于图2所示的情形，上述有关第一对位孔101的第二部的描述同样适用。
图4示意性示出本公开实施例的一种掩膜集成框架上的对位标记的剖面图。在此实施例中，第一对位孔101包括从其底部最深的位置延伸到框架100底部的第三部，并且第二对位孔211在框架100上的正投影位于第一对位孔101的内壁上。在图2和图4所示实施例中，第一对位孔101的第三部沿竖直方向延伸。
请参考图3A和图4。如图3A所示，通过使第二对位孔211在框架100上的正投影位于第一对位孔101的内壁上，通常导致第一对位孔101底部最深的位置不位于第二对位孔211在框架100上的正投影之内。这避免了在第一对位孔101底部最深的位置可能出现的渍斑对对位过程的影响。因此，当第二对位孔211的正投影与第一对位孔101 底部最深的位置相互错开时，呈盲孔形式的第一对位孔101通常足以避免渍斑对对位过程的影响。通过比较图3A和图4可知，当第二对位孔与可能发生液体残留的位置错开时，图4中的第一对位孔101的第三部不是必不可少的。
请参考图2和图4。如图2所示，第三部在第一对位孔101中的开口位于第一对位孔101的底部最深的位置，这足以避免液体残留，进而避免渍斑对对位过程的影响。通过比较图2和图4可知，当第一对位孔在底部最深的位置设置有第三部以形成通孔时，理论上液体不会残留在第一对位孔内，使得第二对位孔211在掩膜板210中的设置位置不受约束。即，图4中的第二对位孔211的正投影不必与第三部错开。
在图4所示实施例中，第三部在第一对位孔101中的开口不一定位于第一对位孔101的底部最深的位置。在其它实施例中，第三部在第一对位孔101中的开口设置在该第一对位孔101的倾斜内壁上，并且有利的是，该开口不高于第二对位孔211在第一对位孔101的内壁上的投影区域。
在图2和图4所示实施例中，框架100上的第一对位孔101为通孔，从而避免在该第一对位孔101中残留液体，进而避免残留液体对对位的干扰。
图5示意性示出本公开实施例的一种掩膜集成框架上的对位标记的剖面图。与图2和图4类似，掩膜板210上的第二对位孔211以及框架100上的第一对位孔101均为通孔。框架100上的第一对位孔101包括第一部(虚线CC′与虚线DD′之间的部分)。所述第一部呈柱体状。第一部的轴线与掩膜板210所在平面非垂直。第二对位孔211在框架100上的正投影位于第一部的内壁上，从而保证该正投影不会与任何渍斑交叠。藉此，蒸镀设备能够利用框架上第一对位孔101的灰阶与掩膜板210的灰阶不同，有效识别出对位标记1。
所述第一部的轴线与所述掩膜板所在平面之间成非90度的夹角β。例如夹角β为约30度～60度。例如夹角β为50度等。
例如，对于采用通孔形式的第一对位孔，为减小第一对位孔在框架上的所占面积，所述第一对位孔还包括位于所述第一部至少一端的第三部，所述第三部呈柱体状，且所述第三部的轴线与所述掩膜板所 在平面垂直，例如，如图5所示，在第一对位孔101的第一部的上下两端均设置第三部(虚线CC′上方的部分和虚线DD′下方的部分)。在制作时，首先在框架的两侧形成第三部，然后再形成连通这两个第三部的第一部。
对于本公开实施例中的掩膜集成框架，框架100以及掩膜板210例如由金属材质形成。通常，通过机加工工艺在框架100中形成上述各种类型的第一对位孔101。以图5为例，在制作时，首先在框架100的两侧通过机加工形成竖直延伸的第三部，然后形成第一部以形成通孔形式的第一对位孔101。由于第三部分别形成于第一部的两端，两个第三部都不需要太长。从机加工工艺的角度，这种配置的第一对位孔101是有优势的。
掩膜板210通过例如焊接的方式固定在框架100上。
例如，掩膜集成框架包括多个上述的对位标记。例如，如图1所示，框架100上的最左侧和最右侧的掩膜板210在上下两端均设有第二对位孔211，从而在掩膜集成框架的四个角的位置处形成四个对位标记1。应指出，设有第二对位孔211的掩膜板210不一定设置在框架100上的最左侧和最右侧。
此外，本公开实施例还提供了一种蒸镀设备，包括上述的掩膜集成框架。
在上述各实施例中，以第一对位孔的第一部呈圆锥体状或截顶圆锥体状为例进行描述。实践中，本公开的构思不限于具有这种形状的第一部。例如，在图3A的盲孔情况下，第一部还可能具有由截顶圆锥和半球形组成的复合形状。
以上实施例仅用于说明本公开，而并非对本公开的限制，有关技术领域的普通技术人员，在不脱离本公开的精神和范围的情况下，还可以做出各种变化和变型，因此所有等同的技术方案也属于本公开的范畴，本公开的保护范围应由权利要求限定。

Claims (17)

  1. 一种掩膜集成框架，包括框架以及固定在所述框架上的掩膜板，
    其中所述掩膜集成框架设置有对位标记，并且所述对位标记包括设置在所述框架上的第一对位孔以及设置在所述掩膜板上的第二对位孔，以及
    其中所述第一对位孔为通孔；
    或者所述第一对位孔为盲孔，所述盲孔底部最深的位置与所述第二对位孔在所述框架上的正投影无交叠。
  2. 根据权利要求1所述的掩膜集成框架，其中所述第一对位孔包括第一部，并且所述第一部的内壁与所述掩膜板所在平面非垂直。
  3. 根据权利要求2所述的掩膜集成框架，其中当所述第一对位孔为盲孔时，所述第一部呈圆锥体状，并且所述第一部的轴线垂直于所述掩膜板所在平面。
  4. 根据权利要求3所述的掩膜集成框架，其中所述第二对位孔在所述框架上的正投影位于所述第一部的内壁上。
  5. 根据权利要求3所述的掩膜集成框架，其中所述第一部的锥角为约60度～150度并且高为约1.5毫米～2.0毫米。
  6. 根据权利要求2所述的掩膜集成框架，其中所述第一对位孔还包括呈柱体状的第二部，并且所述第二部的轴线垂直于所述掩膜板所在平面。
  7. 根据权利要求6所述的掩膜集成框架，其中所述第二部的高度为约0.8毫米～1.2毫米。
  8. 根据权利要求2所述的掩膜集成框架，其中当所述第一对位孔为通孔时，所述第一对位孔还包括从所述第一部沿竖直方向延伸到所述框架的底部的第三部。
  9. 根据权利要求8所述的掩膜集成框架，其中所述第三部在所述第一部中的开口不高于所述第二对位孔在所述第一对位孔的内壁上的投影区域。
  10. 根据权利要求8所述的掩膜集成框架，其中所述第三部从所述第一对位孔的底部最深的位置延伸到所述框架的底部。
  11. 根据权利要求2所述的掩膜集成框架，其中当所述第一对位孔 为通孔时，所述第一部呈柱体状，并且所述第一部的轴线与所述掩膜板所在平面非垂直。
  12. 根据权利要求11所述的掩膜集成框架，其中所述第一部的轴线与所述掩膜板所在平面之间的夹角为约30度～60度。
  13. 根据权利要求11所述的掩膜集成框架，其中所述第一对位孔还包括位于所述第一部至少一端的第三部，所述第三部呈柱体状，并且所述第三部的轴线与所述掩膜板所在平面垂直。
  14. 根据权利要求1-13所述的掩膜集成框架，其中所述第二对位孔为通孔。
  15. 根据权利要求1-13中任意一项所述的掩膜集成框架，其中所述框架和所述掩膜板由金属材质形成，并且所述掩膜板焊接在所述框架上。
  16. 根据权利要求1-13中任意一项所述的掩膜集成框架，包括4个或更多个所述对位标记。
  17. 一种蒸镀设备，包括权利要求1-16中任意一项所述的掩膜集成框架。
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