WO2017163520A1 - 太陽電池、太陽電池モジュールおよび太陽電池の製造方法 - Google Patents
太陽電池、太陽電池モジュールおよび太陽電池の製造方法 Download PDFInfo
- Publication number
- WO2017163520A1 WO2017163520A1 PCT/JP2016/088582 JP2016088582W WO2017163520A1 WO 2017163520 A1 WO2017163520 A1 WO 2017163520A1 JP 2016088582 W JP2016088582 W JP 2016088582W WO 2017163520 A1 WO2017163520 A1 WO 2017163520A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- type
- solar cell
- doped region
- silicon substrate
- surface side
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 128
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 116
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 66
- 239000010703 silicon Substances 0.000 claims abstract description 66
- 239000002019 doping agent Substances 0.000 claims abstract description 55
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 62
- 239000007864 aqueous solution Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 10
- 230000002378 acidificating effect Effects 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 210
- 239000004065 semiconductor Substances 0.000 description 39
- 239000000463 material Substances 0.000 description 22
- 230000006798 recombination Effects 0.000 description 22
- 238000005215 recombination Methods 0.000 description 22
- 230000004048 modification Effects 0.000 description 20
- 238000012986 modification Methods 0.000 description 20
- 238000010248 power generation Methods 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 16
- 239000000243 solution Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 230000001629 suppression Effects 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 4
- 235000011007 phosphoric acid Nutrition 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- QVLTXCYWHPZMCA-UHFFFAOYSA-N po4-po4 Chemical compound OP(O)(O)=O.OP(O)(O)=O QVLTXCYWHPZMCA-UHFFFAOYSA-N 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present disclosure relates to a solar cell, a solar cell module, and a method for manufacturing a solar cell.
- a solar cell which is one embodiment of the present disclosure includes a first conductivity type silicon substrate and a second conductivity type amorphous silicon layer located on the first main surface side of the silicon substrate, A first main surface side high region having a dopant concentration of the first conductivity type higher than that of the lightly doped region provided between the lightly doped region doped in the first conductivity type and the lightly doped region and the amorphous silicon layer. And a doped region.
- the requirement “the second conductive type amorphous silicon layer located on the first main surface side of the silicon substrate” is that the second conductive type amorphous silicon layer is on the first main surface side of the silicon substrate. Filled when touching.
- the requirement “the second conductive type amorphous silicon layer located on the first main surface side of the silicon substrate” is that the second conductive type amorphous silicon layer is a layer such as an intrinsic semiconductor layer. This is also the case when facing the first main surface of the silicon substrate in a state of being sandwiched between the first main surface of the silicon substrate.
- the first main surface side highly doped region 12 is an n + region doped with more n-type dopant than the lightly doped region 11.
- Each of the lightly doped region 11 and the first main surface side highly doped region 12 is formed using an ion implantation method, a thermal diffusion method, a plasma doping method, an epitaxial growth method, or the like.
- As the n-type dopant P, As, Sb or the like is used, and P is particularly preferably used.
- P is preferably doped in a state in which defect generation is suppressed by performing heat treatment by mixing POCl 3 gas.
- the ion implantation method it is preferable to use high temperature annealing or RTA (Rapid Thermal Annealing) together in order to reduce defects caused by the ion implantation.
- FIG. 13 is a cross-sectional view of a solar cell module 50 configured using the solar cell 10 illustrated in FIG.
- the solar cell module 50 includes a plurality of solar cells 10, a front surface side protective material 51 provided on the light incident surface side of the plurality of solar cells 10, and a back surface side protective material provided on the back surface side of the plurality of solar cells 10. 54.
- the solar cell module 10 includes a front surface side sealing material 52 filled between the front surface side protective material 51 and the solar cell 10, and a back surface side filled between the back surface side protective material 54 and the solar cell 10. And a sealing material 53.
- the plurality of solar cells 10 are sandwiched between the protective materials with the front side collector electrode 9 facing the light incident surface side of the solar cell module 50 and the back side collector electrode 7 facing the back side of the solar cell module 50.
- the solar cell module 50 of the present embodiment includes the solar cell module 150 of the reference example and As a result, the output loss is greatly reduced.
- one bypass diode 30 is connected to each string unit 22 in parallel. This is because, when a plurality of solar cells 10 in the same string unit 22 are shaded, output loss may be reduced by bypassing the same string unit 22.
- a recombination suppressing layer other than those layers may be formed on the second main surface side of the n-type silicon substrate 1.
- a recombination suppression layer made of a material selected from the following (7) to (12) including those layers can be suitably formed.
- the recombination suppression layer containing an n-type layer other than this, for example, the recombination suppression layer containing the n-type layer which is not hydrogenated can also be formed.
- the above “high concentration” is explained by taking “n-type a-Si: H / stacked n-type a-Si: H of high concentration” as an example. Means high concentration. That is, the description means a structure in which two layers having different dopant amounts are laminated.
- Second main surface side highly doped region 213 has an n-type average dopant concentration higher than that of lightly doped region 11.
- the n-type average doping concentration of the second main surface side highly doped region 213 may be the same as or different from the n-type average doping concentration of the first main surface side highly doped region 12.
- the n-type average doping concentration of the second main surface side highly doped region 213 can be appropriately changed, but is preferably 1 ⁇ 10 18 cm ⁇ 3 or more, for example, 2 ⁇ 10 18 cm ⁇ 3 to 2.5 ⁇ 10 18 cm. -3 .
- the first and second i-type amorphous silicon layers 2 and 4 may contain a small amount of dopant.
- the second main surface side highly doped region 213 having a higher surface dopant concentration than the lightly doped region 11 is provided between the lightly doped region 11 and the n-type amorphous silicon layer 5.
- the recombination of photogenerated carriers can be suppressed and the output can be increased.
- the n-type surface doping concentration of the first main surface side highly doped region 12 is set to 1 ⁇ 10 18 cm ⁇ 3 or more
- the n-type surface doping concentration of the second main surface side highly doped region 213 is 1 ⁇ 10 17.
- it is set to cm ⁇ 3 or more.
- the n-type surface doping concentration of the first main surface side highly doped region 12 is more preferably 1 ⁇ 10 19 cm ⁇ 3 or more and 5 ⁇ 10 19 cm ⁇ 3 or less.
- FIG. 8 is a schematic cross-sectional view of the main part of the solar cell 310 of the third embodiment.
- the transparent conductive layer and the collector electrode are not shown.
- the same reference number is attached
- the description of the operational effects and modifications common to the solar cells 10 and 210 of the first and second embodiments will be omitted.
- the configuration, operational effects, and modifications different from the solar cells of the first and second embodiments 10 and 210 will be described.
- the n-type crystalline silicon substrate 301 has a first laterally highly doped region 314 a on one side in a direction substantially orthogonal to the thickness direction of the n-type lightly doped region 11. Further, the n-type crystalline silicon substrate 301 has a second lateral highly doped region 314b on the other side of the n-type lightly doped region 11 in the substantially orthogonal direction. Each of the first and second lateral highly doped regions 314 a and 314 b extends in the thickness direction of the n-type crystalline silicon substrate 301.
- the first laterally highly doped region 314a connects the first principal surface side highly doped region 12 and the second principal surface side highly doped region 213 on one side in the substantially orthogonal direction.
- the second laterally highly doped region 314b connects the first principal surface side highly doped region 12 and the second principal surface side highly doped region 213 on the other side in the substantially orthogonal direction.
- Each of the first and second lateral highly doped regions 314a and 314b has an n-type average dopant concentration of 1 ⁇ 10 18 cm ⁇ 3 or more, for example, 2 ⁇ 10 18 cm ⁇ 3 to 2.5 ⁇ 10 18 cm ⁇ 3. Preferably it has.
- the layer thickness in the direction perpendicular to the substrate thickness direction in each of the first and second lateral highly doped regions 314a and 314b can be appropriately changed according to the specifications.
- the layer thickness in the direction perpendicular to the substrate thickness direction in each of the first and second lateral highly doped regions 314a and 314b can be, for example, 200 nm or less, but may be in the range of several nm to 500 nm, and 15 nm to 200 nm. More preferably, the thickness is 50 nm to 100 nm.
- both side surfaces of the n-type crystalline silicon substrate 301 are covered with the first and second laterally highly doped regions 314a and 314b, the surface reconstruction of both side surfaces of the n-type crystalline silicon substrate 301 is performed. Coupling can be reduced and power generation performance can be improved.
- the n-type heavily doped region is provided so as to surround the low-doped region 11 of n-type crystalline silicon substrate 301, the highly doped regions 12,213,314A, the 314b, thermal diffusion or the like using POCl 3 gas Thus, it can be simultaneously and easily formed around the lightly doped region 11. Therefore, the number of manufacturing steps of the solar cell 310 can be reduced, and the cycle time can be shortened.
- all of the highly doped regions 12, 213, 314a and 314b are preferably 1 ⁇ 10 18 cm ⁇ 3 or more and have the same n-type average dopant concentration, and are preferably 1 ⁇ 10 19 cm ⁇ 3 or more and 5 ⁇ 10 19 cm. More preferably, it has an n-type average dopant concentration of -3 or less.
- the side highly doped region may be provided only on one side surface of the n-type lightly doped region 11.
- the first main surface side highly doped region may be provided only at both ends in a direction substantially orthogonal to the thickness direction of the n-type silicon substrate 401.
- the transparent conductive layer and the collector electrode are not shown.
- the solar cell 510 of the fourth embodiment is different from the first to third embodiments in that a p-type semiconductor layer 550 and an n-type semiconductor layer 560 are provided on the first main surface side of the n-type crystalline silicon substrate 501. .
- the solar cell 510 includes an n-type crystalline silicon substrate (hereinafter simply referred to as a substrate) 501, a p-type semiconductor layer 550 and an n-type semiconductor layer formed on the first main surface of the substrate 501. 560.
- the p-type semiconductor layer 550 and the n-type semiconductor layer 560 have portions that overlap with each other in the thickness direction, and an insulating layer 570 is provided between the overlapping portions in the thickness direction.
- the light receiving surface of the substrate 501 corresponds to a surface opposite to the first main surface of the substrate 501.
- Solar cell 510 has an n-type lightly doped region 511 and an n-type first main surface side highly doped region 512.
- the n-type first main surface side highly doped region 512 has a higher n-type average doping concentration than the n-type lightly doped region 511.
- the n-type first main surface side highly doped region 512 is formed on the entire surface of the n-type lightly doped region 511 opposite to the light receiving surface side.
- Solar cell 510 includes a pair of electrodes formed only on the back side of n-type crystalline silicon substrate 501. Holes generated in the power generation region are collected by the p-side electrode, and electrons are collected by the n-side electrode.
- the p-type semiconductor layer 550 and the n-type semiconductor layer 560 are both stacked on the back surface of the n-type crystalline silicon substrate 501, and a p-type region and an n-type region are formed on the back surface.
- the p-type region and the n-type region are alternately arranged in one direction and are formed in a comb-like pattern in plan view that meshes with each other.
- a part of the p-type semiconductor layer 550 overlaps a part of the n-type semiconductor layer 560, and each semiconductor layer (p-type region, n-type is formed on the back surface of the n-type crystalline silicon substrate 501. Mold region) is formed without gaps.
- FIG. 11 is a schematic cross-sectional view of a solar cell 610 according to a modification of the fourth embodiment.
- the same components as those of the fourth embodiment are denoted by the same reference numerals, and description thereof is omitted.
- the first main surface side highly doped region 612 is only in a part between the n type lightly doped region 611 and the p type semiconductor layer 550 in the n type crystalline silicon substrate 601.
- the first main surface side highly doped region is provided in the entire region between the n type low doped region and the p type semiconductor layer in the n type crystalline silicon substrate, and the n type low doped region in the n type crystalline silicon substrate. May be provided only in a part between the n-type semiconductor layer and the n-type semiconductor layer.
- the first main surface side highly doped region is provided only in a part between the n type low doped region and the p type semiconductor layer in the n type crystalline silicon substrate, and the n type low silicon region in the n type crystalline silicon substrate. It may be provided only in a part between the doped region and the n-type semiconductor layer.
- FIG. 12 is a diagram showing a method for forming the highly doped regions 12, 213, 314a and 314b in this modification.
- the same number is attached
- the oxide layer 370 containing P formed by a silicon oxidizing chemical solution may cover the entire surface of the n-type crystalline silicon substrate 301, or may be formed partially or in an island shape.
- the thickness and formation area of the oxide layer 370 are the mixing ratio of the plurality of acid aqueous solutions contained in the silicon oxidizing chemical solution when forming the oxide layer 370, the concentration of each acid aqueous solution, and the temperature at which the oxide layer 370 is formed. And it can adjust with formation time etc.
- the depth at which P diffuses and the P concentration can be adjusted by adjusting the heat treatment temperature, the heat treatment time, and the like.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
図1は、第1実施形態の太陽電池モジュール50の主要部を示す模式構成図である。
図7は、第2実施形態の太陽電池210の主要部における模式断面図である。図7では、透明導電層及び集電極は、図示を省略する。第2実施形態の太陽電池では、第1実施形態の太陽電池の構成部と同一構成部には同一参照番号を付して説明を省略する。第2実施形態の太陽電池では、第1実施形態の太陽電池と共通の作用効果および変形例については説明を省略し、第1実施形態の太陽電池と異なる構成、作用効果および変形例についてのみ説明を行う。
図8は、第3実施形態の太陽電池310の主要部における模式断面図である。図8では、透明導電層及び集電極は、図示を省略する。第3実施形態の太陽電池310では、第2実施形態の太陽電池210の構成部と同一構成部には同一参照番号を付して説明を省略する。第3実施形態の太陽電池310では、第1および第2実施形態の太陽電池10,210と共通の作用効果および変形例については説明を省略する。第3実施形態の太陽電池310では、第1および第2実施形態10,210の太陽電池と異なる構成、作用効果および変形例についてのみ説明を行う。
図10は、第4実施形態の太陽電池510の模式断面図である。第4実施形態の太陽電池510では、第1実施形態の太陽電池10と共通の作用効果および変形例については説明を省略し、第1実施形態の太陽電池10と異なる構成、作用効果および変形例についてのみ説明を行う。
上述の各実施形態においては、イオン注入法、熱拡散法、プラズマドープ法またはエピタキシャル成長法等によって高ドープ領域を形成したが、熱拡散法の一例として、所定導電型の高ドープ領域は、結晶性シリコン基板の表面に該所定導電型ドーパントを含む溶液を接触させる工程の後に、当該結晶性シリコン基板の熱処理工程を行うことによって、該所定導電型ドーパントを結晶性シリコン基板に拡散させる方法によって形成してもよい。また、前記溶液として所定導電型ドーパントを含み且つシリコンを酸化させる溶液を準備し、当該結晶性シリコン基板にこの溶液を接触させて結晶性シリコン基板の表面に該所定導電型ドーパントを含むシリコン酸化層を形成し、その後、熱処理工程によって、当該シリコン酸化層から結晶性シリコン基板の表面へと所定導電型ドーパントを拡散させる方法で形成してもよい。例えば、n型の高ドープ領域は、P、As、Sb等のn型ドーパントを含む溶液を用いて形成してよく、特に好ましいn型ドーパントであるPを用いる場合について、第3実施形態の変形例を挙げて詳しく説明する。
Claims (13)
- 第1導電型のシリコン基板と、
前記シリコン基板の第1主面側に位置する第2導電型の非晶質シリコン層と、
を備え、
前記シリコン基板は、前記第1導電型にドーピングされた低ドープ領域と、前記低ドープ領域と前記非晶質シリコン層との間に設けられ、前記低ドープ領域よりも高い前記第1導電型のドーパント濃度を有する第1主面側高ドープ領域とを有する、太陽電池。 - 請求項1に記載の太陽電池において、
前記シリコン基板の第2主面側に位置する前記第1導電型の非晶質シリコン層を備え、
前記シリコン基板は、前記低ドープ領域と前記第1導電型の非晶質シリコン層との間に設けられ、前記低ドープ領域よりも高い前記第1導電型のドーパント濃度を有する第2主面側高ドープ領域を有する、太陽電池。 - 請求項1または2に記載の太陽電池において、
前記シリコン基板は、前記シリコン基板の厚さ方向に延在する側面を覆うように設けられ、前記低ドープ領域よりも高い前記第1導電型のドーパント濃度を有する側方高ドープ領域を有する、太陽電池。 - 請求項1乃至3のいずれか一つに記載の太陽電池において、
前記第1主面側高ドープ領域が、前記シリコン基板の厚さ方向に略直交する方向の両端部に設けられる、太陽電池。 - 請求項1乃至4のいずれか一つに記載の太陽電池において、
前記第1主面側高ドープ領域における表面ドーパント濃度が、1×1018cm-3以上である、太陽電池。 - 請求項1乃至5のいずれか一つに記載の太陽電池において、
前記低ドープ領域は、n型結晶性シリコンからなり、
前記第1主面側高ドープ領域は、前記低ドープ領域よりも多くのn型ドーパントがドーピングされたn+領域である、太陽電池。 - 請求項1乃至6のいずれか一つに記載の太陽電池において、
前記シリコン基板の前記第1主面は、非光入射面である、太陽電池。 - 請求項1に記載の太陽電池において、
前記シリコン基板の前記第1主面側に、前記第2導電型の非晶質シリコンに前記シリコン基板の厚さ方向に略直交する方向に隣り合う第1導電型の非晶質シリコン層を更に備える、太陽電池。 - 直列接続された請求項1乃至8のいずれか1つに記載の太陽電池を複数備える、太陽電池モジュール。
- 請求項9に記載の太陽電池モジュールにおいて、
前記複数の太陽電池に含まれる直列接続された2以上の前記太陽電池に並列接続されたバイパスダイオードを備える、太陽電池モジュール。 - n型ドーパントを含む酸性水溶液にn型結晶性シリコン基板を浸漬して、当該基板の表面にn型ドーパントを含むシリコン酸化層を形成する工程と、
前記n型結晶性シリコン基板を熱処理して、前記シリコン酸化層から前記n型結晶性シリコン基板の内部に前記n型ドーパントを拡散させ、少なくとも前記n型結晶性シリコン基板の前記シリコン酸化層との界面に他の領域よりも前記n型ドーパントの濃度が高いn+領域を形成する工程と、
前記シリコン酸化層を除去して前記n型結晶性シリコン基板の前記n+領域を露出させる工程と、
前記シリコン酸化層が除去された前記n型結晶性シリコン基板の第1主面側にp型非晶質シリコン層を形成する工程と、
を備える、太陽電池の製造方法。 - 請求項11に記載の太陽電池の製造方法において、
前記シリコン酸化層が除去された前記n型結晶性シリコン基板の第2主面側n型非晶質シリコン層を形成する工程を備える、太陽電池の製造方法。 - 請求項11または12に記載の太陽電池の製造方法において、
前記酸性水溶液には、リン酸および硝酸が含まれる、太陽電池の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16895543.3A EP3435426B1 (en) | 2016-03-23 | 2016-12-22 | Solar cell, solar cell module, and method for manufacturing solar cell |
JP2018506781A JP6706808B2 (ja) | 2016-03-23 | 2016-12-22 | 太陽電池、太陽電池モジュールおよび太陽電池の製造方法 |
ES16895543T ES2817539T3 (es) | 2016-03-23 | 2016-12-22 | Célula solar, módulo de célula solar y procedimiento de fabricación de célula solar |
CN201680083910.8A CN108886068B (zh) | 2016-03-23 | 2016-12-22 | 太阳能电池、太阳能电池组件和太阳能电池的制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016057960 | 2016-03-23 | ||
JP2016-057960 | 2016-03-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017163520A1 true WO2017163520A1 (ja) | 2017-09-28 |
Family
ID=59901037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/088582 WO2017163520A1 (ja) | 2016-03-23 | 2016-12-22 | 太陽電池、太陽電池モジュールおよび太陽電池の製造方法 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP3435426B1 (ja) |
JP (1) | JP6706808B2 (ja) |
CN (1) | CN108886068B (ja) |
ES (1) | ES2817539T3 (ja) |
WO (1) | WO2017163520A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021044384A (ja) * | 2019-09-11 | 2021-03-18 | パナソニック株式会社 | 太陽電池セル |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05110121A (ja) * | 1991-10-17 | 1993-04-30 | Sharp Corp | 太陽電池 |
JP2006237363A (ja) * | 2005-02-25 | 2006-09-07 | Sanyo Electric Co Ltd | 光起電力素子 |
JP2013069760A (ja) * | 2011-09-21 | 2013-04-18 | Shin Etsu Chem Co Ltd | 太陽電池および太陽電池の製造方法 |
JP2014093418A (ja) * | 2012-11-02 | 2014-05-19 | Mitsubishi Electric Corp | 光起電力装置およびその製造方法、光起電力モジュール |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19910816A1 (de) * | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
DE102008030693A1 (de) * | 2008-07-01 | 2010-01-14 | Institut Für Solarenergieforschung Gmbh | Heterojunction-Solarzelle mit Absorber mit integriertem Dotierprofil |
US9054256B2 (en) * | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
DE102012104289A1 (de) * | 2012-05-16 | 2013-11-21 | Roth & Rau Ag | Heterokontakt-Solarzelle und Verfahren zu deren Herstellung |
US20140261660A1 (en) * | 2013-03-13 | 2014-09-18 | Intermolecular , Inc. | TCOs for Heterojunction Solar Cells |
-
2016
- 2016-12-22 WO PCT/JP2016/088582 patent/WO2017163520A1/ja active Application Filing
- 2016-12-22 JP JP2018506781A patent/JP6706808B2/ja active Active
- 2016-12-22 CN CN201680083910.8A patent/CN108886068B/zh active Active
- 2016-12-22 ES ES16895543T patent/ES2817539T3/es active Active
- 2016-12-22 EP EP16895543.3A patent/EP3435426B1/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05110121A (ja) * | 1991-10-17 | 1993-04-30 | Sharp Corp | 太陽電池 |
JP2006237363A (ja) * | 2005-02-25 | 2006-09-07 | Sanyo Electric Co Ltd | 光起電力素子 |
JP2013069760A (ja) * | 2011-09-21 | 2013-04-18 | Shin Etsu Chem Co Ltd | 太陽電池および太陽電池の製造方法 |
JP2014093418A (ja) * | 2012-11-02 | 2014-05-19 | Mitsubishi Electric Corp | 光起電力装置およびその製造方法、光起電力モジュール |
Also Published As
Publication number | Publication date |
---|---|
JPWO2017163520A1 (ja) | 2018-12-27 |
ES2817539T3 (es) | 2021-04-07 |
EP3435426B1 (en) | 2020-07-01 |
CN108886068A (zh) | 2018-11-23 |
EP3435426A1 (en) | 2019-01-30 |
EP3435426A4 (en) | 2019-04-03 |
JP6706808B2 (ja) | 2020-06-10 |
CN108886068B (zh) | 2022-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8569100B2 (en) | Solar cell and manufacturing method thereof | |
JP5025184B2 (ja) | 太陽電池素子及びこれを用いた太陽電池モジュール、並びに、これらの製造方法 | |
JP5570654B2 (ja) | 太陽電池素子および太陽電池モジュール | |
US9929294B2 (en) | Photoelectric conversion device, manufacturing method thereof, and photoelectric conversion module | |
KR101387718B1 (ko) | 태양 전지 및 이의 제조 방법 | |
US11961930B2 (en) | Crystalline silicon solar cell and preparation method therefor, and photovoltaic assembly | |
JP2013239476A (ja) | 光起電力装置およびその製造方法、光起電力モジュール | |
KR101878397B1 (ko) | 태양전지 및 그 제조 방법 | |
JP5927027B2 (ja) | 光電変換装置 | |
CN103681953A (zh) | 制造太阳能电池的方法 | |
WO2018025643A1 (ja) | 太陽電池セルおよび太陽電池セルの製造方法 | |
JP6207414B2 (ja) | 光起電力素子およびその製造方法 | |
CN117374169A (zh) | 背接触太阳能电池的制备方法及背接触太阳能电池 | |
KR20120087513A (ko) | 태양 전지 및 그 제조 방법 | |
JP6706779B2 (ja) | 太陽電池および太陽電池モジュール | |
US10784396B2 (en) | Solar cell, solar cell module, and production method for solar cell | |
US20190181288A1 (en) | Solar cell with high photoelectric conversion efficiency and method for manufacturing solar cell with high photoelectric conversion efficiency | |
JP6706808B2 (ja) | 太陽電池、太陽電池モジュールおよび太陽電池の製造方法 | |
JP5645734B2 (ja) | 太陽電池素子 | |
CN110800114B (zh) | 高效背面电极型太阳能电池及其制造方法 | |
US10923610B2 (en) | Solar cell and solar cell module | |
CN112670368A (zh) | 用于制造太阳能电池的方法和太阳能电池 | |
KR20190041989A (ko) | 태양 전지 제조 방법 및 태양 전지 | |
JP2011018748A (ja) | 太陽電池セルの製造方法 | |
KR20170090781A (ko) | 태양 전지 및 이의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 2018506781 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2016895543 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 2016895543 Country of ref document: EP Effective date: 20181023 |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16895543 Country of ref document: EP Kind code of ref document: A1 |