WO2017175270A1 - Câble de transmission d'énergie - Google Patents

Câble de transmission d'énergie Download PDF

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Publication number
WO2017175270A1
WO2017175270A1 PCT/JP2016/061006 JP2016061006W WO2017175270A1 WO 2017175270 A1 WO2017175270 A1 WO 2017175270A1 JP 2016061006 W JP2016061006 W JP 2016061006W WO 2017175270 A1 WO2017175270 A1 WO 2017175270A1
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WO
WIPO (PCT)
Prior art keywords
layer
semiconductive
insulating layer
power transmission
resin composition
Prior art date
Application number
PCT/JP2016/061006
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English (en)
Japanese (ja)
Inventor
正信 中橋
元治 梶山
Original Assignee
日立金属株式会社
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Filing date
Publication date
Application filed by 日立金属株式会社 filed Critical 日立金属株式会社
Priority to CN201680044461.6A priority Critical patent/CN107924739B/zh
Priority to PCT/JP2016/061006 priority patent/WO2017175270A1/fr
Priority to JP2018510023A priority patent/JP6859322B2/ja
Publication of WO2017175270A1 publication Critical patent/WO2017175270A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B7/00—Insulated conductors or cables characterised by their form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B9/00—Power cables
    • H01B9/02—Power cables with screens or conductive layers, e.g. for avoiding large potential gradients

Definitions

  • the present invention relates to a power transmission cable.
  • the power transmission cable includes an insulating layer, a shield layer (shielding layer), and a jacket layer (sheath) in this order so as to cover the outer periphery of the conductor.
  • a shield layer shield layer
  • a jacket layer sheath
  • a partial discharge may occur in the gap when a high voltage is applied to the power transmission cable.
  • the partial discharge accelerates deterioration of the insulating layer by ionizing air in the vicinity of the power transmission cable and causes dielectric breakdown.
  • a semiconductive layer (external A semiconductive layer) is provided.
  • the outer semiconductive layer fills the unevenness on the surface of the insulating layer and suppresses the formation of voids that cause partial discharge.
  • the external semiconductive layer is formed of a semiconductive resin composition containing a conductivity-imparting agent, and suppresses partial discharge by making the surface potential of the insulating layer uniform.
  • the external semiconductive layer needs to be in close contact with the insulating layer by filling the irregularities on the surface of the insulating layer from the viewpoint of suppressing partial discharge.
  • the external semiconductive layer is peeled off at the time of processing the end of the power transmission cable, the external semiconductive layer is required to be easily peelable from the insulating layer without damaging the insulating layer. Therefore, an external semiconductive layer that is in good contact with the insulating layer and can be easily peeled off from the insulating layer at the time of terminal processing of the power transmission cable is desired.
  • thermoplastic resin having appropriate adhesiveness should be used without excessively adhering to the resin forming the insulating layer. Is required.
  • Patent Document 1 discloses that as a base resin of a semiconductive resin composition for forming an external semiconductive layer, an ethylene-vinyl acetate copolymer (EVA) containing 20 to 45% by mass of vinyl acetate, A base polymer comprising 10 to 40% by mass of a blend polymer such as a crosslinked ethylene-propylene copolymer has been proposed.
  • EVA ethylene-vinyl acetate copolymer
  • the base polymer described in Patent Document 1 since the base polymer described in Patent Document 1 has high adhesion to the resin forming the insulating layer, the external semiconductive layer formed of the semiconductive resin composition described in Patent Document 1 can be easily formed from the insulating layer. May not be peeled off. Therefore, the power cable disclosed in Patent Document 1 has a problem that terminal processability is low.
  • an object of the present invention is to provide a power transmission cable excellent in terminal processability.
  • the present invention provides the following power transmission cable.
  • An ethylene-propylene rubber comprising a conductor, an insulating layer provided on the outer periphery of the conductor, and an external semiconductive layer provided on the outer periphery of the insulating layer, wherein the insulating layer is crosslinked with a peroxide
  • the power transmission cable which consists of a semiconductive resin composition contained as.
  • the power transmission cable according to [1], wherein the crosslinking agent having a different crosslinking system from the peroxide is an amine.
  • the inner semiconductive layer is made of a semiconductive resin composition containing ethylene propylene rubber as a base resin.
  • a power transmission cable includes a conductor, an insulating layer provided on an outer periphery of the conductor, and an external semiconductive layer provided on an outer periphery of the insulating layer.
  • the ethylene propylene rubber comprising an insulating resin composition containing an ethylene propylene rubber crosslinked with an oxide as a base resin, wherein the outer semiconductive layer is crosslinked with a crosslinking agent having a different crosslinking system from the peroxide And a semiconductive resin composition containing a resin having a different polarity as a base resin.
  • FIG. 1 is a cross-sectional view showing an example of a power transmission cable according to an embodiment of the present invention.
  • a power transmission cable 1 according to an embodiment of the present invention includes a conductor 10, an inner semiconductive layer 11 provided on the outer periphery of the conductor 10, an insulating layer 12 provided on the outer periphery of the inner semiconductive layer 11, and an insulating layer.
  • 12 is provided with an outer semiconductive layer 13 provided on the outer periphery of 12, a shield layer 14 provided on the outer periphery of the outer semiconductive layer 13, and an outer cover layer 15 provided on the outer periphery of the shield layer 14.
  • Conductor 10 As the conductor 10, for example, a copper wire made of low-oxygen copper, oxygen-free copper, or the like, a copper alloy wire, another metal wire made of silver, or the like, or a stranded wire obtained by twisting these wires can be used.
  • the outer diameter of the conductor 10 can be appropriately changed according to the application of the power transmission cable 1.
  • the power transmission cable 1 preferably includes an internal semiconductive layer 11 between the conductor 10 and the insulating layer 12.
  • the internal semiconductive layer 11 is provided so as to cover the outer periphery of the conductor 10.
  • the internal semiconductive layer 11 is provided in close contact with the insulating layer 12, and fills the unevenness on the inner surface of the insulating layer 12 to suppress partial discharge.
  • the thickness of the internal semiconductive layer 11 is not less than 0.3 mm and not more than 3 mm, for example.
  • the inner semiconductive layer 11 can be formed of, for example, a conventionally known semiconductive resin composition.
  • the semiconductive resin composition forming the internal semiconductive layer 11 contains, for example, a base resin and a conductivity imparting agent.
  • the base resin it is preferable to use a resin having good adhesion to a resin forming the insulating layer 12 described later.
  • the insulating layer 12 is formed of ethylene propylene rubber, the same ethylene propylene rubber may be used as the base resin for forming the internal semiconductive layer 11.
  • the same conductivity-imparting agent as used in the semi-conductive resin composition constituting the outer semi-conductive layer 13 described later can be used.
  • the semiconductive resin composition forming the internal semiconductive layer 11 may contain other additives such as a cross-linking agent, a cross-linking aid, and an anti-aging agent as necessary.
  • the semiconductive resin composition can be formed, for example, by mixing a base resin, a conductivity imparting agent, and other additives and kneading while heating.
  • the order of adding each component is not particularly limited.
  • the kneading can be performed simultaneously or sequentially using a batch kneader such as a mixing roll, a Banbury mixer, a Brabender plastograph, a pressure type kneader, or a single-screw or twin-screw extruder.
  • the heating temperature at the time of kneading is not less than the melting point of the base resin.
  • the insulating layer 12 is an electrical insulating layer provided so as to cover the outer periphery of the internal semiconductive layer 11.
  • the thickness of the insulating layer 12 is, for example, 3 mm or more and 30 mm or less.
  • the resin used for the insulating layer 12 does not excessively adhere to the resin forming the outer semiconductive layer 13 described later.
  • an ethylene propylene rubber crosslinked with a peroxide is good, and the insulating layer 12 is made of an insulating resin composition containing an ethylene propylene rubber crosslinked with a peroxide as a base resin.
  • Ethylene propylene rubber is a highly insulating rubber among various rubbers and is suitable as an insulating material for high voltage.
  • the peroxide for example, an organic peroxide is suitable.
  • the base resin may contain a resin other than the ethylene propylene rubber cross-linked with the peroxide within the range in which the effects of the present invention are exerted, but the ethylene propylene rubber cross-linked with the peroxide is contained in the base resin. It is preferable to contain 90% by mass or more, more preferably 95% by mass or more, and still more preferably 98% by mass or more.
  • the insulating resin composition forming the insulating layer 12 may contain other additives as necessary.
  • additives crosslinking aids, anti-aging agents, lubricants, operation oils, anti-ozone agents, UV inhibitors, flame retardants, fillers, antistatic agents, anti-tacking agents and the like can be used.
  • the insulating resin composition can be formed, for example, by mixing a base resin and other additives and kneading while heating.
  • the order of adding each component is not particularly limited.
  • the kneading can be performed simultaneously or sequentially using a batch kneader such as a mixing roll, a Banbury mixer, a Brabender plastograph, a pressure type kneader, or a single-screw or twin-screw extruder.
  • the heating temperature at the time of kneading is not less than the melting point of the base resin.
  • the external semiconductive layer 13 is provided so as to cover the outer periphery of the insulating layer 12.
  • the external semiconductive layer 13 is used to fill the unevenness on the outer surface of the insulating layer 12 and suppress partial discharge.
  • the thickness of the external semiconductive layer 13 is not less than 0.3 mm and not more than 3 mm, for example.
  • the outer semiconductive layer 13 is formed of a semiconductive resin composition containing a base resin and a conductivity imparting agent.
  • a base resin a resin having a polarity different from that of the base resin (ethylene propylene rubber) forming the insulating layer 12 is used.
  • the cross-linking systems of the base resin used for the external semiconductive layer 13 and the base resin used for the insulating layer 12 need to be different cross-linking systems. That is, the outer semiconductive layer 13 is made of a semiconductive resin composition containing, as a base resin, a resin having a polarity different from that of ethylene propylene rubber, which is crosslinked with a crosslinking agent having a different crosslinking system from that of peroxide.
  • the adhesion between the outer semiconductive layer 13 and the insulating layer 12 can be suppressed to some extent by using resins having the same polarity by using resins having different polarities, but it is still insufficient.
  • resins having different polarities have the same crosslinking system, it is difficult to suppress the adhesion, and as a result of various studies, it has been found that the adhesion can be improved by changing the crosslinking system.
  • cross-linking agent having a different cross-linking system from the above peroxide various cross-linking agents can be used, but amine is preferred.
  • amine for example, diamine is preferable.
  • the resin having a polarity different from that of the ethylene propylene rubber contained in the semiconductive resin composition is not particularly limited, but ethylene acrylic rubber or ethylene-vinyl acetate copolymer is preferable.
  • the base resin may contain a resin other than a resin having a polarity different from that of the ethylene-propylene rubber, which is crosslinked with a crosslinking agent having a crosslinking system different from that of the peroxide within the range in which the effects of the present invention are exhibited.
  • the base resin preferably contains 90% by mass or more, more preferably 95% by mass or more, of a resin having a polarity different from that of ethylene propylene rubber, which is crosslinked with a crosslinking agent having a different crosslinking system from the peroxide.
  • it is more preferably 98% by mass or more.
  • the semiconductive resin composition forming the external semiconductive layer 13 may contain a conductivity imparting agent.
  • the conductivity imparting agent imparts conductivity to the base resin of the outer semiconductive layer 13.
  • conductive carbon can be used as the conductivity imparting agent.
  • Conductive carbon has characteristics such as a small particle diameter, a large specific surface area, a large structure (particle aggregate structure), and a small amount of surface compounds.
  • the conductive carbon can impart conductivity to the resin with a small addition amount. Therefore, according to the conductive carbon, an increase in the viscosity of the semiconductive resin composition due to its addition can be suppressed, and a decrease in the extrusion moldability of the semiconductive resin composition can be suppressed.
  • the conductive carbon conventionally known carbons such as furnace black, acetylene black, and ketjen black can be used.
  • conductive carbon may be used individually by 1 type, or may use 2 or more types together.
  • the content of the conductivity-imparting agent is preferably 40 parts by mass or more and 80 parts by mass or less, and 45 parts by mass or more and 75 parts by mass or less with respect to 100 parts by mass of the base resin of the external semiconductive layer 13. More preferably, it is more preferably 50 parts by mass or more and 70 parts by mass or less.
  • conductivity may be imparted to the external semiconductive layer 13 and the volume resistance value of the external semiconductive layer 13 may be, for example, 10 2 ⁇ ⁇ cm to 10 5 ⁇ ⁇ cm. it can.
  • the content is 80 parts by mass or less, an increase in the viscosity of the semiconductive resin composition and a decrease in the extrusion moldability of the semiconductive resin composition due to the increase in viscosity can be suppressed.
  • the semiconductive resin composition forming the external semiconductive layer 13 may contain other additives as necessary.
  • additives crosslinking aids, anti-aging agents, lubricants, operation oils, anti-ozone agents, UV inhibitors, flame retardants, fillers, antistatic agents, anti-tacking agents and the like can be used.
  • the above-described semiconductive resin composition can be formed, for example, by mixing a base resin, a conductivity imparting agent, and other additives and kneading while heating.
  • the order of adding each component is not particularly limited.
  • the kneading can be performed simultaneously or sequentially using a batch kneader such as a mixing roll, a Banbury mixer, a Brabender plastograph, a pressure type kneader, or a single-screw or twin-screw extruder.
  • the heating temperature at the time of kneading is not less than the melting point of the base resin.
  • a shield layer (also referred to as a shielding layer) 14 is provided so as to cover the outer periphery of the external semiconductive layer 13.
  • the shield layer 14 shields noise generated when a voltage is applied to the conductor 10.
  • the shield layer 14 is formed by weaving a plurality of strands such as an annealed copper wire, for example.
  • An outer cover layer (also called a sheath) 15 is provided so as to cover the outer periphery of the shield layer 14.
  • the jacket layer 15 is an electrical insulating layer that covers and protects the conductor 10, the insulating layer 12, and the like.
  • the jacket layer 15 can be formed of a conventionally known resin composition, such as natural rubber, butyl rubber, halogenated butyl rubber, ethylene propylene rubber, chloroprene rubber, styrene butadiene rubber, nitrile rubber, chlorosulfonated polyethylene, chlorinated polyethylene, It is formed by extruding a rubber such as epichlorohydrin rubber, acrylic rubber, silicone rubber, fluorine rubber, urethane rubber or the like to which a crosslinking agent or the like is added.
  • a rubber such as epichlorohydrin rubber, acrylic rubber, silicone rubber, fluorine rubber, urethane rubber or the like to which a crosslinking agent or the like is added.
  • a conductor 10 made of a wire such as copper is prepared.
  • the semiconductive resin composition for the internal semiconductive layer 11 is extruded and molded by an extruder so as to cover the outer periphery of the conductor 10, thereby forming the internal semiconductive layer 11 having a predetermined thickness.
  • crosslinking the internal semiconductive layer 11 it can carry out by a conventionally well-known method.
  • an organic peroxide is contained in the semiconductive resin composition for the internal semiconductive layer 11, and the internal semiconductive layer 11 is heated to a high temperature (140 ° C. or more and 190 ° C. The following is carried out by exposing to high pressure (1.3 MPa) steam for 15 minutes.
  • the insulating resin composition is extruded and molded so as to cover the outer periphery of the inner semiconductive layer 11 by, for example, an extruder, and the insulating layer 12 having a predetermined thickness is formed.
  • the method for crosslinking the insulating layer 12 can be performed in the same manner as the internal semiconductive layer 11.
  • a peroxide is used as the crosslinking agent.
  • an insulating resin composition in which 1 part by mass or more and 3 parts by mass or less (preferably 1.5 parts by mass or more and 2.5 parts by mass or less) of peroxide is added to 100 parts by mass of ethylene propylene rubber.
  • the above-described semiconductive resin composition for the external semiconductive layer 13 is extruded and molded by an extruder so as to cover the outer periphery of the insulating layer 12, and the external semiconductive layer 13 having a predetermined thickness is formed.
  • the method of crosslinking the outer semiconductive layer 13 can be carried out in the same manner as the inner semiconductive layer 11, but as the crosslinking agent, the aforementioned crosslinking agent having a different crosslinking system from the peroxide is used.
  • 100 parts by mass of the above-mentioned resin having a polarity different from that of ethylene propylene rubber is 0.5 parts by mass or more and 3 parts by mass or less (preferably 1 to 2 parts by mass) of the above-mentioned crosslinking agent having a different crosslinking system from peroxide. .5 parts by mass or less) is used.
  • a shield layer 14 is formed by winding, for example, a copper tape or an annealed copper wire so as to cover the outer periphery of the external semiconductive layer 13. Then, the polyvinyl chloride resin composition is extruded and molded so as to cover the outer periphery of the shield layer 14 to form the jacket layer 15 having a predetermined thickness. Thereby, the power transmission cable 1 which concerns on this embodiment can be obtained.
  • the internal semiconductive layer 11, the insulating layer 12, and the external semiconductive layer 13 are formed by sequentially extruding and molding the resin composition, but the semiconductive resin for the internal semiconductive layer 11 is formed.
  • the composition, the insulating resin composition for the insulating layer 12 and the semiconductive resin composition for the external semiconductive layer 13 may be extruded and molded simultaneously to form three layers.
  • the internal semiconductive layer 11 is formed by extruding a semiconductive resin composition.
  • a semiconductive cloth tape obtained by applying conductive butyl rubber to a base cloth made of Sufu is wound. You may form by.
  • a semiconductive resin composition for an internal semiconductive layer was prepared. Specifically, 40 parts by weight or more and 80 parts by weight or less of a conductivity imparting agent is added to 100 parts by weight of ethylene propylene rubber, an organic peroxide is added, an additive such as an antioxidant is added, and a Banbury mixer is used. A semiconductive resin composition was prepared by kneading.
  • an insulating resin composition for the insulating layer was prepared. Specifically, the insulating resin composition was prepared by kneading the components for the insulating layer shown in the Examples and Comparative Examples in Table 1 with a Banbury mixer.
  • a semiconductive resin composition for the external semiconductive layer was prepared. Specifically, the semiconductive resin composition was prepared by kneading the components for the external semiconductive layer shown in the Examples and Comparative Examples of Table 1 with a Banbury mixer.
  • a power transmission cable for simulation simulating a power transmission cable was produced as follows. Extrusion in which each component of the semiconductive resin composition for the internal semiconductive layer, the insulating resin composition for the insulating layer, and the semiconductive resin composition for the external semiconductive layer prepared above was maintained at 90 ° C. Supplied to the machine. Thereafter, on the outer periphery of a copper wire (cross-sectional area 95 mm 2 ) as a conductor, three layers are formed so that the thickness of the internal semiconductive layer is 1 mm, the thickness of the insulating layer is 9 mm, and the thickness of the external semiconductive layer is 1 mm. Co-extruded. Subsequently, by cross-linking each extruded component, an evaluation power transmission cable in which an inner semiconductive layer, an insulating layer, and an outer semiconductive layer were laminated in this order on the outer periphery of the conductor was produced.
  • the adhesion of the external semiconductive layer was evaluated by the peel strength when the external semiconductive layer was peeled from the insulating layer.
  • the evaluation power transmission cable was vertically divided by a cutter to produce three test pieces having a width of about 10 mm and a length of about 15 cm.
  • a peel test was performed on each test piece using a shopper type tensile tester, and the peel strength when the external semiconductive layer was peeled from the insulating layer at a tensile speed of 250 mm / min was measured. In this example, the peel strength was set to 20 N / 10 mm or less. At this level, the external semiconductive layer itself is not destroyed or the insulating layer is not destroyed when the external semiconductive layer is peeled off.
  • the electrical characteristics of the external semiconductive layer were evaluated by the volume resistivity of the external semiconductive layer. Specifically, a test piece having a length of 120 mm, a width of 20 mm, and a thickness of 1 mm was prepared and measured with reference to the Japan Rubber Association standard SRIS2301 (1969) conductive rubber and plastic volume resistivity test method. If the volume resistivity of the external semiconductive layer is 10 2 ⁇ ⁇ cm or more and 10 5 ⁇ ⁇ cm or less, partial discharge generated in the power transmission cable can be suppressed.
  • the base resin of the insulating layer is ethylene propylene rubber, and the base resin of the outer semiconductive layer is ethylene acrylic rubber, but unlike the cross-linking system defined in the present invention, Since the cross-linking system of the base resin and the cross-linking system of the base resin of the outer semiconductive layer are the same peroxide system, the peel strength is too high.
  • the base resin of the insulating layer is ethylene propylene rubber and the base resin of the outer semiconductive layer is an ethylene-vinyl acetate copolymer. Unlike the cross-linking system defined in the present invention, the insulating resin Since the crosslinking system of the base resin of the layer and the crosslinking system of the base resin of the outer semiconductive layer are the same peroxide system, the peel strength is too high.
  • this invention is not limited to the said embodiment and Example, Various deformation

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Abstract

L'invention concerne un câble de transmission d'énergie permettant une excellente préparation d'extrémité de câble. Le câble de transmission d'énergie (1) comporte un conducteur (10), une couche d'isolation (12) disposée sur la périphérie externe du conducteur (10), et une couche semi-conductrice externe (13) disposée sur la périphérie externe de la couche d'isolation (12). La couche d'isolation (12) comprend une composition de résine d'isolation qui comprend, en tant que résine de base, un caoutchouc d'éthylène-propylène réticulé par peroxyde, et la couche semi-conductrice externe (13) comprend une composition de résine semi-conductrice qui comprend, en tant que résine de base, une résine qui a une polarité différente de celle du caoutchouc d'éthylène-propylène et qui est réticulée avec un agent de réticulation ayant un système de réticulation différent de celui du peroxyde.
PCT/JP2016/061006 2016-04-04 2016-04-04 Câble de transmission d'énergie WO2017175270A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201680044461.6A CN107924739B (zh) 2016-04-04 2016-04-04 输电电缆
PCT/JP2016/061006 WO2017175270A1 (fr) 2016-04-04 2016-04-04 Câble de transmission d'énergie
JP2018510023A JP6859322B2 (ja) 2016-04-04 2016-04-04 送電ケーブルの製造方法

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Application Number Priority Date Filing Date Title
PCT/JP2016/061006 WO2017175270A1 (fr) 2016-04-04 2016-04-04 Câble de transmission d'énergie

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WO2022249265A1 (fr) * 2021-05-25 2022-12-01 三菱電機株式会社 Fil isolé et bobine utilisant ledit fil isolé

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JP7115333B2 (ja) * 2019-01-22 2022-08-09 日立金属株式会社 ケーブル及びその製造方法

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JPS62501201A (ja) * 1984-12-22 1987-05-14 ビ−ピ−ケミカルズ　リミテツド 絶縁ケーブルおよびその製造方法
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JPS61133505A (ja) * 1984-11-30 1986-06-20 日立電線株式会社 難燃性電気絶縁物の製造方法
JPS62501201A (ja) * 1984-12-22 1987-05-14 ビ−ピ−ケミカルズ　リミテツド 絶縁ケーブルおよびその製造方法
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WO2022249265A1 (fr) * 2021-05-25 2022-12-01 三菱電機株式会社 Fil isolé et bobine utilisant ledit fil isolé

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