WO2017193439A1 - 双面显示器、显示模组及其tft阵列基板 - Google Patents

双面显示器、显示模组及其tft阵列基板 Download PDF

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Publication number
WO2017193439A1
WO2017193439A1 PCT/CN2016/085463 CN2016085463W WO2017193439A1 WO 2017193439 A1 WO2017193439 A1 WO 2017193439A1 CN 2016085463 W CN2016085463 W CN 2016085463W WO 2017193439 A1 WO2017193439 A1 WO 2017193439A1
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Prior art keywords
double
disposed
drain
sided display
graphene
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PCT/CN2016/085463
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English (en)
French (fr)
Inventor
樊勇
Original Assignee
深圳市华星光电技术有限公司
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Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US15/109,642 priority Critical patent/US10090331B2/en
Publication of WO2017193439A1 publication Critical patent/WO2017193439A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system

Definitions

  • the present invention relates to the technical field of double-sided displays, and in particular to a double-sided display, a display module, and a TFT array substrate thereof.
  • FIG. 1 is a schematic diagram showing the structure of a commonly used double-sided liquid crystal display in the prior art.
  • the embodiment of the invention provides a double-sided display, a display module and a TFT array substrate thereof, so as to solve the technical problem that the double-sided display structure in the prior art is complicated, cumbersome and has excessive energy consumption.
  • an embodiment of the present invention provides a TFT array substrate having a double-sided display function, the TFT array substrate including two oppositely disposed graphene display units, and the two graphene display units.
  • the reflective layer between.
  • the graphene display units respectively include:
  • An insulating layer disposed on the substrate
  • a light emitting layer a source, and a drain disposed on the insulating layer, wherein the source and the drain are respectively in contact with the light emitting layer;
  • the gates of the two graphene display units are respectively disposed on two sides of the reflective layer, and the structures of the two graphene display units are symmetrically disposed along both sides of the reflective layer.
  • the gate is made of a graphene oxide material.
  • the light emitting layer, the source, and the drain are both made of a reduced graphene oxide material.
  • the reduced graphene oxide used to form the source and the drain has an oxygen content less than the oxygen content of the reduced graphene oxide used to form the emissive layer.
  • the substrate is made of a flexible material.
  • the material of the dielectric layer is SiO2 or SiNx.
  • the material of the insulating layer has good oxygen barrier and thermal conductivity.
  • another aspect of the present invention provides a double-sided display module, which includes the TFT array substrate according to any of the above embodiments.
  • the present invention also provides a double-sided display comprising the double-sided display module described in the above embodiments.
  • the double-sided display, the display module and the TFT array substrate provided by the invention provide a graphene display unit on both sides of the reflective layer, so that the light on both sides of the reflective layer does not interfere with each other, and The reflection of the reflective layer enhances the brightness of the two display units; the structure of the double-sided display is simpler and the volume is greatly reduced, which is beneficial to the thinning and thinning of the double-sided display; in addition, the use of graphene oxide as the light-emitting layer and the electrode layer
  • the material improves the driving display rate of the pixel, can improve the resolution of the picture and the sawtooth phenomenon at the edge of the text picture, and uses graphene oxide as the light-emitting layer and the electrode layer material, and can also make the flexible double-sided according to the material of the substrate.
  • the display is possible.
  • FIG. 1 is a schematic diagram showing the structure of a commonly used double-sided liquid crystal display in the prior art
  • FIG. 2 is a schematic structural view of a preferred embodiment of a TFT array substrate having a double-sided display function according to the present invention
  • 3 is a single-sided display effect diagram of a conventional pixel design
  • Figure 5 is a single-sided display effect diagram of the display using the graphene oxide material of the present invention.
  • Figure 6 is a double-sided display effect view of the display using the graphene oxide material of the present invention.
  • Figure 7 is a schematic block diagram showing a preferred embodiment of a double-sided display of the present invention.
  • Graphene has a hard texture, high transparency (penetration rate ⁇ 97.7%), high thermal conductivity (up to 5300) W/m•K), high electron mobility (over 15,000) Excellent in particular, such as cm2/V•s), has been increasing in applications in recent years, especially in touch screen applications (as an alternative to traditional transparent conductive film ITO) and in LED applications.
  • the use of graphene in the field of display has been expanded due to the appearance of graphene light-emitting elements.
  • a light-emitting diode made of a graphene material can adjust the color of the graphene light-emitting diode by the gate voltage.
  • FIG. 2 is a schematic structural view of a preferred embodiment of a TFT array substrate having a double-sided display function according to the present invention.
  • the TFT array substrate includes two graphene display units 100 disposed opposite to each other and a reflective layer 200 disposed between the two graphene display units 100.
  • the two graphene display units 100 include a substrate 110, an insulating layer 120, a light emitting layer 130, a source 140, a drain 150, a dielectric layer 160, and a gate 170, respectively.
  • the insulating layer 120 is disposed on the substrate 110.
  • the material of the substrate 110 may be glass, metal, PET (polyethylene terephthalate, polyethylene) Terephthalate (referred to as PET) and other materials with high hardness and high dimensional stability, of course, can also be soft materials, and thus can be made into a flexible screen.
  • PET polyethylene terephthalate, polyethylene
  • the insulating layer 120 needs to have the characteristics of good oxygen barrier, good thermal conductivity, and good heat dissipation passage of the device.
  • the light emitting layer 130, the source 140 and the drain 150 are disposed on the insulating layer 120, wherein the source 140 and the drain 150 are in contact with the light emitting layer 130, respectively.
  • the luminescent layer 130, the source 140 and the drain 150 are all made of a reduced graphene oxide material, that is, the graphene material used for the luminescent layer 130, the source 140 and the drain 150 has a lower oxygen content than the gate 170.
  • the oxygen content of the material graphene oxide is not limited to the material graphene oxide.
  • the light-emitting layer 130, the source 140, and the drain 150 are all used to reduce graphene oxide (reduced Graphene Oxide, abbreviated as rGO) material, but the oxygen content thereof is also different.
  • the reduced graphene oxide used in the source 140 and the drain 150 has a lower oxygen content than the reduced graphene oxide used in the light-emitting layer 130. Oxygen content.
  • the light emission wavelength of the light emitting layer 130 can be continuously adjusted by the voltage of the gate 170.
  • the luminescent layer 130 can be printed by inkjet, Roll The coating is applied to the roll by spin coating.
  • the source 140 and the drain 150 are also formed in the same manner as the light-emitting layer 130.
  • the light-emitting layer 130, the source 140 and the drain 150 are further covered with a dielectric layer 160.
  • the material of the dielectric layer 160 may be SiO2, SiNx or the like.
  • a gate 170 is disposed on the dielectric layer 160, and the material of the gate 170 is preferably graphene oxide (Graphene) Oxide (GO), the GO of the gate 170 can be prepared by a modified hummers method (a method for preparing graphene by a redox method), that is, complete graphene oxide is prepared by partially oxidizing graphene.
  • the gate 170 can also be printed by inkjet, Roll To Roll, spin coating to make a coating.
  • the gates 170 of the two graphene display units 100 are respectively disposed on two sides of the reflective layer 200, and the structures of the two graphene display units 100 are symmetrically disposed along both sides of the reflective layer 200.
  • the reflective layer 200 is a metal thin film, so that the light on both sides of the reflective layer 200 does not interfere with each other, and the display brightness of the array substrates on both sides is improved due to the reflection of the reflective layer 200.
  • the pixel electrode is preferably driven by the field color sequence, and the graphene oxide has the characteristics of fast response, which can improve the resolution of the picture and the sawtooth phenomenon at the edge of the text picture.
  • the display effect is significantly improved compared to the sub-pixel condition of the conventional pixel design.
  • FIG. 3 is a single-sided display effect diagram of a conventional pixel design, in which a black portion represents an opposite pixel
  • FIG. 4 is a double-sided display effect diagram in the case of a conventional pixel design
  • FIG. 5 is a view of the present invention.
  • FIG. 6 is a double-sided display effect diagram of a display using a graphene oxide material according to the present invention. It is obvious that the display effect of the display of the present invention is adopted (especially the resolution of the screen and The sawtooth phenomenon at the edge of the text picture has been significantly improved.
  • the embodiment of the present invention further provides a double-sided display module and a double-sided display.
  • the display module includes the TFT array substrate described in the above embodiment.
  • TFT array substrate described in the above embodiment.
  • FIG. 7 is a schematic block diagram showing a preferred embodiment of a double-sided display of the present invention.
  • the double-sided display includes a housing 8 and a double-sided display module described in the above embodiment provided inside the housing 8.
  • a double-sided display module described in the above embodiment provided inside the housing 8.
  • the double-sided display module please refer to the detailed description in the above embodiments, and other structural features of the double-sided display are within the scope of the understanding of those skilled in the art, and are not described herein again.
  • the double-sided display, the display module and the TFT array substrate provided by the invention provide a graphene display unit on both sides of the reflective layer, so that the light on both sides of the reflective layer does not interfere with each other, and The reflection of the reflective layer enhances the brightness of the two display units; the structure of the double-sided display is simpler and the volume is greatly reduced, which is beneficial to the thinning and thinning of the double-sided display; in addition, the use of graphene oxide as the light-emitting layer and the electrode layer
  • the material improves the driving display rate of the pixel, can improve the resolution of the picture and the sawtooth phenomenon at the edge of the text picture, and uses graphene oxide as the light-emitting layer and the electrode layer material, and can also make the flexible double-sided according to the material of the substrate.
  • the display is possible.

Abstract

一种双面显示器、显示模组及其TFT阵列基板，TFT阵列基板包括相对设置的两个石墨烯显示单元（100）以及设于两个石墨烯显示单元（100）之间的反射层（200）。通过在反射层（200）的两侧分别设置石墨烯显示单元（100），使反射层（200）两面的光不会相互干扰，同时由于反射层（200）的反光，提升了两片显示单元的亮度；该双面显示器的结构更加简单，同时体积大大减小，有利于双面显示器的轻薄化。

Description

双面显示器、显示模组及其TFT阵列基板
【技术领域】
本发明涉及双面显示器的技术领域，具体是涉及一种双面显示器、显示模组及其TFT阵列基板。
【背景技术】
在传统的双面液晶显示中，由于采用透射式液晶面板，需应用到两片液晶显示屏以及相应的背光源，所以厚度较厚且功耗很高，尤其是在明亮的户外进行显示时，显示屏需要较高的亮度才能看清楚，因此就需要显示器背光具有很高的亮度，这样会导致显示器功耗很高，不利于节能减排。如图1所示，图1是现有技术中一种常用的双面液晶显示器结构示意简图。
【发明内容】
本发明实施例提供一种双面显示器、显示模组及其TFT阵列基板，以解决现有技术中双面显示器结构复杂、笨重且能耗过高的技术问题。
为解决上述问题，本发明实施例一方面提供一种具有双面显示功能的TFT阵列基板，所述TFT阵列基板包括相对设置的两个石墨烯显示单元以及设于所述两个石墨烯显示单元之间的反射层。
根据本发明一优选实施例，所述石墨烯显示单元分别包括：
基板；
设于基板上的绝缘层；
设于所述绝缘层上的发光层、源极以及漏极，其中，所述源极和所述漏极分别与所述发光层相接触；
盖设于所述发光层、所述源极以及所述漏极上的介电层；以及
设于所述介电层上的栅极；
其中，两个石墨烯显示单元的栅极分别贴设在反射层的两侧，所述两个石墨烯显示单元的结构沿所述反射层两侧对称设置。
根据本发明一优选实施例，所述栅极采用氧化石墨烯材料制成。
根据本发明一优选实施例，所述发光层、所述源极以及所述漏极均采用还原氧化石墨烯材料制成。
根据本发明一优选实施例，制成所述源极和所述漏极采用的还原氧化石墨烯的含氧量小于制成所述发光层采用的还原氧化石墨烯的含氧量。
根据本发明一优选实施例，所述基板采用柔性材料制成。
根据本发明一优选实施例，所述介电层的材料为SiO2或者SiNx。
根据本发明一优选实施例，所述绝缘层的材质具有良好的隔氧和导热性。
为解决上述技术问题，本发明另一方面提供一种双面显示模组，所述双面显示模组包括上述实施例中任一项所述的TFT阵列基板。
本发明还提供一种双面显示器，所述双面显示器包括上述实施例中所述的双面显示模组。
相对于现有技术，本发明提供的双面显示器、显示模组及其TFT阵列基板，通过在反射层的两侧分别设置石墨烯显示单元，使反射层两面的光不会相互干扰，同时由于反射层的反光，提升了两片显示单元的亮度；该双面显示器的结构更加简单，同时体积大大减小，有利于双面显示器的轻薄化；另外，利用氧化石墨烯作为发光层以及电极层材料，提高了像素的驱动显示速率，可以改善画面的分辨率和文字图画边缘的锯齿现象，同时采用氧化石墨烯作为发光层以及电极层材料，还可以根据基板材质的不同，使制作柔性双面显示器成为可能。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是现有技术中一种常用的双面液晶显示器结构示意简图；
图2是本发明具有双面显示功能的TFT阵列基板一优选实施例的结构示意图；
图3是传统像素设计单面显示效果图；
图4是传统像素设计情况下双面显示效果图；
图5是本发明采用氧化石墨烯材料显示器的单面显示效果图；
图6是本发明采用氧化石墨烯材料显示器的双面显示效果图；以及
图7是本发明双面显示器一优选实施例的结构示意简图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
石墨烯具有质地坚硬，透明高（穿透率≈97.7%），导热系数高（达5300 W/m•K），电子迁移率高（超过15000 cm2/V•s）等优良特定，近年来在显示器上的应用，逐渐增多，尤其是在触摸屏的应用（作为替代传统透明导电薄膜ITO）和在LED方面的应用。近年来由于石墨烯发光元件的出现，使石墨烯在显示领域的应用得以扩展。采用石墨烯材料制作的发光二极管可通过栅极电压调节石墨烯发光二极管发光颜色。
请参阅图2，图2是本发明具有双面显示功能的TFT阵列基板一优选实施例的结构示意图。
该TFT阵列基板包括相对设置的两个石墨烯显示单元100以及设于两个石墨烯显示单元100之间的反射层200。
具体而言，两个石墨烯显示单元100分别包括基板110、绝缘层120、发光层130、源极140、漏极150、介电层160以及栅极170。
绝缘层120设于基板110上，其中，基板110的材质可以为玻璃、金属、PET（聚对苯二甲酸乙二酯，polyethylene terephthalate，简称PET）等硬度较大、尺寸稳定性高的材料，当然还可以为软质材料，进而可以制作柔性屏。绝缘层120需要具备隔氧、导热性好并能够提供器件良好的散热通道的特点。
发光层130、源极140以及漏极150设于绝缘层120上，其中，源极140和漏极150分别与发光层130相接触。优选地，发光层130、源极140以及漏极150均采用还原氧化石墨烯材料制成，即发光层130、源极140以及漏极150采用的石墨烯材料的含氧量小于栅极170采用材料氧化石墨烯的含氧量。
进一步地，虽然，发光层130、源极140以及漏极150均采用的还原氧化石墨烯（reduced Graphene Oxide，简称rGO）材料制成，但其含氧量也不相同，优选为，源极140和漏极150采用的还原氧化石墨烯的含氧量小于制成发光层130采用的还原氧化石墨烯的含氧量。该发光层130的发光波长可以通过栅极170电压进行连续调节。其中，发光层130可以通过喷墨印刷、Roll to Roll、旋转涂覆的方式制作涂层，同样的，源极140和漏极150也采用与发光层130相同的制作方式。在本领域技术人员的理解范围内，此处不再赘述。
发光层130、源极140以及漏极150上还盖设有介电层160，介电层160材料可以是SiO2、SiNx等。介电层160上设有栅极170，栅极170的材料优选为氧化石墨烯（Graphene oxide，简称GO），栅极170的GO可以采用改进的hummers法（氧化还原法制备石墨烯的方法）制备得到，即通过部分氧化的石墨烯制备出完全氧化石墨烯。而栅极170也可以通过喷墨印刷、Roll to Roll、旋转涂覆的方式制作涂层。
在该实施例中，两个石墨烯显示单元100的栅极170分别贴设在反射层200的两侧，两个石墨烯显示单元100的结构沿反射层200两侧对称设置。优选地，该反射层200为金属薄膜，使反射层200两面的光不会相互干扰，同时由于反射层200的反光，提升了两侧阵列基板的显示亮度。
其中，像素电极优选通过场色序的驱动方式，再加上氧化石墨烯具有响应速度快的特点，可以很好的改善画面的分辨率和文字图画边缘的锯齿现象。与传统像素设计的等子像素状况相比，显示效果明显改善。请一并参阅图3-图6，图3是传统像素设计单面显示效果图，其中，黑色部分表示对面像素；图4是传统像素设计情况下双面显示效果图，图5是本发明采用氧化石墨烯材料显示器的单面显示效果图，图6是本发明采用氧化石墨烯材料显示器的双面显示效果图，很明显，采用本发明技术方案的显示器显示效果（尤其是画面的分辨率和文字图画边缘的锯齿现象）有明显改善。
另外，本发明实施例还提供一种双面显示模组及双面显示器，该显示模组包括上述实施例中所述的TFT阵列基板，详细结构特征描述请参阅上述实施例。
图7是本发明双面显示器一优选实施例的结构示意简图。其中，该双面显示器包括壳体8以及设于壳体8内部的上述实施例中所述的双面显示模组。关于双面显示模组的技术特征请参阅上述实施例中的详细描述，而双面显示器的其他部分结构技术特征，在本领域技术人员的理解范围内，此处亦不再赘述。
相对于现有技术，本发明提供的双面显示器、显示模组及其TFT阵列基板，通过在反射层的两侧分别设置石墨烯显示单元，使反射层两面的光不会相互干扰，同时由于反射层的反光，提升了两片显示单元的亮度；该双面显示器的结构更加简单，同时体积大大减小，有利于双面显示器的轻薄化；另外，利用氧化石墨烯作为发光层以及电极层材料，提高了像素的驱动显示速率，可以改善画面的分辨率和文字图画边缘的锯齿现象，同时采用氧化石墨烯作为发光层以及电极层材料，还可以根据基板材质的不同，使制作柔性双面显示器成为可能。
以上所述仅为本发明的部分实施例，并非因此限制本发明的保护范围，凡是利用本发明说明书及附图内容所作的等效装置或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (20)

  1. 一种具有双面显示功能的TFT阵列基板，其中，所述TFT阵列基板包括相对设置的两个石墨烯显示单元以及设于所述两个石墨烯显示单元之间的反射层；所述石墨烯显示单元分别包括：
    基板；
    设于基板上的绝缘层；
    设于所述绝缘层上的发光层、源极以及漏极，所述源极和所述漏极分别与所述发光层相接触，所述发光层、所述源极以及所述漏极均采用还原氧化石墨烯材料制成；
    盖设于所述发光层、所述源极以及所述漏极上的介电层；以及
    设于所述介电层上的栅极，所述栅极采用氧化石墨烯材料制成；
    两个石墨烯显示单元的栅极分别贴设在反射层的两侧，所述两个石墨烯显示单元的结构沿所述反射层两侧对称设置。
  2. 根据权利要求1所述的TFT阵列基板，其中，制成所述源极和所述漏极采用的还原氧化石墨烯的含氧量小于制成所述发光层采用的还原氧化石墨烯的含氧量。
  3. 根据权利要求1所述的TFT阵列基板，其中，所述基板采用柔性材料制成。
  4. 根据权利要求1所述的TFT阵列基板，其中，所述介电层的材料为SiO2或者SiNx。
  5. 根据权利要求1所述的TFT阵列基板，其中，所述绝缘层的材质具有良好的隔氧和导热性。
  6. 一种双面显示模组，其中，所述双面显示模组包括TFT阵列基板，所述TFT阵列基板包括相对设置的两个石墨烯显示单元以及设于所述两个石墨烯显示单元之间的反射层。
  7. 根据权利要求6所述的双面显示模组，其中，所述石墨烯显示单元分别包括：
    基板；
    设于基板上的绝缘层；
    设于所述绝缘层上的发光层、源极以及漏极，所述源极和所述漏极分别与所述发光层相接触；
    盖设于所述发光层、所述源极以及所述漏极上的介电层；以及
    设于所述介电层上的栅极；
    两个石墨烯显示单元的栅极分别贴设在反射层的两侧，所述两个石墨烯显示单元的结构沿所述反射层两侧对称设置。
  8. 根据权利要求7所述的双面显示模组，其中，所述栅极采用氧化石墨烯材料制成。
  9. 根据权利要求7所述的双面显示模组，其中，所述发光层、所述源极以及所述漏极均采用还原氧化石墨烯材料制成。
  10. 根据权利要求9所述的双面显示模组，其中，制成所述源极和所述漏极采用的还原氧化石墨烯的含氧量小于制成所述发光层采用的还原氧化石墨烯的含氧量。
  11. 根据权利要求7所述的双面显示模组，其中，所述基板采用柔性材料制成。
  12. 根据权利要求7所述的双面显示模组，其中，所述介电层的材料为SiO2或者SiNx。
  13. 根据权利要求7所述的双面显示模组，其中，所述绝缘层的材质具有良好的隔氧和导热性。
  14. 一种双面显示器，其中，所述双面显示器包括双面显示模组，所述双面显示模组包括TFT阵列基板，所述TFT阵列基板包括相对设置的两个石墨烯显示单元以及设于所述两个石墨烯显示单元之间的反射层。
  15. 根据权利要求14所述的双面显示器，其中，所述石墨烯显示单元分别包括：
    基板；
    设于基板上的绝缘层；
    设于所述绝缘层上的发光层、源极以及漏极，所述源极和所述漏极分别与所述发光层相接触；
    盖设于所述发光层、所述源极以及所述漏极上的介电层；以及
    设于所述介电层上的栅极；
    两个石墨烯显示单元的栅极分别贴设在反射层的两侧，所述两个石墨烯显示单元的结构沿所述反射层两侧对称设置。
  16. 根据权利要求15所述的双面显示器，其中，所述栅极采用氧化石墨烯材料制成。
  17. 根据权利要求15所述的双面显示器，其中，所述发光层、所述源极以及所述漏极均采用还原氧化石墨烯材料制成。
  18. 根据权利要求17所述的双面显示器，其中，制成所述源极和所述漏极采用的还原氧化石墨烯的含氧量小于制成所述发光层采用的还原氧化石墨烯的含氧量。
  19. 根据权利要求15所述的双面显示器，其中，所述基板采用柔性材料制成。
  20. 根据权利要求15所述的双面显示器，其中，所述绝缘层的材质具有良好的隔氧和导热性。
PCT/CN2016/085463 2016-05-11 2016-06-12 双面显示器、显示模组及其tft阵列基板 WO2017193439A1 (zh)

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105654858B (zh) * 2016-03-22 2019-01-25 深圳市华星光电技术有限公司 双面显示器及其tft阵列基板、阵列基板制作方法
CN106773386B (zh) * 2016-12-23 2020-09-01 武汉华星光电技术有限公司 双面显示装置
CN106876539B (zh) * 2017-02-17 2019-04-05 深圳市华星光电技术有限公司 石墨烯发光晶体管及其制作方法、主动石墨烯发光显示器
CN108398812A (zh) * 2018-04-26 2018-08-14 京东方科技集团股份有限公司 显示面板及其驱动方法、显示装置
CN115171547B (zh) * 2022-05-16 2023-11-28 昆山国显光电有限公司 显示基板及其驱动方法和显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080026853A (ko) * 2006-09-21 2008-03-26 삼성전자주식회사 양면 전반사판이 장착된 도광판을 구비하는 휴대단말기의액정표시장치
TWI351549B (en) * 2004-09-03 2011-11-01 Hon Hai Prec Ind Co Ltd Backlight module capable of emitting light from tw
CN102386296A (zh) * 2010-09-02 2012-03-21 宋健民 石墨烯透明电极、石墨烯发光二极管及其制备方法
CN104155791A (zh) * 2014-07-11 2014-11-19 京东方科技集团股份有限公司 一种双面显示面板以及双面显示装置
CN104576525A (zh) * 2013-11-01 2015-04-29 京东方科技集团股份有限公司 一种柔性阵列基板及其制备方法和显示装置
CN204595384U (zh) * 2015-05-22 2015-08-26 重庆捷尔士显示技术有限公司 一种新型液晶显示器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8173095B2 (en) * 2008-03-18 2012-05-08 Georgia Tech Research Corporation Method and apparatus for producing graphene oxide layers on an insulating substrate
KR101271249B1 (ko) * 2010-12-22 2013-06-10 한국과학기술원 질소가 도핑된 투명 그래핀 필름 및 이의 제조방법
US9477128B2 (en) * 2013-04-19 2016-10-25 Board Of Regents, The University Of Texas System Graphene/metal nanowire hybrid transparent conductive films
CN105303985B (zh) * 2015-11-24 2019-02-26 深圳市华星光电技术有限公司 石墨烯显示器及其显示驱动方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI351549B (en) * 2004-09-03 2011-11-01 Hon Hai Prec Ind Co Ltd Backlight module capable of emitting light from tw
KR20080026853A (ko) * 2006-09-21 2008-03-26 삼성전자주식회사 양면 전반사판이 장착된 도광판을 구비하는 휴대단말기의액정표시장치
CN102386296A (zh) * 2010-09-02 2012-03-21 宋健民 石墨烯透明电极、石墨烯发光二极管及其制备方法
CN104576525A (zh) * 2013-11-01 2015-04-29 京东方科技集团股份有限公司 一种柔性阵列基板及其制备方法和显示装置
CN104155791A (zh) * 2014-07-11 2014-11-19 京东方科技集团股份有限公司 一种双面显示面板以及双面显示装置
CN204595384U (zh) * 2015-05-22 2015-08-26 重庆捷尔士显示技术有限公司 一种新型液晶显示器

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