CN105700261B - 阵列基板及其制造方法、液晶显示器 - Google Patents
阵列基板及其制造方法、液晶显示器 Download PDFInfo
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Abstract
本发明公开了阵列基板及其制造方法、液晶显示器,该阵列基板包括衬底基板以及依次形成于衬底基板上的反射层以及彩膜层;其中,彩膜层的厚度从彩膜层的中间向彩膜层的边缘减小。通过上述方式,本发明能够扩大显示器的视角,增加显示器的亮度。
Description
技术领域
本发明涉及液晶显示技术领域,特别是涉及阵列基板及其制造方法、液晶显示器。
背景技术
液晶显示器(Liquid Crystal Display,LCD),根据其所使用的光源的类型和光源的设置方式,可以分为透射式液晶显示器、半透射式液晶显示器和反射式液晶显示器。
就反射式液晶显示器而言,其通过反射环境光,或者反射设置于显示面板前方的光源发出的光线来显示画面。由于受限于环境光或前方光源的入射方向限制,现有反射式液晶显示面板的显示视角太小,且亮度不够均匀。
发明内容
本发明主要解决的技术问题是提供阵列基板及其制造方法、液晶显示器,能够扩大显示器的视角,增加显示器的亮度。
为解决上述技术问题,本发明采用的一个技术方案是:提供一种阵列基板,该阵列基板包括衬底基板以及依次形成于衬底基板上的反射层以及彩膜层;其中,彩膜层的厚度从彩膜层的中间向彩膜层的边缘减小。
其中,彩膜层靠近反射层的一面为平面,背离反射层的一面为曲面。
其中,彩膜层为红色光阻层、绿色光阻层或蓝色光阻层。
其中,还包括设置在反射层靠近衬底基板一侧的薄膜晶体管以及依序设置在彩膜层远离衬底基板一侧的像素电极、绝缘层和公共电极。
其中,薄膜晶体管包括依次形成于衬底基板上的栅极、栅极绝缘层、源漏层;其中,源漏层包括低温多晶硅以及在低温多晶硅两侧经过掺杂分别形成的源极和漏极。
其中,反射层为金属反射层,金属反射层与漏极连接;金属反射层通过彩膜层上的通孔与像素电极连接。
为解决上述技术问题,本发明采用的另一个技术方案是:提供一种阵列基板的制造方法,该方法包括:提供一衬底基板;在衬底基板上依次形成反射层以及彩膜层;对彩膜层进行蚀刻,以使彩膜层中间的厚度大于边缘的厚度。
其中,彩膜层采用负性光刻胶制成;对彩膜层进行蚀刻,以使彩膜层中间的厚度大于边缘的厚度,包括:采用遮光板遮挡彩膜层;其中,遮光板的透光率从遮光板的中间向遮光板的边缘减小;对彩膜层进行曝光;对彩膜层进行显影,以使彩膜层的厚度从彩膜层的中间向彩膜层的边缘减小。
其中,在衬底基板上依次形成反射层以及彩膜层之前,还包括:在衬底基板上形成薄膜晶体管;对彩膜层进行蚀刻,以使彩膜层中间的厚度大于边缘的厚度之后,还包括:在彩膜层上依次形成像素电极、绝缘层以及公共电极。
为解决上述技术问题,本发明采用的另一个技术方案是:提供一种液晶显示器,该液晶显示器包括阵列基板、上基板以及阵列基板和上基板之间的液晶层;其中,阵列基板是如上的阵列基板。
本发明的有益效果是:区别于现有技术的情况,本发明的阵列基板包括衬底基板以及依次形成于衬底基板上的反射层以及彩膜层;其中,彩膜层的厚度从彩膜层的中间向彩膜层的边缘减小。通过上述方式,彩膜层采用中间厚、边缘薄的结构,形成近似的平凸镜,对入射光纤反射后形成的反射光具有发散作用,进而使光线的出射角被放大,扩大了显示器的视角,增加显示器的亮度。
附图说明
图1是本发明阵列基板第一实施方式的结构示意图;
图2是本发明阵列基板第一实施方式的光路示意图;
图3是本发明阵列基板第二实施方式的结构示意图;
图4是本发明阵列基板的制作方法一实施方式的流程示意图;
图5是本发明阵列基板的制作方法一实施方式中彩膜层的制作示意图;
图6是本发明液晶显示器一实施方式的结构示意图。
具体实施方式
参阅图1,本发明阵列基板第一实施方式的结构示意图,该阵列基板包括衬底基板11以及依次形成于衬底基板11上的反射层12以及彩膜层13。
其中,衬底基板11一般为透明的玻璃基板。
其中,彩膜层13的厚度从彩膜层13的中间向彩膜层13的边缘减小。
可选的,在本实施方式中,彩膜层13靠近反射层12的一面为平面,背离反射层12的一面为曲面。
可选的,彩膜层13为红色光阻层、绿色光阻层或蓝色光阻层。可以理解的,图1所示仅为阵列基板一个像素的截面图,其中的彩膜层13仅有一种颜色,在整个阵列基板上,相邻的像素点的颜色不同,例如,可以是红、绿、蓝三色交替阵列分布。
如图2所示,其中,向下的箭头表示入射光,向上的箭头表示出射光。
可以理解的,彩膜层13靠近反射层12的一面为平面,背离反射层12的一面为曲面。即彩膜层13的一部分为类似平凸镜的结构,平凸镜能够汇聚光线,当入射光线照射到彩膜层13后经过彩膜层13的折射和反射层12的反射后使光线的出射角度被放大。
区别于现有技术,本实施方式的阵列基板包括衬底基板以及依次形成于衬底基板上的反射层以及彩膜层;其中,彩膜层的厚度从彩膜层的中间向彩膜层的边缘减小。通过上述方式,彩膜层采用中间厚、边缘薄的结构,形成近似的平凸镜,对入射光纤反射后形成的反射光具有发散作用,进而使光线的出射角被放大,扩大了显示器的视角,增加显示器的亮度。
参阅图3,本发明阵列基板第二实施方式的结构示意图,该阵列基板包括衬底基板31以及依次形成于该衬底基板31上的薄膜晶体管32、反射层33、彩膜层34,像素电极35,绝缘层36以及公共电极37。
其中,薄膜晶体管32包括依次形成于衬底基板上31的栅极321、栅极绝缘层322、源漏层;其中,源漏层包括低温多晶硅323以及在低温多晶硅323两侧经过掺杂分别形成的源极324和漏极325。
具体地的,在栅极绝缘层322上形成低温多晶硅323,并对该低温多晶硅323的两侧进行重型掺杂,再在低温多晶硅323上形成一层金属,并对金属进行图形化,以分别形成源极324、漏极325以及反射层33。其中,漏极325和反射层33是连接的,源极324和漏极325分别连接低温多晶硅323上经过重型掺杂的两侧。
另外,金属反射层33通过彩膜层34上的通孔341与像素电极35连接。
在具体实现中,当连接栅极321的扫描信号使薄膜晶体管32导通时,即源极324和漏极325导通,连接源极324的数据线将数据信号通过源极324、漏极325、反射层33传递到像素电极35,以使像素电极35和公共电极37之间形成压差,使液晶分子发生偏转,从而控制图像的显示。
可选的,在其他实施方式中,公共电极37也可以不设置在阵列基板上,而是设置在上基板上,液晶分子位于上基本和阵列基板之间。
可选的,在其他实施方式中,薄膜晶体管32也可以是顶栅型的,其掺杂方式也可以进行替换。
可以理解的,本实施方式中对于除反射层33和彩膜层34之外的其他结构,均为举例,并不限制本发明的保护范围。
参阅图4,本发明阵列基板的制作方法一实施方式的流程示意图,该方法包括:
S41:提供一衬底基板。
可选的,衬底基板是透明的玻璃基板。
S42:在衬底基板上依次形成反射层以及彩膜层。
可选的,在衬底基板上形成反射层以及彩膜层的方法,可以是通过物理气相沉积或化学气相沉积的方式。
S43:对彩膜层进行蚀刻,以使彩膜层中间的厚度大于边缘的厚度。
如图5所示,51为阵列基板,52为彩膜层,采用负性光阻,即负性光刻胶制成,53为遮光板。其中,遮光板53中间的透光性大于边缘的透光性。具体地,可以通过调节遮光板53各个区域的厚度来改变透光性,例如中间为镂空,然后往边缘逐渐加厚。
具体流程如下:
采用遮光板53遮挡彩膜层52;其中,遮光板53的透光率从遮光板53的中间向遮光板53的边缘减小;对彩膜层52进行曝光;对彩膜层2进行显影,以使彩膜层52的厚度从彩膜层52的中间向彩膜层52的边缘减小。
由于彩膜层52由负性光阻制成,因此通过显影工艺后,被曝光的部分留在阵列基板51上,其余部分根据爆分的程度不同,则厚度不同,所以彩膜层52的厚度从中间向边缘减少。
可选的,在S42之前,还可以包括:在衬底基板上形成薄膜晶体管。
可选的,在S43之后,还可以包括:在彩膜层上依次形成像素电极、绝缘层以及公共电极。
参阅图6,本发明液晶显示器一实施方式的结构示意图,该液晶显示器包括阵列基板61、上基板62以及阵列基板61和上基板62之间的液晶层63。
可选的,在上基板62远离液晶层63的一侧,还包括偏光片64。
其中,阵列基板61包括彩膜层,彩膜层的厚度从彩膜层的中间向彩膜层的边缘减小,以使彩膜层对出射光线具有发散作用,从而扩大液晶显示器的视角。
其中,阵列基板61是如上各个实施方式中所描述的的阵列基板,其实施方式类似,这里不再赘述。
可选的,在其他实施方式中,也可以将彩膜层或者公共电极设置在上基板上。
以上所述仅为本发明的实施方式,并非因此限制本发明的专利范围,凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。
Claims (6)
1.一种阵列基板,其特征在于,包括衬底基板以及依次形成于所述衬底基板上的薄膜晶体管、反射层、彩膜层、像素电极、绝缘层和公共电极;
其中,所述反射层与所述薄膜晶体管的源极和漏极是采用同一道沉积工艺形成的同一层、且所述反射层与所述漏极形成电连接,所述反射层通过所述彩膜层上的通孔与所述像素电极连接;
其中,所述彩膜层的厚度从所述彩膜层的中间向所述彩膜层的边缘减小,且所述彩膜层靠近所述反射层的一面为平面,背离所述反射层的一面为曲面,所述像素电极、所述绝缘层和所述公共电极在对应所述彩膜层的部分,呈与所述彩膜层的曲面相对应的曲面。
2.根据权利要求1所述的阵列基板,其特征在于,所述彩膜层为红色光阻层、绿色光阻层或蓝色光阻层。
3.根据权利要求1所述的阵列基板,其特征在于,所述薄膜晶体管包括依次形成于所述衬底基板上的栅极、栅极绝缘层、源漏层;
其中,所述源漏层包括低温多晶硅以及在所述低温多晶硅两侧经过掺杂分别形成的源极和漏极。
4.一种阵列基板的制造方法,其特征在于,包括:
提供一衬底基板;
在所述衬底基板上依次形成薄膜晶体管、反射层以及彩膜层;其中,所述反射层与所述薄膜晶体管的源极和漏极是采用同一道沉积工艺形成的同一层、且所述反射层与所述漏极形成电连接;
对所述彩膜层进行蚀刻,以使所述彩膜层中间的厚度大于边缘的厚度,且所述彩膜层靠近所述反射层的一面为平面,背离所述反射层的一面为曲面;
在所述彩膜层上依次形成像素电极、绝缘层以及公共电极;所述反射层通过所述彩膜层上的通孔与所述像素电极连接,且所述像素电极、所述绝缘层和所述公共电极在对应所述彩膜层的部分,呈与所述彩膜层的曲面相对应的曲面。
5.根据权利要求4所述的方法,其特征在于,所述彩膜层采用负性光刻胶制成;
所述对所述彩膜层进行蚀刻,以使所述彩膜层中间的厚度大于边缘的厚度,包括:
采用遮光板遮挡所述彩膜层;其中,所述遮光板的透光率从所述遮光板的中间向所述遮光板的边缘减小;
对所述彩膜层进行曝光;
对所述彩膜层进行显影,以使所述彩膜层的厚度从所述彩膜层的中间向所述彩膜层的边缘减小;
在所述彩膜层上依次形成像素电极、绝缘层以及公共电极。
6.一种液晶显示器,其特征在于,包括阵列基板、上基板以及所述阵列基板和所述上基板之间的液晶层;
其中,所述阵列基板是如权利要求1-3任一项所述的阵列基板。
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