WO2017133111A1 - 薄膜晶体管的制作方法，阵列基板的制作方法、阵列基板、显示装置 - Google Patents

薄膜晶体管的制作方法，阵列基板的制作方法、阵列基板、显示装置 Download PDF

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WO2017133111A1
WO2017133111A1 PCT/CN2016/081424 CN2016081424W WO2017133111A1 WO 2017133111 A1 WO2017133111 A1 WO 2017133111A1 CN 2016081424 W CN2016081424 W CN 2016081424W WO 2017133111 A1 WO2017133111 A1 WO 2017133111A1
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transition layer
layer
region
photoresist
substrate
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PCT/CN2016/081424
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English (en)
French (fr)
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林子锦
赵海生
裴晓光
彭志龙
孙东江
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京东方科技集团股份有限公司
北京京东方光电科技有限公司
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Priority to US15/328,155 priority Critical patent/US10297449B2/en
Publication of WO2017133111A1 publication Critical patent/WO2017133111A1/zh

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Definitions

  • the present disclosure relates to the field of display technology, and in particular to a method for fabricating a thin film transistor and an array substrate, an array substrate, and a display device.
  • the manufacturing process of the existing array substrate includes sequentially forming a pattern of a gate metal layer, a pattern of an active layer, a pattern of a source/drain metal layer, a pattern of a passivation layer, and a pattern of a transparent conductive layer on a substrate, wherein The pattern of each layer is required to be deposited, coated with photoresist, exposed, developed, etched, stripped, and the like.
  • One of the objectives of the present disclosure is to provide a method for fabricating a thin film transistor and an array substrate, an array substrate, and a display device, which can prevent film layer residual defects and improve the yield of the array substrate.
  • a method of fabricating a thin film transistor includes: forming a transition layer on a substrate; patterning the transition layer to form a transition layer retention region and a transition layer unreserved region, the transition layer unreserved region corresponding to the first a pattern of a structural layer; a material layer for forming the first structural layer is formed on a substrate on which the pattern of the transition layer is formed; and the transition layer is removed, and a portion of the material layer remaining on the substrate forms the The graphic of the first structural layer.
  • the surface of the transition layer retention region has a relief structure.
  • the difference in height between the protrusions and the recesses in the relief structure exceeds the thickness of the first structure layer.
  • the material of the transition layer is a photoresist material.
  • the first structural layer is an active layer.
  • the transition layer is a positive photoresist
  • the transition layer retention region having a surface having a concave-convex structure comprises: exposing the transition layer with a gray tone mask, the gray mask An opaque region, a semi-transmissive region, and a completely transparent region are formed; a first portion of the transition layer retention region corresponding to the opaque region and a transition layer corresponding to the semi-transmissive region are formed after development a second portion of the retention region and the transition layer unretained region corresponding to the fully transparent region, wherein a thickness of the transition layer of the first portion is greater than a thickness of the transition layer of the second portion.
  • the transition layer is a negative photoresist
  • the transition layer retention region having a surface having a concave-convex structure comprises: exposing the transition layer with a gray tone mask, the gray mask
  • the invention comprises an opaque region, a semi-transmissive region and a completely transparent region; a first portion of the transition layer retention region corresponding to the completely transparent region is formed after development, and the transition layer corresponding to the semi-transmissive region is formed a second portion of the retention region and the transition layer unretained region corresponding to the opaque region, wherein a thickness of the transition layer of the first portion is greater than a thickness of the transition layer of the second portion.
  • the removing the transition layer comprises contacting the stripping solution with the exposed transition layer such that the transition layer is removed from the substrate by reacting with the stripping solution.
  • the removing the transition layer, the portion of the material layer remaining on the substrate forming a pattern of the first structural layer comprises: coating a layer on the material layer a layer of photoresist; exposing the photoresist by using a mask to form a photoresist retention region and a photoresist unretained region, wherein the photoresist retention region corresponds to the pattern of the first structural layer Removing the material layer of the photoresist unretained region by dry etching; contacting the stripping liquid with the transition layer such that the transition layer and the stripping solution react from the substrate.
  • the material of the transition layer is a photoresist material.
  • the first structural layer is an active layer.
  • the transition layer is a positive photoresist
  • the transition layer retention region having a surface having a concave-convex structure comprises: exposing the transition layer with a gray tone mask, the gray mask
  • the method includes an opaque region, a semi-transmissive region, and a completely transparent region; a first portion of the transition layer retention region corresponding to the opaque region after development, and the corresponding portion of the semi-transmissive region a second portion of the transition layer retention region and the transition layer unretained region corresponding to the fully transparent region, wherein a thickness of the transition layer of the first portion is greater than a thickness of the transition layer of the second portion.
  • the transition layer is a negative photoresist
  • the transition layer retention region having a surface having a concave-convex structure comprises: exposing the transition layer with a gray tone mask, the gray mask
  • the invention comprises an opaque region, a semi-transmissive region and a completely transparent region; a first portion of the transition layer retention region corresponding to the completely transparent region is formed after development, and the transition layer corresponding to the semi-transmissive region is formed a second portion of the retention region and the transition layer unretained region corresponding to the opaque region, wherein a thickness of the transition layer of the first portion is greater than a thickness of the transition layer of the second portion.
  • the removing the transition layer comprises contacting the stripping solution with the exposed transition layer such that the transition layer is removed from the substrate by reacting with the stripping solution.
  • the material layer is a-Si and N+a-Si.
  • the method further comprises: providing a substrate; forming a pattern of the gate metal layer on the substrate; and forming a substrate of the pattern of the gate metal layer A gate insulating layer is deposited on the upper surface.
  • Embodiments of the present disclosure also provide a method of fabricating an array substrate on which a thin film transistor is formed by the method described above.
  • Embodiments of the present disclosure also provide an array substrate including a thin film transistor formed on the substrate and fabricated by the above method.
  • Embodiments of the present disclosure also provide a display device including the array substrate as described above.
  • Embodiments of the present disclosure have the following advantageous effects: in the above solution, a pattern of a transition layer is formed on a substrate, the pattern of the transition layer includes a transition layer retention region and a transition layer unreserved region, and the transition layer unretained region corresponds to a pattern of the active layer Depositing an active layer material on the substrate on which the pattern of the transition layer is formed, so that the pattern of the active layer can be formed after the transition layer is peeled off, since the pattern of the active layer is formed by peeling off the transition layer, without drying
  • the active layer material is etched to obtain a pattern of the active layer. Therefore, even if foreign matter adheres to the active layer material, the residual layer of the active layer can be prevented from being poor, and the yield of the array substrate can be improved.
  • FIG. 1 is a schematic view showing a pattern of forming a gate metal layer on a substrate according to an embodiment of the present disclosure
  • FIG. 2 is a schematic view of the gate insulating layer after forming a gate insulating layer according to an embodiment of the present disclosure
  • FIG. 3 is a schematic view of a photoresist after forming an embodiment of the present disclosure
  • FIG. 4 is a schematic view of an embodiment of the present disclosure after depositing an active layer on a photoresist
  • FIG. 5 is a schematic view of the photoresist after the photoresist is formed in the embodiment of the present disclosure
  • FIG. 6 is a schematic view of a photoresist layer coated on a gate insulating layer according to an embodiment of the present disclosure
  • FIG. 7 is a schematic view of the photoresist after being etched according to an embodiment of the present disclosure.
  • FIG. 8 is a schematic view of an embodiment of the present disclosure after depositing an active layer on a photoresist
  • FIG. 9 is a schematic view showing a photoresist coated on an active layer according to an embodiment of the present disclosure.
  • FIG. 10 is a schematic diagram of etching a photoresist on an active layer according to an embodiment of the present disclosure
  • FIG. 11 is a schematic view of an active layer after being etched according to an embodiment of the present disclosure.
  • an a-Si layer and an N+a-Si layer are sequentially deposited on a gate insulating layer (SiNx may be employed). Then, a photoresist is coated on the N+a-Si layer, and the photoresist above the desired active layer pattern region is retained after exposure and development, the other regions of the photoresist are removed, and the dry etching is performed without receiving light. The gel-protected a-Si layer and the N+a-Si layer are removed. Finally pass the medicine The liquid reaction strips the photoresist to form a pattern of the active layer.
  • SiNx gate insulating layer
  • the embodiments of the present disclosure provide a thin film transistor and an array substrate manufacturing method, an array substrate, and a display, which are related to the problem that the active layer film layer is liable to occur in the related art, resulting in poor bright spots and seriously affecting the yield of the array substrate.
  • the device can avoid residual film defects and improve the yield of the array substrate.
  • the embodiment provides a method for fabricating a thin film transistor, including:
  • transition layer to form a transition layer retention region and a transition layer unretained region, wherein the transition layer unretained region corresponds to a pattern of the first structural layer, wherein the surface of the transition layer retention region has a concave-convex structure;
  • the transition layer is removed, and a portion of the material layer remaining on the substrate forms a pattern of the first structural layer.
  • a pattern of a transition layer is formed on the substrate, the pattern of the transition layer includes a transition layer retention region and a transition layer unreserved region, and the transition layer unretained region corresponds to the pattern of the active layer, and the pattern of the transition layer is formed.
  • An active layer material is deposited on the substrate.
  • the pattern of the active layer can be formed after the transition layer is peeled off. Since the present embodiment forms the pattern of the active layer by peeling off the transition layer, and does not dry-etch the active layer material to obtain the pattern of the active layer, even if foreign matter adheres to the active layer material, The residual layer of the active layer is prevented from being poor, and the yield of the array substrate is improved.
  • the transition layer can be formed using a photoresist.
  • the first structural layer may be an active layer, and the first structural layer is not limited to the active layer.
  • the first structural layer is an active layer, the residual defect of the active layer film layer can be effectively avoided, and the yield of the array substrate can be improved.
  • the transition layer is a positive photoresist
  • the transition layer retention region having a surface having a concave-convex structure comprises:
  • Exposing the transition layer with a gray tone mask comprising an opaque region, a semi-transmissive region, and a fully transparent region;
  • the transition layer has an unretained region, wherein a thickness of the transition layer of the first portion is greater than a thickness of the transition layer of the second portion.
  • the transition layer is a negative photoresist
  • the transition layer retention region having a surface having a concave-convex structure comprises:
  • Exposing the transition layer with a gray tone mask comprising an opaque region, a semi-transmissive region, and a fully transparent region;
  • the transition layer has an unretained region, wherein a thickness of the transition layer of the first portion is greater than a thickness of the transition layer of the second portion.
  • the specific manner of removing the transition layer is:
  • the stripper is contacted with the exposed transition layer such that the transition layer is removed from the substrate by reaction with the stripper.
  • the step of removing the transition layer, the portion of the material layer remaining on the substrate forming the pattern of the first structural layer comprises:
  • the stripper is contacted with the transition layer such that the transition layer is removed from the substrate by reaction with the stripper.
  • the residual layer of the active layer film can be ensured in the subsequent transition layer peeling process.
  • the realization party There is no need to form a transition layer retention area with uneven surface, which can reduce the technical difficulty.
  • the material layer is a-Si and N+a-Si.
  • the present embodiment provides a method of fabricating an array substrate on which a thin film transistor is formed by the method described above.
  • a pattern of a transition layer is formed on the substrate, the pattern of the transition layer includes a transition layer retention region and a transition layer unreserved region, and the transition layer unretained region corresponds to a pattern of the active layer of the thin film transistor, and a transition layer is formed
  • the active layer material is deposited on the patterned substrate.
  • the pattern of the active layer can be formed after the transition layer is peeled off. Since the pattern of the active layer is formed by peeling off the transition layer, and the pattern of the active layer is obtained by dry etching the active layer material, active matter can be avoided even if foreign matter adheres to the active layer material. The residual film layer is poor, and the yield of the array substrate is improved.
  • the embodiment further provides an array substrate including a thin film transistor formed on the substrate and fabricated by the above method.
  • the array substrate of the present embodiment does not have residual defects of the active layer film layer, and can greatly improve the yield of the array substrate.
  • the embodiment further provides a display device including the array substrate as described above.
  • the display device may be any product or component having a display function, such as a liquid crystal television, a liquid crystal display, a digital photo frame, a mobile phone, a tablet computer, etc., wherein the display device further includes a flexible circuit board, a printed circuit board, and a backboard.
  • the bright spot is poor.
  • the embodiment provides a method for fabricating the array substrate, and the manufacturing method specifically includes the following steps 1-5.
  • Step 1 As shown in FIG. 1, a base substrate 1 is provided, and a pattern of the gate metal layer 2 is formed on the base substrate 1.
  • Step 2 As shown in FIG. 2, the gate insulating layer 3 is deposited on the substrate 1 through the step 2 to prevent the gate metal layer 2 from being short-circuited.
  • Step 3 the photoresist 10 is coated on the substrate 1 through the step 2, and the photoresist 10 is exposed by using a gray tone mask. After development, a photoresist unretained region corresponding to the active layer pattern and a photoresist remaining region corresponding to the other regions are formed, and the photoresist remaining region includes the first portion 11 and the second portion 12. Wherein, the photoresist thicknesses of the first portion 11 and the second portion 12 are not equal, so that the photoresist retention region forms a "pit shape", and the surface of the photoresist retention region is uneven.
  • Step 4 as shown in FIG. 4, the sinking of the active layer 4 is performed on the substrate 1 through the step 3. product.
  • the active layer 4 includes an a-Si layer and an N+a-Si layer. Since the photoresist is not present in the unretained region of the photoresist, the deposited active layer 4 can be in direct contact with the gate insulating layer 3. Active layers of other regions are deposited on the photoresist 10.
  • the active layer film layer fracture state will occur during the deposition of the active layer 4 to The photoresist covered by the active layer 4 is exposed so that the stripping solution can be contacted with the photoresist to complete the reaction during the subsequent stripping process.
  • Step 5 the photoresist 10 is brought into contact with the stripping liquid to peel off the photoresist. Since the active layer 4 is deposited on the photoresist 10 in this embodiment, dry etching is not required after the active layer 4 is deposited, and after the photoresist 10 is stripped, the photoresist remains in the region. The active layer 4 is peeled off to form a pattern of the active layer 4.
  • a photoresist is coated on the gate insulating layer to remove the photoresist in the active layer pattern region, and a photoresist having a surface unevenness is formed in other regions, and then deposition of the active layer is performed. Since the surface of the photoresist is uneven, during the deposition of the active layer, the active layer at the high and low places may be broken, so that the photoresist under the active layer is exposed.
  • the photoresist is removed after reacting with the stripping solution, and the active layer deposited on the surface of the photoresist is peeled off. The active layer deposited in the unretained area of the photoresist does not fall off, forming a pattern of the active layer.
  • the present embodiment forms the pattern of the active layer by peeling off the transition layer, the pattern of the active layer is obtained without dry etching the active layer material. Therefore, even if foreign matter adheres to the active layer material, the residual defect of the active layer film layer can be avoided, and the yield of the array substrate can be improved.
  • the embodiment in order to avoid the phenomenon of the residual layer of the active layer film, resulting in a poor spot, the embodiment provides a method for fabricating an array substrate, and the manufacturing method specifically includes the following steps 1-9.
  • Step 1 As shown in FIG. 1, a base substrate 1 is provided, and a pattern of the gate metal layer 2 is formed on the base substrate 1.
  • Step 2 As shown in FIG. 2, the gate insulating layer 3 is deposited on the substrate 1 through the step 2 to prevent the gate metal layer 2 from being short-circuited.
  • Step 3 As shown in FIG. 6, the photoresist 10 is coated on the substrate 1 which has passed through the step 2.
  • Step 4 As shown in FIG. 7, the photoresist 10 is exposed, and after development, a photoresist unretained region corresponding to the active layer pattern and a photoresist remaining region corresponding to other regions are formed.
  • Step 5 the active layer 4 is deposited on the substrate 1 through the step 4, and is active.
  • the layer 4 includes an a-Si layer and an N+a-Si layer. Since the photoresist is not present in the unretained region of the photoresist, the active layer 4 deposited in the region may directly contact the gate insulating layer 3, and other regions. The active layer is deposited on the photoresist 10.
  • Step 6 As shown in FIG. 9, the photoresist 10 is deposited on the substrate 1 through the step 5.
  • Step 7 As shown in FIG. 10, the photoresist 10 is exposed, and after development, a photoresist-retained region corresponding to the active layer pattern and a photoresist-unretained region corresponding to other regions are formed.
  • Step 8 As shown in FIG. 11, the active layer 4 of the unretained region of the photoresist is removed by dry etching to form a pattern of the active layer 4.
  • Step 9 As shown in FIG. 5, the photoresist 10 is brought into contact with the stripping liquid to peel off the photoresist 10.
  • the active layer film layer can be left in the subsequent transition layer peeling process.
  • This kind of implementation does not require the formation of a photoresist-retained area with uneven surface, which can reduce the technical difficulty.

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Abstract

一种薄膜晶体管及阵列基板的制作方法、阵列基板、显示装置。其中，薄膜晶体管的制作方法包括：在基板(1)上形成过渡层(10)；对所述过渡层(10)进行构图形成过渡层保留区域和过渡层未保留区域，所述过渡层未保留区域对应第一结构层(4)的图形；在形成有所述过渡层(10)的图形的基板(1)上形成用于形成所述第一结构层(4)的材料层；除去所述过渡层(10)，所述材料层留在基板(1)上的部分形成所述第一结构层(4)的图形。

Description

薄膜晶体管的制作方法，阵列基板的制作方法、阵列基板、显示装置
相关申请的交叉引用
本申请主张在2016年2月2日在中国提交的中国专利申请号No.201610073355.2的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示技术领域，特别是指一种薄膜晶体管及阵列基板的制作方法、阵列基板、显示装置。
背景技术
现有阵列基板的制作工艺包括在衬底基板上依次形成栅金属层的图形、有源层的图形、源漏金属层的图形、钝化层的图形和透明导电层的图形，其中，在制作每一层的图形时，都需要采用沉积、涂覆光刻胶、曝光、显影、刻蚀、剥离光刻胶等步骤。
在生产过程中，由于环境、设备或其他异常原因，不可避免地导致在膜层上附着尘埃、碎屑等异物。这些异物可在沉积过程中附着，也可在涂覆光刻胶的过程中或在进行干法刻蚀的时候附着。在对有源层进行干法刻蚀时，由于有源层上附着有异物，导致刻蚀气体无法与有源层接触、反应，存在异物的位置将发生有源层膜层残留现象，导致亮点不良，严重影响阵列基板的良品率。
发明内容
本公开的目的之一是提供一种薄膜晶体管及阵列基板的制作方法、阵列基板、显示装置，能够避免膜层残留不良，提高阵列基板的良品率。
为解决上述技术问题，本公开的实施例提供技术方案如下。
一方面，提供一种薄膜晶体管的制作方法，包括：在基板上形成过渡层；对所述过渡层进行构图形成过渡层保留区域和过渡层未保留区域，所述过渡层未保留区域对应第一结构层的图形；在形成有所述过渡层的图形的基板上形成用于形成所述第一结构层的材料层；除去所述过渡层，所述材料层留在基板上的部分形成所述第一结构层的图形。
可选地，在一些实施例中，所述过渡层保留区域的表面具有凹凸结构。
可选地，所述凹凸结构中凸处和凹处的高度差超过第一结构层的厚度。
可选地，所述过渡层的材料为光刻胶材料。
可选地，所述第一结构层为有源层。
可选地，所述过渡层为正性光刻胶，形成表面具有凹凸结构的所述过渡层保留区域包括：采用灰色调掩膜板对所述过渡层进行曝光，所述灰色调掩膜板包括有不透光区域、半透光区域和完全透光区域；显影后形成对应所述不透光区域的所述过渡层保留区域的第一部分、对应所述半透光区域的所述过渡层保留区域的第二部分和对应所述完全透光区域的所述过渡层未保留区域，其中，所述第一部分的过渡层的厚度大于所述第二部分的过渡层的厚度。
可选地，所述过渡层为负性光刻胶，形成表面具有凹凸结构的所述过渡层保留区域包括：采用灰色调掩膜板对所述过渡层进行曝光，所述灰色调掩膜板包括有不透光区域、半透光区域和完全透光区域；显影后形成对应所述完全透光区域的所述过渡层保留区域的第一部分、对应所述半透光区域的所述过渡层保留区域的第二部分和对应所述不透光区域的所述过渡层未保留区域，其中，所述第一部分的过渡层的厚度大于所述第二部分的过渡层的厚度。
可选地，所述除去所述过渡层包括：将剥离液与裸露的所述过渡层接触，使得所述过渡层与剥离液反应从基板上除去。
可选地，在一些实施例中，所述除去所述过渡层，所述材料层留在基板上的部分形成所述第一结构层的图形的步骤包括：在所述材料层上涂覆一层光刻胶；利用掩膜板对所述光刻胶进行曝光，显影后形成光刻胶保留区域和光刻胶未保留区域，所述光刻胶保留区域对应所述第一结构层的图形；利用干法刻蚀除去光刻胶未保留区域的所述材料层；将剥离液与所述过渡层接触，使得所述过渡层与剥离液反应从基板上除去。
可选地，所述过渡层的材料为光刻胶材料。
可选地，所述第一结构层为有源层。
可选地，所述过渡层为正性光刻胶，形成表面具有凹凸结构的所述过渡层保留区域包括：采用灰色调掩膜板对所述过渡层进行曝光，所述灰色调掩膜板包括有不透光区域、半透光区域和完全透光区域；显影后形成对应所述不透光区域的所述过渡层保留区域的第一部分、对应所述半透光区域的所述 过渡层保留区域的第二部分和对应所述完全透光区域的所述过渡层未保留区域，其中，所述第一部分的过渡层的厚度大于所述第二部分的过渡层的厚度。
可选地，所述过渡层为负性光刻胶，形成表面具有凹凸结构的所述过渡层保留区域包括：采用灰色调掩膜板对所述过渡层进行曝光，所述灰色调掩膜板包括有不透光区域、半透光区域和完全透光区域；显影后形成对应所述完全透光区域的所述过渡层保留区域的第一部分、对应所述半透光区域的所述过渡层保留区域的第二部分和对应所述不透光区域的所述过渡层未保留区域，其中，所述第一部分的过渡层的厚度大于所述第二部分的过渡层的厚度。
可选地，所述除去所述过渡层包括：将剥离液与裸露的所述过渡层接触，使得所述过渡层与剥离液反应从基板上除去。
可选地，所述材料层为采用a-Si和N+a-Si。
可选地，在基板上形成过渡层的步骤之前，所述方法还包括：提供一衬底基板；在衬底基板上形成栅金属层的图形；以及在形成栅金属层的图形的衬底基板上沉积栅绝缘层。
本公开实施例还提供了一种阵列基板的制作方法，采用如上所述方法在基板上形成薄膜晶体管。
本公开实施例还提供了一种阵列基板，包括形成在基板上，采用如上方法制作的薄膜晶体管。
本公开实施例还提供了一种显示装置，包括如上所述的阵列基板。
本公开的实施例具有以下有益效果：上述方案中，在基板上形成过渡层的图形，过渡层的图形包括过渡层保留区域和过渡层未保留区域，过渡层未保留区域对应有源层的图形，在形成有过渡层的图形的基板上沉积有源层材料，这样在剥离过渡层后就能形成有源层的图形，由于是通过剥离过渡层来形成有源层的图形，而不用通过干法刻蚀有源层材料来得到有源层的图形，因此，即使有源层材料上附着有异物，也可以避免有源层膜层残留不良，提高阵列基板的良品率。
附图说明
图1为本公开实施例在衬底基板上形成栅金属层的图形后的示意图；
图2为本公开实施例形成栅绝缘层后的示意图；
图3为本公开实施例形成光刻胶后的示意图；
图4为本公开实施例在光刻胶上沉积有源层后的示意图；
图5为本公开实施例剥离光刻胶，形成有源层的图形后的示意图；
图6为本公开实施例在栅绝缘层上涂覆光刻胶后的示意图；
图7为本公开实施例对光刻胶进行刻蚀后的示意图；
图8为本公开实施例在光刻胶上沉积有源层后的示意图；
图9为本公开实施例在有源层上涂覆光刻胶后的示意图；
图10为本公开实施例对有源层上的光刻胶进行刻蚀后的示意图；
图11为本公开实施例对有源层进行刻蚀后的示意图。
附图标记
1衬底基板  2栅金属层  3栅绝缘层  4有源层
10光刻胶
具体实施方式
为使本公开的实施例要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开专利申请说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”或者“一”等类似词语也不表示数量限制，而是表示存在至少一个。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也相应地改变。
相关技术中，在形成有源层的图形时，是在栅绝缘层(可以采用SiNx)上依次沉积a-Si层和N+a-Si层。然后在N+a-Si层上涂覆光刻胶，曝光显影后保留所需要有源层图案区域上方的光刻胶，将其他区域光刻胶除去，再通过干法刻蚀将没有受光刻胶保护的a-Si层及N+a-Si层除去。最后再通过药 液反应将光刻胶剥离，从而形成有源层的图形。在生产过程中，由于环境、设备或其他异常原因，不可避免地导致在膜层上附着尘埃、碎屑等异物。这些异物可在沉积过程中附着，也可在涂覆光刻胶的过程中或在进行干法刻蚀的时候附着。在对有源层进行干法刻蚀时，由于有源层上附着有异物，导致刻蚀气体无法与有源层接触、反应，存在异物的位置将发生有源层膜层残留现象，导致亮点不良，严重影响阵列基板的良品率。
本公开的实施例针对相关技术中易发生有源层膜层残留现象，导致亮点不良，严重影响阵列基板的良品率的问题，提供了一种薄膜晶体管及阵列基板的制作方法、阵列基板、显示装置，能够避免膜层残留不良，提高阵列基板的良品率。
一方面，本实施例提供了一种薄膜晶体管的制作方法，包括：
在基板上形成过渡层；
对所述过渡层进行构图形成过渡层保留区域和过渡层未保留区域，所述过渡层未保留区域对应第一结构层的图形，其中所述过渡层保留区域的表面具有凹凸结构；
在形成有所述过渡层的图形的基板上形成用于形成所述第一结构层的材料层；
除去所述过渡层，所述材料层留在基板上的部分形成所述第一结构层的图形。
本实施例中，在基板上形成过渡层的图形，过渡层的图形包括过渡层保留区域和过渡层未保留区域，过渡层未保留区域对应有源层的图形，在形成有过渡层的图形的基板上沉积有源层材料。这样，在剥离过渡层后就能形成有源层的图形。由于本实施例是通过剥离过渡层来形成有源层的图形，而不用通过干法刻蚀有源层材料来得到有源层的图形，因此，即使有源层材料上附着有异物，也可以避免有源层膜层残留不良，提高阵列基板的良品率。
具体实施例中，过渡层可以采用光刻胶形成。
可选实施例中，所述第一结构层可以为有源层，第一结构层不局限于有源层。但在第一结构层为有源层时，可以有效避免有源层膜层残留不良，提高阵列基板的良品率。
可选地，所述过渡层为正性光刻胶，形成表面具有凹凸结构的所述过渡层保留区域包括：
采用灰色调掩膜板对所述过渡层进行曝光，所述灰色调掩膜板包括有不透光区域、半透光区域和完全透光区域；
显影后形成对应所述不透光区域的所述过渡层保留区域的第一部分、对应所述半透光区域的所述过渡层保留区域的第二部分和对应所述完全透光区域的所述过渡层未保留区域，其中，所述第一部分的过渡层的厚度大于所述第二部分的过渡层的厚度。
可选地，所述过渡层为负性光刻胶，形成表面具有凹凸结构的所述过渡层保留区域包括：
采用灰色调掩膜板对所述过渡层进行曝光，所述灰色调掩膜板包括有不透光区域、半透光区域和完全透光区域；
显影后形成对应所述完全透光区域的所述过渡层保留区域的第一部分、对应所述半透光区域的所述过渡层保留区域的第二部分和对应所述不透光区域的所述过渡层未保留区域，其中，所述第一部分的过渡层的厚度大于所述第二部分的过渡层的厚度。
可选地，除去所述过渡层的具体方式为：
将剥离液与裸露的所述过渡层接触，使得所述过渡层与剥离液反应从基板上除去。
可选地，所述除去所述过渡层，所述材料层留在基板上的部分形成所述第一结构层的图形的步骤包括：
在所述材料层上涂覆一层光刻胶；
利用掩膜板对所述光刻胶进行曝光，显影后形成光刻胶保留区域和光刻胶未保留区域，所述光刻胶保留区域对应所述第一结构层的图形；
利用干法刻蚀除去光刻胶未保留区域的所述材料层；
将剥离液与所述过渡层接触，使得所述过渡层与剥离液反应从基板上除去。
这样，在光刻胶未保留区域即使因为有异物等原因导致有源层膜层残留，在后续的过渡层剥离工艺中仍然可以保证有源层膜层残留脱落。该种实现方 式不需要形成表面凹凸不平的过渡层保留区域，可以降低技术难度。
具体实施例中，所述材料层为采用a-Si和N+a-Si。
另一方面，本实施例提供了一种阵列基板的制作方法，采用如上所述方法在基板上形成薄膜晶体管。
本实施例中，在基板上形成过渡层的图形，过渡层的图形包括过渡层保留区域和过渡层未保留区域，过渡层未保留区域对应薄膜晶体管的有源层的图形，在形成有过渡层的图形的基板上沉积有源层材料。这样，在剥离过渡层后就能形成有源层的图形。由于是通过剥离过渡层来形成有源层的图形，而不用通过干法刻蚀有源层材料来得到有源层的图形，因此，即使有源层材料上附着有异物，也可以避免有源层膜层残留不良，提高阵列基板的良品率。
另一方面，本实施例还提供了一种阵列基板，包括形成在基板上，采用如上方法制作的薄膜晶体管。本实施例的阵列基板不会出现有源层膜层残留不良，能够大大提高阵列基板的良品率。
另一方面，本实施例还提供了一种显示装置，包括如上所述的阵列基板。所述显示装置可以为：液晶电视、液晶显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件，其中，所述显示装置还包括柔性电路板、印刷电路板和背板。
在一个实施例中，为了避免有源层膜层残留现象，导致亮点不良，本实施例提供了一种阵列基板的制作方法，该制作方法具体包括以下步骤1-5。
步骤1、如图1所示，提供一衬底基板1，并在衬底基板1上形成栅金属层2的图形。
步骤2、如图2所示，在经过步骤2的衬底基板1上沉积栅绝缘层3，以防止栅金属层2短路。
步骤3、如图3所示，在经过步骤2的衬底基板1上涂布光刻胶10，采用灰色调掩膜板对光刻胶10进行曝光。显影后形成对应有源层图形的光刻胶未保留区域和对应其他区域的光刻胶保留区域，光刻胶保留区域包括有第一部分11和第二部分12。其中，第一部分11和第二部分12的光刻胶厚度不相等，使得光刻胶保留区域形成“坑状”形态，光刻胶保留区域表面高低不平。
步骤4、如图4所示，在经过步骤3的衬底基板1上进行有源层4的沉 积。有源层4包括a-Si层和N+a-Si层。由于在光刻胶未保留区域不存在光刻胶，因此，沉积的有源层4可以直接与栅绝缘层3接触。其他区域的有源层则沉积在光刻胶10上。由于光刻胶保留区域表面不平整，且高处和低处的高度差超过有源层4的厚度，因此，在有源层4沉积过程中将出现有源层膜层断裂状态，以使被有源层4覆盖的光刻胶被裸露出来，以便在后续进行剥离工艺时，剥离液可以与光刻胶接触完成反应。
步骤5、如图5所示，将光刻胶10与剥离液接触以剥离光刻胶。由于本实施例中有源层4是沉积在光刻胶10上的，因此，在沉积有源层4之后不需要进行干法刻蚀，将光刻胶10剥离之后，光刻胶保留区域的有源层4会随之脱落，形成有源层4的图形。
本实施例是在栅绝缘层上涂布一层光刻胶，除去有源层图形区域的光刻胶，并在其他区域形成表面不平整的光刻胶，然后进行有源层的沉积。由于光刻胶的表面高低不平，因此，在沉积有源层的过程中，高处与低处的有源层会出现断裂，使有源层下方的光刻胶被裸露出来。光刻胶与剥离液反应后被除去，沉积在光刻胶表面的有源层脱落。而沉积在光刻胶未保留区域的有源层不会脱落，形成有源层的图形。由于本实施例是通过剥离过渡层来形成有源层的图形，而不用通过干法刻蚀有源层材料来得到有源层的图形。因此，即使有源层材料上附着有异物，也可以避免有源层膜层残留不良，提高阵列基板的良品率。
在一个实施例中，为了避免有源层膜层残留现象，导致亮点不良，本实施例提供了一种阵列基板的制作方法，该制作方法具体包括以下步骤1-9。
步骤1、如图1所示，提供一衬底基板1，并在衬底基板1上形成栅金属层2的图形。
步骤2、如图2所示，在经过步骤2的衬底基板1上沉积栅绝缘层3，以防止栅金属层2短路。
步骤3、如图6所示，在经过步骤2的衬底基板1上涂布光刻胶10。
步骤4、如图7所示，对光刻胶10进行曝光，显影后形成对应有源层图形的光刻胶未保留区域和对应其他区域的光刻胶保留区域。
步骤5、如图8所示，在经过步骤4的衬底基板1上沉积有源层4，有源 层4包括a-Si层和N+a-Si层，由于在光刻胶未保留区域不存在光刻胶，因此，该区域沉积的有源层4可以直接与栅绝缘层3接触，其他区域的有源层则沉积在光刻胶10上。
步骤6、如图9所示，在经过步骤5的衬底基板1上沉积光刻胶10。
步骤7、如图10所示，对光刻胶10进行曝光，显影后形成对应有源层图形的光刻胶保留区域和对应其他区域的光刻胶未保留区域。
步骤8、如图11所示，利用干法刻蚀除去光刻胶未保留区域的有源层4，形成有源层4的图形。
步骤9、如图5所示，将光刻胶10与剥离液接触以剥离光刻胶10。
这样在其他区域即使因为有异物等原因导致有源层膜层残留，由于有源层是形成在光刻胶上，在后续的过渡层剥离工艺中仍然可以保证有源层膜层残留脱落。该种实现方式不需要形成表面凹凸不平的光刻胶保留区域，可以降低技术难度。
以上所述是本公开的可选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开所述原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本公开的保护范围。

Claims (19)

  1. 一种薄膜晶体管的制作方法，包括：
    在基板上形成过渡层；
    对所述过渡层进行构图形成过渡层保留区域和过渡层未保留区域，所述过渡层未保留区域对应第一结构层的图形；
    在形成有所述过渡层的图形的基板上形成用于形成所述第一结构层的材料层；
    除去所述过渡层，所述材料层留在基板上的部分形成所述第一结构层的图形。
  2. 根据权利要求1所述的薄膜晶体管的制作方法，其中，所述过渡层保留区域的表面具有凹凸结构。
  3. 根据权利要求2所述的薄膜晶体管的制作方法，其中，所述凹凸结构中凸处和凹处的高度差超过第一结构层的厚度。
  4. 根据权利要求2所述的薄膜晶体管的制作方法，其中，所述过渡层的材料为光刻胶材料。
  5. 根据权利要求2所述的薄膜晶体管的制作方法，其中，所述第一结构层为有源层。
  6. 根据权利要求5所述的薄膜晶体管的制作方法，其中，所述过渡层为正性光刻胶，形成表面具有凹凸结构的所述过渡层保留区域包括：
    采用灰色调掩膜板对所述过渡层进行曝光，所述灰色调掩膜板包括有不透光区域、半透光区域和完全透光区域；
    显影后形成对应所述不透光区域的所述过渡层保留区域的第一部分、对应所述半透光区域的所述过渡层保留区域的第二部分和对应所述完全透光区域的所述过渡层未保留区域，其中，所述第一部分的过渡层的厚度大于所述第二部分的过渡层的厚度。
  7. 根据权利要求5所述的薄膜晶体管的制作方法，其中，所述过渡层为负性光刻胶，形成表面具有凹凸结构的所述过渡层保留区域包括：
    采用灰色调掩膜板对所述过渡层进行曝光，所述灰色调掩膜板包括有不 透光区域、半透光区域和完全透光区域；
    显影后形成对应所述完全透光区域的所述过渡层保留区域的第一部分、对应所述半透光区域的所述过渡层保留区域的第二部分和对应所述不透光区域的所述过渡层未保留区域，其中，所述第一部分的过渡层的厚度大于所述第二部分的过渡层的厚度。
  8. 根据权利要求5所述的薄膜晶体管的制作方法，其中，所述除去所述过渡层包括：
    将剥离液与裸露的所述过渡层接触，使得所述过渡层与剥离液反应从基板上除去。
  9. 根据权利要求1所述的薄膜晶体管的制作方法，其中，所述除去所述过渡层，所述材料层留在基板上的部分形成所述第一结构层的图形的步骤包括：
    在所述材料层上涂覆一层光刻胶；
    利用掩膜板对所述光刻胶进行曝光，显影后形成光刻胶保留区域和光刻胶未保留区域，所述光刻胶保留区域对应所述第一结构层的图形；
    利用干法刻蚀除去光刻胶未保留区域的所述材料层；
    将剥离液与所述过渡层接触，使得所述过渡层与剥离液反应从基板上除去。
  10. 根据权利要求9所述的薄膜晶体管的制作方法，其中，所述过渡层的材料为光刻胶材料。
  11. 根据权利要求9所述的薄膜晶体管的制作方法，其中，所述第一结构层为有源层。
  12. 根据权利要求11所述的薄膜晶体管的制作方法，其中，所述过渡层为正性光刻胶，形成表面具有凹凸结构的所述过渡层保留区域包括：
    采用灰色调掩膜板对所述过渡层进行曝光，所述灰色调掩膜板包括有不透光区域、半透光区域和完全透光区域；
    显影后形成对应所述不透光区域的所述过渡层保留区域的第一部分、对应所述半透光区域的所述过渡层保留区域的第二部分和对应所述完全透光区域的所述过渡层未保留区域，其中，所述第一部分的过渡层的厚度大于所述 第二部分的过渡层的厚度。
  13. 根据权利要求11所述的薄膜晶体管的制作方法，其中，所述过渡层为负性光刻胶，形成表面具有凹凸结构的所述过渡层保留区域包括：
    采用灰色调掩膜板对所述过渡层进行曝光，所述灰色调掩膜板包括有不透光区域、半透光区域和完全透光区域；
    显影后形成对应所述完全透光区域的所述过渡层保留区域的第一部分、对应所述半透光区域的所述过渡层保留区域的第二部分和对应所述不透光区域的所述过渡层未保留区域，其中，所述第一部分的过渡层的厚度大于所述第二部分的过渡层的厚度。
  14. 根据权利要求11所述的薄膜晶体管的制作方法，其中，所述除去所述过渡层包括：
    将剥离液与裸露的所述过渡层接触，使得所述过渡层与剥离液反应从基板上除去。
  15. 根据权利要求1-14中任一项所述的薄膜晶体管的制作方法，其中，所述材料层为采用a-Si和N+a-Si。
  16. 根据权利要求1-15中任一项所述的薄膜晶体管的制作方法，其中，在基板上形成过渡层的步骤之前，所述方法还包括：
    提供一衬底基板；
    在衬底基板上形成栅金属层的图形；以及
    在形成栅金属层的图形的衬底基板上沉积栅绝缘层。
  17. 一种阵列基板的制作方法，包括采用如权利要求1-16中任一项所述方法在基板上形成薄膜晶体管的步骤。
  18. 一种阵列基板，包括形成在基板上、采用如权利要求1-16中任一项所述方法制作的薄膜晶体管。
  19. 一种显示装置，包括如权利要求18所述的阵列基板。
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