WO2017179736A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2017179736A1
WO2017179736A1 PCT/JP2017/015404 JP2017015404W WO2017179736A1 WO 2017179736 A1 WO2017179736 A1 WO 2017179736A1 JP 2017015404 W JP2017015404 W JP 2017015404W WO 2017179736 A1 WO2017179736 A1 WO 2017179736A1
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Prior art keywords
flow path
path member
semiconductor device
circuit unit
layer
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PCT/JP2017/015404
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English (en)
French (fr)
Japanese (ja)
Inventor
猛 宗石
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京セラ株式会社
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Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to JP2018512114A priority Critical patent/JP6657382B2/ja
Priority to CN201780023523.XA priority patent/CN109075145B/zh
Priority to EP17782549.4A priority patent/EP3428964B1/de
Priority to US16/093,188 priority patent/US10971430B2/en
Priority to KR1020187029466A priority patent/KR102152668B1/ko
Publication of WO2017179736A1 publication Critical patent/WO2017179736A1/ja

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    • H—ELECTRICITY
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    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
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    • H01L21/4882—Assembly of heatsink parts
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
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    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
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    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
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    • H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
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    • H01L2224/92222—Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92225—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector

Definitions

  • the present disclosure relates to a semiconductor device.
  • High power semiconductor devices are widely used as power conversion devices for railway vehicles and the like.
  • Examples of such a semiconductor device include an inverter that employs a semiconductor element such as an IGBT (Insulated Gate Bipolar Transistor) or an FWD (Free Wheeling Diode).
  • IGBT Insulated Gate Bipolar Transistor
  • FWD Free Wheeling Diode
  • a semiconductor element is sandwiched between two lead frames, and a ceramic tube having a coolant channel for flowing a coolant is provided outside each lead frame. Yes.
  • the semiconductor element and the signal line are connected by wire bonding.
  • a semiconductor device of the present disclosure includes a heat sink layer, a wiring layer, a circuit unit having a semiconductor element between the heat sink layer and the wiring layer, a first flow path member made of an insulating material, and a first made of an insulating material. 2 flow path members.
  • the circuit unit is located between the first flow path member and the second flow path member.
  • the wiring layer faces the first flow path member or the second flow path member.
  • the semiconductor element when heat exchange is performed between a refrigerant flowing through a ceramic tube and a semiconductor element via a lead frame, the semiconductor element can be cooled, but wire bonding that is wiring for exchanging signals is connected to the ceramic tube. Since the wire bonding is not sufficiently cooled and the wire bonding is heated, there is a possibility that the semiconductor element does not function normally.
  • the semiconductor device of the present disclosure can efficiently cool the semiconductor element and can also efficiently remove the heat of the wiring layer that exchanges signals.
  • the semiconductor device of the present disclosure will be described with reference to the drawings. However, in each drawing referred to below, only components necessary for explaining the characteristics of the semiconductor device of the present disclosure are shown. Therefore, the semiconductor device of the present disclosure may further include a well-known constituent member that is not shown in each drawing.
  • FIG. 1 is a cross-sectional view schematically showing a first embodiment of the semiconductor device of the present disclosure.
  • the semiconductor device 100 shown in FIG. 1 includes a heat sink layer 13, wiring layers 16a to 16d, and a heat sink layer 13 and wiring layers 16a to 16d between the first flow path member 11 and the second flow path member 21.
  • the circuit unit 10 having the semiconductor element 14 is sandwiched.
  • the first flow path member 11 and the second flow path member 21 have refrigerant flow paths 12 and 22 for flowing a cooling medium (hereinafter also referred to as “refrigerant”) therein.
  • the refrigerant may be any liquid or gas that can be cooled.
  • the liquid refrigerant pure water, Galden, or the like may be used, and a rust inhibitor may be added.
  • the circuit unit 10 can be cooled from both sides by flowing the refrigerant through the refrigerant flow paths 12 and 22.
  • the wiring layers 16a to 16d face the second flow path member 21, heat generated in the wiring layers 16a to 16d during signal exchange can be efficiently removed. .
  • the function of the semiconductor element 14 is hardly deteriorated. Furthermore, since the heat sink layer 13 faces the first flow path member 11, the semiconductor element 14 can be efficiently cooled via the wiring layers 16a to 16d and the heat sink layer 13.
  • first flow path member 11 and the second flow path member 21 are made of an insulating material, the wiring layers 16a to 16d and the heat sink layer 13 can be formed directly, and the wiring layers 16a to 16d are formed. In addition, the heat of the heat sink layer 13 can be immediately transferred to the first flow path member 11 and the second flow path member 21.
  • the insulating material may be ceramics such as alumina ceramics, alumina-zirconia composite ceramics, aluminum nitride ceramics, and silicon nitride ceramics.
  • the first flow path member 11 and the second flow path member 21 are formed of silicon nitride ceramics, whereby the semiconductor according to the present disclosure.
  • the apparatus 100 has excellent cooling efficiency and mechanical strength.
  • silicon nitride ceramics contains 70% by mass or more of silicon nitride out of 100% by mass of all components constituting the ceramics.
  • the material of the 1st flow path member 11 and the 2nd flow path member 21 can be confirmed with the following method. First, measurement is performed using an X-ray diffractometer (XRD), and the obtained 2 ⁇ (2 ⁇ is a diffraction angle) value is identified with a JCPDS card. Next, quantitative analysis of each component is performed using an ICP (Inductively Coupled Plasma) emission spectroscopic analyzer (ICP) or a fluorescent X-ray analyzer (XRF).
  • ICP Inductively Coupled Plasma
  • XRF fluorescent X-ray analyzer
  • silicon nitride ceramics if the presence of silicon nitride is confirmed, and the content converted from silicon (Si) content measured by ICP or XRF to silicon nitride (Si 3 N 4 ) is 70% by mass or more, Silicon nitride ceramics. The same applies to other ceramics.
  • the first channel member 11 and the second channel member 21 may be made of ceramics by an extrusion method in which a mold is prepared and the clay is extruded, a lamination method in which green sheets are laminated, and the like. If it is a lamination method, the structure of the refrigerant flow paths 12 and 22 can be designed freely.
  • FIG. 2A is a schematic front view of the circuit unit of the first embodiment of the semiconductor device of the present disclosure.
  • FIG. 2A shows a view seen from the wiring layers 16a to 16d with the first flow path member 11 removed. Further, in FIG. 2A, in the four wiring layers 16a to 16d having the same configuration, the wiring layers 16a to 16d are connected to the semiconductor element (for example, IGBT) 14 via the brazing material or solder 15a to 15d. The situation is shown. In FIG. 2A, brazing materials or solders 15a to 15d, which are hidden, are indicated by broken lines.
  • FIG. 2B is a schematic rear view of the circuit unit of the first embodiment of the semiconductor device of the present disclosure, and corresponds to FIG. 2A. Also in FIG. 2B, the semiconductor element 14 and the wiring layers 16a to 16d of the hidden configuration and the partially hidden portion are indicated by broken lines.
  • FIG. 2C is a schematic view of a modified example of the circuit unit of the first embodiment of the semiconductor device of the present disclosure as viewed from the side. 2C, the collector of the semiconductor element 14 is on the heat sink layer 13 side, the gate of the semiconductor element 14 is on the wiring layer 16a side, and the emitter of the semiconductor element 14 is on the wiring layer 16e side. Is connected to the heat sink layer 13, the gate of the semiconductor element 14 is connected to the wiring layer 16a via a brazing material or solder 15a, and the emitter of the semiconductor element 14 is connected to the wiring layer 16e.
  • the semiconductor element 14 is an IGBT
  • another wiring layer is provided on the second flow path member 21 and connected to the collector and emitter of the semiconductor element 14 so that it can function as an IGBT power module.
  • the wiring layers 16a to 16d constituting the circuit unit 10 are wirings or terminals for connecting to external devices, signal terminals, and the like.
  • the heat sink layer 13 constituting the circuit unit 10 is a member for transferring the heat of the semiconductor element 14 to the first flow path member 11.
  • the heat sink layer 13 may function as an electrode.
  • the semiconductor element 14 is, for example, an IGBT (Insulated Gate Bipolar Transistor) or an FWD (Free Wheeling Diode), and may include a capacitor, a resistor, or the like which is another circuit element.
  • the wiring layers 16a to 16d and the heat sink layer 13 constituting the circuit unit 10 only have to be made of metal, but among the metals, if they are made of copper, copper alloy, aluminum, aluminum alloy, etc., they are excellent. It will have thermal conductivity.
  • the wiring layers 16a to 16d may be connected to the semiconductor element 14 via brazing material or solders 15a to 15d, as shown in FIG.
  • the heat sink layer 13 may be connected to the semiconductor element 14 through a brazing material, solder, or a nano metal paste mainly composed of gold, silver, or copper.
  • the brazing material or solder 15a to 15d a known material may be used.
  • a silver-based brazing material or tin-based solder may be used.
  • a metal plate such as a copper plate or an aluminum plate is used as the first flow path member 11 or the second flow path member 11.
  • a metal plate is bonded through a silver and copper brazing material added with an active metal such as titanium, zirconium, hafnium, niobium, DBC (Direct Bond Aluminum) method or DBA (Direct Bond Aluminum) method to be directly attached to the flow path member 21.
  • AMB Active Metal Bonding
  • the semiconductor device 100 is less prone to crack even in a long-term thermal cycle. And reliability can be improved.
  • FIG. 3A is a cross-sectional view schematically showing a second embodiment of the semiconductor device of the present disclosure.
  • the circuit unit 20 of the semiconductor device 200 is a unit having a stacked structure similar to that of the circuit unit 10, and similarly, the wiring layers 26a to 26d face the first flow path member 11. It is cooled efficiently.
  • circuit units 10 and 20 do not necessarily have the same laminated structure.
  • the circuit units 10 and 20 even if elements or members constituting each layer are partially different, for example, by changing the thickness of the heat sink layers 13 and 23, the thickness of the elements or the like can be increased. You may comprise so that a difference may be absorbed and it may be settled between the 1st flow path member 11 and the 2nd flow path member 21 without producing stress distortion.
  • the circuit unit 10 and the circuit unit 20 are arranged adjacent to each other and are upside down, that is, “heat sink layer ⁇ semiconductor element ⁇ wiring layer” and “wiring layer ⁇ semiconductor” As in “element ⁇ heat sink layer”, the stacking order is reversed. That is, in FIG. 3A, in the arrangement defined in the direction from the first flow path member 11 to the second flow path member 21, the order of the heat sink layer 13, the semiconductor element 14, and the wiring layers 16a to 16d is the first circuit unit. 10, the wiring layers 26 a to 26 d, the semiconductor element 24, and the heat sink layer 23 are in this order as the second circuit unit 20.
  • the wiring layers 16a to 16d and the wiring layers 26a to 26d are connected to the first flow path member 11 or the second flow path member 11. Since it faces the flow path member 21, it can be cooled efficiently. Further, by arranging the adjacent circuit units 10 and 20 to be stacked upside down, a balance can be achieved in terms of heat and thermal stress.
  • the adjacent circuit units 10 and 20 are not limited to two but may be three or may be arranged in the front and rear. Further, a plurality of circuit units may be arranged on the front, rear, left and right.
  • the heat sink layers 13 and 23 and the wiring layers 16a to 16d and 26a to 26d are formed on the first flow path member 11 and the second flow path member 21, respectively. To do.
  • the semiconductor device 200 can be efficiently manufactured by stacking the first flow path member 11 and the second flow path member 21 and passing through the solder reflow process.
  • FIG. 3B is a cross-sectional view schematically showing a third embodiment of the semiconductor device of the present disclosure.
  • the semiconductor device 201 in FIG. 3B includes the connecting pipes 51 and 61 in the semiconductor device 200 in FIG. 3A. Then, in order to join the connection pipes 51 and 61 to the first flow path member 11 or the second flow path member 21, the connection pipes 51 and 61 are opposed to the first flow path member 11 or the second flow path member 21.
  • An adhesive layer 15e is provided between the surfaces.
  • an adhesive for example, a silicon-based brazing material or a polyimide-based adhesive
  • connection pipes 51 and 61 can be joined simultaneously with the soldering (or brazing material) between the semiconductor elements 14 and 24-wiring layers 16a to 16d and 26a to 26d.
  • the semiconductor device 201 of the present disclosure has the adhesive layer 15 e between the opposing surfaces of the connection pipes 51 and 61 and the first flow path member 11 or the second flow path member 21. , 61 from the outer peripheral surface to the first flow path member 11 or the second flow path member 21, a part of the adhesive layer 15e may be located.
  • the outer peripheral surface in the connecting pipes 51 and 61 is a surface adjacent to the opposing surface. If such a configuration is satisfied, the adhesive layer 15e causes the refrigerant flowing in the refrigerant flow paths 52 and 62 to flow between the first flow path member 11 or the second flow path member 21 and the connection pipes 51 and 61. It is possible to further suppress the leakage.
  • FIG. 4 is a cross-sectional view schematically showing a fourth embodiment of the semiconductor device of the present disclosure.
  • a semiconductor device 300 shown in FIG. 4 has a configuration in which the semiconductor device 201 in FIG. 3B is stacked two stages up and down, and a refrigerant inflow pipe 91 and a refrigerant outflow pipe 101 are added.
  • the refrigerant recirculates inside the passage.
  • the first flow path member 11, the circuit units 10 and 20, and the second flow path member 21 constitute a set of cooling units 19, and similarly, the first flow path member 31, the circuit units 30 and 40, and the second flow path member 21.
  • the flow path member 41 constitutes a set of cooling units 39. As shown in FIG.
  • the first flow path member 11 and the second flow path member 41 are members shared by the cooling units 19 and 39.
  • the circuit units 30 and 40 in FIG. 4 are units having the same stacked structure as the circuit units 10 and 20 described above, but may not necessarily have the same stacked structure.
  • first, the second flow path member 21, the first flow path member 11 (or the second flow path member 41), and the first flow path are formed by the connecting pipes 51, 61, 71, 81.
  • the cooling unit can be three-dimensionally configured, and even in this case, it is possible to balance thermal and stress.
  • it is possible to configure a stack type power module by disposing brazing material paste or the like at a predetermined location and performing heat treatment or the like, and the semiconductor device 300 having high cooling efficiency while forming a high-density circuit. It is a feature that can be realized.
  • FIG. 5 is a cross-sectional view schematically showing a fifth embodiment of the semiconductor device according to the present disclosure.
  • a semiconductor device 400 shown in FIG. 5 is an embodiment in the case of adopting a pipe in which a connecting pipe is integrated, and a pipe 111 having a notch 112 is prepared in advance and connected to the above cooling unit.
  • the stack type power module can be easily constructed.
  • a ring-shaped spacer is prepared, and the spacer is arranged at a position corresponding to the notch 112 between the plurality of flow path members, so that the plurality of flow path members are provided. It is possible to easily insert the pipe 111 positioned over the bridge. Note that.
  • Such a ring-shaped spacer also has an effect of preventing liquid leakage when the pipe 111 is damaged.
  • bonding is performed in advance in order to join the connecting pipes 51, 61, 71, and 81, the pipes 91, 101, and 111, and the ring-shaped spacer.
  • a solder for example, a silicon-based brazing material or a polyimide-based adhesive
  • the connecting pipes 51, 61, 71, 81 It is possible to join the pipes 91, 101, 111 and the ring-shaped spacer.
  • the connecting pipes 51, 61, 71, 81, the pipes 91, 101, 111, and the ring-shaped spacer are preferably materials that can withstand the solder reflow process, for example, metals, resins, and ceramics. In addition, if it is resin, it is good that it is a polyimide. Moreover, the reliability as the semiconductor devices 300 and 400 can be improved by sealing the circuit units 10, 20, 30, and 40 with a resin mold. As the resin mold, silicone gel or epoxy resin may be used. The resin mold is not only connected to the circuit units 10, 20, 30, 40 but also the connection pipes 51, 61, 71, 81, pipes 91, 101, 111, and ring-shaped spacers by resin molding together. The joint portions of the pipes 51, 61, 71, 81, the pipes 91, 101, 111, the ring-shaped spacer, and the first flow path members 11, 31 and the second flow path members 21, 41 can be reinforced.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
PCT/JP2017/015404 2016-04-15 2017-04-14 半導体装置 WO2017179736A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018512114A JP6657382B2 (ja) 2016-04-15 2017-04-14 半導体装置
CN201780023523.XA CN109075145B (zh) 2016-04-15 2017-04-14 半导体装置
EP17782549.4A EP3428964B1 (de) 2016-04-15 2017-04-14 Halbleiterbauelement
US16/093,188 US10971430B2 (en) 2016-04-15 2017-04-14 Semiconductor device
KR1020187029466A KR102152668B1 (ko) 2016-04-15 2017-04-14 반도체 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-082526 2016-04-15
JP2016082526 2016-04-15

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WO2017179736A1 true WO2017179736A1 (ja) 2017-10-19

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EP (1) EP3428964B1 (de)
JP (1) JP6657382B2 (de)
KR (1) KR102152668B1 (de)
CN (1) CN109075145B (de)
WO (1) WO2017179736A1 (de)

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US10607919B2 (en) * 2017-04-28 2020-03-31 Semiconductor Components Industries, Llc Semiconductor package having junction cooling pipes embedded in substrates
CN111933595A (zh) * 2020-07-16 2020-11-13 杰群电子科技（东莞）有限公司 一种半导体封装结构及半导体封装结构的制造方法
EP4235771A1 (de) * 2022-02-23 2023-08-30 Siemens Aktiengesellschaft Halbleiteranordnung mit zumindest einem halbleiterelement, einer ersten materiallage und einer zweiten materiallage
WO2023160949A1 (de) * 2022-02-23 2023-08-31 Siemens Aktiengesellschaft Halbleiteranordnung mit einem ersten halbleiterelement und einem ersten verbindungselement

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US20190371705A1 (en) * 2018-05-30 2019-12-05 Fuji Electric Co., Ltd. Semiconductor device, cooling module, power converting device, and electric vehicle
US10971431B2 (en) * 2018-05-30 2021-04-06 Fuji Electric Co., Ltd. Semiconductor device, cooling module, power converting device, and electric vehicle

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US10971430B2 (en) 2021-04-06
CN109075145B (zh) 2022-03-22
JPWO2017179736A1 (ja) 2019-02-21
JP6657382B2 (ja) 2020-03-04
EP3428964B1 (de) 2021-05-26
US20190122956A1 (en) 2019-04-25
KR102152668B1 (ko) 2020-09-07
EP3428964A4 (de) 2019-04-17
KR20180121624A (ko) 2018-11-07
EP3428964A1 (de) 2019-01-16
CN109075145A (zh) 2018-12-21

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