WO2017059739A1 - 横向扩散金属氧化物半导体场效应管 - Google Patents
横向扩散金属氧化物半导体场效应管 Download PDFInfo
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- WO2017059739A1 WO2017059739A1 PCT/CN2016/095902 CN2016095902W WO2017059739A1 WO 2017059739 A1 WO2017059739 A1 WO 2017059739A1 CN 2016095902 W CN2016095902 W CN 2016095902W WO 2017059739 A1 WO2017059739 A1 WO 2017059739A1
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- conductivity type
- well region
- effect transistor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 230000005669 field effect Effects 0.000 title claims abstract description 20
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 19
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 22
- 229920005591 polysilicon Polymers 0.000 claims abstract description 22
- 210000000746 body region Anatomy 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 230000005684 electric field Effects 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Definitions
- This invention relates to semiconductor processes, and more particularly to a laterally diffused metal oxide semiconductor field effect transistor having a RESURF (Reduced Surface Electric Field) structure.
- RESURF Reduced Surface Electric Field
- the basic structure using the RESURF (Reduced Surface Electric Field) principle consists of a low doped P-type substrate and a low doped N-type epitaxial layer. A P well is formed on the epitaxial layer and N+, P+ are implanted to form a lateral P-well/N-epi junction and a longitudinal P-sub/N-epi junction. Due to the higher doping concentration at both ends of the lateral junction, the breakdown voltage is lower than the longitudinal junction.
- the basic principle of RESURF is to make the epitaxial layer completely depleted before the lateral junction reaches the critical avalanche breakdown electric field by using the interaction of the lateral junction and the longitudinal junction. By reasonably optimizing the device parameters, the breakdown of the device occurs in the longitudinal junction, thereby Reduce the effect of the surface electric field.
- the conventional RESURF structure achieves the required withstand voltage by adjusting the N-P type impurity concentration in the drift region to meet the RESURF requirement. And the on-resistance is required to be as small as possible to reduce the switching loss.
- a conventional RESURF structure laterally diffused metal oxide semiconductor field effect transistor (LDMOSFET) is provided with a floating P-ring in the drift region, but during the switching process, the floating layer P-ring cannot be released in time. The small sub-charge generated by one switching cycle, so the charge accumulation effect in the next cycle tends to result in higher gate-drain capacitance (Cgd) and poor dynamic characteristics of the device.
- LDMOSFET laterally diffused metal oxide semiconductor field effect transistor
- a laterally diffused metal oxide semiconductor field effect transistor comprising: a substrate; a first conductivity type well region; a second conductivity type well region; the first conductivity type and the second conductivity type being opposite conductivity types; , in the first conductivity type well region; a source, located in the second conductivity type well region; a gate spanning the surface of the first conductivity type well region and the second conductivity type well region; a layer ring disposed at the top of the first conductivity type well region between the gate and the drain; and a plurality of trench polysilicon electrodes each extending through the floating layer ring Into the first conductivity type well region.
- the laterally diffused metal oxide semiconductor field effect transistor has a trench polysilicon electrode disposed in the floating layer ring, and the potential of the floating layer ring is relatively stable due to capacitive coupling of the trench polysilicon electrode, and the gate-drain capacitance is lowered. Cgd helps to improve the dynamic characteristics of the device.
- Figure 1 is a cross-sectional view showing a laterally diffused metal oxide semiconductor field effect transistor in an embodiment.
- the vocabulary of the semiconductor field used herein is a technical vocabulary commonly used by those skilled in the art, for example, for P-type and N-type impurities, to distinguish the doping concentration, the simple P+ type represents a heavily doped concentration of the P-type, and the P-type represents P type with doping concentration, P-type represents P type with light doping concentration, N+ type represents N type with heavy doping concentration, N type represents N type with medium doping concentration, and N type represents light doping concentration N type.
- FIG. 1 is a cross-sectional view showing a laterally diffused metal oxide semiconductor field effect transistor in an embodiment.
- the N-type is defined as the first conductivity type
- the P-type is the second conductivity type.
- the lateral diffusion metal-oxide-semiconductor field effect transistor includes the P-type substrate 10 and the P-type liner.
- N-well 30 as a drift region (ie, a first type of well-type well region), and shallow well 32 (also an N-well) in N-well 30
- An N+ drain 44 disposed in the shallow well 32, an N+ source 42 disposed in the P well 20, and a P+ body region 48 in the P well 20, a gate disposed on a surface of the junction of the P well 20 and the N well 30 46, further comprising a floating layer P-ring 50 disposed on top of the N-well 30 and between the gate 46 and the shallow well 32, and a trench polysilicon electrode 60 extending through the floating layer P-ring 50 into the N-well 30 .
- the trench polysilicon electrode 60 includes a silicon oxide outer wall 64 and polysilicon 62 filled in the outer silicon oxide wall 64.
- a trench polysilicon electrode 60 is disposed in the floating layer P-type ring 50, and the floating layer P-type ring 50 is formed by capacitive coupling of the trench polysilicon electrode 60.
- the potential is relatively stable and the gate-drain capacitance Cgd is lowered, which helps to improve the dynamic characteristics of the device.
- the trench polysilicon electrode 60 includes a silicon oxide outer wall 64 and polysilicon 62 that is filled in the outer silicon oxide wall 64. Due to the material properties of the outer wall 64 of the silicon oxide, the critical electric field is higher (three times the electric field in the silicon), the influence of the additional electric field introduced in the floating layer P-ring 50 on the total electric field of the device is weakened, and the withstand voltage of the device is improved. .
- trench polysilicon electrodes 60 adjacent to the side of the gate 46 are electrically connected to the gate 46. This increases the majority carrier concentration in the JFET region when the device is turned on, which helps to reduce the on-resistance Rsp of the device.
- the trench polysilicon electrode 60 other than the trench polysilicon electrode 60 electrically connected to the gate 46 remains in a floating state and is not electrically connected to the gate.
- the gate 46 of the device is grounded with the source 42 (the drain 44 is at a high potential), and the trench polysilicon electrodes 60 electrically connected to the gate 46 are grounded, which can increase holes.
- the concentration contributes to the depletion of the N well 30, so that the doping concentration of the N well 30 can be appropriately increased at the time of manufacture, and the on-resistance Rsp can be further lowered.
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Abstract
Description
Claims (9)
- 一种横向扩散金属氧化物半导体场效应管,包括:衬底;第一导电类型阱区;第二导电类型阱区;所述第一导电类型和第二导电类型为相反的导电类型;漏极,位于所述第一导电类型阱区内;源极,位于所述第二导电类型阱区内;栅极,跨设于所述第一导电类型阱区和第二导电类型阱区表面;浮层环,设于所述第一导电类型阱区顶部,且位于所述栅极和漏极之间;以及多个沟槽多晶硅电极,每个所述沟槽多晶硅电极贯穿所述浮层环伸入所述第一导电类型阱区内。
- 根据权利要求1所述的横向扩散金属氧化物半导体场效应管,其特征在于,所述第一导电类型阱区还包括设于其内部的浅阱,所述漏极设于所述浅阱内,所述浮层环是设于所述浅阱和栅极之间。
- 根据权利要求1所述的横向扩散金属氧化物半导体场效应管,其特征在于,靠近所述栅极一侧的至少一个沟槽多晶硅电极与所述栅极电性连接。
- 根据权利要求3所述的横向扩散金属氧化物半导体场效应管,其特征在于,除与栅极电性连接的沟槽多晶硅电极以外的沟槽多晶硅电极仍保持浮动状态、不与栅极电性连接。
- 根据权利要求1所述的横向扩散金属氧化物半导体场效应管,其特征在于,所述第一导电类型为N型,所述第二导电类型为P型,所述漏极为N+漏极,所述源极为N+源极,所述浮层环是浮层P型环。
- 根据权利要求1所述的横向扩散金属氧化物半导体场效应管,其特征在于,还包括位于所述第二导电类型阱区内的体区。
- 根据权利要求6所述的横向扩散金属氧化物半导体场效应管,其特征在于,所述第一导电类型为N型,所述第二导电类型为P型,所述漏极为N+漏极,所述源极为N+源极,所述浮层环是浮层P型环所述体区为P+体区。
- 根据权利要求6所述的横向扩散金属氧化物半导体场效应管,其特征在于,所述体区设于源极远离所述栅极的一侧。
- 根据权利要求1所述的横向扩散金属氧化物半导体场效应管,其特征在于,每个所述沟槽多晶硅电极包括氧化硅外壁和填充于所述氧化硅外壁内的多晶硅。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16853045.9A EP3361511A4 (en) | 2015-10-08 | 2016-08-18 | LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR |
JP2018517876A JP6618615B2 (ja) | 2015-10-08 | 2016-08-18 | 横方向拡散金属酸化物半導体電界効果トランジスタ |
US15/766,082 US10199495B2 (en) | 2015-10-08 | 2016-08-18 | Laterally diffused metal-oxide semiconductor field-effect transistor |
KR1020187012618A KR20180059931A (ko) | 2015-10-08 | 2016-08-18 | 수평 확산형 금속-산화물 반도체 전계-효과 트랜지스터 |
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CN201510647166.7A CN106571388B (zh) | 2015-10-08 | 2015-10-08 | 具有resurf结构的横向扩散金属氧化物半导体场效应管 |
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US10249707B2 (en) * | 2015-04-08 | 2019-04-02 | Csmc Technologies Fab2 Co., Ltd. | Laterally diffused metal oxide semiconductor field-effect transistor and manufacturing method therefor |
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JP2018125518A (ja) * | 2017-02-03 | 2018-08-09 | ソニーセミコンダクタソリューションズ株式会社 | トランジスタ、製造方法 |
CN107546274B (zh) * | 2017-08-22 | 2020-01-17 | 电子科技大学 | 一种具有阶梯型沟槽的ldmos器件 |
TWI635611B (zh) * | 2017-09-25 | 2018-09-11 | 新唐科技股份有限公司 | 高壓半導體元件 |
CN113130632B (zh) | 2019-12-31 | 2022-08-12 | 无锡华润上华科技有限公司 | 横向扩散金属氧化物半导体器件及其制备方法 |
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- 2016-08-18 KR KR1020187012618A patent/KR20180059931A/ko not_active Application Discontinuation
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KR20180059931A (ko) | 2018-06-05 |
CN106571388B (zh) | 2018-10-12 |
JP2018530922A (ja) | 2018-10-18 |
US10199495B2 (en) | 2019-02-05 |
EP3361511A1 (en) | 2018-08-15 |
EP3361511A4 (en) | 2019-06-19 |
JP6618615B2 (ja) | 2019-12-11 |
CN106571388A (zh) | 2017-04-19 |
US20180286976A1 (en) | 2018-10-04 |
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