WO2017173704A1 - 显示背光用金属线栅增亮膜及其制备方法 - Google Patents

显示背光用金属线栅增亮膜及其制备方法 Download PDF

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Publication number
WO2017173704A1
WO2017173704A1 PCT/CN2016/082307 CN2016082307W WO2017173704A1 WO 2017173704 A1 WO2017173704 A1 WO 2017173704A1 CN 2016082307 W CN2016082307 W CN 2016082307W WO 2017173704 A1 WO2017173704 A1 WO 2017173704A1
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photoresist
grating structure
grating
thin film
preparation
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PCT/CN2016/082307
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English (en)
French (fr)
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崔宏青
查国伟
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武汉华星光电技术有限公司
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Priority to US15/111,737 priority Critical patent/US20180105921A1/en
Publication of WO2017173704A1 publication Critical patent/WO2017173704A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G02F1/133548—Wire-grid polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Definitions

  • the present invention relates to the technical field of displays, and in particular to a metal wire grid brightness enhancement film for displaying backlights and a preparation method thereof.
  • polarizers are TFT A core technology of LCD display, while the selective absorption and scattering, absorption, etc. of the conventional absorption type polarizer make the transmittance of light only about 42%, and the backlight utilization is greatly reduced.
  • a commonly used method is to add a brightness enhancement film structure between the backlight and the cell, such as a reflective polarizing film DBEF (Dual-Brightness).
  • Enhance Film a metal wire grid, etc.
  • DBEF is a reflective polarizer that can selectively circulate the polarized light by selectively reflecting the light of the backlight system so that it is not absorbed by the lower polarizer of the LCD, but due to the existing DBEF
  • the extinction ratio is not high and still needs to be used with an absorbing polarizer.
  • the metal wire grid is usually prepared by microelectronic lithography combined with dry etching, and has a high extinction ratio. It is an ideal reflective polarizer, and a high gain coefficient can be obtained by combining with a backlight reflection sheet.
  • the uniformity of the existing etching process poses a certain challenge to the yield of large-scale industrial production, and the preparation process is complicated. In particular, the etching process has congenital in the preparation of planar complex patterns such as triangular prisms, trapezoidal prisms and the like. Defects.
  • an embodiment of the present invention provides a method for preparing a metal wire grid brightness enhancement film for a backlight, the method comprising:
  • the photoresist grating structure has a plurality of trapezoidal cross sections, and the metal thin film is formed on the top surfaces of the plurality of trapezoids and the side surfaces on the same side by oblique deposition.
  • the photoresist grating structure has a plurality of cross sections arranged at intervals, and the metal thin film is formed on the side of the same side of the plurality of triangles by oblique deposition.
  • the cross section of the photoresist grating structure is a plurality of spaced apart rectangles, and the metal thin film is formed on the top surface of the plurality of rectangles and the substrate of the rectangular spacer region, wherein The top surfaces of the plurality of rectangles and the metal thin film on the rectangular spacer substrate are not interconnected.
  • the photoresist grating structure has a size period of 100-300 nm, a grating width of 100-200 nm, and a thickness of 100-200 nm.
  • the photoresist grating structure has a size period of 100-200 nm, a grating width of 60-70 nm, and a thickness of 30-50 nm.
  • the present invention also provides a metal wire grid brightness enhancement film for displaying a backlight, which is prepared by the method described in the above embodiments.
  • FIG. 2 is a schematic flow chart showing a preferred embodiment of a method for preparing a metal wire grid brightness enhancing film for backlight according to the present invention
  • Figure 3 is a schematic view showing the shapes of three kinds of grating patterns and an imprinting mold
  • FIG. 4 is a schematic structural view of a metal thin film formed corresponding to the photoresist pattern in FIG. 3;
  • FIG. 5 is a graph showing the trend of the FDTD simulation Tp and Rs of the resist pattern and the metal thin film structure of FIG. 4 as a function of wavelength;
  • FIG. 6 is a schematic view showing a fourth photoresist pattern and a metal thin film structure
  • Figure 9 is a graph showing the polarization optical characteristics of an optimized two-layer metal wire grid
  • FIG. 10 is a graph of polarization optical characteristics optimized for duty ratio of the double-layer metal wire grid of FIG. 9;
  • Figure 11 is a graph showing the optimized polarization optical characteristics for the photoresist thickness h2 of the double-layer metal wire grid of Figure 9.
  • FIG. 1 is a schematic diagram of a backlight brightening structure in which a brightness enhancement film is combined with a backlight reflection sheet to obtain a brightness enhancement structure having a high gain coefficient.
  • FIG. 2 is a schematic flow chart of a preferred embodiment of a method for preparing a metal wire grid brightness enhancement film for backlight according to the present invention.
  • the preparation method includes, but is not limited to, the following steps.
  • step S100 a photoresist is coated on the surface of the substrate.
  • a flexible substrate is selected as the substrate of the metal wire grid, wherein the flexible substrate is usually made of a flexible material such as polymer or PET, which is convenient to be combined with the existing roll-to-roll process, and has a very high Good light transmission, can be used for TFT-LCD display.
  • the photoresist should have a low viscosity, which is easy to separate from the roll-to-roll imprinting mold, and has good mechanical properties after curing, and has sufficient supporting force.
  • a roll-to-roll nanoimprint process is preferably used to prepare a pattern on the surface of the photoresist by an imprint mold, which has the advantage of facilitating mass production at a large scale while having good cycle repeatability.
  • the method of curing treatment is usually light irradiation or heat treatment.
  • the photoresist grating structure is a periodic arrangement of an air gap and a photoresist, wherein the photoresist cross-section pattern is a rectangle, a trapezoid or a triangle, etc., and is not limited to the shape structure in the embodiment, and may be in various structural forms.
  • the shape of the grating pattern and the imprinting mold is as shown in FIG. Only the photoresist grating structure of the three cross-sectional patterns is shown in FIG.
  • the grating period (the distance at which the grating structure is repeated once, the L is the grating period, the same below) and the grating width have different application ranges for different grating structures, such as a triangular or trapezoidal photoresist grating period of about 100-300.
  • Nm, grating width (marked D in the figure, the same below) 100-200nm, thickness (marked H in the figure, the same below) 100-200nm; and rectangular grating period is 40-100 Nm, the grating width is 10-50nm, and the thickness is 40-200nm.
  • the specific design needs to comprehensively consider the transmission and reflectivity of the two polarized lights with reference to the backlight collection efficiency.
  • the thickness of the metal film is 10-100 Nm
  • the material of the metal film should have a relatively large imaginary part of the refractive index, so that the metal wire grid has better polarization selection characteristics.
  • the material of the preferred metal thin film is Al or Ag or the like.
  • the structure of the backlight brightness enhancement film combined with the metal grating and the reflective layer is as shown in FIG. 1 , wherein the brightness enhancement film is a metal grating, and the relative position of the grating surface of the metal grating relative to the backlight is not limited, and the front side or the back side of the grating may face the backlight.
  • the schemes all have good reflective polarization characteristics.
  • 0.9) 66.5%, which is about 58% higher than that of a conventional absorption type polarizer (the light transmittance of a general absorption type polarizer is about 42%).
  • the embodiment of the present invention further provides a grating brightness enhancement film structure as shown in FIG. 6.
  • the cross section of the photoresist grating structure is a plurality of spaced apart rectangles, and the metal film is formed on the top surface of the plurality of rectangles and the substrate of the rectangular spacing area, wherein the top surface of the plurality of rectangles and the rectangular spacing area are The metal films on the substrate are not interconnected to avoid affecting the P state transmittance.
  • the brightness enhancement film grating structure of this structure is also called double-layer metal wire grid, and the analysis of its structural optical performance is also completed by the finite difference time domain (FDTD) algorithm, wherein the structure of the double-layer metal wire grid As shown in FIG. 6, the period of the wire grid is defined as p, the width of the photoresist grating is w, and the thicknesses of the photoresist and the metal layer are h2 and h1, respectively.
  • FDTD finite difference time domain
  • the double-layer metal wire grid comprises a flexible substrate (ie, a substrate), a photoresist grating, and a metal film on the top and bottom of the photoresist grating, and the structure is as shown in FIG. 6. Please refer to FIG. 7 together.
  • FIG. 7 is an embossing process of the photoresist grating structure.
  • Figure 8 is a graph showing the polarization optical characteristics of a double-layer metal wire grid.
  • the dotted lines indicate the P-state transmittance and the S-state reflectance, respectively, and the solid line indicates the overall transmittance as the backlight brightness enhancement film backlight.
  • the S-state reflectivity increases in the visible light band with increasing wavelength, and the lowest is 0.1, so that the overall transmittance is lower than the transmittance of the absorbing polarizer in the short-band, and thus there is no brightness enhancement film effect.
  • FIG. 10 is a graph showing the polarization optical characteristics of the double-layer metal wire grid of FIG. 9 after the duty ratio is optimized, the duty ratio is 0-1, and the wavelength of 550 nm is taken as an example. As shown in FIG. 10, when the duty ratio is At 0.6, the light gain of the brightness enhancement film at 550 nm reaches a maximum of about 75%, and the gain reaches about 78%.
  • the technical solution in this embodiment (4) has the advantage of relatively high extinction, and can be used as a polarizer having a high extinction ratio in addition to the backlight brightness enhancement film described in this patent.
  • the present invention provides a method for preparing a metal wire grid brightness enhancing film for a backlight, and a nano-sized photoresist grating structure is prepared by a roll-to-roll nanoimprint process, and then the cured photoresist grating structure is formed.
  • the metal film with different cross-sectional shapes is formed, which has the advantages of simple preparation process, material saving and cost, and the nano-imprinted substrate is suitable for preparing a metal wire grid brightness enhancement film structure with various complicated patterns, thereby improving the versatility of the process.
  • the optical gain of the backlight system of the TFT-LCD display device can also be improved. Through the structural optimization, the P-state transmittance is improved while maintaining a high S-state reflectivity.
  • the embodiment of the present invention further provides a metal wire grid brightness enhancement film for backlight, which is prepared by the method of the above embodiment.
  • a metal wire grid brightness enhancement film for backlight which is prepared by the method of the above embodiment.

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
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Abstract

一种显示背光用金属线栅增亮膜及其制备方法，该方法包括：在基板表面涂覆光刻胶层(S100)；通过纳米压印工艺在光刻胶层上形成纳米尺寸的光刻胶光栅结构，并进行固化处理(S110)；在固化后的光刻胶光栅结构上形成金属薄膜(S120)。该方法通过卷对卷纳米压印工艺制备纳米尺寸的光刻胶光栅结构，然后在固化的光刻胶光栅结构上形成不同截面形状的金属薄膜，具有制备流程简单与节约材料和成本的优点。

Description

显示背光用金属线栅增亮膜及其制备方法
【技术领域】
本发明涉及显示器的技术领域，具体是涉及一种显示背光用金属线栅增亮膜及其制备方法。
【背景技术】
偏光片的使用是TFT LCD显示的一项核心技术，而传统吸收型偏振片对于偏振态的选择性透过与散射、吸收等使得光的透过率仅有42%左右，背光利用率大大降低。目前常用的方法是在背光与Cell之间添加增亮膜结构，如反射式偏光增亮膜DBEF（Dual-Brightness Enhance Film）、金属线栅等，其中DBEF是一种反射偏光片，通过选择性反射背光系统的光，使其不被LCD的下偏光片所吸收，能够循环利用偏振光，但是由于现有的DBEF的消光比不高，仍然需要搭配吸收型偏光片使用。而金属线栅通常采用微电子光刻结合干刻的方法制备，具有很高的消光比，是理想的反射型偏光片，通过与背光反射片相结合能够获得很高的增益系数。但是现有刻蚀工艺的均匀度对于大规模工业生产的良率构成一定的挑战，同时制备流程比较复杂，特别地，刻蚀工艺在制备平面复杂图形如三棱柱，梯形棱柱等结构方面具有先天的缺陷。
【发明内容】
本发明实施例提供一种显示背光用金属线栅增亮膜及其制备方法，以解决现有技术中增亮膜的制备流程复杂以及产品无法满足背光显示要求的技术问题。
为解决上述问题，本发明实施例提供了一种显示背光用金属线栅增亮膜的制备方法，所述方法包括：
在基板表面涂覆光刻胶层；
通过纳米压印工艺在所述光刻胶层上形成纳米尺寸的光刻胶光栅结构，并进行固化处理；
在所述固化后的光刻胶光栅结构上形成金属薄膜。
根据本发明一优选实施例，所述光刻胶光栅结构的截面为多个间隔设置的矩形，所述金属薄膜通过倾斜沉积法形成于所述多个矩形的顶面以及同一侧的侧面上。
根据本发明一优选实施例，所述光刻胶光栅结构的截面为多个间隔设置的梯形，所述金属薄膜通过倾斜沉积法形成于所述多个梯形的顶面以及同一侧的侧面上。
根据本发明一优选实施例，所述光刻胶光栅结构的截面为多个间隔设置的三角形，所述金属薄膜通过倾斜沉积法形成于所述多个三角形同一侧的侧面。
根据本发明一优选实施例，所述光刻胶光栅结构的截面为多个间隔设置的矩形，所述金属薄膜形成于所述多个矩形的顶面以及矩形间隔区域的基板上，其中，位于所述多个矩形的顶面以及矩形间隔区域基板上的金属薄膜之间不互联。
根据本发明一优选实施例，所述光刻胶光栅结构的尺寸周期为40-100nm，光栅宽度为10-50nm，厚度为40-200nm。
根据本发明一优选实施例，所述光刻胶光栅结构的尺寸周期为100-300nm，光栅宽度为100-200nm，厚度为100-200nm。
根据本发明一优选实施例，所述光刻胶光栅结构的尺寸周期为100-200nm，光栅宽度为60-70nm，厚度为30-50nm。
根据本发明一优选实施例，所述基板为柔性基板；所述金属薄膜的材料为铝或者银；所述固化处理为光照或者加热；所述金属薄膜的形成方法为蒸镀或者溅射。
为解决上述技术问题，本发明还提供一种显示背光用金属线栅增亮膜，所述金属线栅增亮膜通过上述实施例中所述的方法制备而成。
相对于现有技术，本发明提供的显示背光用金属线栅增亮膜及其制备方法，通过卷对卷纳米压印工艺制备纳米尺寸的光刻胶光栅结构，然后在固化的光刻胶光栅结构上形成不同截面形状的金属薄膜，具有制备流程简单与节约材料和成本的优点，同时纳米压印的基板选择适用于制备多种复杂图形的金属线栅增亮膜结构，提高工艺的通用性。另外，还可以提高TFT-LCD显示器件的背光系统光学增益。通过结构优化实现了P态穿透率的提升，同时保持了较高的S态反射率。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是背光增亮结构的示意图；
图2是本发明显示背光用金属线栅增亮膜的制备方法一优选实施例的流程示意图；
图3是三种光栅图形与压印模具的形状示意图；
图4是对应图3中光刻胶图形形成的金属薄膜结构示意图；
图5是对应图4中光刻胶图形及金属薄膜结构的FDTD模拟Tp、Rs随波长的变化趋势曲线图；
图6是第四种光刻胶图形及金属薄膜结构的示意图；
图7是光刻胶光栅结构的压印过程示意图；
图8是一种双层金属线栅的偏振光学特性曲线图；
图9是一种优化的双层金属线栅的偏振光学特性曲线图；
图10是针对图9中双层金属线栅的占空比优化后的偏振光学特性曲线图；以及
图11是针对图9所述双层金属线栅的光刻胶厚度h2的优化后的偏振光学特性曲线图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
请参阅图1，图1是背光增亮结构的示意图，其中，增亮膜通过与背光反射片相结合能够获得增益系数很高的增亮结构。
请参阅图2，图2是本发明显示背光用金属线栅增亮膜的制备方法一优选实施例的流程示意图，该制备方法包括但不限于以下步骤。
步骤S100，在基板表面涂覆光刻胶。
在步骤S100中，首先，选取一柔性基板作为金属线栅的衬底，其中柔性基板通常为聚合物或者PET等柔性材料制成，便于与现有的卷对卷设备工艺相结合，同时具有很好的透光性，能够用于TFT-LCD显示。另外，光刻胶应该具有较低的黏性，便于与卷对卷的压印模具分离，并且在固化后具有很好的机械性能，具有足够的支撑力。
步骤S110，通过纳米压印工艺在光刻胶层上形成纳米尺寸的光刻胶光栅结构，并进行固化处理。
在该步骤中，优选采用卷对卷纳米压印工艺通过压印模具在光刻胶表面制备图形，其具有利于大规模批量生产的优点，同时具有很好的周期重复性。其中固化处理的方式通常为光照射或者热处理等。
光刻胶光栅结构为空气隙与光刻胶的周期性排布结构，其中光刻胶截面图形为长方形、梯形或者三角形等，并不限于本实施例中的形状结构，可以为多种结构形式，与上述压印模具的形状相关，光栅图形与压印模具的形状如图3所示。图3中仅表示出了三种截面图形的光刻胶光栅结构。
光栅周期（光栅结构重复一次的距离，图中L为光栅周期，下同）与光栅宽度针对不同的光栅结构具有不同的适用范围，如三角形或者梯形结构的光刻胶光栅周期约为100-300 nm，光栅宽度（图中标注D，下同）100-200nm，厚度（图中标注H，下同）100-200nm；而长方形光栅周期为40-100 nm，光栅宽度为10-50nm，厚度为40-200nm，具体设计需要参照背光收集效率综合考虑两种偏振光的透过与反射率。
步骤S120，在固化后的光刻胶光栅结构上形成金属薄膜。
在步骤S120中，金属薄膜的形成方式为指向型倾斜蒸镀或者溅射，也即光栅的基板平面与金属的沉积方向非垂直关系，而且金属沉积的方向具有很好的准直性（平行一致性），如图4所示，图4中箭头表示倾斜蒸镀的指向方向。由于相邻周期光刻胶光栅对蒸镀金属束流的阻挡作用，使得仅在光刻胶光栅的局部形成金属薄膜结构，而且淀积金属的区域与蒸镀的倾斜角度θ及光刻胶光栅的高度相关。针对图3所述不同形状的光刻胶光栅，所获得的金属光栅形状如图四(a)(b)(c)所示，图四(a)中表示光刻胶光栅结构的截面为多个间隔设置的三角形，金属薄膜通过倾斜沉积法形成于多个三角形同一侧的侧面；图四(b)中表示光刻胶光栅结构的截面为多个间隔设置的梯形，金属薄膜通过倾斜沉积法形成于多个梯形的顶面以及同一侧的侧面上；图四(c)中表示光刻胶光栅结构的截面为多个间隔设置的矩形，金属薄膜通过倾斜沉积法形成于多个矩形的顶面以及同一侧的侧面上。
优选地，金属薄膜的厚度为10-100 nm，金属薄膜的材料应该具有比较大的折射率虚部，从而使得金属线栅具有较好的偏振选择特性。优选的金属薄膜的材料为Al或者Ag等。
金属光栅与反射层结合的背光增亮膜结构如图1所示，其中增亮膜为金属光栅，金属光栅的光栅面相对于背光的相对位置不做限定，可以是光栅正面或者反面面对背光源的方案，均具有很好的反射偏光特性。图1中的反射层可以是diffuse reflector（漫反射镜）或者金属镜面反射与四分之一玻片构成的（具体请参考文献“Low Fill‐Factor Wire Grid Polarizers for LCD Backlighting”），此处以后一种情形（金属镜面加四分之一玻片）计算整体的背光出光效率，计算公式为T=0.5Tp*(1+RRs)，其中Tp，R，Rs分别为p光的穿透率，镜面反射率与S光（当光线以非垂直角度穿透光学元件（如分光镜）的表面时，反射和透射特性均依赖于偏振现象。这种情况下，使用的坐标系是用含有输入和反射光束的那个平面定义的。如果光线的偏振矢量在这个平面内，则称为 P偏振，如果偏振矢量垂直于该平面，则称为 S偏振。任何一种输入偏振状态都可以表示为S和P分量的矢量和）反射率，其中R近似取1。
实施例1
通过卷对卷的纳米压印方法制备三角形截面的光刻胶光栅结构，然后通过指向型倾斜蒸镀的方式在三棱柱的一侧面淀积金属。具体结构如图四（a）所示，其中光刻胶光栅周期约为100-300 nm，光栅宽度100-200nm，光栅厚度100-200nm，金属层的厚度为10-100 nm。图5（a）为三角形截面的光刻胶光栅结构通过FDTD模拟Tp、Rs随波长的变化趋势曲线图，其中Rs大于0.9，Tp约为0.7，取最小值T=0.5*0.7*（1+0.9）=66.5%，相对于普通吸收型偏光片（普通吸收型偏光片的光透过率约为42%）增益约58%。
实施例2
通过卷对卷的纳米压印方法制备梯形形截面的光刻胶光栅结构，然后通过指向型倾斜蒸镀的方式在梯形棱柱的顶面和一侧面淀积金属。具体结构如图四（b）所示，其中光刻胶光栅周期约为100-300 nm，光栅宽度100-200nm，光栅厚度100-200nm，金属层的厚度为10-100 nm。图5（b）为梯形形截面的光刻胶光栅结构通过FDTD模拟Tp、Rs随波长的变化趋势曲线图，其中Rs约为0.8，Tp大于0.6，取最小值T=0.5*0.6*（1+0.8）=54%，相对于普通吸收型偏光片增益约29%。
实施例3
通过卷对卷的纳米压印方法制备长方形截面的光刻胶光栅结构，然后通过指向型倾斜蒸镀的方式在顶面和一侧面淀积金属。具体结构如图四（c）所示，其中光刻胶长方形光栅周期为40-100 nm，光栅宽度为10-50 nm，光栅厚度为40-200nm，金属层的厚度为10-100 nm。通过FDTD模拟表明，光栅宽度过大(大于等于60nm)时会导致Tp小于0.5，导致总体光透过率相对于吸收型偏光片无明显优势。图五（c）为长方形截面的光刻胶光栅周期为70nm，光栅宽度为30 nm，金属厚度为10nm时的Tp、Rs随波长的变化趋势曲线图，其中Rs约为0.8，Tp大于0.65，取最小值T=0.5*0.65*（1+0.8）=58.5%，相对于普通吸收型偏光片增益约40%。
实施例4
进一步地，为了提升P态光线的穿透率，同时保持较高的S态反射率，本发明实施例还提供一种图6中所示的光栅增亮膜结构。该实施例中光刻胶光栅结构的截面为多个间隔设置的矩形，金属薄膜形成于多个矩形的顶面以及矩形间隔区域的基板上，其中，位于多个矩形的顶面以及矩形间隔区域基板上的金属薄膜之间不互联，以避免影响P态的穿透率。
该种结构的增亮膜光栅结构又被称为双层金属线栅，而对其结构光学性能的分析，也是采用时域有限差分（FDTD）算法来完成的，其中双层金属线栅的结构如图6所示，定义线栅的周期为p，光刻胶光栅宽度为w，光刻胶与金属层的厚度分别为h2和h1。设定P态穿透率为Tp，S态反射率为Rs，背光反射层设定为全反射层和四分之一玻片组成，反射率为R，其值近似取1，则整个背光系统的穿透率为T=0.5Tp*(1+RRs)= 0.5Tp*(1+Rs)。
其中该双层金属线栅包含柔性基板（即衬底）、光刻胶光栅以及光刻胶光栅顶部与底部的金属薄膜，结构如图6所示。请一并参阅图7，图7是光刻胶光栅结构的压印过程。
该实施例中的双层金属光栅的周期约为100-200 nm，占空比（光刻胶占基板的面积比）为0.5-0.6，光刻胶光栅厚度60-70nm，金属厚度30-50nm，双层金属线栅的S态反射率约为85%，P态透过率约为60%，双层金属线栅背光增亮膜的光学透过率大于55.5%，光学增益相对于吸收型偏光片大于32%。
图8为一种双层金属线栅的偏振光学特性曲线图，具体结构参数为P=200nm，w=100nm， h1=50 nm，h2=140 nm。图中点线分别表示P态透过率和S态反射率，实线表示作为背光增亮膜背光的总体透过率。其中S态反射率在可见光波段波动随波长的增加而增加，最低至0.1，使得总体透过率在短波段低于吸收型偏振片的透过率，因而无增亮膜效果。
图9为一种优化的双层金属线栅的偏振光学特性曲线图，具体结构参数为P=140 nm，w=70 nm， h1=50nm，h2=140nm。图中点线分别表示P态透过率和S态反射率，实线表示作为背光增亮膜背光的总体透过率T。由图可知，S态反射率在全波段大于85%，而P态透过率仅在最低波长380nm时达到最低值60%，而作为背光增亮膜的总体透过率T在全波段大于57%，因而相对于吸收型偏光片至少增益35%。
图10为针对图9中双层金属线栅的占空比优化后的偏振光学特性曲线图，占空比变化为0-1，以550nm波长为例，由图10可知，当占空比为0.6时，550nm处的增亮膜光增益达到最大值75%左右，增益达到78%左右。
图11为针对图9所述双层金属线栅的光刻胶厚度h2的优化后的偏振光学特性曲线图，以550nm波长为例，由图11可知，当h2=90nm时，550nm处的增亮膜光增益达到最大值85%，增益达到102%左右。
该实施例（4）中的技术方案存在着消光比较高的优点，除了用于本专利所述的背光增亮膜之外也可以作为一种对消光比要求很高的偏光片使用。
相对于现有技术，本发明提供的显示背光用金属线栅增亮膜的制备方法，通过卷对卷纳米压印工艺制备纳米尺寸的光刻胶光栅结构，然后在固化的光刻胶光栅结构上形成不同截面形状的金属薄膜，具有制备流程简单与节约材料和成本的优点，同时纳米压印的基板选择适用于制备多种复杂图形的金属线栅增亮膜结构，提高工艺的通用性。另外，还可以提高TFT-LCD显示器件的背光系统光学增益。通过结构优化实现了P态穿透率的提升，同时保持了较高的S态反射率。
进一步地，本发明实施例还提供一种背光用金属线栅增亮膜，该背光用金属线栅增亮膜通过上述实施例的方法制备而成，具体的制备过程，请参阅上述实施例的描述，此处不再赘述。
以上所述仅为本发明的部分实施例，并非因此限制本发明的保护范围，凡是利用本发明说明书及附图内容所作的等效装置或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (20)

  1. 一种显示背光用金属线栅增亮膜的制备方法，其中，所述方法包括：
    在基板表面涂覆光刻胶层，所述基板为柔性基板；
    通过纳米压印工艺在所述光刻胶层上形成纳米尺寸的光刻胶光栅结构，并进行固化处理，所述光刻胶光栅结构的截面为多个间隔设置的矩形或者梯形；
    在所述固化后的光刻胶光栅结构上形成金属薄膜，所述金属薄膜通过倾斜沉积法形成于所述多个矩形的顶面以及同一侧的侧面上。
  2. 一种显示背光用金属线栅增亮膜的制备方法，其中，所述方法包括：
    在基板表面涂覆光刻胶层；
    通过纳米压印工艺在所述光刻胶层上形成纳米尺寸的光刻胶光栅结构，并进行固化处理；
    在所述固化后的光刻胶光栅结构上形成金属薄膜。
  3. 根据权利要求2所述的制备方法，其中，所述光刻胶光栅结构的截面为多个间隔设置的矩形，所述金属薄膜通过倾斜沉积法形成于所述多个矩形的顶面以及同一侧的侧面上。
  4. 根据权利要求2所述的制备方法，其中，所述光刻胶光栅结构的截面为多个间隔设置的梯形，所述金属薄膜通过倾斜沉积法形成于所述多个梯形的顶面以及同一侧的侧面上。
  5. 根据权利要求2所述的制备方法，其中，所述光刻胶光栅结构的截面为多个间隔设置的三角形，所述金属薄膜通过倾斜沉积法形成于所述多个三角形同一侧的侧面。
  6. 根据权利要求2所述的制备方法，其中，所述光刻胶光栅结构的截面为多个间隔设置的矩形，所述金属薄膜形成于所述多个矩形的顶面以及矩形间隔区域的基板上，其中，位于所述多个矩形的顶面以及矩形间隔区域基板上的金属薄膜之间不互联。
  7. 根据权利要求3所述的制备方法，其中，所述光刻胶光栅结构的尺寸周期为40-100nm。
  8. 根据权利要求7所述的制备方法，其中，光栅宽度为10-50nm。
  9. 根据权利要求8所述的制备方法，其中，光栅厚度为40-200nm。
  10. 根据权利要求4所述的制备方法，其中，所述光刻胶光栅结构的尺寸周期为100-300nm。
  11. 根据权利要求10所述的制备方法，其中，光栅宽度为100-200nm。
  12. 根据权利要求11所述的制备方法，其中，光栅厚度为100-200nm。
  13. 根据权利要求5所述的制备方法，其中，所述光刻胶光栅结构的尺寸周期为100-300nm。
  14. 根据权利要求13所述的制备方法，其中，光栅宽度为100-200nm。
  15. 根据权利要求14所述的制备方法，其中，光栅厚度为100-200nm。
  16. 根据权利要求6所述的制备方法，其中，所述光刻胶光栅结构的尺寸周期为100-200nm。
  17. 根据权利要求16所述的制备方法，其中，光栅宽度为60-70nm，厚度为30-50nm。
  18. 根据权利要求2所述的制备方法，其中，所述基板为柔性基板；所述金属薄膜的材料为铝或者银。
  19. 根据权利要求2所述的制备方法，其中，所述固化处理为光照或者加热；所述金属薄膜的形成方法为蒸镀或者溅射。
  20. 一种显示背光用金属线栅增亮膜，其中，所述金属线栅增亮膜通过权利要求2所述的方法制备而成。
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