WO2017096696A1 - 有机发光二极管封装结构、封装方法及有机发光二极管 - Google Patents

有机发光二极管封装结构、封装方法及有机发光二极管 Download PDF

Info

Publication number
WO2017096696A1
WO2017096696A1 PCT/CN2016/071543 CN2016071543W WO2017096696A1 WO 2017096696 A1 WO2017096696 A1 WO 2017096696A1 CN 2016071543 W CN2016071543 W CN 2016071543W WO 2017096696 A1 WO2017096696 A1 WO 2017096696A1
Authority
WO
WIPO (PCT)
Prior art keywords
film layer
emitting diode
light emitting
organic light
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2016/071543
Other languages
English (en)
French (fr)
Inventor
陈黎暄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US14/914,656 priority Critical patent/US9905806B2/en
Publication of WO2017096696A1 publication Critical patent/WO2017096696A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/877—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

Definitions

  • the present invention relates to the field of displays, and in particular, to an organic light emitting diode package structure, a packaging method, and an organic light emitting diode having the same.
  • An Organic Light-Emitting Diode generally consists of a cathode, an anode, and a light-emitting layer.
  • the cathode is generally made of a metal material such as Al and the anode is made of a material such as indium tin oxide (ITO). Electrons and holes are injected from the cathode and the anode, respectively, and excitons are formed in the organic light-emitting layer to excite the light-emitting layer material to emit light.
  • the cathode becomes a reflective layer, causing ambient light or internal stray light to reflect after being incident on the cathode.
  • the cathode is mostly metal, and the reflectance is high, thereby reducing the contrast and sharpness of the OLED. .
  • An organic light emitting diode package structure comprising:
  • the first encapsulating film layer is a polymer film.
  • the material of the first encapsulation film layer is selected from one of a fluorinated polymer, a parylene, a methylcyclopentenolone, and a polyacrylate.
  • the material of the second encapsulation film layer is ceramic.
  • the diffusion particles are spherical particles, hemispherical particles, ellipsoidal particles or curved particles.
  • An organic light emitting diode comprising a cathode and an organic light emitting diode package structure as described above, the organic light emitting diode being formed on the cathode surface.
  • the material of the cathode is selected from one or a combination of aluminum, silver, lithium, magnesium, and indium.
  • An organic light emitting diode packaging method includes the steps of:
  • the scattering particles are formed in any one of the following ways:
  • the position of each heating point corresponds to one scattering particle, and shrinking the material near the heating point to a corresponding heating point to form the scattering particles;
  • the scattering particles are mixed into a solvent, the surface of the first encapsulating film layer is coated with the solvent, and finally the solvent is evaporated by baking or the like, the scattering Particles are formed on the surface of the first encapsulation film layer;
  • the scattering particles are etched on the surface of the first encapsulation film layer with a mask.
  • the OLED packaging method, the package structure, and the light emitting diode form the scattering particles in the cathode package film layer, and the scattering particles can form a scattering effect on ambient light or stray light to reduce the The reflection of the light by the cathode can improve the sharpness of the contrast of the organic light emitting diode.
  • FIG. 1 is a schematic structural view of an organic light emitting diode according to an embodiment of the present invention.
  • FIG. 2 is a top plan view of a first encapsulation film layer of the organic light emitting diode of FIG. 1.
  • FIG. 3 is a flowchart of a method for packaging an organic light emitting diode according to an embodiment of the present invention.
  • FIG. 1 a schematic diagram of an organic light emitting diode 100 according to an embodiment of the present invention is shown.
  • the organic light emitting diode 100 in the figure includes a cathode 10 and a package structure 20 formed on the surface of the cathode 10 .
  • FIG. 1 is only for illustrative purposes.
  • the light emitting diode 100 further includes, but is not limited to, an anode and a light emitting layer between the cathode 10 and the anode.
  • the anode is typically made of an indium tin oxide (ITO) material.
  • the luminescent layer is an organic material layer such as a high molecular polymer.
  • the light-emitting layer After a predetermined voltage is applied between the anode and the cathode 10, the light-emitting layer emits light, and depending on the material composition of the light-emitting layer, the light-emitting layer can be controlled to generate light of three primary colors of RGB.
  • the organic light emitting diode 100 is a top emission organic light emitting diode.
  • the cathode 10 is a metal material layer. Specifically, the cathode 10 may be one or more of aluminum (Al), silver (Ag), lithium (Li), magnesium (Mg), indium (In), and the like. Alloy.
  • the package structure 20 is used for sealing the organic light emitting diode 100 to prevent the organic light emitting diode 100 from being degraded or damaged due to the influence of water, gas and other impurities.
  • the package structure 20 is a light transmissive structure including a first encapsulation film layer 21, a second encapsulation film layer 22, and diffusion particles 23 between the first encapsulation film layer 21 and the second encapsulation film layer 22. .
  • the first encapsulation film layer 21 is formed on the surface of the cathode 10.
  • the first encapsulation film layer 21 is a polymer film.
  • the material of the first encapsulation film layer 21 may be fluorinated.
  • the second encapsulation film layer 22 is formed on a side surface of the first encapsulation film layer 21 facing away from the cathode 10 .
  • the material of the second encapsulation film layer 22 may be the same as the material of the first encapsulation film layer 21 or may be different from the material of the first encapsulation film layer 21. In this embodiment, the material of the second encapsulation film layer 22 is ceramic.
  • the diffusing particles 23 are used to change the direction of incident light to form a scattering of incident light.
  • the diffusion particles 23 may be formed on the first encapsulation film layer 21 or on the second encapsulation film layer 22. In the present embodiment, the diffusion particles 23 are formed on the first encapsulation film layer 21, and the material of the diffusion particles 23 is the same as the material of the first encapsulation film layer 21. Please also refer to Figure 2, the diffusion The particles 23 are substantially spherical particles, and the diffusion particles 23 are substantially uniformly distributed on the surface of the first encapsulating film layer 21. It can be understood that in other embodiments, the shape of the diffusion particles 23 may be hemispherical, ellipsoidal or curved; the distribution of the diffusion particles 23 may be regular or irregular according to needs.
  • FIG. 3 a flow chart of a method for packaging an organic light emitting diode according to an embodiment of the present invention is illustrated.
  • the method is used to form the package structure 20 described above, and includes the following steps:
  • the first encapsulating film layer may be a physical vapor deposition (PVD), a chemical vapor deposition (CVD), an atomic layer deposition (ALD) or any other suitable method. Formed on the surface of the organic light emitting diode.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • the organic light emitting diode is placed in a vacuum chamber, the mother liquid of the first encapsulating film layer material is quickly evaporated into a gas, and the gas is introduced into the vacuum chamber to make the gas Condensing in the liquid form on the cathode surface of the organic light emitting diode; solidifying the liquid agglomerate on the surface of the cathode to form a solid film layer, that is, the first encapsulating film layer.
  • the curing can be cured by ultraviolet irradiation.
  • the mother liquor material may be one of Fluorinated Polymers, Parylene, Cyclotene, and Polyacrylates.
  • the scattering particles may adopt one of the following methods:
  • the position of each heating point corresponds to one scattering particle, and shrinking the material near the heating point to a corresponding heating point to form the scattering particles;
  • the scattering particles are mixed into a solvent, the surface of the first encapsulating film layer is coated with the solvent, and finally the solvent is evaporated by baking or the like, the scattering Particles are formed on the surface of the first encapsulation film layer;
  • the scattering particles are etched on the surface of the first encapsulation film layer with an ultra-high definition mask.
  • the second encapsulating film layer may be formed by using materials and methods similar to those of the first encapsulating film layer, or may be formed by other suitable materials and methods.
  • the material of the second encapsulation film layer is ceramic, which is deposited on the surface of the first encapsulation film layer.
  • the OLED encapsulation method forms the scattering particles in a cathode encapsulation film layer, and the scattering particles can form a scattering effect on ambient light or stray light to reduce reflection of the cathode on the light, thereby improving organic luminescence The contrast of the diode's contrast.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)

Abstract

一种有机发光二极管封装方法、有机发光二极管封装结构（20）及具有所述发光二极管封装结构（20）的有机发光二极管（100）。所述有机发光二极管封装结构（20）包括：第一封装膜层（21）、位于所述第一封装膜层（21）一侧表面的第二封装膜层（22），以及形成于所述第一封装膜层（21）以及所述第二封装膜层（22）之间的散射粒子（23），所述散射粒子（23）用于对入射光形成散射。所述有机发光二极管封装方法、有机发光二极管封装结构（20）及发光二极管（100）在阴极封装膜层内形成所述散射粒子（23），所述散射粒子（23）可以对环境光或者杂散光形成散射作用，以降低阴极（10）对光线的反射，因此能够提高有机发光二极管（100）的对比度的清晰度。

Description

有机发光二极管封装结构、封装方法及有机发光二极管 技术领域
本发明涉及显示器领域，尤其涉及一种有机发光二极管封装结构、封装方法及具有所述有机发光二极管封装结构的有机发光二极管。
背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)一般由阴极，阳极和发光层组成。阴极一般采用Al等金属材料而阳极采用氧化铟锡(ITO)等材料。电子和空穴分别从阴极和阳极注入，在有机发光层形成激子并激发发光层材料发光。
由于现行多数OLED采用阳极发光结构，阴极成为反射层，导致环境光或内部杂散光在射到阴极后发生反射，尤其是阴极多数为金属，反射率较高，从而降低了OLED的对比度和清晰度。
发明内容
有鉴于此，有必要提供一种有助于改善对比度和清晰度的有机发光二极管封装结构、封装方法及有机发光二极管。
一种有机发光二极管封装结构，包括：
第一封装膜层；
位于所述第一封装一侧表面的第二封装膜层；以及
形成于所述第一封装膜层以及所述第二封装膜层之间的散射粒子，所述散射粒子用于对入射光形成散射。
进一步地，所述第一封装膜层为聚合物薄膜。
进一步地，所述第一封装膜层的材料选自为氟化聚合物、聚对二甲苯、甲基环戊烯醇酮以及聚丙烯酸酯中的一种。
进一步地，所述第二封装膜层的材料为陶瓷。
进一步地，所述扩散粒子为球形微粒，半球形微粒、椭球形微粒或者弧形微粒。
一种有机发光二极管，其中包括阴极以及如上所述的有机发光二极管封装结构，所述有机发光二级管形成于所述阴极表面。
进一步地，所述阴极的材料选自铝、银、锂、镁、铟中的一种或者几种的组合。
一种有机发光二极管封装方法，包括步骤：
于有机发光二极管的阴极表面形成第一封装膜层；
于所述第一封装层表面形成散射粒子；以及
于所述第一封装膜层表面形成覆盖所述散射粒子的第二封装膜层。
进一步地，所述散射粒子采用如下方式中的任意一种形成：
以快速成膜法破坏所述第一封装膜层的成膜质量，使所述第一封装层表面出现岛状结构，以形成所述散射粒子；
对所述所述第一封装膜层进行多点加热，每个加热点的位置对应一个散射粒子，使加热点附近的材料收缩至对应加热点以形成所述散射粒子；
以制备球形化无机纳米颗粒形式的散射粒子的方式，再所述散射粒子混入溶剂中，以所述溶剂涂敷所述第一封装膜层表面，最后通过烘烤等将溶剂蒸发，所述散射粒子即形成于所述第一封装膜层表面；
以掩膜板在所述第一封装膜层表面蚀刻形成所述散射粒子。
相对于现有技术，所述有机发光二极管封装方法、封装结构及发光二极管在阴极封装膜层内形成所述散射粒子，所述散射粒子，可以对环境光或者杂散光形成散射作用，以降低所述阴极对光线的反射，因此能够提高有机发光二极管的对比度的清晰度。
附图说明
图1为本发明实施方式的有机发光二极管的结构示意图。
图2为图1的有机发光二极管的第一封装膜层的俯视图。
图3为本发明实施方式的有机发光二极管封装方法流程图。
具体实施例
下面，将结合附图对本发明各实施例作详细介绍。
请参阅图1，所示为本发明实施方式的有机发光二极管100的示意图，图示中的有机发光二极管100包括阴极10以及形成于所述阴极10表面的封装结构20。应当理解，图1仅为示意性目的，除了所述阴极10以及所述封装结构20外，所述发光二极管100还包括但不限于阳极以及位于所述阴极10以及所述阳极之间的发光层。所述阳极一般采用氧化铟锡(ITO)材料。所述发光层为有机材料层，例如高分子聚合物。在所述阳极和所述阴极10之间施加预定电压后，所述发光层发光，依据所述发光层的材料组成的不同，可以控制所述发光层产生RGB三原色的光。本实施方式中，所述有机发光二极管100为顶发射(Top Emission)有机发光二极管。
所述阴极10为金属材料层，具体地，所述阴极10可以为铝(Al)、银(Ag)、锂(Li)、镁(Mg)、铟(In)等中的一种或者几种的合金。
所述封装结构20用于密封所述有机发光二极管100，防止所述有机发光二极管100因受到水、气及其他杂质影响而性能降低或者损坏。
所述封装结构20为透光结构，其包括第一封装膜层21、第二封装膜层22以及位于所述第一封装膜层21以及所述第二封装膜层22之间的扩散粒子23。
所述第一封装膜层21形成于阴极10的表面，本实施方式中，所述第一封装膜层21为聚合物薄膜，具体地，所述第一封装膜层21的材料可以为氟化聚合物(Fluorinated Polymers)、聚对二甲苯(Parylene)、甲基环戊烯醇酮(Cyclotene)以及聚丙烯酸酯(Polyacrylates)等中的一种。
所述第二封装膜层22形成于所述第一封装膜层21背离所述阴极10的一侧表面。所述第二封装膜层22的材料可以与所述第一封装膜层21的材料相同，也可以与所述第一封装膜层21的材料不同。本实施方式中，所述第二封装膜层22的材料为陶瓷。
所述扩散粒子23用于改变入射光的方向，以形成对入射光的散射。所述扩散粒子23可以形成于所述第一封装膜层21上，也可以形成于所述第二封装膜层22上。本实施方式中，所述扩散粒子23形成于所述第一封装膜层21上，所述扩散粒子23的材料与所述第一封装膜层21的材料相同。请同时参阅图2，所述扩散 粒子23大致为球形微粒，所述扩散粒子23大致均匀分布于所述第一封装膜层21表面。可以理解，在其他的实施方式中，所述扩散粒子23的形状可以为半球形、椭球形或者弧形；所述扩散粒子23的分布方式可以依据需要为规则的或者不规则的。
由于所述散射粒子23的存在，可以对环境光或者杂散光形成散射作用，以降低所述阴极对光线的反射，因此能够提高有机发光二极管100的对比度的清晰度。
请参阅图3，图示为本发明实施方式的有机发光二极管封装方法的流程图，该方法用于形成上述的封装结构20，其包括如下步骤：
S01，于有机发光二极管的阴极表面形成第一封装膜层。
所述第一封装膜层可以采用物理气相沉积法(Physical Vapor Deposition，PVD)、化学气相沉积法(Chemical Vapor Deposition，CVD)、原子层沉积法(Atomic Layer Deposition，ALD)或者其他任意适合的方法形成于所述有机发光二极管表面。
具体地，本实施方式中，所述有机发光二极管置入真空室中，将所述第一封装膜层材料的母液快速蒸发到气体中，将所述气体导入所述真空室，使所述气体以液体形式凝聚在所述有机发光二极管的阴极表面；固化所述阴极表面的液体凝聚物，形成固态膜层，即所述第一封装膜层。所述固化可以采用紫外线照射固化。所述母液材料可以为氟化聚合物(Fluorinated Polymers)、聚对二甲苯(Parylene)、甲基环戊烯醇酮(Cyclotene)以及聚丙烯酸酯(Polyacrylates)等中的一种。
S02，于所述第一封装层表面形成散射粒子。
具体地，所述散射粒子可以采用如下方法中的一种：
以快速成膜法破坏所述第一封装膜层的成膜质量，使所述第一封装层表面出现岛状结构，以形成所述散射粒子；
对所述所述第一封装膜层进行多点加热，每个加热点的位置对应一个散射粒子，使加热点附近的材料收缩至对应加热点以形成所述散射粒子；
以制备球形化无机纳米颗粒形式的散射粒子的方式，再所述散射粒子混入溶剂中，以所述溶剂涂敷所述第一封装膜层表面，最后通过烘烤等将溶剂蒸发，所述散射粒子即形成于所述第一封装膜层表面；
以超高精细度的掩膜板在所述第一封装膜层表面蚀刻形成所述散射粒子。
S03，于所述第一封装膜层表面形成覆盖所述散射粒子的第二封装膜层。
所述第二封装膜层可以采用与所述第一封装膜层类似的材料及方法制作形成，也可以采用其他的合适的材料及方式形成。
本实施方式中，所述第二封装膜层的材料为陶瓷，其沉积于所述第一封装膜层表面。
所述有机发光二极管封装方法在阴极封装膜层内形成所述散射粒子，所述散射粒子，可以对环境光或者杂散光形成散射作用，以降低所述阴极对光线的反射，因此能够提高有机发光二极管的对比度的清晰度。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (13)

  1. 一种有机发光二极管封装结构，其中包括：
    第一封装膜层；
    位于所述第一封装一侧表面的第二封装膜层；以及
    形成于所述第一封装膜层以及所述第二封装膜层之间的散射粒子，所述散射粒子用于对入射光形成散射。
  2. 如权利要求1所述的发光二极管封装结构，其中：所述第一封装膜层为聚合物薄膜。
  3. 如权利要求1所述的发光二极管封装结构，其中：所述第一封装膜层的材料选自为氟化聚合物、聚对二甲苯、甲基环戊烯醇酮以及聚丙烯酸酯中的一种。
  4. 如权利要求1所述的发光二极管封装结构，其中：所述第二封装膜层的材料为陶瓷。
  5. 如权利要求1所述的发光二极管封装结构，其中：所述扩散粒子为球形微粒，半球形微粒、椭球形微粒或者弧形微粒。
  6. 一种有机发光二极管，其中包括阴极以及有机发光二极管封装结构，所述有机发光二级管形成于所述阴极表面；所述有机发光二极管封装结构，其中包括：
    第一封装膜层；
    位于所述第一封装一侧表面的第二封装膜层；以及
    形成于所述第一封装膜层以及所述第二封装膜层之间的散射粒子，所述散射粒子用于对入射光形成散射。
  7. 如权利要求6所述的有机发光二极管，其中：所述第一封装膜层为聚合物薄膜。
  8. 如权利要求6所述的发光二极管，其中：所述第一封装膜层的材料选自为氟化聚合物、聚对二甲苯、甲基环戊烯醇酮以及聚丙烯酸酯中的一种。
  9. 如权利要求6所述的发光二极管，其中：所述第二封装膜层的材料为陶瓷。
  10. 如权利要求6所述的发光二极管，其中：所述扩散粒子为球形微粒，半球形微粒、椭球形微粒或者弧形微粒。
  11. 如权利要求6所述的发光二极管，其中：所述阴极的材料选自铝、银、锂、镁、铟中的一种或者几种的组合。
  12. 一种有机发光二极管封装方法，其中步骤：
    于有机发光二极管的阴极表面形成第一封装膜层；
    于所述第一封装层表面形成散射粒子；以及
    于所述第一封装膜层表面形成覆盖所述散射粒子的第二封装膜层。
  13. 如权利要求12所述的发光二极管封装方法，其中：所述散射粒子采用如下方式中的任意一种形成：
    以快速成膜法破坏所述第一封装膜层的成膜质量，使所述第一封装层表面出现岛状结构，以形成所述散射粒子；
    对所述所述第一封装膜层进行多点加热，每个加热点的位置对应一个散射粒子，使加热点附近的材料收缩至对应加热点以形成所述散射粒子；
    以制备球形化无机纳米颗粒形式的散射粒子的方式，再所述散射粒子混入溶剂中，以所述溶剂涂敷所述第一封装膜层表面，最后通过烘烤等将溶剂蒸发，所述散射粒子即形成于所述第一封装膜层表面；
    以掩膜板在所述第一封装膜层表面蚀刻形成所述散射粒子。
PCT/CN2016/071543 2015-12-09 2016-01-21 有机发光二极管封装结构、封装方法及有机发光二极管 Ceased WO2017096696A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/914,656 US9905806B2 (en) 2015-12-09 2016-01-21 Encapsulation structures of OLED, encapsulation methods, and OLEDs

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510900239.9 2015-12-09
CN201510900239.9A CN105405982A (zh) 2015-12-09 2015-12-09 有机发光二极管封装结构、封装方法及有机发光二极管

Publications (1)

Publication Number Publication Date
WO2017096696A1 true WO2017096696A1 (zh) 2017-06-15

Family

ID=55471354

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/071543 Ceased WO2017096696A1 (zh) 2015-12-09 2016-01-21 有机发光二极管封装结构、封装方法及有机发光二极管

Country Status (3)

Country Link
US (1) US9905806B2 (zh)
CN (1) CN105405982A (zh)
WO (1) WO2017096696A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106129267B (zh) * 2016-08-02 2018-01-12 武汉华星光电技术有限公司 Oled薄膜封装结构及其制作方法
CN106098742A (zh) * 2016-08-18 2016-11-09 信利（惠州）智能显示有限公司 有机发光显示装置及制造方法
CN108735914A (zh) * 2018-05-30 2018-11-02 深圳市华星光电半导体显示技术有限公司 Oled显示器封装结构
CN109491159B (zh) * 2018-11-21 2022-02-08 厦门天马微电子有限公司 阵列基板和显示面板
CN112151567A (zh) * 2019-06-28 2020-12-29 成都辰显光电有限公司 显示面板、显示装置及显示面板的制备方法
CN110265581B (zh) * 2019-07-22 2022-10-04 广州国显科技有限公司 显示面板及显示装置
KR102656085B1 (ko) 2021-09-30 2024-04-11 한국전자통신연구원 퀀텀닷 유기발광다이오드

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7952105B2 (en) * 2007-01-29 2011-05-31 Global Oled Technology, Llc. Light-emitting display device having improved efficiency
US20120155093A1 (en) * 2010-12-20 2012-06-21 Samsung Electronics Co., Ltd. Substrate for surface light emitting device and method of manufacturing the substrate, surface light emitting device, lighting apparatus, and backlight including the same
CN103650196A (zh) * 2011-07-12 2014-03-19 欧司朗光电半导体有限公司 有机发光器件和用于制造有机发光器件的方法
CN104040750A (zh) * 2012-01-04 2014-09-10 欧司朗光电半导体有限公司 发射辐射的有机构件

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2005115740A1 (ja) * 2004-05-26 2008-03-27 日産化学工業株式会社 面発光体
US7602118B2 (en) * 2005-02-24 2009-10-13 Eastman Kodak Company OLED device having improved light output
US7508130B2 (en) * 2005-11-18 2009-03-24 Eastman Kodak Company OLED device having improved light output
US8174187B2 (en) * 2007-01-15 2012-05-08 Global Oled Technology Llc Light-emitting device having improved light output
US7560747B2 (en) * 2007-05-01 2009-07-14 Eastman Kodak Company Light-emitting device having improved light output
US9172057B2 (en) * 2011-06-30 2015-10-27 Osram Oled Gmbh Encapsulation structure for an opto-electronic component
DE102011079063A1 (de) * 2011-07-13 2013-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement und Verfahren zum Herstellen eines lichtemittierenden Bauelements
DE102011084276B4 (de) * 2011-10-11 2019-10-10 Osram Oled Gmbh Verkapselung für ein organisches elektronisches bauelement, ein organisches elektronisches bauelement mit der verkapselung und ein verfahren zur herstellung eines organischen elektronischen bauelements mit der verkapselung
EP2766939B1 (en) * 2011-10-13 2019-04-24 Cambrios Film Solutions Corporation Oled with electrode incorporating metal nanowires
KR101353434B1 (ko) * 2011-10-17 2014-01-21 주식회사 엘지화학 유기전자소자용 기판
KR20130108026A (ko) * 2012-03-23 2013-10-02 주식회사 엘지화학 유기발광소자
KR20130108027A (ko) * 2012-03-23 2013-10-02 주식회사 엘지화학 유기전자소자용 기판의 제조방법
JP6044010B2 (ja) * 2012-07-31 2016-12-14 エルジー・ケム・リミテッド 有機電子素子用基板
CN103633251B (zh) * 2012-08-29 2016-12-21 固安翌光科技有限公司 光取出部件及应用其的有机电致发光器件及制备方法
DE102012109258B4 (de) * 2012-09-28 2020-02-06 Osram Oled Gmbh Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelementes
CN103943785A (zh) * 2013-06-18 2014-07-23 厦门天马微电子有限公司 光学调节膜及其制造方法
CN104362171A (zh) * 2014-12-03 2015-02-18 京东方科技集团股份有限公司 一种有机电致发光显示面板、其制作方法及显示装置
KR102297423B1 (ko) * 2015-09-01 2021-09-06 삼성디스플레이 주식회사 유기 발광 표시 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7952105B2 (en) * 2007-01-29 2011-05-31 Global Oled Technology, Llc. Light-emitting display device having improved efficiency
US20120155093A1 (en) * 2010-12-20 2012-06-21 Samsung Electronics Co., Ltd. Substrate for surface light emitting device and method of manufacturing the substrate, surface light emitting device, lighting apparatus, and backlight including the same
CN103650196A (zh) * 2011-07-12 2014-03-19 欧司朗光电半导体有限公司 有机发光器件和用于制造有机发光器件的方法
CN104040750A (zh) * 2012-01-04 2014-09-10 欧司朗光电半导体有限公司 发射辐射的有机构件

Also Published As

Publication number Publication date
US9905806B2 (en) 2018-02-27
CN105405982A (zh) 2016-03-16
US20180034004A1 (en) 2018-02-01

Similar Documents

Publication Publication Date Title
WO2017096696A1 (zh) 有机发光二极管封装结构、封装方法及有机发光二极管
TWI711176B (zh) 有機發光顯示裝置及其製造方法
Eom et al. Close-packed hemispherical microlens arrays for light extraction enhancement in organic light-emitting devices
CN106025092B (zh) 有机电致发光器件及其制备方法、显示装置
CN104241535B (zh) 一种有机发光结构
CN105470408B (zh) 用于打印成膜工艺的凹槽结构及其制作方法
US10079367B2 (en) Waterproof and anti-reflective flexible OLED apparatus and method for manufacturing the same
WO2014201759A1 (zh) 有机电致发光器件封装盖板、有机电致发光器件及显示器
US20180233701A1 (en) Oled packaging method and oled packaging structure
WO2016155437A1 (zh) 有机发光显示面板和显示装置
WO2018094801A1 (zh) Oled显示装置及其制作方法
WO2016004709A1 (zh) Oled显示器及其制备方法
CN105449121A (zh) Oled器件的封装方法、oled封装器件及显示装置
JPWO2015145533A1 (ja) 発光装置及び発光装置の製造方法
CN104319351A (zh) Oled阵列基板及其制备方法、显示面板、显示装置
CN107195799A (zh) 有机发光显示面板和显示装置
JP2013118171A (ja) 有機発光表示装置及びその製造方法
WO2015192480A1 (zh) 有机水氧阻隔材料、oled显示装置及其制备方法
CN106058068B (zh) 有机发光二极管和显示基板及其制作方法、显示器件
CN106848024A (zh) 发光器件及显示装置
CN106910837A (zh) 有机电致发光器件及其制备方法、显示装置
CN107154422B (zh) 一种柔性有机发光二极管显示器及其制作方法
US10693046B2 (en) Chip scale packaging light emitting device and manufacturing method of the same
WO2021027171A1 (zh) 一种柔性显示面板及其制备方法
JP2017532722A (ja) 発光デバイス

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 14914656

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16871907

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16871907

Country of ref document: EP

Kind code of ref document: A1