WO2017181463A1 - 阵列基板及其制造方法、液晶显示器 - Google Patents

阵列基板及其制造方法、液晶显示器 Download PDF

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WO2017181463A1
WO2017181463A1 PCT/CN2016/082305 CN2016082305W WO2017181463A1 WO 2017181463 A1 WO2017181463 A1 WO 2017181463A1 CN 2016082305 W CN2016082305 W CN 2016082305W WO 2017181463 A1 WO2017181463 A1 WO 2017181463A1
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Prior art keywords
layer
substrate
color film
film layer
reflective layer
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French (fr)
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徐向阳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular to an array substrate, a method of manufacturing the same, and a liquid crystal display.
  • Liquid crystal display (Liquid Crystal Display, LCD), according to the type of light source used and the way the light source is set, can be divided into a transmissive liquid crystal display, a semi-transmissive liquid crystal display, and a reflective liquid crystal display.
  • a reflective liquid crystal display In the case of a reflective liquid crystal display, it displays a picture by reflecting ambient light or reflecting light emitted from a light source disposed in front of the display panel. Due to the limitation of the incident direction of the ambient light or the front light source, the display angle of view of the existing reflective liquid crystal display panel is too small, and the brightness is not uniform enough.
  • the technical problem to be solved by the present invention is to provide an array substrate, a manufacturing method thereof, and a liquid crystal display, which can enlarge the viewing angle of the display and increase the brightness of the display.
  • a technical solution adopted by the present invention is to provide an array substrate including a substrate substrate and a reflective layer and a color film layer sequentially formed on the substrate substrate; wherein, the color film layer The thickness decreases from the middle of the color film layer to the edge of the color film layer.
  • one side of the color film layer adjacent to the reflective layer is a plane, and one side facing away from the reflective layer is a curved surface.
  • the color film layer is a red photoresist layer, a green photoresist layer or a blue photoresist layer.
  • the method further includes a thin film transistor disposed on a side of the reflective layer adjacent to the substrate, and a pixel electrode, an insulating layer, and a common electrode disposed on the side of the color film layer away from the substrate.
  • the thin film transistor includes a gate electrode, a gate insulating layer, and a source/drain layer sequentially formed on the base substrate; wherein the source and drain layers include low temperature polysilicon and source and drain electrodes respectively formed by doping on both sides of the low temperature polysilicon .
  • the reflective layer is a metal reflective layer, and the metal reflective layer is connected to the drain; the metal reflective layer is connected to the pixel electrode through a through hole in the color film layer.
  • another technical solution adopted by the present invention is to provide a method for manufacturing an array substrate, the method comprising: providing a substrate; forming a reflective layer and a color film layer sequentially on the substrate; The color film layer is etched such that the thickness in the middle of the color film layer is greater than the thickness of the edge.
  • the color film layer is made of negative photoresist; the color film layer is etched so that the thickness of the middle of the color film layer is greater than the thickness of the edge layer, including: shielding the color film layer with a light shielding plate; wherein the light shielding plate is transparent The light rate decreases from the middle of the visor to the edge of the visor; the color film layer is exposed; the color film layer is developed to reduce the thickness of the color film layer from the middle of the color film layer to the edge of the color film layer .
  • the method further includes: forming a thin film transistor on the substrate; and etching the color film layer so that the thickness of the middle of the color film layer is greater than the thickness of the edge.
  • the method further includes sequentially forming a pixel electrode, an insulating layer, and a common electrode on the color film layer.
  • a liquid crystal display including an array substrate, an upper substrate, and a liquid crystal layer between the array substrate and the upper substrate; wherein the array substrate includes a substrate a substrate and a reflective layer and a color filter layer sequentially formed on the base substrate; wherein the thickness of the color filter layer decreases from the middle of the color filter layer to the edge of the color filter layer.
  • one side of the color film layer adjacent to the reflective layer is a plane, and one side facing away from the reflective layer is a curved surface.
  • the color film layer is a red photoresist layer, a green photoresist layer or a blue photoresist layer.
  • the method further includes a thin film transistor disposed on a side of the reflective layer adjacent to the substrate, and a pixel electrode, an insulating layer, and a common electrode disposed on the side of the color film layer away from the substrate.
  • the thin film transistor includes a gate electrode, a gate insulating layer, and a source/drain layer sequentially formed on the base substrate; wherein the source and drain layers include low temperature polysilicon and source and drain electrodes respectively formed by doping on both sides of the low temperature polysilicon .
  • the reflective layer is a metal reflective layer, and the metal reflective layer is connected to the drain; the metal reflective layer is connected to the pixel electrode through a through hole in the color film layer.
  • the liquid crystal display further includes: a polarizer disposed on a side of the upper substrate away from the liquid crystal layer.
  • the array substrate of the present invention comprises a substrate substrate and a reflective layer and a color film layer sequentially formed on the substrate substrate; wherein the thickness of the color film layer is from the color film.
  • the middle of the layer is reduced toward the edge of the color film layer.
  • the color film layer adopts a structure with a thick intermediate edge and a thin edge to form an approximate plano-convex mirror, which has a diverging effect on the reflected light formed by the reflection of the incident optical fiber, thereby enlarging the exit angle of the light, thereby expanding the viewing angle of the display. , increase the brightness of the display.
  • FIG. 1 is a schematic structural view of a first embodiment of an array substrate of the present invention
  • FIG. 2 is a schematic view of an optical path of a first embodiment of the array substrate of the present invention
  • FIG. 3 is a schematic structural view of a second embodiment of the array substrate of the present invention.
  • FIG. 4 is a schematic flow chart of an embodiment of a method for fabricating an array substrate of the present invention.
  • FIG. 5 is a schematic view showing the fabrication of a color film layer in an embodiment of the method for fabricating an array substrate of the present invention
  • Fig. 6 is a schematic structural view of an embodiment of a liquid crystal display of the present invention.
  • a schematic structural view of a first embodiment of an array substrate of the present invention includes a substrate substrate 11 and a reflective layer 12 and a color film layer 13 sequentially formed on the substrate substrate 11 .
  • the base substrate 11 is generally a transparent glass substrate.
  • the thickness of the color film layer 13 decreases from the middle of the color film layer 13 to the edge of the color film layer 13.
  • one side of the color film layer 13 adjacent to the reflective layer 12 is a flat surface, and one side facing away from the reflective layer 12 is a curved surface.
  • the color film layer 13 is a red photoresist layer, a green photoresist layer or a blue photoresist layer. It can be understood that FIG. 1 is only a cross-sectional view of one pixel of the array substrate, wherein the color film layer 13 has only one color, and the adjacent pixel points have different colors on the entire array substrate, for example, may be red, The green and blue colors are alternately arranged in an array.
  • the downward arrow indicates incident light
  • the upward arrow indicates outgoing light
  • one side of the color film layer 13 near the reflective layer 12 is a flat surface, and one side facing away from the reflective layer 12 is a curved surface. That is, a part of the color film layer 13 is a structure similar to a plano-convex mirror, and the plano-convex mirror can concentrate the light, and when the incident light is irradiated onto the color film layer 13, the light is emitted after being reflected by the color film layer 13 and reflected by the reflective layer 12. The angle is enlarged.
  • the array substrate of the present embodiment includes a base substrate and a reflective layer and a color film layer sequentially formed on the base substrate; wherein the thickness of the color film layer is from the middle of the color film layer to the color film layer. The edge is reduced.
  • the color film layer adopts a structure with a thick intermediate edge and a thin edge to form an approximate plano-convex mirror, which has a diverging effect on the reflected light formed by the reflection of the incident optical fiber, thereby enlarging the exit angle of the light, thereby expanding the viewing angle of the display. , increase the brightness of the display.
  • the array substrate includes a substrate substrate 31, a thin film transistor 32 sequentially formed on the substrate substrate 31, a reflective layer 33, a color film layer 34, and a pixel electrode. 35, an insulating layer 36 and a common electrode 37.
  • the thin film transistor 32 includes a gate electrode 321 , a gate insulating layer 322 , and a source/drain layer sequentially formed on the substrate substrate 31 .
  • the source and drain layers include low temperature polysilicon 323 and doped on both sides of the low temperature polysilicon 323. Source 324 and drain 325.
  • low temperature polysilicon 323 is formed on the gate insulating layer 322, and both sides of the low temperature polysilicon 323 are heavily doped, and then a layer of metal is formed on the low temperature polysilicon 323, and the metal is patterned to respectively A source 324, a drain 325, and a reflective layer 33 are formed. The drain 325 and the reflective layer 33 are connected, and the source 324 and the drain 325 are respectively connected to the heavily doped sides of the low temperature polysilicon 323.
  • the metal reflective layer 33 is connected to the pixel electrode 35 through a through hole 341 in the color filter layer 34.
  • the data line connected to the source 324 passes the data signal through the source 324 and the drain 325.
  • the reflective layer 33 is transferred to the pixel electrode 35 to form a pressure difference between the pixel electrode 35 and the common electrode 37 to deflect the liquid crystal molecules, thereby controlling the display of the image.
  • the common electrode 37 may not be disposed on the array substrate, but disposed on the upper substrate, and the liquid crystal molecules are located between the upper substrate and the array substrate.
  • the thin film transistor 32 may also be of a top gate type, and the doping manner thereof may also be replaced.
  • FIG. 4 is a schematic flow chart of an embodiment of a method for fabricating an array substrate according to the present invention. The method includes:
  • the base substrate is a transparent glass substrate.
  • the method of forming the reflective layer and the color filter layer on the base substrate may be by physical vapor deposition or chemical vapor deposition.
  • 51 is an array substrate
  • 52 is a color film layer, and is made of a negative photoresist, that is, a negative photoresist
  • 53 is a light shielding plate.
  • the light transmittance in the middle of the light shielding plate 53 is greater than the light transmittance of the edge.
  • the light transmittance can be changed by adjusting the thickness of each region of the light shielding plate 53, for example, hollowing in the middle, and then gradually thickening toward the edge.
  • the color filter layer 52 is blocked by the light shielding plate 53; wherein the light transmittance of the light shielding plate 53 is reduced from the middle of the light shielding plate 53 toward the edge of the light shielding plate 53; the color film layer 52 is exposed; and the color film layer 2 is developed.
  • the thickness of the color filter layer 52 is reduced from the middle of the color filter layer 52 toward the edge of the color filter layer 52.
  • the color film layer 52 is made of a negative photoresist, the exposed portion remains on the array substrate 51 after the development process, and the remaining portions are different in thickness depending on the degree of the explosion, so the thickness of the color film layer 52 is different. Decrease from the middle to the edge.
  • the method further includes: forming a thin film transistor on the base substrate.
  • the method further includes: sequentially forming a pixel electrode, an insulating layer, and a common electrode on the color film layer.
  • a schematic structural diagram of an embodiment of a liquid crystal display according to the present invention includes an array substrate 61, an upper substrate 62, and a liquid crystal layer 63 between the array substrate 61 and the upper substrate 62.
  • a polarizer 64 is further included on a side of the upper substrate 62 away from the liquid crystal layer 63.
  • the array substrate 61 includes a color film layer, and the thickness of the color film layer is reduced from the middle of the color film layer to the edge of the color film layer, so that the color film layer has a diverging effect on the emitted light, thereby expanding the viewing angle of the liquid crystal display.
  • the array substrate 61 is an array substrate as described in the above embodiments, and the embodiments are similar, and details are not described herein again.
  • the color film layer or the common electrode may also be disposed on the upper substrate.

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  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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Abstract

一种阵列基板及其制造方法、液晶显示器，该阵列基板包括衬底基板（11）以及依次形成于衬底基板（11）上的反射层（12）以及彩膜层（13）；其中，彩膜层（13）的厚度从彩膜层（13）的中间向彩膜层（13）的边缘减小。通过上述方式，能够扩大显示器的视角，增加显示器的亮度。

Description

阵列基板及其制造方法、液晶显示器
【技术领域】
本发明涉及液晶显示技术领域，特别是涉及阵列基板及其制造方法、液晶显示器。
【背景技术】
液晶显示器（Liquid Crystal Display，LCD），根据其所使用的光源的类型和光源的设置方式，可以分为透射式液晶显示器、半透射式液晶显示器和反射式液晶显示器。
就反射式液晶显示器而言，其通过反射环境光，或者反射设置于显示面板前方的光源发出的光线来显示画面。由于受限于环境光或前方光源的入射方向限制，现有反射式液晶显示面板的显示视角太小，且亮度不够均匀。
【发明内容】
本发明主要解决的技术问题是提供阵列基板及其制造方法、液晶显示器，能够扩大显示器的视角，增加显示器的亮度。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种阵列基板，该阵列基板包括衬底基板以及依次形成于衬底基板上的反射层以及彩膜层；其中，彩膜层的厚度从彩膜层的中间向彩膜层的边缘减小。
其中，彩膜层靠近反射层的一面为平面，背离反射层的一面为曲面。
其中，彩膜层为红色光阻层、绿色光阻层或蓝色光阻层。
其中，还包括设置在反射层靠近衬底基板一侧的薄膜晶体管以及依序设置在彩膜层远离衬底基板一侧的像素电极、绝缘层和公共电极。
其中，薄膜晶体管包括依次形成于衬底基板上的栅极、栅极绝缘层、源漏层；其中，源漏层包括低温多晶硅以及在低温多晶硅两侧经过掺杂分别形成的源极和漏极。
其中，反射层为金属反射层，金属反射层与漏极连接；金属反射层通过彩膜层上的通孔与像素电极连接。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种阵列基板的制造方法，该方法包括：提供一衬底基板；在衬底基板上依次形成反射层以及彩膜层；对彩膜层进行蚀刻，以使彩膜层中间的厚度大于边缘的厚度。
其中，彩膜层采用负性光刻胶制成；对彩膜层进行蚀刻，以使彩膜层中间的厚度大于边缘的厚度，包括：采用遮光板遮挡彩膜层；其中，遮光板的透光率从遮光板的中间向遮光板的边缘减小；对彩膜层进行曝光；对彩膜层进行显影，以使彩膜层的厚度从彩膜层的中间向彩膜层的边缘减小。
其中，在衬底基板上依次形成反射层以及彩膜层之前，还包括：在衬底基板上形成薄膜晶体管；对彩膜层进行蚀刻，以使彩膜层中间的厚度大于边缘的厚度之后，还包括：在彩膜层上依次形成像素电极、绝缘层以及公共电极。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种液晶显示器，该液晶显示器包括阵列基板、上基板以及阵列基板和上基板之间的液晶层；其中，阵列基板包括衬底基板以及依次形成于衬底基板上的反射层以及彩膜层；其中，彩膜层的厚度从彩膜层的中间向彩膜层的边缘减小。
其中，彩膜层靠近反射层的一面为平面，背离反射层的一面为曲面。
其中，彩膜层为红色光阻层、绿色光阻层或蓝色光阻层。
其中，还包括设置在反射层靠近衬底基板一侧的薄膜晶体管以及依序设置在彩膜层远离衬底基板一侧的像素电极、绝缘层和公共电极。
其中，薄膜晶体管包括依次形成于衬底基板上的栅极、栅极绝缘层、源漏层；其中，源漏层包括低温多晶硅以及在低温多晶硅两侧经过掺杂分别形成的源极和漏极。
其中，反射层为金属反射层，金属反射层与漏极连接；金属反射层通过彩膜层上的通孔与像素电极连接。
其中，该液晶显示器还包括：偏光片，设置在上基板远离液晶层的一侧。
本发明的有益效果是：区别于现有技术的情况，本发明的阵列基板包括衬底基板以及依次形成于衬底基板上的反射层以及彩膜层；其中，彩膜层的厚度从彩膜层的中间向彩膜层的边缘减小。通过上述方式，彩膜层采用中间厚、边缘薄的结构，形成近似的平凸镜，对入射光纤反射后形成的反射光具有发散作用，进而使光线的出射角被放大，扩大了显示器的视角，增加显示器的亮度。
【附图说明】
图1是本发明阵列基板第一实施方式的结构示意图；
图2是本发明阵列基板第一实施方式的光路示意图；
图3是本发明阵列基板第二实施方式的结构示意图；
图4是本发明阵列基板的制作方法一实施方式的流程示意图；
图5是本发明阵列基板的制作方法一实施方式中彩膜层的制作示意图；
图6是本发明液晶显示器一实施方式的结构示意图。
【具体实施方式】
参阅图1，本发明阵列基板第一实施方式的结构示意图，该阵列基板包括衬底基板11以及依次形成于衬底基板11上的反射层12以及彩膜层13。
其中，衬底基板11一般为透明的玻璃基板。
其中，彩膜层13的厚度从彩膜层13的中间向彩膜层13的边缘减小。
可选的，在本实施方式中，彩膜层13靠近反射层12的一面为平面，背离反射层12的一面为曲面。
可选的，彩膜层13为红色光阻层、绿色光阻层或蓝色光阻层。可以理解的，图1所示仅为阵列基板一个像素的截面图，其中的彩膜层13仅有一种颜色，在整个阵列基板上，相邻的像素点的颜色不同，例如，可以是红、绿、蓝三色交替阵列分布。
如图2所示，其中，向下的箭头表示入射光，向上的箭头表示出射光。
可以理解的，彩膜层13靠近反射层12的一面为平面，背离反射层12的一面为曲面。即彩膜层13的一部分为类似平凸镜的结构，平凸镜能够汇聚光线，当入射光线照射到彩膜层13后经过彩膜层13的折射和反射层12的反射后使光线的出射角度被放大。
区别于现有技术，本实施方式的阵列基板包括衬底基板以及依次形成于衬底基板上的反射层以及彩膜层；其中，彩膜层的厚度从彩膜层的中间向彩膜层的边缘减小。通过上述方式，彩膜层采用中间厚、边缘薄的结构，形成近似的平凸镜，对入射光纤反射后形成的反射光具有发散作用，进而使光线的出射角被放大，扩大了显示器的视角，增加显示器的亮度。
参阅图3，本发明阵列基板第二实施方式的结构示意图，该阵列基板包括衬底基板31以及依次形成于该衬底基板31上的薄膜晶体管32、反射层33、彩膜层34，像素电极35，绝缘层36以及公共电极37。
其中，薄膜晶体管32包括依次形成于衬底基板上31的栅极321、栅极绝缘层322、源漏层；其中，源漏层包括低温多晶硅323以及在低温多晶硅323两侧经过掺杂分别形成的源极324和漏极325。
具体地的，在栅极绝缘层322上形成低温多晶硅323，并对该低温多晶硅323的两侧进行重型掺杂，再在低温多晶硅323上形成一层金属，并对金属进行图形化，以分别形成源极324、漏极325以及反射层33。其中，漏极325和反射层33是连接的，源极324和漏极325分别连接低温多晶硅323上经过重型掺杂的两侧。
另外，金属反射层33通过彩膜层34上的通孔341与像素电极35连接。
在具体实现中，当连接栅极321的扫描信号使薄膜晶体管32导通时，即源极324和漏极325导通，连接源极324的数据线将数据信号通过源极324、漏极325、反射层33传递到像素电极35，以使像素电极35和公共电极37之间形成压差，使液晶分子发生偏转，从而控制图像的显示。
可选的，在其他实施方式中，公共电极37也可以不设置在阵列基板上，而是设置在上基板上，液晶分子位于上基本和阵列基板之间。
可选的，在其他实施方式中，薄膜晶体管32也可以是顶栅型的，其掺杂方式也可以进行替换。
可以理解的，本实施方式中对于除反射层33和彩膜层34之外的其他结构，均为举例，并不限制本发明的保护范围。
参阅图4，本发明阵列基板的制作方法一实施方式的流程示意图，该方法包括：
S41：提供一衬底基板。
可选的，衬底基板是透明的玻璃基板。
S42：在衬底基板上依次形成反射层以及彩膜层。
可选的，在衬底基板上形成反射层以及彩膜层的方法，可以是通过物理气相沉积或化学气相沉积的方式。
S43：对彩膜层进行蚀刻，以使彩膜层中间的厚度大于边缘的厚度。
如图5所示， 51为阵列基板，52为彩膜层，采用负性光阻，即负性光刻胶制成，53为遮光板。其中，遮光板53中间的透光性大于边缘的透光性。具体地，可以通过调节遮光板53各个区域的厚度来改变透光性，例如中间为镂空，然后往边缘逐渐加厚。
具体流程如下：
采用遮光板53遮挡彩膜层52；其中，遮光板53的透光率从遮光板53的中间向遮光板53的边缘减小；对彩膜层52进行曝光；对彩膜层2进行显影，以使彩膜层52的厚度从彩膜层52的中间向彩膜层52的边缘减小。
由于彩膜层52由负性光阻制成，因此通过显影工艺后，被曝光的部分留在阵列基板51上，其余部分根据爆分的程度不同，则厚度不同，所以彩膜层52的厚度从中间向边缘减少。
可选的，在S42之前，还可以包括：在衬底基板上形成薄膜晶体管。
可选的，在S43之后，还可以包括：在彩膜层上依次形成像素电极、绝缘层以及公共电极。
参阅图6，本发明液晶显示器一实施方式的结构示意图，该液晶显示器包括阵列基板61、上基板62以及阵列基板61和上基板62之间的液晶层63。
可选的，在上基板62远离液晶层63的一侧，还包括偏光片64。
其中，阵列基板61包括彩膜层，彩膜层的厚度从彩膜层的中间向彩膜层的边缘减小，以使彩膜层对出射光线具有发散作用，从而扩大液晶显示器的视角。
其中，阵列基板61是如上各个实施方式中所描述的的阵列基板，其实施方式类似，这里不再赘述。
可选的，在其他实施方式中，也可以将彩膜层或者公共电极设置在上基板上。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (18)

  1. 一种液晶显示器，其中，包括阵列基板、上基板以及所述阵列基板和所述上基板之间的液晶层；
    其中，所述阵列基板包括衬底基板以及依次形成于所述衬底基板上的反射层以及彩膜层；
    其中，所述彩膜层的厚度从所述彩膜层的中间向所述彩膜层的边缘减小。
  2. 根据权利要求1所述的液晶显示器，其中，所述彩膜层靠近所述反射层的一面为平面，背离所述反射层的一面为曲面。
  3. 根据权利要求1所述的液晶显示器，其中，所述彩膜层为红色光阻层、绿色光阻层或蓝色光阻层。
  4. 根据权利要求1所述的液晶显示器，其中，还包括设置在所述反射层靠近所述衬底基板一侧的薄膜晶体管以及依序设置在所述彩膜层远离所述衬底基板一侧的像素电极、绝缘层和公共电极。
  5. 根据权利要求2所述的液晶显示器，其中，还包括设置在所述反射层靠近所述衬底基板一侧的薄膜晶体管以及依序设置在所述彩膜层远离所述衬底基板一侧的像素电极、绝缘层和公共电极。
  6. 根据权利要求3所述的液晶显示器，其中，还包括设置在所述反射层靠近所述衬底基板一侧的薄膜晶体管以及依序设置在所述彩膜层远离所述衬底基板一侧的像素电极、绝缘层和公共电极。
  7. 根据权利要求4所述的液晶显示器，其中，所述薄膜晶体管包括依次形成于所述衬底基板上的栅极、栅极绝缘层、源漏层；
    其中，所述源漏层包括低温多晶硅以及在所述低温多晶硅两侧经过掺杂分别形成的源极和漏极。
  8. 根据权利要求7所述的液晶显示器，其中，所述反射层为金属反射层，所述金属反射层与所述漏极连接；
    所述金属反射层通过所述彩膜层上的通孔与所述像素电极连接。
  9. 根据权利要求1所述的液晶显示器，其中，还包括：
    偏光片，设置在所述上基板远离所述液晶层的一侧。
  10. 一种阵列基板，其中，包括衬底基板以及依次形成于所述衬底基板上的反射层以及彩膜层；
    其中，所述彩膜层的厚度从所述彩膜层的中间向所述彩膜层的边缘减小。
  11. 根据权利要求10所述的阵列基板，其中，所述彩膜层靠近所述反射层的一面为平面，背离所述反射层的一面为曲面。
  12. 根据权利要求10所述的阵列基板，其中，所述彩膜层为红色光阻层、绿色光阻层或蓝色光阻层。
  13. 根据权利要求10所述的阵列基板，其中，还包括设置在所述反射层靠近所述衬底基板一侧的薄膜晶体管以及依序设置在所述彩膜层远离所述衬底基板一侧的像素电极、绝缘层和公共电极。
  14. 根据权利要求13所述的阵列基板，其中，所述薄膜晶体管包括依次形成于所述衬底基板上的栅极、栅极绝缘层、源漏层；
    其中，所述源漏层包括低温多晶硅以及在所述低温多晶硅两侧经过掺杂分别形成的源极和漏极。
  15. 根据权利要求14所述的阵列基板，其中，所述反射层为金属反射层，所述金属反射层与所述漏极连接；
    所述金属反射层通过所述彩膜层上的通孔与所述像素电极连接。
  16. 一种阵列基板的制造方法，其中，包括：
    提供一衬底基板；
    在所述衬底基板上依次形成反射层以及彩膜层；
    对所述彩膜层进行蚀刻，以使所述彩膜层中间的厚度大于边缘的厚度。
  17. 根据权利要求16所述的方法，其中，所述彩膜层采用负性光刻胶制成；
    所述对所述彩膜层进行蚀刻，以使所述彩膜层中间的厚度大于边缘的厚度，包括：
    采用遮光板遮挡所述彩膜层；其中，所述遮光板的透光率从所述遮光板的中间向所述遮光板的边缘减小；
    对所述彩膜层进行曝光；
    对所述彩膜层进行显影，以使所述彩膜层的厚度从所述彩膜层的中间向所述彩膜层的边缘减小。
  18. 根据权利要求16所述的方法，其中，所述在所述衬底基板上依次形成反射层以及彩膜层之前，还包括：
    所述在所述衬底基板上形成薄膜晶体管；
    所述对所述彩膜层进行蚀刻，以使所述彩膜层中间的厚度大于边缘的厚度之后，还包括：
    在所述彩膜层上依次形成像素电极、绝缘层以及公共电极。
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