WO2017104020A1 - Appareil et procédé de mesure - Google Patents

Appareil et procédé de mesure Download PDF

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Publication number
WO2017104020A1
WO2017104020A1 PCT/JP2015/085222 JP2015085222W WO2017104020A1 WO 2017104020 A1 WO2017104020 A1 WO 2017104020A1 JP 2015085222 W JP2015085222 W JP 2015085222W WO 2017104020 A1 WO2017104020 A1 WO 2017104020A1
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WO
WIPO (PCT)
Prior art keywords
bias voltage
voltage value
electromagnetic wave
measurement
detection element
Prior art date
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PCT/JP2015/085222
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English (en)
Japanese (ja)
Inventor
田中　博之
孝典 落合
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パイオニア株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by パイオニア株式会社 filed Critical パイオニア株式会社
Priority to PCT/JP2015/085222 priority Critical patent/WO2017104020A1/fr
Priority to JP2017555924A priority patent/JP6538198B2/ja
Publication of WO2017104020A1 publication Critical patent/WO2017104020A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/08—Measuring electromagnetic field characteristics

Definitions

  • the present invention relates to the technical field of measuring devices and methods for measuring electromagnetic waves such as terahertz waves.
  • this type of device for example, it has non-target forward and reverse current-voltage characteristics, operates as an oscillation element at the first operating point showing negative differential resistance, and exhibits non-linear characteristics that are not in the negative resistance region.
  • An apparatus including a terahertz oscillation detection element that operates as a detection element at a second operating point has been proposed (see Patent Document 1).
  • Patent Document 1 does not disclose how to set the bias voltage applied to the terahertz oscillation detection element. Then, when the bias voltage changes or the characteristics of the terahertz oscillation detection element change due to changes in the operating environment such as temperature, it may be difficult to maintain the stability of the detection operation of the device. There is a technical problem.
  • the present invention has been made in view of the above problems, for example, and an object of the present invention is to provide a measuring apparatus and method capable of achieving stability of detection operation.
  • the measurement apparatus of the present invention includes a detection unit including an electromagnetic wave detection element having nonlinearity in current-voltage characteristics, a control unit that controls a bias voltage value applied to the electromagnetic wave detection element, Prior to the measurement of electromagnetic waves, the control unit sequentially changes the bias voltage value, specifies the bias voltage value that maximizes the detection sensitivity of the electromagnetic wave detection element, the specified bias voltage value A measurement bias voltage value lower than the predetermined voltage is set.
  • the measurement method of the present invention includes a detection unit including an electromagnetic wave detection element having nonlinearity in current-voltage characteristics, a control unit that controls a bias voltage value applied to the electromagnetic wave detection element, A measurement method in a measuring apparatus comprising: the control unit sequentially changes the bias voltage value prior to electromagnetic wave measurement, and specifies a bias voltage value at which the detection sensitivity of the electromagnetic wave detection element is maximized A specifying step, and a setting step for setting a measurement bias voltage value lower than the specified bias voltage value by a predetermined voltage.
  • the measurement apparatus includes a detection unit including an electromagnetic wave detection element having nonlinearity in current-voltage characteristics, and a control unit that controls a bias voltage value applied to the electromagnetic wave detection element.
  • the electromagnetic wave targeted by the electromagnetic wave detection element is typically a terahertz wave, but may be, for example, a micrometer wave or a millimeter wave.
  • the electromagnetic wave detection element functions as a detection element when a bias voltage within a range corresponding to a nonlinear region where the current-voltage characteristic is nonlinear is applied.
  • the range of the bias voltage corresponding to the nonlinear region is relatively narrow, it is necessary to control the bias voltage with high accuracy.
  • the detection sensitivity of the electromagnetic wave detection element increases as the bias voltage increases, but when the bias voltage value exceeds the maximum detection sensitivity, the detection sensitivity rapidly decreases.
  • the control unit sequentially changes the bias voltage (typically by gradually increasing the bias voltage value) prior to the measurement of the electromagnetic wave, so that the detection sensitivity of the electromagnetic wave detection element is maximized.
  • a bias voltage value is specified.
  • the control unit sets a measurement bias voltage value that is lower than the specified bias voltage value by a predetermined voltage.
  • the “predetermined voltage” is, for example, an electromagnetic wave in consideration of a setting error of a bias voltage value by a control unit, an influence of an environmental change such as a temperature change during the measurement of the electromagnetic wave on the measurement apparatus, The value is set so as not to exceed the bias voltage value at which the detection sensitivity of the electromagnetic wave detecting element becomes maximum during measurement.
  • the optimum bias voltage is always set to the electromagnetic wave detection element. Can be applied. As a result, the stability of the detection operation of the measurement apparatus can be achieved.
  • the measuring apparatus further includes a generator that generates electromagnetic waves. Then, prior to the measurement of the electromagnetic wave, the control unit controls the generation unit to generate the electromagnetic wave, sequentially changes the bias voltage value, and sets the bias voltage value that maximizes the detection value of the electromagnetic wave by the detection unit.
  • the bias voltage value that maximizes the detection sensitivity of the electromagnetic wave detection element is specified.
  • the measurement apparatus further includes a bias current measurement unit that measures a bias current value flowing through the electromagnetic wave detection element when a bias voltage value is applied to the electromagnetic wave detection element. Prepare. Then, the control unit specifies the bias voltage value at which the measured bias current value is maximized as the bias voltage value at which the detection sensitivity of the electromagnetic wave detection element is maximized.
  • the electromagnetic wave is a terahertz wave.
  • the electromagnetic wave detection element may be a resonant tunneling diode.
  • the terahertz wave as an example of electromagnetic waves can be suitably measured with the measuring device concerned.
  • a measurement method is a measurement method in a measurement apparatus including a detection unit including an electromagnetic wave detection element having nonlinearity in current-voltage characteristics, and a control unit that controls a bias voltage value applied to the electromagnetic wave detection element. is there.
  • the control unit sequentially changes the bias voltage value prior to the measurement of the electromagnetic wave, and specifies the bias voltage value that maximizes the detection sensitivity of the electromagnetic wave detection element, and the control unit specifies A setting step of setting a measurement bias voltage value lower than the bias voltage value by a predetermined voltage.
  • the stability of the detection operation of the measurement device can be achieved as in the measurement device according to the above-described embodiment.
  • the various aspects similar to the various aspects of the measuring apparatus which concern on embodiment mentioned above can be taken.
  • a terahertz wave measuring device is given as an example of the measuring device of the present invention.
  • a terahertz wave is mentioned as an example of the electromagnetic wave which concerns on this invention.
  • FIG. 1 is a schematic configuration diagram illustrating the configuration of the terahertz wave measuring apparatus according to the first embodiment.
  • FIG. 2 is a block diagram illustrating a main part of the terahertz wave measuring apparatus according to the first embodiment.
  • the terahertz wave measuring apparatus 1 includes a terahertz wave transmitting / receiving unit (that is, an imaging head unit) 10, a signal processing / control unit 20, a bias voltage generation unit 21, a signal amplifier 22, and a scanning mechanism 30. Yes.
  • the terahertz wave transmission / reception unit 10 includes a generation unit 11, a collimating lens 12, a beam splitter 13, an objective lens 14, a condenser lens 15, and a detection unit 16.
  • the generating unit 11 includes a terahertz wave generating element 11a and a horn antenna 11b.
  • the detection unit 16 includes a terahertz wave detection element 16a and a horn antenna 16b.
  • a bias voltage generated by the bias voltage generation unit 21 is applied to each of the terahertz wave generating element 11a and the terahertz wave detecting element 16a.
  • a bias voltage modulated based on a predetermined reference signal is applied to the terahertz wave generating element 11a.
  • the terahertz wave modulated at a constant frequency is emitted from the generation unit 11.
  • the terahertz wave emitted from the generator 11 is applied to the measurement object 90 via the collimator lens 12, the beam splitter 13, and the objective lens 14.
  • the terahertz wave reflected by the measurement object 90 enters the detection unit 16 through the objective lens 14, the beam splitter 13, and the condenser lens 15. From the detection unit 16, a reception signal corresponding to the incident terahertz wave is output.
  • the scan mechanism 30 drives the terahertz wave transmission / reception unit 10 based on the drive signal from the signal processing / control unit 20.
  • the scanning mechanism 30 further generates an imaging position signal for monitoring the irradiation position of the terahertz wave emitted from the terahertz wave transmitting / receiving unit 10.
  • the signal processing / control unit 20 receives the reception signal output from the detection unit 16 via the signal amplifier 22.
  • the signal processing / control unit 20 When the measurement target 90 is measured by the terahertz wave measuring apparatus 1, the signal processing / control unit 20 generates the terahertz wave reception data signal generated from the reception signal output from the detection unit 16 and the scan mechanism. A mapped terahertz wave image is generated based on the captured imaging position signal.
  • the generation unit 11 may include a plurality of terahertz wave generation elements 11a and horn antennas 11b arranged in an array.
  • the detection unit 16 may include a plurality of terahertz wave detection elements 16a and horn antennas 16b arranged in an array.
  • a hemispherical or super hemispherical silicon lens may be used instead of the horn antenna.
  • a half mirror, a combination of a polarizer and a quarter wavelength plate, or the like can be applied.
  • the bias voltage generation unit 21 and the terahertz wave detection element 16 a are electrically connected to each other via the bias tee circuit 23.
  • the signal amplifier 22 and the terahertz wave detection element 16 a are also electrically connected to each other via the bias tee circuit 23.
  • the bias voltage applied to the terahertz wave detecting element 16a is a DC voltage.
  • the reception signal output from the terahertz wave detection element 16a is an AC signal (voltage).
  • a DC component caused by the bias voltage and an AC component caused by the received signal are synthesized.
  • the bias tee circuit 23 only the AC component caused by the received signal is extracted, and the extracted AC component is input to the signal amplifier 22 as the received signal.
  • FIG. 3 is a characteristic diagram illustrating an example of current-voltage characteristics of the terahertz wave detection element according to the first embodiment.
  • FIG. 4 is a characteristic diagram illustrating an example of the relationship between the bias voltage and the detection sensitivity of the terahertz wave detection element according to the first embodiment.
  • a resonant tunneling diode (Resonant Tunneling Diode: RTD) is used as the terahertz wave detecting element 16a.
  • Resonant tunnel diodes are attracting attention as semiconductor elements that operate in the terahertz band.
  • the resonant tunneling diode has a differential negative resistance region showing differential negative resistance characteristics in the current-voltage characteristics of its operating region (see the range from point B to point C in FIG. 3).
  • the resonant tunneling diode further has a non-linear region exhibiting strong non-linear characteristics in the vicinity of the differential negative resistance region (see the range from point A to point B in FIG. 3).
  • the resonant tunneling diode functions as a terahertz wave generating element when a bias voltage corresponding to the differential negative resistance region is applied.
  • the resonant tunneling diode functions as a terahertz detecting element when a bias voltage corresponding to the nonlinear region is applied.
  • the detection sensitivity of the resonant tunneling diode increases as the bias voltage increases.
  • the bias voltage exceeds the voltage corresponding to point B (that is, the voltage at which the detection sensitivity is maximized)
  • the detection sensitivity of the resonant tunneling diode is rapidly lost. That is, the resonant tunneling diode does not function as a terahertz wave detecting element.
  • the detection sensitivity can be maximized by applying a voltage corresponding to point B as a bias voltage to the resonant tunneling diode.
  • a voltage corresponding to point B as a bias voltage
  • the resonant tunnel diode functions as a terahertz wave detecting element. There is a possibility of disappearing.
  • a voltage lower than the voltage at which the detection sensitivity is maximized (a voltage corresponding to the range from point D to point E in FIG. 4) so that the resonant tunneling diode functions stably as a terahertz wave detecting element. ) Is set to the bias voltage.
  • the signal processing / control unit 20 controls the bias voltage generation unit 21 so as to initialize the bias voltage applied to the terahertz wave detection element 16 a prior to measurement of the measurement object 90 (step). S101).
  • the signal processing / control unit 20 controls the bias voltage generation unit 21 so that the bias voltage applied to the terahertz wave detection element 16a is increased by a predetermined value ⁇ V1 from the current value (step S102).
  • the signal processing / control unit 20 receives the reception signal output from the terahertz wave detection element 16a via the bias tee circuit 23 and the signal amplifier 22, and detects the signal amplitude of the reception signal (step S103). ).
  • the signal processing / control unit 20 compares the signal amplitude detected last time with the signal amplitude detected this time, and determines whether or not the signal amplitude has decreased (step S104).
  • the signal amplitude corresponds to the detection sensitivity of the terahertz wave detection element 16a.
  • the detection sensitivity increases monotonously until the detection sensitivity exceeds the maximum voltage, but the detection sensitivity is maximum.
  • the detection sensitivity decreases rapidly. That is, the case where the signal amplitude is reduced means a case where the bias voltage applied to the terahertz wave detecting element 16a exceeds a voltage at which the detection sensitivity is maximized.
  • the initial value of the signal amplitude detected last time may be set to zero, for example.
  • step S104 When it is determined that the signal amplitude has decreased (step S104: Yes), the signal processing / control unit 20 controls the bias voltage generation unit 21 so as to decrease the bias voltage by a predetermined value ⁇ V2 from the current value ( Step S105).
  • the bias voltage set in the process of step S105 is a bias voltage at the time of measurement applied to the terahertz wave detection element 16a.
  • step S104 when it is determined that the signal amplitude has not decreased (step S104: No), the signal processing / control unit 20 executes the process of step S102 described above again.
  • the predetermined value ⁇ V1 may be appropriately set in consideration of, for example, the time required for the bias voltage setting process, the voltage error of the bias voltage generation unit 21, and the like.
  • the predetermined value ⁇ V2 may be appropriately set in consideration of, for example, the predetermined value ⁇ V1 and the voltage-detection sensitivity characteristic related to the terahertz wave detection element 16a.
  • the setting process of the bias voltage is typically performed before every measurement. As a result, the stability of the detection operation of the terahertz wave detection element 16a and, consequently, the stability of the operation of the terahertz wave measurement device 1 can be achieved.
  • the “terahertz wave detection element 16a”, “detection unit 16”, “signal processing / control unit 20” and “generation unit 11” according to the present embodiment are respectively referred to as “electromagnetic wave detection element” and “detection unit” according to the present invention. ”,“ Control unit ”, and“ generation unit ”.
  • FIG. 6 is a block diagram illustrating a main part of the terahertz wave measuring apparatus according to the second embodiment.
  • FIG. 7 is a flowchart showing the setting process of the measurement bias voltage according to the second embodiment.
  • the terahertz wave measuring apparatus includes a bias current measuring unit 24 that measures a bias current flowing through the terahertz wave detecting element 16a.
  • the bias current measurement unit 24 transmits a signal indicating the measured bias current value to the signal processing / control unit 20.
  • the “bias current measurement unit 24” according to the present embodiment is an example of the “bias current measurement unit” according to the present invention.
  • the bias voltage setting process is performed in a state where the terahertz wave is incident on the detection unit 16.
  • the terahertz wave is not incident on the detection unit 16. Also good.
  • the signal processing / control unit 20 receives a signal indicating the bias current value from the bias current measurement unit 24 (step S201). Next, the signal processing / control unit 20 compares the previously measured bias current value with the currently measured bias current value to determine whether or not the bias current has decreased (step S202).
  • the bias current value measured last time may be set to zero, for example.
  • the signal processing / control unit 20 controls the bias voltage generation unit 21 so as to decrease the bias voltage by a predetermined value ⁇ V2 from the current value (Ste S105).
  • the bias voltage set in the process of step S105 is a bias voltage at the time of measurement applied to the terahertz wave detection element 16a.
  • step S202 determines that the bias current has not decreased. If it is determined that the bias current has not decreased (step S202: No), the signal processing / control unit 20 executes the process of step S102 described above again.
  • the bias voltage measuring unit 24 can measure the current-voltage characteristics of the terahertz wave detecting element 16a. For this reason, in particular, even when the terahertz wave is not incident on the detection unit 16, the bias voltage at the time of measurement applied to the terahertz wave detection element 16a can be appropriately set.
  • SYMBOLS 1 ... Terahertz wave measuring device, 10 ... Terahertz wave transmission / reception part, 11 ... Generation

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Abstract

Cet appareil de mesure (1) comprend : une unité de détection (16) comprenant un élément de détection d'ondes électromagnétiques (16a) présentant une caractéristique courant-tension non linéaire; et une unité de commande (20) qui commande une valeur de tension de polarisation appliquée à l'élément de détection d'ondes électromagnétiques. Avant une mesure d'une onde électromagnétique, l'unité de commande identifie la valeur de tension de polarisation qui donne une sensibilité de détection maximum de l'élément de détection d'ondes électromagnétiques par variation séquentielle de la valeur de tension de polarisation, et fixe une valeur de tension de polarisation à usage de mesure qui est inférieure selon une tension prédéterminée à la valeur de tension de polarisation identifiée.
PCT/JP2015/085222 2015-12-16 2015-12-16 Appareil et procédé de mesure WO2017104020A1 (fr)

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PCT/JP2015/085222 WO2017104020A1 (fr) 2015-12-16 2015-12-16 Appareil et procédé de mesure
JP2017555924A JP6538198B2 (ja) 2015-12-16 2015-12-16 測定装置及び方法

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Cited By (3)

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WO2018221153A1 (fr) * 2017-06-02 2018-12-06 パイオニア株式会社 Appareil de détection d'onde électromagnétique et procédé de réglage de synchronisation d'acquisition de signal de détection
WO2020090783A1 (fr) * 2018-10-30 2020-05-07 パイオニア株式会社 Système de détection d'ondes électromagnétiques
JP2021067593A (ja) * 2019-10-25 2021-04-30 パイオニア株式会社 測定装置及び測定方法

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JP2006278366A (ja) * 2005-03-28 2006-10-12 Canon Inc 電磁波発生・検出素子、およびその製造方法
JP2013005115A (ja) * 2011-06-14 2013-01-07 Rohm Co Ltd 無線伝送装置
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WO2018221153A1 (fr) * 2017-06-02 2018-12-06 パイオニア株式会社 Appareil de détection d'onde électromagnétique et procédé de réglage de synchronisation d'acquisition de signal de détection
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EP3633333A4 (fr) * 2017-06-02 2021-03-10 Pioneer Corporation Appareil de détection d'onde électromagnétique et procédé de réglage de synchronisation d'acquisition de signal de détection
WO2020090783A1 (fr) * 2018-10-30 2020-05-07 パイオニア株式会社 Système de détection d'ondes électromagnétiques
JPWO2020090783A1 (ja) * 2018-10-30 2021-09-24 パイオニア株式会社 電磁波検出システム
JP2021067593A (ja) * 2019-10-25 2021-04-30 パイオニア株式会社 測定装置及び測定方法
JP7346238B2 (ja) 2019-10-25 2023-09-19 パイオニア株式会社 測定装置及び測定方法

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