WO2017161609A1 - 双面显示器及其tft阵列基板、阵列基板制作方法 - Google Patents

双面显示器及其tft阵列基板、阵列基板制作方法 Download PDF

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WO2017161609A1
WO2017161609A1 PCT/CN2016/079132 CN2016079132W WO2017161609A1 WO 2017161609 A1 WO2017161609 A1 WO 2017161609A1 CN 2016079132 W CN2016079132 W CN 2016079132W WO 2017161609 A1 WO2017161609 A1 WO 2017161609A1
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layer
reflective
disposed
drain
reflective layer
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French (fr)
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樊勇
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials

Definitions

  • the present invention relates to the technical field of double-sided displays, and in particular to a double-sided display, a TFT array substrate thereof, and a method of fabricating an array substrate.
  • FIG. 1 is a schematic diagram showing the structure of a commonly used double-sided liquid crystal display in the prior art.
  • Embodiments of the present invention provide a double-sided display, a TFT array substrate thereof, and an array substrate manufacturing method, to solve the technical problem of high energy consumption, complicated structure, and bulky size of the double-sided display in the prior art.
  • an embodiment of the present invention provides a TFT array substrate having a double-sided display function, and the TFT array substrate includes:
  • first reflective layer disposed on the substrate, wherein the first reflective layer has a hollow structure to form a reflective region and a transmissive region;
  • a gate disposed on the transition dielectric layer and a dielectric layer disposed on the gate
  • a light emitting layer a source, and a drain disposed on the dielectric layer, wherein the source and the drain are respectively in contact with the light emitting layer;
  • An insulating layer disposed on the light emitting layer, the source, and the drain;
  • a second reflective layer disposed on the insulating layer, the second reflective layer also having a hollow structure, and forming spaced apart reflective regions and transmissive regions, wherein the first reflective layer forms a transmissive region and the The reflective region formed by the second reflective layer is correspondingly disposed, and the reflective incident region formed by the first reflective layer is disposed corresponding to the transmissive region formed by the second reflective layer, and each of the transmissive region and the reflective region respectively corresponds to one pixel unit;
  • a sealing layer disposed on an outer surface of the second reflective layer.
  • the gate is made of a graphene oxide material.
  • the light emitting layer, the source, and the drain are both made of a reduced graphene oxide material.
  • the reduced graphene oxide used to form the source and the drain has an oxygen content less than the oxygen content of the reduced graphene oxide used to form the emissive layer.
  • the present invention also provides a method for fabricating a TFT array substrate having a double-sided display function, the method comprising:
  • the reflective region formed by the second reflective layer is correspondingly disposed, and the reflective incident region formed by the first reflective layer is disposed corresponding to the transmissive region formed by the second reflective layer, and each of the transmissive region and the reflective region respectively corresponds to one pixel unit;
  • a sealing layer is formed on an outer surface of the second reflective layer.
  • the gate is made of a graphene oxide material.
  • the light emitting layer, the source, and the drain are both made of a reduced graphene oxide material.
  • the reduced graphene oxide used to form the source and the drain has an oxygen content less than the oxygen content of the reduced graphene oxide used to form the emissive layer.
  • the present invention further provides a double-sided display comprising the TFT array substrate according to any of the above embodiments.
  • the double-sided display and the TFT array substrate and the array substrate manufacturing method provided by the invention can make the structure of the double-sided display simpler by providing the first and second reflective layers on both sides of the light-emitting layer. At the same time, the volume is greatly reduced, which is beneficial to the thinning and thinning of the double-sided display.
  • the use of graphene oxide as the light-emitting layer and the electrode layer material improves the driving display rate of the pixel, and can improve the resolution of the screen and the sawtooth phenomenon at the edge of the text picture.
  • using graphene oxide as the light-emitting layer and the electrode layer material it is also possible to manufacture a flexible double-sided display depending on the substrate.
  • FIG. 1 is a schematic diagram showing the structure of a commonly used double-sided liquid crystal display in the prior art
  • FIG. 2 is a schematic structural view of a preferred embodiment of a TFT array substrate having a double-sided display function according to the present invention
  • 3 is a single-sided display effect diagram of a conventional pixel design
  • Figure 5 is a single-sided display effect diagram of the display using the graphene oxide material of the present invention.
  • Figure 6 is a double-sided display effect diagram of the display using the graphene oxide material of the present invention.
  • FIG. 7 is a schematic flow chart of a preferred embodiment of a method for fabricating a TFT array substrate having a double-sided display function according to the present invention.
  • FIG. 8 is a schematic view showing formation of a first reflective layer in the method of fabricating the TFT array substrate of the embodiment of FIG. 7;
  • FIG. 9 is a schematic view showing formation of a gate electrode and a dielectric layer in the method of fabricating the TFT array substrate of the embodiment of FIG. 7;
  • FIG. 10 is a schematic view showing formation of a light-emitting layer, a source, and a drain in the method of fabricating the TFT array substrate of the embodiment of FIG. 7;
  • FIG. 11 is a schematic view showing formation of a second reflective layer in the method of fabricating the TFT array substrate of the embodiment of FIG. 7;
  • Figure 12 is a schematic block diagram showing a preferred embodiment of a double-sided display of the present invention.
  • FIG. 2 is a schematic structural diagram of a preferred embodiment of a TFT array substrate having a double-sided display function according to the present invention.
  • the TFT array substrate includes, but is not limited to, the following structural units: a substrate 100, a first reflective layer 200, and a transition medium.
  • the first reflective layer 200 is disposed on the substrate 100.
  • the material of the substrate 100 may be glass, metal, or PET (polyethylene terephthalate, polyethylene). Terephthalate (referred to as PET) and other materials with high hardness and high dimensional stability, of course, can also be soft materials, and thus can be made into a flexible screen.
  • the first reflective layer 200 is a metal thin film, and the first reflective layer 200 has a hollow structure to form the reflective region 210 and the transmissive region 220 which are disposed at intervals. The purpose is to make a part of the pixel light be reflected, and a part of the pixel light can pass through the first reflective layer 200.
  • the reflective area 210 reflects the light to the other side, and the opposite side can be displayed, and the display is performed. The effect of double-sided display.
  • the transition dielectric layer 300 is disposed on the first reflective layer 200.
  • the material of the transition dielectric layer 300 may be SiO 2 , SiN x , or PI (polyimide) or the like.
  • the purpose is to form a flat layer of insulating oxygen barrier.
  • a gate 400 is disposed on the transition dielectric layer 300, and the material of the gate 400 is preferably graphene oxide (Graphene) Oxide (GO), another function of the transition dielectric layer 300 is to make the graphene oxide adsorb well, and the GO of the gate 400 can be prepared by an improved hummers method (a method for preparing graphene by a redox method), that is, Complete graphene oxide is prepared by partially oxidizing graphene.
  • the gate 400 can first be printed by inkjet, Roll To roll, spin coating to form a coating, and then the coating layer is formed by ion etching or laser etching or the like to form the gate structure 410.
  • the gate 400 is covered with a dielectric layer 500, which may be made of SiO2, SiNx or the like.
  • the light emitting layer 600, the source 700, and the drain 800 are disposed on the dielectric layer 500, wherein the source 700 and the drain 800 are in contact with the light emitting layer 600, respectively.
  • the luminescent layer 600, the source 700, and the drain 800 are all made of a reduced graphene oxide material, that is, the graphene material used in the luminescent layer 600, the source 700, and the drain 800 has a lower oxygen content than the gate 400.
  • the oxygen content of the material graphene oxide is not limited to the material graphene oxide.
  • the light-emitting layer 600, the source 700, and the drain 800 are all used to reduce graphene oxide (reduced Graphene Oxide, abbreviated as rGO) material, but the oxygen content thereof is also different.
  • the reduced graphene oxide used in the source 700 and the drain 800 has a lower oxygen content than the reduced graphene oxide used in the light-emitting layer 600. Oxygen content.
  • the light-emitting wavelength of the light-emitting layer 600 can be continuously adjusted by the voltage of the gate 400.
  • the light-emitting layer 600 is formed in the same manner as the GO layer of the gate 400.
  • the source 700 and the drain 800 are also the same as the gate 400. How to make it. Within the understanding of those skilled in the art, no further details are provided herein.
  • an insulating layer 900 is further provided on the light-emitting layer 600, the source 700, and the drain 800.
  • the insulating layer 900 is required to have a good oxygen barrier and thermal conductivity, and can provide a good heat dissipation path of the device.
  • the second reflective layer 1000 is disposed on the insulating layer 900.
  • the second reflective layer 1000 is also a metal thin film.
  • the second reflective layer 1000 also has a hollow structure, and the reflective regions 1010 and the transmissive regions 1020 are formed at intervals. The purpose is to make a part of the pixel light be reflected, and a part of the pixel light can pass through the second reflective layer 1000.
  • the reflective area 1010 reflects the light to the other side, and the opposite side display can be realized, and the display is performed. The effect of double-sided display.
  • the transmissive region 220 formed by the first reflective layer 200 is disposed corresponding to the reflective region 1010 formed by the second reflective layer 1000, and the reflective incident region 210 formed by the first reflective layer 200 corresponds to the transmissive region 1020 formed by the second reflective layer 1000.
  • the transmissive region 220 formed by the first reflective layer 200 is disposed corresponding to the reflective region 1010 formed by the second reflective layer 1000, and the reflective incident region 210 formed by the first reflective layer 200 corresponds to the transmissive region 1020 formed by the second reflective layer 1000.
  • Each of the transmissive regions (220, 1020) and the reflective regions (210, 1010) respectively correspond to one pixel unit, that is, corresponding to three sets of electrode structures (including the gate 400, the light emitting layer 600, the source 700, and the drain 800).
  • the pixel electrode is preferably driven by the field color sequence, and the graphene oxide has the characteristics of fast response, which can improve the resolution of the picture and the sawtooth phenomenon at the edge of the text picture.
  • the display effect is significantly improved compared to the sub-pixel condition of the conventional pixel design. Please refer to FIG. 3 to FIG. 6 together.
  • FIG. 3 is a single-sided display effect diagram of a conventional pixel design, in which a black portion represents an opposite pixel; FIG.
  • FIG. 4 is a double-sided display effect diagram in the case of a conventional pixel design
  • FIG. 5 is a view of the present invention
  • FIG. 6 is a double-sided display effect diagram of a display using a graphene oxide material according to the present invention. It is obvious that the display effect of the display of the present invention is adopted (especially the resolution of the screen and The sawtooth phenomenon at the edge of the text picture has been significantly improved.
  • the outer surface of the second reflective layer 1000 is further provided with a sealing layer 1100.
  • the material of the sealing layer 1100 is preferably SiNx, which functions as a water-proof and oxygen barrier for the device.
  • the double-sided display TFT array substrate provided by the present invention can make the structure of the double-sided display simpler and the volume is greatly reduced by providing the first and second reflective layers on both sides of the light-emitting layer.
  • the driving display rate of the pixel is improved, the resolution of the picture and the saw-tooth phenomenon at the edge of the text picture can be improved, and graphene oxide is used as the material
  • the light-emitting layer and the electrode layer material can also make a flexible double-sided display possible depending on the substrate.
  • FIG. 7 is a flow chart of a preferred embodiment of the method for fabricating a TFT array substrate having a double-sided display function according to the present invention. Schematic, the method includes but is not limited to the following steps.
  • Step S700 forming a first reflective layer on the substrate, and etching the first reflective layer out of the hollow structure to form a reflective region and a transmissive region disposed at intervals.
  • the material of the substrate 100 may be glass, metal, PET (polyethylene terephthalate, polyethylene) Terephthalate (referred to as PET) and other materials with high hardness and high dimensional stability, of course, can also be soft materials, and thus can be made into a flexible screen.
  • PET polyethylene terephthalate, polyethylene
  • other materials with high hardness and high dimensional stability can also be soft materials, and thus can be made into a flexible screen.
  • the first reflective layer 200 is a metal thin film, and the metal thin film is coated or sprayed onto the substrate 100, and then a hollow structure is processed on the metal thin film by etching, micro-engraving or the like to form the reflective regions 210 and the spaced regions. Transmission zone 220.
  • the purpose is to make a part of the pixel light be reflected, and a part of the pixel light can pass through the first reflective layer 200.
  • the reflective area 210 reflects the light to the other side, and the opposite side can be displayed, and the display is performed. The effect of double-sided display.
  • FIG. 8 is a schematic diagram of forming a first reflective layer in the method for fabricating the TFT array substrate of the embodiment of FIG.
  • Step S710 the transition medium layer is covered on the first reflective layer.
  • the material of the transition medium layer may be SiO 2 , SiN x , or PI (polyimide) or the like.
  • the purpose is to form a flat layer of insulating oxygen barrier.
  • step S720 a gate is disposed on the transition dielectric layer and a dielectric layer is disposed on the gate.
  • the material of the gate 400 is preferably graphene oxide (Graphene) Oxide (GO), another function of the transition dielectric layer 300 is to make the graphene oxide adsorb well, and the GO of the gate 400 can be prepared by an improved hummers method (a method for preparing graphene by a redox method), that is, Complete graphene oxide is prepared by partially oxidizing graphene.
  • the gate 400 can first be printed by inkjet, Roll To A roll (roll-to-roll process), spin coating is used to form a coating, and then the coating layer is formed into a gate structure 410 by ion etching or laser etching or the like.
  • a dielectric layer over the gate 400 may be made of SiO2, SiNx or the like. Please refer to FIG. 9.
  • FIG. 9 is a schematic diagram showing the formation of a gate and a dielectric layer in the method for fabricating the TFT array substrate of the embodiment of FIG.
  • Step S730 forming a light-emitting layer, a source, and a drain on the dielectric layer, wherein the source and the drain are respectively in contact with the light-emitting layer.
  • the light emitting layer 600, the source 700, and the drain 800 are disposed on the dielectric layer 500, wherein the source 700 and the drain 800 are in contact with the light emitting layer 600, respectively.
  • the luminescent layer 600, the source 700, and the drain 800 are all made of a reduced graphene oxide material, that is, the graphene material used in the luminescent layer 600, the source 700, and the drain 800 has a lower oxygen content than the gate 400. The oxygen content of the material graphene oxide.
  • the light-emitting layer 600, the source 700, and the drain 800 are all used to reduce graphene oxide (reduced Graphene Oxide, abbreviated as rGO) material, but the oxygen content thereof is also different.
  • the reduced graphene oxide used in the source 700 and the drain 800 has a lower oxygen content than the reduced graphene oxide used in the light-emitting layer 600. Oxygen content.
  • the light-emitting wavelength of the light-emitting layer 600 can be continuously adjusted by the voltage of the gate 400.
  • the light-emitting layer 600 is formed in the same manner as the GO layer of the gate 400.
  • the source 700 and the drain 800 are also the same as the gate 400. How to make it.
  • FIG. 10 is a schematic diagram showing the formation of a light-emitting layer, a source and a drain in the method for fabricating the TFT array substrate of the embodiment of FIG.
  • step S740 an insulating layer is disposed on the light emitting layer, the source, and the drain.
  • the insulating layer 900 (refer to the description in FIG. 11) needs to have the characteristics of good oxygen barrier, good thermal conductivity, and good heat dissipation path of the device.
  • Step S750 forming a second reflective layer on the insulating layer, and etching the second reflective layer out of the hollow structure to form a reflective region and a transmissive region.
  • the second reflective layer 1000 is also preferably a metal thin film, and the second reflective layer 1000 is also in a hollow structure, forming a reflective region 1010 and a transmissive region 1020.
  • the purpose is to make a part of the pixel light be reflected, and a part of the pixel light can pass through the second reflective layer 1000.
  • the reflective area 1010 reflects the light to the other side, and the opposite side display can be realized, and the display is performed. The effect of double-sided display.
  • the second reflective layer 1000 is fabricated in the same manner as the first reflective layer 200.
  • the transmissive region 220 formed by the first reflective layer 200 is disposed corresponding to the reflective region 1010 formed by the second reflective layer 1000, and the reflective incident region 210 formed by the first reflective layer 200 corresponds to the transmissive region 1020 formed by the second reflective layer 1000.
  • FIG. 11 is a schematic diagram showing the formation of a second reflective layer in the method for fabricating the TFT array substrate of the embodiment of FIG.
  • Each of the transmissive regions (220, 1020) and the reflective regions (210, 1010) respectively correspond to one pixel unit, that is, corresponding to three sets of electrode structures (including the gate 400, the light emitting layer 600, the source 700, and the drain 800).
  • the pixel electrode is preferably driven by the field color sequence, and the graphene oxide has the characteristics of fast response, which can improve the resolution of the picture and the sawtooth phenomenon at the edge of the text picture.
  • the display effect is significantly improved compared to the sub-pixel condition of the conventional pixel design. Please refer to FIG. 3 to FIG. 6 together.
  • FIG. 3 is a single-sided display effect diagram of a conventional pixel design, in which a black portion represents an opposite pixel; FIG.
  • FIG. 4 is a double-sided display effect diagram in the case of a conventional pixel design
  • FIG. 5 is a view of the present invention
  • FIG. 6 is a double-sided display effect diagram of a display using a graphene oxide material according to the present invention. It is obvious that the display effect of the display of the present invention is adopted (especially the resolution of the screen and The sawtooth phenomenon at the edge of the text picture has been significantly improved.
  • Step S760 forming a sealing layer on the outer surface of the second reflective layer.
  • the material of the sealing layer 1100 is preferably SiNx, which functions as a water-proof and oxygen barrier for the device.
  • the method for fabricating the double-sided display TFT array substrate provided by the present invention can make the structure of the double-sided display simpler and the volume is greatly reduced by separately providing the first and second reflective layers on both sides of the light-emitting layer.
  • it is beneficial to the thin and light of the double-sided display in addition, the use of graphene oxide as the light-emitting layer and the electrode layer material improves the driving display rate of the pixel, can improve the resolution of the picture and the saw-tooth phenomenon at the edge of the text picture, and simultaneously oxidizes
  • graphene can also make a flexible double-sided display possible depending on the substrate.
  • FIG. 12 is a schematic structural diagram of a preferred embodiment of the double-sided display of the present invention.
  • the double-sided display includes a housing 8 and a TFT array substrate described in the above embodiment provided inside the housing 8.
  • TFT array substrate please refer to the detailed description in the above embodiments, and other structural features of the double-sided display are within the scope of those skilled in the art, and are not described herein again.

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Abstract

一种具有双面显示功能的TFT阵列基板、其制造方法以及具有该TFT阵列基板的双面显示器。该TFT阵列基板包括：基板(100)；设于基板(100)上的第一反射层(200)，其中，第一反射层(200)呈镂空结构，以形成间隔设置的反射区(210)和透射区(220)；覆盖在第一反射层(200)上的过渡介质层(300)；设于过渡介质层(300)上的栅极(400)以及盖设于栅极(400)上的介电层(500)；设于介电层(500)上的发光层(600)、源极(700)以及漏极(800)；设于发光层(600)、源极(700)以及漏极(800)上的绝缘层(900)；设于绝缘层(900)上的第二反射层(1000)，第二反射层(1000)也呈镂空结构，并形成间隔设置的反射区(1010)和透射区(1020)；设于第二反射层(1000)外表面的密封层(1100)。该TFT阵列基板可以解决现有技术中双面显示器能耗较高以及结构复杂、体积笨重的技术问题。

Description

双面显示器及其TFT阵列基板、阵列基板制作方法
【技术领域】
本发明涉及双面显示器的技术领域，具体是涉及一种双面显示器及其TFT阵列基板、阵列基板制作方法。
【背景技术】
在传统的双面液晶显示中，由于采用透射式液晶面板，需应用到两片液晶显示屏以及相应的背光源，所以厚度较厚且功耗很高，尤其是在明亮的户外进行显示时，显示屏需要较高的亮度才能看清楚，因此就需要显示器背光具有很高的亮度，这样会导致显示器功耗很高，不利于节能减排。如图1所示，图1是现有技术中一种常用的双面液晶显示器结构示意简图。
【发明内容】
本发明实施例提供一种双面显示器及其TFT阵列基板、阵列基板制作方法，以解决现有技术中双面显示器能耗较高以及结构复杂、体积笨重的技术问题。
为解决上述问题，本发明实施例提供了一种具有双面显示功能的TFT阵列基板，所述TFT阵列基板包括：
基板；
设于所述基板上的第一反射层，其中，所述第一反射层呈镂空结构，以形成间隔设置的反射区和透射区；
覆盖在所述第一反射层上的过渡介质层；
设于所述过渡介质层上的栅极以及盖设于所述栅极上的介电层；
设于所述介电层上的发光层、源极以及漏极，其中，所述源极和所述漏极分别与所述发光层相接触；
设于所述发光层、所述源极以及所述漏极上的绝缘层；
设于所述绝缘层上的第二反射层，所述第二反射层也呈镂空结构，并形成间隔设置的反射区和透射区，其中，所述第一反射层形成的透射区与所述第二反射层形成的反射区对应设置，所述第一反射层形成的反射射区与所述第二反射层形成的透射区对应设置，每一透射区和反射区分别对应一个像素单元；
设于所述第二反射层外表面的密封层。
根据本发明一优选实施例，所述栅极采用氧化石墨烯材料制成。
根据本发明一优选实施例，所述发光层、所述源极以及所述漏极均采用还原氧化石墨烯材料制成。
根据本发明一优选实施例，制成所述源极和所述漏极采用的还原氧化石墨烯的含氧量小于制成所述发光层采用的还原氧化石墨烯的含氧量。
为解决上述技术问题，本发明还提供一种具有双面显示功能TFT阵列基板的制作方法，所述方法包括：
在基板上形成第一反射层，并将所述第一反射层蚀刻出镂空结构，以形成间隔设置的反射区和透射区；
在所述第一反射层上盖设过渡介质层；
在所述过渡介质层上设置栅极并在所述栅极上设置介电层；
在所述介电层上形成发光层、源极以及漏极，其中，所述源极和所述漏极分别与所述发光层相接触；
在所述发光层、所述源极以及所述漏极上设置绝缘层；
在所述绝缘层上形成第二反射层，并将所述第二反射层蚀刻出镂空结构，以形成间隔设置的反射区和透射区，其中，所述第一反射层形成的透射区与所述第二反射层形成的反射区对应设置，所述第一反射层形成的反射射区与所述第二反射层形成的透射区对应设置，每一透射区和反射区分别对应一个像素单元；
在所述第二反射层外表面形成密封层。
根据本发明一优选实施例，所述栅极采用氧化石墨烯材料制成。
根据本发明一优选实施例，所述发光层、所述源极以及所述漏极均采用还原氧化石墨烯材料制成。
根据本发明一优选实施例，制成所述源极和所述漏极采用的还原氧化石墨烯的含氧量小于制成所述发光层采用的还原氧化石墨烯的含氧量。
为解决上述技术问题，本发明进一步提供一种双面显示器，所述双面显示器包括上述实施例中任一项所述的TFT阵列基板。
相对于现有技术，本发明提供的双面显示器及其TFT阵列基板、阵列基板制作方法，通过在发光层两侧分别设置第一、第二反光层，可使双面显示器的结构更加简单，同时体积大大减小，有利于双面显示器的轻薄化；另外，利用氧化石墨烯作为发光层以及电极层材料，提高了像素的驱动显示速率，可以改善画面的分辨率和文字图画边缘的锯齿现象，同时采用氧化石墨烯作为发光层以及电极层材料，还可以根据基板的不同，使制作柔性双面显示器成为可能。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是现有技术中一种常用的双面液晶显示器结构示意简图；
图2是本发明具有双面显示功能的TFT阵列基板一优选实施例的结构示意图；
图3是传统像素设计单面显示效果图；
图4是传统像素设计情况下双面显示效果图；
图5是本发明采用氧化石墨烯材料显示器的单面显示效果图；
图6是本发明采用氧化石墨烯材料显示器的双面显示效果图；
图7是本发明具有双面显示功能TFT阵列基板的制作方法一优选实施例的流程示意图；
图8是图7实施例TFT阵列基板的制作方法中形成第一反射层的示意图；
图9是图7实施例TFT阵列基板的制作方法中形成栅极以及介电层的示意图；
图10是图7实施例TFT阵列基板的制作方法中形成发光层、源极以及漏极的示意图；
图11是图7实施例TFT阵列基板的制作方法中形成第二反射层的示意图；以及
图12是本发明双面显示器一优选实施例的结构示意简图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
请参阅图2，图2是本发明具有双面显示功能的TFT阵列基板一优选实施例的结构示意图，该TFT阵列基板包括但不限于以下结构单元：基板100、第一反射层200、过渡介质层300、栅极400、介电层500、发光层600、源极700、漏极800、绝缘层900、第二反射层1000以及密封层1100。
具体而言，第一反射层200设于基板100上，其中，基板100的材质可以为玻璃、金属、PET（聚对苯二甲酸乙二酯，polyethylene terephthalate，简称PET）等硬度较大、尺寸稳定性高的材料，当然还可以为软质材料，进而可以制作柔性屏。优选地，该第一反射层200为金属薄膜，第一反射层200呈镂空结构，以形成间隔设置的反射区210和透射区220。其目的是使一部分像素光被反射，一部分像素光可以透过第一反射层200，在保证一面显示的情况下，反射区210将光反射到另一面，可以实现对侧的显示，而呈现出双面显示的效果。
过渡介质层300盖设于第一反射层200上，其中，过渡介质层300的材料可以是SiO2、SiNx、或PI（聚酰亚胺）等。其目的是形成一层绝缘隔氧的平坦层。在该过渡介质层300上设置栅极400，该栅极400的材料优选为氧化石墨烯（Graphene oxide，简称GO），过渡介质层300的另一个作用是可以使氧化石墨烯很好的吸附，栅极400的GO可以采用改进的hummers法（氧化还原法制备石墨烯的方法）制备得到，即通过部分氧化的石墨烯制备出完全氧化石墨烯。而栅极400先可以通过喷墨印刷、Roll to Roll、旋转涂覆的方式制作涂层，然后将涂层层以离子蚀刻或激光蚀刻等形成栅极结构410。
栅极400上覆盖一层介电层500，其材料可以是SiO2、SiNx等。发光层600、源极700以及漏极800设于介电层500上，其中，源极700和漏极800分别与发光层600相接触。优选地，发光层600、源极700以及漏极800均采用还原氧化石墨烯材料制成，即发光层600、源极700以及漏极800采用的石墨烯材料的含氧量小于栅极400采用材料氧化石墨烯的含氧量。
进一步地，虽然，发光层600、源极700以及漏极800均采用的还原氧化石墨烯（reduced Graphene Oxide，简称rGO）材料制成，但其含氧量也不相同，优选为，源极700和漏极800采用的还原氧化石墨烯的含氧量小于制成发光层600采用的还原氧化石墨烯的含氧量。该发光层600的发光波长可以通过栅极400电压进行连续调节，该发光层600的制作方式和栅极400的GO层相同，同样的，源极700和漏极800也采用与栅极400相同的制作方式。在本领域技术人员的理解范围内，此处不再赘述。
另外，在发光层600、源极700以及漏极800上还设有绝缘层900，该绝缘层900需要具备隔氧、导热性好并能够提供器件良好的散热通道的特点。
绝缘层900上设有第二反射层1000，第二反射层1000也为金属薄膜，第二反射层1000同样呈镂空结构，形成间隔设置的反射区1010和透射区1020。其目的是使一部分像素光被反射，一部分像素光可以透过第二反射层1000，在保证一面显示的情况下，反射区1010将光反射到另一面，可以实现对侧的显示，而呈现出双面显示的效果。
优选地，第一反射层200形成的透射区220与第二反射层1000形成的反射区1010对应设置，第一反射层200形成的反射射区210与第二反射层1000形成的透射区1020对应设置。
每一透射区（220、1020）和反射区（210、1010）分别对应一个像素单元，也即对应三组电极结构（包括栅极400、发光层600、源极700以及漏极800）。其中，像素电极优选通过场色序的驱动方式，再加上氧化石墨烯具有响应速度快的特点，可以很好的改善画面的分辨率和文字图画边缘的锯齿现象。与传统像素设计的等子像素状况相比，显示效果明显改善。请一并参阅图3-图6，图3是传统像素设计单面显示效果图，其中，黑色部分表示对面像素；图4是传统像素设计情况下双面显示效果图，图5是本发明采用氧化石墨烯材料显示器的单面显示效果图，图6是本发明采用氧化石墨烯材料显示器的双面显示效果图，很明显，采用本发明技术方案的显示器显示效果（尤其是画面的分辨率和文字图画边缘的锯齿现象）有明显改善。
进一步地，第二反射层1000的外表面还设有密封层1100，该密封层1100的材质优选为SiNx，起到对器件的隔水隔氧保护作用。
相对于现有技术，本发明提供的双面显示器TFT阵列基板，通过在发光层两侧分别设置第一、第二反光层，可使双面显示器的结构更加简单，同时体积大大减小，有利于双面显示器的轻薄化；另外，利用氧化石墨烯作为发光层以及电极层材料，提高了像素的驱动显示速率，可以改善画面的分辨率和文字图画边缘的锯齿现象，同时采用氧化石墨烯作为发光层以及电极层材料，还可以根据基板的不同，使制作柔性双面显示器成为可能。
进一步地，本发明实施例还提供一种具有双面显示功能TFT阵列基板的制作方法，请参阅图7，图7是本发明具有双面显示功能TFT阵列基板的制作方法一优选实施例的流程示意图，该方法包括但不限于以下步骤。
步骤S700，在基板上形成第一反射层，并将第一反射层蚀刻出镂空结构，以形成间隔设置的反射区和透射区。
在步骤S700中，基板100的材质可以为玻璃、金属、PET（聚对苯二甲酸乙二酯，polyethylene terephthalate，简称PET）等硬度较大、尺寸稳定性高的材料，当然还可以为软质材料，进而可以制作柔性屏。
优选地，该第一反射层200为金属薄膜，将金属薄膜涂布或者喷射与基板100上，然后通过蚀刻、微雕等工艺在金属薄膜上加工出镂空结构，以形成间隔设置的反射区210和透射区220。其目的是使一部分像素光被反射，一部分像素光可以透过第一反射层200，在保证一面显示的情况下，反射区210将光反射到另一面，可以实现对侧的显示，而呈现出双面显示的效果。请参阅图8，图8是图7实施例TFT阵列基板的制作方法中形成第一反射层的示意图。
步骤S710，在第一反射层上盖设过渡介质层。
其中，过渡介质层的材料可以是SiO2、SiNx、或PI（聚酰亚胺）等。其目的是形成一层绝缘隔氧的平坦层。
步骤S720，在过渡介质层上设置栅极并在栅极上设置介电层。
该栅极400的材料优选为氧化石墨烯（Graphene oxide，简称GO），过渡介质层300的另一个作用是可以使氧化石墨烯很好的吸附，栅极400的GO可以采用改进的hummers法（氧化还原法制备石墨烯的方法）制备得到，即通过部分氧化的石墨烯制备出完全氧化石墨烯。而栅极400先可以通过喷墨印刷、Roll to Roll（卷对卷制程）、旋转涂覆的方式制作涂层，然后将涂层层以离子蚀刻或激光蚀刻等形成栅极结构410。栅极400上覆盖的介电层（请参阅图10中标号），其材料可以是SiO2、SiNx等。请参阅图9，图9是图7实施例TFT阵列基板的制作方法中形成栅极以及介电层的示意图。
步骤S730，在介电层上形成发光层、源极以及漏极，其中，源极和漏极分别与发光层相接触。
在步骤S730中，发光层600、源极700以及漏极800设于介电层500上，其中，源极700和漏极800分别与发光层600相接触。优选地，发光层600、源极700以及漏极800均采用还原氧化石墨烯材料制成，即发光层600、源极700以及漏极800采用的石墨烯材料的含氧量小于栅极400采用材料氧化石墨烯的含氧量。
进一步地，虽然，发光层600、源极700以及漏极800均采用的还原氧化石墨烯（reduced Graphene Oxide，简称rGO）材料制成，但其含氧量也不相同，优选为，源极700和漏极800采用的还原氧化石墨烯的含氧量小于制成发光层600采用的还原氧化石墨烯的含氧量。该发光层600的发光波长可以通过栅极400电压进行连续调节，该发光层600的制作方式和栅极400的GO层相同，同样的，源极700和漏极800也采用与栅极400相同的制作方式。在本领域技术人员的理解范围内，此处不再赘述。请参阅图10，图10是图7实施例TFT阵列基板的制作方法中形成发光层、源极以及漏极的示意图。
步骤S740，在发光层、源极以及漏极上设置绝缘层。
在该步骤中，绝缘层900（请参阅图11中标注）需要具备隔氧、导热性好并能够提供器件良好的散热通道的特点。
步骤S750，在绝缘层上形成第二反射层，并将第二反射层蚀刻出镂空结构，以形成间隔设置的反射区和透射区。
第二反射层1000也优选为金属薄膜，第二反射层1000同样呈镂空结构，形成间隔设置的反射区1010和透射区1020。其目的是使一部分像素光被反射，一部分像素光可以透过第二反射层1000，在保证一面显示的情况下，反射区1010将光反射到另一面，可以实现对侧的显示，而呈现出双面显示的效果。第二反射层1000的制作方法与第一反射层200的制作方法相同。
优选地，第一反射层200形成的透射区220与第二反射层1000形成的反射区1010对应设置，第一反射层200形成的反射射区210与第二反射层1000形成的透射区1020对应设置。请参阅图11，图11是图7实施例TFT阵列基板的制作方法中形成第二反射层的示意图。
每一透射区（220、1020）和反射区（210、1010）分别对应一个像素单元，也即对应三组电极结构（包括栅极400、发光层600、源极700以及漏极800）。其中，像素电极优选通过场色序的驱动方式，再加上氧化石墨烯具有响应速度快的特点，可以很好的改善画面的分辨率和文字图画边缘的锯齿现象。与传统像素设计的等子像素状况相比，显示效果明显改善。请一并参阅图3-图6，图3是传统像素设计单面显示效果图，其中，黑色部分表示对面像素；图4是传统像素设计情况下双面显示效果图，图5是本发明采用氧化石墨烯材料显示器的单面显示效果图，图6是本发明采用氧化石墨烯材料显示器的双面显示效果图，很明显，采用本发明技术方案的显示器显示效果（尤其是画面的分辨率和文字图画边缘的锯齿现象）有明显改善。
步骤S760，在第二反射层外表面形成密封层。
在步骤S760中，请参阅图2，密封层1100的材质优选为SiNx，起到对器件的隔水隔氧保护作用。
相对于现有技术，本发明提供的双面显示器TFT阵列基板的制作方法，通过在发光层两侧分别设置第一、第二反光层，可使双面显示器的结构更加简单，同时体积大大减小，有利于双面显示器的轻薄化；另外，利用氧化石墨烯作为发光层以及电极层材料，提高了像素的驱动显示速率，可以改善画面的分辨率和文字图画边缘的锯齿现象，同时采用氧化石墨烯作为发光层以及电极层材料，还可以根据基板的不同，使制作柔性双面显示器成为可能。
另外，本发明实施例还提供一种双面显示器，请参阅图12，图12是本发明双面显示器一优选实施例的结构示意简图。其中，该双面显示器包括壳体8以及设于壳体8内部的上述实施例中所述的TFT阵列基板。关于TFT阵列基板的技术特征请参阅上述实施例中的详细描述，而双面显示器的其他部分结构技术特征，在本领域技术人员的理解范围内，此处亦不再赘述。
以上所述仅为本发明的部分实施例，并非因此限制本发明的保护范围，凡是利用本发明说明书及附图内容所作的等效装置或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (19)

  1. 一种具有双面显示功能的TFT阵列基板，其特征在于，所述TFT阵列基板包括：
    基板；
    设于所述基板上的第一反射层，其中，所述第一反射层呈镂空结构，以形成间隔设置的反射区和透射区；
    覆盖在所述第一反射层上的过渡介质层；
    设于所述过渡介质层上的栅极以及盖设于所述栅极上的介电层，其中，所述栅极采用氧化石墨烯材料制成；
    设于所述介电层上的发光层、源极以及漏极，其中，所述源极和所述漏极分别与所述发光层相接触；
    设于所述发光层、所述源极以及所述漏极上的绝缘层；
    设于所述绝缘层上的第二反射层，所述第二反射层也呈镂空结构，并形成间隔设置的反射区和透射区，其中，所述第一反射层形成的透射区与所述第二反射层形成的反射区对应设置，所述第一反射层形成的反射射区与所述第二反射层形成的透射区对应设置，每一透射区和反射区分别对应一个像素单元；
    设于所述第二反射层外表面的密封层。
  2. 根据权利要求1所述的TFT阵列基板，其特征在于，所述发光层、所述源极以及所述漏极均采用还原氧化石墨烯材料制成。
  3. 根据权利要求2所述的TFT阵列基板，其特征在于，制成所述源极和所述漏极采用的还原氧化石墨烯的含氧量小于制成所述发光层采用的还原氧化石墨烯的含氧量。
  4. 根据权利要求1所述的TFT阵列基板，其特征在于，所述过渡介质层的材料为SiO2、SiNx或聚酰亚胺。
  5. 根据权利要求1所述的TFT阵列基板，其特征在于，所述介电层的材料为SiO2或SiNx。
  6. 根据权利要求1所述的TFT阵列基板，其特征在于，所述密封层的材料为SiNx。
  7. 一种具有双面显示功能TFT阵列基板的制作方法，其特征在于，所述方法包括：
    在基板上形成第一反射层，并将所述第一反射层蚀刻出镂空结构，以形成间隔设置的反射区和透射区；
    在所述第一反射层上盖设过渡介质层；
    在所述过渡介质层上设置栅极并在所述栅极上设置介电层；
    在所述介电层上形成发光层、源极以及漏极，其中，所述源极和所述漏极分别与所述发光层相接触；
    在所述发光层、所述源极以及所述漏极上设置绝缘层；
    在所述绝缘层上形成第二反射层，并将所述第二反射层蚀刻出镂空结构，以形成间隔设置的反射区和透射区，其中，所述第一反射层形成的透射区与所述第二反射层形成的反射区对应设置，所述第一反射层形成的反射射区与所述第二反射层形成的透射区对应设置，每一透射区和反射区分别对应一个像素单元；
    在所述第二反射层外表面形成密封层。
  8. 根据权利要求7所述的制作方法，其特征在于，所述栅极采用氧化石墨烯材料制成。
  9. 根据权利要求7所述的制作方法，其特征在于，所述发光层、所述源极以及所述漏极均采用还原氧化石墨烯材料制成。
  10. 根据权利要求9所述的制作方法，其特征在于，制成所述源极和所述漏极采用的还原氧化石墨烯的含氧量小于制成所述发光层采用的还原氧化石墨烯的含氧量。
  11. 根据权利要求7所述的制作方法，其特征在于，所述过渡介质层的材料为SiO2、SiNx或聚酰亚胺。
  12. 根据权利要求7所述的制作方法，其特征在于，所述介电层的材料为SiO2或SiNx。
  13. 根据权利要求7所述的制作方法，其特征在于，所述密封层的材料为SiNx。
  14. 根据权利要求7所述的制作方法，其特征在于，所述栅极通过喷墨印刷或卷对卷或者旋转涂覆的方式制作涂层。
  15. 一种双面显示器，其特征在于，所述双面显示器包括具有双面显示功能的TFT阵列基板，所述TFT阵列基板包括：
    基板；
    设于所述基板上的第一反射层，其中，所述第一反射层呈镂空结构，以形成间隔设置的反射区和透射区；
    覆盖在所述第一反射层上的过渡介质层；
    设于所述过渡介质层上的栅极以及盖设于所述栅极上的介电层；
    设于所述介电层上的发光层、源极以及漏极，其中，所述源极和所述漏极分别与所述发光层相接触；
    设于所述发光层、所述源极以及所述漏极上的绝缘层；
    设于所述绝缘层上的第二反射层，所述第二反射层也呈镂空结构，并形成间隔设置的反射区和透射区，其中，所述第一反射层形成的透射区与所述第二反射层形成的反射区对应设置，所述第一反射层形成的反射射区与所述第二反射层形成的透射区对应设置，每一透射区和反射区分别对应一个像素单元；
    设于所述第二反射层外表面的密封层。
  16. 根据权利要求15所述的双面显示器，其特征在于，所述栅极采用氧化石墨烯材料制成。
  17. 根据权利要求15所述的双面显示器，其特征在于，所述发光层、所述源极以及所述漏极均采用还原氧化石墨烯材料制成。
  18. 根据权利要求17所述的双面显示器，其特征在于，制成所述源极和所述漏极采用的还原氧化石墨烯的含氧量小于制成所述发光层采用的还原氧化石墨烯的含氧量。
  19. 根据权利要求15所述的双面显示器，其特征在于，所述过渡介质层的材料为SiO2、SiNx或聚酰亚胺。
PCT/CN2016/079132 2016-03-22 2016-04-13 双面显示器及其tft阵列基板、阵列基板制作方法 Ceased WO2017161609A1 (zh)

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