WO2017190537A1 - 掩膜板、母板、掩膜板制造设备和方法及显示基板蒸镀系统 - Google Patents

掩膜板、母板、掩膜板制造设备和方法及显示基板蒸镀系统 Download PDF

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Publication number
WO2017190537A1
WO2017190537A1 PCT/CN2017/072223 CN2017072223W WO2017190537A1 WO 2017190537 A1 WO2017190537 A1 WO 2017190537A1 CN 2017072223 W CN2017072223 W CN 2017072223W WO 2017190537 A1 WO2017190537 A1 WO 2017190537A1
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WO
WIPO (PCT)
Prior art keywords
mask
cover
block
pattern
mask layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/072223
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English (en)
French (fr)
Inventor
嵇凤丽
梁逸南
白珊珊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Ordos Yuansheng Optoelectronics Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US15/547,348 priority Critical patent/US10131982B2/en
Publication of WO2017190537A1 publication Critical patent/WO2017190537A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • Embodiments of the present disclosure relate to the field of display technologies, and in particular, to a mask, a motherboard, a mask manufacturing apparatus and method, and a display substrate evaporation system.
  • An Organic Light Emitting Diode (OLED) display panel is a panel that utilizes an OLED as a display pixel. Compared to conventional liquid crystal display panels, OLEDs emit light by themselves rather than using a backlight.
  • the luminescence principle of OLED utilizes the phenomenon that organic semiconductor materials and luminescent materials are driven by electric field to cause luminescence by carrier injection and recombination.
  • an indium tin oxide (ITO) transparent electrode and a metal electrode are generally used as an anode and a cathode of the OLED, respectively.
  • ITO indium tin oxide
  • electrons and holes are injected from the cathode and the anode to the electron and hole transport layers, respectively.
  • the electrons and holes migrate to the light-emitting layer through the electron and hole transport layers, respectively, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, which are excited by radiation to emit visible light.
  • the OLED display panel can be mainly classified into a passive matrix (PM) and an active matrix (AM).
  • PM passive matrix
  • AM active matrix
  • the cathode and the anode are formed in a matrix shape, and the OLED pixels are illuminated in a scanning manner.
  • AM type panel a complete cathode layer is usually provided, and an anode layer is covered with a thin film transistor (TFT) array for determining which pixels emit light and thereby determines the composition of the image.
  • TFT thin film transistor
  • the OLED light-emitting device is prepared by vapor-depositing an organic material onto a substrate (for example, a TFT substrate in an AM-type panel).
  • a substrate for example, a TFT substrate in an AM-type panel.
  • Evaporating organic materials usually requires the use of a mask such as a fine metal mask (FMM, Fine Metal) Mask), and the mask is usually soldered on a metal frame and used in an evaporation machine, wherein the mask and the metal frame are welded together and are commonly referred to as Mask Frame Assemble (MFA). Since the mask has a significant influence on the display performance of the OLED light-emitting layer obtained by vapor deposition, there is a need to continuously improve the performance of the mask.
  • FMM fine metal mask
  • MFA Mask Frame Assemble
  • Embodiments of the present disclosure provide a mask, a mother board, a mask manufacturing apparatus and method, and a display substrate evaporation system capable of improving left and right brightness darkening of an OLED display panel and improving yield.
  • a mask comprising a pattern mask layer having a plurality of pattern mask blocks spaced apart from each other and arranged in parallel, and having a plurality of cover masks spaced apart from each other and arranged in parallel a masking layer of the film block, the cover mask block covering a gap between adjacent graphic mask blocks, the graphic mask block including an active area, an inactive area, and between the active area and the inactive area
  • the margin area, the active area, the non-active area, and the margin area each have a plurality of pixel-shaped openings, and the cover mask block also covers the pixel-formed openings of the inactive areas of adjacent pattern mask blocks.
  • the non-active area and the margin area of the pattern mask block have a plurality of pixel-shaped openings
  • the edge of the effective area and the inside are more etched. Uniform, so that the evaporation angle becomes more uniform
  • the magnetic distribution of the edge and the inner portion of the effective region becomes more uniform, so that the organic material layer obtained by vapor deposition The thickness becomes more uniform, thereby improving the left and right brightness darkening of the display panel and improving the yield.
  • the cover mask block also covers the pixel-shaped opening of the inactive area of the adjacent pattern mask block, it is possible to avoid evaporation of the organic material to a region where the organic material layer is not desired to be disposed.
  • the plurality of pixel forming openings of the effective area are arranged in a plurality of mutually spaced pixel forming regions; and the masking plate further comprises a plurality of spaced apart and parallel arranged Supporting a mask layer of the mask block, the support mask block being vertically aligned with the length direction of the pattern mask block and corresponding to a gap between adjacent pixel forming regions.
  • the sagging of the pattern mask layer can be reduced due to the support of the mask block to support the pattern mask block.
  • the supporting mask block since the position of the supporting mask block corresponds to the gap between adjacent pixel forming regions, the supporting mask block does not affect the evaporation of the organic material.
  • the margin area has 1 column or 2 columns of pixel-shaped openings.
  • the cover mask block or the pattern mask block has at least one positioning opening, or the cover mask block and the graphic mask block each have at least one positioning opening.
  • the cover mask block since the cover mask block has at least one positioning opening, the cover mask block can be accurately positioned to cover the adjacent pattern mask by using the corresponding positioning pattern on the motherboard during the process of manufacturing the mask.
  • a pixel forming opening of the inactive area of the block Since the portion provided with the at least one positioning opening can be cut after the mask is manufactured, this feature is an optional feature of the disclosed mask as a finished product.
  • the pixel-shaped opening of the non-active area and the margin area has the same structure, size, and arrangement as the pixel-shaped opening of the effective area.
  • the pixel-shaped opening of the ineffective area and the margin area has the same structure, size, and arrangement as the pixel-shaped opening of the effective area, a more uniform vapor deposition angle and magnetic force distribution can be obtained, thereby improving the position better.
  • the left and right brightness of the display panel is dimmed and the yield is improved.
  • the mask further includes a mask frame, and the graphic mask layer and the cover mask layer are disposed on the mask frame.
  • the mask further includes a mask frame, and the pattern mask layer, the cover mask layer, and the support mask layer are disposed on the mask frame.
  • a motherboard for performing positioning in the process of manufacturing the mask according to the above first aspect, wherein at least one of the following is disposed on the motherboard a: at least one first positioning pattern for positioning the graphic mask block for each graphic mask block; and at least one second positioning pattern disposed for each of the overlay mask blocks for masking the overlay
  • the film block is positioned to cover the pixel shaped opening of the inactive area of the adjacent graphic mask block.
  • the pattern mask block and the cover mask block can be accurately positioned in the process of manufacturing the mask sheet.
  • the at least one first positioning pattern or the at least one second positioning pattern includes at least two dot patterns spaced apart from each other for at least corresponding to the graphic mask block or the cover mask block The two holes are aligned.
  • a mask manufacturing apparatus for manufacturing the mask according to the above sixth aspect, comprising: the motherboard according to the eighth or ninth aspect, Positioning the cover mask layer and the pattern mask layer; a base for supporting the motherboard and the mask frame; and a netting machine for the cover mask layer and the graphic mask layer Performing a stretching process; and a welding machine for respectively soldering the positioned and stretched cover mask layer and the graphic mask layer to the mask frame.
  • a display substrate evaporation system including an evaporation machine, further comprising the mask according to any one of the above first to seventh aspects.
  • the thickness of the organic material layer obtained by vapor deposition becomes more uniform, so that the left and right brightness of the display panel can be improved. Phenomenon and increase yield.
  • a mask manufacturing method for manufacturing the mask according to the above sixth invention comprising: using the mother board according to the eighth or ninth invention described above Positioning the cover mask layer and the pattern mask layer; performing stretching treatment on the cover mask layer and the pattern mask layer using a screen machine; and separately positioning and stretching the cover using a soldering machine A mask layer and a pattern mask layer are soldered to the mask frame.
  • FIG. 1 is a schematic structural view of a mask in which an embodiment of the present disclosure can be applied;
  • FIG. 2 is a schematic structural view of a prior art graphic mask block and a cover mask block
  • FIG. 3 is a schematic structural diagram of a graphic mask block according to an embodiment of the present disclosure.
  • FIG. 4 is a schematic structural diagram of a graphic mask block and a cover mask block according to an embodiment of the present disclosure
  • FIG. 5 is a schematic structural view of a motherboard according to an embodiment of the present disclosure.
  • FIG. 6 is a schematic structural view of a mask manufacturing apparatus according to an embodiment of the present disclosure.
  • the thickness of the organic material layer obtained by vapor deposition using the conventional mask is not uniform, the brightness of the panel is dimmed to the left and right, thereby reducing the panel yield.
  • Embodiments of the present disclosure provide a mask, a mother board, a mask manufacturing apparatus and method, and a display substrate evaporation system capable of improving left and right brightness darkening of an OLED display panel and improving yield. Further, the principles of the present disclosure can be applied to an AM type display panel, and can also be applied to a PM type display panel.
  • the mask, the mother board, the mask manufacturing apparatus and method, and the display substrate evaporation system of the present disclosure will be specifically described in the corresponding embodiments.
  • the mask 100 includes a mask frame 102, and a graphic mask layer 104, a cover mask layer 106, and a support mask layer 108 that are fixed (eg, soldered) on the mask frame 102.
  • the mask frame 102 serves to serve as a support frame and may be made of a metal material such as stainless steel.
  • the pattern mask layer 104 is for vapor-depositing an organic material on a substrate (for example, a TFT substrate in an AM-type panel) to form display pixels, and may be made of a metal material such as stainless steel.
  • the pattern mask layer 104 has a plurality of pattern mask blocks 104-1, 104-2, ..., 104-10 spaced apart from each other and arranged in parallel. Although 10 graphic mask blocks are shown in the figures, this is merely an illustrative example. The number of graphic mask blocks can take any suitable value depending on the actual application.
  • Each of the graphic mask blocks may have a plurality of pixel forming regions (see FIG. 5), and each of the pixel forming regions may have a plurality of pixel forming openings.
  • the cover mask layer 106 has a plurality of cover mask blocks 106-0, 106-1, ..., 106-10 spaced apart from each other and arranged in parallel for covering the gap. Similar to a graphic mask block, the number of overlay mask blocks can take any suitable value depending on the actual application.
  • the cover mask layer 106 can be made of a metal material such as stainless steel.
  • the support mask layer 108 has a plurality of support mask blocks 108-1, 108-2, ..., 108-6 spaced apart from each other and arranged in parallel, wherein the support mask block is perpendicular to the length direction of the pattern mask block. Arranged and positioned corresponding to gaps between adjacent pixel forming regions. The gap between two adjacent support mask blocks may correspond to one pixel forming region or may correspond to more than one pixel forming region.
  • the sagging of the pattern mask layer can be reduced due to the supporting action of the supporting mask block, and on the other hand, since the position of the supporting mask block corresponds to the gap between adjacent pixel forming regions, the support The mask block does not affect the evaporation of organic materials. Similar to a graphic mask block, the number of support mask blocks can take any suitable value depending on the actual application.
  • the support mask layer 108 can be made of a metallic material such as stainless steel. Further, the metal materials for forming the above-described mask frame 102, pattern mask layer 104, cover mask layer 106, and support mask layer 108 may be the same or different from each other.
  • the mask comprises a mask frame, which in this case is commonly referred to as the MFA mentioned above.
  • the structure of the mask in which the embodiment of the present disclosure can be applied is not limited to the example shown in FIG. 1.
  • the mask may include only the pattern mask layer and the cover mask layer, and the pattern mask layer and the cover mask layer may be soldered. Connect together in any suitable way.
  • the mask may include only the pattern mask layer, the cover mask layer, and the support mask layer, and the pattern mask layer, the cover mask layer, and the support mask layer may be fixed by any suitable means such as soldering. Together.
  • the prior art pattern mask block includes an active area having a plurality of pixel-shaped openings, wherein the plurality of pixel-shaped openings may be in the form of a plurality of mutually spaced apart pixel-forming regions as mentioned above. Arrangement.
  • prior art graphic mask blocks may also have dummy pixel-shaped openings outside the edges of the active area. Since the organic material is evaporated to the outside of the effective area on the substrate when the number of dummy openings is large, the number of dummy openings of the prior art is very small (typically 1 column or 2 columns of pixel-shaped openings).
  • the prior art cover mask covers only the gap between adjacent pattern mask blocks.
  • the display panel obtained by vapor deposition of the mask of the prior art may have a phenomenon in which the left and right brightness is darkened.
  • This phenomenon There are two main reasons for this phenomenon.
  • One reason is that in the case of the current narrow bezel, the number of dummy openings of the pattern mask layer is small, and the pattern mask layer is unevenly distributed due to the stress distribution at the intersection of the pixel forming opening and the raw material in the evaporation process, the effective area and the raw material area. If the magnetic difference is too large, the edge of the pattern mask layer is adsorbed to a large extent, so that a vaporized shadow is generated.
  • the second reason is that the number of dummy openings of the pattern mask layer is small.
  • the etching degree of the edge region is different from the inside.
  • the material of the effective area edge is etched more than the center of the effective area, so that the evaporation angle is reduced, which also causes the shadow of the evaporation to increase, and finally the thickness of the organic material deposited on the left and right sides of the display panel is intermediate. Thin, so the brightness of the left and right sides of the panel is dark.
  • the graphics mask block 300 includes an active area 302, a non-active area 306, and a margin area 304 between the active area 302 and the inactive area 306.
  • the active area 302 has a plurality of pixel shaped openings, wherein the plurality of pixel shaped openings can be arranged in the form of a plurality of mutually spaced apart pixel shaped regions as mentioned above.
  • Both the margin area 304 and the inactive area 306 have a plurality of pixel shaped openings.
  • the pixel forming openings in the margin area 304 and the inactive area 306 are dummy openings.
  • Number of pixel forming openings in the margin area 304 The amount is not limited to the outside of the effective region of the substrate obtained by vapor deposition (for example, affecting the conductive property of the outer region), and is usually one column or two columns of pixel-shaped openings.
  • the pixel forming opening in the inactive area 306 affects the outside of the effective area of the vapor-deposited substrate, and the number thereof may be determined according to the improvement of the display performance of the vapor-deposited display panel (for example, the number may be Sequence to tens of columns of pixel shaped openings). It should be noted that in the example shown in FIG. 3, the pixel forming opening is a slot type full etch opening. However, the present disclosure is not limited to this example, and the pixel forming opening may also take any other suitable form depending on the actual application.
  • the graphic mask block 300 can be fabricated using any of the existing techniques for forming FMMs.
  • the pattern mask block 300 can be formed by sequentially performing photoresist coating, exposure using a mask for photolithography, development with a developing solution, etching with an etching solution, and stripping of the photoresist.
  • the pixel shaped openings of the inactive area 306 and the margin area 304 have the same structure, size, and arrangement as the pixel shaped openings of the active area 302.
  • the present disclosure is not limited to the example shown in FIG.
  • the pixel shaped openings of the inactive area 306 and the margin area 304 may also have a different structure, size, and arrangement than the pixel shaped openings of the active area 302, and the pixel forming openings of the inactive area 306 and the margin area 304
  • the structure, size and arrangement may be the same or different from each other.
  • the edges of the active area and the inside are more uniformly etched, so that the evaporation angle becomes more uniform, and on the other hand, the organic material is evaporated.
  • the magnetic distribution of the edge of the effective region and the inside becomes more uniform, so that the thickness of the organic material layer obtained by vapor deposition becomes more uniform, thereby improving the left and right brightness darkening of the display panel and improving the yield.
  • FIG. 4 is a structural schematic diagram of a graphic mask block and a cover mask block, in accordance with an embodiment of the present disclosure.
  • the pixel forming opening in the inactive area 306 affects the outside of the effective area of the vapor-deposited substrate, so that as shown in FIG. 4, the covering mask block covers the adjacent graphic mask block.
  • the pixel of the area forms an opening. Since the pixel forming opening in the margin area does not affect the outside of the effective area of the vapor-deposited substrate, the covering mask block does not need to cover the margin area.
  • the margin area can also be prevented from covering the mask block (due to, for example, the accuracy of the process) Covering the effective area affects the evaporation of organic materials.
  • the prior art cover mask covers only the gap between the adjacent two mask blocks, so the positional accuracy of the cover mask is not required.
  • the cover mask block shown in FIG. 4 blocks the pixel-shaped opening of the inactive area, which requires high positional accuracy for covering the mask block. Therefore, as shown in FIG. 4, the cover mask block further has two positioning holes spaced apart from each other for alignment with a corresponding positioning pattern on a positioning mother board such as a mother glass, thereby The cover mask block is accurately positioned to cover the pixel shaped opening of the non-active area.
  • the pattern mask block also has two positioning holes spaced apart from each other for corresponding positioning patterns on the positioning mother board. Align (see Figure 5).
  • the cover mask block and the graphic mask block may each have only one elongated positioning opening.
  • the positioning plate can have a corresponding elongated positioning pattern for alignment with the positioning opening. That is to say, both the cover mask block and the graphic mask block have at least one positioning opening.
  • the positioning opening is an optional feature of the mask as a finished product.
  • the structure of the mask in which the embodiment of the present disclosure can be applied is not limited to the example shown in FIG. 1.
  • the mask may include only the pattern mask layer and the cover mask layer, and the pattern mask layer and the cover mask layer may be fixed together by any suitable means such as soldering.
  • the first embodiment of the present disclosure provides a mask comprising a pattern mask layer having a plurality of pattern mask blocks spaced apart from each other and arranged in parallel, and having a plurality of spaced apart and parallel Arranging a cover mask layer covering the mask block, the cover mask block covering a gap between adjacent pattern mask blocks, wherein the pattern mask block includes an active area, an inactive area, and an active area and a margin area between the non-active areas, the active area, the non-active area, and the margin area each having a plurality of pixel-shaped openings, and the cover mask block also covers an inactive area of an adjacent graphic mask block The pixel forms an opening.
  • the mask may include only the pattern mask layer, the cover mask layer, and the support mask layer, and the pattern mask layer, the cover mask layer, and the support mask layer may be soldered. Wait until any suitable way is fixed together. That is, a second embodiment of the present disclosure provides a mask comprising a pattern mask layer having a plurality of pattern mask blocks spaced apart from each other and arranged in parallel, and having a plurality of spaced apart and parallel Arranging a cover mask layer covering the mask block, the cover mask block covering a gap between adjacent pattern mask blocks, wherein the pattern mask block includes an active area, an inactive area, and an active area and a margin area between the non-active areas, the active area, the non-active area, and the margin area each having a plurality of pixel-shaped openings, and the cover mask block also covers an inactive area of an adjacent graphic mask block a pixel forming opening; wherein the plurality of pixel forming openings of the active area are arranged in a plurality of spaced apart pixel
  • the mask may comprise a mask frame. That is, the third embodiment of the present disclosure provides a mask which is different from the mask of the first embodiment in that it further includes a mask frame, the mask layer and the cover mask A layer is disposed on the mask frame. Moreover, the fourth embodiment of the present disclosure provides a mask which differs from the mask of the second embodiment in that it further includes a mask frame, the pattern mask layer, the cover mask layer, and A support mask layer is disposed on the mask frame.
  • FIG. 5 is a schematic structural view of a mother board according to an embodiment of the present disclosure.
  • two dot 502-1, 502-2 spaced apart from each other are provided for each graphic mask block for two holes in the graphic mask block. Align to position.
  • two dot dots 504-1, 504-2 spaced apart from each other are disposed for each of the cover mask blocks for alignment with the two holes in the cover mask block, thereby
  • the overlay mask block is positioned to cover a pixel shaped opening of the inactive area of the pattern mask block.
  • the positioning patterns 502-1, 502-2, 504-1, 504-2 can be achieved by depositing, for example, a metallic material onto a predetermined location on the mother glass panel using any existing deposition process.
  • the present disclosure is not limited to the example shown in FIG.
  • the shape of the positioning pattern is not limited to a dot, and may be other suitable shapes such as a square, a triangle, or the like.
  • the motherboard may have only one strip-shaped positioning pattern for each of the graphic mask blocks for alignment with corresponding elongated positioning openings in the pattern covering mask block.
  • the motherboard may have only one elongated strip of locating pattern for each of the overlay mask blocks for alignment with corresponding elongate locating openings in the overlay mask block. That is, the motherboard may have at least one first positioning pattern for each of the graphic mask blocks and at least one second positioning pattern for each of the overlay mask blocks.
  • the fifth embodiment of the present disclosure provides a motherboard since the motherboard can have at least one first positioning pattern for each of the graphic mask blocks and at least one second positioning pattern for each of the overlay mask blocks, It can be used at least for positioning in the process of manufacturing the mask of the first embodiment described above, wherein at least one for positioning the pattern mask block is provided for each of the graphic mask blocks on the motherboard a positioning pattern; and at least one second positioning pattern is disposed on the motherboard for each of the cover mask blocks for positioning the overlay mask block to cover an inactive area of an adjacent graphic mask block The pixel forms an opening.
  • FIG. 6 is a schematic structural view of a mask manufacturing apparatus according to an embodiment of the present disclosure.
  • the mask manufacturing apparatus 600 includes a base 602, a mother board 604, a net machine 606, and a welding machine 608.
  • the base 602 is used to support the motherboard 604 and the mask frame 610.
  • the motherboard 604 is used to locate the cover mask layer and the pattern mask layer, and has been described in detail with reference to FIG. 5, and details are not described herein again.
  • the stretcher 606 is used to perform a stretching process on the cover mask layer 612 and the pattern mask layer 614.
  • Welding machine 608 is used to weld positioned and stretched cover mask layer 612 and pattern mask layer 614 to mask frame 610, respectively, and may be implemented using, for example, a laser welder. That is to say, in addition to the motherboard 604, the base 602, the netting machine 606, and the welding machine 608 can adopt the same processes or functions as those in the existing mask manufacturing equipment, and will not be described herein.
  • the soldering sequence of the mask layer 612 and the pattern mask layer 614 may be solder mask layer 612, solder mask pattern 614, or the opposite solder sequence.
  • the mask frame 610 is illustrated as being placed over the motherboard 604 in FIG. 6, the mask frame 610 and the motherboard 604 may be arranged in other suitable manners (eg, a mask The frame 610 can surround the motherboard 604 in the same plane as the motherboard 604 as long as positioning can be achieved.
  • the sixth embodiment of the present disclosure provides a mask manufacturing apparatus which can be used at least for manufacturing the mask of the foregoing third embodiment, and includes: the mother board of the foregoing fifth embodiment, Positioning the cover mask layer and the pattern mask layer; a base for supporting the motherboard and the mask frame; and a netting machine for the cover mask layer and the graphic mask layer Performing a stretching process; and a welding machine for respectively soldering the positioned and stretched cover mask layer and the graphic mask layer to the mask frame.
  • the screen machine 606 can also perform a stretching process on the support mask layer described above, and the welder 608 can also weld the stretched support mask layer to the mask frame 610.
  • the soldering sequence covering the mask layer, the supporting mask layer and the pattern mask layer may be first soldering the mask layer, soldering the support mask layer, re-soldering the pattern mask layer, or any other suitable soldering sequence.
  • the present disclosure also provides a mask manufacturing method that can be used at least for fabricating the mask of the foregoing third embodiment, and includes: using the mother board of the foregoing fifth embodiment, the mask Positioning the layer and the pattern mask layer; performing stretching treatment on the cover mask layer and the pattern mask layer using a screen machine; and separately positioning and stretching the mask layer and the mask mask using a soldering machine A layer is soldered to the mask frame.
  • a display substrate evaporation system includes: an evaporation machine; and a mask according to various embodiments of the present disclosure described in Section I above for forming a pixel pattern on a substrate, usually a substrate At least one display screen area is arranged on the top.
  • Other components or components of the display substrate evaporation system may be the same as the corresponding processes or functions in the existing vapor deposition system, and will not be described herein.
  • the thickness of the organic material layer of the display substrate obtained by vapor deposition of the display substrate evaporation system becomes more uniform, thereby being able to be improved
  • the left and right brightness of the display panel is dimmed and the yield is improved.

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Abstract

掩膜板(100)、母板(500,604)、掩膜板制造设备(600)和方法及显示基板蒸镀系统。掩膜板(100)包括具有多个相互隔开且并行排列的图形掩膜块(104-1至104-10,300)的图形掩膜层(104,614)，和具有多个相互隔开且并行排列的覆盖掩膜块(106-1至106-10)的覆盖掩膜层(106,612)，覆盖掩膜块(106-1至106-10)覆盖相邻的图形掩膜块(104-1至104-10,300)之间的间隙；图形掩膜块(104-1至104-10,300)包括有效区(302)、非有效区(306)以及位于有效区(302)和非有效区(306)之间的裕量区(304)；有效区(302)、非有效区(306)和裕量区(304)均具有多个像素成形开口，并且覆盖掩膜块(106-1至106-10)还覆盖相邻的图形掩膜块(104-1至104-10,300)的非有效区(306)的像素成形开口。母板(500,604)用于在制造掩膜板（100）的过程中进行定位。掩膜板制造设备(600)包括母板(500,604)、基台(602)、张网机(606)和焊接机(608)。显示基板蒸镀系统包括蒸镀机和掩膜板(100)。

Description

掩膜板、母板、掩膜板制造设备和方法及显示基板蒸镀系统
本申请要求于2016年5月5日递交的中国专利申请第201620398823.9号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开的实施例涉及显示技术领域，特别涉及一种掩膜板、母板、掩膜板制造设备和方法及显示基板蒸镀系统。
背景技术
有机发光二极管(OLED，Organic Light Emitting Diode)显示面板是一种利用OLED作为显示像素的面板。相比于传统的液晶显示面板，OLED为自身发光，而非采用背光源。OLED的发光原理利用了有机半导体材料和发光材料在电场驱动下，通过载流子注入和复合导致发光的现象。具体地，在OLED中，通常用氧化铟锡(ITO)透明电极和金属电极分别作为该OLED的阳极和阴极。在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子和空穴传输层。电子和空穴分别经过电子和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
OLED显示面板主要可分为被动矩阵(PM，Passive Matrix)型和主动矩阵(AM，Active Matrix)型。在PM型面板中，阴极和阳极构成矩阵状，且以扫描方式点亮OLED像素。在AM型面板中，通常设有完整的阴极层，且在阳极层上覆盖有薄膜晶体管(TFT)阵列，用于决定哪些像素发光并进而决定图像的构成。
对于上述两种类型的面板，OLED发光器件的制备均是通过将有机材料蒸镀到基板(例如，在AM型面板中为TFT基板)上形成的。蒸镀有机材料通常需要使用掩膜板例如精细金属掩膜板(FMM，Fine Metal  Mask)，且掩膜板通常焊接在金属框架上且放在蒸镀机中使用，其中掩膜板和金属框架焊接在一起通常被称为掩膜框架组件(MFA，Mask Frame Assemble)。由于掩膜板对蒸镀所得的OLED发光层的显示性能具有显著的影响，因此存在着不断提高掩膜板的性能的需求。
发明内容
本公开的实施例提供了一种掩膜板、母板、掩膜板制造设备和方法及显示基板蒸镀系统，其能够改善OLED显示面板的左右亮度变暗现象并提高良率。
根据本公开的第一方面，提供了一种掩膜板，包括具有多个相互隔开且并行排列的图形掩膜块的图形掩膜层，和具有多个相互隔开且并行排列的覆盖掩膜块的覆盖掩膜层，所述覆盖掩膜块覆盖相邻的图形掩膜块之间的间隙，所述图形掩膜块包括有效区、非有效区以及位于有效区和非有效区之间的裕量区，所述有效区、非有效区和裕量区均具有多个像素成形开口，并且所述覆盖掩膜块还覆盖相邻的图形掩膜块的非有效区的像素成形开口。
根据上述配置，由于图形掩膜块的非有效区和裕量区具有多个像素成形开口，所以一方面，在图形掩膜块的制作过程中，有效区的边缘与内部被蚀刻的程度变得更均匀，从而使蒸镀角变得更均匀，而且另一方面，在蒸镀有机材料的过程中，有效区的边缘与内部的磁力分布变得更均匀，从而使蒸镀得到的有机材料层的厚度变得更均匀，进而改善显示面板的左右亮度变暗现象并提高良率。此外，由于覆盖掩膜块还覆盖相邻的图形掩膜块的非有效区的像素成形开口，所以能够避免将有机材料蒸镀到不期望设置有机材料层的区域。
根据本公开的第二方面，所述有效区的多个像素成形开口以多个相互隔开的像素成形区的形式布置；并且所述掩膜板还包括具有多个相互隔开且并行排列的支撑掩膜块的支撑掩膜层，所述支撑掩膜块与所述图形掩膜块的长度方向垂直排列、且位置对应于相邻的像素成形区之间的间隙。
根据上述配置，由于支撑掩膜块对图形掩膜块的支撑，能够减少图形掩膜层的下垂。此外，由于支撑掩膜块的位置对应于相邻的像素成形区之间的间隙，所以支撑掩膜块不会对有机材料的蒸镀造成影响。
根据本公开的第三方面，所述裕量区具有1列或2列像素成形开口。
根据本公开的第四方面，所述覆盖掩膜块或图形掩膜块具有至少一个定位开口，或者所述覆盖掩膜块和图形掩膜块各自具有至少一个定位开口。
根据上述配置，由于覆盖掩膜块具有至少一个定位开口，所以在制造掩膜板的过程中，能够利用母板上的相应定位图案将覆盖掩膜块准确地定位成覆盖相邻的图形掩膜块的非有效区的像素成形开口。由于设有所述至少一个定位开口的部分可以在掩膜板制造完成后切除，所以该特征是本公开的作为成品的掩膜板的可选特征。
根据本公开的第五方面，所述非有效区和裕量区的像素成形开口具有与所述有效区的像素成形开口相同的结构、尺寸和排列形式。
根据上述配置，由于非有效区和裕量区的像素成形开口具有与有效区的像素成形开口相同的结构、尺寸和排列形式，所以能够获得更均匀的蒸镀角和磁力分布，从而更好地改善显示面板的左右亮度变暗现象并提高良率。
根据本公开的第六方面，所述掩膜板还包括掩膜板框架，所述图形掩膜层和覆盖掩膜层设置在所述掩膜板框架上。
根据本公开的第七方面，所述掩膜板还包括掩膜板框架，所述图形掩膜层、覆盖掩膜层和支撑掩膜层设置在所述掩膜板框架上。
根据本公开的第八方面，提供了一种母板，用于在制造根据上述第一方面所述的掩膜板的过程中进行定位，其中在所述母板上设置有下述中的至少一个：针对每个图形掩膜块设置的至少一个用于定位该图形掩膜块的第一定位图案；和针对每个覆盖掩膜块设置的至少一个第二定位图案，用于将该覆盖掩膜块定位成覆盖相邻的图形掩膜块的非有效区的像素成形开口。
根据上述配置，由于在母板上设有第一定位图案和第二定位图案，所以在制造掩膜板的过程中，能够准确地定位图形掩膜块和覆盖掩膜块。
根据本公开的第九方面，至少一个第一定位图案或至少一个第二定位图案包括相互隔开的至少两个点状图案，用于与图形掩膜块或覆盖掩膜块中的相应的至少两个孔对准。
根据本公开的第十方面，提供了一种掩膜板制造设备，用于制造根据上述第六方面所述的掩膜板，包括：根据上述第八或第九方面所述的母板，用于对所述覆盖掩膜层和图形掩膜层进行定位；基台，用于支撑所述母板和掩膜板框架；张网机，用于对所述覆盖掩膜层和图形掩膜层执行拉伸处理；以及焊接机，用于分别将经定位且拉伸的覆盖掩膜层和图形掩膜层焊接到所述掩膜板框架上。
根据本公开的第十一方面，提供了一种显示基板蒸镀系统，包括蒸镀机，还包括根据上述第一至第七方面中任一方面所述的掩膜板。
根据上述配置，由于采用了上述第一至第七方面中任一方面所述的掩膜板，所以蒸镀得到的有机材料层的厚度变得更均匀，从而能够改善显示面板的左右亮度变暗现象并提高良率。
根据本公开的第十二方面，提供了一种掩膜板制造方法，用于制造根据上述第六发明所述的掩膜板，包括：使用根据上述第八或第九发明所述的母板，对所述覆盖掩膜层和图形掩膜层进行定位；使用张网机对所述覆盖掩膜层和图形掩膜层执行拉伸处理；以及使用焊接机分别将经定位且拉伸的覆盖掩膜层和图形掩膜层焊接到所述掩膜板框架上。
附图说明
为了更清楚地说明本公开的实施例的技术方案，下面将对实施例的附图作简单地介绍。明显地，以下附图中的结构示意图不一定按比例绘制，而是以简化形式呈现各特征。而且，下面描述中的附图仅仅涉及本公开的一些实施例，而并非对本公开进行限制。
图1是可以在其中应用本公开的实施例的掩膜板的结构示意图；
图2是现有技术的图形掩膜块和覆盖掩膜块的结构示意图；
图3是根据本公开的实施例的图形掩膜块的结构示意图；
图4是根据本公开的实施例的图形掩膜块和覆盖掩膜块的结构示意图；
图5是根据本公开的实施例的母板的结构示意图；以及
图6是根据本公开的实施例的掩膜板制造设备的结构示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
目前，在OLED显示面板中，由于利用现有的掩膜板蒸镀得到的有机材料层的厚度不均匀，会出现面板左右亮度变暗的现象，从而降低面板良率。
本公开的实施例提供了一种掩膜板、母板、掩膜板制造设备和方法及显示基板蒸镀系统，其能够改善OLED显示面板的左右亮度变暗现象并提高良率。此外，本公开的原理可以应用于AM型显示面板，也可以应用于PM型显示面板。在下文中，将以相应的实施例对本公开的掩膜板、母板、掩膜板制造设备和方法及显示基板蒸镀系统进行具体说明。
I.掩膜板
图1是可以在其中应用本公开的实施例的掩膜板的结构示意图。如图1所示，掩膜板100包括掩膜板框架102，以及固定(例如，焊接)在掩膜板框架102上的图形掩膜层104、覆盖掩膜层106和支撑掩膜层108。掩膜板框架102用于充当支撑框架，并且可以用金属材料(例如不锈钢)制成。图形掩膜层104用于在基板(例如，在AM型面板中为TFT基板)上蒸镀有机材料以形成显示像素，并且可以用金属材料(例如不锈钢)制成。 图形掩膜层104具有多个相互隔开且并行排列的图形掩膜块104-1、104-2、…、104-10。尽管图中示出10个图形掩膜块，但是这仅是示例性的示例。图形掩膜块的数量可以取决于实际的应用情况而取任何适当的数值。每个图形掩膜块可以具有多个像素成形区(参见图5)，且每个像素成形区可以具有多个像素成形开口。
由于在相邻的图形掩膜块之间以及在最外侧的图形掩膜块与掩膜板框架之间存在着间隙(参见图5)，如果不加处理，将会把有机材料蒸镀到基板上。为此，覆盖掩膜层106具有多个相互隔开且并行排列的覆盖掩膜块106-0、106-1、…、106-10，用于覆盖所述间隙。与图形掩膜块类似，覆盖掩膜块的数量可以取决于实际的应用情况而取任何适当的数值。覆盖掩膜层106可以用金属材料(例如不锈钢)制成。
此外，由于图形掩膜层的长度可能较长(例如，在G5.5产线中使用的掩膜板的情况下)，所以会出现图形掩膜层下垂的现象。为此，支撑掩膜层108具有多个相互隔开且并行排列的支撑掩膜块108-1、108-2、…、108-6，其中支撑掩膜块与图形掩膜块的长度方向垂直排列、且位置对应于相邻的像素成形区之间的间隙。相邻的两个支撑掩膜块之间的间隙可以对应于一个像素成形区，也可以对应于多于一个像素成形区。这样，一方面，由于支撑掩膜块的支撑作用，能够减少图形掩膜层的下垂，而且另一方面，由于支撑掩膜块的位置对应于相邻的像素成形区之间的间隙，所以支撑掩膜块不会对有机材料的蒸镀造成影响。与图形掩膜块类似，支撑掩膜块的数量可以取决于实际的应用情况而取任何适当的数值。支撑掩膜层108可以用金属材料(例如不锈钢)制成。此外，用于形成上述掩膜板框架102、图形掩膜层104、覆盖掩膜层106和支撑掩膜层108的金属材料可以彼此相同或不同。
在图1所示的示例中，掩膜板包括掩膜板框架，在这种情况下通常被称为上面提到的MFA。然而，应注意的是，可以在其中应用本公开的实施例的掩膜板的结构并不限于图1所示的示例。作为另一示例，掩膜板可以仅包括图形掩膜层和覆盖掩膜层，且图形掩膜层和覆盖掩膜层可以通过焊 接等任何适当的方式固定在一起。作为又一示例，掩膜板可以仅包括图形掩膜层、覆盖掩膜层和支撑掩膜层，且图形掩膜层、覆盖掩膜层和支撑掩膜层可以通过焊接等任何适当的方式固定在一起。
图2是现有技术的图形掩膜块和覆盖掩膜块的结构示意图。如图2所示，现有技术的图形掩膜块包括具有多个像素成形开口的有效区，其中所述多个像素成形开口可以以上面提到的多个相互隔开的像素成形区的形式布置。尽管图中未示出，但是现有技术的图形掩膜块也可在有效区的边缘外侧具有虚设的像素成形开口。由于当虚设开口的数量较大时，会将有机材料蒸镀到基板上的有效区外，所以现有技术的虚设开口的数量非常小(通常为1列或2列像素成形开口)。此外，如图2所示，现有技术的覆盖掩膜块仅覆盖相邻的图形掩膜块之间的间隙。
用现有技术的掩膜板蒸镀得到的显示面板会出现左右亮度变暗的现象。造成该现象的原因主要有两个。一个原因是在目前窄边框的情况下，图形掩膜层的虚设开口的数量很少，图形掩膜层在蒸镀过程中由于像素成形开口与原材料交接处应力分布不均匀，有效区与原材料区磁力差异过大而导致图形掩膜层边缘吸附程度大，所以产生蒸镀的阴影(shadow)。第二个原因是图形掩膜层的虚设开口的数量很少，在图形掩膜层制作过程中由于刻蚀液是从有效区边缘往里边流动的，使边缘区域的刻蚀程度与内部不同，有效区边缘被刻蚀掉的材料比有效区中心处多，使蒸镀角减小，从而也会导致蒸镀的阴影增大，最终导致蒸镀在显示面板左右两侧的有机材料厚度比中间薄，所以面板左右两侧亮度发暗。
图3是根据本公开的实施例的图形掩膜块的结构示意图。如图3所示，图形掩膜块300包括有效区302、非有效区306以及位于有效区302和非有效区306之间的裕量区304。如前所述，有效区302具有多个像素成形开口，其中所述多个像素成形开口可以以上面提到的多个相互隔开的像素成形区的形式布置。裕量区304和非有效区306均具有多个像素成形开口。由于要避免将有机材料蒸镀到基板的有效区外，所以裕量区304和非有效区306中的像素成形开口是虚设开口。裕量区304中的像素成形开口的数 量以不会对蒸镀得到的基板的有效区的外部造成影响(例如，影响该外部区域的导电特性)为限，并且通常为1列或2列像素成形开口。非有效区306中的像素成形开口会对蒸镀得到的基板的有效区的外部造成影响，并且其数量可以根据蒸镀得到的显示面板的显示性能的改善情况来确定(例如，其数量可以是数列至数十列像素成形开口)。应注意的是，在图3所示的示例中，像素成形开口是狭缝(slot)型的全刻蚀(full etch)开口。然而，本公开并不限于该示例，像素成形开口也可以取决于实际的应用情况而采取任何其他适合的形式。
图形掩膜块300可以利用任何现有的用于形成FMM的技术来制作。例如，可以通过依次执行涂光刻胶、使用光刻用掩膜板进行曝光、用显影液进行显影、用刻蚀液进行刻蚀、和剥离光刻胶，来制作图形掩膜块300。
在图3所示的示例中，非有效区306和裕量区304的像素成形开口具有与有效区302的像素成形开口相同的结构、尺寸和排列形式。然而，本公开并不限于图3所示的示例。作为另一示例，非有效区306和裕量区304的像素成形开口也可以具有与有效区302的像素成形开口不同的结构、尺寸和排列形式，而且非有效区306和裕量区304的像素成形开口的结构、尺寸和排列形式可以彼此相同或不同。
这样，一方面，在图形掩膜块的制作过程中，有效区的边缘与内部被蚀刻的程度变得更均匀，从而使蒸镀角变得更均匀，而且另一方面，在蒸镀有机材料的过程中，有效区的边缘与内部的磁力分布变得更均匀，从而使蒸镀得到的有机材料层的厚度变得更均匀，进而改善显示面板的左右亮度变暗现象并提高良率。
图4是根据本公开的实施例的图形掩膜块和覆盖掩膜块的结构示意图。如上所述，非有效区306中的像素成形开口会对蒸镀得到的基板的有效区的外部造成影响，所以如图4所示，覆盖掩膜块覆盖相邻的图形掩膜块的非有效区的像素成形开口。由于裕量区中的像素成形开口不会对蒸镀得到的基板的有效区的外部造成影响，所以覆盖掩膜块无需覆盖裕量区。而且，留出裕量区也可以防止覆盖掩膜块(由于例如处理工艺精度的原因) 盖住有效区而影响有机材料的蒸镀。
如上所述，现有技术的覆盖掩膜块仅覆盖相邻的两个图形掩膜块之间的间隙，所以对覆盖掩膜块的位置精度要求不高。然而，图4所示的覆盖掩膜块要遮挡非有效区的像素成形开口，这对覆盖掩膜块的位置精度要求较高。因此，如图4所示，覆盖掩膜块还具有相互隔开的两个定位孔，用于与定位用的母板例如母玻璃板(mother glass)上的相应的定位图案对准，从而将覆盖掩膜块准确地定位成覆盖非有效区的像素成形开口。此外，由于需要在覆盖掩膜块与图形掩膜块之间进行准确定位，所以图形掩膜块也具有相互隔开的两个定位孔，用于与定位用的母板上的相应的定位图案对准(参见图5)。
应注意的是，本公开并不限于图4所示的示例。作为另一示例，覆盖掩膜块和图形掩膜块可以各自仅具有一个呈长条状的定位开口。相应地，定位用的母板可以具有相应的长条状的定位图案，用于与所述定位开口对准。也就是说，覆盖掩膜块和图形掩膜块均具有至少一个定位开口即可。此外，由于覆盖掩膜块和图形掩膜块中设有定位开口的部分可以在掩膜块制造完成之后切除，所以所述定位开口是作为成品的掩膜板的可选特征。
如前所述，可以在其中应用本公开的实施例的掩膜板的结构并不限于图1所示的示例。作为另一示例，掩膜板可以仅包括图形掩膜层和覆盖掩膜层，且图形掩膜层和覆盖掩膜层可以通过焊接等任何适当的方式固定在一起。也就是说，本公开的第一实施例提供了一种掩膜板，其包括具有多个相互隔开且并行排列的图形掩膜块的图形掩膜层，和具有多个相互隔开且并行排列的覆盖掩膜块的覆盖掩膜层，所述覆盖掩膜块覆盖相邻的图形掩膜块之间的间隙，其中所述图形掩膜块包括有效区、非有效区以及位于有效区和非有效区之间的裕量区，所述有效区、非有效区和裕量区均具有多个像素成形开口，并且所述覆盖掩膜块还覆盖相邻的图形掩膜块的非有效区的像素成形开口。
如前所述，作为又一示例，掩膜板可以仅包括图形掩膜层、覆盖掩膜层和支撑掩膜层，且图形掩膜层、覆盖掩膜层和支撑掩膜层可以通过焊接 等任何适当的方式固定在一起。也就是说，本公开的第二实施例提供了一种掩膜板，其包括具有多个相互隔开且并行排列的图形掩膜块的图形掩膜层，和具有多个相互隔开且并行排列的覆盖掩膜块的覆盖掩膜层，所述覆盖掩膜块覆盖相邻的图形掩膜块之间的间隙，其中所述图形掩膜块包括有效区、非有效区以及位于有效区和非有效区之间的裕量区，所述有效区、非有效区和裕量区均具有多个像素成形开口，并且所述覆盖掩膜块还覆盖相邻的图形掩膜块的非有效区的像素成形开口；其中所述有效区的多个像素成形开口以多个相互隔开的像素成形区的形式布置；并且所述掩膜板还包括具有多个相互隔开且并行排列的支撑掩膜块的支撑掩膜层，所述支撑掩膜块与所述图形掩膜块的长度方向垂直排列、且位置对应于相邻的像素成形区之间的间隙。
此外，如前面针对图1所述，掩膜板可以包括掩膜板框架。也就是说，本公开的第三实施例提供了一种掩膜板，其与第一实施例的掩膜板的区别在于，还包括掩膜板框架，所述图形掩膜层和覆盖掩膜层设置在所述掩膜板框架上。而且，本公开的第四实施例提供了一种掩膜板，其与第二实施例的掩膜板的区别在于，还包括掩膜板框架，所述图形掩膜层、覆盖掩膜层和支撑掩膜层设置在所述掩膜板框架上。
II.母板
图5是根据本公开的实施例的母板的结构示意图。如图5所示，在母板500上，针对每个图形掩膜块设置有相互隔开的两个圆点502-1、502-2，用于与该图形掩膜块中的两个孔对准从而进行定位。此外，在母板500上，针对每个覆盖掩膜块设置有相互隔开的两个圆点504-1、504-2，用于与该覆盖掩膜块中的两个孔对准，从而将该覆盖掩膜块定位成覆盖图形掩膜块的非有效区的像素成形开口。定位图案502-1、502-2、504-1、504-2可以通过使用任何现有的沉积工艺将例如金属材料沉积到母玻璃板上的预定位置来实现。
同理，本公开并不限于图5所示的示例。作为另一示例，定位图案的形状不限于圆点，也可以是方形、三角形等其他适合的形状。作为又一示 例，母板可以针对每个图形掩膜块仅具有一个呈长条状的定位图案，用于与图案覆盖掩膜块中的相应的长条状定位开口对准。作为再一示例，母板可以针对每个覆盖掩膜块仅具有一个呈长条状的定位图案，用于与覆盖掩膜块中的相应的长条状定位开口对准。也就是说，母板可以针对每个图形掩膜块具有至少一个第一定位图案，且针对每个覆盖掩膜块具有至少一个第二定位图案。
由于母板可以针对每个图形掩膜块具有至少一个第一定位图案，且针对每个覆盖掩膜块具有至少一个第二定位图案，所以本公开的第五实施例提供了一种母板，其至少可以用于在制造前述第一实施例的掩膜板的过程中进行定位，其中在所述母板上针对每个图形掩膜块设置有至少一个用于定位该图形掩膜块的第一定位图案；并且在所述母板上针对每个覆盖掩膜块设置有至少一个第二定位图案，用于将该覆盖掩膜块定位成覆盖相邻的图形掩膜块的非有效区的像素成形开口。
III.掩膜板制造设备和方法
图6是根据本公开的实施例的掩膜板制造设备的结构示意图。如图6所示，掩膜板制造设备600包括基台602、母板604、张网机606和焊接机608。基台602用于支撑母板604和掩膜板框架610。母板604用于对覆盖掩膜层和图形掩膜层进行定位，且已经参考图5进行了详细描述，在此不再赘述。张网机606用于对覆盖掩膜层612和图形掩膜层614执行拉伸处理。焊接机608用于分别将经定位且拉伸的覆盖掩膜层612和图形掩膜层614焊接到掩膜板框架610上，并且可以采用例如激光焊接机来实现。也就是说，除母板604外，基台602、张网机606和焊接机608可以采用与现有的掩膜板制造设备中对应工艺或功能相同的设备或部件，在此不再赘述。覆盖掩膜层612和图形掩膜层614的焊接顺序可以是先焊接覆盖掩膜层612、再焊接图形掩膜层614，也可以是相反的焊接顺序。应注意的是，尽管在图6中将掩膜板框架610示为放置在母板604之上，但是掩膜板框架610和母板604也可以以其他适合的方式布置(例如，掩膜板框架610可以环绕母板604而与母板604处于同一平面中)，只要能够实现定位即可。
也就是说，本公开的第六实施例提供了一种掩膜板制造设备，其至少可以用于制造前述第三实施例的掩膜板，并且包括：前述第五实施例的母板，用于对所述覆盖掩膜层和图形掩膜层进行定位；基台，用于支撑所述母板和掩膜板框架；张网机，用于对所述覆盖掩膜层和图形掩膜层执行拉伸处理；以及焊接机，用于分别将经定位且拉伸的覆盖掩膜层和图形掩膜层焊接到所述掩膜板框架上。
可选地，张网机606还可以对上面描述的支撑掩膜层执行拉伸处理，并且焊接机608还可以将经拉伸的支撑掩膜层焊接到掩膜板框架610上。覆盖掩膜层、支撑掩膜层和图形掩膜层的焊接顺序可以是先焊接覆盖掩膜层、再焊接支撑掩膜层、再焊接图形掩膜层，也可以采取任何其他适合的焊接顺序。
因此，本公开还提供了一种掩膜板制造方法，其至少可以用于制造前述第三实施例的掩膜板，并且包括：使用前述第五实施例的母板，对所述覆盖掩膜层和图形掩膜层进行定位；使用张网机对所述覆盖掩膜层和图形掩膜层执行拉伸处理；以及使用焊接机分别将经定位且拉伸的覆盖掩膜层和图形掩膜层焊接到所述掩膜板框架上。
IV.显示基板蒸镀系统
根据本公开的实施例的显示基板蒸镀系统包括：蒸镀机；以及上面在第I节中描述的根据本公开的各实施例的掩膜板，用于在基板上形成像素图形，通常基板上排列有至少一个显示屏区。除掩膜板外，该显示基板蒸镀系统的其他组成设备或部件可以采用与现有的蒸镀系统中对应工艺或功能相同的设备或部件，在此不再赘述。
由于采用了上面在第I节中描述的根据本公开的实施例的掩膜板，所以利用该显示基板蒸镀系统蒸镀得到的显示基板的有机材料层的厚度变得更均匀，从而能够改善显示面板的左右亮度变暗现象并提高良率。
应注意的是，以上所述仅是本公开的示范性实施方式，而并非用于限制本公开的保护范围，本公开的保护范围由所附的权利要求确定。

Claims (12)

  1. 一种掩膜板，包括具有多个相互隔开且并行排列的图形掩膜块的图形掩膜层，和具有多个相互隔开且并行排列的覆盖掩膜块的覆盖掩膜层，所述覆盖掩膜块覆盖相邻的图形掩膜块之间的间隙，
    其中所述图形掩膜块包括有效区、非有效区以及位于有效区和非有效区之间的裕量区，所述有效区、非有效区和裕量区均具有多个像素成形开口，并且所述覆盖掩膜块还覆盖相邻的图形掩膜块的非有效区的像素成形开口。
  2. 根据权利要求1所述的掩膜板，其中，所述有效区的多个像素成形开口以多个相互隔开的像素成形区的形式布置；以及
    所述掩膜板还包括具有多个相互隔开且并行排列的支撑掩膜块的支撑掩膜层，所述支撑掩膜块与所述图形掩膜块的长度方向垂直排列、且位置对应于相邻的像素成形区之间的间隙。
  3. 根据权利要求1或2所述的掩膜板，其中，所述裕量区具有1列或2列像素成形开口。
  4. 根据权利要求1至3中任一项所述的掩膜板，其中，所述覆盖掩膜块或图形掩膜块具有至少一个定位开口，或者所述覆盖掩膜块和图形掩膜块各自具有至少一个定位开口。
  5. 根据权利要求1至4中任一项所述的掩膜板，其中，所述非有效区和裕量区的像素成形开口具有与所述有效区的像素成形开口相同的结构、尺寸和排列形式。
  6. 根据权利要求1所述的掩膜板，还包括掩膜板框架，所述图形掩膜层和覆盖掩膜层设置在所述掩膜板框架上。
  7. 根据权利要求2所述的掩膜板，还包括掩膜板框架，所述图形掩膜层、覆盖掩膜层和支撑掩膜层设置在所述掩膜板框架上。
  8. 一种母板，用于在制造根据权利要求1所述的掩膜板的过程中进行定位，其中在所述母板上设置有下述中的至少一个：
    针对每个图形掩膜块设置的至少一个用于定位该图形掩膜块的第一 定位图案；和
    针对每个覆盖掩膜块设置的至少一个第二定位图案，用于将该覆盖掩膜块定位成覆盖相邻的图形掩膜块的非有效区的像素成形开口。
  9. 根据权利要求8所述的母板，其中，至少一个第一定位图案或至少一个第二定位图案包括相互隔开的至少两个点状图案，用于与图形掩膜块或覆盖掩膜块中的相应的至少两个孔对准。
  10. 一种掩膜板制造设备，用于制造根据权利要求6所述的掩膜板，包括：
    根据权利要求8或9所述的母板，用于对所述覆盖掩膜层和图形掩膜层进行定位；
    基台，用于支撑所述母板和掩膜板框架；
    张网机，用于对所述覆盖掩膜层和图形掩膜层执行拉伸处理；以及
    焊接机，用于分别将经定位且拉伸的覆盖掩膜层和图形掩膜层焊接到所述掩膜板框架上。
  11. 一种显示基板蒸镀系统，包括蒸镀机，以及根据权利要求1至7中任一项所述的掩膜板。
  12. 一种掩膜板制造方法，用于制造根据权利要求6所述的掩膜板，包括：
    使用根据权利要求8或9所述的母板，对所述覆盖掩膜层和图形掩膜层进行定位；
    使用张网机对所述覆盖掩膜层和图形掩膜层执行拉伸处理；以及
    使用焊接机分别将经定位且拉伸的覆盖掩膜层和图形掩膜层焊接到所述掩膜板框架上。
PCT/CN2017/072223 2016-05-05 2017-01-23 掩膜板、母板、掩膜板制造设备和方法及显示基板蒸镀系统 Ceased WO2017190537A1 (zh)

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