WO2017110620A1 - Module de cellule solaire - Google Patents

Module de cellule solaire Download PDF

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Publication number
WO2017110620A1
WO2017110620A1 PCT/JP2016/087232 JP2016087232W WO2017110620A1 WO 2017110620 A1 WO2017110620 A1 WO 2017110620A1 JP 2016087232 W JP2016087232 W JP 2016087232W WO 2017110620 A1 WO2017110620 A1 WO 2017110620A1
Authority
WO
WIPO (PCT)
Prior art keywords
power generation
sealing material
substrate
solar cell
cell module
Prior art date
Application number
PCT/JP2016/087232
Other languages
English (en)
Japanese (ja)
Inventor
公子 井村
英治 駒山
祐輔 田島
Original Assignee
ソーラーフロンティア株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ソーラーフロンティア株式会社 filed Critical ソーラーフロンティア株式会社
Priority to JP2017558059A priority Critical patent/JP7077017B2/ja
Publication of WO2017110620A1 publication Critical patent/WO2017110620A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Definitions

  • the present invention relates to a solar cell module.
  • a solar cell module is generally formed by adhering a protective member such as a cover glass with a light-transmitting sealing material such as EVA on the surface side on which a power generation cell (photoelectric conversion unit) on a substrate is formed. Furthermore, a structure in which a light-shielding sealing material made of butyl rubber or the like covers the outer surface of the sealing material and seals the wiring on the outer edge of the solar cell module may be employed (for example, Patent Document 1).
  • Such a configuration provided with the sealing material reduces moisture intrusion into the power generation cell and improves the moisture resistance reliability of the solar cell module.
  • the present invention has been made in view of the above points, and an object of the present invention is to provide a solar cell module capable of suppressing peeling of electrodes constituting a power generation cell without deteriorating power generation performance.
  • a solar cell module is a first substrate and a power generation unit formed on the first substrate, and includes a light absorption layer and an electrode provided on the light absorption layer.
  • a power generation unit having a power generation cell, a connection electrode connected to the power generation cell, a wiring connected to the connection electrode, and a buffer provided on the connection electrode and positioned between the power generation cell and the wiring A member, a sealing material that seals the power generation cell, a second substrate laminated on the sealing material, and a sealing material that is formed so as to cover the outer surface of the sealing material. The interface between the material and the sealing material is located on the buffer member.
  • the disclosed technology it is possible to provide a solar cell module capable of suppressing the peeling of the electrodes constituting the power generation cell without deteriorating the power generation performance.
  • FIG. 1 It is a schematic plan view of the solar cell module according to the embodiment. It is a schematic sectional drawing of the solar cell module which concerns on embodiment. It is a figure (the 1) which illustrates the manufacturing process of the solar cell module which concerns on embodiment. It is a figure (the 2) which illustrates the manufacturing process of the solar cell module which concerns on embodiment. It is a figure (the 3) which illustrates the manufacturing process of the solar cell module which concerns on embodiment.
  • FIG. 1 is a schematic plan view of a solar cell module 10 according to an embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view of the solar cell module 10 according to the embodiment of the present invention. 1, illustration of the sealing material 14, the second substrate 15, the sealing material 16, and the buffer member 17 shown in FIG. 2 is omitted.
  • the solar cell module 10 includes a first substrate 11, a power generation cell 12, a wiring 13, a sealing material 14, a second substrate 15, a sealing material 16, And a buffer member 17.
  • the first substrate 11 is a portion that becomes a base for forming the power generation cell 12 and the like.
  • the first substrate 11 for example, blue plate glass (soda lime glass), low alkali glass, resin, metal, or the like can be used.
  • the thickness of the first substrate 11 can be about 1.8 mm, for example.
  • the power generation cell 12 is formed on the first substrate 11.
  • the power generation cell 12 has a structure in which a back electrode 121, a light absorption layer 122, and a transparent electrode 123 are sequentially laminated from the first substrate 11 side.
  • the power generation unit is configured by the power generation cell 12 and the connection electrode 18 provided on the first substrate 11 on the side of the power generation cell 12.
  • the back electrode 121 is formed on the first substrate 11.
  • the back electrode 121 for example, molybdenum (Mo) or a metal containing at least molybdenum can be used.
  • the back electrode 121 is divided by dividing grooves 12x provided along a predetermined direction.
  • the thickness of the back electrode 121 can be, for example, about several tens of nm to several ⁇ m.
  • the connection electrode 18 can be formed of the same material as the back electrode 121.
  • the connection electrode 18 can have the same thickness as the back electrode 121.
  • the light absorption layer 122 is a layer made of a p-type semiconductor, and is formed on the back electrode 121 and in the dividing groove 12x.
  • the light absorbing layer 122 is divided by dividing grooves 12y provided along a predetermined direction.
  • the light absorption layer 122 is a part that photoelectrically converts irradiated sunlight.
  • the electromotive force generated by photoelectric conversion of the light absorption layer 122 can be taken out as current from the wiring 13 provided on the connection electrode 18.
  • the wiring 13 is led out to the back surface through the hole 20 provided in the first substrate 11, and current is taken out through a terminal box (not shown).
  • the light absorption layer 122 for example, a compound made of copper (Cu), indium (In), selenium (Se), copper (Cu), indium (In), gallium (Ga), selenium (Se), sulfur ( A compound made of S), amorphous silicon, or the like can be used.
  • a compound made of copper (Cu), indium (In), selenium (Se), copper (Cu), indium (In), gallium (Ga), selenium (Se), sulfur ( A compound made of S), amorphous silicon, or the like can be used.
  • a CuInSe 2, Cu (InGa) Se 2, Cu (InGa) (SSe) 2 or the like a CuInSe 2, Cu (InGa) Se 2, Cu (InGa) (SSe) 2 or the like.
  • the thickness of the light absorption layer 122 can be, for example, about several ⁇ m to several tens of ⁇ m.
  • a buffer layer (not shown) may be formed on the surface of the light absorption layer 122.
  • the buffer layer is a high-resistance layer having a function of preventing current leakage from the light absorption layer 122.
  • a zinc compound for example, zinc sulfide (ZnS), cadmium sulfide (CdS), indium sulfide (InS), or the like can be used.
  • the thickness of the buffer layer can be about 5 to 50 nm, for example.
  • the transparent electrode 123 is a transparent layer made of an n-type semiconductor, and is formed on the light absorption layer 122 and in the dividing groove 12y.
  • a zinc oxide thin film (ZnO), an ITO thin film, or the like can be used as the transparent electrode 123.
  • ZnO zinc oxide thin film
  • the resistance can be reduced by adding boron (B), aluminum (Al), gallium (Ga), or the like as a dopant.
  • the thickness of the transparent electrode 123 can be set to about several ⁇ m to several tens of ⁇ m, for example.
  • the light absorption layer 122 and the transparent electrode 123 form a pn junction.
  • the light absorption layer 122 and the transparent electrode 123 are divided by dividing grooves 12z provided along a predetermined direction. Each part divided
  • channel 12z comprises the several electric power generation cell 12.
  • the transparent electrode 123 formed in the division groove 12y of the predetermined power generation cell 12 is electrically connected to the back electrode 121 of the adjacent power generation cell 12 through the division groove 12y. That is, the plurality of cells divided by the dividing groove 12z are connected in series.
  • a sealing material 14 for sealing the light receiving surface side of the power generation cells 12 is provided, and on the sealing material 14 a second substrate 15 is provided.
  • a translucent material such as ethylene vinyl acetate (EVA) resin or polyvinyl butyral (PVB) resin can be used.
  • the thickness of the sealing material 14 can be set to, for example, about 0.2 to 1.0 mm.
  • a white plate tempered glass plate having a thickness of about 0.5 to 4.0 mm can be used.
  • a sealing material 16 that covers the wiring 13 is provided in the outer edge region of the surface of the first substrate 11 where the power generation cells 12 are formed.
  • the wiring 13 can be passed through the sealing material 16, for example.
  • the sealing material 16 is formed between the outer edge region of the first substrate 11 and the outer edge region of the second substrate 15 so as to cover the outer surface of the sealing material 14.
  • the mutually opposing surfaces of the substrate 15 are bonded.
  • the sealing material 16 for example, butyl rubber, silicone resin, or the like can be used.
  • the buffer member 17 is provided on the connection electrode 18, and is positioned between the power generation cell 12 and the wiring 13 on the first substrate 11 in a plan view (viewed from the normal direction of the first substrate 11). is doing.
  • the buffer member 17 has a function of buffering stress at the end of the power generation cell 12 (near the interface between the sealing material 14 and the sealing material 16).
  • the interface between the sealing material 14 and the sealing material 16 is located on the buffer member 17.
  • the buffer member 17 is a non-power generation cell that has the same layer structure as the power generation cell but does not contribute to power generation.
  • the buffer member 17 is formed adjacent to the power generation cell 12.
  • the buffer member 17 is provided on the first substrate 11, and the interface between the sealing material 14 and the sealing material 16 is positioned on the buffer member 17.
  • the thickness of the sealing material 14 changes near the interface between the sealing material 14 and the sealing material 16 (a step is generated). It will be.
  • the sealing material in the vicinity of the interface between the sealing material 14 and the sealing material 16 is provided by positioning the interface between the sealing material 14 and the sealing material 16 on the buffer member 17 like the solar cell module 10.
  • the thickness of 14 is substantially constant.
  • the degree of shrinkage when a temperature gradient is applied to the sealing material 14 becomes substantially constant in the vicinity of the interface between the sealing material 14 and the sealing material 16, so that stress is hardly generated.
  • the interface between the sealing material 14 and the sealing material 16 is located on the buffer member 17, and the sealing material 16 does not overlap the power generation cell 12.
  • the local temperature rise due to current concentration can be prevented. Note that the local temperature rise due to current concentration means that when the sealing material 16 is overlaid on the power generation cell 12, the resistance value of the power generation cell in that portion increases, so the resistance value of the power generation cells other than that portion The current is concentrated in the lower part and the temperature rises locally.
  • the position of the power generation cell and the wiring is set so that the sealing material does not overlap the power generation cell even if the sealing material is crushed in the laminating process without changing the size of the glass substrate.
  • the area of the power generation cell is reduced and the power generation performance is reduced. That is, the solar cell module disclosed in Patent Document 1 cannot prevent the power generation performance from being lowered without changing the size of the glass substrate.
  • the solar cell module 10 according to the present embodiment it is possible to prevent a decrease in power generation performance without changing the size of the first substrate 11 that is a glass substrate or the like.
  • FIG. 3 to 5 are diagrams illustrating a manufacturing process of the solar cell module.
  • the power generation cell 12 and the dividing grooves 12x and 12y are formed on the first substrate 11 by a known method.
  • B has shown the outer edge area
  • the power generation cell 12 is patterned by forming a division groove 12 z that divides the light absorption layer 122 and the transparent electrode 123 along a predetermined direction, and is positioned in the outer edge region B of the power generation cell 12.
  • the light absorption layer 122 and the transparent electrode 123 to be removed are removed.
  • the connection electrode 18 is formed in the dividing groove 12z and in the outer edge region B
  • the buffer member 17 is formed on the upper surface of the connection electrode 18 on the outer edge region B side of the power generation cell 12.
  • the buffer member 17 is a non-power generation cell that has the same layer structure as the power generation cell but does not contribute to power generation.
  • a YAG laser or the like may be used to irradiate the light absorption layer 122 and the transparent electrode 123 in a region to be removed with a pulsed laser beam.
  • the light absorption layer 122 and the transparent electrode 123 may be mechanically removed using a needle or the like without using a laser (mechanical scribe).
  • the wiring 13 is joined to the upper surface of the connection electrode 18 exposed in the outer edge region B using solder or the like.
  • the wiring 13 for example, an electrode ribbon made of copper or the like can be used.
  • the structure in which the sealing material 14 and the sealing material 16 are formed in a predetermined region of the second substrate 15 is used, and the first substrate 11 and the second substrate 15 are provided in the predetermined region of the structure shown in FIG.
  • the solar cell module 10 shown in FIGS. 1 and 2 is completed.
  • the transparent electrode 123 constituting the uppermost surface of the power generation cell 12 can be prevented from being peeled off by bonding so that the interface between the sealing material 14 and the sealing material 16 is located on the buffer member 17.
  • the patterning step of the power generation cell 12 (step of forming the dividing grooves 12z) and the step of forming the buffer member 17 can be combined, so that the solar cell module 10 can be manufactured by forming the buffer member 17. An increase in time required can be prevented.
  • the substrate structure solar cell module has been described in the above embodiment, but the present invention can also be applied to a super straight structure solar cell module.
  • the super straight structure it is possible to suppress the possibility that the metal electrode located on the side opposite to the transparent electrode is peeled off.
  • the wiring 13 is directly disposed on the connection electrode 18.
  • the light absorption layer 122 and the transparent electrode 123 separated from the buffer member 17 are stacked on the connection electrode 18, and the transparent electrode 123 is stacked.
  • the wiring 13 may be arranged on the top. In this case, since the transparent electrode 123 is connected to the connection electrode 18 via the dividing groove 12y, the wiring 13 on the transparent electrode 123 is also connected to the connection electrode 18.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention porte sur un module de cellule solaire qui comprend : un premier substrat ; une unité de production d'énergie formée sur le premier substrat et comportant une cellule de production d'énergie qui comprend une couche d'absorption de lumière et une électrode disposée sur la partie supérieure de la couche d'absorption de lumière, et une électrode de connexion connectée à la cellule de production d'énergie ; un câblage connecté à l'électrode de connexion ; un élément amortisseur disposé sur l'électrode de connexion, positionné entre la cellule de production d'énergie et le câblage ; un matériau d'encapsulation pour encapsuler la cellule de production d'énergie ; un second substrat stratifié sur le matériau d'encapsulation ; et un élément d'étanchéité formé de façon à recouvrir la surface extérieure du matériau d'encapsulation. L'interface du matériau d'encapsulation et de l'élément d'étanchéité est positionnée sur l'élément amortisseur.
PCT/JP2016/087232 2015-12-24 2016-12-14 Module de cellule solaire WO2017110620A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2017558059A JP7077017B2 (ja) 2015-12-24 2016-12-14 太陽電池モジュール

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015252206 2015-12-24
JP2015-252206 2015-12-24

Publications (1)

Publication Number Publication Date
WO2017110620A1 true WO2017110620A1 (fr) 2017-06-29

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PCT/JP2016/087232 WO2017110620A1 (fr) 2015-12-24 2016-12-14 Module de cellule solaire

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JP (1) JP7077017B2 (fr)
WO (1) WO2017110620A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019197878A (ja) * 2018-05-08 2019-11-14 ベイジン・ハナジー・ソーラー・パワー・インベストメント・カンパニー・リミテッド 発電機構及び製造方法、発電装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148496A (ja) * 1999-11-19 2001-05-29 Kanegafuchi Chem Ind Co Ltd 太陽電池モジュールおよびその製造方法
WO2007071703A1 (fr) * 2005-12-22 2007-06-28 Shell Erneuerbare Energien Gmbh Dispositif photovoltaïque et procédé d’encapsulation
US20120118357A1 (en) * 2010-11-15 2012-05-17 Lg Electronics Inc. Solar cell module
JP2012175079A (ja) * 2011-02-24 2012-09-10 Honda Motor Co Ltd 太陽電池モジュール
JP2016063125A (ja) * 2014-09-19 2016-04-25 ソーラーフロンティア株式会社 太陽電池モジュール及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148496A (ja) * 1999-11-19 2001-05-29 Kanegafuchi Chem Ind Co Ltd 太陽電池モジュールおよびその製造方法
WO2007071703A1 (fr) * 2005-12-22 2007-06-28 Shell Erneuerbare Energien Gmbh Dispositif photovoltaïque et procédé d’encapsulation
US20120118357A1 (en) * 2010-11-15 2012-05-17 Lg Electronics Inc. Solar cell module
JP2012175079A (ja) * 2011-02-24 2012-09-10 Honda Motor Co Ltd 太陽電池モジュール
JP2016063125A (ja) * 2014-09-19 2016-04-25 ソーラーフロンティア株式会社 太陽電池モジュール及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019197878A (ja) * 2018-05-08 2019-11-14 ベイジン・ハナジー・ソーラー・パワー・インベストメント・カンパニー・リミテッド 発電機構及び製造方法、発電装置

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JPWO2017110620A1 (ja) 2018-10-18
JP7077017B2 (ja) 2022-05-30

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