WO2017065282A1 - 基板液処理方法、基板液処理装置及び記憶媒体 - Google Patents
基板液処理方法、基板液処理装置及び記憶媒体 Download PDFInfo
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- WO2017065282A1 WO2017065282A1 PCT/JP2016/080564 JP2016080564W WO2017065282A1 WO 2017065282 A1 WO2017065282 A1 WO 2017065282A1 JP 2016080564 W JP2016080564 W JP 2016080564W WO 2017065282 A1 WO2017065282 A1 WO 2017065282A1
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- Prior art keywords
- substrate
- liquid
- wafer
- cleaning
- cleaning liquid
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- 239000007788 liquid Substances 0.000 title claims abstract description 179
- 239000000758 substrate Substances 0.000 title claims abstract description 100
- 238000003860 storage Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 title description 25
- 238000004140 cleaning Methods 0.000 claims abstract description 100
- 230000005291 magnetic effect Effects 0.000 claims abstract description 46
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 26
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 26
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000012545 processing Methods 0.000 claims description 115
- 238000003672 processing method Methods 0.000 claims description 10
- 239000012298 atmosphere Substances 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 94
- 239000012530 fluid Substances 0.000 description 39
- 230000007246 mechanism Effects 0.000 description 33
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 27
- 230000008569 process Effects 0.000 description 24
- 238000012546 transfer Methods 0.000 description 20
- 239000007789 gas Substances 0.000 description 17
- 229920000642 polymer Polymers 0.000 description 11
- 238000011084 recovery Methods 0.000 description 9
- 239000000356 contaminant Substances 0.000 description 6
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 6
- 239000000347 magnesium hydroxide Substances 0.000 description 6
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 230000005290 antiferromagnetic effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910020598 Co Fe Inorganic materials 0.000 description 1
- 229910002519 Co-Fe Inorganic materials 0.000 description 1
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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- 230000007480 spreading Effects 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Definitions
- the present invention relates to a substrate liquid processing method, a substrate liquid processing apparatus, and a storage medium.
- MRAM Magnetic Random Access Memory
- MRAM Magnetic Random Access Memory
- MRAM cell a tunnel magnetoresistive element having a structure in which a tunnel insulating layer is sandwiched between two ferromagnetic layers (magnetic layers) has a high magnetoresistance change rate, and is expected to be the device most practically used.
- MgO magnesium oxide
- a cleaning liquid containing moisture such as SC-1 (mixed solution of ammonia water and hydrogen peroxide solution)
- SC-1 mixed solution of ammonia water and hydrogen peroxide solution
- a cleaning process is performed to remove contaminants such as particles and polymers adhering to the surface.
- the substrate is held by a substrate holder called a spin chuck and rotated around a vertical axis.
- a cleaning liquid is supplied to the substrate from a nozzle located above the rotating substrate. After the cleaning process using the cleaning liquid is performed, the cleaning liquid and the contaminants are washed away with a rinse liquid containing water such as pure water (DIW).
- DIW pure water
- a cleaning process is performed using a cleaning liquid containing moisture. It is possible. However, in this case, moisture in the cleaning liquid reacts with magnesium oxide constituting the tunnel insulating layer, and strong alkaline magnesium hydroxide is generated. In this case, the substrate may be corroded by magnesium hydroxide. For this reason, conventionally, it has been considered difficult to perform a cleaning process for removing a polymer using a cleaning liquid containing moisture on a semiconductor wafer for MRAM containing magnesium oxide. However, when the cleaning process is not performed, there is a problem that an etching residue is generated due to a polymer attached to the substrate or a yield is lowered.
- the present invention has been made in consideration of the above points, and a substrate liquid processing method and a substrate capable of performing wafer cleaning processing without corroding an MRAM wafer including a magnesium oxide layer.
- a liquid processing apparatus and a storage medium are provided.
- a substrate liquid processing method includes a first magnetic layer, a second magnetic layer, and a tunnel insulating layer made of magnesium oxide disposed between the first magnetic layer and the second magnetic layer. And a step of supplying a cleaning liquid to the substrate and cleaning the substrate, and then supplying a rinse liquid to the substrate and rinsing the cleaning liquid.
- the concentration of water contained in the cleaning liquid and the rinsing liquid is 3% by weight or less.
- a substrate liquid processing apparatus includes a first magnetic layer, a second magnetic layer, and a tunnel insulating layer made of magnesium oxide disposed between the first magnetic layer and the second magnetic layer.
- a substrate holding unit for holding the substrate, a cleaning liquid nozzle for supplying the cleaning liquid for cleaning the substrate to the substrate, and a rinsing nozzle for supplying a rinsing liquid for rinsing the cleaning liquid to the substrate.
- the concentration of water contained in the cleaning liquid and the rinsing liquid is 3% by weight or less.
- the substrate can be cleaned without corroding the MRAM substrate including the magnesium oxide layer.
- FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to an embodiment of the present invention.
- FIG. 2 is a longitudinal sectional view showing a schematic configuration of a processing unit (substrate liquid processing apparatus) according to the embodiment of the present invention.
- FIG. 3 is a piping diagram showing the configuration of the processing fluid supply source according to the embodiment of the present invention.
- FIG. 4 is a cross-sectional view schematically showing a wafer to be cleaned using the processing unit (substrate liquid processing apparatus) according to the embodiment of the present invention.
- FIG. 5 is a schematic cross-sectional view showing the substrate liquid processing method according to the embodiment of the present invention.
- FIG. 6 is a longitudinal sectional view showing a schematic configuration of a processing unit (substrate liquid processing apparatus) according to a modification of the embodiment of the present invention.
- FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment.
- the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.
- the substrate processing system 1 includes a carry-in / out station 2 and a processing station 3.
- the carry-in / out station 2 and the processing station 3 are provided adjacent to each other.
- the loading / unloading station 2 includes a carrier placement unit 11 and a conveyance unit 12. A plurality of carriers C that accommodate a plurality of wafers W in a horizontal state are placed on the carrier placement unit 11.
- the transfer unit 12 is provided adjacent to the carrier placement unit 11 and includes a substrate transfer device 13 and a delivery unit 14 inside.
- the substrate transfer device 13 includes a substrate holding mechanism that holds the wafer W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 14 using the substrate holding mechanism. Do.
- the processing station 3 is provided adjacent to the transfer unit 12.
- the processing station 3 includes a transport unit 15 and a plurality of processing units 16.
- the plurality of processing units 16 are provided side by side on the transport unit 15.
- the transfer unit 15 includes a substrate transfer device 17 inside.
- the substrate transfer device 17 includes a substrate holding mechanism that holds the wafer W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the delivery unit 14 and the processing unit 16 using the substrate holding mechanism. I do.
- the processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17.
- the substrate processing system 1 includes a control device 4.
- the control device 4 is a computer, for example, and includes a control unit 18 and a storage unit 19.
- the storage unit 19 stores a program for controlling various processes executed in the substrate processing system 1.
- the control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.
- Such a program may be recorded in a computer-readable storage medium and installed in the storage unit 19 of the control device 4 from the storage medium.
- Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.
- the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11 and receives the taken-out wafer W. Place on the transfer section 14.
- the wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.
- the wafer W loaded into the processing unit 16 is processed by the processing unit 16, then unloaded from the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier platform 11 by the substrate transfer device 13.
- FIG. 2 is a diagram showing a schematic configuration of the processing unit 16.
- the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a recovery cup 50.
- the chamber 20 accommodates the substrate holding mechanism 30, the processing fluid supply unit 40, and the recovery cup 50.
- An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20.
- the FFU 21 forms a down flow in the chamber 20.
- the substrate holding mechanism 30 includes a holding part 31, a support part 32, and a driving part 33.
- the holding unit 31 holds the wafer W horizontally.
- pillar part 32 is a member extended in a perpendicular direction, a base end part is rotatably supported by the drive part 33, and supports the holding
- the drive unit 33 rotates the column unit 32 around the vertical axis.
- the substrate holding mechanism 30 rotates the support unit 32 by rotating the support unit 32 using the drive unit 33, thereby rotating the wafer W held by the support unit 31. .
- the processing fluid supply unit 40 supplies a processing fluid to the wafer W.
- the processing fluid supply unit 40 is connected to a processing fluid supply source 70.
- the recovery cup 50 is disposed so as to surround the holding unit 31, and collects the processing liquid scattered from the wafer W by the rotation of the holding unit 31.
- a drain port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged from the drain port 51 to the outside of the processing unit 16. Further, an exhaust port 52 for discharging the gas supplied from the FFU 21 to the outside of the processing unit 16 is formed at the bottom of the recovery cup 50.
- the liquid processing apparatus includes a plurality of processing units 16 that perform liquid processing on the wafer W, and a processing fluid supply source 70 that supplies the processing liquid to the processing units 16.
- the processing fluid supply source 70 includes a tank 102 that stores the processing liquid, and a circulation line 104 that exits from the tank 102 and returns to the tank 102.
- the circulation line 104 is provided with a pump 106.
- the pump 106 creates a circulating flow that exits the tank 102, passes through the circulation line 104, and returns to the tank 102.
- a filter 108 for removing contaminants such as particles contained in the processing liquid is provided in the circulation line 104 on the downstream side of the pump 106. If necessary, auxiliary equipment (such as a heater) may be further provided in the circulation line 104.
- One or more branch lines 112 are connected to the connection area 110 set in the circulation line 104. Each branch line 112 supplies the processing liquid flowing through the circulation line 104 to the corresponding processing unit 16. Each branch line 112 can be provided with a flow rate adjusting mechanism such as a flow rate control valve, a filter, or the like, if necessary.
- the liquid processing apparatus includes a tank liquid replenishing unit 116 that replenishes the tank 102 with a processing liquid or a processing liquid constituent component.
- the tank 102 is provided with a drain unit 118 for discarding the processing liquid in the tank 102.
- the processing fluid supply source 70 includes a cleaning liquid supply mechanism 71 and a rinse liquid supply mechanism 73 as will be described later.
- the cleaning liquid supply mechanism 71 and the rinsing liquid supply mechanism 73 each have a piping system shown in FIG.
- the processing liquid stored in the tank 102 is a cleaning liquid described later
- the processing liquid stored in the tank 102 is a rinsing liquid described later.
- the processing fluid supply unit 40 and the processing fluid supply source 70 according to this embodiment will be described in more detail.
- the processing fluid supply unit 40 includes a cleaning liquid nozzle 41 that discharges a cleaning liquid as a processing liquid onto the upper surface of the wafer W (the surface of the wafer on which the device is formed), and a rinse nozzle 43 that supplies a rinsing liquid onto the upper surface of the wafer W. have.
- the cleaning liquid nozzle 41 and the rinsing nozzle 43 are attached to the tip of the nozzle arm 45.
- the nozzle arm 45 can be turned around the vertical axis by the arm driving unit 46 and can be moved up and down in the vertical direction. Accordingly, the cleaning liquid nozzle 41 and the rinsing nozzle 43 are movable between a processing position above the wafer W and a retracted position outside the recovery cup 50 in plan view.
- the cleaning liquid supplied from the cleaning liquid nozzle 41 is a liquid that does not substantially contain moisture. Any cleaning liquid may be used as long as it can remove contaminants such as particles and polymers attached to the surface of the wafer W.
- a cleaning solution for example, an organic solvent containing N-methyl-2-pyrrolidone, glycol and a surfactant can be mentioned.
- the rinsing liquid supplied from the rinsing nozzle 43 is a liquid that does not substantially contain moisture.
- This rinse liquid is for washing away the cleaning liquid and the contaminants contained in the cleaning liquid from the wafer W.
- examples of such a rinsing liquid include organic solvents such as IPA (isopropyl alcohol).
- the rinse liquid is made of a different type of liquid from the cleaning liquid.
- substantially does not contain moisture includes not only the case where no moisture is contained, but also the state in which moisture such as in the air is inevitably dissolved in the liquid. Even when water is dissolved in the liquid, it is sufficient if the water concentration does not corrode the wafer W. Specifically, the concentration of water contained in the liquid is preferably 3% by weight or less, more preferably 1% by weight or less.
- a lower nozzle 47 for supplying a processing liquid such as IPA as a processing fluid to the lower surface of the wafer W is further provided on the lower surface of the wafer W (the back surface of the wafer on which no device is formed).
- the lower nozzle 47 has a processing fluid discharge port 47a for discharging the processing fluid.
- the processing fluid discharge port 47a includes an opening formed at the upper end of a processing fluid passage 47b extending in the vertical direction in the processing fluid supply column 48.
- the processing fluid supply column 48 is provided coaxially with the column 32 in the hollow column 32 (that is, the rotation shaft) of the substrate holding mechanism 30 and is supported so as not to rotate even when the column 32 rotates. .
- the processing fluid supply source 70 includes a cleaning liquid supply mechanism 71 that supplies a cleaning liquid substantially free of moisture to the cleaning liquid nozzle 41, and a rinse liquid supply mechanism 73 that supplies a rinse liquid substantially free of moisture to the rinse nozzle 43. have. Further, a processing fluid supply mechanism 75 that supplies a processing fluid to the processing fluid discharge port 47 a of the lower nozzle 47 is connected to the lower nozzle 47.
- these supply mechanisms include a pipe that connects a processing fluid storage section such as a liquid storage tank and a corresponding nozzle, and a flow rate such as an on-off valve and a flow control valve provided in the pipe. It can be composed of a control device or the like.
- FIG. 4 is a cross-sectional view schematically showing a wafer W to be cleaned using the processing unit 16 according to this embodiment.
- the wafer W shown in FIG. 4 is used for manufacturing an electronic device using the TMR effect such as MRAM.
- the wafer W may be, for example, an in-plane magnetization type MTJ element.
- Wafer W includes a first magnetic layer 81, a second magnetic layer 82, and a tunnel insulating layer 83 disposed between the first magnetic layer 81 and the second magnetic layer 82.
- the tunnel insulating layer 83 is composed of a magnesium oxide (MgO) layer.
- the first magnetic layer 81 and the second magnetic layer 82 may be magnetic metal layers such as a Co—Fe—B layer, for example.
- the wafer W includes a substrate body 84, a base layer 85 provided on the substrate body 84, an antiferromagnetic layer 86 provided on the base layer 85, and a first layer provided on the antiferromagnetic layer 86.
- the magnetic layer 87 includes a third magnetic layer 87, a fourth magnetic layer 88 provided on the third magnetic layer 87, and a cap layer 89 provided on the second magnetic layer 82.
- the substrate body 84 is a Si substrate
- the underlayer 85 is a Ta layer
- the antiferromagnetic layer 86 is a Mn—Pt layer
- the third magnetic layer 87 is a Co—Fe layer
- the four magnetic layer 88 is a Ru layer
- the cap layer 89 is a Ta layer.
- the present invention is not limited thereto, and a plurality of layers containing a metal such as Pt, Pd, Co, Ta, Ru, CoFeB, and CoPt may be stacked on the substrate body 84.
- a wafer W including a first magnetic layer 81, a second magnetic layer 82, and a tunnel insulating layer 83 made of magnesium oxide, which is cleaned by the processing unit 16, is prepared. Specifically, before performing the cleaning process in the processing unit 16, a film forming process, an annealing process, and a dry etching process are sequentially performed, and the wafer W is obtained.
- the underlayer 85, the antiferromagnetic layer 86, the third magnetic layer 87, the fourth magnetic layer 88, the first magnetic layer 81, the tunnel insulating layer 83, and the second magnetic layer are formed on the substrate body 84.
- 82 and a cap layer 89 are sequentially formed.
- These films are formed using a film forming apparatus such as a sputtering apparatus, for example.
- a film forming apparatus such as a sputtering apparatus, for example.
- each film formed on the substrate main body 84 is heat-treated (magnetic annealing) in a strong magnetic field, thereby expressing its magnetic characteristics.
- the dry etching step each film formed on the substrate body 84 is dry etched, whereby each film on the substrate body 84 is formed in a predetermined pattern.
- the processing unit 16 in FIG. 2 performs processing to remove the polymer adhering to the surface of the wafer W.
- the tunnel insulating layer 83 of the wafer W is composed of a magnesium oxide (MgO) layer.
- MgO magnesium oxide
- This magnesium oxide is easily hydroxylated in response to moisture to form strong alkaline magnesium hydroxide. For this reason, when the polymer adhering to the wafer W is removed, if water is contained in the cleaning liquid or the rinsing liquid, magnesium hydroxide may be generated from the magnesium oxide of the tunnel insulating layer 83 and the wafer W may be corroded.
- the polymer is surely removed without corroding the wafer W by cleaning and rinsing the wafer W using a cleaning liquid and a rinsing liquid substantially free of moisture.
- the following steps are automatically executed under the control of the control device 4 as described above.
- the wafer W before cleaning is carried into the processing unit 16 by the arm (see FIG. 1) of the substrate transfer device 17, and this wafer W is held by the substrate holding mechanism 30.
- the wafer W is rotated around the vertical axis by the substrate holding mechanism 30.
- the rotation speed of the wafer W at this time may be, for example, 100 rpm or more and 2000 rpm or less.
- the cleaning liquid nozzle 41 is positioned directly above the center of the wafer W.
- the cleaning liquid is supplied to the cleaning liquid nozzle 41 at a temperature and flow rate controlled from the cleaning liquid supply mechanism 71, and the cleaning liquid is discharged from the cleaning liquid nozzle 41 to the wafer W (see FIG. 5A).
- the discharge flow rate of the cleaning liquid from the cleaning liquid nozzle 41 may be, for example, 100 ml / sec or more and 2000 ml / sec or less.
- the discharge temperature of the cleaning liquid may be, for example, 20 ° C. or higher and lower than the boiling point of the cleaning liquid.
- the cleaning process is performed on the wafer W.
- the cleaning liquid is shaken off from the wafer W by centrifugal force and received by the recovery cup 50.
- the cleaning liquid is discharged from the recovery cup 50 to the outside of the processing unit 16 through the drain port 51.
- the cleaning liquid is composed of a liquid substantially free of moisture, for example, an organic solvent containing N-methyl-2-pyrrolidone, glycol, and a surfactant. For this reason, there is no possibility that magnesium oxide contained in the tunnel insulating layer 83 of the wafer W reacts with moisture in the cleaning liquid and is hydroxylated. The cleaning liquid does not adversely affect layers other than the tunnel insulating layer 83 included in the wafer W.
- the nozzle arm 45 is rotated, and the discharge position of the liquid droplets of the cleaning liquid discharged from the cleaning liquid nozzle 41 with respect to the surface of the wafer W may be moved from the central portion of the wafer W to the peripheral portion. good. Further, the cleaning liquid droplet discharge position may be reciprocated once or a plurality of times between the central portion and the peripheral portion of the wafer W. Thereby, the surface of the wafer W can be cleaned evenly.
- a processing fluid such as IPA is supplied from the processing fluid supply mechanism 75 to the lower nozzle 47, and the processing fluid is discharged from the processing fluid discharge port 47 a of the lower nozzle 47 toward the center of the lower surface of the wafer W. Also good.
- This processing fluid flows while spreading the lower surface of the wafer W toward the peripheral edge of the wafer W due to centrifugal force, whereby the lower surface of the wafer W is covered with the processing fluid.
- the processing fluid supplied from the lower nozzle 47 may be made of a liquid that does not substantially contain moisture, such as IPA.
- the discharge of droplets from the cleaning liquid nozzle 41 is stopped while the wafer W is continuously rotated, and the rinsing liquid is discharged from the rinse nozzle 43 located above the central portion of the wafer W. And a rinsing process for washing away the cleaning liquid and the reaction product remaining on the surface of the wafer W (see FIG. 5B).
- the discharge flow rate of the rinse liquid from the rinse nozzle 43 may be, for example, 100 ml / sec or more and 2000 ml / sec or less.
- the discharge temperature of the rinse liquid may be, for example, 20 ° C. or higher and lower than the boiling point of the rinse liquid.
- the rinsing liquid is made of a liquid that does not substantially contain moisture, such as IPA (isopropyl alcohol). Therefore, when the cleaning liquid and the reaction product on the surface of the wafer W are washed away with the rinse liquid, there is no possibility that magnesium oxide contained in the tunnel insulating layer 83 of the wafer W reacts with moisture in the rinse liquid and is hydroxylated.
- the rinse liquid does not adversely affect each layer other than the tunnel insulating layer 83 of the wafer W.
- ⁇ Drying process> After completion of the rinsing process, the supply of the rinsing liquid from the rinsing nozzle 43 is stopped, the number of rotations of the wafer W is increased, and the rinsing liquid remaining on the wafer W is shaken off by centrifugal force, thereby drying the surface of the wafer W. (See FIG. 5C).
- the rotation speed of the wafer W at this time may be, for example, 500 rpm or more and 2000 rpm or less.
- the discharge flow rate of the rinse liquid is reduced to less than 100 ml / sec, the liquid film of the rinse liquid on the surface of the wafer W is thinned, and the central portion of the wafer W from the dry gas nozzle (not shown)
- the dry gas nozzle may be moved toward the peripheral edge of the wafer W while supplying a dry gas (for example, an inert gas such as N 2). Thereby, drying time can be shortened.
- a series of liquid processing for one wafer W is completed. Thereafter, the wafer W is carried out of the processing unit 16. After being carried out of the processing unit 16, a step of forming a protective film for protecting each film on the substrate body 84 on the surface of the wafer W may be provided by, for example, the CVD method.
- the cleaning liquid is supplied from the cleaning liquid nozzle 41 to the wafer W to clean the substrate. Thereafter, a rinse liquid is supplied from the rinse nozzle 43 to the wafer W, and the cleaning liquid is rinsed. Since the cleaning liquid and the rinsing liquid do not substantially contain water, the water in the cleaning liquid and the rinsing liquid does not react with the magnesium oxide in the wafer W to generate strong alkaline magnesium hydroxide. Thereby, the malfunction which the wafer W corrodes by magnesium hydroxide can be prevented. Further, there is no possibility that the tunnel insulating layer 83 is dissolved and removed. In this way, contaminants such as particles and polymers adhering to the wafer W can be removed without corroding the wafer W, thereby preventing etching residues from being caused by the polymer or lowering the yield. can do.
- a clean gas supply mechanism 90 supplies a low humidity gas called dry air.
- the clean gas supply mechanism 90 has a gas supply mechanism 91 that supplies dry air to the internal space of the chamber 20. Dry air is supplied to the gas supply mechanism 91 from a gas supply source 92 (dry air generating device) via a gas supply path 93.
- the gas supply path 93 is provided with a fluid regulator 94 such as an on-off valve and a regulating valve for regulating the flow rate or pressure of the gas.
- the clean gas supply mechanism 90 supplies dry air into the chamber 20 during the cleaning process, the rinsing process, and the drying process, and the humidity of the atmosphere in the chamber 20 is low, specifically, the dew point temperature is ⁇ 40 ° C. or lower.
- the dew point temperature is adjusted to be ⁇ 110 ° C. to ⁇ 120 ° C.
- the cleaning process and the rinsing process are performed in a low humidity atmosphere, moisture in the air is prevented from dissolving in the cleaning liquid and the rinsing liquid, and the magnesium oxide on the wafer W reacts with the water in the cleaning liquid and the rinsing liquid. This can be prevented more effectively.
- the low-humidity gas supplied to the internal space of the chamber 20 is not limited to dry air, but may be an inert gas as long as the humidity of the atmosphere in the chamber 20 is low.
- the processing fluid supplied from the lower nozzle 47 is made of a liquid that does not substantially contain moisture such as IPA
- the present invention is not limited to this, and the processing fluid supplied from the lower nozzle 47 may be a processing liquid containing moisture such as DIW. Since there is no layer containing magnesium oxide on the back surface side of the wafer W, there is no possibility that moisture in the processing fluid directly contacts and reacts with the magnesium oxide. On the other hand, when DIW is used as the processing fluid, it is possible to reduce the consumption of IPA, reduce the cost required for the cleaning process, and suppress the deterioration of the working environment.
- a low-humidity gas may be supplied to the transfer unit 12 of the wafer W loading / unloading station 2 and the transfer unit 15 of the processing station 3.
- the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying constituent elements without departing from the scope of the invention in the implementation stage.
- various inventions can be formed by appropriately combining a plurality of components disclosed in the embodiment. You may delete a some component from all the components shown by embodiment.
- constituent elements over different embodiments may be appropriately combined.
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Abstract
Description
基板保持機構30によりウエハWを鉛直方向軸線周りに回転させる。このときのウエハWの回転速度は、例えば100rpm以上2000rpm以下としても良い。
洗浄工程の終了後、引き続きウエハWを回転させたまま、洗浄液ノズル41からの液滴の吐出を停止し、ウエハWの中心部の上方に位置するリンスノズル43からリンス液をウエハWの中心部に供給して、ウエハWの表面に残留した洗浄液および反応生成物を洗い流すリンス処理を行う(図5(b)参照)。このときリンスノズル43からのリンス液の吐出流量は、例えば100ml/sec以上2000ml/sec以下としても良い。また、リンス液の吐出温度は、例えば20℃以上かつリンス液の沸点未満としても良い。上述したように、リンス液は、水分を実質的に含まない液体、例えばIPA(イソプロピルアルコール)からなる。このため、リンス液によりウエハW表面の洗浄液および反応生成物を洗い流す際、ウエハWのトンネル絶縁層83に含まれる酸化マグネシウムがリンス液中の水分と反応して水酸化されてしまうおそれがない。なお、上記リンス液は、ウエハWのトンネル絶縁層83以外の各層に悪影響を及ぼすこともない。
リンス工程の終了後、リンスノズル43からのリンス液の供給を停止し、ウエハWの回転数を増加させてウエハW上に残存するリンス液を遠心力で振り切ることにより、ウエハWの表面を乾燥させる(図5(c)参照)。このときのウエハWの回転速度は、例えば500rpm以上2000rpm以下としても良い。なお、リンス工程と乾燥工程との間に、リンス液の吐出流量を100ml/sec未満に減少させ、ウエハWの表面のリンス液の液膜を薄くし、図示しない乾燥ガスノズルからウエハWの中心部に乾燥ガス(例えば、N2のような不活性ガス)を供給しながらウエハWの周縁部に向けて乾燥ガスノズルを移動させても良い。これにより乾燥時間を短縮することができる。
Claims (9)
- 第1磁性層と、第2磁性層と、前記第1磁性層と前記第2磁性層との間に配置された酸化マグネシウムからなるトンネル絶縁層とを含む基板を準備する工程と、
洗浄液を前記基板に供給し、前記基板を洗浄する洗浄工程と、
その後、リンス液を前記基板に供給し、前記洗浄液をリンスするリンス工程と、
を備え、
前記洗浄液および前記リンス液に含まれる水分の濃度は、3重量%以下であることを特徴とする基板液処理方法。 - 前記洗浄液は、有機系溶剤であることを特徴とする請求項1記載の基板液処理方法。
- 前記リンス液は、IPAであることを特徴とする請求項1記載の基板液処理方法。
- 前記洗浄工程および前記リンス工程は、露点温度が-40℃以下となる雰囲気で行われることを特徴とする請求項1記載の基板液処理方法。
- 第1磁性層と、第2磁性層と、前記第1磁性層と前記第2磁性層との間に配置された酸化マグネシウムからなるトンネル絶縁層とを含む基板を保持する基板保持部と、
前記基板を洗浄する洗浄液を、前記基板に対して供給する洗浄液ノズルと、
前記洗浄液をリンスするリンス液を、前記基板に対して供給するリンスノズルと、
を備え、
前記洗浄液および前記リンス液に含まれる水分の濃度は、3重量%以下であることを特徴とする基板液処理装置。 - 前記洗浄液は、有機系溶剤であることを特徴とする請求項5記載の基板液処理装置。
- 前記リンス液は、IPAであることを特徴とする請求項5記載の基板液処理装置。
- 前記基板保持部、前記洗浄液ノズルおよび前記リンスノズルは、チャンバ内に収容され、前記チャンバ内の雰囲気の露点温度が-40℃以下となるように調整されていることを特徴とする請求項5記載の基板液処理装置。
- 基板液処理装置の動作を制御するためのコンピュータにより実行されたときに、前記コンピュータが前記基板液処理装置を制御して請求項1記載の基板液処理方法を実行させるプログラムが記録された記憶媒体。
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