JPWO2017163520A1 - 太陽電池、太陽電池モジュールおよび太陽電池の製造方法 - Google Patents
太陽電池、太陽電池モジュールおよび太陽電池の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 128
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 116
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 67
- 239000010703 silicon Substances 0.000 claims abstract description 67
- 239000002019 doping agent Substances 0.000 claims abstract description 55
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 25
- 239000007864 aqueous solution Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
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- 230000002378 acidificating effect Effects 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 212
- 239000004065 semiconductor Substances 0.000 description 39
- 239000000463 material Substances 0.000 description 22
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
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- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
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- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
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- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- QVLTXCYWHPZMCA-UHFFFAOYSA-N po4-po4 Chemical compound OP(O)(O)=O.OP(O)(O)=O QVLTXCYWHPZMCA-UHFFFAOYSA-N 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
Description
図1は、第1実施形態の太陽電池モジュール50の主要部を示す模式構成図である。
図7は、第2実施形態の太陽電池210の主要部における模式断面図である。図7では、透明導電層及び集電極は、図示を省略する。第2実施形態の太陽電池では、第1実施形態の太陽電池の構成部と同一構成部には同一参照番号を付して説明を省略する。第2実施形態の太陽電池では、第1実施形態の太陽電池と共通の作用効果および変形例については説明を省略し、第1実施形態の太陽電池と異なる構成、作用効果および変形例についてのみ説明を行う。
図8は、第3実施形態の太陽電池310の主要部における模式断面図である。図8では、透明導電層及び集電極は、図示を省略する。第3実施形態の太陽電池310では、第2実施形態の太陽電池210の構成部と同一構成部には同一参照番号を付して説明を省略する。第3実施形態の太陽電池310では、第1および第2実施形態の太陽電池10,210と共通の作用効果および変形例については説明を省略する。第3実施形態の太陽電池310では、第1および第2実施形態10,210の太陽電池と異なる構成、作用効果および変形例についてのみ説明を行う。
図10は、第4実施形態の太陽電池510の模式断面図である。第4実施形態の太陽電池510では、第1実施形態の太陽電池10と共通の作用効果および変形例については説明を省略し、第1実施形態の太陽電池10と異なる構成、作用効果および変形例についてのみ説明を行う。
上述の各実施形態においては、イオン注入法、熱拡散法、プラズマドープ法またはエピタキシャル成長法等によって高ドープ領域を形成したが、熱拡散法の一例として、所定導電型の高ドープ領域は、結晶性シリコン基板の表面に該所定導電型ドーパントを含む溶液を接触させる工程の後に、当該結晶性シリコン基板の熱処理工程を行うことによって、該所定導電型ドーパントを結晶性シリコン基板に拡散させる方法によって形成してもよい。また、前記溶液として所定導電型ドーパントを含み且つシリコンを酸化させる溶液を準備し、当該結晶性シリコン基板にこの溶液を接触させて結晶性シリコン基板の表面に該所定導電型ドーパントを含むシリコン酸化層を形成し、その後、熱処理工程によって、当該シリコン酸化層から結晶性シリコン基板の表面へと所定導電型ドーパントを拡散させる方法で形成してもよい。例えば、n型の高ドープ領域は、P、As、Sb等のn型ドーパントを含む溶液を用いて形成してよく、特に好ましいn型ドーパントであるPを用いる場合について、第3実施形態の変形例を挙げて詳しく説明する。
Claims (13)
- 第1導電型のシリコン基板と、
前記シリコン基板の第1主面側に位置する第2導電型の非晶質シリコン層と、
を備え、
前記シリコン基板は、前記第1導電型にドーピングされた低ドープ領域と、前記低ドープ領域と前記非晶質シリコン層との間に設けられ、前記低ドープ領域よりも高い前記第1導電型のドーパント濃度を有する第1主面側高ドープ領域とを有する、太陽電池。 - 請求項1に記載の太陽電池において、
前記シリコン基板の第2主面側に位置する前記第1導電型の非晶質シリコン層を備え、
前記シリコン基板は、前記低ドープ領域と前記第1導電型の非晶質シリコン層との間に設けられ、前記低ドープ領域よりも高い前記第1導電型のドーパント濃度を有する第2主面側高ドープ領域を有する、太陽電池。 - 請求項1または2に記載の太陽電池において、
前記シリコン基板は、前記シリコン基板の厚さ方向に延在する側面を覆うように設けられ、前記低ドープ領域よりも高い前記第1導電型のドーパント濃度を有する側方高ドープ領域を有する、太陽電池。 - 請求項1乃至3のいずれか一つに記載の太陽電池において、
前記第1主面側高ドープ領域が、前記シリコン基板の厚さ方向に略直交する方向の両端部に設けられる、太陽電池。 - 請求項1乃至4のいずれか一つに記載の太陽電池において、
前記第1主面側高ドープ領域における表面ドーパント濃度が、1×1018cm-3以上である、太陽電池。 - 請求項1乃至5のいずれか一つに記載の太陽電池において、
前記低ドープ領域は、n型結晶性シリコンからなり、
前記第1主面側高ドープ領域は、前記低ドープ領域よりも多くのn型ドーパントがドーピングされたn+領域である、太陽電池。 - 請求項1乃至6のいずれか一つに記載の太陽電池において、
前記シリコン基板の前記第1主面は、非光入射面である、太陽電池。 - 請求項1に記載の太陽電池において、
前記シリコン基板の前記第1主面側に、前記第2導電型の非晶質シリコンに前記シリコン基板の厚さ方向に略直交する方向に隣り合う第1導電型の非晶質シリコン層を更に備える、太陽電池。 - 直列接続された請求項1乃至8のいずれか1つに記載の太陽電池を複数備える、太陽電池モジュール。
- 請求項9に記載の太陽電池モジュールにおいて、
前記複数の太陽電池に含まれる直列接続された2以上の前記太陽電池に並列接続されたバイパスダイオードを備える、太陽電池モジュール。 - n型ドーパントを含む酸性水溶液にn型結晶性シリコン基板を浸漬して、当該基板の表面にn型ドーパントを含むシリコン酸化層を形成する工程と、
前記n型結晶性シリコン基板を熱処理して、前記シリコン酸化層から前記n型結晶性シリコン基板の内部に前記n型ドーパントを拡散させ、少なくとも前記n型結晶性シリコン基板の前記シリコン酸化層との界面に他の領域よりも前記n型ドーパントの濃度が高いn+領域を形成する工程と、
前記シリコン酸化層を除去して前記n型結晶性シリコン基板の前記n+領域を露出させる工程と、
前記シリコン酸化層が除去された前記n型結晶性シリコン基板の第1主面側にp型非晶質シリコン層を形成する工程と、
を備える、太陽電池の製造方法。 - 請求項11に記載の太陽電池の製造方法において、
前記シリコン酸化層が除去された前記n型結晶性シリコン基板の第2主面側n型非晶質シリコン層を形成する工程を備える、太陽電池の製造方法。 - 請求項11または12に記載の太陽電池の製造方法において、
前記酸性水溶液には、リン酸および硝酸が含まれる、太陽電池の製造方法。
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