WO2017047310A1 - Transducteur photoélectrique et procédé de production associé - Google Patents

Transducteur photoélectrique et procédé de production associé Download PDF

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Publication number
WO2017047310A1
WO2017047310A1 PCT/JP2016/073871 JP2016073871W WO2017047310A1 WO 2017047310 A1 WO2017047310 A1 WO 2017047310A1 JP 2016073871 W JP2016073871 W JP 2016073871W WO 2017047310 A1 WO2017047310 A1 WO 2017047310A1
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Prior art keywords
amorphous semiconductor
photoelectric conversion
conversion element
semiconductor layer
semiconductor region
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PCT/JP2016/073871
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English (en)
Japanese (ja)
Inventor
雄太 松本
親扶 岡本
潤 斉藤
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シャープ株式会社
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Priority claimed from JP2015185469A external-priority patent/JP2017059763A/ja
Priority claimed from JP2015185467A external-priority patent/JP2017059761A/ja
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Publication of WO2017047310A1 publication Critical patent/WO2017047310A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • One embodiment of the present invention relates to a photoelectric conversion element and a method for manufacturing the photoelectric conversion element.
  • Patent Document 1 describes a method for manufacturing a photoelectric conversion element including a step of patterning a p-type amorphous semiconductor layer and an n-type amorphous semiconductor layer formed on a substrate by etching.
  • the surface of the substrate is exposed by etching the n-type amorphous semiconductor layer formed on the substrate. Contaminants may adhere to the exposed substrate surface.
  • the surface of the substrate may be roughened by the etching of the n-type amorphous semiconductor layer. Therefore, there has been a problem that the characteristics and reliability of the photoelectric conversion element deteriorate.
  • One embodiment of the present invention has been made in view of the above problems, and an object thereof is to provide a photoelectric conversion element having improved characteristics and reliability and a method for manufacturing the photoelectric conversion element.
  • a photoelectric conversion element is provided on a semiconductor substrate having a first surface and a second surface opposite to the first surface, and on the second surface.
  • a first amorphous semiconductor layer having a first conductivity type, a first amorphous semiconductor region having a first conductivity type, and a first surface.
  • a second amorphous semiconductor region having a second conductivity type different from the first conductivity type.
  • the first amorphous semiconductor region includes a first impurity having a first conductivity type.
  • the second amorphous semiconductor region includes a second impurity having the second conductivity type.
  • the first amorphous semiconductor layer, the first amorphous semiconductor region, and the second amorphous semiconductor region constitute one layer that extends continuously.
  • a photoelectric conversion element includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, and a tunnel dielectric layer provided on the second surface
  • a first amorphous semiconductor layer having an i-type and provided on the tunnel dielectric layer; and a first amorphous semiconductor having a first conductivity type provided on the tunnel dielectric layer.
  • the first amorphous semiconductor region includes a first impurity having a first conductivity type.
  • the second amorphous semiconductor region includes a second impurity having the second conductivity type.
  • the first amorphous semiconductor layer, the first amorphous semiconductor region, and the second amorphous semiconductor region constitute one layer that extends continuously.
  • the manufacturing method of the photoelectric conversion element of the 3rd aspect of this invention has i type on the 2nd surface of the semiconductor substrate which has the 1st surface and the 2nd surface on the opposite side to the 1st surface.
  • the formation of the first amorphous semiconductor region in the first amorphous semiconductor layer means that the first impurity having the first conductivity type is added to the first portion of the first amorphous semiconductor layer. Including doping.
  • the formation of the second amorphous semiconductor region in the first amorphous semiconductor layer has a second conductivity type in the second portion of the first amorphous semiconductor layer different from the first portion. Doping with a second impurity.
  • a method for manufacturing a photoelectric conversion element comprising: forming a tunnel dielectric layer on a second surface of a semiconductor substrate having a first surface and a second surface opposite to the first surface. Forming a first amorphous semiconductor layer having i-type on the tunnel dielectric layer, and having a first conductivity type in the first amorphous semiconductor layer. Forming an amorphous semiconductor region, and forming a second amorphous semiconductor region having a second conductivity type different from the first conductivity type in the first amorphous semiconductor layer.
  • the formation of the first amorphous semiconductor region in the first amorphous semiconductor layer means that the first impurity having the first conductivity type is added to the first portion of the first amorphous semiconductor layer. Including doping.
  • the formation of the second amorphous semiconductor region in the first amorphous semiconductor layer has a second conductivity type in the second portion of the first amorphous semiconductor layer different from the first portion. Doping with a second impurity.
  • a photoelectric conversion element having improved characteristics and reliability can be provided.
  • a method for manufacturing a photoelectric conversion element having improved characteristics and reliability can be provided.
  • FIG. 6 is a schematic plan view of a photoelectric conversion element according to Embodiments 1 to 6.
  • FIG. FIG. 2 is a schematic cross-sectional view of the photoelectric conversion element according to Embodiments 1 to 3 along a cross-sectional line II-II shown in FIG. It is a schematic sectional drawing which shows 1 process in the manufacturing method of the photoelectric conversion element which concerns on Embodiment 1 to Embodiment 6 and Embodiment 9 to Embodiment 14.
  • FIG. FIG. 6 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 3 in the method for manufacturing the photoelectric conversion element according to Embodiment 1 to Embodiment 6 and Embodiment 9 to Embodiment 14.
  • FIG. 5 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 4 in the method for manufacturing the photoelectric conversion element according to Embodiment 1 to Embodiment 6.
  • FIG. 6 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 5 in the method for manufacturing the photoelectric conversion element according to Embodiment 1 to Embodiment 6. It is a schematic sectional drawing which shows the next process of the process shown in FIG. 6 in the manufacturing method of the photoelectric conversion element which concerns on Embodiment 1 to Embodiment 6.
  • FIG. FIG. 8 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 7 in the method for manufacturing the photoelectric conversion element according to Embodiment 1.
  • FIG. 8 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 7 in the method for manufacturing the photoelectric conversion element according to Embodiment 1.
  • FIG. 9 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 8 in the method for manufacturing the photoelectric conversion element according to Embodiment 1.
  • FIG. 8 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 7 in the method for manufacturing a photoelectric conversion element according to Embodiment 2 and Embodiment 5.
  • FIG. 11 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 10 in the method for manufacturing a photoelectric conversion element according to Embodiment 2.
  • FIG. 8 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 7 in the method for manufacturing a photoelectric conversion element according to Embodiment 3.
  • FIG. 13 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 12 in the method for manufacturing the photoelectric conversion element according to Embodiment 3.
  • FIG. 7 is a schematic cross-sectional view of the photoelectric conversion element according to any of Embodiments 4 to 6 along a cross-sectional line XIV-XIV shown in FIG.
  • FIG. 8 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 7 in the method for manufacturing a photoelectric conversion element according to Embodiment 4.
  • FIG. 16 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 15 in the method for manufacturing the photoelectric conversion element according to Embodiment 4.
  • FIG. 11 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 10 in the method for manufacturing the photoelectric conversion element according to Embodiment 5.
  • FIG. 8 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 7 in the method for manufacturing a photoelectric conversion element according to Embodiment 6.
  • FIG. 19 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 18 in the method for manufacturing the photoelectric conversion element according to Embodiment 6.
  • 10 is a schematic plan view of a photoelectric conversion element according to Embodiments 7 and 8. FIG. FIG. FIG.
  • FIG. 21 is a schematic cross sectional view of the photoelectric conversion element according to Embodiment 7 taken along a cross sectional line XXI-XXI shown in FIG.
  • FIG. 21 is a schematic cross sectional view of the photoelectric conversion element according to Embodiment 8 taken along a cross sectional line XXII-XXII shown in FIG. It is a schematic plan view of the photoelectric conversion element according to the ninth to fourteenth embodiments.
  • FIG. 24 is a schematic cross-sectional view of the photoelectric conversion element according to any of Embodiments 9 to 11 taken along a cross-sectional line XXIV-XXIV shown in FIG. It is a schematic sectional drawing which shows the next process of the process shown in FIG.
  • FIG. 28 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 27 in the method for manufacturing a photoelectric conversion element according to the ninth to fourteenth embodiments.
  • FIG. 29 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG.
  • FIG. 30 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 29 in the method for manufacturing the photoelectric conversion element according to Embodiment 9.
  • FIG. 29 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 28 in the method for manufacturing the photoelectric conversion element according to Embodiment 10 and Embodiment 13.
  • FIG. 32 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 31 in the method for manufacturing a photoelectric conversion element according to the tenth embodiment.
  • FIG. 29 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG.
  • FIG. 34 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 33 in the method for manufacturing a photoelectric conversion element according to the eleventh embodiment.
  • 24 is a schematic cross-sectional view of the photoelectric conversion element according to any of the twelfth to fourteenth embodiments, taken along a cross-sectional line XXXV-XXXV shown in FIG.
  • FIG. 29 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 28 in the method for manufacturing a photoelectric conversion element according to the twelfth embodiment.
  • FIG. 37 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG.
  • FIG. 32 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 31 in the method for manufacturing the photoelectric conversion element according to Embodiment 13.
  • FIG. 29 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 28 in the method for manufacturing the photoelectric conversion element according to Embodiment 14.
  • FIG. 40 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 39 in the method for manufacturing the photoelectric conversion element according to Embodiment 14. It is a schematic plan view of the photoelectric conversion element according to the fifteenth and sixteenth embodiments.
  • FIG. 32 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 31 in the method for manufacturing the photoelectric conversion element according to Embodiment 13.
  • FIG. 29 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 28 in the method for manufacturing the photoelectric conversion element according to Embodiment 14.
  • FIG. 40 is a schematic cross-section
  • FIG. 42 is a schematic cross sectional view of the photoelectric conversion element according to Embodiment 15 taken along a cross sectional line LXII-LXII shown in FIG. 41.
  • FIG. 42 is a schematic cross sectional view of the photoelectric conversion element according to Embodiment 16 taken along a cross sectional line LXIII-LXIII shown in FIG. 41.
  • the photoelectric conversion element 1 which concerns on Embodiment 1 is demonstrated.
  • the photoelectric conversion element 1 of the present embodiment includes a semiconductor substrate 11, a first amorphous semiconductor layer 15, a first amorphous semiconductor region 16, a second amorphous semiconductor region 17, One electrode 18 and a second electrode 19 are mainly provided.
  • the semiconductor substrate 11 may be an n-type or p-type semiconductor substrate. In the present embodiment, an n-type single crystal silicon substrate is used as the semiconductor substrate 11.
  • the semiconductor substrate 11 has a first surface 11a and a second surface 11b opposite to the first surface 11a.
  • the first surface 11a of the semiconductor substrate 11 may be a light incident surface.
  • the first surface 11a and the second surface 11b of the semiconductor substrate 11 have a first direction (for example, x direction) and a second direction (for example, y direction) that intersects the first direction (for example, x direction).
  • the thickness direction of the semiconductor substrate 11 is a third direction (for example, z direction) that intersects the first direction (for example, x direction) and the second direction (for example, y direction).
  • the photoelectric conversion element 1 of the present embodiment includes the first amorphous semiconductor layer 15 having i-type on the second surface 11 b of the semiconductor substrate 11.
  • An i-type is formed between the first amorphous semiconductor region 16 and the second surface 11b of the semiconductor substrate 11 and between the second amorphous semiconductor region 17 and the second surface 11b of the semiconductor substrate 11.
  • the first amorphous semiconductor layer 15 may be provided. Specifically, the first amorphous semiconductor layer 15 may be in contact with the second surface 11 b of the semiconductor substrate 11.
  • the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 17 are alternately arranged, the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 16
  • the first amorphous semiconductor layer 15 may exist between the amorphous semiconductor region 17 and the amorphous semiconductor region 17.
  • the first amorphous semiconductor region 16 having the first conductivity type and the second amorphous semiconductor region 17 having the second conductivity type are formed by the first amorphous semiconductor layer 15 having the i type. It may be separated.
  • an i-type amorphous silicon film is used as the first amorphous semiconductor layer 15.
  • the first amorphous semiconductor layer 15 having i-type carriers generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 are formed on the second surface 11 b of the semiconductor substrate 11. Recombination can be suppressed.
  • the i-type first amorphous semiconductor layer 15 can improve the passivation characteristics of the photoelectric conversion element 1.
  • amorphous semiconductor means not only an amorphous semiconductor in which dangling bonds of atoms constituting the semiconductor are not terminated with hydrogen, but also hydrogenated amorphous silicon and the like. Also included is an amorphous semiconductor in which dangling bonds of atoms constituting the semiconductor are terminated with hydrogen.
  • i-type semiconductor is not only a completely intrinsic semiconductor but also a sufficiently low concentration (the n-type impurity concentration is less than 1 ⁇ 10 15 / cm 3 and the p-type impurity concentration is 1 ⁇ 10
  • a semiconductor mixed with n-type or p-type impurities of less than 15 / cm 3 is also included.
  • the photoelectric conversion element 1 of the present embodiment is provided in the first portion of the first amorphous semiconductor layer 15 and includes the first amorphous semiconductor region 16 having the first conductivity type.
  • the photoelectric conversion element 1 of the present embodiment is provided on the second surface 11b of the semiconductor substrate 11 and includes a first amorphous semiconductor region 16 having a first conductivity type.
  • the first amorphous semiconductor region 16 includes a first impurity having the first conductivity type.
  • the first amorphous semiconductor region 16 may be an n-type or p-type amorphous semiconductor region.
  • the first impurity may be an n-type impurity such as phosphorus or a p-type impurity such as boron.
  • the first impurity is an n-type impurity such as phosphorus
  • the first amorphous semiconductor region 16 is an n-type amorphous silicon film.
  • the first amorphous semiconductor region 16 may be provided in a stripe shape extending in the second direction (for example, the y direction).
  • the photoelectric conversion element 1 of the present embodiment is provided in a second portion of the first amorphous semiconductor layer 15 different from the first portion, and has a second amorphous type having a second conductivity type.
  • a semiconductor region 17 is provided.
  • the photoelectric conversion element 1 of the present embodiment is provided on the second surface 11b of the semiconductor substrate 11 and includes a second amorphous semiconductor region 17 having a second conductivity type.
  • the first amorphous semiconductor layer 15, the first amorphous semiconductor region 16, and the second amorphous semiconductor region 17 constitute one layer that extends continuously.
  • the surfaces of the first amorphous semiconductor layer 15, the first amorphous semiconductor region 16, and the second amorphous semiconductor region 17 on the side opposite to the semiconductor substrate 11 are continuous one You may comprise the surface.
  • the first direction for example, the x direction
  • the second amorphous semiconductor regions 17 The amorphous semiconductor region 16 is not overlapped.
  • the second amorphous semiconductor region 17 includes a second impurity having the second conductivity type.
  • the second amorphous semiconductor region 17 may be a p-type or n-type amorphous semiconductor region.
  • the second impurity may be a p-type impurity such as boron or an n-type impurity such as phosphorus.
  • the second impurity is a p-type impurity such as boron
  • the second amorphous semiconductor region 17 is a p-type amorphous silicon film.
  • the second amorphous semiconductor region 17 may be provided in a stripe shape extending in the second direction (for example, the y direction).
  • the photoelectric conversion element 1 of the present embodiment includes a first electrode 18 that is electrically connected to the first amorphous semiconductor region 16.
  • the first electrode 18 may be provided on the second surface 11 b of the semiconductor substrate 11. More specifically, the first electrode 18 may be provided on the first amorphous semiconductor region 16.
  • the first electrode 18 may be provided in a stripe shape extending in the second direction (for example, the y direction).
  • a metal electrode may be exemplified as the first electrode 18.
  • silver (Ag) is used as the first electrode 18.
  • the first electrode 18 may be an n-type electrode.
  • the photoelectric conversion element 1 of this embodiment includes a second electrode 19 that is electrically connected to the second amorphous semiconductor region 17.
  • the second electrode 19 may be provided on the second surface 11 b of the semiconductor substrate 11. More specifically, the second electrode 19 may be provided on the second amorphous semiconductor region 17.
  • the second electrode 19 may be provided in a stripe shape extending in the second direction (for example, the y direction).
  • a metal electrode may be exemplified as the second electrode 19.
  • silver (Ag) is used as the second electrode 19.
  • the second electrode 19 may be a p-type electrode.
  • the semiconductor substrate 11 and the first amorphous semiconductor region 16 are heterojunction through the first amorphous semiconductor layer 15, and the semiconductor substrate 11 and the second amorphous semiconductor region 16 are connected to each other.
  • the amorphous semiconductor region 17 is heterojunction with the first amorphous semiconductor layer 15. Therefore, the photoelectric conversion element 1 having improved passivation characteristics and a high open circuit voltage V OC can be obtained. According to the photoelectric conversion element 1 of the present embodiment, the efficiency of converting light energy into electrical energy can be improved.
  • the first surface 11a of the semiconductor substrate 11 may include an uneven structure. Light enters the photoelectric conversion element 1 from the first surface 11a side.
  • the concavo-convex structure on the first surface 11a of the semiconductor substrate 11 that is the light incident surface reflection of incident light on the first surface 11a of the semiconductor substrate 11 can be suppressed, and more Light can enter the photoelectric conversion element 1.
  • the efficiency of converting light energy into electric energy in the photoelectric conversion element 1 can be improved.
  • the photoelectric conversion element 1 of the present embodiment may include an i-type second amorphous semiconductor layer 12 on the first surface 11 a of the semiconductor substrate 11.
  • an i-type second amorphous semiconductor layer 12 on the first surface 11 a of the semiconductor substrate 11.
  • the photoelectric conversion element 1 of the present embodiment may include a third amorphous semiconductor layer 13 having the same conductivity type as the semiconductor substrate 11 on the first surface 11 a of the semiconductor substrate 11.
  • a third amorphous semiconductor layer 13 having the same conductivity type as that of the semiconductor substrate 11 may be provided on the second amorphous semiconductor layer 12 having i type.
  • the third amorphous semiconductor layer 13 can be an n-type or p-type amorphous semiconductor layer.
  • an n-type amorphous silicon film is used as the third amorphous semiconductor layer 13.
  • the third amorphous semiconductor layer 13 having the same conductivity type as the semiconductor substrate 11 may function as a surface electric field layer.
  • the third amorphous semiconductor layer 13 having the same conductivity type as that of the semiconductor substrate 11 generates an electric field in the vicinity of the first surface 11a of the semiconductor substrate 11, and an energy band is generated in the vicinity of the first surface 11a of the semiconductor substrate 11. Curve. Carriers approaching the first surface 11 a of the semiconductor substrate 11 are pushed back into the semiconductor substrate 11 by the electric field and the curvature of the energy band. In the first surface 11a of the semiconductor substrate 11, recombination of carriers can be suppressed.
  • a dielectric layer 14 may be provided on the first surface 11 a of the semiconductor substrate 11.
  • the dielectric layer 14 may be composed of a single layer or a plurality of layers. Examples of the material of the dielectric layer 14 include silicon nitride (SiN x ) and silicon oxide (SiO x ).
  • the dielectric layer 14 may function as an antireflection film.
  • the dielectric layer 14 may function as a passivation film.
  • a semiconductor substrate 11 having a first surface 11a and a second surface 11b opposite to the first surface 11a is prepared.
  • an uneven structure may be formed on first surface 11 a of semiconductor substrate 11.
  • the first surface 11a of the semiconductor substrate 11 which is an n-type single crystal silicon substrate is anisotropically etched using potassium hydroxide (KOH), whereby the first surface 11a of the semiconductor substrate 11 is uneven.
  • KOH potassium hydroxide
  • i-type second amorphous semiconductor layer 12 may be formed on first surface 11 a of semiconductor substrate 11.
  • a third amorphous semiconductor layer 13 having the same conductivity type as that of the semiconductor substrate 11 may be formed on the first surface 11 a of the semiconductor substrate 11.
  • a third amorphous semiconductor layer 13 having the same conductivity type as that of the semiconductor substrate 11 may be formed on the i-type second amorphous semiconductor layer 12.
  • a method for forming the second amorphous semiconductor layer 12 and the third amorphous semiconductor layer 13 is not particularly limited, and may be, for example, a plasma chemical vapor deposition (CVD) method.
  • CVD plasma chemical vapor deposition
  • dielectric layer 14 may be formed on first surface 11 a of semiconductor substrate 11. Specifically, the dielectric layer 14 may be formed on the third amorphous semiconductor layer 13 having the same conductivity type as the semiconductor substrate 11.
  • the formation method of the dielectric layer 14 is not particularly limited, but may be, for example, a plasma chemical vapor deposition (CVD) method.
  • the first amorphous semiconductor layer 15 having i-type is formed on the second surface 11b of the semiconductor substrate 11.
  • a method for forming the first amorphous semiconductor layer 15 is not particularly limited, and may be, for example, a plasma chemical vapor deposition (CVD) method.
  • a first amorphous semiconductor region 16 having a first conductivity type is formed in first amorphous semiconductor layer 15. Forming the first amorphous semiconductor region 16 in the first amorphous semiconductor layer 15 means that the first portion of the first amorphous semiconductor layer 15 has the first conductivity type. Doping with impurities.
  • doping the first portion of the first amorphous semiconductor layer 15 with the first impurity means that the first portion of the first amorphous semiconductor layer 15 is doped with the first impurity.
  • Ion implantation may be included. That is, the first impurity may be doped in the first portion of the first amorphous semiconductor layer 15 by ion implantation.
  • the first portion of the first amorphous semiconductor layer 15 is irradiated with the first ion beam 21 of the first impurity to the first portion of the first amorphous semiconductor layer 15.
  • the portion may be doped with a first impurity.
  • the first amorphous semiconductor region 16 having the first conductivity type may be formed in the first portion of the first amorphous semiconductor layer 15.
  • a first mask 22 having an opening corresponding to the first portion of the first amorphous semiconductor layer 15 and covering the other portion of the first amorphous semiconductor layer 15 may be used. .
  • a second amorphous semiconductor region 17 having a second conductivity type different from the first conductivity type is formed in first amorphous semiconductor layer 15.
  • the formation of the second amorphous semiconductor region 17 in the first amorphous semiconductor layer 15 causes the second portion of the first amorphous semiconductor layer 15 different from the first portion to Doping with a second impurity having a conductivity type.
  • doping the second portion of the first amorphous semiconductor layer 15 with the second impurity means that the second portion of the first amorphous semiconductor layer 15 is doped with the second impurity.
  • Ion implantation may be included. That is, the second impurity may be doped in the second portion of the first amorphous semiconductor layer 15 by ion implantation.
  • the second portion of the first amorphous semiconductor layer 15 is irradiated with the second ion beam 23 of the second impurity to the second portion of the first amorphous semiconductor layer 15.
  • the portion may be doped with a second impurity.
  • the second amorphous semiconductor region 17 having the second conductivity type may be formed in the second portion of the first amorphous semiconductor layer 15.
  • a second mask 24 having an opening corresponding to the second portion of the first amorphous semiconductor layer 15 and covering the other portion of the first amorphous semiconductor layer 15 may be used.
  • the first amorphous semiconductor layer 15 may exist between the second surface 11 b of the semiconductor substrate 11 and the first amorphous semiconductor region 16.
  • a first amorphous semiconductor layer 15 may exist between the second surface 11 b of the semiconductor substrate 11 and the second amorphous semiconductor region 17.
  • the first direction for example, the x direction
  • the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 16 are alternately arranged
  • the first amorphous semiconductor layer 15 may exist between the amorphous semiconductor region 17 and the amorphous semiconductor region 17.
  • the first amorphous semiconductor region 16 having the first conductivity type and the second amorphous semiconductor region 17 having the second conductivity type are formed by the first amorphous semiconductor layer 15 having the i type. It may be separated.
  • the first impurity contained in the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 are In order to activate the contained second impurity, the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 may be annealed. Then, a first electrode 18 that is electrically connected to the first amorphous semiconductor region 16 is formed on the second surface 11 b of the semiconductor substrate 11. Specifically, the first electrode 18 is formed on the first amorphous semiconductor region 16. A second electrode 19 that is electrically connected to the second amorphous semiconductor region 17 is formed on the second surface 11 b of the semiconductor substrate 11. Specifically, the second electrode 19 is formed on the second amorphous semiconductor region 17.
  • the photoelectric conversion element 1 of the present embodiment shown in FIGS. 1 and 2 can be manufactured.
  • the photoelectric conversion element 1 of this Embodiment and its manufacturing method is demonstrated.
  • the photoelectric conversion element 1 of the present embodiment is provided on a semiconductor substrate 11 having a first surface 11a and a second surface 11b opposite to the first surface 11a, and the second surface 11b, On the first amorphous semiconductor layer 15 having i-type and the second surface 11b, the first amorphous semiconductor region 16 having the first conductivity type, and on the second surface 11b And a second amorphous semiconductor region 17 having a second conductivity type different from the first conductivity type.
  • the first amorphous semiconductor region 16 includes a first impurity having the first conductivity type.
  • the second amorphous semiconductor region 17 includes a second impurity having the second conductivity type.
  • the first amorphous semiconductor layer 15, the first amorphous semiconductor region 16, and the second amorphous semiconductor region 17 constitute one layer that extends continuously.
  • a structure that can be manufactured without exposing the second surface 11b of the semiconductor substrate 11 after the first amorphous semiconductor layer 15 is formed on the second surface 11b of the semiconductor substrate 11 is described in this embodiment.
  • the photoelectric conversion element 1 is provided.
  • a structure that can be manufactured without contamination of the second surface 11b of the semiconductor substrate 11 or roughening of the second surface 11b of the semiconductor substrate 11 due to etching of the amorphous semiconductor layer is described in this embodiment.
  • the photoelectric conversion element 1 is provided. According to the photoelectric conversion element 1 of the present embodiment, a photoelectric conversion element having improved characteristics and reliability can be provided.
  • the photoelectric conversion element 1 includes the second surface 11b of the semiconductor substrate 11 and the first amorphous semiconductor region 16, and the second surface 11b of the semiconductor substrate 11 and the second amorphous semiconductor region 11.
  • a first amorphous semiconductor layer 15 may exist between the semiconductor region 17.
  • carriers generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 are formed on the second surface 11 b of the semiconductor substrate 11. Recombination can be suppressed.
  • the photoelectric conversion element 1 of the present embodiment the passivation characteristics and the efficiency of converting light energy into electric energy can be improved.
  • the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 are arranged in the direction in which the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 are alternately arranged.
  • the first amorphous semiconductor layer 15 may exist between the second amorphous semiconductor region 17.
  • the first amorphous semiconductor region 16 having the first conductivity type and the second amorphous semiconductor region 17 having the second conductivity type are formed by the first amorphous semiconductor layer 15 having the i type. It may be separated. According to the photoelectric conversion element of the present embodiment, the efficiency of converting light energy into electric energy can be improved.
  • the photoelectric conversion element 1 is provided on the second surface 11b of the semiconductor substrate 11, and the first electrode 18 electrically connected to the first amorphous semiconductor region 16 and the semiconductor A second electrode 19 provided on the second surface 11 b of the substrate 11 and electrically connected to the second amorphous semiconductor region 17 may be further provided.
  • the first electrode 18 and the second electrode 19 are not provided on the first surface 11a side of the semiconductor substrate 11 which is a light incident surface. Light incident on the photoelectric conversion element 1 is not blocked by the first electrode 18 and the second electrode 19. According to the photoelectric conversion element 1 of the present embodiment, a high short-circuit current J SC can be obtained, and the efficiency of converting light energy into electric energy can be improved.
  • the photoelectric conversion element 1 of the present embodiment may further include a dielectric layer 14 on the first surface 11a of the semiconductor substrate 11.
  • the dielectric layer 14 functions as an antireflection film
  • the dielectric layer 14 can cause more light to enter the photoelectric conversion element 1.
  • the efficiency of converting light energy into electrical energy can be improved.
  • the dielectric layer 14 functions as a passivation film
  • the carrier generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 is the first dielectric layer 14 of the semiconductor substrate 11. It is possible to suppress recombination on the surface 11a.
  • the efficiency of converting light energy into electrical energy can be improved.
  • the photoelectric conversion element 1 of the present embodiment may further include an i-type second amorphous semiconductor layer 12 on the first surface 11 a of the semiconductor substrate 11.
  • the second amorphous semiconductor layer 12 having i-type carriers generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 are formed on the first surface 11 a of the semiconductor substrate 11. Recombination can be suppressed.
  • the passivation characteristics and the efficiency of converting light energy into electric energy can be improved.
  • the photoelectric conversion element 1 of the present embodiment may further include a third amorphous semiconductor layer 13 having the same conductivity type as that of the semiconductor substrate 11 on the first surface 11 a of the semiconductor substrate 11.
  • the third amorphous semiconductor layer 13 having the same conductivity type as that of the semiconductor substrate 11 has the first surface 11 a of the semiconductor substrate 11 among the carriers generated in the semiconductor substrate 11 when light enters the photoelectric conversion element 1.
  • the carrier approaching can be pushed back into the semiconductor substrate 11.
  • the third amorphous semiconductor layer 13 can suppress recombination of this carrier on the first surface 11 a of the semiconductor substrate 11. According to the photoelectric conversion element 1 of the present embodiment, the passivation characteristics and the efficiency of converting light energy into electric energy can be improved.
  • the first surface 11a of the semiconductor substrate 11 may include an uneven structure.
  • the concavo-convex structure on the first surface 11 a of the semiconductor substrate 11 that is the light incident surface more light can be incident into the photoelectric conversion element 1.
  • the efficiency of converting light energy into electrical energy can be improved.
  • i is formed on the second surface 11b of the semiconductor substrate 11 having the first surface 11a and the second surface 11b opposite to the first surface 11a.
  • the formation of the first amorphous semiconductor region 16 in the first amorphous semiconductor layer 15 means that the first portion of the first amorphous semiconductor layer 15 has the first conductivity type. Doping with one impurity.
  • the formation of the second amorphous semiconductor region 17 in the first amorphous semiconductor layer 15 causes the second portion of the first amorphous semiconductor layer 15 different from the first portion to Doping with a second impurity having a conductivity type.
  • the photoelectric conversion element 1 can be manufactured without exposing the second surface 11b of the semiconductor substrate 11.
  • the photoelectric conversion element 1 can be manufactured without the contaminants adhering to the second surface 11b of the semiconductor substrate 11 or the second surface 11b of the semiconductor substrate 11 being roughened by etching of the amorphous semiconductor layer. According to the method for manufacturing the photoelectric conversion element 1 of the present embodiment, a photoelectric conversion element having improved characteristics and reliability can be manufactured.
  • the second surface 11b of the semiconductor substrate 11 and the first amorphous semiconductor region 16 and the second surface 11b of the semiconductor substrate 11 and the second surface A first amorphous semiconductor layer 15 may exist between the amorphous semiconductor region 17.
  • the first amorphous semiconductor layer 15 having i-type carriers generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 are formed on the second surface 11 b of the semiconductor substrate 11. Recombination can be suppressed.
  • the photoelectric conversion element with which the passivation characteristic and the efficiency which converts light energy into electrical energy were improved can be manufactured.
  • the direction in which the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 17 are alternately arranged (first direction, for example, x direction) ),
  • the first amorphous semiconductor layer 15 may exist between the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17.
  • the first amorphous semiconductor region 16 having the first conductivity type and the second amorphous semiconductor region 17 having the second conductivity type are formed by the first amorphous semiconductor layer 15 having the i type. It may be separated.
  • a photoelectric conversion element with improved efficiency of converting light energy into electric energy can be manufactured.
  • doping the first impurity in the first portion of the first amorphous semiconductor layer 15 means that the first amorphous semiconductor layer 15 Implanting a first impurity into the portion may be included.
  • Doping the second impurity in the second portion of the first amorphous semiconductor layer 15 means that the second impurity is ion-implanted into the second portion of the first amorphous semiconductor layer 15. May be included.
  • a photoelectric conversion element having improved characteristics and reliability can be manufactured by a simple process.
  • the first electrode 18 that is electrically connected to the first amorphous semiconductor region 16 is formed on the second surface 11 b of the semiconductor substrate 11. And forming a second electrode 19 electrically connected to the second amorphous semiconductor region 17 on the second surface 11 b of the semiconductor substrate 11.
  • the first electrode 18 and the second electrode 19 are photoelectric elements that are not provided on the first surface 11a side of the semiconductor substrate 11 that is the light incident surface.
  • the conversion element 1 can be manufactured. Light incident on the photoelectric conversion element 1 is not blocked by the first electrode 18 and the second electrode 19.
  • a photoelectric conversion element having a high short-circuit current J SC and improved efficiency in converting light energy into electric energy can be manufactured.
  • the method for manufacturing the photoelectric conversion element 1 according to the present embodiment may further include forming the dielectric layer 14 on the first surface 11 a of the semiconductor substrate 11.
  • the dielectric layer 14 functions as an antireflection film
  • the dielectric layer 14 can cause more light to enter the photoelectric conversion element 1.
  • a photoelectric conversion element with improved efficiency of converting light energy into electric energy can be manufactured.
  • the dielectric layer 14 functions as a passivation film
  • the carrier generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 is the first dielectric layer 14 of the semiconductor substrate 11. It is possible to suppress recombination on the surface 11a.
  • a photoelectric conversion element with improved efficiency of converting light energy into electric energy can be manufactured.
  • the method for manufacturing the photoelectric conversion element 1 of the present embodiment may further include forming the second amorphous semiconductor layer 12 having i-type on the first surface 11 a of the semiconductor substrate 11.
  • the second amorphous semiconductor layer 12 having i-type carriers generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 are formed on the first surface 11 a of the semiconductor substrate 11. Recombination can be suppressed.
  • the photoelectric conversion element with which the passivation characteristic and the efficiency which converts light energy into electrical energy were improved can be manufactured.
  • the method for manufacturing the photoelectric conversion element 1 according to the present embodiment further includes forming the third amorphous semiconductor layer 13 having the same conductivity type as the semiconductor substrate 11 on the first surface 11 a of the semiconductor substrate 11. You may prepare.
  • the third amorphous semiconductor layer 13 having the same conductivity type as that of the semiconductor substrate 11 has the first surface 11 a of the semiconductor substrate 11 among the carriers generated in the semiconductor substrate 11 when light enters the photoelectric conversion element 1.
  • the carrier approaching can be pushed back into the semiconductor substrate 11.
  • the third amorphous semiconductor layer 13 can suppress recombination of this carrier on the first surface 11 a of the semiconductor substrate 11. According to the manufacturing method of the photoelectric conversion element 1 of this Embodiment, the photoelectric conversion element with which the passivation characteristic and the efficiency which converts light energy into electrical energy were improved can be manufactured.
  • the method for manufacturing the photoelectric conversion element 1 according to the present embodiment may further include forming a concavo-convex structure on the first surface 11 a of the semiconductor substrate 11.
  • a concavo-convex structure on the first surface 11 a of the semiconductor substrate 11, which is the light incident surface, more light can be incident into the photoelectric conversion element 1. Therefore, according to the manufacturing method of the photoelectric conversion element 1 of this Embodiment, the photoelectric conversion element in which the efficiency which converts light energy into electrical energy was improved can be manufactured.
  • the photoelectric conversion element 1 of the present embodiment has a configuration similar to that of the photoelectric conversion element 1 of the first embodiment.
  • the manufacturing method of the photoelectric conversion element 1 of this Embodiment is fundamentally equipped with the process similar to the manufacturing method of the photoelectric conversion element 1 of Embodiment 1, it differs in the following points.
  • the first amorphous semiconductor layer 15 is doped with the first and second impurities by the ion implantation method.
  • doping the first impurity in the first portion of the first amorphous semiconductor layer 15 is the first amorphous semiconductor. Forming a first dopant-containing film including a first impurity on the layer, and removing the first impurity contained in the first dopant-containing film from the first amorphous semiconductor layer; Transition to the portion of the above.
  • doping the second impurity in the second portion of the first amorphous semiconductor layer 15 causes the first amorphous semiconductor layer 15 to be doped.
  • Forming the second dopant-containing film 27 containing the second impurity, and transferring the second impurity contained in the second dopant-containing film 27 to the second portion of the first amorphous semiconductor layer 15 It may further include.
  • the formation of the first dopant-containing film 26 containing the first impurity on the first amorphous semiconductor 15 layer means that the first part of the first amorphous semiconductor layer 15 A first doping paste containing a first impurity may be applied thereon. Transferring the first impurity contained in the first dopant-containing film 26 to the first portion of the first amorphous semiconductor layer 15 may include heat-treating the first doping paste.
  • the formation of the second dopant-containing film 27 containing the second impurity on the first amorphous semiconductor layer 15 means that the second impurity is formed on the second portion of the first amorphous semiconductor layer 15.
  • a second doping paste containing may be applied. Transferring the second impurity contained in the second dopant-containing film 27 to the second portion of the first amorphous semiconductor layer 15 may include heat-treating the second doping paste.
  • the second amorphous semiconductor layer 12, the third amorphous semiconductor layer 13, and the dielectric layer 14 are formed on the first surface 11 a of the semiconductor substrate 11.
  • the first amorphous semiconductor layer 15 is formed on the second surface 11 b of the semiconductor substrate 11.
  • a first dopant-containing film 26 containing a first impurity having the first conductivity type is formed on the first portion of the first amorphous semiconductor layer 15.
  • a second dopant-containing film 27 containing a second impurity having the second conductivity type is formed on the second portion of the amorphous semiconductor layer 15.
  • the first dopant-containing film 26 may be a first doping paste.
  • the second dopant-containing film 27 may be a second doping paste.
  • Examples of the first and second doping pastes include a doping paste containing an n-type impurity such as phosphorus and a doping paste containing a p-type impurity such as boron.
  • the doping paste containing an n-type impurity may include a phosphorus compound, a silicon oxide precursor, a solvent, and a thickener.
  • the doping paste containing an impurity having p-type may include a boron compound, a silicon oxide precursor, a solvent, and a thickener.
  • a first doping paste containing a first impurity having an n-type such as phosphorus is used as the first dopant-containing film 26, and a p-type material such as boron is used as the second dopant-containing film 27.
  • a second doping paste containing a second impurity having a mold may be used.
  • the first doping paste may be applied on the first portion of the first amorphous semiconductor layer 15 by inkjet, screen printing, or the like.
  • the second doping paste may be applied on the second portion of the first amorphous semiconductor layer 15 by inkjet, screen printing, or the like.
  • the first dopant-containing film 26 and the second dopant-containing film 27 are heat-treated so that the first impurity contained in the first dopant-containing film 26 is converted into the first amorphous semiconductor layer. 15, the second impurity contained in the second dopant-containing film 27 is transferred to the second portion of the first amorphous semiconductor layer 15.
  • the first dopant-containing film 26 and the second dopant-containing film 27 that are doping pastes are heat-treated at a temperature of, for example, 100 ° C. or more and 250 ° C. or less, so that the first dopant containing the doping paste is contained.
  • the first impurity contained in the film 26 is doped in the first portion of the first amorphous semiconductor layer 15, and the second impurity contained in the second dopant-containing film 27 that is a doping paste is the first impurity.
  • the second portion of the amorphous semiconductor layer 15 is doped.
  • the first amorphous semiconductor region 16 having the first conductivity type is formed in the first portion of the first amorphous semiconductor layer 15 having the i type, and the first amorphous semiconductor layer 15 of the first amorphous semiconductor layer 15 has the first conductivity type.
  • a second amorphous semiconductor region 17 having a second conductivity type can be formed in each of the two portions.
  • the first dopant-containing film 26 and the second dopant-containing film 27 may be heat-treated using a heating furnace, or the first dopant-containing film 26 and the second dopant-containing film 27 are irradiated with laser light.
  • the first dopant-containing film 26 and the second dopant-containing film 27 may be heat treated.
  • the first impurity in the first amorphous semiconductor region 16 and the second impurity in the second amorphous semiconductor region 17 are processed. Impurities can be activated. In order to further activate the first impurity in the first amorphous semiconductor region 16 and the second impurity in the second amorphous semiconductor region 17, the first amorphous semiconductor region 16 and the second impurity The two amorphous semiconductor regions 17 may be further annealed.
  • the remaining first dopant-containing film 26 and second dopant-containing film 27 use a mixed solution of sulfuric acid and hydrogen peroxide solution, a mixed solution of hydrochloric acid and hydrogen peroxide solution, or hydrofluoric acid. Removed. Subsequently, the first electrode 18 and the second electrode 19 are formed on the second surface 11 b of the semiconductor substrate 11. Thus, the photoelectric conversion element 1 of the present embodiment shown in FIGS. 1 and 2 can be manufactured.
  • the manufacturing method of the photoelectric conversion element 1 of the present embodiment has the same effect as the manufacturing method of the photoelectric conversion element 1 of the first embodiment, but differs in the following points.
  • doping the first impurity in the first portion of the first amorphous semiconductor layer 15 causes the first amorphous semiconductor layer 15 to be doped.
  • Forming the first dopant-containing film 26 containing the first impurity, and transferring the first impurity contained in the first dopant-containing film 26 to the first portion of the first amorphous semiconductor layer 15 May be included.
  • Doping the second portion of the first amorphous semiconductor layer 15 with the second impurity means that the second dopant-containing film 27 containing the second impurity is formed on the first amorphous semiconductor layer 15.
  • a photoelectric conversion element having improved characteristics and reliability can be manufactured by a simple process.
  • forming the first dopant-containing film 26 including the first impurity on the first amorphous semiconductor layer 15 is the first amorphous
  • a first doping paste containing a first impurity may be applied on the first portion of the semiconductor layer 15. Transferring the first impurity contained in the first dopant-containing film 26 to the first portion of the first amorphous semiconductor layer 15 may include heat-treating the first doping paste.
  • the formation of the second dopant-containing film 27 containing the second impurity on the first amorphous semiconductor layer 15 means that the second impurity is formed on the second portion of the first amorphous semiconductor layer 15.
  • a second doping paste containing may be applied. Transferring the second impurity contained in the second dopant-containing film 27 to the second portion of the first amorphous semiconductor layer 15 may include heat-treating the second doping paste.
  • doping the first impurity into the first portion of the first amorphous semiconductor layer 15 means that the first amorphous semiconductor layer 15 is doped. Applying a first doping paste containing a first impurity on the first portion and heat-treating the first doping paste. Doping the second portion of the first amorphous semiconductor layer 15 with the second impurity means that the second portion of the first amorphous semiconductor layer 15 contains the second impurity. Applying the doping paste and heat-treating the second doping paste may be included.
  • the first amorphous semiconductor region 16 and the first amorphous semiconductor region 16 can be formed in the first amorphous semiconductor layer 15 with high pattern accuracy. Two amorphous semiconductor regions 17 may be formed.
  • a doping paste as the first dopant-containing film 26 and the second dopant-containing film 27, the first dopant-containing film 26 and the second dopant film are formed on the first amorphous semiconductor layer 15 by inkjet, screen printing, or the like.
  • the dopant-containing film 27 can be formed. According to the manufacturing method of the photoelectric conversion element 1 of this Embodiment, the photoelectric conversion element which has the improved characteristic and reliability can be manufactured at a cheap and simple process.
  • the photoelectric conversion element 1 of the present embodiment has a configuration similar to that of the photoelectric conversion element 1 of the first embodiment.
  • the manufacturing method of the photoelectric conversion element 1 of this Embodiment is fundamentally equipped with the process similar to the manufacturing method of the photoelectric conversion element 1 of Embodiment 1, it differs in the following points.
  • the second impurity is doped into a part of the first amorphous semiconductor layer 15 by the ion implantation method.
  • doping the first impurity in the first portion of the first amorphous semiconductor layer 15 is the first amorphous semiconductor. Forming a first dopant-containing film including a first impurity on the layer, and removing the first impurity contained in the first dopant-containing film from the first amorphous semiconductor layer; Transition to the portion of the above.
  • doping the second impurity in the second portion of the first amorphous semiconductor layer 15 causes the first amorphous semiconductor layer 15 to be doped.
  • Forming the second dopant-containing film 27 containing the second impurity, and transferring the second impurity contained in the second dopant-containing film 27 to the second portion of the first amorphous semiconductor layer 15 It may further include.
  • transferring the first impurity contained in the first dopant-containing film 26 to the first portion of the first amorphous semiconductor layer 15 is one of the first dopant-containing films 26. Irradiation of the first laser beam 28 to the part may be included. The transfer of the second impurity contained in the second dopant-containing film 27 to the second portion of the first amorphous semiconductor layer 15 causes the second laser to be part of the second dopant-containing film 27. Irradiation with light 29 may be included. That is, the first and second impurities may be doped in the first and second portions of the first amorphous semiconductor layer 15 by laser doping, respectively.
  • the second amorphous semiconductor layer 12, the third amorphous semiconductor layer 13, and the dielectric layer 14 are formed on the first surface 11 a of the semiconductor substrate 11.
  • the first amorphous semiconductor layer 15 is formed on the second surface 11 b of the semiconductor substrate 11.
  • a first dopant-containing film 26 containing a first impurity having the first conductivity type is formed on the first amorphous semiconductor layer 15.
  • the first dopant-containing film 26 include phosphorus silicate glass (PSG), boron silicate glass (BSG), and polyboron film (PBF).
  • PSG phosphorus silicate glass
  • BSG boron silicate glass
  • PPF polyboron film
  • a part of the first dopant-containing film 26 is irradiated with the first laser light 28, and the first impurity contained in the first dopant-containing film 26 is changed into the first amorphous semiconductor layer 15. Transition to the first part.
  • a part of the first dopant-containing film 26 is locally heated by irradiating a part of the first dopant-containing film 26 with the first laser light 28. Therefore, in the first amorphous semiconductor layer 15, only the region corresponding to the portion irradiated with the first laser light 28 (that is, the first portion of the first amorphous semiconductor layer 15) The first impurity contained in one dopant-containing film 26 is doped.
  • the first amorphous semiconductor region 16 having the first conductivity type can be formed in the first portion of the first amorphous semiconductor layer 15 having the i type.
  • a part of the first dopant-containing film 26 and a first part of the first amorphous semiconductor layer 15 are formed. Heated locally.
  • the first laser beam 28 is irradiated to a part of the first dopant-containing film 26, the first impurity in the first amorphous semiconductor region 16 can be activated.
  • the remaining first dopant-containing film 26 is removed using a mixed solution of sulfuric acid and hydrogen peroxide solution, a mixed solution of hydrochloric acid and hydrogen peroxide solution, or hydrofluoric acid.
  • a second dopant-containing film 27 containing a second impurity having the second conductivity type is formed on first amorphous semiconductor layer 15.
  • the second dopant-containing film 27 include phosphorus silicate glass (PSG), boron silicate glass (BSG), and polyboron film (PBF).
  • PSG phosphorus silicate glass
  • BSG boron silicate glass
  • PPF polyboron film
  • boron silicate glass (BSG) is used as the second dopant-containing film 27.
  • a part of the second dopant-containing film 27 is irradiated with the second laser light 29, and the second impurity contained in the second dopant-containing film 27 is removed from the first amorphous semiconductor layer 15. Transition to the second part.
  • a part of the second dopant-containing film 27 is locally heated by irradiating a part of the second dopant-containing film 27 with the second laser light 29.
  • the first amorphous semiconductor layer 15 only the region corresponding to the portion irradiated with the second laser light 29 (that is, the second portion of the first amorphous semiconductor layer 15)
  • the second impurity contained in the dopant-containing film 27 is doped. In this way, the second amorphous semiconductor region 17 having the second conductivity type can be formed in the second portion of the first amorphous semiconductor layer 15 having the i type.
  • the second laser light 29 may have the same wavelength as the first laser light 28.
  • a part of the second dopant-containing film 27 and a second part of the first amorphous semiconductor layer 15 are formed. Heated locally. Therefore, when the second laser beam 29 is irradiated to a part of the second dopant-containing film 27, the second impurity in the second amorphous semiconductor region 17 can be activated.
  • the remaining second dopant-containing film 27 is removed using a mixed solution of sulfuric acid and hydrogen peroxide solution, a mixed solution of hydrochloric acid and hydrogen peroxide solution, or hydrofluoric acid.
  • the second amorphous semiconductor region 17 may be further annealed.
  • the first electrode 18 and the second electrode 19 are formed on the second surface 11 b of the semiconductor substrate 11.
  • the manufacturing method of the photoelectric conversion element 1 of the present embodiment has the same effect as the manufacturing method of the photoelectric conversion element 1 of the first embodiment, but differs in the following points.
  • the first impurity contained in the first dopant-containing film 26 is transferred to the first portion of the first amorphous semiconductor layer 15. Irradiation of the first laser beam 28 to a part of the one dopant-containing film 26 may be included.
  • the transfer of the second impurity contained in the second dopant-containing film 27 to the second portion of the first amorphous semiconductor layer 15 causes the second laser to be part of the second dopant-containing film 27.
  • Irradiation with light 29 may be included. That is, the first and second impurities may be doped in the first and second portions of the first amorphous semiconductor layer 15 by laser doping, respectively.
  • the laser doping method can diffuse the dopant in a shorter time than the method of diffusing the dopant using a heating furnace. According to the manufacturing method of the photoelectric conversion element 1 of this Embodiment, the photoelectric conversion element which has the improved characteristic and reliability can be manufactured at a cheap and simple process.
  • the photoelectric conversion element 2 of Embodiment 4 is demonstrated.
  • the photoelectric conversion element 2 of the present embodiment is basically the same as the photoelectric conversion element 1 of the first embodiment, but differs in the following points.
  • At least one of the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 extends over the entire thickness of the first amorphous semiconductor layer 15. May be present. At least one of the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 may be in contact with the second surface 11 b of the semiconductor substrate 11.
  • a method for manufacturing the photoelectric conversion element 2 according to Embodiment 4 will be described with reference to FIGS.
  • the manufacturing method of the photoelectric conversion element 2 of the present embodiment is basically the same as the manufacturing method of the photoelectric conversion element 1 of the first embodiment, but differs in the following points.
  • At least one of the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 is formed on the entire first amorphous semiconductor layer 15. It may exist over the thickness. At least one of the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 may be in contact with the second surface 11 b of the semiconductor substrate 11.
  • the second amorphous semiconductor layer 12, the third amorphous semiconductor layer 13, and the dielectric layer 14 are formed on the first surface 11 a of the semiconductor substrate 11.
  • the first amorphous semiconductor layer 15 is formed on the second surface 11 b of the semiconductor substrate 11.
  • a first amorphous semiconductor region 16 having the first conductivity type is formed in first amorphous semiconductor layer 15.
  • the first amorphous semiconductor region 16 may exist over the entire thickness of the first amorphous semiconductor layer 15.
  • the formation of the first amorphous semiconductor region 16 in the first amorphous semiconductor layer 15 is because the first amorphous semiconductor layer 15 is formed in the first portion of the first amorphous semiconductor layer 15. Doping with a first impurity having a first conductivity type over a total thickness of fifteen.
  • doping the first portion of the first amorphous semiconductor layer 15 with the first impurity means that the first portion of the first amorphous semiconductor layer 15 is doped with the first impurity.
  • Ion implantation may be included. That is, the first impurity may be doped in the first portion of the first amorphous semiconductor layer 15 over the entire thickness of the first amorphous semiconductor layer 15 by ion implantation.
  • the first portion of the first amorphous semiconductor layer 15 is irradiated with the first ion beam 21 of the first impurity to the first portion of the first amorphous semiconductor layer 15.
  • the portion may be doped with the first impurity over the entire thickness of the first amorphous semiconductor layer 15.
  • the first amorphous semiconductor region 16 having the first conductivity type is formed in the first portion of the first amorphous semiconductor layer 15 over the entire thickness of the first amorphous semiconductor layer 15. May be.
  • a first mask 22 having an opening corresponding to the first portion of the first amorphous semiconductor layer 15 and covering the other portion of the first amorphous semiconductor layer 15 may be used. .
  • a second amorphous semiconductor region 17 having a second conductivity type different from the first conductivity type is formed in first amorphous semiconductor layer 15.
  • the second amorphous semiconductor region 17 may exist over the entire thickness of the first amorphous semiconductor layer 15.
  • the formation of the second amorphous semiconductor region 17 in the first amorphous semiconductor layer 15 causes the second portion of the first amorphous semiconductor layer 15 different from the first portion to be in the first portion.
  • doping the second portion of the first amorphous semiconductor layer 15 with the second impurity means that the second portion of the first amorphous semiconductor layer 15 is doped with the second impurity.
  • Ion implantation may be included. That is, the second impurity may be doped in the second portion of the first amorphous semiconductor layer 15 over the entire thickness of the first amorphous semiconductor layer 15 by ion implantation.
  • the second portion of the first amorphous semiconductor layer 15 is irradiated with the second ion beam 23 of the second impurity to the second portion of the first amorphous semiconductor layer 15.
  • the portion may be doped with the second impurity over the entire thickness of the first amorphous semiconductor layer 15.
  • the second amorphous semiconductor region 17 having the second conductivity type is formed in the second portion of the first amorphous semiconductor layer 15 over the entire thickness of the first amorphous semiconductor layer 15. May be.
  • a second mask 24 having an opening corresponding to the second portion of the first amorphous semiconductor layer 15 and covering the other portion of the first amorphous semiconductor layer 15 may be used.
  • the first amorphous semiconductor region 16 may be in contact with the second surface 11 b of the semiconductor substrate 11.
  • the second amorphous semiconductor region 17 may be in contact with the second surface 11 b of the semiconductor substrate 11.
  • the first direction for example, the x direction
  • the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 16 are alternately arranged
  • the first amorphous semiconductor layer 15 may exist between the amorphous semiconductor region 17 and the amorphous semiconductor region 17.
  • the first amorphous semiconductor region 16 having the first conductivity type and the second amorphous semiconductor region 17 having the second conductivity type are formed by the first amorphous semiconductor layer 15 having the i type. It may be separated.
  • the first impurity contained in the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 are In order to activate the contained second impurity, the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 may be annealed.
  • the first electrode 18 that is electrically connected to the first amorphous semiconductor region 16 is formed on the second surface 11 b of the semiconductor substrate 11. Specifically, the first electrode 18 is formed on the first amorphous semiconductor region 16.
  • a second electrode 19 that is electrically connected to the second amorphous semiconductor region 17 is formed on the second surface 11 b of the semiconductor substrate 11. Specifically, the second electrode 19 is formed on the second amorphous semiconductor region 17.
  • the photoelectric conversion element 2 and its manufacturing method of the present embodiment have the same effects as the photoelectric conversion element 1 of the first embodiment and its manufacturing method, but are different in the following points.
  • At least one of the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 extends over the entire thickness of the first amorphous semiconductor layer 15. May be present.
  • at least one of the distance between the first amorphous semiconductor region 16 and the semiconductor substrate 11 and the distance between the second amorphous semiconductor region 17 and the semiconductor substrate 11 is reduced. obtain.
  • carriers corresponding to the first conductivity type of the first amorphous semiconductor region 16 are A single amorphous semiconductor region 16 can be collected with higher efficiency.
  • carriers corresponding to the second conductivity type of the second amorphous semiconductor region 17 are the first The two amorphous semiconductor regions 17 can be collected with higher efficiency. According to the photoelectric conversion element 2 of the present embodiment, the efficiency of converting light energy into electrical energy can be improved.
  • At least one of the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 is formed on the entire first amorphous semiconductor layer 15. It may exist over the thickness.
  • the distance between the first amorphous semiconductor region 16 and the semiconductor substrate 11 and the distance between the second amorphous semiconductor region 17 and the semiconductor substrate 11 are determined. At least one may be reduced.
  • carriers corresponding to the first conductivity type of the first amorphous semiconductor region 16 are A single amorphous semiconductor region 16 can be collected with higher efficiency.
  • carriers corresponding to the second conductivity type of the second amorphous semiconductor region 17 are the first The two amorphous semiconductor regions 17 can be collected with higher efficiency. According to the manufacturing method of the photoelectric conversion element 2 of the present embodiment, a photoelectric conversion element with improved efficiency of converting light energy into electric energy can be manufactured.
  • the photoelectric conversion element 2 of the present embodiment has the same configuration as the photoelectric conversion element 2 of the fourth embodiment.
  • the manufacturing method of the photoelectric conversion element 2 of the present embodiment basically includes the same steps as the manufacturing method of the photoelectric conversion element 2 of the fourth embodiment, but differs in the following points.
  • the first amorphous semiconductor layer 15 is doped with the first and second impurities by the ion implantation method.
  • the first and second impurities are doped in the first amorphous semiconductor layer 15 by the same method as the manufacturing method of the second embodiment. Is done.
  • a first dopant-containing film 26 containing a first impurity having a first conductivity type and a second impurity having a second conductivity type are formed on the first amorphous semiconductor layer 15.
  • a second dopant-containing film 27 is formed. Then, the first dopant-containing film 26 and the second dopant-containing film 27 are heat-treated, so that the first impurity contained in the first dopant-containing film 26 and the second dopant-containing film 27 are contained. Impurities are transferred to the first amorphous semiconductor layer 15.
  • the second amorphous semiconductor layer 12, the third amorphous semiconductor layer 13, and the dielectric layer 14 are formed on the first surface 11 a of the semiconductor substrate 11.
  • the first amorphous semiconductor layer 15 is formed on the second surface 11 b of the semiconductor substrate 11.
  • a first dopant-containing film 26 containing a first impurity having the first conductivity type is formed on the first portion of the first amorphous semiconductor layer 15.
  • a second dopant-containing film 27 containing a second impurity having the second conductivity type is formed on the second portion of the amorphous semiconductor layer 15.
  • the first dopant-containing film 26 may be a first doping paste containing a first impurity having the first conductivity type.
  • the second dopant-containing film 27 may be a second doping paste containing a second impurity having the second conductivity type.
  • the first dopant-containing film 26 and the second dopant-containing film 27 are heat-treated, and the first impurity contained in the first dopant-containing film 26 is converted into the first amorphous semiconductor layer.
  • the second impurity contained in the second dopant-containing film 27 is transferred to the first portion of the first amorphous semiconductor layer 15 over the entire thickness of the first amorphous semiconductor layer 15.
  • the photoelectric conversion element of the present embodiment except that the first impurity and the second impurity are transferred to the first amorphous semiconductor layer 15 over the entire thickness of the first amorphous semiconductor layer 15.
  • the manufacturing method 2 is the same as the manufacturing method of the photoelectric conversion element 1 of the second embodiment.
  • the photoelectric conversion element 2 of this Embodiment and its manufacturing method have the effect of the photoelectric conversion element 2 of Embodiment 4, and its manufacturing method, and the effect of the photoelectric conversion element 1 of Embodiment 2, and its manufacturing method. .
  • the photoelectric conversion element 2 of the present embodiment has the same configuration as the photoelectric conversion element 2 of the fourth embodiment.
  • the manufacturing method of the photoelectric conversion element 2 of the present embodiment basically includes the same steps as the manufacturing method of the photoelectric conversion element 2 of the fourth embodiment, but differs in the following points.
  • the first amorphous semiconductor layer 15 is doped with the first and second impurities by the ion implantation method.
  • the first dopant-containing film 26 is included in the first dopant-containing film 26 by laser doping.
  • the first impurity and the second impurity contained in the second dopant-containing film 27 are transferred to the first amorphous semiconductor layer 15.
  • the second amorphous semiconductor layer 12, the third amorphous semiconductor layer 13, and the dielectric layer 14 are formed on the first surface 11 a of the semiconductor substrate 11.
  • the first amorphous semiconductor layer 15 is formed on the second surface 11 b of the semiconductor substrate 11.
  • a first dopant-containing film 26 containing a first impurity having the first conductivity type is formed on the first amorphous semiconductor layer 15. Subsequently, a part of the first dopant-containing film 26 is irradiated with the first laser light 28, and the first impurity contained in the first dopant-containing film 26 is changed into the first amorphous semiconductor layer 15. The first portion is moved over the entire thickness of the first amorphous semiconductor layer 15. Then, the remaining first dopant-containing film 26 is removed using a mixed solution of sulfuric acid and hydrogen peroxide solution, a mixed solution of hydrochloric acid and hydrogen peroxide solution, or hydrofluoric acid.
  • a second dopant-containing film 27 containing a second impurity having the second conductivity type is formed on the first amorphous semiconductor layer 15. Subsequently, a part of the second dopant-containing film 27 is irradiated with the second laser light 29, and the second impurity contained in the second dopant-containing film 27 is removed from the first amorphous semiconductor layer 15. The second portion is moved over the entire thickness of the first amorphous semiconductor layer 15.
  • the photoelectric conversion element of the present embodiment except that the first impurity and the second impurity are transferred to the first amorphous semiconductor layer 15 over the entire thickness of the first amorphous semiconductor layer 15.
  • the manufacturing method 2 is the same as the manufacturing method of the photoelectric conversion element 1 of the third embodiment.
  • the photoelectric conversion element 2 and its manufacturing method of the present embodiment have the effects of the photoelectric conversion element 2 of the fourth embodiment and its manufacturing method, and the effects of the photoelectric conversion element 1 of the third embodiment and its manufacturing method. .
  • Embodiment 7 The photoelectric conversion element 3 of Embodiment 7 is demonstrated with reference to FIG.20 and FIG.21.
  • the photoelectric conversion element 3 and the manufacturing method thereof according to the present embodiment are the same as the photoelectric conversion element 1 and the manufacturing method thereof according to Embodiment 1, but are different in the following points.
  • the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 are arranged in the first direction (for example, the x direction) in which the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 17 are alternately arranged.
  • the amorphous semiconductor region 16 and the second amorphous semiconductor region 17 may be in contact with each other.
  • the first direction for example, the x direction
  • the photoelectric conversion element 3 and the manufacturing method thereof according to the present embodiment have the same effects as the photoelectric conversion element 1 and the manufacturing method thereof according to the first to third embodiments, but are different in the following points.
  • the photoelectric conversion element 3 of the present embodiment in the direction in which the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 17 are alternately arranged (first direction, for example, x direction), The first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 may be in contact with each other. According to the photoelectric conversion element 3 of the present embodiment, at least one area of the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 can be increased. Carriers generated in the semiconductor substrate 11 by light incident from the first surface 11a side of the semiconductor substrate 11 can be collected with high efficiency. According to the photoelectric conversion element 3 of the present embodiment, the efficiency of converting light energy into electric energy can be improved.
  • the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 are alternately arranged (first direction, for example, the x direction). ), The first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 may be in contact with each other.
  • the area of at least one of the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 can be increased. Carriers generated in the semiconductor substrate 11 by light incident from the first surface 11a side of the semiconductor substrate 11 can be collected with high efficiency.
  • a photoelectric conversion element with improved efficiency of converting light energy into electric energy can be manufactured.
  • the photoelectric conversion element 4 according to the eighth embodiment will be described with reference to FIGS.
  • the photoelectric conversion element 4 and the manufacturing method thereof according to the present embodiment are the same as the photoelectric conversion element 2 and the manufacturing method thereof according to Embodiment 4, but are different in the following points.
  • the first direction for example, the x direction
  • the first amorphous semiconductor region 16 and the second amorphous semiconductor regions 17 may be in contact with each other.
  • the first direction for example, the x direction
  • the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 17 are alternately arranged. 2 except that the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 are in contact with each other, similar to the photoelectric conversion element 2 and the manufacturing method thereof according to the fourth to sixth embodiments. It is.
  • the photoelectric conversion element 4 and the manufacturing method thereof according to the present embodiment are the effects of the photoelectric conversion element 2 and the manufacturing method thereof according to the fourth to sixth embodiments, and the photoelectric conversion element 3 and the manufacturing method thereof according to the seventh embodiment. It has the effect of.
  • the photoelectric conversion element 5 which concerns on Embodiment 9 is demonstrated.
  • the photoelectric conversion element 5 of the present embodiment includes a semiconductor substrate 11, a tunnel dielectric layer 20, a first amorphous semiconductor layer 15, a first amorphous semiconductor region 16, and a second amorphous semiconductor. Mainly comprising a crystalline semiconductor region 17, a first electrode 18, and a second electrode 19.
  • the semiconductor substrate 11 may be an n-type or p-type semiconductor substrate.
  • an n-type single crystal silicon substrate is used as the semiconductor substrate 11.
  • the semiconductor substrate 11 includes a first surface 11a, a second surface 11b opposite to the first surface 11a, a first side surface 11c connecting the first surface 11a and the second surface 11b, The first surface 11a and the second surface 11b are connected to each other, and the second side surface 11d is located opposite to the first side surface 11c.
  • the first surface 11a of the semiconductor substrate 11 may be a light incident surface.
  • the first surface 11a and the second surface 11b of the semiconductor substrate 11 have a first direction (for example, x direction) and a second direction (for example, y direction) that intersects the first direction (for example, x direction).
  • the thickness direction of the semiconductor substrate 11 is a third direction (for example, z direction) that intersects the first direction (for example, x direction) and the second direction (for example, y direction).
  • the tunnel dielectric layer 20 is provided on at least the second surface 11 b of the semiconductor substrate 11. Specifically, the tunnel dielectric layer 20 may contact the second surface 11 b of the semiconductor substrate 11.
  • the tunnel dielectric layer 20 is a dielectric layer having passivation characteristics such as a silicon oxide layer.
  • the tunnel dielectric layer 20 suppresses recombination of carriers generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 on the second surface 11 b of the semiconductor substrate 11. Can do.
  • the tunnel dielectric layer 20 can improve the passivation characteristics of the photoelectric conversion element 5.
  • the tunnel dielectric layer 20 uses carriers generated in the semiconductor substrate 11 by light incident from the first surface 11a side of the semiconductor substrate 11 as the first amorphous semiconductor region 16 and the second amorphous semiconductor. Tunnel to region 17. Carriers generated in the semiconductor substrate 11 by light incident from the first surface 11a side of the semiconductor substrate 11 can be efficiently collected.
  • the tunnel dielectric layer 20 may have a thickness of 0.2 nm to 5.0 nm, preferably 0.5 nm to 3.0 nm.
  • the thickness of the tunnel dielectric layer 20 may be the length of the tunnel dielectric layer 20 in the third direction (eg, the z direction).
  • the tunnel dielectric layer 20 having a thickness of 0.2 nm or more, preferably 0.5 nm or more can further improve the passivation characteristics of the photoelectric conversion element 5.
  • the tunnel dielectric layer 20 having a thickness of 5.0 nm or less, preferably 3.0 nm or less, generates carriers generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11. It is possible to tunnel more efficiently into the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17. Carriers generated in the semiconductor substrate 11 by light incident from the first surface 11a side of the semiconductor substrate 11 can be collected more efficiently.
  • the tunnel dielectric layer 20 may be further provided on the first surface 11 a of the semiconductor substrate 11. Carriers generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 can be suppressed from recombining on the first surface 11 a of the semiconductor substrate 11.
  • the tunnel dielectric layer 20 may be further provided on the first side surface 11 c and the second side surface 11 d of the semiconductor substrate 11. Carriers generated in the semiconductor substrate 11 by light incident from the first surface 11a side of the semiconductor substrate 11 can be suppressed from recombining on the first side surface 11c and the second side surface 11d of the semiconductor substrate 11. .
  • the photoelectric conversion element 5 of the present embodiment includes a first amorphous semiconductor layer 15 having i-type on the tunnel dielectric layer 20.
  • a layer 15 may be provided. Specifically, the first amorphous semiconductor layer 15 may be in contact with the tunnel dielectric layer 20.
  • the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 17 are alternately arranged.
  • the first amorphous semiconductor layer 15 may exist between the amorphous semiconductor region 17 and the amorphous semiconductor region 17.
  • the first amorphous semiconductor region 16 having the first conductivity type and the second amorphous semiconductor region 17 having the second conductivity type are the first amorphous semiconductor region 16 and the second non-conductive region.
  • the crystalline semiconductor regions 17 may be separated by the first amorphous semiconductor layer 15 having i-type.
  • an i-type amorphous silicon film is used as the first amorphous semiconductor layer 15.
  • the first amorphous semiconductor layer 15 having i-type carriers generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 are formed on the second surface 11 b of the semiconductor substrate 11. Recombination can be suppressed.
  • the i-type first amorphous semiconductor layer 15 can improve the passivation characteristics of the photoelectric conversion element 5.
  • the photoelectric conversion element 5 according to the present embodiment is provided in the first portion of the first amorphous semiconductor layer 15 and includes the first amorphous semiconductor region 16 having the first conductivity type.
  • the photoelectric conversion element 5 of the present embodiment is provided on the tunnel dielectric layer 20 and includes a first amorphous semiconductor region 16 having a first conductivity type.
  • the first amorphous semiconductor region 16 includes a first impurity having the first conductivity type.
  • the first amorphous semiconductor region 16 may be an n-type or p-type amorphous semiconductor region.
  • the first impurity may be an n-type impurity such as phosphorus or a p-type impurity such as boron.
  • the first impurity is an n-type impurity such as phosphorus
  • the first amorphous semiconductor region 16 is an n-type amorphous silicon region.
  • the first amorphous semiconductor region 16 may be provided in a stripe shape extending in the second direction (for example, the y direction).
  • the photoelectric conversion element 5 of the present embodiment is provided in a second portion of the first amorphous semiconductor layer 15 different from the first portion, and has a second amorphous type having a second conductivity type.
  • a semiconductor region 17 is provided.
  • the photoelectric conversion element 5 of the present embodiment is provided on the tunnel dielectric layer 20 and includes a second amorphous semiconductor region 17 having a second conductivity type.
  • the first amorphous semiconductor layer 15, the first amorphous semiconductor region 16, and the second amorphous semiconductor region 17 constitute one layer that extends continuously.
  • the surfaces of the first amorphous semiconductor layer 15, the first amorphous semiconductor region 16, and the second amorphous semiconductor region 17 on the side opposite to the semiconductor substrate 11 are continuous one You may comprise the surface.
  • the first direction for example, the x direction
  • the second amorphous semiconductor regions 17 The amorphous semiconductor region 16 is not overlapped.
  • the second amorphous semiconductor region 17 includes a second impurity having the second conductivity type.
  • the second amorphous semiconductor region 17 may be a p-type or n-type amorphous semiconductor region.
  • the second impurity may be a p-type impurity such as boron or an n-type impurity such as phosphorus.
  • the second impurity is a p-type impurity such as boron
  • the second amorphous semiconductor region 17 is a p-type amorphous silicon region.
  • the second amorphous semiconductor region 17 may be provided in a stripe shape extending in the second direction (for example, the y direction).
  • the photoelectric conversion element 5 of the present embodiment includes a first electrode 18 that is electrically connected to the first amorphous semiconductor region 16.
  • the first electrode 18 may be provided on the second surface 11 b of the semiconductor substrate 11. Specifically, the first electrode 18 may be provided on the first amorphous semiconductor region 16.
  • the first electrode 18 may be provided in a stripe shape extending in the second direction (for example, the y direction).
  • a metal electrode may be exemplified as the first electrode 18.
  • silver (Ag) is used as the first electrode 18.
  • the first electrode 18 may be an n-type electrode.
  • the photoelectric conversion element 5 of this embodiment includes a second electrode 19 that is electrically connected to the second amorphous semiconductor region 17.
  • the second electrode 19 may be provided on the second surface 11 b of the semiconductor substrate 11. Specifically, the second electrode 19 may be provided on the second amorphous semiconductor region 17.
  • the second electrode 19 may be provided in a stripe shape extending in the second direction (for example, the y direction).
  • a metal electrode may be exemplified as the second electrode 19.
  • silver (Ag) is used as the second electrode 19.
  • the second electrode 19 may be a p-type electrode.
  • the semiconductor substrate 11 and the first amorphous semiconductor region 16 are heterojunctioned via the first amorphous semiconductor layer 15 and the tunnel dielectric layer 20, and the semiconductor The substrate 11 and the second amorphous semiconductor region 17 are heterojunctioned via the first amorphous semiconductor layer 15 and the tunnel dielectric layer 20. Therefore, the photoelectric conversion element 5 having improved passivation characteristics and a high open circuit voltage V OC can be obtained. According to the photoelectric conversion element 5 of the present embodiment, the efficiency of converting light energy into electric energy can be improved.
  • the first surface 11a of the semiconductor substrate 11 may include an uneven structure. Light enters the photoelectric conversion element 5 from the first surface 11a side.
  • the concavo-convex structure on the first surface 11a of the semiconductor substrate 11 that is the light incident surface reflection of incident light on the first surface 11a of the semiconductor substrate 11 can be suppressed, and more Light can enter the photoelectric conversion element 5.
  • the efficiency of converting light energy into electrical energy in the photoelectric conversion element 5 can be improved.
  • the photoelectric conversion element 5 of the present embodiment may include the second amorphous semiconductor layer 12 having i-type on the first surface 11a of the semiconductor substrate 11.
  • the passivation characteristics on the first surface 11 a of the semiconductor substrate 11 can be improved.
  • the photoelectric conversion element 5 of the present embodiment may include a third amorphous semiconductor layer 13 having the same conductivity type as the semiconductor substrate 11 on the first surface 11 a of the semiconductor substrate 11.
  • a third amorphous semiconductor layer 13 having the same conductivity type as that of the semiconductor substrate 11 may be provided on the second amorphous semiconductor layer 12 having i type.
  • the third amorphous semiconductor layer 13 can be an n-type or p-type amorphous semiconductor layer.
  • an n-type amorphous silicon film is used as the third amorphous semiconductor layer 13.
  • the third amorphous semiconductor layer 13 having the same conductivity type as the semiconductor substrate 11 may function as a surface electric field layer.
  • carriers are generated in the semiconductor substrate 11.
  • the third amorphous semiconductor layer 13 having the same conductivity type as that of the semiconductor substrate 11 generates an electric field in the vicinity of the first surface 11a of the semiconductor substrate 11, and an energy band is generated in the vicinity of the first surface 11a of the semiconductor substrate 11. Curve. Carriers approaching the first surface 11 a of the semiconductor substrate 11 are pushed back into the semiconductor substrate 11 by the electric field and the curvature of the energy band. In the first surface 11a of the semiconductor substrate 11, recombination of carriers can be suppressed.
  • a dielectric layer 14 may be provided on the first surface 11 a of the semiconductor substrate 11.
  • the dielectric layer 14 may be composed of a single layer or a plurality of layers. Examples of the material of the dielectric layer 14 include silicon nitride (SiN x ) and silicon oxide (SiO x ).
  • the dielectric layer 14 may function as an antireflection film.
  • the dielectric layer 14 may function as a passivation film.
  • a semiconductor substrate 11 having a first surface 11a and a second surface 11b opposite to the first surface 11a is prepared.
  • an uneven structure may be formed on first surface 11 a of semiconductor substrate 11.
  • the first surface 11a of the semiconductor substrate 11 which is an n-type single crystal silicon substrate is anisotropically etched using potassium hydroxide (KOH), whereby the first surface 11a of the semiconductor substrate 11 is uneven.
  • KOH potassium hydroxide
  • tunnel dielectric layer 20 is formed on second surface 11b of semiconductor substrate 11.
  • the tunnel dielectric layer 20 may be further formed on the first surface 11 a of the semiconductor substrate 11.
  • the tunnel dielectric layer 20 may be further formed on the first side surface 11 c and the second side surface 11 d of the semiconductor substrate 11.
  • tunnel dielectric layer 20 is formed on the entire surface of semiconductor substrate 11.
  • the tunnel dielectric layer 20 may be formed on at least the second surface 11b of the semiconductor substrate 11 by immersing at least the second surface 11b of the semiconductor substrate 11 in ozone water or hydrogen peroxide solution.
  • the tunnel dielectric layer 20 may be formed on at least the second surface 11 b of the semiconductor substrate 11 by thermally oxidizing at least the second surface 11 b of the semiconductor substrate 11.
  • the tunnel dielectric layer 20 may be formed on at least the second surface 11 b of the semiconductor substrate 11 by depositing the tunnel dielectric layer 20 on at least the second surface 11 b of the semiconductor substrate 11.
  • i-type second amorphous semiconductor layer 12 may be formed on first surface 11 a of semiconductor substrate 11.
  • a third amorphous semiconductor layer 13 having the same conductivity type as that of the semiconductor substrate 11 may be formed on the first surface 11 a of the semiconductor substrate 11.
  • a third amorphous semiconductor layer 13 having the same conductivity type as that of the semiconductor substrate 11 may be formed on the i-type second amorphous semiconductor layer 12.
  • a method for forming the second amorphous semiconductor layer 12 and the third amorphous semiconductor layer 13 is not particularly limited, and may be, for example, a plasma chemical vapor deposition (CVD) method.
  • CVD plasma chemical vapor deposition
  • dielectric layer 14 may be formed on first surface 11a of semiconductor substrate 11. Specifically, the dielectric layer 14 may be formed on the third amorphous semiconductor layer 13 having the same conductivity type as the semiconductor substrate 11.
  • the formation method of the dielectric layer 14 is not particularly limited, but may be, for example, a plasma chemical vapor deposition (CVD) method.
  • i-type first amorphous semiconductor layer 15 is formed on tunnel dielectric layer 20.
  • a method for forming the first amorphous semiconductor layer 15 is not particularly limited, and may be, for example, a plasma chemical vapor deposition (CVD) method.
  • first amorphous semiconductor region 16 having the first conductivity type is formed in first amorphous semiconductor layer 15.
  • Forming the first amorphous semiconductor region 16 in the first amorphous semiconductor layer 15 means doping the first portion of the first amorphous semiconductor layer 15 with the first impurity. Including.
  • doping the first portion of the first amorphous semiconductor layer 15 with the first impurity having the first conductivity type means that the first portion of the first amorphous semiconductor layer 15 It may include implanting a first impurity into the portion. That is, the first impurity may be doped in the first portion of the first amorphous semiconductor layer 15 by ion implantation. Specifically, the first portion of the first amorphous semiconductor layer 15 is irradiated with the first ion beam 21 of the first impurity to the first portion of the first amorphous semiconductor layer 15. The portion may be doped with a first impurity. Thus, the first amorphous semiconductor region 16 having the first conductivity type may be formed in the first portion of the first amorphous semiconductor layer 15.
  • a first mask 22 having an opening corresponding to the first portion of the first amorphous semiconductor layer 15 and covering the other portion of the first amorphous semiconductor layer 15 may be used. .
  • a second amorphous semiconductor region 17 having a second conductivity type different from the first conductivity type is formed in first amorphous semiconductor layer 15.
  • the formation of the second amorphous semiconductor region 17 in the first amorphous semiconductor layer 15 causes the second portion of the first amorphous semiconductor layer 15 different from the first portion to Doping with a second impurity having a conductivity type.
  • doping the second portion of the first amorphous semiconductor layer 15 with the second impurity means that the second portion of the first amorphous semiconductor layer 15 is doped with the second impurity.
  • Ion implantation may be included. That is, the second impurity may be doped in the second portion of the first amorphous semiconductor layer 15 by ion implantation.
  • the second portion of the first amorphous semiconductor layer 15 is irradiated with the second ion beam 23 of the second impurity to the second portion of the first amorphous semiconductor layer 15.
  • the portion may be doped with a second impurity.
  • the second amorphous semiconductor region 17 having the second conductivity type may be formed in the second portion of the first amorphous semiconductor layer 15.
  • a second mask 24 having an opening corresponding to the second portion of the first amorphous semiconductor layer 15 and covering the other portion of the first amorphous semiconductor layer 15 may be used.
  • the first amorphous semiconductor layer 15 may exist between the tunnel dielectric layer 20 and the first amorphous semiconductor region 16.
  • a first amorphous semiconductor layer 15 may exist between the tunnel dielectric layer 20 and the second amorphous semiconductor region 17.
  • the first direction for example, the x direction
  • the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 16 are alternately arranged
  • the first amorphous semiconductor layer 15 may exist between the amorphous semiconductor region 17 and the amorphous semiconductor region 17.
  • the first amorphous semiconductor region 16 having the first conductivity type and the second amorphous semiconductor region 17 having the second conductivity type are formed by the first amorphous semiconductor layer 15 having the i type. It may be separated.
  • the first impurity contained in the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 are In order to activate the contained second impurity, the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 may be annealed.
  • the first electrode 18 that is electrically connected to the first amorphous semiconductor region 16 is formed on the second surface 11 b of the semiconductor substrate 11. Specifically, the first electrode 18 is formed on the first amorphous semiconductor region 16.
  • a second electrode 19 that is electrically connected to the second amorphous semiconductor region 17 is formed on the second surface 11 b of the semiconductor substrate 11. Specifically, the second electrode 19 is formed on the second amorphous semiconductor region 17.
  • the photoelectric conversion element 5 of this Embodiment includes a semiconductor substrate 11 having a first surface 11a and a second surface 11b opposite to the first surface 11a, and a tunnel provided on the second surface 11b.
  • the semiconductor device includes a first amorphous semiconductor region 16 and a second amorphous semiconductor region 17 provided on the tunnel dielectric layer 20 and having a second conductivity type different from the first conductivity type.
  • the first amorphous semiconductor region 16 includes a first impurity having the first conductivity type.
  • the second amorphous semiconductor region 17 includes a second impurity having the second conductivity type.
  • the first amorphous semiconductor layer 15, the first amorphous semiconductor region 16, and the second amorphous semiconductor region 17 constitute one layer that extends continuously.
  • the photoelectric conversion element 5 of the present embodiment includes a tunnel dielectric layer 20 on the second surface 11b of the semiconductor substrate 11.
  • the tunnel dielectric layer 20 suppresses recombination of carriers generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 on the second surface 11 b of the semiconductor substrate 11. Can do.
  • a photoelectric conversion element having improved passivation characteristics can be provided.
  • the tunnel dielectric layer 20 uses carriers generated in the semiconductor substrate 11 by light incident from the first surface 11a side of the semiconductor substrate 11 as the first amorphous semiconductor region 16 and the second amorphous semiconductor. Tunnel to region 17. According to the photoelectric conversion element 5 of the present embodiment, carriers generated in the semiconductor substrate 11 by light incident from the first surface 11a side of the semiconductor substrate 11 can be efficiently collected.
  • the photoelectric conversion element 5 of the present embodiment can be manufactured without exposing the second surface 11b of the semiconductor substrate 11 after the tunnel dielectric layer 20 is formed on the second surface 11b of the semiconductor substrate 11. It has a structure. A structure that can be manufactured without contamination of the second surface 11b of the semiconductor substrate 11 or roughening of the second surface 11b of the semiconductor substrate 11 due to etching of the amorphous semiconductor layer is described in this embodiment.
  • the photoelectric conversion element 5 is provided. According to the photoelectric conversion element 5 of the present embodiment, a photoelectric conversion element having improved characteristics and reliability can be provided.
  • the photoelectric conversion element 5 includes a first dielectric layer 20 between the tunnel dielectric layer 20 and the first amorphous semiconductor region 16 and a second dielectric semiconductor region 17 between the tunnel dielectric layer 20 and the second amorphous semiconductor region 17.
  • One amorphous semiconductor layer 15 may exist.
  • the first amorphous semiconductor layer 15 having i-type carriers generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 are formed on the second surface 11 b of the semiconductor substrate 11. Recombination can be suppressed.
  • the passivation characteristics and the efficiency of converting light energy into electric energy can be improved.
  • the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 17 are arranged in the direction in which the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 17 are alternately arranged.
  • the first amorphous semiconductor layer 15 may exist between the second amorphous semiconductor region 17.
  • the first amorphous semiconductor region 16 having the first conductivity type and the second amorphous semiconductor region 17 having the second conductivity type are formed by the first amorphous semiconductor layer 15 having the i type. It may be separated. According to the photoelectric conversion element of the present embodiment, the efficiency of converting light energy into electric energy can be improved.
  • the tunnel dielectric layer 20 may have a thickness of 0.2 nm to 5.0 nm.
  • the tunnel dielectric layer 20 having a thickness of 0.2 nm or more can further improve the passivation characteristics of the photoelectric conversion element 5.
  • the tunnel dielectric layer 20 having a thickness of 5.0 nm or less allows carriers generated in the semiconductor substrate 11 to be incident on the first amorphous semiconductor region by light incident from the first surface 11a side of the semiconductor substrate 11. 16 and the second amorphous semiconductor region 17 can be more efficiently tunneled.
  • carriers generated in the semiconductor substrate 11 by light incident from the first surface 11a side of the semiconductor substrate 11 can be collected more efficiently.
  • the photoelectric conversion element 5 is provided on the second surface 11b of the semiconductor substrate 11, and the first electrode 18 electrically connected to the first amorphous semiconductor region 16 and the semiconductor A second electrode 19 provided on the second surface 11 b of the substrate 11 and electrically connected to the second amorphous semiconductor region 17 may be further provided.
  • the first electrode 18 and the second electrode 19 are not provided on the first surface 11a side of the semiconductor substrate 11 that is a light incident surface. Light incident on the photoelectric conversion element 5 is not blocked by the first electrode 18 and the second electrode 19. According to the photoelectric conversion element 5 of the present embodiment, a high short-circuit current J SC can be obtained, and the efficiency of converting light energy into electrical energy can be improved.
  • the photoelectric conversion element 5 of the present embodiment may further include a dielectric layer 14 on the first surface 11a of the semiconductor substrate 11.
  • the dielectric layer 14 functions as an antireflection film
  • the dielectric layer 14 can cause more light to enter the photoelectric conversion element 5.
  • the efficiency of converting light energy into electric energy can be improved.
  • the dielectric layer 14 functions as a passivation film
  • the carrier generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 is the first dielectric layer 14 of the semiconductor substrate 11. It is possible to suppress recombination on the surface 11a.
  • the efficiency of converting light energy into electric energy can be improved.
  • the photoelectric conversion element 5 of the present embodiment may further include an i-type second amorphous semiconductor layer 12 on the first surface 11 a of the semiconductor substrate 11.
  • the second amorphous semiconductor layer 12 having i-type carriers generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 are formed on the first surface 11 a of the semiconductor substrate 11. Recombination can be suppressed.
  • the passivation characteristics and the efficiency of converting light energy into electric energy can be improved.
  • the photoelectric conversion element 5 of the present embodiment may further include a third amorphous semiconductor layer 13 having the same conductivity type as the semiconductor substrate 11 on the first surface 11 a of the semiconductor substrate 11.
  • the third amorphous semiconductor layer 13 having the same conductivity type as that of the semiconductor substrate 11 has the first surface 11 a of the semiconductor substrate 11 among the carriers generated in the semiconductor substrate 11 when light enters the photoelectric conversion element 5.
  • the carrier approaching can be pushed back into the semiconductor substrate 11.
  • the third amorphous semiconductor layer 13 can suppress recombination of this carrier on the first surface 11 a of the semiconductor substrate 11. According to the photoelectric conversion element 5 of the present embodiment, the passivation characteristics and the efficiency of converting light energy into electric energy can be improved.
  • the first surface 11a of the semiconductor substrate 11 may include an uneven structure.
  • the efficiency of converting light energy into electric energy can be improved.
  • the tunnel dielectric is formed on the second surface 11b of the semiconductor substrate 11 having the first surface 11a and the second surface 11b opposite to the first surface 11a.
  • Forming a first amorphous semiconductor region 16 having a conductivity type, and a second amorphous having a second conductivity type different from the first conductivity type in the first amorphous semiconductor layer 15 Forming a semiconductor region 17.
  • the formation of the first amorphous semiconductor region 16 in the first amorphous semiconductor layer 15 means that the first portion of the first amorphous semiconductor layer 15 has the first conductivity type. Doping with one impurity.
  • the formation of the second amorphous semiconductor region 17 in the first amorphous semiconductor layer 15 causes the second portion of the first amorphous semiconductor layer 15 different from the first portion to Doping with a second impurity having a conductivity type.
  • the method for manufacturing the photoelectric conversion element 5 according to the present embodiment includes forming the tunnel dielectric layer 20 on the second surface 11b of the semiconductor substrate 11.
  • the tunnel dielectric layer 20 suppresses recombination of carriers generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 on the second surface 11 b of the semiconductor substrate 11. Can do.
  • a photoelectric conversion element having improved passivation characteristics can be manufactured.
  • the tunnel dielectric layer 20 uses carriers generated in the semiconductor substrate 11 by light incident from the first surface 11a side of the semiconductor substrate 11 as the first amorphous semiconductor region 16 and the second amorphous semiconductor. Tunnel to region 17.
  • the photoelectric conversion element 5 of the present embodiment before the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 are formed in the first amorphous semiconductor layer 15.
  • the second surface 11 b of the semiconductor substrate 11 is covered with the tunnel dielectric layer 20.
  • the photoelectric conversion element 5 can be manufactured without exposing the second surface 11b of the semiconductor substrate 11.
  • the photoelectric conversion element 5 can be manufactured without the contaminants adhering to the second surface 11b of the semiconductor substrate 11 or the second surface 11b of the semiconductor substrate 11 being roughened by etching the amorphous semiconductor layer. According to the method for manufacturing the photoelectric conversion element 5 of the present embodiment, a photoelectric conversion element having improved characteristics and reliability can be manufactured.
  • the tunnel dielectric layer 20 and the first amorphous semiconductor region 16 and the tunnel dielectric layer 20 and the second amorphous semiconductor region 17 There may be a first amorphous semiconductor layer 15 in between.
  • the first amorphous semiconductor layer 15 having i-type carriers generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 are formed on the second surface 11 b of the semiconductor substrate 11. Recombination can be suppressed.
  • a photoelectric conversion element with improved passivation characteristics and efficiency of converting light energy into electric energy can be manufactured.
  • the direction in which the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 17 are alternately arranged (first direction, for example, x direction) )
  • the first amorphous semiconductor layer 15 may exist between the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17.
  • the first amorphous semiconductor region 16 having the first conductivity type and the second amorphous semiconductor region 17 having the second conductivity type are formed by the first amorphous semiconductor layer 15 having the i type. It may be separated.
  • a photoelectric conversion element with improved efficiency for converting light energy into electric energy can be manufactured.
  • doping the first portion of the first amorphous semiconductor layer 15 with the first impurity means that the first amorphous semiconductor layer 15 has the first thickness. Implanting a first impurity into the portion may be included. Doping the second impurity in the second portion of the first amorphous semiconductor layer 15 means that the second impurity is ion-implanted into the second portion of the first amorphous semiconductor layer 15. May be included. According to the method for manufacturing the photoelectric conversion element 5 of the present embodiment, a photoelectric conversion element having improved characteristics and reliability can be manufactured by a simple process.
  • forming the tunnel dielectric layer 20 on the second surface 11b of the semiconductor substrate 11 means that the second surface 11b of the semiconductor substrate 11 is made of ozone water or excess water. It may include soaking in hydrogen oxide water.
  • the tunnel dielectric layer 20 is quickly formed by a simple process of immersing the second surface 11b of the semiconductor substrate 11 in ozone water or hydrogen peroxide water. Can be done.
  • the tunnel dielectric layer 20 can be formed by a simple process of thermally oxidizing the second surface 11b of the semiconductor substrate 11.
  • forming the tunnel dielectric layer 20 on the second surface 11b of the semiconductor substrate 11 means that the tunnel dielectric is formed on the second surface 11b of the semiconductor substrate 11.
  • Depositing layer 20 may also be included.
  • the tunnel dielectric layer 20 can be formed by a simple process of depositing the tunnel dielectric layer 20 on the second surface 11 b of the semiconductor substrate 11. .
  • the tunnel dielectric layer 20 may have a thickness of 0.2 nm or more and 5.0 nm or less.
  • the tunnel dielectric layer 20 having a thickness of 0.2 nm or more can further improve the passivation characteristics of the photoelectric conversion element 5.
  • the tunnel dielectric layer 20 having a thickness of 5.0 nm or less allows carriers generated in the semiconductor substrate 11 to be incident on the first amorphous semiconductor region by light incident from the first surface 11a side of the semiconductor substrate 11. 16 and the second amorphous semiconductor region 17 can be more efficiently tunneled.
  • carriers generated in the semiconductor substrate 11 by light incident from the first surface 11a side of the semiconductor substrate 11 can be collected more efficiently.
  • a photoelectric conversion element can be manufactured.
  • the first electrode 18 electrically connected to the first amorphous semiconductor region 16 is formed on the second surface 11 b of the semiconductor substrate 11. And forming a second electrode 19 electrically connected to the second amorphous semiconductor region 17 on the second surface 11 b of the semiconductor substrate 11.
  • the first electrode 18 and the second electrode 19 are photoelectric elements that are not provided on the first surface 11a side of the semiconductor substrate 11 that is the light incident surface.
  • the conversion element 5 can be manufactured. Light incident on the photoelectric conversion element 5 is not blocked by the first electrode 18 and the second electrode 19. According to the method for manufacturing the photoelectric conversion element 5 of the present embodiment, it is possible to manufacture a photoelectric conversion element having a high short-circuit current J SC and an improved efficiency for converting light energy into electric energy.
  • the method for manufacturing the photoelectric conversion element 5 of the present embodiment may further include forming the dielectric layer 14 on the first surface 11 a of the semiconductor substrate 11.
  • the dielectric layer 14 functions as an antireflection film, the dielectric layer 14 can cause more light to enter the photoelectric conversion element 5.
  • a photoelectric conversion element with improved efficiency for converting light energy into electric energy can be manufactured.
  • the dielectric layer 14 functions as a passivation film, the carrier generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 is the first dielectric layer 14 of the semiconductor substrate 11. It is possible to suppress recombination on the surface 11a.
  • a photoelectric conversion element with improved efficiency for converting light energy into electric energy can be manufactured.
  • the method for manufacturing the photoelectric conversion element 5 of the present embodiment may further include forming the second amorphous semiconductor layer 12 having i-type on the first surface 11 a of the semiconductor substrate 11.
  • the second amorphous semiconductor layer 12 having i-type carriers generated in the semiconductor substrate 11 by light incident from the first surface 11 a side of the semiconductor substrate 11 are formed on the first surface 11 a of the semiconductor substrate 11. Recombination can be suppressed.
  • a photoelectric conversion element with improved passivation characteristics and efficiency of converting light energy into electric energy can be manufactured.
  • the method for manufacturing the photoelectric conversion element 5 according to the present embodiment further includes forming the third amorphous semiconductor layer 13 having the same conductivity type as the semiconductor substrate 11 on the first surface 11 a of the semiconductor substrate 11. You may prepare.
  • the third amorphous semiconductor layer 13 having the same conductivity type as that of the semiconductor substrate 11 has the first surface 11 a of the semiconductor substrate 11 among the carriers generated in the semiconductor substrate 11 when light enters the photoelectric conversion element 5.
  • the carrier approaching can be pushed back into the semiconductor substrate 11.
  • the third amorphous semiconductor layer 13 can suppress recombination of this carrier on the first surface 11 a of the semiconductor substrate 11. According to the method for manufacturing the photoelectric conversion element 5 of the present embodiment, a photoelectric conversion element with improved passivation characteristics and efficiency of converting light energy into electric energy can be manufactured.
  • the method for manufacturing the photoelectric conversion element 5 according to the present embodiment may further include forming a concavo-convex structure on the first surface 11 a of the semiconductor substrate 11. By forming a concavo-convex structure on the first surface 11 a of the semiconductor substrate 11 that is a light incident surface, more light can be incident into the photoelectric conversion element 5. According to the method for manufacturing the photoelectric conversion element 5 of the present embodiment, a photoelectric conversion element with improved efficiency for converting light energy into electric energy can be manufactured.
  • the photoelectric conversion element 5 of the present embodiment has a configuration similar to that of the photoelectric conversion element 5 of the ninth embodiment.
  • the manufacturing method of the photoelectric conversion element 5 of the present embodiment basically includes the same steps as the manufacturing method of the photoelectric conversion element 5 of the ninth embodiment, but differs in the following points.
  • the first amorphous semiconductor layer 15 is doped with the first and second impurities by the ion implantation method.
  • doping the first impurity in the first portion of the first amorphous semiconductor layer 15 is the first amorphous semiconductor. Forming a first dopant-containing film including a first impurity on the layer, and removing the first impurity contained in the first dopant-containing film from the first amorphous semiconductor layer; Transition to the portion of the above.
  • doping the second impurity in the second portion of the first amorphous semiconductor layer 15 causes the first amorphous semiconductor layer 15 to be doped.
  • Forming the second dopant-containing film 27 containing the second impurity, and transferring the second impurity contained in the second dopant-containing film 27 to the second portion of the first amorphous semiconductor layer 15 It may further include.
  • the formation of the first dopant-containing film 26 containing the first impurity on the first amorphous semiconductor 15 layer means that the first part of the first amorphous semiconductor layer 15 A first doping paste containing a first impurity may be applied thereon. Transferring the first impurity contained in the first dopant-containing film 26 to the first portion of the first amorphous semiconductor layer 15 may include heat-treating the first doping paste.
  • the formation of the second dopant-containing film 27 containing the second impurity on the first amorphous semiconductor layer 15 means that the second impurity is formed on the second portion of the first amorphous semiconductor layer 15.
  • a second doping paste containing may be applied. Transferring the second impurity contained in the second dopant-containing film 27 to the second portion of the first amorphous semiconductor layer 15 may include heat-treating the second doping paste.
  • the second amorphous semiconductor layer 12, the third amorphous semiconductor layer 13, and the first surface 11 a of the semiconductor substrate 11 are formed.
  • a dielectric layer 14 is formed, and a tunnel dielectric layer 20 and a first amorphous semiconductor layer 15 are formed on the second surface 11 b of the semiconductor substrate 11.
  • a first dopant-containing film 26 containing a first impurity having the first conductivity type is formed on the first portion of the first amorphous semiconductor layer 15.
  • a second dopant-containing film 27 containing a second impurity having the second conductivity type is formed on the second portion of the amorphous semiconductor layer 15.
  • the first dopant-containing film 26 may be a first doping paste.
  • the second dopant-containing film 27 may be a second doping paste.
  • Examples of the first and second doping pastes include a doping paste containing an n-type impurity such as phosphorus and a doping paste containing a p-type impurity such as boron.
  • the doping paste containing an n-type impurity may include a phosphorus compound, a silicon oxide precursor, a solvent, and a thickener.
  • the doping paste containing an impurity having p-type may include a boron compound, a silicon oxide precursor, a solvent, and a thickener.
  • a first doping paste containing a first impurity having an n-type such as phosphorus is used as the first dopant-containing film 26, and a p-type material such as boron is used as the second dopant-containing film 27.
  • a second doping paste containing a second impurity having a mold may be used.
  • the first doping paste may be applied on the first portion of the first amorphous semiconductor layer 15 by inkjet, screen printing, or the like.
  • the second doping paste may be applied on the second portion of the first amorphous semiconductor layer 15 by inkjet, screen printing, or the like.
  • the first dopant-containing film 26 and the second dopant-containing film 27 are heat-treated, and the first impurity contained in the first dopant-containing film 26 is changed to the first amorphous semiconductor layer. 15, the second impurity contained in the second dopant-containing film 27 is transferred to the second portion of the first amorphous semiconductor layer 15.
  • the first dopant-containing film 26 that is the first doping paste and the second dopant-containing film 27 that is the second doping paste are heat-treated at a temperature of, for example, 700 ° C.
  • the first impurity contained in the first dopant-containing film 26, which is a first doping paste of the first amorphous semiconductor layer 15 is doped with the first impurity, and the second dopant is contained as a second doping paste.
  • the second impurity contained in the film 27 is doped into the second portion of the first amorphous semiconductor layer 15.
  • the first amorphous semiconductor region 16 having the first conductivity type is formed in the first portion of the first amorphous semiconductor layer 15 having the i type, and the first amorphous semiconductor layer 15 of the first amorphous semiconductor layer 15 has the first conductivity type.
  • a second amorphous semiconductor region 17 having a second conductivity type can be formed in each of the two portions.
  • the first dopant-containing film 26 and the second dopant-containing film 27 may be heat-treated using a heating furnace.
  • the first dopant-containing film 26 and the second dopant-containing film 27 may be heat-treated by irradiating the first dopant-containing film 26 and the second dopant-containing film 27 with laser light.
  • the first impurity in the first amorphous semiconductor region 16 and the second impurity in the second amorphous semiconductor region 17 are processed. Impurities can be activated. In order to further activate the first impurity in the first amorphous semiconductor region 16 and the second impurity in the second amorphous semiconductor region 17, the first amorphous semiconductor region 16 and the second impurity The two amorphous semiconductor regions 17 may be further annealed.
  • first dopant-containing film 26 and second dopant-containing film 27 use a mixed solution of sulfuric acid and hydrogen peroxide solution, a mixed solution of hydrochloric acid and hydrogen peroxide solution, or hydrofluoric acid. Removed. Subsequently, the first electrode 18 and the second electrode 19 are formed on the second surface 11 b of the semiconductor substrate 11. Thus, the photoelectric conversion element 5 of the present embodiment shown in FIGS. 23 and 24 can be manufactured.
  • the manufacturing method of the photoelectric conversion element 5 of the present embodiment has the same effect as the manufacturing method of the photoelectric conversion element 5 of the ninth embodiment, but differs in the following points.
  • doping the first impurity in the first portion of the first amorphous semiconductor layer 15 causes the first amorphous semiconductor layer 15 to be doped.
  • Forming the first dopant-containing film 26 containing the first impurity, and transferring the first impurity contained in the first dopant-containing film 26 to the first portion of the first amorphous semiconductor layer 15 May be included.
  • Doping the second portion of the first amorphous semiconductor layer 15 with the second impurity means that the second dopant-containing film 27 containing the second impurity is formed on the first amorphous semiconductor layer 15.
  • a photoelectric conversion element having improved characteristics and reliability can be manufactured by a simple process.
  • forming the first dopant-containing film 26 containing the first impurity on the first amorphous semiconductor layer 15 is the first amorphous
  • a first doping paste containing a first impurity may be applied on the first portion of the semiconductor layer 15. Transferring the first impurity contained in the first dopant-containing film 26 to the first portion of the first amorphous semiconductor layer 15 may include heat-treating the first doping paste.
  • the formation of the second dopant-containing film 27 containing the second impurity on the first amorphous semiconductor layer 15 means that the second impurity is formed on the second portion of the first amorphous semiconductor layer 15.
  • a second doping paste containing may be applied. Transferring the second impurity contained in the second dopant-containing film 27 to the second portion of the first amorphous semiconductor layer 15 may include heat-treating the second doping paste.
  • doping the first impurity in the first portion of the first amorphous semiconductor layer 15 means that the first amorphous semiconductor layer 15 is not doped. Applying a first doping paste containing a first impurity on the first portion and heat-treating the first doping paste. Doping the second portion of the first amorphous semiconductor layer 15 with the second impurity means that the second portion of the first amorphous semiconductor layer 15 contains the second impurity. Applying the doping paste and heat-treating the second doping paste may be included.
  • the first amorphous semiconductor region 16 and the first amorphous semiconductor region 16 can be formed in the first amorphous semiconductor layer 15 with high pattern accuracy. Two amorphous semiconductor regions 17 may be formed.
  • a doping paste as the first dopant-containing film 26 and the second dopant-containing film 27, the first dopant-containing film 26 and the second dopant film are formed on the first amorphous semiconductor layer 15 by inkjet, screen printing, or the like.
  • the dopant-containing film 27 can be formed. According to the manufacturing method of the photoelectric conversion element 5 of this Embodiment, the photoelectric conversion element which has the improved characteristic and reliability can be manufactured by an inexpensive and simple process.
  • the photoelectric conversion element 5 of the present embodiment has a configuration similar to that of the photoelectric conversion element 5 of the ninth embodiment.
  • the manufacturing method of the photoelectric conversion element 5 of the present embodiment basically includes the same steps as the manufacturing method of the photoelectric conversion element 5 of the ninth embodiment, but differs in the following points.
  • the first and second impurities are doped into a part of the first amorphous semiconductor layer 15 by the ion implantation method.
  • doping the first impurity in the first portion of the first amorphous semiconductor layer 15 is the first amorphous semiconductor. Forming a first dopant-containing film including a first impurity on the layer, and removing the first impurity contained in the first dopant-containing film from the first amorphous semiconductor layer; Transition to the portion of the above.
  • doping the second impurity in the second portion of the first amorphous semiconductor layer 15 causes the first amorphous semiconductor layer 15 to be doped.
  • Forming the second dopant-containing film 27 containing the second impurity, and transferring the second impurity contained in the second dopant-containing film 27 to the second portion of the first amorphous semiconductor layer 15 It may further include.
  • transferring the first impurity contained in the first dopant-containing film 26 to the first portion of the first amorphous semiconductor layer 15 is one of the first dopant-containing films 26. Irradiation of the first laser beam 28 to the part may be included. The transfer of the second impurity contained in the second dopant-containing film 27 to the second portion of the first amorphous semiconductor layer 15 causes the second laser to be part of the second dopant-containing film 27. Irradiation with light 29 may be included. That is, the first and second impurities may be doped in the first and second portions of the first amorphous semiconductor layer 15 by laser doping, respectively.
  • the second amorphous semiconductor layer 12, the third amorphous semiconductor layer 13, and the first surface 11 a of the semiconductor substrate 11 are formed.
  • a dielectric layer 14 is formed, and a tunnel dielectric layer 20 and a first amorphous semiconductor layer 15 are formed on the second surface 11 b of the semiconductor substrate 11.
  • a first dopant-containing film 26 containing a first impurity having the first conductivity type is formed on the first amorphous semiconductor layer 15.
  • the first dopant-containing film 26 include phosphorus silicate glass (PSG), boron silicate glass (BSG), and polyboron film (PBF).
  • PSG phosphorus silicate glass
  • BSG boron silicate glass
  • PPF polyboron film
  • a part of the first dopant-containing film 26 is irradiated with the first laser light 28, and the first impurity contained in the first dopant-containing film 26 is changed into the first amorphous semiconductor layer 15. Transition to the first part.
  • a part of the first dopant-containing film 26 is locally heated by irradiating a part of the first dopant-containing film 26 with the first laser light 28.
  • the first amorphous semiconductor layer 15 only the region corresponding to the portion irradiated with the first laser light 28 (that is, the first portion of the first amorphous semiconductor layer 15)
  • the first impurity contained in the dopant-containing film 26 is doped.
  • the first amorphous semiconductor region 16 having the first conductivity type can be formed in the first portion of the first amorphous semiconductor layer 15 having the i type.
  • a part of the first dopant-containing film 26 and a first part of the first amorphous semiconductor layer 15 are formed. Heated locally.
  • the first laser beam 28 is irradiated to a part of the first dopant-containing film 26, the first impurity in the first amorphous semiconductor region 16 can be activated.
  • the remaining first dopant-containing film 26 is removed using a mixed solution of sulfuric acid and hydrogen peroxide solution, a mixed solution of hydrochloric acid and hydrogen peroxide solution, or hydrofluoric acid.
  • a second dopant-containing film 27 containing a second impurity having the second conductivity type is formed on the first amorphous semiconductor layer 15.
  • the second dopant-containing film 27 include phosphorus silicate glass (PSG), boron silicate glass (BSG), and polyboron film (PBF).
  • PSG phosphorus silicate glass
  • BSG boron silicate glass
  • PPF polyboron film
  • a part of the second dopant-containing film 27 is irradiated with the second laser light 29, and the second impurity contained in the second dopant-containing film 27 is removed from the first amorphous semiconductor layer 15. Transition to the second part.
  • a part of the second dopant-containing film 27 is locally heated by irradiating a part of the second dopant-containing film 27 with the second laser light 29.
  • the first amorphous semiconductor layer 15 only the region corresponding to the portion irradiated with the second laser light 29 (that is, the second portion of the first amorphous semiconductor layer 15)
  • the second impurity contained in the dopant-containing film 27 is doped. In this way, the second amorphous semiconductor region 17 having the second conductivity type can be formed in the second portion of the first amorphous semiconductor layer 15 having the i type.
  • the second laser light 29 may have the same wavelength as the first laser light 28.
  • a part of the second dopant-containing film 27 and a second part of the first amorphous semiconductor layer 15 are formed. Heated locally. Therefore, when the second laser beam 29 is irradiated to a part of the second dopant-containing film 27, the second impurity in the second amorphous semiconductor region 17 can be activated.
  • the remaining second dopant-containing film 27 is removed using a mixed solution of sulfuric acid and hydrogen peroxide solution, a mixed solution of hydrochloric acid and hydrogen peroxide solution, or hydrofluoric acid.
  • the second amorphous semiconductor region 17 may be further annealed.
  • the first electrode 18 and the second electrode 19 are formed on the second surface 11 b of the semiconductor substrate 11.
  • the manufacturing method of the photoelectric conversion element 5 of the present embodiment has the same effect as the manufacturing method of the photoelectric conversion element 5 of the ninth embodiment, but differs in the following points.
  • the first impurity contained in the first dopant-containing film 26 is transferred to the first portion of the first amorphous semiconductor layer 15. Irradiation of the first laser beam 28 to a part of the one dopant-containing film 26 may be included.
  • the transfer of the second impurity contained in the second dopant-containing film 27 to the second portion of the first amorphous semiconductor layer 15 causes the second laser to be part of the second dopant-containing film 27.
  • Irradiation with light 29 may be included. That is, the first and second impurities may be doped in the first and second portions of the first amorphous semiconductor layer 15 by laser doping, respectively.
  • the laser doping method can diffuse the dopant in a shorter time than the method of diffusing the dopant using a heating furnace. According to the manufacturing method of the photoelectric conversion element 5 of this Embodiment, the photoelectric conversion element which has the improved characteristic and reliability can be manufactured by an inexpensive and simple process.
  • the photoelectric conversion element 6 of Embodiment 12 is demonstrated.
  • the photoelectric conversion element 6 of the present embodiment is basically the same as the photoelectric conversion element 5 of the ninth embodiment, but differs in the following points.
  • At least one of the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 extends over the entire thickness of the first amorphous semiconductor layer 15. May be present. At least one of the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 may be in contact with the tunnel dielectric layer 20.
  • FIG. 6 A method for manufacturing the photoelectric conversion element 6 according to the twelfth embodiment will be described with reference to FIGS. 3, 4, 25 to 28, 36, and 37.
  • FIG. The manufacturing method of the photoelectric conversion element 6 of the present embodiment is basically the same as the manufacturing method of the photoelectric conversion element 5 of the ninth embodiment, but differs in the following points.
  • At least one of the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 is the whole of the first amorphous semiconductor layer 15. It may exist over the thickness. At least one of the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 may be in contact with the tunnel dielectric layer 20.
  • the second amorphous semiconductor layer 12, the third amorphous semiconductor layer 13, and the first surface 11 a of the semiconductor substrate 11 are formed.
  • a dielectric layer 14 is formed, and a tunnel dielectric layer 20 and a first amorphous semiconductor layer 15 are formed on the second surface 11 b of the semiconductor substrate 11.
  • the first amorphous semiconductor region 16 having the first conductivity type is formed in the first amorphous semiconductor layer 15.
  • the first amorphous semiconductor region 16 may exist over the entire thickness of the first amorphous semiconductor layer 15.
  • the formation of the first amorphous semiconductor region 16 in the first amorphous semiconductor layer 15 is because the first amorphous semiconductor layer 15 is formed in the first portion of the first amorphous semiconductor layer 15. Doping with a first impurity having a first conductivity type over a total thickness of fifteen.
  • doping the first portion of the first amorphous semiconductor layer 15 with the first impurity means that the first portion of the first amorphous semiconductor layer 15 is doped with the first impurity.
  • Ion implantation may be included. That is, the first impurity may be doped in the first portion of the first amorphous semiconductor layer 15 over the entire thickness of the first amorphous semiconductor layer 15 by ion implantation.
  • the first portion of the first amorphous semiconductor layer 15 is irradiated with the first ion beam 21 of the first impurity to the first portion of the first amorphous semiconductor layer 15.
  • the portion may be doped with the first impurity over the entire thickness of the first amorphous semiconductor layer 15.
  • the first amorphous semiconductor region 16 having the first conductivity type is formed in the first portion of the first amorphous semiconductor layer 15 over the entire thickness of the first amorphous semiconductor layer 15. May be.
  • a first mask 22 having an opening corresponding to the first portion of the first amorphous semiconductor layer 15 and covering the other portion of the first amorphous semiconductor layer 15 may be used. .
  • a second amorphous semiconductor region 17 having a second conductivity type different from the first conductivity type is formed in first amorphous semiconductor layer 15.
  • the second amorphous semiconductor region 17 may exist over the entire thickness of the first amorphous semiconductor layer 15.
  • the formation of the second amorphous semiconductor region 17 in the first amorphous semiconductor layer 15 causes the second portion of the first amorphous semiconductor layer 15 different from the first portion to be in the first portion.
  • doping the second portion of the first amorphous semiconductor layer 15 with the second impurity means that the second portion of the first amorphous semiconductor layer 15 is doped with the second impurity.
  • Ion implantation may be included. That is, the second impurity may be doped in the second portion of the first amorphous semiconductor layer 15 over the entire thickness of the first amorphous semiconductor layer 15 by ion implantation.
  • the second portion of the first amorphous semiconductor layer 15 is irradiated with the second ion beam 23 of the second impurity to the second portion of the first amorphous semiconductor layer 15.
  • the portion may be doped with the second impurity over the entire thickness of the first amorphous semiconductor layer 15.
  • the second amorphous semiconductor region 17 having the second conductivity type is formed in the second portion of the first amorphous semiconductor layer 15 over the entire thickness of the first amorphous semiconductor layer 15. May be.
  • a second mask 24 having an opening corresponding to the second portion of the first amorphous semiconductor layer 15 and covering the other portion of the first amorphous semiconductor layer 15 may be used.
  • the second surface 11 b of the semiconductor substrate 11 is covered with the tunnel dielectric layer 20.
  • the first amorphous semiconductor region 16 is formed by doping the first portion of the first amorphous semiconductor layer 15 with the first impurity having the first conductivity type
  • the first portion of the first amorphous semiconductor layer 15 is formed on the semiconductor substrate 11.
  • the tunnel dielectric layer 20 can be surely prevented from being doped with one impurity.
  • the second amorphous semiconductor region 17 is formed by doping the second portion of the first amorphous semiconductor layer 15 with the second impurity having the second conductivity type, the second portion of the first amorphous semiconductor layer 15 is formed on the semiconductor substrate 11.
  • the tunnel dielectric layer 20 can be surely prevented from being doped with two impurities. Heterojunction structure between the semiconductor substrate 11 and the first amorphous semiconductor region 16 via the tunnel dielectric layer 20, and the semiconductor substrate 11 and the second amorphous semiconductor region via the tunnel dielectric layer 20 Thus, the heterojunction structure between 17 can be reliably maintained.
  • the first amorphous semiconductor region 16 may be in contact with the tunnel dielectric layer 20.
  • the second amorphous semiconductor region 17 may be in contact with the tunnel dielectric layer 20.
  • the first direction for example, the x direction
  • the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 16 are alternately arranged
  • the first amorphous semiconductor layer 15 may exist between the amorphous semiconductor region 17 and the amorphous semiconductor region 17.
  • the first amorphous semiconductor region 16 having the first conductivity type and the second amorphous semiconductor region 17 having the second conductivity type are formed by the first amorphous semiconductor layer 15 having the i type. It may be separated.
  • the first impurity contained in the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 are In order to activate the contained second impurity, the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 may be annealed. Then, a first electrode 18 that is electrically connected to the first amorphous semiconductor region 16 is formed on the second surface 11 b of the semiconductor substrate 11. Specifically, the first electrode 18 is formed on the first amorphous semiconductor region 16. A second electrode 19 that is electrically connected to the second amorphous semiconductor region 17 is formed on the second surface 11 b of the semiconductor substrate 11. Specifically, the second electrode 19 is formed on the second amorphous semiconductor region 17.
  • the photoelectric conversion element 6 of the present embodiment shown in FIGS. 23 and 35 can be manufactured.
  • the photoelectric conversion element 6 and its manufacturing method of the present embodiment have the same effects as the photoelectric conversion element 5 of the ninth embodiment and its manufacturing method, but are different in the following points.
  • At least one of the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 extends over the entire thickness of the first amorphous semiconductor layer 15. May be present. According to the photoelectric conversion element 6 of the present embodiment, at least one of the distance between the first amorphous semiconductor region 16 and the semiconductor substrate 11 and the distance between the second amorphous semiconductor region 17 and the semiconductor substrate 11 is set. May decrease. Of the carriers generated in the semiconductor substrate 11 by light incident from the first surface 11a side of the semiconductor substrate 11, carriers corresponding to the first conductivity type of the first amorphous semiconductor region 16 are A single amorphous semiconductor region 16 can be collected with higher efficiency.
  • carriers corresponding to the second conductivity type of the second amorphous semiconductor region 17 are the first The two amorphous semiconductor regions 17 can be collected with higher efficiency. According to the photoelectric conversion element 6 of the present embodiment, the efficiency of converting light energy into electrical energy can be improved.
  • the tunnel dielectric layer 20 exists between the second surface 11 b of the semiconductor substrate 11 and the first amorphous semiconductor layer 15.
  • the first amorphous semiconductor region 16 is formed by doping the first portion of the first amorphous semiconductor layer 15 with the first impurity having the first conductivity type
  • the first portion of the first amorphous semiconductor layer 15 is formed on the semiconductor substrate 11.
  • the tunnel dielectric layer 20 can be surely prevented from being doped with one impurity.
  • the second amorphous semiconductor region 17 is formed by doping the second portion of the first amorphous semiconductor layer 15 with the second impurity having the second conductivity type
  • the second portion of the first amorphous semiconductor layer 15 is formed on the semiconductor substrate 11.
  • the tunnel dielectric layer 20 can be surely prevented from being doped with two impurities.
  • the first impurity in the first amorphous semiconductor region 16 and the second impurity in the second amorphous semiconductor region 17 are the semiconductor substrate. 11 can be reliably prevented from being doped.
  • the photoelectric conversion element 6 of the present embodiment includes a heterojunction structure between the semiconductor substrate 11 and the first amorphous semiconductor region 16 via the tunnel dielectric layer 20 and a semiconductor via the tunnel dielectric layer 20. A structure capable of reliably maintaining the heterojunction structure between the substrate 11 and the second amorphous semiconductor region 17 is provided. According to the photoelectric conversion element 6 of the present embodiment, a photoelectric conversion element having improved characteristics and reliability can be provided.
  • At least one of the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 is the whole of the first amorphous semiconductor layer 15. It may exist over the thickness.
  • the distance between the first amorphous semiconductor region 16 and the semiconductor substrate 11 and the distance between the second amorphous semiconductor region 17 and the semiconductor substrate 11 are determined. At least one may be reduced.
  • carriers corresponding to the first conductivity type of the first amorphous semiconductor region 16 are A single amorphous semiconductor region 16 can be collected with higher efficiency.
  • the photoelectric conversion element 6 of this Embodiment Among the carriers generated in the semiconductor substrate 11 by light incident from the first surface 11a side of the semiconductor substrate 11, carriers corresponding to the second conductivity type of the second amorphous semiconductor region 17 are the first The two amorphous semiconductor regions 17 can be collected with higher efficiency. According to the manufacturing method of the photoelectric conversion element 6 of this Embodiment, the photoelectric conversion element with which the efficiency which converts light energy into electrical energy was improved can be manufactured.
  • the second surface 11b of the semiconductor substrate 11 is formed into a tunnel dielectric before the first amorphous semiconductor layer 15 is doped with the first and second impurities. Covered by the body layer 20.
  • the first amorphous semiconductor region 16 is formed by doping the first portion of the first amorphous semiconductor layer 15 with the first impurity having the first conductivity type, the first portion of the first amorphous semiconductor layer 15 is formed on the semiconductor substrate 11.
  • the tunnel dielectric layer 20 can be surely prevented from being doped with one impurity.
  • the second amorphous semiconductor region 17 is formed by doping the second portion of the first amorphous semiconductor layer 15 with the second impurity having the second conductivity type, the second portion of the first amorphous semiconductor layer 15 is formed on the semiconductor substrate 11.
  • the tunnel dielectric layer 20 can be surely prevented from being doped with two impurities.
  • the first impurity in the first amorphous semiconductor region 16 and the second impurity in the second amorphous semiconductor region 17 are used. It can be reliably prevented that the semiconductor substrate 11 is doped with impurities.
  • the heterojunction structure between the semiconductor substrate 11 and the first amorphous semiconductor region 16 via the tunnel dielectric layer 20, and the tunnel dielectric layer can be reliably maintained.
  • a photoelectric conversion element having improved characteristics and reliability can be manufactured.
  • the photoelectric conversion element 6 of the present embodiment has a configuration similar to that of the photoelectric conversion element 6 of the twelfth embodiment.
  • the manufacturing method of the photoelectric conversion element 6 of the present embodiment basically includes the same steps as the manufacturing method of the photoelectric conversion element 6 of the twelfth embodiment, but differs in the following points.
  • the first amorphous semiconductor layer 15 is doped with the first and second impurities by the ion implantation method.
  • the first and second impurities are doped in the first amorphous semiconductor layer 15 by the same method as the method according to the tenth embodiment. Is done.
  • a first dopant-containing film 26 containing a first impurity having a first conductivity type and a second impurity having a second conductivity type are formed on the first amorphous semiconductor layer 15.
  • a second dopant-containing film 27 is formed. Then, the first dopant-containing film 26 and the second dopant-containing film 27 are heat-treated, so that the first impurity contained in the first dopant-containing film 26 and the second dopant-containing film 27 are contained. Impurities are transferred to the first amorphous semiconductor layer 15.
  • the second amorphous semiconductor layer 12, the third amorphous semiconductor layer 13, and the first surface 11 a of the semiconductor substrate 11 are formed.
  • a dielectric layer 14 is formed, and a tunnel dielectric layer 20 and a first amorphous semiconductor layer 15 are formed on the second surface 11 b of the semiconductor substrate 11.
  • a first dopant-containing film 26 containing a first impurity having the first conductivity type is formed on the first portion of the first amorphous semiconductor layer 15.
  • a second dopant-containing film 27 containing a second impurity having the second conductivity type is formed on the second portion of the amorphous semiconductor layer 15.
  • the first dopant-containing film 26 may be a first doping paste containing a first impurity having the first conductivity type.
  • the second dopant-containing film 27 may be a second doping paste containing a second impurity having the second conductivity type.
  • the first dopant-containing film 26 and the second dopant-containing film 27 are heat-treated, and the first impurity contained in the first dopant-containing film 26 is changed to the first amorphous semiconductor layer.
  • the second impurity contained in the second dopant-containing film 27 is transferred to the first portion of the first amorphous semiconductor layer 15 over the entire thickness of the first amorphous semiconductor layer 15.
  • the photoelectric conversion element of the present embodiment except that the first impurity and the second impurity are transferred to the first amorphous semiconductor layer 15 over the entire thickness of the first amorphous semiconductor layer 15.
  • the manufacturing method 6 is the same as the manufacturing method of the photoelectric conversion element 5 of the tenth embodiment.
  • the photoelectric conversion element 6 and its manufacturing method of the present embodiment have the effects of the photoelectric conversion element 6 and its manufacturing method of Embodiment 12, and the effects of the photoelectric conversion element 5 of Embodiment 10 and its manufacturing method. .
  • the photoelectric conversion element 6 of the present embodiment has a configuration similar to that of the photoelectric conversion element 6 of the twelfth embodiment.
  • the manufacturing method of the photoelectric conversion element 6 of the present embodiment basically includes the same steps as the manufacturing method of the photoelectric conversion element 6 of the twelfth embodiment, but differs in the following points.
  • the first amorphous semiconductor layer 15 is doped with the first and second impurities by the ion implantation method.
  • the first dopant-containing film 26 included in the first dopant-containing film 26 by laser doping.
  • the first impurity and the second impurity contained in the second dopant-containing film 27 are transferred to the first amorphous semiconductor layer 15.
  • FIG. 1 An example of a method for manufacturing the photoelectric conversion element 6 according to the present embodiment will be described below with reference to FIGS. 3, 4, 25 to 28, 39, and 40.
  • FIG. 1 An example of a method for manufacturing the photoelectric conversion element 6 according to the present embodiment will be described below with reference to FIGS. 3, 4, 25 to 28, 39, and 40.
  • FIG. 1 An example of a method for manufacturing the photoelectric conversion element 6 according to the present embodiment will be described below with reference to FIGS. 3, 4, 25 to 28, 39, and 40.
  • the second amorphous semiconductor layer 12, the third amorphous semiconductor layer 13, and the first surface 11 a of the semiconductor substrate 11 are formed.
  • a dielectric layer 14 is formed, and a tunnel dielectric layer 20 and a first amorphous semiconductor layer 15 are formed on the second surface 11 b of the semiconductor substrate 11.
  • a first dopant-containing film 26 containing a first impurity having the first conductivity type is formed on the first amorphous semiconductor layer 15. Subsequently, a part of the first dopant-containing film 26 is irradiated with the first laser light 28, and the first impurity contained in the first dopant-containing film 26 is changed into the first amorphous semiconductor layer 15. The first portion is moved over the entire thickness of the first amorphous semiconductor layer 15. Then, the remaining first dopant-containing film 26 is removed using a mixed solution of sulfuric acid and hydrogen peroxide solution, a mixed solution of hydrochloric acid and hydrogen peroxide solution, or hydrofluoric acid.
  • a second dopant-containing film 27 containing a second impurity having the second conductivity type is formed on the first amorphous semiconductor layer 15. Subsequently, a part of the second dopant-containing film 27 is irradiated with the second laser light 29, and the second impurity contained in the second dopant-containing film 27 is removed from the first amorphous semiconductor layer 15. The second portion is moved over the entire thickness of the first amorphous semiconductor layer 15.
  • the photoelectric conversion element of the present embodiment except that the first impurity and the second impurity are transferred to the first amorphous semiconductor layer 15 over the entire thickness of the first amorphous semiconductor layer 15.
  • the manufacturing method 6 is the same as the manufacturing method of the photoelectric conversion element 5 of the eleventh embodiment.
  • the photoelectric conversion element 6 of this Embodiment and its manufacturing method have the effect of the photoelectric conversion element 6 of Embodiment 12, and its manufacturing method, and the effect of the photoelectric conversion element 5 of Embodiment 11, and its manufacturing method. .
  • Embodiment 15 With reference to FIG. 41 and FIG. 42, the photoelectric conversion element 7 of Embodiment 15 will be described.
  • the photoelectric conversion element 7 and the manufacturing method thereof in the present embodiment are the same as the photoelectric conversion element 5 and the manufacturing method thereof in the ninth embodiment, but differ in the following points.
  • the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 17 are arranged in the first direction (for example, the x direction) in which the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 17 are alternately arranged.
  • the amorphous semiconductor region 16 and the second amorphous semiconductor region 17 may be in contact with each other.
  • the first direction for example, the x direction
  • the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 17 are alternately arranged. 2 except that the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 are in contact with each other, similar to the photoelectric conversion element 5 and the manufacturing method thereof according to the ninth to eleventh embodiments. It is.
  • the photoelectric conversion element 7 and the manufacturing method thereof according to the present embodiment have the same effects as the photoelectric conversion element 5 and the manufacturing method thereof according to the ninth to eleventh embodiments, but are different in the following points.
  • the photoelectric conversion element 7 of the present embodiment in the direction in which the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 17 are alternately arranged (first direction, for example, x direction), The first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 may be in contact with each other. According to the photoelectric conversion element 7 of the present embodiment, at least one area of the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 can be increased. Carriers generated in the semiconductor substrate 11 by light incident from the first surface 11a side of the semiconductor substrate 11 can be collected with high efficiency. According to the photoelectric conversion element 7 of the present embodiment, the efficiency of converting light energy into electrical energy can be improved.
  • the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 17 are alternately arranged (first direction, for example, the x direction). ), The first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 may be in contact with each other. According to the method for manufacturing the photoelectric conversion element 7 of the present embodiment, at least one area of the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 can be increased. Carriers generated in the semiconductor substrate 11 by light incident from the first surface 11a side of the semiconductor substrate 11 can be collected with high efficiency. According to the manufacturing method of the photoelectric conversion element 7 of this Embodiment, the photoelectric conversion element in which the efficiency which converts light energy into electrical energy was improved can be manufactured.
  • the photoelectric conversion element 8 according to the sixteenth embodiment will be described with reference to FIGS.
  • the photoelectric conversion element 8 and its manufacturing method of the present embodiment are the same as the photoelectric conversion element 6 and its manufacturing method of the twelfth embodiment, but differ in the following points.
  • the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 are arranged in the first direction (for example, the x direction) in which the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 are alternately arranged.
  • the amorphous semiconductor region 16 and the second amorphous semiconductor region 17 may be in contact with each other.
  • the first direction for example, the x direction
  • the first amorphous semiconductor regions 16 and the second amorphous semiconductor regions 17 are alternately arranged. 2 except that the first amorphous semiconductor region 16 and the second amorphous semiconductor region 17 are in contact with each other, similar to the photoelectric conversion element 6 and the manufacturing method thereof according to the twelfth to fourteenth embodiments. It is.
  • the photoelectric conversion element 8 and the manufacturing method thereof according to the present embodiment are the effects of the photoelectric conversion element 6 and the manufacturing method thereof according to Embodiments 12 to 14, and the photoelectric conversion element 7 and the manufacturing method thereof according to Embodiment 15. It has the effect of.
  • the photoelectric conversion element according to the embodiment disclosed herein is provided on a semiconductor substrate having a first surface and a second surface opposite to the first surface, and on the second surface.
  • the first amorphous semiconductor layer having i type and the second surface are provided on the second surface, and the first amorphous semiconductor region having the first conductivity type is provided on the second surface.
  • the first amorphous semiconductor region includes a first impurity having a first conductivity type.
  • the second amorphous semiconductor region includes a second impurity having the second conductivity type.
  • the first amorphous semiconductor layer, the first amorphous semiconductor region, and the second amorphous semiconductor region constitute one layer that extends continuously.
  • a structure that can be manufactured without exposing the second surface of the semiconductor substrate after the first amorphous semiconductor layer is formed on the second surface of the semiconductor substrate is described in the embodiment disclosed herein.
  • the photoelectric conversion element is provided.
  • Embodiments disclosed herein include a structure that can be manufactured without a contaminant adhering to the second surface of a semiconductor substrate or the second surface of a semiconductor substrate being roughened by etching an amorphous semiconductor layer.
  • the photoelectric conversion element is provided. According to the photoelectric conversion element of the embodiment disclosed herein, a photoelectric conversion element having improved characteristics and reliability can be provided.
  • the photoelectric conversion element according to the embodiment disclosed herein includes the second surface of the semiconductor substrate and the first amorphous semiconductor region, and the second surface of the semiconductor substrate and the second amorphous material.
  • a first amorphous semiconductor layer may be present between the crystalline semiconductor region.
  • the first amorphous semiconductor layer having i-type suppresses recombination of carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate on the second surface of the semiconductor substrate. can do.
  • the passivation characteristics and the efficiency of converting light energy into electric energy can be improved.
  • At least one of the first amorphous semiconductor region and the second amorphous semiconductor region is the entire first amorphous semiconductor layer. It may exist over the thickness. According to the photoelectric conversion element of the embodiment disclosed herein, at least one of the distance between the first amorphous semiconductor region and the semiconductor substrate and the distance between the second amorphous semiconductor region and the semiconductor substrate is reduced. Can do. Of the carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate, the carrier corresponding to the first conductivity type included in the first amorphous semiconductor region is the first amorphous. Higher efficiency can be collected by the quality semiconductor region.
  • carriers corresponding to the second conductivity type of the second amorphous semiconductor region are the second amorphous. Higher efficiency can be collected by the quality semiconductor region. According to the photoelectric conversion element of the embodiment disclosed herein, the efficiency of converting light energy into electric energy can be improved.
  • the photoelectric conversion element according to the embodiment disclosed herein is provided on a semiconductor substrate having a first surface and a second surface opposite to the first surface, and the second surface.
  • the first amorphous semiconductor region includes a first impurity having a first conductivity type.
  • the second amorphous semiconductor region includes a second impurity having the second conductivity type.
  • the first amorphous semiconductor layer, the first amorphous semiconductor region, and the second amorphous semiconductor region constitute one layer that extends continuously.
  • the photoelectric conversion element of the embodiment disclosed herein includes a tunnel dielectric layer on the second surface of the semiconductor substrate.
  • the tunnel dielectric layer can suppress recombination of carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate on the second surface of the semiconductor substrate. According to the photoelectric conversion element of the embodiment disclosed herein, a photoelectric conversion element having improved passivation characteristics can be provided.
  • the tunnel dielectric layer tunnels carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate to the first amorphous semiconductor region and the second amorphous semiconductor region. According to the photoelectric conversion element of the embodiment disclosed herein, carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate can be efficiently collected.
  • the second surface of the semiconductor substrate is formed after the tunnel dielectric layer and the first amorphous semiconductor layer are formed on the second surface of the semiconductor substrate. It has a structure that can be manufactured without exposing.
  • Embodiments disclosed herein include a structure that can be manufactured without a contaminant adhering to the second surface of a semiconductor substrate or the second surface of a semiconductor substrate being roughened by etching an amorphous semiconductor layer.
  • the photoelectric conversion element is provided. According to the photoelectric conversion element of the embodiment disclosed herein, a photoelectric conversion element having improved characteristics and reliability can be provided.
  • the photoelectric conversion element according to the embodiment disclosed herein includes a gap between the tunnel dielectric layer and the first amorphous semiconductor region, and a gap between the tunnel dielectric layer and the second amorphous semiconductor region.
  • a first amorphous semiconductor layer may be present.
  • the first amorphous semiconductor layer having i-type suppresses recombination of carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate on the second surface of the semiconductor substrate. can do.
  • the passivation characteristics and the efficiency of converting light energy into electric energy can be improved.
  • At least one of the first amorphous semiconductor region and the second amorphous semiconductor region is the whole of the first amorphous semiconductor layer. It may exist over the thickness. According to the photoelectric conversion element of the embodiment disclosed herein, at least one of the distance between the first amorphous semiconductor region and the semiconductor substrate and the distance between the second amorphous semiconductor region and the semiconductor substrate is reduced. Can do. Of the carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate, the carrier corresponding to the first conductivity type included in the first amorphous semiconductor region is the first amorphous. Higher efficiency can be collected by the quality semiconductor region.
  • carriers corresponding to the second conductivity type of the second amorphous semiconductor region are the second amorphous. Higher efficiency can be collected by the quality semiconductor region. According to the photoelectric conversion element of the embodiment disclosed herein, the efficiency of converting light energy into electric energy can be improved.
  • a tunnel dielectric layer exists between the second surface of the semiconductor substrate and the first amorphous semiconductor layer.
  • the first amorphous semiconductor region is formed by doping the first portion of the first amorphous semiconductor layer with the first impurity having the first conductivity type, the first impurity is formed in the semiconductor substrate.
  • the tunnel dielectric layer can be reliably prevented from being doped.
  • the second amorphous semiconductor region is formed by doping the second portion of the first amorphous semiconductor layer with the second impurity having the second conductivity type, the second impurity is formed in the semiconductor substrate.
  • the tunnel dielectric layer can be reliably prevented from being doped.
  • the first impurity in the first amorphous semiconductor region and the second impurity in the second amorphous semiconductor region are semiconductors.
  • a structure that can surely prevent the substrate from being doped is provided.
  • the photoelectric conversion element according to the embodiment disclosed herein includes a heterojunction structure between a semiconductor substrate and a first amorphous semiconductor region via a tunnel dielectric layer, and a semiconductor substrate via a tunnel dielectric layer And a heterojunction structure between the second amorphous semiconductor region and the second amorphous semiconductor region. According to the photoelectric conversion element of the embodiment disclosed herein, a photoelectric conversion element having improved characteristics and reliability can be provided.
  • the first amorphous semiconductor region and the second amorphous semiconductor region are arranged in the direction in which the first amorphous semiconductor region and the second amorphous semiconductor region are alternately arranged.
  • the first amorphous semiconductor region having the first conductivity type and the second amorphous semiconductor region having the second conductivity type are separated by the first amorphous semiconductor layer having the i type. Also good.
  • the efficiency of converting light energy into electric energy can be improved.
  • the first amorphous semiconductor region and the second amorphous semiconductor region are arranged in the direction in which the first amorphous semiconductor region and the second amorphous semiconductor region are alternately arranged.
  • the semiconductor region and the second amorphous semiconductor region may be in contact with each other.
  • at least one area of the first amorphous semiconductor region and the second amorphous semiconductor region can be increased.
  • Carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate can be collected with high efficiency.
  • the efficiency of converting light energy into electric energy can be improved.
  • the tunnel dielectric layer may have a thickness of 0.2 nm to 5.0 nm.
  • the tunnel dielectric layer having a thickness of 0.2 nm or more can further improve the passivation characteristics of the photoelectric conversion element.
  • the tunnel dielectric layer having a thickness of 5.0 nm or less allows carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate to be generated in the first amorphous semiconductor region and the second amorphous semiconductor region. Tunneling to the amorphous semiconductor region can be performed more efficiently.
  • carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate can be collected more efficiently.
  • the photoelectric conversion element according to the embodiment disclosed herein is provided on the second surface of the semiconductor substrate and has a first electrode electrically connected to the first amorphous semiconductor region. And a second electrode provided on the second surface of the semiconductor substrate and electrically connected to the second amorphous semiconductor region.
  • the first electrode and the second electrode are not provided on the first surface side of the semiconductor substrate which is a light incident surface. Light incident on the photoelectric conversion element is not blocked by the first electrode and the second electrode. According to the photoelectric conversion element of the embodiment disclosed herein, a high short-circuit current J SC can be obtained, and the efficiency of converting light energy into electrical energy can be improved.
  • the photoelectric conversion element of the embodiment disclosed herein may further include a dielectric layer on the first surface of the semiconductor substrate.
  • the dielectric layer functions as an antireflection film, the dielectric layer can allow more light to enter the photoelectric conversion element.
  • the efficiency of converting light energy into electric energy can be improved.
  • the dielectric layer functions as a passivation film, the dielectric layer is such that carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate are recombined on the first surface of the semiconductor substrate. Can be suppressed.
  • the efficiency of converting light energy into electric energy can be improved.
  • the photoelectric conversion element of the embodiment disclosed herein may further include an i-type second amorphous semiconductor layer on the first surface of the semiconductor substrate.
  • the second amorphous semiconductor layer having i-type suppresses recombination of carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate on the first surface of the semiconductor substrate. can do.
  • the passivation characteristics and the efficiency of converting light energy into electric energy can be improved.
  • the photoelectric conversion element of the embodiment disclosed herein may further include a third amorphous semiconductor layer having the same conductivity type as that of the semiconductor substrate on the first surface of the semiconductor substrate.
  • the third amorphous semiconductor layer having the same conductivity type as that of the semiconductor substrate has a carrier that is close to the first surface of the semiconductor substrate among carriers generated in the semiconductor substrate when light is incident on the photoelectric conversion element. It can be pushed back into the substrate.
  • the fourth amorphous semiconductor layer can suppress recombination of the carriers on the first surface of the semiconductor substrate. According to the photoelectric conversion element of the embodiment disclosed herein, the passivation characteristics and the efficiency of converting light energy into electric energy can be improved.
  • the first surface of the semiconductor substrate may include an uneven structure.
  • the concavo-convex structure on the first surface of the semiconductor substrate which is the light incident surface, more light can be incident into the photoelectric conversion element.
  • the efficiency of converting light energy into electric energy can be improved.
  • a second surface of a semiconductor substrate having a first surface and a second surface opposite to the first surface, forming a first amorphous semiconductor layer having i-type, forming a first amorphous semiconductor region having a first conductivity type in the first amorphous semiconductor layer, Forming a second amorphous semiconductor region having a second conductivity type different from the first conductivity type in the one amorphous semiconductor layer.
  • the formation of the first amorphous semiconductor region in the first amorphous semiconductor layer means that the first impurity having the first conductivity type is formed in the first portion of the first amorphous semiconductor layer.
  • the formation of the second amorphous semiconductor region in the first amorphous semiconductor layer has a second conductivity type in the second portion of the first amorphous semiconductor layer different from the first portion. Doping with a second impurity.
  • the photoelectric conversion element can be manufactured without exposing the second surface of the semiconductor substrate.
  • the photoelectric conversion element can be manufactured without a contaminant adhering to the second surface of the semiconductor substrate and without causing the second surface of the semiconductor substrate to be roughened by etching the amorphous semiconductor layer. According to the method for manufacturing a photoelectric conversion element of the embodiment disclosed herein, a photoelectric conversion element having improved characteristics and reliability can be manufactured.
  • the second surface of the semiconductor substrate and the first amorphous semiconductor region, the second surface of the semiconductor substrate, and the second A first amorphous semiconductor layer may be present between the amorphous semiconductor region.
  • the first amorphous semiconductor layer having i-type suppresses recombination of carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate on the second surface of the semiconductor substrate. can do.
  • a photoelectric conversion element with improved passivation characteristics and efficiency of converting light energy into electric energy can be manufactured.
  • At least one of the first amorphous semiconductor region and the second amorphous semiconductor region is a first amorphous semiconductor. It may be present over the entire thickness of the layer.
  • at least the distance between the first amorphous semiconductor region and the semiconductor substrate and the distance between the second amorphous semiconductor region and the semiconductor substrate are at least. One can be reduced.
  • the carrier corresponding to the first conductivity type included in the first amorphous semiconductor region is the first amorphous. Higher efficiency can be collected by the quality semiconductor region.
  • carriers corresponding to the second conductivity type of the second amorphous semiconductor region are the second amorphous. Higher efficiency can be collected by the quality semiconductor region. According to the method for manufacturing a photoelectric conversion element of the embodiment disclosed herein, a photoelectric conversion element with improved efficiency of converting light energy into electric energy can be manufactured.
  • a tunnel is formed on a second surface of a semiconductor substrate having a first surface and a second surface opposite to the first surface.
  • the formation of the first amorphous semiconductor region in the first amorphous semiconductor layer means that the first impurity having the first conductivity type is formed in the first portion of the first amorphous semiconductor layer. Doping.
  • the formation of the second amorphous semiconductor region in the first amorphous semiconductor layer has a second conductivity type in the second portion of the first amorphous semiconductor layer different from the first portion. Doping with a second impurity.
  • the method for manufacturing the photoelectric conversion element according to the embodiment disclosed herein includes forming a tunnel dielectric layer on the second surface of the semiconductor substrate.
  • the tunnel dielectric layer can suppress recombination of carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate on the second surface of the semiconductor substrate.
  • a photoelectric conversion element having improved passivation characteristics can be manufactured.
  • the tunnel dielectric layer tunnels carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate to the first amorphous semiconductor region and the second amorphous semiconductor region.
  • photoelectrics that can efficiently collect carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate.
  • a conversion element can be manufactured.
  • the photoelectric conversion element before the first amorphous semiconductor region and the second amorphous semiconductor region are formed in the first amorphous semiconductor layer.
  • the second surface of the semiconductor substrate is covered with a tunnel dielectric layer.
  • the photoelectric conversion element can be manufactured without exposing the second surface of the semiconductor substrate.
  • the photoelectric conversion element can be manufactured without a contaminant adhering to the second surface of the semiconductor substrate and without causing the second surface of the semiconductor substrate to be roughened by etching the amorphous semiconductor layer. According to the method for manufacturing a photoelectric conversion element of the embodiment disclosed herein, a photoelectric conversion element having improved characteristics and reliability can be manufactured.
  • a first amorphous semiconductor layer may be present between the two.
  • the first amorphous semiconductor layer having i-type suppresses recombination of carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate on the second surface of the semiconductor substrate. can do.
  • a photoelectric conversion element with improved passivation characteristics and efficiency of converting light energy into electric energy can be manufactured.
  • At least one of the first amorphous semiconductor region and the second amorphous semiconductor region is a first amorphous semiconductor. It may be present over the entire thickness of the layer.
  • at least the distance between the first amorphous semiconductor region and the semiconductor substrate and the distance between the second amorphous semiconductor region and the semiconductor substrate are at least. One can be reduced.
  • the carrier corresponding to the first conductivity type included in the first amorphous semiconductor region is the first amorphous. Higher efficiency can be collected by the quality semiconductor region.
  • carriers corresponding to the second conductivity type of the second amorphous semiconductor region are the second amorphous. Higher efficiency can be collected by the quality semiconductor region. According to the method for manufacturing a photoelectric conversion element of the embodiment disclosed herein, a photoelectric conversion element with improved efficiency of converting light energy into electric energy can be manufactured.
  • the second surface of the semiconductor substrate is tunnel dielectric before the first amorphous semiconductor layer is doped with the first and second impurities. Covered by body layers.
  • the first amorphous semiconductor region is formed by doping the first portion of the first amorphous semiconductor layer with the first impurity having the first conductivity type, the first impurity is formed in the semiconductor substrate.
  • the tunnel dielectric layer can be reliably prevented from being doped.
  • the second amorphous semiconductor region is formed by doping the second portion of the first amorphous semiconductor layer with the second impurity having the second conductivity type, the second impurity is formed in the semiconductor substrate.
  • the tunnel dielectric layer can be reliably prevented from being doped.
  • the first impurity in the first amorphous semiconductor region and the second impurity in the second amorphous semiconductor region can be reliably prevented that the semiconductor substrate is doped with the impurities.
  • the heterojunction structure between the semiconductor substrate and the first amorphous semiconductor region via the tunnel dielectric layer, and the tunnel dielectric layer Therefore, the heterojunction structure between the semiconductor substrate and the second amorphous semiconductor region can be reliably maintained.
  • a photoelectric conversion element having improved characteristics and reliability can be manufactured.
  • the first amorphous semiconductor region and the second amorphous semiconductor region layer are arranged in a direction in which the first amorphous semiconductor region layer and the second amorphous semiconductor region layer are alternately arranged.
  • a first amorphous semiconductor layer may exist between the amorphous semiconductor region and the second amorphous semiconductor region.
  • the first amorphous semiconductor region having the first conductivity type and the second amorphous semiconductor region having the second conductivity type are separated by the first amorphous semiconductor layer having the i type. Also good.
  • a photoelectric conversion element with improved efficiency of converting light energy into electric energy can be manufactured.
  • the first amorphous semiconductor region and the second amorphous semiconductor region are arranged in a direction in which the first amorphous semiconductor region and the second amorphous semiconductor region are alternately arranged.
  • the amorphous semiconductor region and the second amorphous semiconductor region may be in contact with each other.
  • at least one area of the first amorphous semiconductor region and the second amorphous semiconductor region can be increased. Carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate can be collected with high efficiency.
  • a photoelectric conversion element with improved efficiency of converting light energy into electric energy can be manufactured.
  • doping the first impurity in the first portion of the first amorphous semiconductor layer is the first amorphous Ion implantation of the first impurity into the first portion of the semiconductor layer may be included.
  • Doping the second impurity in the second portion of the first amorphous semiconductor layer may include implanting the second impurity into the second portion of the first amorphous semiconductor layer. Good.
  • a photoelectric conversion element having improved characteristics and reliability can be manufactured by a simple process.
  • doping the first impurity in the first portion of the first amorphous semiconductor layer is the first amorphous Forming a first dopant-containing film containing a first impurity on the semiconductor layer; and applying the first impurity contained in the first dopant-containing film to the first portion of the first amorphous semiconductor layer Migrating.
  • Doping a second impurity in the second portion of the first amorphous semiconductor layer forms a second dopant-containing film containing the second impurity on the first amorphous semiconductor layer.
  • transferring the second impurity contained in the second dopant-containing film to the second portion of the first amorphous semiconductor layer According to the method for manufacturing a photoelectric conversion element of the embodiment disclosed herein, a photoelectric conversion element having improved characteristics and reliability can be manufactured by a simple process.
  • forming the first dopant-containing film containing the first impurity on the first amorphous semiconductor layer is the first
  • a first doping paste containing a first impurity may be applied on the first portion of the amorphous semiconductor layer. Transferring the first impurity contained in the first dopant-containing film to the first portion of the first amorphous semiconductor layer may include heat-treating the first doping paste.
  • Forming the second dopant-containing film containing the second impurity on the first amorphous semiconductor layer includes forming the second dopant-containing film on the second portion of the first amorphous semiconductor layer. 2 doping paste may be applied.
  • Transferring the second impurity contained in the second dopant-containing film to the second portion of the first amorphous semiconductor layer may include heat-treating the second doping paste.
  • doping the first impurity in the first portion of the first amorphous semiconductor layer is the first amorphous semiconductor.
  • Applying a first doping paste containing a first impurity on the first portion of the layer and heat treating the first doping paste may be included.
  • Doping the second impurity in the second portion of the first amorphous semiconductor layer means that the second doping paste containing the second impurity on the second portion of the first amorphous semiconductor layer And heat-treating the second doping paste.
  • the first amorphous semiconductor region and the second amorphous semiconductor region are formed in the first amorphous semiconductor layer with high pattern accuracy. Can be formed.
  • the first and second dopant-containing films can be formed on the first amorphous semiconductor layer by inkjet, screen printing, or the like. According to the method for manufacturing a photoelectric conversion element of the embodiment disclosed herein, a photoelectric conversion element having improved characteristics and reliability can be manufactured at a low cost and with a simple process.
  • the first impurity contained in the first dopant-containing film is transferred to the first portion of the first amorphous semiconductor layer. This may include irradiating a part of the first dopant-containing film with the first laser beam. Transferring the second impurity contained in the second dopant-containing film to the second portion of the first amorphous semiconductor layer irradiates a part of the second dopant-containing film with the second laser beam. May include. That is, the first amorphous semiconductor layer may be doped with the first and second impurities by a laser doping method.
  • the laser doping method can diffuse the dopant in a shorter time than the method of diffusing the dopant using a heating furnace. According to the method for manufacturing a photoelectric conversion element of the embodiment disclosed herein, a photoelectric conversion element having improved characteristics and reliability can be manufactured at a low cost and with a simple process.
  • forming the tunnel dielectric layer on the second surface of the semiconductor substrate may include forming the second surface of the semiconductor substrate with ozone water or It may include soaking in hydrogen peroxide solution.
  • the tunnel dielectric layer is quickly formed by a simple process of immersing the second surface of the semiconductor substrate in ozone water or hydrogen peroxide water. Can be done.
  • the tunnel dielectric layer in the method for manufacturing a photoelectric conversion element according to the embodiment disclosed herein, forming the tunnel dielectric layer on the second surface of the semiconductor substrate thermally oxidizes the second surface of the semiconductor substrate. You may include that. According to the method for manufacturing a photoelectric conversion element of the embodiment disclosed herein, the tunnel dielectric layer can be formed by a simple process of thermally oxidizing the second surface of the semiconductor substrate.
  • forming the tunnel dielectric layer on the second surface of the semiconductor substrate includes forming a tunnel dielectric on the second surface of the semiconductor substrate. It may include depositing a body layer. According to the method for manufacturing a photoelectric conversion element of the embodiment disclosed herein, the tunnel dielectric layer can be formed by a simple process of depositing the tunnel dielectric layer on the second surface of the semiconductor substrate.
  • the tunnel dielectric layer may have a thickness of 0.2 nm or more and 5.0 nm or less.
  • the tunnel dielectric layer having a thickness of 0.2 nm or more can further improve the passivation characteristics of the photoelectric conversion element.
  • the tunnel dielectric layer having a thickness of 5.0 nm or less allows carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate to be generated in the first amorphous semiconductor region and the second amorphous semiconductor region. Tunneling to the amorphous semiconductor region can be performed more efficiently.
  • carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate can be collected more efficiently.
  • a photoelectric conversion element can be manufactured.
  • the first electrode electrically connected to the first amorphous semiconductor region is provided on the second surface of the semiconductor substrate.
  • the method may further include forming and forming a second electrode electrically connected to the second amorphous semiconductor region on the second surface of the semiconductor substrate.
  • the first electrode and the second electrode are not provided on the first surface side of the semiconductor substrate which is the light incident surface. An element can be manufactured. Light incident on the photoelectric conversion element is not blocked by the first electrode and the second electrode.
  • a photoelectric conversion element having a high short-circuit current JSC and improved efficiency in converting light energy into electric energy can be manufactured.
  • the method for manufacturing a photoelectric conversion element according to the embodiment disclosed herein may further include forming a dielectric layer on the first surface of the semiconductor substrate.
  • the dielectric layer functions as an antireflection film, the dielectric layer can allow more light to enter the photoelectric conversion element.
  • a photoelectric conversion element with improved efficiency of converting light energy into electric energy can be manufactured.
  • the dielectric layer functions as a passivation film, the dielectric layer is such that carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate are recombined on the first surface of the semiconductor substrate. Can be suppressed.
  • a photoelectric conversion element with improved efficiency of converting light energy into electric energy can be manufactured.
  • the method for manufacturing a photoelectric conversion element according to the embodiment disclosed herein further includes forming a second amorphous semiconductor layer having i-type on the first surface of the semiconductor substrate. Also good.
  • the second amorphous semiconductor layer having i-type suppresses recombination of carriers generated in the semiconductor substrate by light incident from the first surface side of the semiconductor substrate on the first surface of the semiconductor substrate. can do.
  • a photoelectric conversion element with improved passivation characteristics and efficiency of converting light energy into electric energy can be manufactured.
  • a third amorphous semiconductor layer having the same conductivity type as the semiconductor substrate is formed on the first surface of the semiconductor substrate. May be further provided.
  • the third amorphous semiconductor layer having the same conductivity type as that of the semiconductor substrate has a carrier that is close to the first surface of the semiconductor substrate among carriers generated in the semiconductor substrate when light is incident on the photoelectric conversion element. It can be pushed back into the substrate.
  • the third amorphous semiconductor layer can suppress recombination of this carrier on the first surface of the semiconductor substrate. According to the method for manufacturing a photoelectric conversion element of the embodiment disclosed herein, a photoelectric conversion element with improved passivation characteristics and efficiency of converting light energy into electric energy can be manufactured.
  • the method for manufacturing a photoelectric conversion element according to the embodiment disclosed herein may further include forming a concavo-convex structure on the first surface of the semiconductor substrate.
  • a concavo-convex structure on the first surface of the semiconductor substrate that is the light incident surface, more light can be incident on the photoelectric conversion element.
  • a photoelectric conversion element manufacturing method of the photoelectric conversion element of the embodiment disclosed herein a photoelectric conversion element with improved efficiency of converting light energy into electric energy can be manufactured.
  • 1,2,3,4,5,6,7,8 photoelectric conversion element 11 semiconductor substrate, 11a first surface, 11b second surface, 11c first side, 11d second side, 12 second Amorphous semiconductor layer, 13 third amorphous semiconductor layer, 14 dielectric layer, 15 first amorphous semiconductor layer, 16 first amorphous semiconductor region, 17 second amorphous semiconductor Region, 18 first electrode, 19 second electrode, 20 tunnel dielectric layer, 21 first ion beam, 22 first mask, 23 second ion beam, 24 second mask, 26 first Dopant-containing film, 27 second dopant-containing film, 28 first laser beam, 29 second laser beam.

Abstract

L'invention concerne un transducteur photoélectrique (1) comprenant : une première couche semi-conductrice non cristalline de type i (15) disposée sur une deuxième surface (11b) d'un substrat semi-conducteur (11) ; une première région semi-conductrice non cristalline (16) disposée sur la deuxième surface (11b) et dotée d'un premier type de conductivité ; et une deuxième région semi-conductrice non cristalline (17) disposée sur la deuxième surface (11b) et dotée d'un deuxième type de conductivité différent du premier type de conductivité. La première région semi-conductrice non cristalline (16) comprend une première impureté qui est du premier type de conductivité. La deuxième région semi-conductrice non cristalline (17) comprend une deuxième impureté qui est du deuxième type de conductivité. La première couche semi-conductrice non cristalline (15), la première région semi-conductrice non cristalline (16) et la deuxième région semi-conductrice non cristalline (17) constituent une couche unique qui s'étend en continu. Ainsi, le transducteur photoélectrique (1) selon l'invention présente des caractéristiques et une fiabilité améliorées.
PCT/JP2016/073871 2015-09-18 2016-08-16 Transducteur photoélectrique et procédé de production associé WO2017047310A1 (fr)

Applications Claiming Priority (4)

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JP2015-185469 2015-09-18
JP2015-185467 2015-09-18
JP2015185469A JP2017059763A (ja) 2015-09-18 2015-09-18 光電変換素子及びその製造方法
JP2015185467A JP2017059761A (ja) 2015-09-18 2015-09-18 光電変換素子及びその製造方法

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11112011A (ja) * 1997-09-30 1999-04-23 Sanyo Electric Co Ltd 光起電力素子の製造方法
JP2009535845A (ja) * 2006-05-04 2009-10-01 サンパワー コーポレイション ドーピングされた半導体ヘテロ接合電極を有する太陽電池
JP2012164961A (ja) * 2011-02-08 2012-08-30 Samsung Sdi Co Ltd 太陽電池およびその製造方法
JP2013214672A (ja) * 2012-04-04 2013-10-17 Sharp Corp 光電変換素子
JP2014123692A (ja) * 2012-12-19 2014-07-03 Junji Hirokane 光起電力素子およびその製造方法
JP2015142139A (ja) * 2014-01-29 2015-08-03 エルジー エレクトロニクス インコーポレイティド 太陽電池及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11112011A (ja) * 1997-09-30 1999-04-23 Sanyo Electric Co Ltd 光起電力素子の製造方法
JP2009535845A (ja) * 2006-05-04 2009-10-01 サンパワー コーポレイション ドーピングされた半導体ヘテロ接合電極を有する太陽電池
JP2012164961A (ja) * 2011-02-08 2012-08-30 Samsung Sdi Co Ltd 太陽電池およびその製造方法
JP2013214672A (ja) * 2012-04-04 2013-10-17 Sharp Corp 光電変換素子
JP2014123692A (ja) * 2012-12-19 2014-07-03 Junji Hirokane 光起電力素子およびその製造方法
JP2015142139A (ja) * 2014-01-29 2015-08-03 エルジー エレクトロニクス インコーポレイティド 太陽電池及びその製造方法

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