WO2017094568A1 - 半導体装置の製造装置及び製造方法 - Google Patents
半導体装置の製造装置及び製造方法 Download PDFInfo
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- WO2017094568A1 WO2017094568A1 PCT/JP2016/084655 JP2016084655W WO2017094568A1 WO 2017094568 A1 WO2017094568 A1 WO 2017094568A1 JP 2016084655 W JP2016084655 W JP 2016084655W WO 2017094568 A1 WO2017094568 A1 WO 2017094568A1
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/005—Contacting devices
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/007—Current directing devices
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/615—Microstructure of the layers, e.g. mixed structure
- C25D5/617—Crystalline layers
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
Definitions
- the present invention relates to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method using the manufacturing apparatus.
- electrolytic treatment such as plating or etching is performed.
- a plating process for a semiconductor wafer is performed by a plating apparatus described in Patent Document 1, for example.
- the semiconductor wafer disposed facing the anode electrode is disposed such that the plating treatment surface faces downward.
- the support part which supports a semiconductor wafer comprises the cathode electrode connected to the said semiconductor wafer. Then, the plating treatment of the semiconductor wafer is performed by jetting a plating solution through the anode electrode toward the plating treatment surface of the semiconductor wafer.
- the plating apparatus described in Patent Document 1 is provided with an ultrasonic vibrator, and the plating liquid is stirred by transmitting ultrasonic waves oscillated from the ultrasonic vibrator to the plating liquid. As a result, the uniformity of the plating process is improved.
- the present invention has been made in view of such a point, and an object thereof is to efficiently manufacture a semiconductor device.
- one embodiment of the present invention is a semiconductor device manufacturing apparatus, which includes a substrate holding portion that holds a substrate, and a processing liquid that supplies the processing liquid to the substrate held by the substrate holding portion.
- a supply unit an electrolytic treatment unit that is disposed to face the substrate holding unit and performs an electrolytic treatment on the substrate held by the substrate holding unit, and a terminal for applying a voltage to the substrate,
- the electrolytic processing unit is in contact with the processing liquid supplied to the substrate, and a direct electrode for applying a voltage between the substrate and an indirect electrode for forming an electric field in the processing liquid supplied to the substrate.
- the ion to be treated contained in the treatment liquid is a cation
- a voltage is applied to the indirect electrode to form an electric field (electrostatic field) on the treatment liquid
- negative charge is applied to the electrolytic treatment part (indirect electrode and direct electrode) Particles gather and ions to be processed move to the substrate side.
- a voltage is applied with the direct electrode as the anode and the substrate as the cathode, and a current flows directly between the electrode and the substrate. Then, the charges of the ions to be processed that have moved to the substrate side are exchanged, and the ions to be processed are reduced.
- the ions to be processed are negative ions
- a voltage is applied to the indirect electrode to form an electric field in the processing liquid
- the ions to be processed move to the substrate side.
- a voltage is applied using the direct electrode as a cathode and the substrate as an anode, and a current flows directly between the electrode and the substrate. Then, the charges of the ions to be processed that have moved to the substrate side are exchanged, and the ions to be processed are oxidized.
- movement of ions to be processed by the indirect electrode and oxidation or reduction of the ions to be processed by the direct electrode and the substrate are performed separately.
- the ions to be processed can be oxidized and reduced in a state where sufficient ions to be processed are uniformly accumulated on the surface of the substrate. For this reason, the electrolytic treatment can be uniformly performed on the surface of the substrate.
- the apparatus configuration can be simplified. Therefore, the semiconductor device can be manufactured efficiently and appropriately.
- Another aspect of the present invention is a semiconductor device manufacturing apparatus, a substrate holding unit that holds a substrate, a processing liquid supply unit that supplies a processing liquid to the substrate held by the substrate holding unit, An electrolytic processing unit that is disposed opposite to the substrate holding unit and that performs an electrolytic process on the substrate held by the substrate holding unit; and a terminal for applying a voltage to the substrate.
- a main body made of an insulator and a surface provided on the surface of the main body, contacting the treatment liquid supplied to the substrate, applying a voltage between the substrate and the treatment liquid supplied to the substrate;
- Another embodiment of the present invention is a method for manufacturing a semiconductor device, wherein a substrate holding portion that holds a substrate and an electrolytic treatment portion that performs electrolytic treatment on the substrate held by the substrate holding portion are opposed to each other.
- a first step of placing a second step of supplying a processing liquid to the substrate held by the substrate holding unit by the processing liquid supply unit, and a terminal for applying a voltage to the substrate in contact with the substrate And applying a voltage to the indirect electrode provided in the electrolytic treatment section to form an electric field in the treatment liquid by applying a voltage to the indirect electrode provided in the electrolytic treatment section.
- Another embodiment of the present invention is a method for manufacturing a semiconductor device, wherein a substrate holding portion that holds a substrate and an electrolytic treatment portion that performs electrolytic treatment on the substrate held by the substrate holding portion are opposed to each other.
- a first step of placing a second step of supplying a processing liquid to the substrate held by the substrate holding unit by the processing liquid supply unit, and a terminal for applying a voltage to the substrate in contact with the substrate
- a fifth step of oxidizing or reducing the ions to be processed that have moved to the substrate side by applying a voltage between the common electrode and the substrate.
- the electrolytic treatment section is a main body made of an insulator. Further comprising a, the common electrode is provided on the surface of the body portion, the common electrode, the capacitor is connected via the wiring.
- a semiconductor device can be manufactured efficiently and appropriately.
- FIG. 1 is an explanatory diagram showing an outline of a configuration of a semiconductor device manufacturing apparatus 1 according to the present embodiment.
- a plating process is performed as an electrolytic process on a semiconductor wafer W (hereinafter referred to as “wafer W”) as a substrate.
- a seed layer (not shown) used as an electrode is formed on the surface of the wafer W.
- the dimensions of each component do not necessarily correspond to the actual dimensions in order to prioritize easy understanding of the technology.
- the manufacturing apparatus 1 has a wafer holding unit 10 as a substrate holding unit.
- the wafer holding unit 10 is a spin chuck that holds and rotates the wafer W.
- the wafer holder 10 has a surface 10a having a diameter larger than the diameter of the wafer W in plan view, and a suction port (not shown) for sucking the wafer W is provided on the surface 10a, for example. By suction from this suction port, the wafer W can be sucked and held on the wafer holder 10.
- the wafer holding unit 10 is provided with a drive mechanism 11 including, for example, a motor, and can be rotated at a predetermined speed by the drive mechanism 11. Further, the drive mechanism 11 is provided with a lifting drive source such as a cylinder, and the wafer holding unit 10 is movable in the vertical direction. In the present embodiment, the drive mechanism 11 constitutes the rotation mechanism and the movement mechanism in the present invention.
- An electrolytic processing unit 20 is provided above the wafer holding unit 10 so as to face the wafer holding unit 10.
- the electrolytic treatment unit 20 has a main body 21 made of an insulator.
- the main body 21 has a surface 21a having a diameter larger than the diameter of the wafer W in plan view.
- the main body 21 is provided with a terminal 22, a direct electrode 23, and an indirect electrode 24.
- the terminal 22 is held by the main body 21 and is provided so as to protrude from the surface 21 a of the main body 21.
- the terminal 22 has elasticity. When the plating process is performed, the terminal 22 contacts the wafer W (seed layer) and applies a voltage to the wafer W as described later.
- the number of terminals 22 is not particularly limited, for example, eight terminals are provided in the present embodiment. Further, the terminal 22 is not necessarily provided in the main body portion 21 and may be provided separately from the electrolytic treatment portion 20.
- the direct electrode 23 is provided on the surface 21 a of the main body 21. When performing the plating process, the direct electrode 23 comes into contact with the plating solution on the wafer W as described later.
- the indirect electrode 24 is provided inside the main body 21. That is, the indirect electrode 24 is not exposed to the outside.
- a DC power supply 30 is connected to the terminal 22, the direct electrode 23, and the indirect electrode 24.
- the terminal 22 is connected to the negative electrode side of the DC power supply 30.
- the direct electrode 23 and the indirect electrode 24 are each connected to the positive electrode side of the DC power supply 30.
- a switch 31 for switching the connection state between the direct electrode 23 and the DC power supply 30 is provided between the direct electrode 23 and the DC power supply 30. The on / off of the switch 31 is controlled by the control unit 50 described later.
- the switch 31 is on, the direct electrode 23 and the DC power supply 30 are connected, and a current flows between the direct electrode 23 and the terminal 22.
- the switch 31 is off, the direct electrode 23 and the DC power supply 30 are disconnected, and no current flows between the direct electrode 23 and the terminal 22.
- a nozzle 40 as a treatment liquid supply part for supplying a plating liquid as a treatment liquid onto the wafer W is provided.
- the nozzle 40 is movable in a horizontal direction and a vertical direction by a nozzle moving mechanism 41 and is configured to be movable forward and backward with respect to the wafer holding unit 10.
- the nozzle 40 communicates with a plating solution supply source (not shown) that stores the plating solution, and the plating solution is supplied to the nozzle 40 from the plating solution supply source.
- a plating solution supply source (not shown) that stores the plating solution, and the plating solution is supplied to the nozzle 40 from the plating solution supply source.
- the plating solution for example, a mixed solution in which copper sulfate and sulfuric acid are dissolved is used, and the plating solution contains copper ions as ions to be processed.
- the nozzle 40 is used as the processing liquid supply unit, but various other means can be used as a mechanism for supplying the plating liquid.
- a cup (not shown) for receiving and collecting the liquid scattered or dropped from the wafer W may be provided around the wafer holding unit 10.
- the above manufacturing apparatus 1 is provided with a control unit 50.
- the control unit 50 is, for example, a computer and has a program storage unit (not shown).
- the program storage unit stores a program for controlling the processing of the wafer W in the manufacturing apparatus 1.
- the program is recorded on a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), or memory card. It may be installed in the control unit 50 from the storage medium.
- the nozzle 40 is moved by the nozzle moving mechanism 41 to above the center of the wafer W held by the wafer holding unit 10. .
- the distance between the surface 10a of the wafer holding part 10 and the surface 21a of the main body part 21 of the electrolytic treatment part 20 is about 100 mm.
- the plating solution M is supplied from the nozzle 40 to the center of the wafer W while rotating the wafer W by the drive mechanism 11.
- the supplied plating solution M is diffused over the entire surface of the wafer W by centrifugal force.
- the plating solution M is uniformly diffused within the wafer surface.
- the supply of the plating solution M from the nozzle 40 is stopped and the rotation of the wafer W is stopped, the plating solution M stays on the wafer W due to the surface tension of the plating solution M, and a liquid paddle with a uniform film thickness is formed.
- the wafer holding unit 10 is raised by the drive mechanism 11.
- the distance between the surface 10a of the wafer holding part 10 and the surface 21a of the main body part 21 of the electrolytic treatment part 20 is about 1 mm.
- the terminal 22 is brought into contact with the wafer W, and the electrode 23 is brought into contact with the plating solution M on the wafer W directly.
- the distance between the surfaces 10a and 21a in the plating solution M can be adjusted by adjusting the height of the terminal 22.
- a predetermined load for example, 80 g, is applied to each terminal 22 to form an electrical contact between the terminal 22 and the wafer W.
- a direct current voltage is continuously applied between the indirect electrode 24 and the wafer W, and a direct current voltage is applied between the direct electrode 23 and the wafer W in the form of a pulse. To do. At this time, the pulse voltage is controlled for each of the eight terminals 22.
- an indirect electrode 24 is used as an anode and a wafer W is used as a cathode to apply a DC voltage to form an electric field (electrostatic field). Then, sulfate ions S, which are negatively charged particles, gather on the surface (indirect electrode 24 and direct electrode 23) side of the electrolytic processing unit 20, and copper ions C, which are positively charged particles, move to the surface side of the wafer W.
- the electrode 31 is directly in an electrically floating state by keeping the switch 31 in an OFF state.
- charge exchange is not performed on either the surface of the electrolytic processing unit 20 or the wafer W, so that charged particles attracted by the electrostatic field are arranged on the electrode surface.
- the copper ions C are evenly arranged on the surface of the wafer W. Since the charge exchange of the copper ions C is not performed on the surface of the wafer W and the electrolysis of water is suppressed, the electric field when applying a voltage between the indirect electrode 24 and the wafer W can be increased. And the movement of the copper ion C can be accelerated by this high electric field, and the plating rate of a plating process can be improved. Furthermore, by arbitrarily controlling the electric field, the copper ions C arranged on the surface of the wafer W are also arbitrarily controlled.
- the direct electrode 23 in order to avoid the direct electrode 23 becoming a cathode, the direct electrode 23 is not connected to the ground but is in an electrically floating state.
- the switch 31 is turned on as shown in FIG. A voltage is applied using the direct electrode 23 as an anode and the wafer W as a cathode, and a current flows between the direct electrode 23 and the wafer W. Then, charge exchange with the copper ions C arranged uniformly on the surface of the wafer W is performed, the copper ions C are reduced, and the copper plating 60 is deposited on the surface of the wafer W. At this time, the sulfate ions S are directly oxidized by the electrode 23.
- the copper plating 60 can be uniformly deposited on the surface of the wafer W. As a result, the density of crystals in the copper plating 60 is increased, and a high-quality copper plating 60 can be formed. Further, since the reduction is performed in a state where the copper ions C are uniformly arranged on the surface of the wafer W, the copper plating 60 can be generated uniformly and with high quality.
- the supply of the plating solution M from the nozzle 40, the movement of the copper ions C by the indirect electrode 24, and the reduction of the copper ions C by the direct electrode 23 and the wafer W are repeatedly performed, so that the copper plating 60 becomes a predetermined film. It grows to a thickness of about 5 ⁇ m. Thus, a series of plating processes in the manufacturing apparatus 1 is completed.
- the movement of the copper ions C by the indirect electrode 24 and the reduction of the copper ions C by the direct electrode 23 and the wafer W are performed separately, sufficient copper ions C are uniformly formed on the surface of the wafer W.
- the copper ions C can be reduced in a state of being accumulated in the metal. For this reason, the plating process can be uniformly performed on the surface of the wafer W.
- the apparatus configuration can be simplified. Therefore, the semiconductor device can be manufactured efficiently and appropriately.
- the film thickness of the plating solution M on the wafer W can be made uniform in the wafer surface. For this reason, the plating process can be performed more uniformly on the surface of the wafer W. Even if the wafer W does not rotate, the plating solution M diffuses on the wafer W due to surface tension. However, by rotating the wafer W as in the present embodiment, the film thickness of the plating solution M is made more uniform. It can be done.
- the wafer holding unit 10 is raised by the drive mechanism 11 to bring the terminal 22 into contact with the wafer W, and the electrode 23 directly into contact with the plating solution M on the wafer W. .
- the position of the terminal 22, the direct electrode 23, and the indirect electrode 24 can be adjusted simultaneously, and a series of processing can be performed efficiently.
- the wafer W can be used as a cathode only by bringing the terminal 22 into contact with the wafer W. Therefore, when the wafer W is rotated, there is nothing that inhibits the rotation. Can be easily performed.
- the film thickness of the copper plating 60 can be adjusted.
- the supply of the plating solution M, the transfer and accumulation of the copper ions C, and the reduction of the copper ions C are repeated, but these are performed once by adjusting the film thickness of the plating solution M.
- a copper plating 60 having a predetermined thickness can be formed.
- the film thickness of the copper plating 60 is adjusted, the film thickness of the plating solution M can be kept small, so that the usage efficiency of the plating solution M is high and the amount of the plating solution M used can be suppressed.
- various liquid treatments are performed before and after the plating treatment.
- a cleaning liquid such as DIW or IPA is supplied onto the wafer.
- the cleaning solution can be spun off by rotating the wafer W as in the present embodiment. Therefore, rotating the wafer W is effective for replacing the processing liquid on the wafer W.
- the switch 31 directly switches the connection state between the electrode 23 and the DC power supply 30, but the configuration of the switch is not limited to this.
- the switch 100 may be provided on the indirect electrode 24.
- the switch 100 switches the connection between the indirect electrode 24 and the DC power supply 30 and the connection between the indirect electrode 24 and the direct electrode 23. Switching of the switch 100 is controlled by the control unit 50.
- the other structure of the manufacturing apparatus 1 shown in FIG. 7 is the same as the other structure of the manufacturing apparatus 1 shown in FIG.
- a liquid paddle of the plating solution M is formed on the wafer W, the terminal 22 is brought into contact with the wafer W, and the electrode 23 is directly brought into contact with the plating solution M on the wafer W.
- the indirect electrode 24 and the DC power source 30 are connected by the switch 100.
- a DC voltage is applied with the indirect electrode 24 as an anode and the wafer W as a cathode to form an electric field (electrostatic field).
- an electric field electrostatic field
- the direct electrode 23 In order to avoid the direct electrode 23 from becoming a cathode, the direct electrode 23 is not connected to the ground but is in an electrically floating state. In such a situation, since charge exchange is not performed on the surface of either the direct electrode 23 or the wafer W, charged particles attracted by the electrostatic field are arranged on the electrode surface.
- connection of the indirect electrode 24 and the DC power source 30 by the switch 100 is performed until sufficient charge is accumulated in the indirect electrode 24 and the wafer W, that is, until the battery is fully charged. Then, copper ions C are uniformly arranged on the surface of the wafer W. Since the charge exchange of the copper ions C is not performed on the surface of the wafer W and the electrolysis of water is suppressed, the electric field when applying a voltage between the indirect electrode 24 and the wafer W can be increased. And the movement of the copper ion C can be accelerated by this high electric field. Furthermore, by arbitrarily controlling the electric field, the copper ions C arranged on the surface of the wafer W are also arbitrarily controlled.
- the switch 100 is switched, the connection between the indirect electrode 24 and the DC power supply 30 is disconnected, and the indirect electrode 24 and the direct electrode 23 are connected. Then, the positive charge accumulated in the indirect electrode 24 moves directly to the electrode 23, the charge of the sulfate ions S collected on the surface side of the electrolytic processing unit 20 is exchanged, and the sulfate ions S are oxidized. Along with this, the electric charges of the copper ions C arranged on the surface of the wafer W are exchanged, and the copper ions C are reduced. Then, the copper plating 60 is deposited on the surface of the wafer W. In the following description, the state in which the indirect electrode 24 and the direct electrode 23 are connected by the switch 100 and the charge is transferred from the indirect electrode 24 may be referred to as “discharge”.
- the copper plating 60 can be uniformly deposited on the surface of the wafer W. As a result, the density of crystals in the copper plating 60 is increased, and a high-quality copper plating 60 can be formed. Further, since the reduction is performed in a state where the copper ions C are uniformly arranged on the surface of the wafer W, the copper plating 60 can be generated uniformly and with high quality.
- the copper plating 60 has a predetermined film thickness of about 5 ⁇ m. To grow. Thus, a series of plating processes in the manufacturing apparatus 1 is completed.
- the same effect as the above embodiment can be enjoyed. That is, the plating process can be uniformly performed on the surface of the wafer W using the manufacturing apparatus 1 having a simple configuration.
- a plurality of indirect electrodes 24 may be stacked inside the main body 21.
- the indirect electrode 24 can be stacked by various methods. As shown in FIG. 11A, the independent indirect electrode 24 may be provided in a plurality of layers, or as shown in FIG. 11B, the indirect electrode 24 may be provided in a comb shape. As shown in FIG. 11C, two comb-shaped indirect electrodes 24 may be provided alternately.
- the capacity of the indirect electrode 24 can be increased.
- the concentration of copper ions C accumulated on the surface of the wafer W can be increased.
- the charge exchange of the copper ions C can be performed in a state where sufficient copper ions C are accumulated on the surface of the wafer W, whereby the rate of the plating process can be improved.
- the uniformity of the plating process can also be improved.
- the switch 100 shown in FIG. 7 may be used instead of the switch 31.
- the main body 21 of the electrolytic treatment unit 20 shown in FIG. 1 is provided with the terminal 22, the direct electrode 23, and the indirect electrode 24. Instead, the main body 21 has a terminal 110 as shown in FIG.
- the common electrode 111 and the capacitor 112 may be provided.
- the terminal 110 has the same configuration as the terminal 22, that is, is held by the main body portion 21 and is provided so as to protrude from the surface 21 a of the main body portion 21.
- the terminal 110 has elasticity.
- the common electrode 111 is provided on the surface 21 a of the main body 21. When performing the plating process, the common electrode 111 is in contact with the plating solution M on the wafer W.
- the common electrode 111 has the function of the direct electrode 23 and the function of the indirect electrode 24 in the above embodiment.
- a DC power source 120 is connected to the terminal 110 and the common electrode 111.
- the terminal 110 is connected to the negative electrode side of the DC power source 120.
- the common electrode 111 is connected to the positive electrode side of the DC power source 120.
- the first wiring 121 and the second wiring 122 are connected to the common electrode 111.
- a capacitor 112 is provided on the first wiring 121.
- the capacitor 112 may be provided inside the main body 21 that is an insulator, or may be provided outside the main body 21 so as to be covered with an insulator.
- a switch 123 is provided in the second wiring 122. On / off of the switch 123 is controlled by the control unit 50.
- a liquid paddle of the plating solution M is formed on the wafer W, the terminal 110 is brought into contact with the wafer W, and the common electrode 111 is brought into contact with the plating solution M on the wafer W.
- a predetermined load for example, 7 kg, is applied to each terminal 110 to form an electrical contact between the terminal 110 and the wafer W.
- a DC voltage is continuously applied between the common electrode 111 and the wafer W via the first wiring 121 and the terminal 110, while the second wiring 122 and the terminal 110 are connected. Then, a so-called pulse voltage is applied between the common electrode 111 and the wafer W so as to apply a DC voltage in a pulsed manner.
- a DC voltage is continuously applied between the common electrode 111 and the wafer W via the first wiring 121 and the terminal 110, and the capacitor 112 is charged. That is, positive charges are accumulated on the common electrode 111 side of the capacitor 112, and negative charges are accumulated on the DC power source 120 side of the capacitor 112. Then, an electric field (electrostatic field) is formed in the plating solution M. Then, positive charges are accumulated in the common electrode 111, and sulfate ions S that are negatively charged particles are collected on the common electrode 111 side. On the other hand, negative charges are accumulated on the wafer W, and copper ions C, which are positively charged particles, move to the wafer W side.
- the switch 123 is turned on as shown in FIG.
- a DC voltage is applied in a pulsed manner between the common electrode 111 and the wafer W via the second wiring 122 and the terminal 110, and the common electrode 111 is used as an anode and a voltage is applied using the wafer W as a cathode.
- a current is passed between the electrode 111 and the wafer W.
- the positive charge accumulated on the common electrode 111 side of the capacitor 112 is moved to the common electrode 111 and the charges of the sulfate ions S collected on the common electrode 111 side are exchanged. Oxidized.
- the electric charges of the copper ions C arranged on the surface of the wafer W are exchanged, and the copper ions C are reduced.
- the copper plating 60 is deposited on the surface of the wafer W.
- the copper plating 60 can be uniformly deposited on the surface of the wafer W. As a result, the density of crystals in the copper plating 60 is increased, and a high-quality copper plating 60 can be formed. Further, since the reduction is performed in a state where the copper ions C are uniformly arranged on the surface of the wafer W, the copper plating 60 can be generated uniformly and with high quality.
- the supply of the plating solution M from the nozzle 40, the transfer accumulation of the copper ions C at the time of charging, and the reduction of the copper ions C at the time of discharging are repeatedly performed so that the copper plating 60 has a predetermined film thickness, for example, about Grows to 5 ⁇ m.
- a series of plating processes in the manufacturing apparatus 1 is completed.
- the same effect as the above embodiment can be enjoyed. That is, the plating process can be uniformly performed on the surface of the wafer W using the manufacturing apparatus 1 having a simple configuration. Further, by increasing the capacity of the capacitor 112, the concentration of copper ions C accumulated on the surface of the wafer W can be increased, the rate of the plating process can be improved, and the uniformity of the plating process is also improved. Can be made.
- a plurality of, for example, 700 circuits each including the terminal 110, the common electrode 111, the capacitor 112, the DC power source 120, the wirings 121 and 122, and the switch 123 are provided. Also good.
- the number of circuits corresponds to the number of chips formed on the wafer W. That is, the terminal 110 contacts the wafer W during the plating process, but contacts the seed layer of each chip.
- a plurality of common electrodes 111 and capacitors 112 may be provided. That is, a plurality of common electrodes 111 and capacitors 112 may be provided for one terminal 110.
- the capacitor 112 may be provided inside the main body 21 that is an insulator, or may be provided outside the main body 21 so as to be covered with an insulator.
- the capacity of the capacitor 112 can be further increased. If it does so, the density
- a plurality of the circuits are provided for each chip of the wafer W, but the voltage applied to each circuit may be controlled. For example, by controlling so that different voltages are applied to the central portion and the outer peripheral portion of the wafer W, the plating process can be made uniform within the wafer surface. And the film thickness of the copper plating 60 can be made uniform in the wafer surface.
- the wafer holding unit 10 shown in FIG. 1 is a spin chuck. Instead, as shown in FIG. 16, the wafer holding unit 130 includes a container 131 having an upper surface opened, and holds the wafer W inside the container 131. And the plating solution M is stored.
- the wafer holding unit 130 is provided with a driving mechanism 132 provided with an elevating driving source such as a cylinder, for example, and the container 131 can be moved in the vertical direction by the driving mechanism 132.
- the drive mechanism 132 constitutes the moving mechanism in the present invention.
- the plating solution M is supplied from the nozzle 40 into the container 131 while the wafer W is held in the container 131. Then, a plating process is performed on the wafer W.
- the same effect as the above embodiment can be enjoyed. That is, the plating process can be uniformly performed on the surface of the wafer W using the manufacturing apparatus 1 having a simple configuration. Further, since a large amount of plating solution M can be stored in the container 131, this embodiment is particularly useful when the target film thickness of the copper plating 60 is large, for example.
- the wafer holding unit 130 described above may be applied to the manufacturing apparatus 1 shown in FIG. Also in this embodiment, the same effect as in the above embodiment can be enjoyed.
- the wafer holding unit 10 (wafer holding unit 130) is moved by the driving mechanism 11 (driving mechanism 132) in the manufacturing apparatus 1, but the electrolytic processing unit 20 may be moved. Both the wafer holding unit 10 (wafer holding unit 130) and the electrolytic processing unit 20 may move.
- the present invention can be applied to various electrolytic processes such as an etching process.
- the present invention can also be applied to the case where the ions to be processed are oxidized on the surface side of the wafer W.
- the ion to be processed is an anion, and the same electrolytic treatment may be performed with the anode and the cathode reversed in the above embodiment.
- the same effects as those in the above embodiment can be obtained regardless of the difference between oxidation and reduction of ions to be processed.
Abstract
Description
本願は、2015年12月3日に日本国に出願された特願2015-236353号に基づき、優先権を主張し、その内容をここに援用する。
本発明はこの例に限らず種々の態様を採りうるものである。
10 ウェハ保持部
11 駆動機構
20 電解処理部
21 本体部
22 端子
23 直接電極
24 間接電極
30 直流電源
31 スイッチ
40 ノズル
50 制御部
60 銅めっき
100 スイッチ
110 端子
111 共通電極
112 コンデンサ
120 直流電源
123 スイッチ
130 ウェハ保持部
131 容器
132 駆動機構
C 銅イオン
M めっき液
S 硫酸イオン
W ウェハ(半導体ウェハ)
Claims (16)
- 半導体装置の製造装置であって、
基板を保持する基板保持部と、
前記基板保持部に保持された基板に処理液を供給する処理液供給部と、
前記基板保持部に対向して配置され、当該基板保持部に保持された基板に電解処理を行う電解処理部と、
基板に電圧を印加するための端子と、を有し、
前記電解処理部は、
基板に供給された前記処理液に接触し、基板との間で電圧を印加するための直接電極と、
基板に供給された前記処理液に電界を形成する間接電極と、を有する。 - 請求項1に記載の半導体装置の製造装置において、
前記電解処理部は、絶縁体からなる本体部をさらに有し、
前記直接電極は、前記本体部の表面に設けられ、
前記間接電極は、前記本体部の内部に設けられている。 - 請求項2に記載の半導体装置の製造装置において、
前記間接電極は、前記本体部の内部において複数積層して設けられている。 - 半導体装置の製造装置であって、
基板を保持する基板保持部と、
前記基板保持部に保持された基板に処理液を供給する処理液供給部と、
前記基板保持部に対向して配置され、当該基板保持部に保持された基板に電解処理を行う電解処理部と、
基板に電圧を印加するための端子と、を有し、
前記電解処理部は、
絶縁体からなる本体部と、
前記本体部の表面に設けられ、基板に供給された前記処理液に接触し、基板との間で電圧を印加すると共に、基板に供給された前記処理液に電界を形成する共通電極と、
配線を介して前記共通電極に接続されたコンデンサと、を有する。 - 請求項1に記載の半導体装置の製造装置において、
前記電解処理部は前記端子を保持する。 - 請求項1に記載の半導体装置の製造装置において、
前記基板保持部又は前記電解処理部を相対的に移動させる移動機構をさらに有する。 - 請求項1に記載の半導体装置の製造装置において、
前記基板保持部を回転させる回転機構をさらに有する。 - 請求項1に記載の半導体装置の製造装置において、
前記基板保持部は、上面が開口した容器を備え、当該容器の内部に基板を保持し、且つ前記処理液を貯留する。 - 半導体装置の製造方法であって、
基板を保持する基板保持部と、当該基板保持部に保持された基板に電解処理を行う電解処理部と、を対向配置する第1の工程と、
処理液供給部によって、前記基板保持部に保持された基板に処理液を供給する第2の工程と、
基板に電圧を印加するための端子を基板に接触させると共に、前記電解処理部が備える直接電極を前記処理液に接触させる第3の工程と、
前記電解処理部が備える間接電極に電圧を印加することで、前記処理液に電界を形成し、当該処理液中の被処理イオンを基板側に移動させる第4の工程と、
前記直接電極と基板との間に電圧を印加することで、基板側に移動した前記被処理イオンを酸化又は還元する第5の工程と、を有する。 - 請求項9に記載の半導体装置の製造方法において、
前記電解処理部は、絶縁体からなる本体部をさらに有し、
前記直接電極は、前記本体部の表面に設けられ、
前記間接電極は、前記本体部の内部に設けられている。 - 請求項10に記載の半導体装置の製造方法において、
前記間接電極は、前記本体部の内部において複数積層して設けられている。 - 半導体装置の製造方法であって、
基板を保持する基板保持部と、当該基板保持部に保持された基板に電解処理を行う電解処理部と、を対向配置する第1の工程と、
処理液供給部によって、前記基板保持部に保持された基板に処理液を供給する第2の工程と、
基板に電圧を印加するための端子を基板に接触させると共に、前記電解処理部が備える共通電極を前記処理液に接触させる第3の工程と、
前記共通電極に電圧を印加することで、前記処理液に電界を形成し、当該処理液中の被処理イオンを基板側に移動させる第4の工程と、
前記共通電極と基板との間に電圧を印加することで、基板側に移動した前記被処理イオンを酸化又は還元する第5の工程と、を有し、
前記電解処理部は、絶縁体からなる本体部をさらに有し、
前記共通電極は、前記本体部の表面に設けられ、
前記共通電極には、配線を介してコンデンサが接続されている。 - 請求項9に記載の半導体装置の製造方法において、
前記電解処理部は前記端子を保持し、
前記第3の工程において、前記端子の高さを調整して当該端子を基板に接触させる。 - 請求項9に記載の半導体装置の製造方法において、
前記第3の工程において、移動機構によって前記基板保持部又は前記電解処理部を相対的に移動させる。 - 請求項9に記載の半導体装置の製造方法において、
前記第2の工程において、回転機構によって前記基板保持部を回転させながら、前記処理液供給部によって前記基板保持部に保持された基板に前記処理液を供給する。 - 請求項9に記載の半導体装置の製造方法において、
前記基板保持部は上面が開口した容器を備え、
前記第2の工程において、前記容器の内部に基板を保持しつつ、前記処理液供給部によって前記容器の内部に前記処理液を供給し貯留する。
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WO2018070188A1 (ja) * | 2016-10-12 | 2018-04-19 | 東京エレクトロン株式会社 | 電解処理治具、電解処理治具の製造方法及び電解処理装置 |
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WO2019102867A1 (ja) * | 2017-11-22 | 2019-05-31 | 東京エレクトロン株式会社 | 半導体装置の製造装置、半導体装置の製造方法及びコンピュータ記憶媒体 |
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