WO2017169497A1 - 有機電界発光素子 - Google Patents
有機電界発光素子 Download PDFInfo
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- WO2017169497A1 WO2017169497A1 PCT/JP2017/008295 JP2017008295W WO2017169497A1 WO 2017169497 A1 WO2017169497 A1 WO 2017169497A1 JP 2017008295 W JP2017008295 W JP 2017008295W WO 2017169497 A1 WO2017169497 A1 WO 2017169497A1
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- WIPO (PCT)
- Prior art keywords
- group
- substituted
- aromatic
- carbon atoms
- unsubstituted
- Prior art date
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- 125000003118 aryl group Chemical group 0.000 claims abstract description 80
- 150000001875 compounds Chemical class 0.000 claims abstract description 70
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000012044 organic layer Substances 0.000 claims abstract description 20
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 9
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract 4
- 239000010410 layer Substances 0.000 claims description 216
- 125000004432 carbon atom Chemical group C* 0.000 claims description 67
- 239000000463 material Substances 0.000 claims description 53
- 230000000903 blocking effect Effects 0.000 claims description 48
- -1 dibenzofuranyl group Chemical group 0.000 claims description 41
- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims description 38
- 239000002019 doping agent Substances 0.000 claims description 22
- 230000003111 delayed effect Effects 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- 125000004986 diarylamino group Chemical group 0.000 claims description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 claims description 10
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 9
- 125000001153 fluoro group Chemical group F* 0.000 claims description 9
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- 229910052741 iridium Inorganic materials 0.000 claims description 8
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 125000004122 cyclic group Chemical group 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 125000002524 organometallic group Chemical group 0.000 claims description 4
- 229910052762 osmium Inorganic materials 0.000 claims description 4
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- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
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- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 238000006467 substitution reaction Methods 0.000 claims description 3
- 125000005509 dibenzothiophenyl group Chemical group 0.000 claims description 2
- 238000005401 electroluminescence Methods 0.000 claims description 2
- 125000000623 heterocyclic group Chemical group 0.000 abstract description 2
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- 125000001424 substituent group Chemical group 0.000 description 9
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- 238000000295 emission spectrum Methods 0.000 description 8
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- 125000003545 alkoxy group Chemical group 0.000 description 4
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 150000001491 aromatic compounds Chemical class 0.000 description 4
- 125000003710 aryl alkyl group Chemical group 0.000 description 4
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- 239000011230 binding agent Substances 0.000 description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
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- 229940126062 Compound A Drugs 0.000 description 3
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
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- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
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- 230000005284 excitation Effects 0.000 description 3
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- 239000007789 gas Substances 0.000 description 3
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
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- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
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- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
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- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
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- ZEEBGORNQSEQBE-UHFFFAOYSA-N [2-(3-phenylphenoxy)-6-(trifluoromethyl)pyridin-4-yl]methanamine Chemical compound C1(=CC(=CC=C1)OC1=NC(=CC(=C1)CN)C(F)(F)F)C1=CC=CC=C1 ZEEBGORNQSEQBE-UHFFFAOYSA-N 0.000 description 2
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- 125000002252 acyl group Chemical group 0.000 description 2
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- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
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- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/346—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising platinum
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/348—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising osmium
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/371—Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver
Definitions
- the present invention relates to an organic electroluminescence device (hereinafter referred to as an organic EL device), and more particularly, to an organic EL device having an organic layer containing a plurality of compounds.
- Patent Document 1 discloses an organic EL element using a TTF (Triplet-Triplet Fusion) mechanism, which is one of delayed fluorescence mechanisms
- Patent Document 2 uses a TADF (Thermally Activated Delayed Fluorescence) mechanism.
- TTF Triplet-Triplet Fusion
- TADF Thermally Activated Delayed Fluorescence
- Patent Documents 3 to 8 disclose the use of carborane compounds as host materials.
- Patent Document 8 discloses that a specific carborane compound is used as a delayed fluorescent light-emitting material or a biscarbazole compound is used as a delayed fluorescent light-emitting material and a carborane compound is used as a host material in a light-emitting layer.
- a specific carbazole compound is mixed and used as a host material for an organic layer other than a light emitting layer or a light emitting layer.
- an object of the present invention is to provide a practically useful organic EL device having high efficiency and high driving stability while being low in voltage.
- the present invention relates to an organic electroluminescent device in which an anode, an organic layer and a cathode are laminated on a substrate, and at least one layer of the organic layer includes (i) a compound represented by the following general formula (1): (Ii) The present invention relates to an organic electroluminescent device comprising a compound represented by the following general formula (2).
- each R independently represents an aromatic complex other than hydrogen, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, or a substituted or unsubstituted carbazolyl group having 3 to 30 carbon atoms.
- the alkyl group may be linear, branched or cyclic.
- R ′ is each independently hydrogen, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, a substituted or unsubstituted aromatic heterocyclic group having 3 to 30 carbon atoms, or an aromatic hydrocarbon group thereof. Or a substituted or unsubstituted linked aromatic group constituted by connecting 2 to 6 aromatic rings of an aromatic heterocyclic group, an alkyl group having 1 to 12 carbon atoms, a diarylamino group having 12 to 44 carbon atoms, A cyano group, a nitro group, or a fluoro group is shown.
- the alkyl group may be linear, branched or cyclic.
- m represents the number of repetitions and is an integer of 1 to 6.
- X 1 to X 3 independently represent N, CR ′ or C—.
- ring A represents a divalent carborane group of C 2 B 10 H 10 represented by formula (a1) or formula (b1), and is the same when a plurality of rings A are present in the molecule. Or different.
- q is the number of substitutions and is an integer of 1 to 4
- n is the number of repetitions and is an integer of 0 to 2.
- L 1 is a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, a substituted or unsubstituted aromatic heterocyclic group having 3 to 30 carbon atoms, or a substituted or unsubstituted aromatic ring represented by 2 Represents a monovalent linked aromatic group formed by linking up to 6 groups.
- L 3 is independently a single bond, a divalent substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, a divalent substituted or unsubstituted aromatic heterocyclic group having 3 to 30 carbon atoms, or It represents a divalent linked aromatic group constituted by connecting 2 to 6 of these substituted or unsubstituted aromatic rings.
- X 1 to X 3 are preferably C—H, N, or C—.
- ring A is a divalent carborane group of C 2 B 10 H 10 represented by formula (a1), or L 1 and L 2 are substituted or unsubstituted dibenzofurans. It is preferably a nyl group or a substituted or unsubstituted dibenzothiophenyl group.
- the organic layer containing the compound represented by General formula (1) and the compound represented by General formula (2) is a group which consists of a light emitting layer containing an emissive dopant, an electron blocking layer, and a hole blocking layer.
- the organic layer is preferably a light-emitting layer containing a light-emitting dopant, and more preferably contains these compounds as a host material.
- the luminescent dopant is preferably a delayed fluorescent luminescent dopant, or an organometallic complex containing at least one metal selected from ruthenium, rhodium, palladium, silver, rhenium, osmium, iridium, platinum and gold. .
- the carbazole compound represented by the general formula (1) has high skeletal stability and can control the electron / hole injection / transport properties to some extent by isomers and substituents. In addition, it is difficult to control both charge injection amounts within a preferable range.
- the carborane compound represented by the general formula (2) has a high electron injection / transport property of the device because the lowest vacant orbit (LUMO) that affects the electron injection / transport property is widely distributed throughout the molecule.
- the amount of charge injected into the organic layer can be precisely adjusted by using a mixture of the biscarbazole compound.
- the balance between both charge injection amounts can be adjusted, and in the case of a delayed fluorescent light emitting EL element or phosphorescent light emitting EL element, the excitation energy generated in the light emitting layer is confined. Therefore, since both compounds have sufficiently high excitation energy (singlet and triplet), there is no outflow of energy from the light emitting layer, and high efficiency and long life can be achieved at a low voltage.
- the organic electroluminescent device of the present invention is an organic electroluminescent device in which an anode, an organic layer and a cathode are laminated on a substrate. At least one layer of the organic layer is represented by (i) the general formula (1). And (ii) a compound represented by the general formula (2).
- the compound of General formula (1) and General formula (2) may each be 1 type, and both or one may consist of 2 or more types of compounds. These compounds are present in the organic layer as a mixture.
- the ratio of the compound represented by the general formula (1) is preferably 30 wt% or more with respect to the total of the compound represented by the general formula (1) and the compound represented by the general formula (2). More preferably, it is 35 to 95 wt%, and still more preferably 40 to 90 wt%.
- each R independently represents an aromatic other than hydrogen, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, or a substituted or unsubstituted carbazolyl group having 3 to 30 carbon atoms.
- Heterocyclic groups and these aromatic rings are connected to 2 to 6
- a substituted or unsubstituted linked aromatic group an alkyl group having 1 to 12 carbon atoms, a diarylamino group having 12 to 44 carbon atoms, a cyano group, a nitro group, or a fluoro group, preferably a substituted or unsubstituted carbon number A 6-18 aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group having 3 to 17 carbon atoms, or a substituted or unsubstituted linkage composed of 2 to 4 of these aromatic rings linked together
- the alkyl group may be linear, branched or cyclic.
- the carbazolyl group in the case of excluding the carbazolyl group is understood to be a group containing a carbazole ring.
- R ' has the same meaning as R described above except that the aromatic heterocyclic group may contain a carbazolyl group.
- R and R ′ in the general formula (1) are an unsubstituted aromatic hydrocarbon group, an aromatic heterocyclic group, or a linked aromatic group include benzene, pentalene, indene, naphthalene, and azulene.
- the number of linkages is 2 to 6, preferably 2 to 4.
- the linked aromatic rings may be the same or different. May be.
- linked aromatic group examples include, for example, biphenyl, terphenyl, bipyridine, bipyrimidine, vitriazine, terpyridine, phenylterphenyl, binaphthalene, phenylpyridine, diphenylpyridine, phenylpyrimidine, diphenylpyrimidine, phenyltriazine, diphenyltriazine, phenylnaphthalene.
- Aromade from aromatic compounds such as diphenylnaphthalene, carbazolylbenzene, biscarbazolylbenzene, biscarbazolyltriazine, dibenzofuranylbenzene, bisdibenzofuranylbenzene, dibenzothiophenylbenzene, bisdibenzothiophenylbenzene Excluded groups are exemplified.
- the substituent is an alkyl group having 1 to 20 carbon atoms, an aralkyl group having 7 to 38 carbon atoms, or 2 carbon atoms.
- alkylsulfonyl group a cyano group, a nitro group, a fluoro group, or a tosyl group, preferably an alkyl group having 1 to 12 carbon atoms, an aralkyl group having 7 to 20 carbon atoms, or 12 to 12 carbon atoms.
- diarylamino group an alkoxy group having 1 to 10 carbon atoms, a cyano group, fluoro group, or a tosyl group.
- substituents include methyl, ethyl, propyl, butyl, pentyl, cyclopentyl, hexyl, cyclohexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl Alkyl groups such as icosyl, aralkyl groups such as phenylmethyl, phenylethyl, phenylicosyl, naphthylmethyl, anthranylmethyl, phenanthrenylmethyl, pyrenylmethyl, alkenyl groups such as vinyl, propenyl, butenyl, pentenyl, decenyl, icosenyl Alkynyl groups such as e
- an alkyl group having 1 to 12 carbon atoms such as methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, phenylmethyl, phenylethyl, naphthylmethyl, anthranylmethyl, phenanthrenylmethyl
- An aralkyl group having 7 to 20 carbon atoms such as pyrenylmethyl, an alkoxy group having 1 to 10 carbon atoms such as methoxy, ethoxy, propoxy, butoxy, pentoxy, hexoxy, heptoxy, octoxy, nonyloxy, decanyloxy, diphenylamino, naphthylphenylamino, Examples thereof include a diarylamino group having two aromatic hydrocarbon groups having 6 to 15 carbon atoms such as dinaphthylamino, dianthranylamino, and diphen
- the linked aromatic group includes a plurality of aromatic rings (aromatic hydrocarbon rings, aromatic heterocycles, or both) of an aromatic compound having a monocyclic or condensed ring structure. It is a group.
- aromatic ring linked means that the aromatic rings of the aromatic group are linked by a direct bond. When the aromatic ring is a substituted aromatic ring, the substituent is not an aromatic ring.
- the linked aromatic group may be linear or branched, and the aromatic rings to be linked may be the same or different, and either one of the aromatic hydrocarbon ring and the aromatic heterocyclic ring or You may have both and you may have a substituent.
- the calculation of the carbon number does not include the carbon number of the substituent.
- the total number of carbon atoms including the carbon number of the substituent is preferably in the range of the carbon number.
- the number of carbon atoms of the linked aromatic group is understood to be the total number of carbon atoms of the linked aromatic hydrocarbon group and aromatic heterocyclic group.
- linking aromatic group is a monovalent group
- the linking mode shown below can be mentioned.
- the linked aromatic group is a divalent group
- linkage modes as shown below.
- a trivalent or higher group it is understood from the above.
- Ar 11 to Ar 16 and Ar 21 to Ar 26 represent a substituted or unsubstituted aromatic ring (aromatic group), and the ring constituent atoms of the aromatic ring are bonded by a direct bond. To do. Bonds come out of the ring atoms of the aromatic ring.
- the aromatic ring (aromatic group) means an aromatic hydrocarbon group or an aromatic heterocyclic group, and can be a monovalent or higher group.
- the bond is from Ar 11 , Ar 21 , or Ar 23 , but can be from other aromatic rings. Moreover, when it is a bivalent or more group, two or more bonds may come out from one aromatic ring.
- R and R ′ in the general formula (1) are an alkyl group having 1 to 12 carbon atoms or a diarylamino group having 12 to 44 carbon atoms include methyl, ethyl, propyl, butyl, tert- Alkyl groups such as butyl, pentyl, isopentyl, cyclopentyl, hexyl, cyclohexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, diphenylamino, naphthylphenylamino, dinaphthylamino, dianthranylamino, diphenanthrenylamino, etc.
- diarylamino groups include methyl, ethyl, propyl, butyl, tert- Alkyl groups such as butyl, pentyl, isopentyl, cyclopentyl, hexyl, cyclohexy
- X 1 to X 3 independently represent N, C—R ′, or C—, and are preferably C—H, N, or C—.
- C— represents a linking site with a carbazole ring or an adjacent ring (when m is 2 or more), and R ′ is the same as described above.
- m represents the number of repetitions, is an integer of 1 to 6, and is preferably an integer of 1 to 3.
- the m X-containing rings may be the same or different.
- the connection position of the X-containing ring and the carbazole ring or the plurality of X-containing rings is not particularly limited, but is preferably m-position or p-position.
- Ring A represents a C 2 B 10 H 10 divalent carborane group represented by formula (a1) or formula (b1), and a plurality of rings A in the molecule may be the same or different.
- all the rings A are carborane groups represented by the formula (a1).
- the two bonds that the divalent carborane group has may be generated from C or B, but the bonds that bond to L 1 and L 2 are preferably generated from C.
- n is a repeating number, and represents an integer of 0 to 2, preferably 0 or 1, more preferably 0.
- q is the number of substitutions and represents an integer of 1 to 4, preferably an integer of 1 to 2, and more preferably 1.
- L 1 is a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, a substituted or unsubstituted aromatic heterocyclic group having 3 to 30 carbon atoms, or a linkage of 2 to 6 of these aromatic rings
- a substituted or unsubstituted linked aromatic group Preferably, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 18 carbon atoms, a substituted or unsubstituted aromatic heterocyclic group having 3 to 17 carbon atoms, or 2 to 4 of these aromatic rings are connected. It is a substituted or unsubstituted linked aromatic group.
- L 2 is a single bond or a q + 1 valent group.
- the q + 1 valent group is a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, a substituted or unsubstituted aromatic heterocyclic group having 3 to 30 carbon atoms, or a substituted or unsubstituted aromatic group thereof. It is a q + 1 valent linked aromatic group constituted by connecting 2 to 6 rings. Preferably, it is a single bond, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 18 carbon atoms, a substituted or unsubstituted aromatic heterocyclic group having 3 to 17 carbon atoms, or 2 to 4 aromatic rings thereof.
- L 3 is independently a single bond or a divalent group.
- the divalent group includes a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, a substituted or unsubstituted aromatic heterocyclic group having 3 to 30 carbon atoms, or a substituted or unsubstituted aromatic group thereof.
- a substituted or unsubstituted linked aromatic group constituted by linking.
- L 1 L 2- (H) q.
- the organic EL device of the present invention contains a mixture of the compound represented by the general formula (1) and the compound represented by the general formula (2) in at least one organic layer of the organic EL device.
- the above mixture may be used in any organic layer because of its excellent charge transporting property, but is preferably included in the light emitting layer, the electron transporting layer, and the hole blocking layer, and particularly included in the light emitting layer. preferable.
- the above mixture When used in a light emitting layer, the above mixture may be used as a light emitting dopant material, but other phosphorescent dopant materials, fluorescent light emitting dopant materials or thermally activated delayed fluorescent light emitting dopant materials are used as the light emitting dopant material. It is preferable to use the above mixture as a host material.
- the phosphorescent dopant material is preferably an organometallic complex containing at least one metal selected from ruthenium, rhodium, palladium, silver, rhenium, osmium, iridium, platinum and gold.
- At least two compounds may be mixed before forming the element and evaporated using one vapor deposition source, or mixed at the time of forming the element by an operation such as co-evaporation using a plurality of vapor deposition sources. It doesn't matter.
- the at least two compounds may be used by forming a film on a substrate or the like using a wet process such as spin coating or inkjet, without using a dry process using a vapor deposition source.
- the structure of the organic EL element of the present invention will be described with reference to the drawings.
- the structure of the organic EL element of the present invention is not limited to the illustrated one.
- FIG. 1 is a cross-sectional view schematically showing a structural example of a general organic EL element, where 1 is a substrate, 2 is an anode, 3 is a hole injection layer, and 4 is hole transport. Layers 5, 5 are light-emitting layers, 6 is an electron transport layer, 7 is an electron injection layer, and 8 is a cathode.
- the organic EL device of the present invention has an anode, a light emitting layer, an electron transport layer and a cathode as essential layers, but other layers may be provided as necessary. Examples of other layers include, but are not limited to, a hole injection transport layer, an electron blocking layer, and a hole blocking layer.
- a positive hole injection transport layer means either a positive hole injection layer, a positive hole transport layer, or both.
- the substrate 1 serves as a support for the organic electroluminescent element, and a quartz or glass plate, a metal plate or a metal foil, a plastic film or a sheet is used.
- glass plates and smooth and transparent synthetic resin plates such as polyester, polymethacrylate, polycarbonate and polysulfone are preferred.
- a synthetic resin substrate it is necessary to pay attention to gas barrier properties. If the gas barrier property of the substrate is too small, the organic electroluminescent element may be deteriorated by the outside air that has passed through the substrate, which is not preferable. For this reason, a method of providing a gas barrier property by providing a dense silicon oxide film or the like on at least one surface of the synthetic resin substrate is also a preferable method.
- Anode An anode 2 is provided on the substrate 1, and the anode plays a role of hole injection into the hole transport layer.
- This anode is usually a metal such as aluminum, gold, silver, nickel, palladium, platinum, a metal oxide such as an oxide of indium and / or tin, an oxide of indium and / or zinc, or a halogen such as copper iodide.
- Metal oxide, carbon black, or a conductive polymer such as poly (3-methylthiophene), polypyrrole, or polyaniline.
- the anode is often formed by a sputtering method, a vacuum deposition method, or the like.
- anode in the case of fine metal particles such as silver, fine particles such as copper iodide, carbon black, conductive metal oxide fine particles, conductive polymer fine powder, etc., it is dispersed in an appropriate binder resin solution and placed on the substrate.
- An anode can also be formed by coating.
- a conductive polymer a thin film can be directly formed on the substrate by electrolytic polymerization, or the anode can be formed by applying a conductive polymer on the substrate 1.
- the anode can be formed by stacking different materials. The thickness of the anode varies depending on the required transparency. When transparency is required, the visible light transmittance is usually 60% or more, preferably 80% or more.
- the thickness is usually 5 to 1000 nm, preferably 10 to 10%. It is about 500 nm. If it may be opaque, the anode may be the same as the substrate. Furthermore, it is also possible to laminate different conductive materials on the anode.
- the hole transport layer 4 is provided on the anode 2.
- a hole injection layer 3 can also be provided between them.
- the material of the hole transport layer it is necessary that the material has a high hole injection efficiency from the anode and can efficiently transport the injected holes.
- the ionization potential is low, the transparency to visible light is high, the hole mobility is high, the stability is high, and impurities that become traps are unlikely to be generated during manufacturing or use.
- the light emitting layer 5 it is required not to quench the light emitted from the light emitting layer or to form an exciplex with the light emitting layer to reduce the efficiency.
- the element is further required to have heat resistance. Therefore, a material having a Tg value of 85 ° C. or higher is desirable.
- a mixture of the general formula (1) and the general formula (2) may be used, or a known compound conventionally used for this layer may be used.
- Known compounds include, for example, aromatic diamines containing two or more tertiary amines and having two or more condensed aromatic rings substituted with nitrogen atoms, 4,4 ′, 4 ′′ -tris (1-naphthylphenylamino) )
- Aromatic amine compounds having a starburst structure such as triphenylamine, aromatic amine compounds composed of tetramers of triphenylamine, 2,2 ′, 7,7′-tetrakis- (diphenylamino) -9,9 Examples include spiro compounds such as' -spirobifluorene, etc.
- examples of the material for the hole transport layer include polymer materials such as polyarylene ether sulfone containing polyvinyl carbazole, polyvinyl triphenylamine, and tetraphenylbenzidine.
- the hole transport layer When forming the hole transport layer by a coating method, one or more hole transport materials and, if necessary, an additive such as a binder resin or a coating property improving agent that does not trap holes are added, Dissolve to prepare a coating solution, apply onto the anode by a method such as spin coating, and dry to form a hole transport layer.
- the binder resin include polycarbonate, polyarylate, and polyester.
- the hole transport material is put in a crucible installed in a vacuum vessel, the inside of the vacuum vessel is evacuated to about 10 ⁇ 4 Pa with an appropriate vacuum pump, and then the crucible is heated.
- the hole transport material is evaporated, and a hole transport layer is formed on the substrate on which the anode is formed, facing the crucible.
- the thickness of the hole transport layer is usually 1 to 300 nm, preferably 5 to 100 nm. In order to uniformly form such a thin film, a vacuum deposition method is generally used.
- the hole injection layer is provided between the hole transport layer 4 and the anode 2. 3 is also inserted.
- the driving voltage of the initial element is lowered, and at the same time, an increase in voltage when the element is continuously driven with a constant current is suppressed.
- the conditions required for the material used for the hole injection layer are that the contact with the anode is good and a uniform thin film can be formed, which is thermally stable, that is, the glass transition temperature is high and the glass transition temperature is 100 ° C. Is required. Furthermore, the ionization potential is low, hole injection from the anode is easy, and the hole mobility is high.
- a mixture of the general formula (1) and the general formula (2) may be used, a known phthalocyanine compound such as copper phthalocyanine, an organic compound such as polyaniline or polythiophene, a sputter Carbon films, metal oxides such as vanadium oxide, ruthenium oxide, molybdenum oxide, 1,4,5,8-naphthalenetetracarboxylic dianhydride (NTCDA), hexanitrile hexaazatriphenylene (HAT), etc.
- NTCDA 1,4,5,8-naphthalenetetracarboxylic dianhydride
- HAT hexanitrile hexaazatriphenylene
- a P-type organic substance may be used alone, or may be mixed and used as necessary.
- a thin film can be formed in the same manner as the hole transport layer, but in the case of an inorganic material, a sputtering method, an electron beam evaporation method, or a plasma CVD method is further used.
- the film thickness of the hole injection layer formed as described above is usually 1 to 300 nm, preferably 5 to 100 nm.
- the light-emitting layer 5 is provided on the hole transport layer 4.
- the light emitting layer may be formed from a single light emitting layer, or may be formed by laminating a plurality of light emitting layers so as to be in direct contact with each other.
- the light emitting layer is configured as a host material and a light emitting dopant, and the light emitting dopant may be a fluorescent light emitting material, a delayed fluorescent light emitting material, and a phosphorescent light emitting material.
- a mixture of the compounds of the general formula (1) and the general formula (2) may be used as the luminescent dopant, but is preferably used as the host material.
- the fluorescent light-emitting material added to the host material includes condensed ring derivatives such as perylene and rubrene, quinacridone derivatives, phenoxazone 660, DCM1, perinone, coumarin derivatives, pyromethene (diazaindacene) derivatives, and cyanine dyes. Etc. can be used.
- examples of the delayed fluorescence material in the light emitting layer include carborane derivatives, tin complexes, indolocarbazole derivatives, copper complexes, carbazole derivatives, and the like. Specific examples include compounds described in the following non-patent documents and patent documents, but are not limited to these compounds.
- delayed luminescent materials are shown, but are not limited to the following compounds.
- the amount of the delayed fluorescent material contained in the light emitting layer is 0.01 to 50% by weight, preferably 0.1 to 20%. It may be in the range of% by weight, more preferably in the range of 0.01 to 10%.
- the phosphorescent dopant contains an organometallic complex containing at least one metal selected from ruthenium, rhodium, palladium, silver, rhenium, osmium, iridium, platinum and gold. Is good. Specific examples include compounds described in the following patent publications, but are not limited to these compounds.
- Preferable phosphorescent dopants include complexes such as Ir (ppy) 3 having a noble metal element such as Ir as a central metal, complexes such as Ir (bt) 2 ⁇ acac 3, and complexes such as PtOEt 3. Specific examples of these complexes are shown below, but are not limited to the following compounds.
- the amount of the phosphorescent dopant contained in the light emitting layer is 2 to 40% by weight, preferably 5 to 30% by weight.
- the film thickness of the light emitting layer is not particularly limited, but is usually 1 to 300 nm, preferably 5 to 100 nm, and is formed into a thin film by the same method as the hole transport layer.
- the blocking layer can block diffusion of charges (electrons or holes) and / or excitons existing in the light emitting layer to the outside of the light emitting layer.
- the electron blocking layer can be disposed between the light emitting layer and the hole transport layer and blocks electrons from passing through the light emitting layer toward the hole transport layer.
- a hole blocking layer can be disposed between the light emitting layer and the electron transporting layer to prevent holes from passing through the light emitting layer toward the electron transporting layer.
- the blocking layer can also be used to block excitons from diffusing outside the light emitting layer. That is, each of the electron blocking layer and the hole blocking layer can also function as an exciton blocking layer.
- the electron blocking layer or the hole blocking layer as used in this specification is used in the meaning including a layer having a function of a charge (electron or hole) blocking layer and an exciton blocking layer in one layer.
- the hole blocking layer has a function of an electron transport layer in a broad sense.
- the hole blocking layer has a role of blocking holes from reaching the electron transport layer while transporting electrons, thereby improving the recombination probability of electrons and holes in the light emitting layer.
- the material for the hole blocking layer a mixture of the general formula (1) and the general formula (2) is preferably used, and the material for the electron transport layer described later can also be used.
- the film thickness of the hole blocking layer according to the present invention is preferably 3 to 100 nm, more preferably 5 to 30 nm.
- the electron blocking layer has a function of transporting holes in a broad sense.
- the electron blocking layer has a role to block electrons from reaching the hole transport layer while transporting holes, thereby improving the probability of recombination of electrons and holes in the light emitting layer. .
- the electron blocking layer As a material for the electron blocking layer, a mixture of the general formula (1) and the general formula (2) is preferably used, and a material for the hole transport layer described later can also be used.
- the thickness of the electron blocking layer according to the present invention is preferably 3 to 100 nm, more preferably 5 to 30 nm.
- the exciton blocking layer is a layer for preventing excitons generated by recombination of holes and electrons in the light emitting layer from diffusing into the charge transport layer. It becomes possible to efficiently confine in the light emitting layer, and the light emission efficiency of the device can be improved.
- the exciton blocking layer can be inserted on either the anode side or the cathode side adjacent to the light emitting layer, or both can be inserted simultaneously.
- this layer when the exciton blocking layer is provided on the anode side, this layer can be inserted adjacent to the light emitting layer between the hole transport layer and the light emitting layer, and when inserted on the cathode side, the light emitting layer and the cathode This layer can be inserted adjacent to the light emitting layer.
- a hole injection layer, an electron blocking layer, or the like can be provided between the anode and the exciton blocking layer adjacent to the anode side of the light emitting layer, and the excitation adjacent to the cathode and the cathode side of the light emitting layer can be provided.
- an electron injection layer, an electron transport layer, a hole blocking layer, and the like can be provided between the child blocking layer.
- a mixture of the general formula (1) and the general formula (2) is preferably used, and any generally used material can be used.
- exciton blocking layer materials examples include 1,3-dicarbazolylbenzene (mCP) and bis (2-methyl-8-quinolinolato) -4-phenylphenolatoaluminum (III) (BAlq ).
- Electron Transport Layer An electron transport layer 6 is provided between the light emitting layer 5 and the cathode 8 for the purpose of further improving the light emission efficiency of the device.
- the electron transporting layer is preferably an electron transporting material capable of smoothly injecting electrons from the cathode, and a mixture of the general formula (1) and the general formula (2) may be used, or any commonly used Materials can be used.
- Examples of the electron transport material satisfying such conditions include metal complexes such as Alq 3 , metal complexes of 10-hydroxybenzo [h] quinoline, oxadiazole derivatives, distyrylbiphenyl derivatives, silole derivatives, 3- or 5-hydroxy Flavone metal complex, benzoxazole metal complex, benzothiazole metal complex, trisbenzimidazolylbenzene, quinoxaline compound, phenanthroline derivative, 2-t-butyl-9,10-N, N'-dicyanoanthraquinone diimine, n-type hydrogenated non-hydrogenated Examples thereof include crystalline silicon carbide, n-type zinc sulfide, and n-type zinc selenide.
- metal complexes such as Alq 3
- metal complexes of 10-hydroxybenzo [h] quinoline oxadiazole derivatives, distyrylbiphenyl derivatives, silole derivatives, 3- or 5-hydroxy Flavone metal complex
- the film thickness of the electron transport layer is usually 1 to 300 nm, preferably 5 to 100 nm.
- the electron transport layer is formed by laminating on the light emitting layer by a coating method or a vacuum deposition method in the same manner as the hole transport layer. Usually, a vacuum deposition method is used.
- the cathode 8 plays a role of injecting electrons into the electron transport layer 6.
- the material used for the anode 2 can be used.
- a metal having a low work function is preferable for efficient electron injection, and tin, magnesium, indium, calcium, aluminum
- a suitable metal such as silver or an alloy thereof is used.
- Specific examples include low work function alloy electrodes such as magnesium-silver alloy, magnesium-indium alloy, and aluminum-lithium alloy.
- the thickness of the cathode is usually the same as that of the anode.
- a metal layer having a high work function and stable to the atmosphere on the cathode increases the stability of the device.
- metals such as aluminum, silver, copper, nickel, chromium, gold, platinum are used.
- inserting an ultrathin insulating film (0.1-5 nm) such as LiF, MgF 2 , Li 2 O between the cathode 8 and the electron transport layer 6 as the electron injection layer 7 also improves the efficiency of the device. It is an effective method.
- a cathode 8 an electron injection layer 7, an electron transport layer 6, a light emitting layer 5, a hole transport layer 4, a hole injection layer 3, and an anode 2 are laminated on the substrate 1 in this order. It is also possible to provide the organic EL element of the present invention between two substrates, at least one of which is highly transparent as described above. Also in this case, layers can be added or omitted as necessary.
- the organic EL element of the present invention can be any of a single element, an element having a structure arranged in an array, and a structure in which an anode and a cathode are arranged in an XY matrix.
- the use of the two compounds of the present invention in at least one organic layer, particularly as a mixed host material of the light emitting layer increases the luminous efficiency even at a low voltage.
- a device with greatly improved driving stability can be obtained, and excellent performance can be exhibited in application to full-color or multi-color panels.
- the first host and compound A mean a compound represented by general formula (1)
- the second host and compound B mean a compound represented by general formula (2).
- Example 1 Each thin film was laminated at a vacuum degree of 2.0 ⁇ 10 ⁇ 5 Pa by a vacuum deposition method on a glass substrate on which an anode made of indium tin oxide (ITO) having a thickness of 70 nm was formed.
- ITO indium tin oxide
- CuPC copper phthalocyanine
- NPB 4,4-bis [N- (1-naphthyl) -N-phenylamino] biphenyl
- the compound 1-2 as the first host, the compound 2-1 as the second host, and the iridium complex [iridium (III) bis (4,6-di-), which is a blue phosphorescent material, as the guest in the light emitting layer are used as the light emitting layer.
- Fluorophenyl) -pyridinate-N, C2 ′] picolinate] (FIrpic) were co-evaporated from different deposition sources to form a light emitting layer with a thickness of 30 nm.
- the deposition rate ratio (wt ratio) of the first host, the second host, and FIrpic was 47: 47: 6.
- Alq 3 was formed to a thickness of 25 nm as an electron transport layer.
- the obtained organic EL device has a layer structure in which an electron injection layer is added between the cathode and the electron transport layer in the organic EL device shown in FIG.
- an external power source was connected to the obtained organic EL element and a DC voltage was applied, an emission spectrum with a maximum wavelength of 475 nm was observed from any organic EL element, and it was found that light emission from FIrpic was obtained.
- Table 1 shows the characteristics of the produced organic EL elements.
- Example 2 organic EL devices were produced in the same manner as in Example 1 except that the compounds listed in Table 1 were used as the first host of the light emitting layer (Examples 2 to 7). Further, organic EL devices were produced in the same manner as in Examples 1 to 7 except that compounds 2-18 and 2-29 were used as the second host in the light emitting layer (Examples 8 to 21). When an external power source was connected to the obtained organic EL element and a DC voltage was applied, an emission spectrum with a maximum wavelength of 475 nm was observed from any organic EL element, and it was found that light emission from FIrpic was obtained. Table 1 shows the characteristics of the produced organic EL elements.
- Example 1 an organic EL device was produced in the same manner as in Example 1 except that the compound described in Table 1 was used alone as the light emitting layer host.
- the host amount was the same as the sum of the first host and the second host in Example 1, and the guest amount was the same.
- a power source was connected to the obtained organic EL element and a DC voltage was applied, an emission spectrum with a maximum wavelength of 475 nm was observed from any organic EL element, and it was found that light emission from FIrpic was obtained.
- Table 2 shows the characteristics of the produced organic EL device.
- the luminance, voltage, and light emission efficiency are values at a driving current of 2.5 mA / cm 2
- the luminance half time is a value at an initial luminance of 1000 cd / m 2 .
- Compound No. Is the number given to the above chemical formula.
- Example 22 Each thin film was laminated at a vacuum degree of 4.0 ⁇ 10 ⁇ 4 Pa by a vacuum deposition method on a glass substrate on which an anode made of ITO having a thickness of 150 nm was formed.
- CuPc was formed to a thickness of 20 nm on ITO as a hole injection layer, and then NPB was formed to a thickness of 20 nm as a hole transport layer.
- compound 1-2 as the first host
- compound 2-1 as the second host
- the deposition rate ratio of the first host, the second host, and Ir (PPy) 3 was 47: 47: 6.
- aluminum (III) bis (2-methyl-8-quinolinato) 4-phenylphenolate (BAlq) was formed to a thickness of 10 nm as a hole blocking layer.
- BAlq aluminum (III) bis (2-methyl-8-quinolinato) 4-phenylphenolate
- Alq 3 aluminum (III) bis (2-methyl-8-quinolinato) 4-phenylphenolate
- LiF was formed to a thickness of 0.5 nm as an electron injection layer on the electron transport layer.
- Al was formed as a cathode with a thickness of 100 nm on the electron injection layer, and an organic EL device was produced.
- Examples 23-42 organic EL devices were produced in the same manner as in Example 22 except that the compounds listed in Table 3 were used as the first host of the light emitting layer (Examples 23 to 28). Further, organic EL devices were produced in the same manner as in Examples 22 to 28 except that compounds 2-18 and 2-29 were used as the second host in the light emitting layer (Examples 29 to 42). When an external power source was connected to the obtained organic EL element and a DC voltage was applied, an emission spectrum with a maximum wavelength of 517 nm was observed from any organic EL element, and light emission from Ir (PPy) 3 was obtained. I understood. Table 3 shows the characteristics of the produced organic EL elements.
- Example 22 an organic EL device was produced in the same manner as in Example 22 except that the compound described in Table 3 was used alone as the light emitting layer host.
- the host amount was the same as the total of the first host and the second host in Example 22, and the guest amount was the same.
- a power supply was connected to the obtained organic EL element and a DC voltage was applied, an emission spectrum with a maximum wavelength of 517 nm was observed from any organic EL element, and light emission from Ir (PPy) 3 was obtained. all right.
- Table 4 shows the characteristics of the produced organic EL elements.
- the luminance, voltage, and luminous efficiency are values at a driving current of 20 mA / cm 2
- the luminance half time is a value at an initial luminance of 1000 cd / m 2 .
- Example 43 Each thin film was laminated at a vacuum degree of 2.0 ⁇ 10 ⁇ 5 Pa by a vacuum deposition method on a glass substrate on which an anode made of ITO having a thickness of 70 nm was formed.
- CuPC was formed to a thickness of 30 nm on ITO as a hole injection layer.
- NPD was formed to a thickness of 15 nm as a hole transport layer.
- mCBP as a host material of the light emitting layer and FIrpic as a dopant were co-deposited on the hole transport layer from different vapor deposition sources to form a light emitting layer with a thickness of 30 nm.
- the concentration of FIrpic was 20 wt%.
- Compound 1-8 (Compound A) and Compound 2-1 (Compound B) were co-deposited from different deposition sources as a hole blocking layer on the light emitting layer to form a thickness of 5 nm.
- the deposition rate ratio of Compound 1-8 to Compound 2-1 was 50:50.
- Alq 3 was formed to a thickness of 20 nm as an electron transport layer.
- LiF was formed to a thickness of 1.0 nm as an electron injection layer on the electron transport layer.
- Al was formed to have a thickness of 70 nm as an electrode on the electron injection layer.
- the obtained organic EL device has a layer structure in which an electron injection layer is added between the cathode and the electron transport layer and a hole blocking layer is added between the light emitting layer and the electron transport layer in the organic EL device shown in FIG.
- An external power source was connected to the obtained organic EL element and a DC voltage was applied, an emission spectrum with a maximum wavelength of 475 nm was observed from any organic EL element, and it was found that light emission from FIrpic was obtained.
- Table 3 shows the characteristics of the produced organic EL elements.
- Example 43 an organic EL device was produced in the same manner as in Example 43, except that compounds 2-18 and 2-29 were used instead of compound 2-1 as compound B in the hole blocking layer (Example 44). ⁇ 45). Further, organic EL devices were produced in the same manner as in Examples 43 to 45 except that Compound 1-15 was used instead of Compound 1-8 as Compound A in the hole blocking layer (Examples 46 to 48). When an external power source was connected to the obtained organic EL element and a DC voltage was applied, an emission spectrum with a maximum wavelength of 475 nm was observed from any organic EL element, and it was found that light emission from FIrpic was obtained. Table 5 shows the characteristics of the produced organic EL elements.
- Comparative Example 21 An organic EL device was produced in the same manner as in Example 43, except that the film thickness of Alq 3 as the electron transport layer in Example 43 was 25 nm and no hole blocking layer was provided.
- the luminance, voltage, and light emission efficiency are values at a driving current of 2.5 mA / cm 2
- the luminance half time is a value at an initial luminance of 1000 cd / m 2 .
- the organic EL device of the present invention has a low driving voltage, a high luminous efficiency and a long lifetime, and can be expected to be applied to full-color and multi-color panels. It may also be used for displays and organic EL lighting.
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Abstract
Description
R’はそれぞれ独立して水素、置換若しくは未置換の炭素数6~30の芳香族炭化水素基、置換若しくは未置換の炭素数3~30の芳香族複素環基、これらの芳香族炭化水素基又は芳香族複素環基の芳香族環が2~6つ連結して構成される置換若しくは未置換の連結芳香族基、炭素数1~12のアルキル基、炭素数12~44のジアリールアミノ基、シアノ基、ニトロ基、又はフルオロ基を示す。なお、アルキル基は、直鎖状、分岐状、環状であってもよい。
mは繰り返し数を示し、1~6の整数である。X1~X3は独立に、N、C-R’又はC-を示す。
L1は、置換若しくは未置換の炭素数6~30の芳香族炭化水素基、置換若しくは未置換の炭素数3~30の芳香族複素環基、又はこれら置換若しくは未置換の芳香族環が2~6つ連結して構成される1価の連結芳香族基を表す。
L2は、単結合、q+1価の置換若しくは未置換の炭素数6~30の芳香族炭化水素基、置換若しくは未置換の炭素数3~30の芳香族複素環基、又はこれら置換若しくは未置換の芳香族環が2~6つ連結して構成されるq+1価の連結芳香族基を表す。但し、q=1かつn=1の場合は、単結合、芳香族複素環基、又は少なくとも1つの芳香族複素環基を含む連結芳香族基である。
L3は独立に、単結合、2価の置換若しくは未置換の炭素数6~30の芳香族炭化水素基、2価の置換若しくは未置換の炭素数3~30の芳香族複素環基、又はこれら置換若しくは未置換の芳香族環が2~6つ連結して構成される2価の連結芳香族基を表す。
ここで、一般式(1)で表されるカルバゾール化合物は、骨格の安定性が高く、異性体や置換基によって電子/正孔注入輸送性をある程度制御することができるが単独では、上述のように両電荷注入量を好ましい範囲に制御するのは難しい。一方で、一般式(2)で表されるカルボラン化合物は、電子注入輸送性に影響を与える最低空軌道(LUMO)が分子全体に広く分布していることから素子の電子注入輸送性が高いレベルで制御でき、加えてカルバゾール化合物と同様に骨格安定性が高いため、ビスカルバゾール化合物を混合して用いることで、有機層への電荷注入量を精密に調節することができる。特に、発光層又は電荷阻止層に使用した場合は、両電荷注入量のバランスを調整でき、遅延蛍光発光EL素子や燐光発光EL素子の場合にあっては、発光層で生成する励起エネルギーを閉じ込めるのに十分高い励起エネルギー(一重項および三重項)を両化合物の各々が有していることから、発光層内からのエネルギー流出がなく、低電圧で高効率かつ長寿命を達成できる。
連結芳香族基は直鎖状であっても分岐状であってもよく、連結する芳香族環は同一であっても異なっていてもよく、芳香族炭化水素環と芳香族複素環の一方又は両方を有してもよく、置換基を有してもよい。
ここで、C-はカルバゾール環又は隣接環(mが2以上の場合)との連結部位を表し、R’は前記説明と同様である。
また、X含有環とカルバゾール環、又は複数のX含有環の連結位置は特に限定されるものではないが、m位又はp位であることが好ましい。
また、2価のカルボラン基が有する2つの結合手はCから生じても、Bから生じてもよいが、L1、L2と結合する結合手はCから生じることが好ましい。
qは置換数であり、1~4の整数を表し、好ましくは、1~2の整数であり、より好ましくは1である。
n=0の場合は、L1とL2が同一であること、又はL1とL2の環Aと結合する芳香族環が同一であることが好ましい。ここで、環Aと結合する芳香族環が同一であるとは、L1がAr1-Ar2-で表され、L2が-Ar3-Ar4-で表される場合、環Aと直接結合するAr2とAr4が同一であることを意味する。ここで、Ar1~Ar4は置換基を有してもよい芳香族環である。また、n=0の場合、L1=L2-(H)qであることが好ましい。
図1は一般的な有機EL素子の構造例を模式的に示す断面図であり、1は基板、2は陽極、3は正孔注入層、4は正孔輸送層、5は発光層、6は電子輸送層、7は電子注入層、8は陰極を各々示す。本発明の有機EL素子では、陽極、発光層、電子輸送層及び陰極を必須の層として有するが、必要により他の層を設けてもよい。他の層とは、例えば正孔注入輸送層や電子阻止層及び正孔阻止層が挙げられるが、これらに限定されるものではない。なお、正孔注入輸送層は、正孔注入層と正孔輸送層のいずれか又は両者を意味する。
基板1は有機電界発光素子の支持体となるものであり、石英やガラスの板、金属板や金属箔、プラスチックフィルムやシートなどが用いられる。特にガラス板や、ポリエステル、ポリメタクリレート、ポリカーボネート、ポリスルホンなどの平滑で透明な合成樹脂の板が好ましい。合成樹脂基板を使用する場合にはガスバリア性に留意する必要がある。基板のガスバリア性が小さすぎると、基板を通過した外気により有機電界発光素子が劣化することがあるので好ましくない。このため、合成樹脂基板の少なくとも片面に緻密なシリコン酸化膜等を設けてガスバリア性を確保する方法も好ましい方法の一つである。
基板1上には陽極2が設けられるが、陽極は正孔輸送層への正孔注入の役割を果たすものである。この陽極は、通常、アルミニウム、金、銀、ニッケル、パラジウム、白金等の金属、インジウム及び/又はスズの酸化物、インジウム及び/又は亜鉛の酸化物などの金属酸化物、ヨウ化銅などのハロゲン化金属、カーボンブラック、あるいは、ポリ(3-メチルチオフェン)、ポリピロール、ポリアニリン等の導電性高分子などにより構成される。陽極の形成は通常、スパッタリング法、真空蒸着法などにより行われることが多い。また、銀などの金属微粒子、ヨウ化銅などの微粒子、カーボンブラック、導電性の金属酸化物微粒子、導電性高分子微粉末などの場合には、適当なバインダー樹脂溶液に分散し、基板上に塗布することにより陽極を形成することもできる。更に、導電性高分子の場合は電解重合により直接基板上に薄膜を形成したり、基板1上に導電性高分子を塗布して陽極を形成することもできる。陽極は異なる物質で積層して形成することも可能である。陽極の厚みは、必要とする透明性により異なる。透明性が必要とされる場合は、可視光の透過率を、通常、60%以上、好ましくは80%以上とすることが望ましく、この場合、厚みは、通常、5~1000nm、好ましくは10~500nm程度である。不透明でよい場合には、陽極は基板と同一でもよい。また、更には上記の陽極の上に異なる導電材料を積層することも可能である。
陽極2の上に正孔輸送層4が設けられる。両者の間には、正孔注入層3を設けることもできる。正孔輸送層の材料に要求される条件としては、陽極からの正孔注入効率が高く、かつ、注入された正孔を効率よく輸送することができる材料であることが必要である。そのためには、イオン化ポテンシャルが小さく、可視光の光に対して透明性が高く、しかも正孔移動度が大きく、更に安定性に優れ、トラップとなる不純物が製造時や使用時に発生しにくいことが要求される。また、発光層5に接するために発光層からの発光を消光したり、発光層との間でエキサイプレックスを形成して効率を低下させないことが求められる。上記の一般的要求以外に、車載表示用の応用を考えた場合、素子には更に耐熱性が要求される。従って、Tgとして85℃以上の値を有する材料が望ましい。
また、上記の化合物以外に、正孔輸送層の材料として、ポリビニルカルバゾール、ポリビニルトリフェニルアミン、テトラフェニルベンジジンを含有するポリアリーレンエーテルサルホン等の高分子材料が挙げられる。
正孔注入の効率を更に向上させ、かつ、有機層全体の陽極への付着力を改善させる目的で、正孔輸送層4と陽極2との間に正孔注入層3を挿入することも行われている。正孔注入層を挿入することで、初期の素子の駆動電圧が下がると同時に、素子を定電流で連続駆動した時の電圧上昇も抑制される効果がある。正孔注入層に用いられる材料に要求される条件としては、陽極とのコンタクトがよく均一な薄膜が形成でき、熱的に安定、すなわち、ガラス転移温度が高く、ガラス転移温度としては100℃以上が要求される。更に、イオン化ポテンシャルが低く陽極からの正孔注入が容易なこと、正孔移動度が大きいことが挙げられる。
正孔輸送層4の上に発光層5が設けられる。発光層は、単一の発光層から形成されていてもよいし、複数の発光層を直接接するように積層して構成されていてもよい。発光層は、ホスト材料と発光性ドーパントとして構成され、発光性ドーパントとしては、蛍光発光材料、遅延蛍光発光材料及び燐光発光材料の場合がある。一般式(1)及び一般式(2)の化合物の混合物を発光性ドーパントとして使用しても構わないが、ホスト材料として使用することが好ましい。
2)Appl. Phys. Lett. 98, 083302 (2011)
3)特開2011-213643号公報
4)J. Am. Chem. Soc. 2012, 134, 14706-14709。
阻止層は、発光層中に存在する電荷(電子若しくは正孔)及び/又は励起子の発光層外への拡散を阻止することができる。電子阻止層は、発光層及び正孔輸送層の間に配置されることができ、電子が正孔輸送層の方に向かって発光層を通過することを阻止する。同様に、正孔阻止層は発光層及び電子輸送層の間に配置されることができ、正孔が電子輸送層の方に向かって発光層を通過することを阻止する。阻止層はまた、励起子が発光層の外側に拡散することを阻止するために用いることができる。すなわち電子阻止層、正孔阻止層はそれぞれ励起子阻止層としての機能も兼ね備えることができる。本明細書でいう電子阻止層又は正孔阻止層は、一つの層で電荷(電子若しくは正孔)阻止層及び励起子阻止層の機能を有する層を含む意味で使用される。
正孔阻止層とは広い意味では電子輸送層の機能を有する。正孔阻止層は電子を輸送しつつ、正孔が電子輸送層へ到達することを阻止する役割があり、これにより発光層中での電子と正孔の再結合確率を向上させることができる。
電子阻止層とは、広い意味では正孔を輸送する機能を有する。電子阻止層は正孔を輸送しつつ、電子が正孔輸送層へ到達することを阻止する役割があり、これにより発光層中での電子と正孔が再結合する確率を向上させることができる。
励起子阻止層とは、発光層内で正孔と電子が再結合することにより生じた励起子が電荷輸送層に拡散することを阻止するための層であり、本層の挿入により励起子を効率的に発光層内に閉じ込めることが可能となり、素子の発光効率を向上させることができる。励起子阻止層は発光層に隣接して陽極側、陰極側のいずれにも挿入することができ、両方同時に挿入することも可能である。すなわち、励起子阻止層を陽極側に有する場合、正孔輸送層と発光層の間に、発光層に隣接してこの層を挿入することができ、陰極側に挿入する場合、発光層と陰極との間に、発光層に隣接してこの層を挿入することができる。また、陽極と、発光層の陽極側に隣接する励起子阻止層との間には、正孔注入層や電子阻止層などを有することができ、陰極と、発光層の陰極側に隣接する励起子阻止層との間には、電子注入層、電子輸送層、正孔阻止層などを有することができる。
素子の発光効率を更に向上させることを目的として、発光層5と陰極8の間に、電子輸送層6が設けられる。電子輸送層としては、陰極からスムーズに電子を注入できる電子輸送性材料が好ましく、一般式(1)及び一般式(2)の混合物を使用しても良いし、一般的に使用される任意の材料を用いることができる。このような条件を満たす電子輸送材料としては、Alq3などの金属錯体、10-ヒドロキシベンゾ[h]キノリンの金属錯体、オキサジアゾール誘導体、ジスチリルビフェニル誘導体、シロール誘導体、3-又は5-ヒドロキシフラボン金属錯体、ベンズオキサゾール金属錯体、ベンゾチアゾール金属錯体、トリスベンズイミダゾリルベンゼン、キノキサリン化合物、フェナントロリン誘導体、2-t-ブチル-9,10-N,N'-ジシアノアントラキノンジイミン、n型水素化非晶質炭化シリコン、n型硫化亜鉛、n型セレン化亜鉛などが挙げられる。
陰極8は、電子輸送層6に電子を注入する役割を果たす。陰極として用いられる材料は、前記陽極2に使用される材料を用いることが可能であるが、効率よく電子注入を行なうには、仕事関数の低い金属が好ましく、スズ、マグネシウム、インジウム、カルシウム、アルミニウム、銀等の適当な金属又はそれらの合金が用いられる。具体例としては、マグネシウム-銀合金、マグネシウム-インジウム合金、アルミニウム-リチウム合金等の低仕事関数合金電極が挙げられる。
陰極の膜厚は通常、陽極と同様である。低仕事関数金属からなる陰極を保護する目的で、この上に更に、仕事関数が高く大気に対して安定な金属層を積層することは素子の安定性を増す。この目的のために、アルミニウム、銀、銅、ニッケル、クロム、金、白金等の金属が使われる。
更に、電子注入層7として、陰極8と電子輸送層6の間にLiF、MgF2、Li2O等の極薄絶縁膜(0.1~5nm)を挿入することも素子の効率を向上させる有効な方法である。
膜厚70nmの酸化インジウムスズ(ITO)からなる陽極が形成されたガラス基板上に、各薄膜を真空蒸着法にて、真空度2.0×10-5Paで積層させた。まず、ITO上に正孔注入層として、銅フタロシアニン(CuPC)を30nmの厚さに形成した。次に、正孔輸送層として4,4-ビス[N-(1-ナフチル)-N-フェニルアミノ]ビフェニル(NPB)を15nmの厚さに形成した。次に発光層として、第一ホストとして化合物1-2を、第二ホストとして化合物2-1を、発光層ゲストとして青色燐光材料であるイリジウム錯体[イリジウム(III)ビス(4,6-ジ-フルオロフェニル)-ピリジネート-N,C2']ピコリネート](FIrpic)とを異なる蒸着源から、共蒸着し、30nm の厚さに発光層を形成した。この時、第一ホストと第二ホストとFIrpicの蒸着速度比(wt比)は、47:47:6であった。次に、電子輸送層としてAlq3を25nm厚さに形成した。更に、電子輸送層上に、電子注入層としてフッ化リチウム(LiF)を1.0nm厚さに形成した。最後に、電子注入層上に、電極としてアルミニウム(Al)を70nm厚さに形成した。得られた有機EL素子は、図1に示す有機EL素子において、陰極と電子輸送層の間に、電子注入層が追加された層構成を有する。
得られた有機EL素子に外部電源を接続し直流電圧を印加したところ、いずれの有機EL素子からも極大波長475nmの発光スペクトルが観測され、FIrpicからの発光が得られていることがわかった。表1に作製した有機EL素子の特性を示す。
実施例1において、発光層の第一ホストとして表1に記載した化合物を用いた以外は実施例1と同様にして有機EL素子を作製した(実施例2~7)。
また、発光層の第二ホストとして化合物2-18、2-29を用いた以外は実施例1~7と同様にして有機EL素子を作製した(実施例8~21)。
得られた有機EL素子に外部電源を接続し直流電圧を印加したところ、いずれの有機EL素子からも極大波長475nmの発光スペクトルが観測され、FIrpicからの発光が得られていることがわかった。表1に作製した有機EL素子の特性を示す。
実施例1において、発光層ホストとして表1に記載した化合物を単独で用いた以外は実施例1と同様にして有機EL素子を作製した。なお、ホスト量は、実施例1における第1ホストと第2ホストの合計と同じ量とし、ゲスト量は同様とした。得られた有機EL素子に電源を接続し直流電圧を印加したところ、いずれの有機EL素子からも極大波長475nmの発光スペクトルが観測され、FIrpicからの発光が得られていることがわかった。表2に作製した有機EL素子の特性を示す。
膜厚150nmのITOからなる陽極が形成されたガラス基板上に、各薄膜を真空蒸着法にて、真空度4.0×10-4Paで積層させた。まず、ITO上に正孔注入層としてCuPcを20nmの厚さに形成し、次に正孔輸送層としてNPBを20nmの厚さに形成した。次に発光層として、第一ホストとして化合物1-2を、第二ホストとして化合物2-1を、発光層ゲストとしてトリス(2-フェニルピリジン)イリジウム(III)(Ir(PPy)3)をそれぞれ異なる蒸着源から共蒸着し、30nmの厚さに形成した。この時、第一ホストと第二ホストとIr(PPy)3の蒸着速度比は、47:47:6であった。次に、正孔阻止層としてアルミニウム(III)ビス(2-メチル-8-キノリナト)4-フェニルフェノラート(BAlq)を10nmの厚さに形成した。次に、電子輸送層としてAlq3を40nmの厚さに形成した。更に、電子輸送層上に、電子注入層としてLiFを0.5nmの厚さに形成した。最後に、電子注入層上に、陰極としてAlを100nmの厚さに形成し、有機EL素子を作製した。
得られた有機EL素子に外部電源を接続し直流電圧を印加したところ、極大波長517nmの発光スペクトルが観測され、Ir(PPy)3からの発光が得られていることがわかった。表3に作製した有機EL素子の特性(輝度、電圧、外部量子効率及び輝度半減時間)を示す。
実施例22において、発光層の第一ホストとして表3に記載した化合物を用いた以外は実施例22と同様にして有機EL素子を作製した(実施例23~28)。
また、発光層の第二ホストとして化合物2-18、2-29を用いた以外は実施例22~28と同様にして有機EL素子を作製した(実施例29~42)。
得られた有機EL素子に外部電源を接続し直流電圧を印加したところ、いずれの有機EL素子からも極大波長517nmの発光スペクトルが観測され、Ir(PPy)3からの発光が得られていることがわかった。表3に作製した有機EL素子の特性を示す。
実施例22において、発光層ホストとして表3に記載した化合物を単独で用いた以外は実施例22と同様にして有機EL素子を作製した。なお、ホスト量は、実施例22における第1ホストと第2ホストの合計と同じ量とし、ゲスト量は同様とした。得られた有機EL素子に電源を接続し直流電圧を印加したところ、いずれの有機EL素子からも極大波長517nmの発光スペクトルが観測され、Ir(PPy)3からの発光が得られていることがわかった。表4に作製した有機EL素子の特性を示す。
膜厚70nmのITOからなる陽極が形成されたガラス基板上に、各薄膜を真空蒸着法にて、真空度2.0×10-5Paで積層させた。まず、ITO上に正孔注入層として、CuPCを30nmの厚さに形成した。次に、正孔輸送層としてNPDを15nmの厚さに形成した。次に、正孔輸送層上に、発光層のホスト材料としてのmCBPとドーパントとしてのFIrpicとを異なる蒸着源から、共蒸着し、30nmの厚さに発光層を形成した。FIrpicの濃度は20wt%であった。次に、発光層上に正孔阻止層として化合物1-8(化合物A)と化合物2-1(化合物B)をそれぞれ異なる蒸着源から共蒸着し、5nmの厚さに形成した。この時、化合物1-8と化合物2-1の蒸着速度比は、50:50であった。次に電子輸送層としてAlq3を20nm厚さに形成した。更に、電子輸送層上に、電子注入層としてLiFを1.0nm厚さに形成した。最後に、電子注入層上に、電極としてAlを70nm厚さに形成した。
得られた有機EL素子は、図1に示す有機EL素子において、陰極と電子輸送層の間に電子注入層、及び発光層と電子輸送層の間に、正孔阻止層が追加された層構成を有する。得られた有機EL素子に外部電源を接続し直流電圧を印加したところ、いずれの有機EL素子からも極大波長475nmの発光スペクトルが観測され、FIrpicからの発光が得られていることがわかった。表3に作製した有機EL素子の特性を示す。
実施例43において、正孔阻止層の化合物Bとして化合物2-1に代えて化合物2-18、2-29を用いた以外は実施例43と同様にして有機EL素子を作製した(実施例44~45)。
また、正孔阻止層の化合物Aとして化合物1-8に代えて化合物1-15を用いた以外は実施例43~45と同様にして有機EL素子を作製した(実施例46~48)。
得られた有機EL素子に外部電源を接続し直流電圧を印加したところ、いずれの有機EL素子からも極大波長475nmの発光スペクトルが観測され、FIrpicからの発光が得られていることがわかった。表5に作製した有機EL素子の特性を示す。
実施例43における電子輸送層としてのAlq3の膜厚を25nmとし、正孔阻止層を設けないこと以外は、実施例43と同様にして有機EL素子を作成した。
Claims (9)
- 基板上に、陽極、有機層及び陰極が積層されてなる有機電界発光素子において、該有機層の少なくとも1層に、(i)下記一般式(1)で表される化合物と、(ii)下記一般式(2)で表される化合物を含むことを特徴とする有機電界発光素子。
(ここで、Rはそれぞれ独立して水素、置換若しくは未置換の炭素数6~30の芳香族炭化水素基、置換若しくは未置換の炭素数3~30のカルバゾリル基以外の芳香族複素環基、これらの芳香族炭化水素基又は芳香族複素環基の芳香族環が2~6つ連結して構成される置換若しくは未置換の連結芳香族基、炭素数1~12のアルキル基、炭素数12~44のジアリールアミノ基、シアノ基、ニトロ基、又はフルオロ基を示す。なお、アルキル基は、直鎖状、分岐状、環状であってもよい。
R’はそれぞれ独立して水素、置換若しくは未置換の炭素数6~30の芳香族炭化水素基、置換若しくは未置換の炭素数3~30の芳香族複素環基、これらの芳香族炭化水素基又は芳香族複素環基の芳香族環が2~6つ連結して構成される置換若しくは未置換の連結芳香族基、炭素数1~12のアルキル基、炭素数12~44のジアリールアミノ基、シアノ基、ニトロ基、又はフルオロ基を示す。なお、アルキル基は、直鎖状、分岐状、環状であってもよい。
mは繰り返し数を示し、1~6の整数である。X1~X3は独立に、N、C-R’又はC-を示す。)
(ここで、環Aは式(a1)又は式(b1)で表されるC2B10H10の2価のカルボラン基を示し、分子内に環Aが複数存在する場合は同一であっても異なっていてもよい。qは置換数であり、1~4の整数であり、nは繰り返し数であり、0~2の整数である。
L1は、置換若しくは未置換の炭素数6~30の芳香族炭化水素基、置換若しくは未置換の炭素数3~30の芳香族複素環基、又はこれら置換若しくは未置換の芳香族環が2~6つ連結して構成される連結芳香族基を表す。
L2は、単結合、q+1価の置換若しくは未置換の炭素数6~30の芳香族炭化水素基、置換若しくは未置換の炭素数3~30の芳香族複素環基、又はこれらの芳香族炭化水素基又は芳香族複素環基の芳香族環が2~6つ連結して構成される置換若しくは未置換の連結芳香族基を表す。但し、q=1で、かつn=1の場合は、単結合、芳香族複素環基、又は少なくとも1つの芳香族複素環基を含む連結芳香族基である。
L3は独立に、単結合、2価の置換若しくは未置換の炭素数6~30の芳香族炭化水素基、2価の置換若しくは未置換の炭素数3~30の芳香族複素環基、又はこれらの芳香族炭化水素基又は芳香族複素環基の芳香族環が2~6つ連結して構成される置換若しくは未置換の連結芳香族基を表す。) - 一般式(1)において、X1~X3がC-H、N又はC-であることを特徴とする請求項1に記載の有機電界発光素子。
- 一般式(2)において、環Aが式(a1)で表されるC2B10H10の2価のカルボラン基である請求項1に記載の有機電界発光素子。
- 一般式(2)において、L1とL2の環Aに直接結合する芳香族環が同一である請求項1に記載の有機電界発光素子。
- 一般式(2)において、L1及びL2が、置換若しくは未置換のジベンゾフラニル基、又は置換若しくは未置換のジベンゾチオフェニル基である請求項1に記載の有機電界発光素子。
- 一般式(1)で表される化合物と、一般式(2)で表される化合物を含む有機層が、発光性ドーパントを含有する発光層、電子阻止層および正孔阻止層からなる群れから選ばれる少なくとも一つの層である請求項1に記載の有機電界発光素子。
- 上記有機層が、発光性ドーパントを含有する発光層であって、一般式(1)で表される化合物と、一般式(2)で表される化合物をホスト材料として含有することを特徴とする請求項6に記載の有機電界発光素子。
- 発光性ドーパントが遅延蛍光発光性ドーパントであることを特徴とする請求項7に記載の有機電界発光素子。
- 発光性ドーパントが、ルテニウム、ロジウム、パラジウム、銀、レニウム、オスミウム、イリジウム、白金及び金から選ばれる少なくとも一つの金属を含む有機金属錯体であることを特徴とする請求項7に記載の有機電界発光素子。
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CN108987593A (zh) * | 2018-06-29 | 2018-12-11 | 云谷(固安)科技有限公司 | 有机电致发光器件和有机电致发光装置 |
TWI670876B (zh) * | 2017-12-29 | 2019-09-01 | 大陸商昆山國顯光電有限公司 | 有機電致發光裝置 |
EP3653606A1 (en) * | 2018-11-16 | 2020-05-20 | Samsung Display Co., Ltd. | Organic electroluminescence device and compound for organic electroluminescence device |
US11985893B2 (en) | 2019-11-08 | 2024-05-14 | Samsung Display Co., Ltd. | Organic electroluminescence device and aromatic compound for organic electroluminescence device |
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- 2017-03-02 KR KR1020187027861A patent/KR20180122649A/ko active IP Right Grant
- 2017-03-02 US US16/087,622 patent/US20190103564A1/en not_active Abandoned
- 2017-03-02 CN CN201780021028.5A patent/CN109075259B/zh not_active Expired - Fee Related
- 2017-03-02 WO PCT/JP2017/008295 patent/WO2017169497A1/ja active Application Filing
- 2017-03-02 EP EP17774042.0A patent/EP3439059A4/en not_active Withdrawn
- 2017-03-02 JP JP2018508845A patent/JP6883018B2/ja active Active
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI670876B (zh) * | 2017-12-29 | 2019-09-01 | 大陸商昆山國顯光電有限公司 | 有機電致發光裝置 |
US11778908B2 (en) | 2017-12-29 | 2023-10-03 | Kunshan Go-Visionox Opto-Electronics Co., Ltd. | Organic electroluminescent devices |
CN108987593A (zh) * | 2018-06-29 | 2018-12-11 | 云谷(固安)科技有限公司 | 有机电致发光器件和有机电致发光装置 |
CN108987593B (zh) * | 2018-06-29 | 2020-05-08 | 云谷(固安)科技有限公司 | 有机电致发光器件和有机电致发光装置 |
EP3653606A1 (en) * | 2018-11-16 | 2020-05-20 | Samsung Display Co., Ltd. | Organic electroluminescence device and compound for organic electroluminescence device |
CN111196780A (zh) * | 2018-11-16 | 2020-05-26 | 三星显示有限公司 | 有机电致发光装置及用于有机电致发光装置的化合物 |
US11424417B2 (en) | 2018-11-16 | 2022-08-23 | Samsung Display Co., Ltd. | Organic electroluminescence device and compound for organic electroluminescence device |
US11985893B2 (en) | 2019-11-08 | 2024-05-14 | Samsung Display Co., Ltd. | Organic electroluminescence device and aromatic compound for organic electroluminescence device |
Also Published As
Publication number | Publication date |
---|---|
CN109075259B (zh) | 2020-09-15 |
JP6883018B2 (ja) | 2021-06-02 |
JPWO2017169497A1 (ja) | 2019-03-07 |
CN109075259A (zh) | 2018-12-21 |
EP3439059A1 (en) | 2019-02-06 |
TW201802070A (zh) | 2018-01-16 |
EP3439059A4 (en) | 2019-11-13 |
US20190103564A1 (en) | 2019-04-04 |
KR20180122649A (ko) | 2018-11-13 |
TWI724128B (zh) | 2021-04-11 |
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