WO2017146244A8 - 結晶材料およびその製造方法 - Google Patents

結晶材料およびその製造方法 Download PDF

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Publication number
WO2017146244A8
WO2017146244A8 PCT/JP2017/007236 JP2017007236W WO2017146244A8 WO 2017146244 A8 WO2017146244 A8 WO 2017146244A8 JP 2017007236 W JP2017007236 W JP 2017007236W WO 2017146244 A8 WO2017146244 A8 WO 2017146244A8
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WO
WIPO (PCT)
Prior art keywords
oxide
crystal material
producing same
raw material
earth metal
Prior art date
Application number
PCT/JP2017/007236
Other languages
English (en)
French (fr)
Other versions
WO2017146244A1 (ja
Inventor
吉川　彰
有為 横田
雄二 大橋
圭 鎌田
哲男 工藤
井上　憲司
育宏 庄子
悠 五十嵐
元孝 荒川
俊介 黒澤
晃広 山路
Original Assignee
株式会社Ｐｉｅｚｏ Ｓｔｕｄｉｏ
国立大学法人東北大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Ｐｉｅｚｏ Ｓｔｕｄｉｏ, 国立大学法人東北大学 filed Critical 株式会社Ｐｉｅｚｏ Ｓｔｕｄｉｏ
Priority to JP2018501818A priority Critical patent/JP6718161B2/ja
Priority to US16/079,522 priority patent/US11158784B2/en
Priority to EP19167373.0A priority patent/EP3543379A1/en
Priority to EP17756678.3A priority patent/EP3421647B9/en
Publication of WO2017146244A1 publication Critical patent/WO2017146244A1/ja
Publication of WO2017146244A8 publication Critical patent/WO2017146244A8/ja

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8536—Alkaline earth metal based oxides, e.g. barium titanates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/20—Silicates
    • C01B33/24—Alkaline-earth metal silicates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/20—Silicates
    • C01B33/26—Aluminium-containing silicates, i.e. silico-aluminates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/34—Silicates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials
    • H10N30/095—Forming inorganic materials by melting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/02—Particle morphology depicted by an image obtained by optical microscopy
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Luminescent Compositions (AREA)
  • Catalysts (AREA)

Abstract

ランガサイト系酸化物のコングルエント組成を明らかにし、ＡＥ3ＭＥ1+a（Ｇａ1-xＡｌx）3+bＳｉ2+cＯ14（ＡＥはアルカリ土類金属、ＭＥはＮｂまたはＴａ、０≦ｘ≦１、－０．５＜ａ≦０または０＜ａ＜０．５、－０．５＜ｂ≦０または０＜ｂ＜０．５、－０．５＜ｃ≦０または０＜ｃ＜０．５、ただしａ＝ｂ＝ｃ＝０の場合を除く）のいずれかの所望とする組成で結晶を作製する方法を確立することで、不純物の発生を抑制し、歩留まり及び結晶作製速度を向上させることができる。原料はアルカリ土類金属またはその炭酸塩もしくは酸化物、ＮｂまたはＴａまたはそれらの酸化物、Ｇａまたはその酸化物，Ａｌまたはその酸化物，およびＳｉまたはその酸化物を混合して混合原料とする。
PCT/JP2017/007236 2016-02-25 2017-02-24 結晶材料およびその製造方法 WO2017146244A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018501818A JP6718161B2 (ja) 2016-02-25 2017-02-24 結晶材料およびその製造方法
US16/079,522 US11158784B2 (en) 2016-02-25 2017-02-24 Crystal material and method of manufacturing the same
EP19167373.0A EP3543379A1 (en) 2016-02-25 2017-02-24 Langasite-type oxide crystal material and method of manufacturing the same
EP17756678.3A EP3421647B9 (en) 2016-02-25 2017-02-24 Crystal material and method for producing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016034145 2016-02-25
JP2016-034145 2016-02-25

Publications (2)

Publication Number Publication Date
WO2017146244A1 WO2017146244A1 (ja) 2017-08-31
WO2017146244A8 true WO2017146244A8 (ja) 2017-11-02

Family

ID=59685331

Family Applications (1)

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PCT/JP2017/007236 WO2017146244A1 (ja) 2016-02-25 2017-02-24 結晶材料およびその製造方法

Country Status (4)

Country Link
US (1) US11158784B2 (ja)
EP (2) EP3543379A1 (ja)
JP (1) JP6718161B2 (ja)
WO (1) WO2017146244A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10635978B2 (en) 2017-10-26 2020-04-28 SparkCognition, Inc. Ensembling of neural network models

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002271171A (ja) * 2001-03-07 2002-09-20 Tdk Corp 弾性表面波装置用圧電基板および弾性表面波装置
JP2002348197A (ja) * 2001-05-24 2002-12-04 Tdk Corp 圧電単結晶材料及び該圧電単結晶材料を用いた圧電デバイス
JP4246436B2 (ja) * 2002-02-22 2009-04-02 Ｔｄｋ株式会社 圧電単結晶材料及び該圧電単結晶材料を用いた圧電デバイス
JP2008019122A (ja) * 2006-07-12 2008-01-31 Nec Tokin Corp 圧電単結晶組成物
JP4353262B2 (ja) * 2007-03-12 2009-10-28 三菱マテリアル株式会社 弾性表面波デバイス及び圧電デバイス用基板
WO2012049846A1 (ja) 2010-10-13 2012-04-19 Tdk株式会社 ランガサイト型酸化物材料、その製造方法、及び該製造方法で用いられる原材料
CN104695018A (zh) * 2013-12-05 2015-06-10 中国科学院上海硅酸盐研究所 一种硅酸铝镓钽钙压电晶体及其制备方法
JP6489574B2 (ja) * 2014-08-27 2019-03-27 株式会社Ｐｉｅｚｏ Ｓｔｕｄｉｏ 結晶材料およびその製造方法

Also Published As

Publication number Publication date
EP3421647B1 (en) 2022-09-07
EP3543379A1 (en) 2019-09-25
US20190140160A1 (en) 2019-05-09
EP3421647A1 (en) 2019-01-02
JPWO2017146244A1 (ja) 2019-01-10
WO2017146244A1 (ja) 2017-08-31
US11158784B2 (en) 2021-10-26
EP3421647A4 (en) 2019-09-04
JP6718161B2 (ja) 2020-07-08
EP3421647B9 (en) 2022-12-07

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