WO2017181463A1 - Substrat de matrice et son procédé de fabrication, et dispositif d'affichage - Google Patents

Substrat de matrice et son procédé de fabrication, et dispositif d'affichage Download PDF

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Publication number
WO2017181463A1
WO2017181463A1 PCT/CN2016/082305 CN2016082305W WO2017181463A1 WO 2017181463 A1 WO2017181463 A1 WO 2017181463A1 CN 2016082305 W CN2016082305 W CN 2016082305W WO 2017181463 A1 WO2017181463 A1 WO 2017181463A1
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WO
WIPO (PCT)
Prior art keywords
layer
substrate
color film
film layer
reflective layer
Prior art date
Application number
PCT/CN2016/082305
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English (en)
Chinese (zh)
Inventor
徐向阳
Original Assignee
深圳市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of WO2017181463A1 publication Critical patent/WO2017181463A1/fr

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136227Through-hole connection of the pixel electrode to the active element through an insulation layer
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136222Colour filters incorporated in the active matrix substrate

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular to an array substrate, a method of manufacturing the same, and a liquid crystal display.
  • Liquid crystal display (Liquid Crystal Display, LCD), according to the type of light source used and the way the light source is set, can be divided into a transmissive liquid crystal display, a semi-transmissive liquid crystal display, and a reflective liquid crystal display.
  • a reflective liquid crystal display In the case of a reflective liquid crystal display, it displays a picture by reflecting ambient light or reflecting light emitted from a light source disposed in front of the display panel. Due to the limitation of the incident direction of the ambient light or the front light source, the display angle of view of the existing reflective liquid crystal display panel is too small, and the brightness is not uniform enough.
  • the technical problem to be solved by the present invention is to provide an array substrate, a manufacturing method thereof, and a liquid crystal display, which can enlarge the viewing angle of the display and increase the brightness of the display.
  • a technical solution adopted by the present invention is to provide an array substrate including a substrate substrate and a reflective layer and a color film layer sequentially formed on the substrate substrate; wherein, the color film layer The thickness decreases from the middle of the color film layer to the edge of the color film layer.
  • one side of the color film layer adjacent to the reflective layer is a plane, and one side facing away from the reflective layer is a curved surface.
  • the color film layer is a red photoresist layer, a green photoresist layer or a blue photoresist layer.
  • the method further includes a thin film transistor disposed on a side of the reflective layer adjacent to the substrate, and a pixel electrode, an insulating layer, and a common electrode disposed on the side of the color film layer away from the substrate.
  • the thin film transistor includes a gate electrode, a gate insulating layer, and a source/drain layer sequentially formed on the base substrate; wherein the source and drain layers include low temperature polysilicon and source and drain electrodes respectively formed by doping on both sides of the low temperature polysilicon .
  • the reflective layer is a metal reflective layer, and the metal reflective layer is connected to the drain; the metal reflective layer is connected to the pixel electrode through a through hole in the color film layer.
  • another technical solution adopted by the present invention is to provide a method for manufacturing an array substrate, the method comprising: providing a substrate; forming a reflective layer and a color film layer sequentially on the substrate; The color film layer is etched such that the thickness in the middle of the color film layer is greater than the thickness of the edge.
  • the color film layer is made of negative photoresist; the color film layer is etched so that the thickness of the middle of the color film layer is greater than the thickness of the edge layer, including: shielding the color film layer with a light shielding plate; wherein the light shielding plate is transparent The light rate decreases from the middle of the visor to the edge of the visor; the color film layer is exposed; the color film layer is developed to reduce the thickness of the color film layer from the middle of the color film layer to the edge of the color film layer .
  • the method further includes: forming a thin film transistor on the substrate; and etching the color film layer so that the thickness of the middle of the color film layer is greater than the thickness of the edge.
  • the method further includes sequentially forming a pixel electrode, an insulating layer, and a common electrode on the color film layer.
  • a liquid crystal display including an array substrate, an upper substrate, and a liquid crystal layer between the array substrate and the upper substrate; wherein the array substrate includes a substrate a substrate and a reflective layer and a color filter layer sequentially formed on the base substrate; wherein the thickness of the color filter layer decreases from the middle of the color filter layer to the edge of the color filter layer.
  • one side of the color film layer adjacent to the reflective layer is a plane, and one side facing away from the reflective layer is a curved surface.
  • the color film layer is a red photoresist layer, a green photoresist layer or a blue photoresist layer.
  • the method further includes a thin film transistor disposed on a side of the reflective layer adjacent to the substrate, and a pixel electrode, an insulating layer, and a common electrode disposed on the side of the color film layer away from the substrate.
  • the thin film transistor includes a gate electrode, a gate insulating layer, and a source/drain layer sequentially formed on the base substrate; wherein the source and drain layers include low temperature polysilicon and source and drain electrodes respectively formed by doping on both sides of the low temperature polysilicon .
  • the reflective layer is a metal reflective layer, and the metal reflective layer is connected to the drain; the metal reflective layer is connected to the pixel electrode through a through hole in the color film layer.
  • the liquid crystal display further includes: a polarizer disposed on a side of the upper substrate away from the liquid crystal layer.
  • the array substrate of the present invention comprises a substrate substrate and a reflective layer and a color film layer sequentially formed on the substrate substrate; wherein the thickness of the color film layer is from the color film.
  • the middle of the layer is reduced toward the edge of the color film layer.
  • the color film layer adopts a structure with a thick intermediate edge and a thin edge to form an approximate plano-convex mirror, which has a diverging effect on the reflected light formed by the reflection of the incident optical fiber, thereby enlarging the exit angle of the light, thereby expanding the viewing angle of the display. , increase the brightness of the display.
  • FIG. 1 is a schematic structural view of a first embodiment of an array substrate of the present invention
  • FIG. 2 is a schematic view of an optical path of a first embodiment of the array substrate of the present invention
  • FIG. 3 is a schematic structural view of a second embodiment of the array substrate of the present invention.
  • FIG. 4 is a schematic flow chart of an embodiment of a method for fabricating an array substrate of the present invention.
  • FIG. 5 is a schematic view showing the fabrication of a color film layer in an embodiment of the method for fabricating an array substrate of the present invention
  • Fig. 6 is a schematic structural view of an embodiment of a liquid crystal display of the present invention.
  • a schematic structural view of a first embodiment of an array substrate of the present invention includes a substrate substrate 11 and a reflective layer 12 and a color film layer 13 sequentially formed on the substrate substrate 11 .
  • the base substrate 11 is generally a transparent glass substrate.
  • the thickness of the color film layer 13 decreases from the middle of the color film layer 13 to the edge of the color film layer 13.
  • one side of the color film layer 13 adjacent to the reflective layer 12 is a flat surface, and one side facing away from the reflective layer 12 is a curved surface.
  • the color film layer 13 is a red photoresist layer, a green photoresist layer or a blue photoresist layer. It can be understood that FIG. 1 is only a cross-sectional view of one pixel of the array substrate, wherein the color film layer 13 has only one color, and the adjacent pixel points have different colors on the entire array substrate, for example, may be red, The green and blue colors are alternately arranged in an array.
  • the downward arrow indicates incident light
  • the upward arrow indicates outgoing light
  • one side of the color film layer 13 near the reflective layer 12 is a flat surface, and one side facing away from the reflective layer 12 is a curved surface. That is, a part of the color film layer 13 is a structure similar to a plano-convex mirror, and the plano-convex mirror can concentrate the light, and when the incident light is irradiated onto the color film layer 13, the light is emitted after being reflected by the color film layer 13 and reflected by the reflective layer 12. The angle is enlarged.
  • the array substrate of the present embodiment includes a base substrate and a reflective layer and a color film layer sequentially formed on the base substrate; wherein the thickness of the color film layer is from the middle of the color film layer to the color film layer. The edge is reduced.
  • the color film layer adopts a structure with a thick intermediate edge and a thin edge to form an approximate plano-convex mirror, which has a diverging effect on the reflected light formed by the reflection of the incident optical fiber, thereby enlarging the exit angle of the light, thereby expanding the viewing angle of the display. , increase the brightness of the display.
  • the array substrate includes a substrate substrate 31, a thin film transistor 32 sequentially formed on the substrate substrate 31, a reflective layer 33, a color film layer 34, and a pixel electrode. 35, an insulating layer 36 and a common electrode 37.
  • the thin film transistor 32 includes a gate electrode 321 , a gate insulating layer 322 , and a source/drain layer sequentially formed on the substrate substrate 31 .
  • the source and drain layers include low temperature polysilicon 323 and doped on both sides of the low temperature polysilicon 323. Source 324 and drain 325.
  • low temperature polysilicon 323 is formed on the gate insulating layer 322, and both sides of the low temperature polysilicon 323 are heavily doped, and then a layer of metal is formed on the low temperature polysilicon 323, and the metal is patterned to respectively A source 324, a drain 325, and a reflective layer 33 are formed. The drain 325 and the reflective layer 33 are connected, and the source 324 and the drain 325 are respectively connected to the heavily doped sides of the low temperature polysilicon 323.
  • the metal reflective layer 33 is connected to the pixel electrode 35 through a through hole 341 in the color filter layer 34.
  • the data line connected to the source 324 passes the data signal through the source 324 and the drain 325.
  • the reflective layer 33 is transferred to the pixel electrode 35 to form a pressure difference between the pixel electrode 35 and the common electrode 37 to deflect the liquid crystal molecules, thereby controlling the display of the image.
  • the common electrode 37 may not be disposed on the array substrate, but disposed on the upper substrate, and the liquid crystal molecules are located between the upper substrate and the array substrate.
  • the thin film transistor 32 may also be of a top gate type, and the doping manner thereof may also be replaced.
  • FIG. 4 is a schematic flow chart of an embodiment of a method for fabricating an array substrate according to the present invention. The method includes:
  • the base substrate is a transparent glass substrate.
  • the method of forming the reflective layer and the color filter layer on the base substrate may be by physical vapor deposition or chemical vapor deposition.
  • 51 is an array substrate
  • 52 is a color film layer, and is made of a negative photoresist, that is, a negative photoresist
  • 53 is a light shielding plate.
  • the light transmittance in the middle of the light shielding plate 53 is greater than the light transmittance of the edge.
  • the light transmittance can be changed by adjusting the thickness of each region of the light shielding plate 53, for example, hollowing in the middle, and then gradually thickening toward the edge.
  • the color filter layer 52 is blocked by the light shielding plate 53; wherein the light transmittance of the light shielding plate 53 is reduced from the middle of the light shielding plate 53 toward the edge of the light shielding plate 53; the color film layer 52 is exposed; and the color film layer 2 is developed.
  • the thickness of the color filter layer 52 is reduced from the middle of the color filter layer 52 toward the edge of the color filter layer 52.
  • the color film layer 52 is made of a negative photoresist, the exposed portion remains on the array substrate 51 after the development process, and the remaining portions are different in thickness depending on the degree of the explosion, so the thickness of the color film layer 52 is different. Decrease from the middle to the edge.
  • the method further includes: forming a thin film transistor on the base substrate.
  • the method further includes: sequentially forming a pixel electrode, an insulating layer, and a common electrode on the color film layer.
  • a schematic structural diagram of an embodiment of a liquid crystal display according to the present invention includes an array substrate 61, an upper substrate 62, and a liquid crystal layer 63 between the array substrate 61 and the upper substrate 62.
  • a polarizer 64 is further included on a side of the upper substrate 62 away from the liquid crystal layer 63.
  • the array substrate 61 includes a color film layer, and the thickness of the color film layer is reduced from the middle of the color film layer to the edge of the color film layer, so that the color film layer has a diverging effect on the emitted light, thereby expanding the viewing angle of the liquid crystal display.
  • the array substrate 61 is an array substrate as described in the above embodiments, and the embodiments are similar, and details are not described herein again.
  • the color film layer or the common electrode may also be disposed on the upper substrate.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Crystal (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

La présente invention concerne un substrat de matrice, son procédé de fabrication, et un affichage à cristaux liquides. Le substrat de matrice comprend un substrat de base (11), ainsi qu'une couche réfléchissante (12) et une couche de film coloré (13) séquentiellement formées sur le substrat de base (11), l'épaisseur de la couche de film coloré (13) diminuant du centre de la couche de film coloré (13) au bord de la couche de film coloré (13). De cette manière, l'angle d'observation de l'affichage peut être élargi, et la luminosité de l'affichage peut être augmentée.
PCT/CN2016/082305 2016-04-18 2016-05-17 Substrat de matrice et son procédé de fabrication, et dispositif d'affichage WO2017181463A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610242246.9A CN105700261B (zh) 2016-04-18 2016-04-18 阵列基板及其制造方法、液晶显示器
CN201610242246.9 2016-04-18

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Publication Number Publication Date
WO2017181463A1 true WO2017181463A1 (fr) 2017-10-26

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WO (1) WO2017181463A1 (fr)

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Publication number Priority date Publication date Assignee Title
CN106353945A (zh) * 2016-11-18 2017-01-25 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置
CN107611139B (zh) * 2017-08-10 2020-06-30 昆山龙腾光电股份有限公司 薄膜晶体管阵列基板及制作方法
CN110164944A (zh) * 2019-06-03 2019-08-23 京东方科技集团股份有限公司 显示基板及其制造方法、掩膜版、显示装置
CN111427205A (zh) * 2020-03-12 2020-07-17 Tcl华星光电技术有限公司 阵列基板及其制备方法、液晶显示面板
CN111796453A (zh) * 2020-07-08 2020-10-20 Tcl华星光电技术有限公司 一种液晶显示面板

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JP2003337327A (ja) * 2002-05-20 2003-11-28 Sony Corp 液晶表示装置
CN101047091A (zh) * 2006-03-28 2007-10-03 三星Sdi株式会社 滤光器及其制造方法及包括滤光器的等离子显示设备
CN101063725A (zh) * 2006-03-28 2007-10-31 三星Sdi株式会社 用于显示面板的滤光器组件及包含其的显示设备
CN202870328U (zh) * 2012-11-15 2013-04-10 京东方科技集团股份有限公司 一种彩色滤光片及彩色显示装置
CN103838043A (zh) * 2014-02-18 2014-06-04 京东方科技集团股份有限公司 一种阵列基板及其制备方法、液晶显示面板

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CN103185981B (zh) * 2013-03-15 2016-04-06 京东方科技集团股份有限公司 彩色滤光阵列基板及其制备方法和显示装置
CN103353683B (zh) * 2013-06-26 2016-02-10 京东方科技集团股份有限公司 一种阵列基板以及包括该阵列基板的显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003337327A (ja) * 2002-05-20 2003-11-28 Sony Corp 液晶表示装置
CN101047091A (zh) * 2006-03-28 2007-10-03 三星Sdi株式会社 滤光器及其制造方法及包括滤光器的等离子显示设备
CN101063725A (zh) * 2006-03-28 2007-10-31 三星Sdi株式会社 用于显示面板的滤光器组件及包含其的显示设备
CN202870328U (zh) * 2012-11-15 2013-04-10 京东方科技集团股份有限公司 一种彩色滤光片及彩色显示装置
CN103838043A (zh) * 2014-02-18 2014-06-04 京东方科技集团股份有限公司 一种阵列基板及其制备方法、液晶显示面板

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CN105700261B (zh) 2019-07-12

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