TWI670876B - 有機電致發光裝置 - Google Patents
有機電致發光裝置 Download PDFInfo
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- TWI670876B TWI670876B TW107124202A TW107124202A TWI670876B TW I670876 B TWI670876 B TW I670876B TW 107124202 A TW107124202 A TW 107124202A TW 107124202 A TW107124202 A TW 107124202A TW I670876 B TWI670876 B TW I670876B
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Abstract
本發明屬於顯示技術領域,具體公開了一種有機電致發光裝置。該有機電致發光裝置包括發光層,發光層中包括由供體分子和受體分子構成的激基複合物,以及用於增大供體分子和受體分子分子間間距的寬能隙材料,可降低所形成激基複合物的HOMO與LUMO軌道重疊程度,減小單線態-三線態能級差,提升激基複合物主體的反向系間竄越速率(kRISC
),增強對客體分子的Föster 能量傳遞,提高裝置效率及壽命。
Description
本發明屬於顯示技術領域,且特別是有關於一種有機電致發光裝置。
有機電致發光裝置(Organic Light-emitting Diodes, OLED)由於超薄、重量輕、能耗低、主動發光、視角寬、響應快等優點,在顯示和照明領域有極大的應用前景,越來越受到人們的重視。
1987年,美國Eastman Kodak公司的鄧青雲(C.W.Tang)和Vanslyke首次報導了基於Alq3
以及三芳胺類的雙層有機電致發光裝置,開啟了OLED研究方向。傳統螢光材料易於合成,價格便宜,材料穩定,裝置壽命較長,但是由於電子自旋禁止躍遷(spin-forbidden transition)的原因最多只能利用25%的單線態激子進行發光,裝置外量子效率往往低於5%,需要進一步提高。
為了降低成本同時突破OLED裝置25%的內量子效率限制,提出了熱活化延遲螢光(TADF, Thermally Activated Delayed Fluorescence)機制。在具有較小單重態-三重態能級差(ΔEST
)的有機小分子材料中,其三重態激子在吸收環境熱能下可通過反向系間竄越(RISC, Reverse Intersystem Crossing)這一過程轉化為單重態激子,理論上其裝置內量子效率能達到100%。但目前報導的TADF材料效率滾降較為嚴重、壽命較短,限制了其在全色顯示和白光照明中的應用。
因此,本發明要解決的技術問題在於克服激基複合物型主體材料的單線態和三線態之間的能級差(△EST
)較大、反向系間竄越速率(kRISC
)較低,發光層中三線態-三線態湮滅(TTA)、極化子湮滅(TPA)較為嚴重,裝置效率、壽命等性能有待進一步提高的問題。
為此,本申請提供一種有機電致發光裝置,包括發光層,所述發光層中包括主體材料和客體材料,所述主體材料包括寬能隙材料及由供體分子與受體分子構成的激基複合物。
可選地,所述寬能隙材料的三線態能級高於所述激基複合物的單線態能級。
可選地,所述供體分子和所述受體分子的三線態能級均高於所述激基複合物的三線態能級。
可選地,所述激基複合物的單線態能級與三線態能級的能級差小於0.15 eV。
可選地,所述寬能隙材料為含哢唑基、芳基、二苯基磷醯基和二苯基醚中至少一種基團的化合物。
可選地,所述寬能隙材料選自以下所示結構的化合物中的至少一種:、、、、、、、、、、、、、、、、、、、、、 、、、、、、、、、、、、、、、、、。
可選地,所述供體分子為含哢唑基、三苯胺基和芳基中至少一種基團的具有電洞傳輸性質的化合物。
可選地,所述供體分子選自如下所示結構的化合物中的至少一種:、、、、、、、、、、、、、、、、、、。
可選地,所述受體分子為含有吡啶基、嘧啶基、三嗪基、哢唑基、芳基、氰基和二苯基膦醯基中至少一種基團的具有電子傳輸性質的化合物。
可選地,所述受體分子選自如下所示結構的化合物中的至少一種:、、、、、、、、、、、、、、、、、、、、、、、、、、、、、、、、。
可選地,在所述激基複合物中,所述供體分子與所述受體分子的質量比1:9~9:1,優選1:5~5:1。
可選地,所述客體材料為螢光摻雜染料,所述螢光摻雜染料選自如下所示結構的化合物中的至少一種:、、、、、、、、、、、、、、、、、、、、、、、。
可選地,所述激基複合物的摻雜比例為5 wt%~80 wt%(激基複合物的摻雜比例是指激基複合物質量占發光層總質量的比值)。
可選地,所述螢光摻雜染料的摻雜比例為0.1 wt%~10 wt%(螢光摻雜染料的摻雜比例是指螢光摻雜染料質量占發光層總質量的比值)。
本發明技術方案,具有如下優點:
本發明提供的有機電致發光裝置,具有第一電極、第二電極以及位於第一電極和第二電極之間的有機功能層,有機功能層包括發光層,發光層包括主體材料和客體材料,主體材料包括寬能隙材料以及由供體分子與受體分子構成的激基複合物。
首先,通過引入寬能隙材料,增大了供體分子和受體分子之間的距離,降低了所形成激基複合物主體的HOMO與LUMO軌道重疊程度,減小了單線態-三線態能級差△EST
,從而提升激基複合物的反向系間竄越速率(kRISC
),激子容易從三線態經歷反向系間竄躍過程回到單線態,大大提高了激子的利用率;同時,也抑制了Dexter能量傳遞,提高了裝置的發光效率。
其次,寬能隙材料的引入增大了激基複合物中供體分子和受體分子彼此之間的距離,降低了發光層中三線態激子濃度,抑制了三線態-三線態湮滅(TTA)和三線態-極化子湮滅(TPA),有助於降低裝置的效率滾降、提高電致發光裝置的壽命。
為了更清楚地說明本發明具體實施方式或現有技術中的技術方案,下面將對具體實施方式或現有技術描述中所需要使用的附圖作簡單地介紹,顯而易見地,下面描述中的附圖是本發明的一些實施方式,對於任何所屬技術領域具有通常知識者而言,還可以根據這些附圖獲得其他的附圖。
下面將結合附圖對本發明的技術方案進行清楚、完整地描述,顯然,所描述的實施例是本發明一部分實施例,而不是全部的實施例。基於本發明中的實施例,任何所屬技術領域具有通常知識者可獲得的所有其他實施例,都屬於本發明保護的範圍。
在本申請的描述中,需要說明的是,術語「第一」、「第二」、「第三」僅用於描述目的,而不能理解為指示或暗示相對重要性。
本發明可以以許多不同的形式實施,而不應該被理解為限於在此闡述的實施例。相反,提供這些實施例,使得本公開將是徹底和完整的,並且將把本發明的構思充分傳達給本發明所屬技術領域具有通常知識者,本發明將僅由申請專利範圍來限定。在附圖中,為了清晰起見,會誇大層和區域的尺寸和相對尺寸。應當理解的是,當元件例如層被稱作「形成在」或「設置在」另一元件「上」時,該元件可以直接設置在所述另一元件上,或者也可以存在中間元件。相反,當元件被稱作「直接形成在」或「直接設置在」另一元件上時,不存在中間元件。
實施例
1
本實施例提供一種有機電致發光裝置,如圖1所示,具有第一電極1、第二電極2以及位於第一電極1和第二電極2之間的有機功能層3。第一電極1為陽極,第二電極2為陰極,有機功能層3包括層疊設置的電洞注入層31、電洞傳輸層32、發光層33、電子傳輸層34以及電子注入層35,即該有機電致發光裝置的結構為:陽極/電洞注入層/電洞傳輸層/發光層/電子傳輸層/電子注入層/陰極。
發光層33由主體材料及摻雜在主體材料中的摻雜材料構成,寬能隙材料和激基複合物通過共蒸鍍的方法構成主體材料,供體分子和受體分子通過共蒸鍍的方法構成激基複合物,寬能隙材料對激基複合物進行稀釋,以增大供體分子和受體分子之間的間距;摻雜材料為螢光摻雜染料。
在發光層33中,激基複合物的摻雜比例為5 wt%~80 wt%,螢光摻雜染料的摻雜比例為0.1 wt%~10 wt%,其餘為寬能隙材料;優選地,激基複合物的含量為20 wt%~50 wt%,螢光摻雜染料的含量為0.1 wt%~3 wt%。其中,激基複合物由供體分子和受體分子構成,供體分子為含哢唑基、三苯胺基和芳基中至少一種基團的具有電洞傳輸性質的化合物,受體分子為含有吡啶基、嘧啶基、三嗪基、哢唑基、芳基、氰基和二苯基膦醯基中至少一種基團的具有電子傳輸性質的化合物。在激基複合物中,供體分子和受體分子的質量比為1:9~9:1,優選1~5:5~1。
本實施例中,選用包含哢唑基和苯基的化合物作為寬能隙材料,具有如式(W-1)所示結構:。
選用包含苯基和哢唑基的化合物作為供體分子,具有式(D-1)所示結構:。
選用包含苯基、三嗪基和哢唑基的化合物作為受體分子,具有如式(A-19)所示結構:。
上述如式(D-1)所示的供體分子和如式(A-19)所示的受體分子構成激基複合物,在該激基複合物中,如式(D-1)所示的供體分子和如式(A-19)所示的受體分子的質量比為1:1。
選用具有如式(F-8)所示結構的螢光摻雜染料作為摻雜材料:。
在有機發光層33中,具有如式(D-1)所示結構的供體分子、具有如式(A-19)所示結構的受體分子所形成激基複合物占發光層33的質量分數為30%,具有如式(F-8)所示結構的螢光摻雜染料占發光層33的質量分數為3%。
本實施例中,有機電致發光裝置中第一電極1選用ITO材料,電洞注入層31選用HATCN,電洞傳輸層32選用TAPC,電子傳輸層34選用BPhen,電子注入層35選用電子注入材料LiF,第二電極2選用Al。
有機電致發光裝置具有如下結構:
ITO / HATCN(10nm)/TAPC(30nm)/式(W-1)(30nm):式(D-1):式(A-19):式(F-8)(3%)/BPhen(40nm)/LiF(1nm)/Al(200nm)。
其中,本實施中相關材料的結構如下圖所示:、、。
作為可替換的實施方式,在激基複合物中,式(D-1)所示的供體分子和式(A-19)所示的受體分子的質量比也可以選擇1:9~9:1範圍內的其它數值,均能實現本發明的目的,屬於本發明的保護範圍。
作為可替換的實施方式,在發光層33中,式(D-1)所示的供體分子和式(A-19)所示的受體分子形成的激基複合物的含量還可以選擇20 wt%~50 wt%範圍內的其它數值,螢光摻雜染料的含量還可以選擇0.1 wt%~3 wt%範圍的其它數值,其餘為寬能隙材料,均能實現本發明的目的,屬於本發明的保護範圍。
作為進一步變形,在發光層33中,式(D-1)所示的供體分子和式(A-19)所示的受體分子形成的激基複合物的含量還可以選擇5 wt%~80 wt%範圍內的其它數值,螢光摻雜染料的含量還可以選擇0.1 wt%~10 wt%範圍的其它數值,其餘為寬頻隙材料,均能實現本發明的目的,屬於本發明的保護範圍。
實施例
2
在實施例2中,OLED裝置可以設計為如下有機電致發光裝置,該有機電致發光裝置的結構包括陽極、電洞注入層、電洞傳輸層、有機發光層、電子傳輸層、電子注入層以及陰極。本實施例中,選用包含芴基的化合物作為寬能隙材料,具有如式(W-25)所示結構:。
選用包含苯基和哢唑基的化合物作為供體分子,具有式(D-1)所示結構:。
選用包含三嗪、苯基、二苯基膦醯基的化合物作為受體分子,具有如式(A-6)所示結構:。
上述具有如式(D-1)所示結構的供體分子和具有如式(A-6)所示結構的受體分子構成激基複合物,在該激基複合物中,如式(D-1)所示的供體分子和如式(A-19)所示的受體分子的質量比為1:1。
選用具有如式(F-11)所示結構的螢光摻雜染料作為摻雜材料:。
在有機發光層33中,具有如式(D-1)所示結構的供體分子、具有如式(A-6)所示結構的受體分子所形成激基複合物占發光層33的質量分數為30%,具有如式(F-11)所示結構的螢光摻雜染料占發光層33的質量分數為1%。
本實施例中,有機電致發光裝置中第一電極1選用ITO材料,電洞注入層31選用HATCN,電洞傳輸層32選用TAPC,電子傳輸層34選用TPBI,電子注入層35選用LiF,第二電極2選用Al。
有機電致發光裝置具有如下結構:
ITO/ HATCN(10nm)/TAPC(30nm)/式(W-25)(30nm):式(D-1):式(A-6):式(F-11)(1%)/TPBI(40nm)/LiF(1nm)/Al(200nm)。
其中,本實施中相關材料的結構如下圖所示:。
實施例
3
本實施例提供一種有機電致發光裝置,其結構同實施例1,有機電致發光裝置與實施例1中提供的有機電致發光裝置區別僅在於:電洞傳輸層由TAPC換為NPB,其分子結構為:。
發光層中的主體材料選擇具有如式(W-19)所示結構的寬頻隙材料以及由具有如式(D-2)所示結構的給體分子和具有如式(A-10)所示結構的受體分子形成的激基複合物,摻雜材料為具有如式(F-10)所示結構的螢光摻雜染料:、、。
在有機發光層33中,具有如式(D-2)所示結構的供體分子、具有如式(A-10)所示結構的受體分子所形成激基複合物占發光層33的質量分數為30%,具有如式(F-19)結構所示的螢光摻雜染料占發光層33的質量分數為0.5%。
有機電致發光裝置具有如下結構:
ITO/ HATCN(10nm)/NPB(40nm)/式(W-19):式(D-2):式(A-10):式(F-10)(0.5%,30nm)/BPhen(40nm)/LiF(1nm)/Al(200nm)。
對比例
1
在本對比例中,選用含有苯基和哢唑基的化合物作為供體分子,具有如式(D-1)所示結構:。
選用含有苯基、三嗪基的化合物作為受體分子,具有如式(A-19)所示結構:。
上述具有如式(D-1)所示結構的供體分子和具有如式(A-19)所示結構的受體分子構成激基複合物,在該激基複合物中,具有如式(D-1)所示結構的供體分子和具有如式(A-19)所示結構的受體分子的質量比為1:1。
選用具有如式(F-8)所示結構的螢光摻雜染料作為摻雜材料:。
在有機發光層33中,具有如式(D-1)所示結構的供體分子、具有如式(A-19)所示結構的受體分子所形成激基複合物占發光層33的質量分數為97%,具有如式(F-8)所示結構的螢光摻雜染料占發光層33的質量分數為3%。
在本對比例中,有機電致發光裝置中第一電極1選用ITO材料,電洞注入層31選用HATCN,電洞傳輸層32選用TAPC,電子傳輸層34選用BPhen,電子注入層35選用電子注入材料LiF,第二電極2選用Al。
有機電致發光裝置具有如下結構:
ITO/HATCN(10nm)/TAPC(30nm)/式(D-1):式(A-19):式(F-8)(3%)/BPhen (40nm) / LiF(1nm) /Al(200nm)。
實施例
4
本實施例與實施例1的不同在於:發光層33中摻雜材料選擇如式(F-5)所示的結構。其中,在發光層33中,激基複合物的質量分數為30%,螢光摻雜染料的質量分數為3%。裝置在5000 cd/m2
亮度下,驅動電壓為4.21 V,色座標為(0.36,0.57),外量子效率為18.1%,滾降為4.54%。
實施例
5
本實施例與實施例1的不同在於:發光層33中主體材料選擇如式(W-4)所示的寬能隙材料,以及由如式(D-17)所示的給體分子為和如式(A-32)所示的受體分子形成的激基複合物;摻雜材料選擇如式(F-6)所示的結構。其中,在該激基複合物中,供體分子、受體分子的質量比為2:1;在發光層33中,激基複合物的質量分數為27%,螢光摻雜染料的質量分數為10%。裝置在5000 cd/m2
亮度下,驅動電壓為4.02 V,色座標為(0.37,0.58),外量子效率為18.5%,滾降為3.83%。
實施例
6
本實施例與實施例1的不同在於:發光層33中主體材料選擇如式(W-15)所示的寬能隙材料,以及由如式(D-8)所示的給體分子為和如式(A-28)所示的受體分子形成的激基複合物;摻雜材料選擇如式(F-7)所示的結構。其中,在該激基複合物中,供體分子、受體分子的質量比為1:7;在發光層33中,激基複合物的質量分數為57%,螢光摻雜染料的質量分數為4%。裝置在5000 cd/m2
亮度下,驅動電壓為4.15 V,色座標為(0.36,0.58),外量子效率為17.8%,滾降為4.58%。
實施例
7
本實施例與實施例1的不同在於:發光層33中主體材料選擇如式(W-21)所示的寬能隙材料,以及由如式(D-14)所示的給體分子為和如式(A-15)所示的受體分子形成的激基複合物;摻雜材料選擇如式(F-11)所示的結構。其中,在該激基複合物中,供體分子、受體分子的質量比為4:7;在發光層33中,激基複合物的質量分數為68%,螢光摻雜染料的質量分數為0.1%。裝置在5000 cd/m2
亮度下,驅動電壓為3.98 V,色座標為(0.49,0.50),外量子效率為15.6%,滾降為4.36%。
實施例
8
本實施例與實施例1的不同在於:發光層33中主體材料選擇如式(W-40)所示的寬能隙材料,以及由如式(D-10)所示的給體分子為和如式(A-7)所示的受體分子形成的激基複合物;摻雜材料選擇如式(F-6)所示的結構。其中,在該激基複合物中,供體分子、受體分子的質量比為9:2;在發光層33中,激基複合物的質量分數為80%,螢光摻雜染料的質量分數為1.5%。裝置在5000 cd/m2
亮度下,驅動電壓為4.26 V,色座標為(0.37,0.58),外量子效率為18.5%,滾降為7.87%。
實施例
9
本實施例與實施例1的不同在於:發光層33中主體材料選擇如式(W-6)所示的寬能隙材料,以及由如式(D-19)所示的給體分子為和如式(A-2)所示的受體分子形成的激基複合物;摻雜材料選擇如式(F-9)所示的結構。其中,在該激基複合物中,供體分子、受體分子的質量比為8:3;在發光層33中,激基複合物的質量分數為5%,螢光摻雜染料的質量分數為1%。裝置在5000 cd/m2
亮度下,驅動電壓為4.31 V,色座標為(0.44,0.45),外量子效率為16.7%,滾降為6.52%。
實施例
10
本實施例與實施例1的不同在於:發光層33中主體材料選擇如式(W-28)所示的寬能隙材料,以及由如式(D-15)所示的給體分子為和如式(A-13)所示的受體分子形成的激基複合物;摻雜材料選擇如式(F-10)所示的結構。其中,在該激基複合物中,供體分子、受體分子的質量比為4:1;在發光層33中,激基複合物的質量分數為11%,螢光摻雜染料的質量分數為2.8%。裝置在5000 cd/m2
亮度下,驅動電壓為4.40V,色座標為(0.45,0.45),外量子效率為16.9%,滾降為6.61%。
實施例
11
本實施例與實施例1的不同在於:發光層33中主體材料選擇如式(W-32)所示的寬能隙材料,以及由如式(D-16)所示的給體分子為和如式(A-18)所示的受體分子形成的激基複合物;摻雜材料選擇如式(F-8)所示的結構。其中,在該激基複合物中,供體分子、受體分子的質量比為3:7;在發光層33中,激基複合物的質量分數為20%,螢光摻雜染料的質量分數為7%。裝置在5000 cd/m2
亮度下,驅動電壓為4.23 V,色座標為(0.36,0.58),外量子效率為18.8%,滾降為5.56%。
實施例
12
本實施例與實施例1的不同在於:發光層33中主體材料選擇如式(W-14)所示的寬能隙材料,以及由如式(D-12)所示的給體分子為和如式(A-27)所示的受體分子形成的激基複合物;摻雜材料選擇如式(F-10)所示的結構。其中,在該激基複合物中,供體分子、受體分子的質量比為1:1;在發光層33中,激基複合物的質量分數為50%,螢光摻雜染料的質量分數為5%。裝置在5000 cd/m2
亮度下,驅動電壓為4.52 V,色座標為(0.44,0.45),外量子效率為17.8%,滾降為7.10%。
實施例
13
本實施例與實施例1的不同在於:發光層33中主體材料選擇如式(W-8)所示的寬能隙材料,以及由如式(D-4)所示的給體分子為和如式(A-28)所示的受體分子形成的激基複合物;摻雜材料選擇如式(F-11)所示的結構。其中,在該激基複合物中,供體分子、受體分子的質量比為8:1;在發光層33中,激基複合物的質量分數為18%,螢光摻雜染料的質量分數為9%。裝置在5000 cd/m2
亮度下,驅動電壓為4.56 V,色座標為(0.49,0.50),外量子效率為16.6%,滾降為6.23%。
實施例
14
本實施例與實施例1的不同在於:發光層33中主體材料選擇如式(W-17)所示的寬能隙材料,以及由如式(D-6)所示的給體分子為和如式(A-31)所示的受體分子形成的激基複合物;摻雜材料選擇如式(F-19)所示的結構。其中,在該激基複合物中,供體分子、受體分子的質量比為5:1;在發光層33中,激基複合物的質量分數為65%,螢光摻雜染料的質量分數為5%。裝置在5000 cd/m2
亮度下,驅動電壓為4.12 V,色座標為(0.59,0.40),外量子效率為15.5%,滾降為7.12%。
實施例
15
本實施例與實施例1的不同在於:發光層33中主體材料選擇如式(W-22)所示的寬能隙材料,以及由如式(D-3)所示的給體分子為和如式(A-16)所示的受體分子形成的激基複合物;摻雜材料選擇如式(F-20)所示的結構。其中,在該激基複合物中,供體分子、受體分子的質量比為7:2;在發光層33中,激基複合物的質量分數為45%,螢光摻雜染料的質量分數為2.5%。裝置在5000 cd/m2
亮度下,驅動電壓為4.23 V,色座標為(0.59,0.41),外量子效率為14.5%,滾降為5.76%。
實施例
16
本實施例與實施例1的不同在於:發光層33中主體材料選擇如式(W-37)所示的寬能隙材料,以及由如式(D-11)所示的給體分子為和如式(A-33)所示的受體分子形成的激基複合物;摻雜材料選擇如式(F-20)所示的結構。其中,在該激基複合物中,供體分子、受體分子的質量比為1:2;在發光層33中,激基複合物的質量分數為25%,螢光摻雜染料的質量分數為1.8%。裝置在5000 cd/m2
亮度下,驅動電壓為4.31 V,色座標為(0.59,0.41),外量子效率為14.6%,滾降為6.78%。
作為可選地實施方式,以上實施例中,寬能隙材料可以選用具有如式(W-1)~式(W-40)任一所示結構的化合物替換。
作為可選地實施方式,以上實施例中,供體分子可以選用具有如式(D-1)~式(D-19)任一所示結構的化合物替換。
作為可選地實施方式,以上實施例中,受體分子可以選用具有如式(A-1)~式(A-33)任一所示結構的化合物替換。
作為可選地實施方式,以上實施例中,螢光摻雜染料可以選用具有如式(F-1)~式(F-24)任一所示結構的化合物替換。
作為可選地實施方式,以上實施例中,供體分子與所述受體分子的質量比可以取1:9~9:1範圍內任一比值,作為優選地實施方式,以上實施例中,供體分子與所述受體分子的質量比可以取1:5~5:1範圍內任一比值。
作為可選地實施方式,以上實施例中,激基複合物的摻雜比例可以5 wt%~80 wt%範圍內任一值;螢光摻雜染料的摻雜比例可以為0.1 wt%~10 wt%範圍內任一值。
測試例
1
將實施例1-3和對比例1OLED裝置的電壓、亮度、效率、發光光譜等特性進行測試,性能測試結果如下表1所示:
表1
從表1可以看出,在採用實施例1-3以及對比例1提供的材料製備的OLED裝置中,實施例1-3的OLED裝置的驅動電壓、外量子效率和滾降均優於對比例1的OLED裝置。這由於實施例1-3提供的發光層中引入了能隙主體材料,增大了供體分子和受體分子之間的距離,降低了所形成激基複合物主體的HOMO與LUMO軌道重疊程度,減小了單線態-三線態能級差△EST
,從而提升激基複合物的反向系間竄越速率(kRISC
),激子容易從三線態經歷反向系間竄躍過程回到單線態,大大提高了激子的利用率;同時,也抑制了Dexter能量傳遞,提高了裝置的發光效率,如圖2所示。
寬能隙材料的引入增大了激基複合物中供體分子和受體分子彼此之間的距離,降低了發光層中的三線態激子濃度,抑制了三線態-三線態湮滅(TTA)和三線態-極化子湮滅(TPA),有助於降低裝置的效率滾降、提高電致發光裝置的壽命。
如圖3所示,縱坐標為外量子效率,橫坐標為亮度,實施例1的OLED裝置在相同亮度下的電致發光性能要優於對比例1的OLED裝置,這說明,通過引入寬能隙材料,比不含寬能隙材料時裝置性能好,表現在外量子效率;如圖4所示,供體與受體摻雜的光致發射光譜與相應的供體和受體分子相比,半峰寬變寬且有明顯的紅移,證明了激基複合物的產生; 如圖5所示,實施例1與對比例1的有機電致發光裝置發光光譜。
顯然,上述實施例僅僅是為清楚地說明所作的舉例,而並非對實施方式的限定。對於任何所屬技術領域具有通常知識者而言,在上述說明的基礎上還可以做出其它不同形式的變化或變動。這裡無需也無法對所有的實施方式予以窮舉。而由此所引伸出的顯而易見的變化或變動仍處於本發明的保護範圍之中。
1‧‧‧第一電極
2‧‧‧第二電極
3‧‧‧有機功能層
31‧‧‧電洞注入層
32‧‧‧電洞傳輸層
33‧‧‧發光層
34‧‧‧電子傳輸層
35‧‧‧電子注入層
圖1為本發明實施例1中有機電致發光裝置的結構示意圖。 圖2為本發明有機電致發光裝置發光過程中能量轉移示意圖。 圖3為本發明實施例1與對比例1電致發光裝置外量子效率對比。 圖4為本發明實施例1中給體分子和受體分子形成的激基複合物光譜。 圖5為本發明實施例1與對比例1電致發光光譜。
Claims (7)
- 一種有機電致發光裝置,包括:第一電極以及第二電極;發光層,位於該第一電極與該第二電極之間,其中所述發光層中包括:螢光摻雜染料;以及主體材料,所述主體材料包括寬能隙材料及由供體分子與受體分子構成的激基複合物,其中所述寬能隙材料包括含有哢唑基、芳基、二苯基磷醯基及二苯基醚中至少一種基團的化合物,且所述寬能隙材料的三線態能級高於所述激基複合物的單線態能級,其中所述供體分子包括含哢唑基、三苯胺基及芳基中至少一種基團的具有電洞傳輸性質的化合物;及/或所述受體分子包括含有吡啶基、嘧啶基、三嗪基、哢唑基、芳基、氰基及二苯基膦醯基中至少一種基團的具有電子傳輸性質的化合物。
- 如申請專利範圍第1項所述的有機電致發光裝置,其中所述供體分子及所述受體分子的三線態能級均高於所述激基複合物的三線態能級。
- 如申請專利範圍第1項所述的有機電致發光裝置,其中所述激基複合物的單線態能級與三線態能級的能級差小於0.15eV。
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TW201735392A (zh) * | 2016-03-18 | 2017-10-01 | 半導體能源研究所股份有限公司 | 發光元件、顯示裝置、電子裝置、和照明裝置 |
WO2017169497A1 (ja) * | 2016-03-28 | 2017-10-05 | 新日鉄住金化学株式会社 | 有機電界発光素子 |
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CN109994634A (zh) | 2019-07-09 |
US20200083461A1 (en) | 2020-03-12 |
WO2019128105A1 (zh) | 2019-07-04 |
US11778908B2 (en) | 2023-10-03 |
TW201838219A (zh) | 2018-10-16 |
CN109994634B (zh) | 2020-12-11 |
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