WO2017051639A1 - Dispositif de conversion de puissance - Google Patents

Dispositif de conversion de puissance Download PDF

Info

Publication number
WO2017051639A1
WO2017051639A1 PCT/JP2016/074115 JP2016074115W WO2017051639A1 WO 2017051639 A1 WO2017051639 A1 WO 2017051639A1 JP 2016074115 W JP2016074115 W JP 2016074115W WO 2017051639 A1 WO2017051639 A1 WO 2017051639A1
Authority
WO
WIPO (PCT)
Prior art keywords
potential side
terminal
high potential
low potential
main surface
Prior art date
Application number
PCT/JP2016/074115
Other languages
English (en)
Japanese (ja)
Inventor
光利 白田
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP2017503973A priority Critical patent/JP6121080B1/ja
Publication of WO2017051639A1 publication Critical patent/WO2017051639A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Definitions

  • the present invention relates to a power conversion device including a power module and a snubber capacitor.
  • a surge voltage is generated due to the parasitic inductance of the wiring of the main circuit connected to the power semiconductor element. May occur. Due to the surge voltage, a surge current may flow into the power semiconductor element and the power semiconductor element may overheat.
  • a snubber capacitor is connected in parallel between main circuit terminals and the snubber capacitor absorbs a surge voltage. Further, in the conventional power converter, the surge absorption characteristics between products may not be stable because the wiring length from the main circuit terminal to the snubber capacitor varies between products.
  • a wiring connecting a snubber capacitor and a main circuit terminal may be formed with a conductor pattern of a printed wiring board.
  • the wiring length from the snubber capacitor to the main circuit terminal is constant as compared with the case where a lead wire is used for the wiring, so that stable surge absorption characteristics with less variation among products are ensured (for example, patent documents) 1.).
  • a small chip-shaped snubber capacitor may be mounted between conductor patterns on the substrate connected to the main circuit terminals. .
  • the operating frequency tends to increase in order to improve the operating speed of the power converter.
  • the wiring connecting the snubber capacitor and the main circuit terminal shown in Patent Document 1 is formed with the conductor pattern of the printed wiring board, if the operating frequency is increased, the parasitic of the conductor pattern of the printed wiring board is achieved. A surge voltage is generated due to the inductance, the power semiconductor element is overheated, and the power semiconductor element may malfunction.
  • the small chip-shaped snubber capacitor shown in Patent Document 2 is mounted on the same substrate as the power semiconductor element, the small chip-shaped snubber capacitor is precisely mounted on the substrate, and the small chip-shaped snubber capacitor is mounted. Since a fine portion between the snubber capacitor and the substrate is soldered, the assembly process may be complicated.
  • the present invention has been made to solve the above-described problems. Even when the operating frequency is increased without complicating the assembly process, the power semiconductor element malfunctions due to the parasitic inductance of the wiring.
  • the present invention provides a highly reliable power conversion device that is suppressed.
  • the power conversion device of the present invention includes a power module having a high potential side DC terminal (high potential side main circuit terminal) and a low potential side DC terminal (low potential side main circuit terminal), a conductive plate, and a dielectric. And a capacitance element (snubber capacitor) having a high potential side electrode and a low potential side electrode on the main surface. Further, the high potential side electrode of the snubber capacitor is placed on the main surface of the high potential side DC terminal of the power module, and the low potential side electrode of the snubber capacitor is placed on the main surface of the low potential side DC terminal of the power module. Placed.
  • the power module high-potential side DC terminal and the high-potential side electrode of the snubber capacitor are electrically connected via a conductor fixed perpendicularly to the main surface of the high-potential side DC terminal of the power module.
  • the low potential side DC terminal of the power module and the low potential side electrode of the snubber capacitor are electrically connected through a conductor fixed perpendicularly to the main surface of the low potential side DC terminal.
  • the high potential side electrode of the snubber capacitor is placed on the main surface of the high potential side DC terminal of the power module, the high potential side electrode of the snubber capacitor and the high potential side DC terminal of the power module And the distance between the low potential side electrode of the snubber capacitor and the low potential side DC terminal of the power module can be reduced. Therefore, the length of the conductor that electrically connects the high potential side electrode of the snubber capacitor and the high potential side DC terminal of the power module and the low potential side electrode of the snubber capacitor and the low potential side DC terminal of the power module are electrically connected. Each of the lengths of the conductors to be connected can be shortened.
  • the value of the parasitic inductance of these conductors is low. Further, the power module and the snubber capacitor can be easily connected without complicating the assembly process. Therefore, even when the operation speed of the power conversion device is improved, the above-described snubber capacitor suppresses generation of a surge voltage and provides a highly reliable power conversion device without complicating the assembly process. be able to.
  • FIG. 3 is a cross-sectional view of the snubber capacitor according to Embodiment 1 of the present invention taken along the broken line AA in FIG.
  • FIG. 3 is a cross-sectional view of the snubber capacitor according to Embodiment 1 of the present invention, taken along a broken line BB in FIG.
  • FIG. 6 is a cross-sectional view of a snubber capacitor according to a fourth embodiment.
  • FIG. It is a front view of the state which removed the housing cover part of the power module which concerns on Embodiment 5.
  • FIG. 10 is a perspective view of a power conversion device according to a sixth embodiment.
  • FIG. 1 to 5 show a first embodiment for carrying out the present invention.
  • FIG. 1 is an electric circuit diagram showing the electrical connection of the power converter of the present invention.
  • FIG. 2 is a front view of a snubber capacitor which is a component of the present invention.
  • 3 is a cross-sectional view taken along the broken line AA of the snubber capacitor shown in FIG. 4 is a cross-sectional view taken along the broken line BB of the snubber capacitor shown in FIG.
  • FIG. 5 is a perspective view showing the connection between the snubber capacitor and the power module, which are components of the present invention.
  • a power conversion device 100 includes a power module 8 and a snubber capacitor 2.
  • the power module 8 is a power module as a component of the present invention
  • the snubber capacitor 2 is a capacitance element as a component of the present invention. It is.
  • the electrolytic capacitor 3 is an electric capacitor described in the claims.
  • the inverter circuit 1 shows a circuit configuration of the power module 8 and is built in a casing 81 of the power module 8 described later.
  • the high potential side DC terminal 1p of the inverter circuit 1 is connected to one end of the high potential side DC line 6p of the DC line 6, and the other end of the high potential side DC line 6p is connected to the high potential side electrode of the electrolytic capacitor 3 and an external power source. 4 to the high potential side electrode.
  • the low potential side DC terminal 1n of the inverter circuit 1 is connected to one end of the low potential side DC line 6n of the DC line 6, and the other end of the low potential side DC line 6n is connected to the low potential side electrode of the electrolytic capacitor 3 and the outside. It is connected to the low potential side electrode of the power source 4.
  • the high potential side DC terminal 1 p is connected to the high potential side electrode 26 p of the snubber capacitor 2 via the high potential side connection wire 7 p of the connection wire 7, and the low potential side DC terminal 1 n is connected to the low potential side connection wire 7. It is connected to the low potential side electrode 26n of the snubber capacitor 2 via the potential side connection wiring 7n.
  • the u-phase AC line terminal 1u of the inverter circuit 1 is connected to the u-phase terminal (not shown) of the motor 5, and the v-phase AC line terminal 1v of the inverter circuit 1 is connected to the v-phase terminal (see FIG.
  • the w-phase AC line terminal 1 w of the inverter circuit 1 is connected to a w-phase terminal (not shown) of the motor 5.
  • the electrical connection inside the inverter circuit 1 will be described.
  • the high potential side DC terminal 1p is connected to the high potential side main wiring 11p, and the low potential side DC terminal 1n is connected to the low potential side main wiring 11n.
  • the collector side of the IGBT 12a is connected to the high potential side main wiring 11p, and the emitter side of the IGBT 12a is connected to the collector side of the IGBT 12b. Further, the emitter side of the IGBT 12b is connected to the low potential side main wiring 11n.
  • the diode 13a is connected in antiparallel with the IGBT 12a, and the diode 13b is connected in antiparallel with the IGBT 12b.
  • the connection point between IGBT 12a and IGBT 12b is connected to one of u-phase AC line 11u, and the other end of u-phase AC line 11u is connected to u-phase AC line terminal 1u.
  • the collector side of the IGBT 12c is connected to the high potential side main wiring 11p, and the emitter side of the IGBT 12c is connected to the collector side of the IGBT 12d. Further, the emitter side of the IGBT 12d is connected to the low potential side main wiring 11n.
  • the diode 13c is connected in antiparallel with the IGBT 12c, and the diode 13d is connected in antiparallel with the IGBT 12d. Note that a connection point between the IGBT 12c and the IGBT 12d is connected to one of the v-phase AC lines 11v, and the other of the v-phase AC lines 11v is connected to the v-phase AC line terminal 1v.
  • the collector side of the IGBT 12e is connected to the high potential side main wiring 11p, and the emitter side of the IGBT 12e is connected to the collector side of the IGBT 12f. Further, the emitter side of the IGBT 12f is connected to the low potential side main wiring 11n.
  • the diode 13e is connected in antiparallel with the IGBT 12e, and the diode 13f is connected in antiparallel with the IGBT 12f.
  • the connection point of IGBT12e and IGBT12f is connected with one side of w phase alternating current line 11w, and the other side of w phase alternating current line 11w is connected with w phase alternating current line terminal 1w.
  • the control circuit (not shown) is connected to the gate side of the IGBT 12a, the gate side of the IGBT 12b, the gate side of the IGBT 12c, the gate side of the IGBT 12d, the gate side of the IGBT 12e, and the gate side of the IGBT 12f.
  • the structure of the snubber capacitor 2 in the power conversion device according to the first embodiment will be described with reference to FIG. 2, FIG. 3, and FIG. 2, 3, and 4 are different from the actual aspect ratio of the snubber capacitor 2 of the present invention in order to clearly explain the structure of the snubber capacitor 2.
  • the distance between the main surfaces of the capacitor 2 that is, the thickness of the snubber capacitor 2 is shorter than the width of the snubber capacitor 2, and the snubber capacitor 2 has a thin plate shape.
  • a high potential side mounting hole 2p and a low potential side mounting hole 2n are formed on the main surface of snubber capacitor 2, and a snubber other than high potential side mounting hole 2p and low potential side mounting hole 2n is formed. Almost the entire surface of the capacitor 2 is covered with the mold resin 20.
  • the high potential side mounting hole 2p penetrates to the main surface opposite to the main surface shown in FIG. 2, and a part of the high potential side first layer 21p is exposed at the inner peripheral portion to form the high potential side electrode 26p.
  • the low-potential side mounting hole 2n penetrates to the main surface facing the surface shown in FIG. 2, and a part of the low-potential side first layer 21n is exposed at the inner peripheral portion, and the low-potential-side electrode 26n.
  • high potential side mounting hole 2p and low potential side mounting hole 2n each penetrate between two main surfaces, and an insulating film 25 is formed on each inner wall.
  • the high potential side first layer 21p, the low potential side first layer 21n, the high potential side second layer 22p, and the low potential side second layer 22n are conductive plates, These are stacked via a dielectric layer 23.
  • the high potential side first layer 21p and the high potential side second layer 22p are connected via a conductive high potential side connection column 24p that passes through the hole of the low potential side first layer 21n.
  • the low potential side first layer 21n and the low potential side second layer 22n are connected through a conductive low potential side connection column 24n that passes through a hole in the low potential side second layer 22p. Therefore, the high potential side second layer 22p has the same potential as the high potential side electrode 26p, and the low potential side second layer 22n becomes the low potential side electrode 26n. That is, the snubber capacitor 2 has a structure of a capacitance element in which a layer having the same potential as the high potential side electrode 26p and a layer having the same potential as the low potential side electrode 26n are alternately arranged.
  • the power module 8 incorporates the inverter circuit 1 in the housing 81.
  • the high potential side DC terminal 8p on the casing 81 is the high potential side DC terminal 1p of FIG.
  • the low potential side DC terminal 8n indicates the low potential side DC terminal 1n.
  • the u-phase AC terminal 8u indicates the u-phase AC terminal 1u
  • the v-phase AC terminal 8v indicates the v-phase AC terminal 1v
  • the w-phase AC terminal 8w indicates the w-phase AC terminal 1w.
  • Screw holes 82 are formed in the high potential side DC terminal 8p and the low potential side DC terminal 8n, respectively.
  • the high potential side electrode 26p of the snubber capacitor 2 is placed on the main surface of the high potential side DC terminal 8p of the power module 8, and the low potential side electrode is placed on the main surface of the low potential side DC terminal 8n. 26n is placed on each.
  • metal screws (not shown) are inserted into the high-potential side mounting holes 2p and the low-potential side mounting holes 2n from the direction of arrow C, and are inserted into the screw holes 82 and tightened. Therefore, the high potential side electrode 26p is fixed on the main surface of the high potential side DC terminal 8p, and the low potential side electrode 26n is fixed on the main surface of the low potential side DC terminal 8n. Attached to.
  • the high potential side electrode 26p and the metal screw are electrically connected, and the high potential side DC terminal 8p and the metal screw are electrically connected. That is, the high potential side electrode 26p and the high potential side DC terminal 8p are electrically connected via the metal screw.
  • This metal screw plays a role of the high potential side connection wiring 7p.
  • the low potential side electrode 26n and the metal screw are electrically connected, and the low potential side DC terminal 8n and the metal screw are electrically connected. That is, the low potential side electrode 26n and the low potential side DC terminal 8n are electrically connected via the metal screw.
  • This metal screw plays a role of the low potential side connection wiring 7n.
  • a DC voltage is supplied from the external power source 4 to the inverter circuit 1 through the high potential side DC line 6p and the low potential side DC line 6n which are the DC lines 6.
  • the control circuit determines the IGBT 12a to IGBT 12f based on the motor operation command value.
  • An on / off operation is performed, and a three-phase AC voltage having an amplitude and frequency corresponding to the motor operation is output to the motor 5 via the u-phase AC line 11u, the v-phase AC line 11v, and the w-phase AC line 11w.
  • the motor 5 rotates by converting the transmitted power into electromagnetic force.
  • the electrolytic capacitor 3 smoothes the ripple voltage generated in the DC wire 6.
  • the effect of suppressing the surge current of the snubber capacitor 2 will be described. Due to the on / off operation of the IGBTs 12a to 12f, the currents flowing through the IGBTs 12a to 12f change rapidly. At that time, a surge voltage is generated in the wiring of the current path according to the amount obtained by multiplying the value of the parasitic inductance of the wiring of the current path and the rate of change of the current.
  • the current path wiring is mainly wiring from the external power supply 4 to the IGBTs 12a to 12f, and means the high potential side main wiring 11p, the low potential side main wiring 11n, and the DC line 6.
  • the surge voltage causes a change in voltage between the high-potential side main wiring 11p and the low-potential side main wiring 11n, and the surge current flows through the IGBTs 12a to 12f in accordance with the surge voltage, and the IGBTs 12a to IGBT 12f generate heat. .
  • the snubber capacitor 2 Since the snubber capacitor 2 is connected between the high potential side DC terminal 1p and the low potential side DC terminal 1n, the surge voltage is absorbed by the charging / discharging current flowing through the snubber capacitor 2. That is, the installation of the snubber capacitor 2 has the effect of reducing the surge current flowing through the IGBTs 12a to 12f and suppressing heat generation.
  • a surge voltage corresponding to the amount obtained by multiplying the parasitic inductance of the connection wiring 7 and the rate of change of the charge / discharge current of the snubber capacitor 2 is generated in the wiring of the connection wiring 7.
  • the operating frequency of a power converter device is high, it is also considered that a surge voltage becomes a higher value according to the operating frequency.
  • the values of the parasitic inductance and the parasitic impedance of the connection wiring 7 can be reduced, and the surge voltage can be suppressed.
  • the snubber capacitor 2 has a thin plate shape, and the high potential side electrode 26p of the snubber capacitor 2 is the main surface of the high potential side DC terminal 8p of the power module 8. Placed directly above. Further, the high potential side DC terminal 8p and the high potential side electrode 26p are electrically joined via a conductor (metal screw) fixed perpendicularly to the main surface of the high potential side DC terminal 8p. Therefore, the portion corresponding to the wiring length of the high potential side connection wiring 7p can be shortened.
  • the low potential side electrode 26n of the snubber capacitor 2 is placed directly on the main surface of the low potential side DC terminal 8n of the power module 8. Furthermore, the low potential side DC terminal 8n and the low potential side electrode 26n are electrically joined via a conductor (metal screw) fixed perpendicularly to the main surface of the low potential side DC terminal 8n. Therefore, the portion corresponding to the wiring length of the high potential side connection wiring 7p can be shortened.
  • connection wiring 7p and the low potential side connection wiring 7n of the connection wiring 7 are each formed of a metal screw. As a result, the cross-sectional area through which the current flows can be increased as compared with the case where the conductor pattern of the lead wire and the printed wiring board is used, so that the values of parasitic inductance and parasitic impedance can be reduced.
  • the contact area is wider than when a conventional snubber capacitor is soldered. Therefore, the value of the connection resistance between the high potential side electrode 26p and the metal screw can be reduced. Similarly, the value of the connection resistance between the low potential side electrode 26n and the metal screw can be reduced. Further, in the connection between the high potential side DC terminal 8p and the metal screw, since the screw portion of the metal screw is tightened into the screw hole 82 of the high potential side DC terminal 8p, the conventional snubber capacitor is soldered. The contact area is wider than the case. Therefore, the value of the connection resistance between the high potential side DC terminal 8p and the metal screw can be reduced. Similarly, the value of the connection resistance between the low potential side DC terminal 8n and the metal screw can be reduced.
  • the power conversion device of the present invention has a larger cross-sectional area of the connection wiring 7 and a shorter wiring length than that of the conventional product, and can further reduce the contact resistance value. Inductance and parasitic impedance can be very low.
  • the snubber capacitor 2 is electrically connected and fixed to the power module 8, so that the assembly process is smaller than when a small chip-shaped snubber capacitor is soldered to the substrate. It is not complicated and does not lead to high cost of the assembly process. Further, disconnection between the power module 8 and the snubber capacitor 2 due to vibration during use is less likely to occur than when a small chip-shaped snubber capacitor is soldered to the substrate.
  • the power conversion device even when the operating frequency is high, heat generation due to generation of a surge voltage is suppressed, and a power conversion device having high reliability can be obtained.
  • FIG. 6 is a perspective view showing the structure of the power conversion device according to the second embodiment.
  • the same reference numerals or reference numerals as those in FIGS. 1 to 5 are the same or equivalent to the components shown in the first embodiment, and thus detailed description thereof is omitted.
  • the second embodiment shows a form in which two electrolytic capacitors 3 are used. In FIG. 1, two electrolytic capacitors 3 are simply illustrated as one symbol.
  • the snubber capacitor 2 is disposed on the electrolytic capacitor 3 and, similarly to FIG. 5, metal screws (not shown) are inserted into the high potential side mounting holes 2p and the low potential side mounting holes 2n, respectively. Tighten in 82.
  • the snubber capacitor 2 is electrically connected and fixed to the power module 8.
  • the high potential side terminal 3p and the low potential side terminal 3n of the electrolytic capacitor 3 are exposed from a rectangular opening 28 penetrating the main surface of the snubber capacitor 2.
  • the high potential side terminal 3p of the electrolytic capacitor 3 and the high potential side DC terminal 8p (high potential side DC terminal 1p) of the power module 8 are connected via a high potential side DC line 6p (not shown).
  • the low potential side terminal 3n and the low potential side DC terminal 8n (low potential side DC terminal 1n) are connected via a low potential side DC line 6n (not shown).
  • the snubber capacitor 2 can be disposed above the electrolytic capacitor 3. That is, if the surface opposite to the surface having the high potential side terminal 3p and the low potential side terminal 3n of the electrolytic capacitor 3 is the installation surface, the snubber capacitor 2 and the electrolytic capacitor 3 are disposed separately, compared with the snubber capacitor 2 and The installation area of the electrolytic capacitor 3 can be reduced, and the apparatus including the power conversion device and the electrolytic capacitor 3 according to the present invention can be downsized.
  • FIG. 7 is a perspective view showing a structure of a power conversion device of an example different from FIG. 6 according to the second embodiment.
  • the same reference numerals or reference numerals as those in FIG. 6 are the same as or equivalent to the components shown in the first embodiment, and thus detailed description thereof is omitted.
  • a circular opening 28 is provided on the main surface of the snubber capacitor 2, and the electrolytic capacitor 3 is disposed within the inner diameter of the circular opening 28. Further, the high potential side terminal 3p and the high potential side DC terminal 1p are connected via a high potential side DC line 6p (not shown), and the low potential side terminal 3n and the low potential side DC terminal 1n are It is connected via a low potential side DC line 6n (not shown).
  • the electrolytic capacitor 3 can be disposed within the inner periphery of the opening 28 of the snubber capacitor 2. That is, compared with the arrangement of the snubber capacitor 2 and the electrolytic capacitor 3 separately, the installation area of the snubber capacitor 2 and the electrolytic capacitor 3 is reduced, and the size of the device including the power conversion device and the electrolytic capacitor 3 according to the present invention can be reduced. Can be planned.
  • the snubber capacitor 2 is electrically connected and fixed to the power module 8 by tightening a metal screw. Compared with the case where a chip-like snubber capacitor is solder-bonded to the substrate, the assembly process is not complicated, and the cost of the assembly process is not increased. Further, disconnection between the power module 8 and the snubber capacitor 2 due to vibration during use is less likely to occur than when a small chip-shaped snubber capacitor is soldered to the substrate.
  • Embodiment 3 FIG.
  • an opening 28 is provided on the main surface of the snubber capacitor 2, the snubber capacitor 2 is disposed on the electrolytic capacitor 3, and an electrolytic capacitor is provided in the inner periphery of the opening 28 of the snubber capacitor 2.
  • the signal wiring connector 83 of the power module 8 is disposed in the opening 28 of the snubber capacitor 2, and the signal wiring 84 of the power module 8 can be easily connected to an external control device. A form is demonstrated.
  • FIG. 8 is a perspective view showing a connection between the snubber capacitor 2 and the power module 8 which are components of the power conversion device 100 according to the third embodiment.
  • the power module 8 has a signal wiring connector 83 on the main surface, and is connected to a control circuit in the power module 8. Further, the signal wiring connector 83 is connected to an external control device via the signal wiring connector 83, and transmits and receives signals such as an operation command of the power module 8 and an operation state of the power module 8.
  • the snubber capacitor 2 has a rectangular opening 28.
  • a metal screw (not shown) is inserted from the direction of arrow C, and the metal screw is inserted into the screw hole 82 and tightened, whereby the snubber capacitor 2 is attached to the power module 8.
  • the signal wiring connector 83 is disposed so as to pass through the opening 28 from the direction of the arrow D and protrude from the opening 28 or from the opening 28. Therefore, the signal wiring 84 can be easily connected to the signal wiring connector 83 from the main surface of the snubber capacitor 2. That is, the power module 8 and an external control device can be easily connected through the inner periphery of the opening 28, and the installation position of the signal wiring connector 83 on the casing 81 of the power module 8 is restricted. There is no.
  • the snubber capacitor 2 is electrically connected and fixed to the power module 8 by tightening a metal screw. Therefore, as compared with the case where a small chip-shaped snubber capacitor is solder-bonded to the substrate, the assembly process is not complicated and the cost of the assembly process is not increased. Further, disconnection between the power module 8 and the snubber capacitor 2 due to vibration during use is less likely to occur than when a small chip-shaped snubber capacitor is soldered to the substrate.
  • Embodiment 4 FIG.
  • the form using one snubber capacitor 2 has been described.
  • the snubber capacitor 2 having a larger electric capacity may be required. Therefore, in the fourth embodiment, a mode in which a plurality of snubber capacitors 2 are connected to the power module 8 to increase the capacity of the snubber capacitor 2 without increasing the installation area will be described.
  • FIG. 9 is a perspective view showing the structure of the power conversion device according to the fourth embodiment.
  • FIG. 10 is a cross-sectional view of one snubber capacitor 2 according to the fourth embodiment.
  • the same reference numerals or the same reference numerals as those in FIGS. 3 and 7 are the same as or equivalent to the components shown in the first and second embodiments, and thus detailed description thereof is omitted.
  • a plurality of snubber capacitors 2 are arranged in an overlapping manner.
  • a circular opening 28 is provided on the main surface of the snubber capacitor 2, and the electrolytic capacitor 3 is disposed within the inner diameter of the opening 28.
  • FIG. 7 similarly to FIG.
  • metal screws (not shown) are inserted into the high potential side mounting holes 2 p and the low potential side mounting holes 2 n, respectively, and are inserted into the screw holes 82.
  • the plurality of snubber capacitors 2 are fixed to the power module 8 by tightening metal screws.
  • the high potential side surface electrode 27p is formed on both main surfaces of the snubber capacitor 2, and the high potential side surface electrode 27p on the one main surface is already formed in the high potential side mounting hole 2p.
  • One high potential side electrode 27p is connected, and further connected to the high potential electrode 26p.
  • the low potential side surface electrode 27n is formed on two main surfaces of the snubber capacitor 2, and is connected to each other in the low potential side mounting hole 2n. The low potential side surface electrode 27n and the other low potential side surface electrode 27n are connected, and further connected to the low potential side electrode 26n.
  • the high potential side electrodes 26p of the adjacent snubber capacitors 2 are connected via the high potential side surface electrodes 27p, and the adjacent snubber capacitors are similarly arranged.
  • Two low potential side electrodes 26n are connected via a low potential side surface electrode 27n. That is, the plurality of snubber capacitors 2 are connected in parallel, and the electric capacity of the snubber capacitor 2 can be easily increased. Furthermore, the installation area is not increased as in the second embodiment.
  • the snubber capacitor 2 is electrically connected and fixed to the power module 8 by tightening a metal screw. Therefore, as compared with the case where a small chip-shaped snubber capacitor is solder-bonded to the substrate, the assembly process is not complicated and the cost of the assembly process is not increased. Further, disconnection between the power module 8 and the snubber capacitor 2 due to vibration during use is less likely to occur than when a small chip-shaped snubber capacitor is soldered to the substrate.
  • Embodiment 5 FIG.
  • the configuration in which the snubber capacitor 2 is disposed outside the casing 81 of the power module 8 has been described.
  • the snubber capacitor 2 is arranged inside the housing 81.
  • FIG. 11 is a front view showing a state in which a case lid 81b of the power module 8 to be described later is removed.
  • FIG. 12 is a perspective view showing a connection between the snubber capacitor 2 and the power module 8 which are components of the power conversion device 100 according to the fifth embodiment. 11 and 12, the same reference numerals or reference numerals as those in FIGS. 5 and 8 are the same as or equivalent to the components shown in the first to third embodiments, and detailed description thereof is omitted. .
  • the circuit board 9 is housed inside the housing body 81 a of the power module 8.
  • a high potential side DC terminal 9p and a low potential side DC terminal 9n are formed on the main surface of the circuit board 9.
  • the high potential side DC terminal 9p is the same as the high potential side DC terminal 1p of FIG. 1 and is connected to the high potential side DC terminal 8p on the housing 81.
  • the low potential side DC terminal 9n indicates the low potential side DC terminal 1n of FIG. 1 and is connected to the low potential side DC terminal 8n on the housing 81.
  • a screw hole 93 is formed in the high potential side DC terminal 9p and the low potential side DC terminal 9n.
  • a plurality of substrate terminals 91 are provided on the circuit board 9 in order to transmit and receive signals between an external control device and the control circuit.
  • the plurality of substrate terminals 91 and the control circuit include a wiring pattern 92. Connected through.
  • the u-phase AC terminal 8u indicates the u-phase AC terminal 1u
  • the v-phase AC terminal 8v indicates the v-phase AC terminal 1v
  • the w-phase AC terminal 8w indicates the w-phase AC terminal 1w.
  • the housing 81 includes a housing body 81a and a housing lid 81b.
  • the high potential side electrode 26p is placed on the high potential side DC terminal 9p
  • the low potential side electrode 26n is placed on the low potential side DC terminal 9n.
  • metal screws (not shown) are respectively inserted into the high potential side mounting holes 2p and the low potential side mounting holes 2n and inserted into the screw holes 93. Each metal screw is tightened, and the snubber capacitor 2 is fixed to the power module 8.
  • the high potential side electrode 26p and the high potential side DC terminal 9p are electrically connected via a metal screw.
  • the low potential side electrode 26n and the low potential side DC terminal 9n are electrically connected to each other.
  • the housing lid portion 81 b is put on the housing main body portion 81 a, and the snubber capacitor 2 is housed in the housing 81.
  • the board terminal 91 passes through the opening 28 of the snubber capacitor 2 and the lid opening 85 of the housing lid part 81b in the direction of arrow D, and is exposed from the lid opening 85. It is possible to send and receive signals.
  • the power converter 100 can be downsized by incorporating the snubber capacitor 2 in the casing 81 of the power module 8.
  • casing 81 of the power module 8 was demonstrated, this Embodiment 5 does not restrict
  • a plurality of snubber capacitors 2 may be incorporated.
  • the snubber capacitor 2 is electrically connected and fixed to the power module 8 by tightening a metal screw. Therefore, as compared with the case where a small chip-shaped snubber capacitor is solder-bonded to the substrate, the assembly process is not complicated and the cost of the assembly process is not increased. Further, disconnection between the power module 8 and the snubber capacitor 2 due to vibration during use is less likely to occur than when a small chip-shaped snubber capacitor is soldered to the substrate.
  • Embodiment 6 FIG.
  • a configuration has been described in which a plurality of snubber capacitors 2 are stacked in order to increase the capacity of the snubber capacitor 2 without increasing the installation area.
  • a mode in which the heat dissipation of the plurality of snubber capacitors 2 is improved will be described.
  • FIG. 13 is a perspective view showing the structure of the power conversion device according to the sixth embodiment.
  • the same reference numerals or the same reference numerals in FIG. 9 are the same as or equivalent to the components shown in the fourth embodiment, and detailed description thereof will be omitted.
  • spacer 29 between adjacent snubber capacitors 2
  • a plurality of snubber capacitors 2 are arranged at intervals. As described above, by providing the gap between the adjacent snubber capacitors 2, the heat generated in the snubber capacitor 2 can be efficiently released without increasing the installation area.
  • the snubber capacitor 2 is electrically connected and fixed to the power module 8 by tightening a metal screw. Therefore, as compared with the case where a small chip-shaped snubber capacitor is solder-bonded to the substrate, the assembly process is not complicated and the cost of the assembly process is not increased. Further, disconnection between the power module 8 and the snubber capacitor 2 due to vibration during use is less likely to occur than when a small chip-shaped snubber capacitor is soldered to the substrate.
  • the inverter circuit 1 is a three-phase AC inverter that converts DC power into three-phase AC power, but may be a single-phase AC inverter.
  • the IGBT of the inverter circuit 1 may be constituted by a MOSFET or other switching element.
  • the detailed structure of the snubber capacitor 2 has been described.
  • the present invention is not limited to these detailed structures.
  • the snubber capacitor 2 is composed of two high potential layers and two low potential layers, but the number of layers is not limited.
  • the outer shape of the snubber capacitor 2 is a rectangular shape, it is not limited to the outer shape. For example, it may be circular or elliptical.
  • the shape should be appropriately selected according to the installation situation.
  • the snubber capacitor 2 may be a laminate of a conductive foil and a dielectric on a substrate such as a printed circuit board.
  • the metal screw was used for the conductor which electrically connects the power module 8 and the snubber capacitor 2
  • this invention is not limited to a metal screw.
  • the value of the parasitic inductance between the power module 8 and the snubber capacitor 2 can be reduced, and the assembly process is not complicated.
  • it is not limited to metal, and any conductive material may be used.
  • the bonding area is increased and the assembly process is not complicated as compared with the case where the snubber capacitor 2 is a small chip shape, and the assembly between the power module 8 and the snubber capacitor 2 is not complicated.
  • the value of the parasitic inductance can be lowered.
  • the embodiments can be freely combined, or the embodiments can be appropriately changed or omitted.
  • the high potential side DC terminal 8p and the high potential side surface electrode 27p are composed of the low potential side DC terminal 8n and the low potential side surface. Since the electrodes 27n are electrically connected to each other, the high potential side DC terminal 8p and the high potential side electrode 26p are connected via a metal screw, and the low potential side DC terminal 8n and the low potential side electrode 26n are connected to each other.
  • the connection resistance can be lowered as compared with the case where each is electrically connected. Further, the screw in this case may not be conductive. Further, the high potential side surface electrode 27p and the low potential side surface electrode 27n may be formed on one of the main surfaces of the snubber capacitor to which the high potential side DC terminal 8p and the low potential side DC terminal 8n are connected, respectively. .

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)

Abstract

La présente invention est pourvue de : un module de puissance ayant une borne de courant continu côté potentiel élevé, et une borne de courant continu côté potentiel faible ; et un élément de capacité électrique, qui est formé par stratification d'un matériau de panneau conducteur et d'une couche diélectrique, et qui comporte une électrode côté potentiel élevé et une électrode côté potentiel faible sur une surface principale. L'électrode côté potentiel élevé du condensateur d'amortissement est disposée sur une surface principale de la borne de courant continu côté potentiel élevé du module de puissance, et est électriquement connectée à la borne de courant continu côté potentiel élevé par l'intermédiaire d'un conducteur fixé perpendiculairement à la surface principale de la borne de courant continu côté potentiel élevé. L'électrode côté potentiel faible du condensateur d'amortissement est disposée sur une surface principale de la borne de courant continu côté potentiel faible du module de puissance, et est connecté électriquement au potentiel bas-côté borne de courant continu par l'intermédiaire d'un conducteur fixé perpendiculairement à la surface principale de la borne de courant continu côté potentiel faible.
PCT/JP2016/074115 2015-09-24 2016-08-18 Dispositif de conversion de puissance WO2017051639A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2017503973A JP6121080B1 (ja) 2015-09-24 2016-08-18 電力変換装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015186366 2015-09-24
JP2015-186366 2015-09-24

Publications (1)

Publication Number Publication Date
WO2017051639A1 true WO2017051639A1 (fr) 2017-03-30

Family

ID=58386078

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/074115 WO2017051639A1 (fr) 2015-09-24 2016-08-18 Dispositif de conversion de puissance

Country Status (2)

Country Link
JP (1) JP6121080B1 (fr)
WO (1) WO2017051639A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019159316A1 (fr) * 2018-02-16 2019-08-22 三菱電機株式会社 Dispositif de conversion de courant et dispositif à cycle de réfrigération
WO2019159317A1 (fr) * 2018-02-16 2019-08-22 三菱電機株式会社 Dispositif de conversion de puissance et appareil de climatisation l'utilisant
CN111800020A (zh) * 2019-04-03 2020-10-20 Abb瑞士股份有限公司 开关模块组件及其制造方法
EP3930167A1 (fr) * 2020-06-22 2021-12-29 Bombardier Transportation GmbH Agencement de circuit électrique, véhicule ferroviaire et procédé de fabrication d'un agencement de circuit électrique
EP3955453A1 (fr) * 2020-08-11 2022-02-16 Fuji Electric Co., Ltd. Dispositif de conversion d'alimentation électrique
WO2023066621A1 (fr) * 2021-10-21 2023-04-27 Bayerische Motoren Werke Aktiengesellschaft Dispositif de barre omnibus et appareil de condensateur de circuit intermédiaire disposant d'une action d'amortissement, et véhicule à moteur

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007053839A (ja) * 2005-08-17 2007-03-01 Toshiba Corp スナバ回路及びこれを用いた電力変換装置
JP2008295227A (ja) * 2007-05-25 2008-12-04 Toyota Motor Corp コンデンサ一体バスバーの製造方法および電力変換装置
JP2014128066A (ja) * 2012-12-25 2014-07-07 Mitsubishi Electric Corp 半導体モジュール

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6127485U (ja) * 1984-07-23 1986-02-19 富士電機株式会社 スナバ回路
JP3293335B2 (ja) * 1994-07-20 2002-06-17 株式会社デンソー インバータ装置
JP3550970B2 (ja) * 1997-09-19 2004-08-04 株式会社日立製作所 電力変換装置並びに多層積層導体と電気部品接続体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007053839A (ja) * 2005-08-17 2007-03-01 Toshiba Corp スナバ回路及びこれを用いた電力変換装置
JP2008295227A (ja) * 2007-05-25 2008-12-04 Toyota Motor Corp コンデンサ一体バスバーの製造方法および電力変換装置
JP2014128066A (ja) * 2012-12-25 2014-07-07 Mitsubishi Electric Corp 半導体モジュール

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019159316A1 (fr) * 2018-02-16 2019-08-22 三菱電機株式会社 Dispositif de conversion de courant et dispositif à cycle de réfrigération
WO2019159317A1 (fr) * 2018-02-16 2019-08-22 三菱電機株式会社 Dispositif de conversion de puissance et appareil de climatisation l'utilisant
JPWO2019159317A1 (ja) * 2018-02-16 2020-12-03 三菱電機株式会社 電力変換装置およびこれを用いた空気調和装置
JP7012754B2 (ja) 2018-02-16 2022-01-28 三菱電機株式会社 電力変換装置およびこれを用いた空気調和装置
US11509232B2 (en) 2018-02-16 2022-11-22 Mitsubishi Electric Corporation Power converter and air-conditioning apparatus using the same
CN111800020A (zh) * 2019-04-03 2020-10-20 Abb瑞士股份有限公司 开关模块组件及其制造方法
EP3930167A1 (fr) * 2020-06-22 2021-12-29 Bombardier Transportation GmbH Agencement de circuit électrique, véhicule ferroviaire et procédé de fabrication d'un agencement de circuit électrique
EP4224690A1 (fr) * 2020-06-22 2023-08-09 Bombardier Transportation GmbH Ensemble circuit électrique, véhicule ferroviaire et procédé de fabrication d'un ensemble circuit électrique
EP3955453A1 (fr) * 2020-08-11 2022-02-16 Fuji Electric Co., Ltd. Dispositif de conversion d'alimentation électrique
WO2023066621A1 (fr) * 2021-10-21 2023-04-27 Bayerische Motoren Werke Aktiengesellschaft Dispositif de barre omnibus et appareil de condensateur de circuit intermédiaire disposant d'une action d'amortissement, et véhicule à moteur

Also Published As

Publication number Publication date
JP6121080B1 (ja) 2017-04-26
JPWO2017051639A1 (ja) 2017-09-21

Similar Documents

Publication Publication Date Title
JP6121080B1 (ja) 電力変換装置
JP5915350B2 (ja) パワー半導体モジュール
JP3793407B2 (ja) 電力変換装置
WO2010047366A1 (fr) Convertisseur de puissance et système électrique embarqué
US8526189B2 (en) Power module
JP5935672B2 (ja) スイッチング素子ユニット
JP3622782B2 (ja) 半導体装置
WO2015159751A1 (fr) Dispositif à semi-conducteur
JP6230946B2 (ja) 電力変換装置、およびそれを搭載した鉄道車両
JP6053668B2 (ja) 半導体モジュールおよび電力変換装置
JP4538474B2 (ja) インバータ装置
JP4687414B2 (ja) パワー半導体モジュール
US10021802B2 (en) Electronic module assembly having low loop inductance
JP6070581B2 (ja) 端子台、及びこの端子台を備えた電力変換装置
JP4064741B2 (ja) 半導体装置
CN110476343B (zh) 电力转换装置
US7760480B2 (en) Electronic assembly for switching electric power
CN112910287B (zh) 功率用半导体装置
JP2021093484A (ja) 半導体モジュール
JP2005191233A (ja) パワーモジュール
JP6435906B2 (ja) 電力変換装置
JP2014072344A (ja) 平滑コンデンサ
JP6363051B2 (ja) 半導体装置及びインバータ回路
JP2024015805A (ja) スイッチングデバイスおよびスイッチングモジュール
JP2024048494A (ja) スイッチングモジュールおよびインバータ

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2017503973

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16848427

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16848427

Country of ref document: EP

Kind code of ref document: A1