WO2017016362A1 - 一种跨尺度结构协同工作的无掩模光刻系统 - Google Patents
一种跨尺度结构协同工作的无掩模光刻系统 Download PDFInfo
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- WO2017016362A1 WO2017016362A1 PCT/CN2016/087415 CN2016087415W WO2017016362A1 WO 2017016362 A1 WO2017016362 A1 WO 2017016362A1 CN 2016087415 W CN2016087415 W CN 2016087415W WO 2017016362 A1 WO2017016362 A1 WO 2017016362A1
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- lithography system
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- exposure unit
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2057—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
Definitions
- the present invention relates to the field of lithography, and in particular to a maskless lithography system that works in cooperation across a scale structure.
- a light incident waveguide having a micron-precision waveguide has an area of about 198,000 um 2
- a high-precision structure having a nano-scale precision has an area of 4500 2 2 , The ratio is 44:1.
- micro-nano structures or devices containing various scale structures are often manufactured in turn by various methods, such as ultraviolet masked lithography to fabricate large-area micro-precision structures, and then photolithographic techniques such as electron beam are used to fabricate nano-scale structures.
- various methods such as ultraviolet masked lithography to fabricate large-area micro-precision structures, and then photolithographic techniques such as electron beam are used to fabricate nano-scale structures.
- photolithographic techniques such as electron beam are used to fabricate nano-scale structures.
- Maskless lithography based on surface light modulator for surface projection exposure is suitable for making sub-micron precision 2D or 3D large area complex structures
- laser direct writing technology such as femtosecond laser double Photon processing technology is suitable for making two-dimensional or true three-dimensional structures with small-area nanometer-scale precision.
- Both of these techniques are directly processed by the data of the graphics, directly controlled by the computer according to the data file to control the movement of the mobile station or the deflection of the DMD micromirror. Both methods use photon beam processing, and the space environment requirements are the same, so they can be integrated for one-time forming of cross-scale complex structures. There is currently no system or method that combines these two technologies to achieve cross-scale structural processing.
- the object of the present invention is to provide a maskless lithography system that works in cooperation with a cross-scale structure, comprising a laser point-by-point scanning exposure unit, a surface projection exposure unit, a mobile station and a calculation control unit, wherein the calculation control unit will display the image to be exposed Performing decomposition so that the pattern whose accuracy is below a predetermined threshold is exposed by the laser point-by-point scanning unit, the pattern requiring accuracy greater than a predetermined threshold is exposed by the surface projection exposure unit; laser spot by point on the sample on the mobile station When the scanning exposure is performed, according to the pattern whose accuracy is below a predetermined threshold, the light emitted by the laser scanning point-by-point scanning unit moves relative to the sample, thereby realizing laser-by-point scanning exposure of the sample; and performing surface projection exposure on the sample
- the surface projection exposure unit emits light having a corresponding pattern shape onto the sample according to the pattern whose accuracy requirement is greater than a predetermined threshold to achieve surface projection exposure of the sample.
- the laser point-by-point scanning exposure unit comprises: a first light source, a first beam expanding lens group, a first light transmission direction adjusting optical component, and a first objective lens, wherein the first light source is emitted for laser Light that is scanned point by point; the first beam expanding lens group expands the light emitted by the first light source into parallel light; the first light transmission direction adjusting optical component expands the parallel after the first beam expanding lens group Light is introduced into the first objective lens; the first objective lens focuses the introduced light onto the sample.
- the surface projection exposure unit comprises: a second light source, a second beam expander lens group, a spatial light modulation device, a second light transmission direction adjustment optical component, and a second objective lens, wherein the second light source exits Light for surface projection exposure lithography; the second beam expanding lens group is for expanding the light emitted by the second light source into parallel light; according to the calculation, the precision required by the control unit is greater than a predetermined threshold, the space
- the light modulating device modulates the parallel light expanded by the second expanded lens group into parallel light having the corresponding pattern shape and exits to the second light transmission direction adjusting optical component; the second light transmission direction adjusting optical component
- the parallel light having a corresponding pattern shape is focused on a front focal plane of the second objective lens; the second objective lens projects parallel light onto the sample.
- the laser point-by-point scanning exposure unit comprises: a first light source, a first beam expanding lens group, a first light transmission direction adjusting optical component, and a first objective lens, wherein the first light source is emitted for laser Light that is scanned point by point; the first beam expanding lens group expands the light emitted by the first light source into parallel light; the first light transmission direction adjusting optical component expands the parallel after the first beam expanding lens group Light is introduced into the first objective lens; the first objective lens focuses the introduced light on the sample, and wherein the surface projection exposure unit comprises: a second light source, a second beam expander lens group, a spatial light modulation device, and a second light a transmission direction adjusting optical component, and the first objective lens, wherein the second light source emits light for surface projection exposure lithography; and the second beam expanding lens group is configured to expand the light emitted by the second light source into parallel light And the spatial light modulation device modulates the parallel light expanded by the second beam expanding lens group to have the corresponding graphic
- the laser point-by-point scanning exposure unit further includes: a first shutter disposed between the first light source and the first beam expander lens group for adjusting the laser under the control of the calculation control unit The exposure unit exposure time is scanned point by point.
- the first shutter is a first mechanical shutter or a first light modulator.
- the laser point-by-point scanning exposure unit further includes: a first energy control component disposed between the first light source and the first shutter for adjusting energy of light emitted by the first light source or power.
- the first energy control component is an absorptive optical attenuator, a polarizer, a half slide, or an acousto-optic modulator.
- the first light transmission direction adjusting optical component comprises: a first mirror and a first dichroic mirror, wherein the parallel light expanded by the first beam expanding lens group sequentially passes through the first reflection The mirror and the first dichroic mirror are introduced into the first objective lens.
- the laser point-by-point scanning exposure unit further includes: a two-dimensional galvanometer disposed between the first mirror and the first dichroic mirror.
- the first light source is a continuous laser source or a pulsed laser source
- the wavelength adjustment range is 157 nm-1064 nm
- the polarization state is linear polarization, circular polarization or elliptically polarized
- the frequency of the pulsed laser source is 1 Hz- 100MHz.
- the first objective lens has a magnification of 1-200 and a numerical aperture of 0.001-1.8.
- the surface projection exposure unit further includes: a second shutter disposed between the second light source and the second beam expander lens group for adjusting the surface projection exposure under the control of the calculation control unit Unit exposure time.
- the second shutter is a second mechanical shutter or a second light modulator.
- the surface projection exposure unit further includes: a second energy control component disposed between the second light source and the second shutter for adjusting energy or power of light emitted by the second light source.
- the second energy control component is an absorptive optical attenuator, a polarizer, a half slide, or an acousto-optic modulator.
- the second light transmission direction adjusting optical component includes: a second lens and a second dichroic mirror, wherein the parallel light having a corresponding pattern shape sequentially passes through the second lens and the The dichroic mirror is focused on the front focal plane of the second objective lens.
- the second light transmission direction adjusting optical component comprises: a second lens, a second dichroic mirror and the first dichroic mirror, wherein the parallel light having a corresponding graphic shape passes through the second The lens, the second dichroic mirror, the first dichroic mirror is focused on the front focal plane of the first objective lens.
- the surface projection exposure unit further includes a beam homogenizing component that homogenizes the parallel light that has been expanded by the second beam expander lens group.
- the surface projection exposure unit further includes an aperture for limiting the radiant area of the homogenized light.
- the surface projection exposure unit further includes a second mirror and a third mirror, wherein the light emitted through the pupil is sequentially introduced into the spatial light modulation device through the second mirror and the third mirror.
- the second light source is selected from the group consisting of a continuous laser source or a pulsed laser source having a wavelength adjustment range of 157 nm to 1064 nm, a polarization state of linear polarization, circular polarization or ellipsometry; and wherein the pulsed laser source is The frequency is from 1 Hz to 100 MHz; or a mercury lamp, a xenon lamp, a bromine tungsten lamp or an LED lamp, and the wavelength ranges from 157 nm to 1064 nm.
- the second objective lens has a magnification of 1-200 and a numerical aperture of 0.001-1.8.
- the spatial light modulation device is a spatial light modulator that optically modulates light, a spatial light modulator that optically modulates light, or a spatial light modulator that modulates light.
- the mobile station selects: a three-dimensional mobile station composed of three discrete linear motion mobile stations; a three-dimensional mobile station combined by a two-dimensional parallel mobile station and a discrete mobile station; Parallel mobile station; or a multi-dimensional mobile station combined with a mobile station having a rotating and tilting function, wherein the moving range is 0.1 ⁇ m - 1 m, the rotating angle is 0 - 360 degrees, and the tilt angle is - 90 ° - + 90 °.
- the calculation control unit includes: a data reading unit for reading a graphic to be exposed; a data processing unit for decomposing the exposure graphic; and a control unit for controlling the mobile station and the laser
- the dot scanning exposure unit and the surface projection exposure unit work together.
- the system and method of the present invention integrates a face projection maskless exposure technique with a laser point-by-point lithography technique to expose a multi-scale structure on a photosensitive material during a lithography process. That is, a structure having a large area with micron precision and a structure having nanometer precision.
- the cross-scale structure produced by the method of the present invention does not require artificial double-splicing splicing, all Model data has been broken down by computer before exposure.
- the method of the present invention enables processing of two-dimensional, three-dimensional complex structures.
- FIG. 1 is a schematic diagram of a maskless lithography system in which a cross-scale structure works in cooperation according to an embodiment of the present invention
- FIG. 2 is a schematic diagram of a maskless lithography system in which a cross-scale structure works in cooperation according to another embodiment of the present invention
- Figure 3 shows a pattern to be exposed containing both micron-level precision and nano-scale precision
- Figure 4 is a portion of the pattern having less than or equal to 1 micron accuracy after decomposing Figure 3;
- Figure 5 is a portion of the pattern of greater than 1 micron accuracy after the decomposition of Figure 3;
- Figure 6 is a scanning optical micrograph of a structure formed by exposure using a surface projection exposure method
- Figure 7 is a scanning electron micrograph of a structure formed by exposure using a laser point-by-point scanning method.
- Fig. 8 is a scanning electron micrograph of the structure in which the surface projection exposure and the laser point-by-point scanning are cooperatively exposed.
- FIG. 1 is a schematic diagram of a maskless lithography system in which a cross-scale structure works in cooperation according to an embodiment of the present invention.
- a laser point-by-point scanning exposure unit, a surface projection exposure unit, a mobile station 19, and a calculation control unit 20 are included.
- the calculation control unit 20 calls in a graphic file having a graphic to be exposed (as shown in FIG. 3) and decomposes the graphic to be exposed, so that a graphic whose accuracy is required to be below a predetermined threshold is exposed by the laser point-by-point scanning unit.
- the pattern whose accuracy requirement is greater than a predetermined threshold is exposed by the surface projection exposure unit.
- the predetermined threshold can be determined by those skilled in the art according to actual conditions. For example, in a specific example, a portion of the pattern having an accuracy of 1 ⁇ m or less is assigned to the laser point-by-point scanning unit (as in the portion of FIG. 4 after the decomposition of FIG. 3), and the calculation control unit 20 controls the mobile station 19 to press the portion of the data. mobile. A graphic portion having an accuracy of 1 ⁇ m or more is assigned to the surface projection exposure unit (as shown in Fig. 5 in which Fig. 3 is decomposed). Whether the 1 ⁇ m pattern portion is assigned to the laser point-by-point scanning unit or the surface projection exposure unit can be freely selected.
- the pattern is below a predetermined threshold, and the light emitted by the laser scanning point-by-point scanning unit moves relative to the sample, thereby realizing the laser of the sample.
- Point scan exposure In the case of a point-by-point scanning exposure, in a specific example of forming a three-dimensional pattern on a sample, the point-by-point scanning exposure unit does not move, and the moving station moves the image below a predetermined threshold in three dimensions according to the accuracy, thereby scanning exposure The light emitted by the unit cooperates with the three-dimensional movement of the mobile station to move the emitted light relative to the mobile station to implement the three-dimensional figure.
- the laser point-by-point scanning exposure unit can use a two-dimensional galvanometer, and the two-dimensional galvanometer can be used to realize the three-dimensional graphics only by moving the mobile station along one-dimensional motion. purpose.
- the laser point-by-point scanning exposure unit can use a two-dimensional galvanometer, and the two-dimensional galvanometer can be used to realize the two-dimensional graphics without moving the mobile station.
- the use of a two-dimensional galvanometer is well known to those skilled in the art and will be further illustrated later in a specific example.
- the surface projection exposure unit emits light having a corresponding pattern shape onto the sample according to the pattern whose accuracy is required to be greater than a predetermined threshold to achieve surface projection exposure of the sample.
- the laser point-by-point scanning exposure unit may include: a first light source 1, a first energy control component 2, a first shutter 3, a first beam expanding lens group 4, a first mirror 5 and a first dichroic mirror 6.
- the surface projection exposure unit may include: a second light source 7, a second energy control component 8, a second shutter 9, a second beam expanding lens group 10, a beam homogenizing component 11, a pupil 12, and a second mirror. 13.
- the light emitted by the first light source 1 is expanded by the first beam expanding lens group 4, reflected by the first mirror 5 and the first dichroic mirror 6, and then incident into the parallel beam.
- An objective lens 18 is finally focused on the surface of the sample carried by the mobile station 19.
- the first light source 1 is a continuous laser source or a pulsed laser source. More preferably, the wavelength adjustment range is from 157 nm to 1064 nm; more preferably, the polarization state of the light source is linear, circular or elliptically polarized; more preferably, the frequency of the pulsed laser source is from 1 Hz to 100 MHz.
- the first beam expanding lens group 4 can be realized by a combination of lenses, such as two convex lens combinations, or one concave lens combined with one convex lens group.
- the beam expansion factor of the first beam expanding lens group 4 may be in the range of 0.1 times to 100 times.
- the first objective lens 18 is a dry objective lens, a water immersion objective lens or an oil immersion objective lens. Still preferably, the numerical aperture is from 0.001 to 1.8 and the magnification is from 1 to 200.
- the laser point-by-point scanning exposure unit further comprises: a first shutter 3 disposed between the first light source 1 and the first beam expanding lens group 4 for adjusting the laser under the control of the calculation control unit 20
- the exposure unit exposure time is scanned point by point.
- the first shutter is a mechanical shutter or a light modulator.
- the laser point-by-point scanning exposure unit further comprises: a first energy control component 2 disposed between the first light source and the first light gate for adjusting energy or power of light emitted by the first light source 1.
- the first energy control component 2 is an absorption type optical attenuator, a polarizer, a half slide or an acousto-optic modulator.
- the laser point-by-point scanning exposure unit further comprises: a two-dimensional galvanometer disposed between the first mirror and the first dichroic mirror.
- a two-dimensional galvanometer disposed between the first mirror and the first dichroic mirror.
- the use of two-dimensional galvanometers allows the mobile station to achieve point-by-point scanning exposure only along one-dimensional motion, improving work efficiency.
- the second light source 7 passes through the second beam expanding lens group 10 in sequence, and is incident on the spatial light modulator 15. After passing through the spatial light modulator 15, the emitted light has a precision requirement greater than a predetermined threshold.
- the corresponding pattern of the pattern the beam passes through the second lens 16, the second dichroic mirror 17, and the first dichroic mirror 6 to enter the first objective lens 18, wherein the light beam passes through the lens 16, each beam Converging with the entire surface light source in the front focal plane of the objective lens, after passing through the first objective lens 18, each light beam and the entire surface light source become parallel light projected onto the surface of the sample carried by the three-dimensional mobile station; spatial light modulation is controlled by the calculation control unit
- the change of the device 15 and the movement of the mobile station 19 enable coordinated execution of the two scanning units.
- the second light source 7 is a continuous laser source or a pulsed laser source; more preferably, the wavelength adjustment range is 157 nm to 1064 nm; the polarization state may be linear polarization, circular polarization or elliptically polarized; and wherein the frequency of the pulsed laser source may The wavelength is from 1 Hz to 100 MHz; alternatively, the second light source 7 is a mercury lamp, a xenon lamp, a bromine tungsten lamp or an LED lamp; more preferably, the wavelength ranges from 157 nm to 1064 nm.
- the second beam expanding lens group 10 can be realized by a combination of lenses, such as two convex lens combinations, or one concave lens combined with one convex lens group.
- the beam expansion factor of the second beam expanding lens group 10 may be in the range of 0.1 times to 100 times.
- the spatial light modulation device 15 is a spatial light modulator that performs optical amplitude modulation on light, A spatial light modulator that performs optical phase modulation of light or a spatial light modulator that polarizes light.
- the focal length of the second lens 16 is in the range of 1 mm to 500 mm.
- the surface projection exposure unit further comprises: a second shutter 9 disposed between the second light source 7 and the second beam expander lens group 10 for adjusting the surface projection exposure under the control of the calculation control unit 20 Unit exposure time.
- the second shutter 9 is a mechanical shutter or a light modulator.
- the surface projection exposure unit further comprises: a second energy control component 8 disposed between the second light source 7 and the second shutter 9 for adjusting the energy or power of the light emitted by the second light source 7.
- the second energy control component 8 is an absorptive light attenuating sheet, a polarizing plate, a half slide or an acousto-optic modulator.
- the surface projection exposure unit further includes a beam uniformizing unit 11 that homogenizes the parallel light that has been expanded by the second beam expanding lens group 10.
- the beam homogenizing component 11 can be realized by a combination of lenses that convert the laser into flat top light, such as a Kepler type or a Galilean type lens combination; when the second light source 7 is a light source such as a mercury lamp
- the beam uniformizing unit 11 can be realized by a fly-eye lens group or the like.
- the surface projection exposure unit further includes a stop 12 for limiting the radiation area of the homogenized light.
- the surface projection exposure unit further includes a second mirror 13 and a third mirror 14, wherein the light emitted through the aperture 12 is sequentially introduced into the spatial light modulation device 15 through the second mirror 13 and the third mirror 14. .
- the calculation control unit 20 includes: a data reading unit for reading a graphic to be exposed; a data processing unit for decomposing the exposure graphic; and a control unit for controlling the mobile station and the laser point by point
- the scanning exposure unit and the surface projection exposure unit work together.
- the mobile station 19 is selected from the following: a three-dimensional mobile station composed of three discrete linear motion mobile stations; a three-dimensional mobile station combined with a two-dimensional parallel mobile station and a discrete mobile station; a mobile station; or a multi-dimensional mobile station combined with a mobile station having a rotating and tilting function, wherein the moving range is preferably from 1 nm to 10000 mm, more preferably from 0.1 ⁇ m to 1 m, a rotation angle of from 0 to 360 degrees, and an inclination angle of -90°-+ 90°.
- FIG. 2 is a schematic diagram of a maskless lithography system in which a cross-scale structure works in concert according to another embodiment of the present invention.
- the other structures in the system are the same as those of the system of Fig. 1, except that the laser point-by-point scanning and the surface projection exposure respectively use the respective objective lenses 18,21.
- the invention relates to a maskless lithography system in which a cross-scale structure works in cooperation, which is a method for realizing exposure of a cross-scale structure in one exposure process. Proceed as follows:
- the light emitted by the first light source is expanded, adjusted by a mirror and a dichroic mirror, and then focused by an objective lens on a focal plane.
- the image lens formed by the lens and the objective lens reduces the surface pattern on the focal plane of the objective lens.
- the photosensitive material is placed on the sample stage of the mobile station operated by the calculation control unit, the exposure time is controlled by the shutter, and the transmittance of the laser energy or the surface projection exposure energy is controlled by the energy control component.
- the photosensitive material under the synergistic action of the point-by-point scanning and the surface projection exposure obtained by the step 6) is subjected to washing, heating decomposition, ablation, etching, developing, and the like,
- the corresponding process conditions are selected according to the type of material; the photosensitive material that does not interact with light is partially removed to obtain a negative structure, or a portion of the photosensitive material that interacts with light is removed to obtain a positive structure.
- the photosensitive material may be an organic photosensitive material, an inorganic photosensitive material, or a photosensitive material containing metal ions.
- Embodiment 1 Two-dimensional structure of surface projection lithography exposure
- a 370 nm femtosecond titanium sapphire source is used as the surface projection exposure source with a pulse width of 100 fs, a pulse repetition frequency of 82 MHz, and a beam diameter of 2 mm.
- the laser source is expanded into a 50 mm diameter parallel beam by a beam expander lens group, and is intercepted by a beam.
- the method obtains a rectangular uniform spot with a center of 10 mm ⁇ 14 mm, and is incident on the surface of the DMD at a 24 degree angle. After the light beam is reflected by the DMD surface, it is finally projected on the photosensitive material by a convex lens with a focal length of 250 mm and a 50-fold objective lens (numerical aperture 0.8).
- (I-PL) surface The shutter exposure time is controlled by 300 ms; the projected surface projection exposure pattern is as shown in FIG. 6, and the surface projection exposure range is 179 ⁇ m ⁇ 237.9 ⁇ m.
- Embodiment 2 Two-dimensional structure of laser spot-by-point scanning exposure
- the 800nm femtosecond titanium sapphire light source is used as the laser point-by-point scanning exposure light source with a pulse width of 100fs, a pulse repetition frequency of 82MHz, and a beam diameter of 1.8mm.
- the laser light source is expanded into a parallel beam of 10mm diameter by the beam expanding lens group.
- the objective lens is focused on the surface of the photosensitive material (SCR500).
- the objective lens is an oil immersion objective lens with a numerical aperture of 1.4 and a magnification of 100 times.
- the concentric circle obtained by the point-by-point scanning method is shown in Fig. 7, and the processing resolution is 120 nm.
- Example 3 Cross-scale two-dimensional structure produced by surface projection exposure and laser point-by-point scanning synergistic exposure
- a 370 nm femtosecond titanium sapphire source is used as the surface projection exposure source with a pulse width of 100 fs, a pulse repetition frequency of 82 MHz, and a beam diameter of 2 mm.
- the laser source is expanded into a 50 mm diameter parallel beam by a beam expander lens group, and is intercepted by a beam.
- the method obtains a rectangular uniform spot with a center of 10 mm ⁇ 14 mm, and is incident on the surface of the DMD at a 24 degree angle.
- the convex lens and the objective lens with a focal length of 250 mm are projected on the surface of the photosensitive material (I-PL).
- the exposure time of the shutter is controlled by 300ms.
- the 740nm femtosecond titanium sapphire light source is used as the laser point-by-point scanning exposure light source with a pulse width of 100fs, a pulse repetition frequency of 82MHz, a beam diameter of 1.8mm, and the laser source is expanded by the beam expanding lens group.
- the beam is a parallel beam of 10 mm diameter and is focused on the surface of the photosensitive material (I-PL) by the objective lens; in this example, the surface projection exposure shares the same objective lens with the laser spot-by-point scanning exposure, the objective lens has a numerical aperture of 0.8, and the objective lens magnification is 50.
- the dry objective lens, the structure of the synergistic exposure is shown in Fig. 8, and the surface projection exposure range is 179 ⁇ m ⁇ 237.9 ⁇ m.
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Abstract
Description
Claims (26)
- 一种跨尺度结构协同工作的无掩模光刻系统,包括:激光逐点扫描曝光单元,面投影曝光单元,移动台(19)和计算控制单元(20),其中,该计算控制单元将待曝光图形进行分解,以使得精度要求在预定阈值以下的图形由该激光逐点扫描单元实现曝光,精度要求大于预定阈值的图形由面投影曝光单元实现曝光;在对该移动台上的样品进行激光逐点扫描曝光时,根据该精度要求在预定阈值以下的图形,该激光逐点扫描曝光单元出射的光相对该样品移动,从而实现对该样品的激光逐点扫描曝光;在对该样品进行面投影曝光时,该面投影曝光单元根据该精度要求大于预定阈值的图形出射具有对应图形形状的光到该样品上,以实现对该样品的面投影曝光。
- 根据权利要求1的光刻系统,其中,该激光逐点扫描曝光单元包括:第一光源(1)、第一扩束透镜组(4)、第一光传输方向调节光学组件(5、6)以及第一物镜(18),其中,该第一光源出射用于激光逐点扫描的光;该第一扩束透镜组将该第一光源出射的光扩束成平行光;该第一光传输方向调节光学组件将经该第一扩束透镜组扩束后的平行光导入该第一物镜;该第一物镜将导入的光聚焦在该样品上。
- 根据权利要求1的光刻系统,其中,该面投影曝光单元包括:第二光源(7)、第二扩束透镜组(10)、空间光调制器件(15)、第二光传输方向调节光学组件(16、17)、以及第二物镜(21),其中该第二光源出射用于面投影曝光光刻的光;该第二扩束透镜组用于将该第二光源出射的光扩束成平行光;根据该计算控制单元提供的精度要求大于预定阈值的图形,该空间光调制器件将经该第二扩束透镜组扩束的平行光调制成具有该对应图形形状的平行光并出射到该第二光传输方向调节光学组件;该第二光传输方向调节光学组件将该具有对应图形形状的平行光聚焦在 该第二物镜的前焦平面;第二物镜将平行光投影在该样品上。
- 根据权利要求1的光刻系统,其中,该激光逐点扫描曝光单元包括:第一光源(1)、第一扩束透镜组(4)、第一光传输方向调节光学组件(5、6)以及第一物镜(18),其中,该第一光源出射用于激光逐点扫描的光;该第一扩束透镜组将该第一光源出射的光扩束成平行光;该第一光传输方向调节光学组件将经该第一扩束透镜组扩束后的平行光导入该第一物镜;该第一物镜将导入的光聚焦在该样品上,并且其中,该面投影曝光单元包括:第二光源(7)、第二扩束透镜组(10)、空间光调制器件(15)、第二光传输方向调节光学组件(16、17、6)、以及该第一物镜(18),其中该第二光源出射用于面投影曝光光刻的光;该第二扩束透镜组用于将该第二光源出射的光扩束成平行光;根据该计算控制单元提供的精度要求大于预定阈值的图形,该空间光调制器件将经该第二扩束透镜组扩束的平行光调制成具有该对应图形形状的平行光并出射到该第二光传输方向调节光学组件;该第二光传输方向调节光学组件将该具有对应图形形状的平行光聚焦在该第一物镜的前焦平面;第一物镜将平行光投影在该样品上。
- 根据权利要求2或4的光刻系统,其中,该激光逐点扫描曝光单元还包括:第一光闸(3),设置在第一光源和第一扩束透镜组之间,用于在该计算控制单元的控制下调节该激光逐点扫描曝光单元曝光时间。
- 根据权利要求5的光刻系统,其中该第一光闸为第一机械快门或第一光调制器。
- 根据权利要求5的光刻系统,其中,该激光逐点扫描曝光单元还包括:第一能量控制组件(2),设置在该第一光源和该第一光闸之间,用于调 节第一光源出射的光的能量或功率。
- 根据权利要求7的光刻系统,其中,该第一能量控制组件为吸收型光衰减片、偏振片、二分之一玻片或声光调制器。
- 根据权利要求2或4的光刻系统,其中,该第一光传输方向调节光学组件包括:第一反射镜(5)和第一二向色镜(6),其中经该第一扩束透镜组扩束后的平行光依次经过第一反射镜和第一二向色镜导入该第一物镜。
- 根据权利要求9的光刻系统,其中,该激光逐点扫描曝光单元还包括:二维振镜,设置在第一反射镜和第一二向色镜之间。
- 根据权利要求2或4的光刻系统,其中,该第一光源为连续激光光源或脉冲激光光源,波长调节范围为157nm-1064nm,偏振态为线偏振、圆偏振或椭圆偏振;并且其中脉冲激光光源的频率为1Hz-100MHz。
- 根据权利要求2或4的光刻系统,其中,该第一物镜的放大倍数为1-200,数值孔径为0.001-1.8。
- 根据权利要求3或4的光刻系统,其中,该面投影曝光单元还包括:第二光闸(9),设置在第二光源和第二扩束透镜组之间,用于在该计算控制单元的控制下调节该面投影曝光单元曝光时间。
- 根据权利要求13的光刻系统,其中该第二光闸为第二机械快门或第二光调制器。
- 根据权利要求13的光刻系统,其中,该面投影曝光单元还包括:第二能量控制组件(8),设置在该第二光源和该第二光闸之间,用于调节第二光源出射的光的能量或功率。
- 根据权利要求15的光刻系统,其中,该第二能量控制组件为吸收型光衰减片、偏振片、二分之一玻片或声光调制器。
- 根据权利要求3的光刻系统,其中,该第二光传输方向调节光学组件 包括:第二透镜(16)和第二二向色镜(17),其中该具有对应图形形状的平行光依次经过第二透镜和第二二向色镜聚焦在该第二物镜的前焦平面。
- 根据权利要求4的光刻系统,其中,该第二光传输方向调节光学组件包括:第二透镜(16)、第二二向色镜(17)和该第一二向色镜,其中该具有对应图形形状的平行光依次经过第二透镜、第二二向色镜第一二向色镜聚焦在该第一物镜的前焦平面。
- 根据权利要求3或4的光刻系统,其中该面投影曝光单元还包括光束均匀化组件(11),该光束均匀化组件将经该第二扩束透镜组扩束后的平行光进行均匀化。
- 根据权利要求19的光刻系统,其中该面投影曝光单元还包括光阑(12),用于对均匀化后的光的岀射面积进行限制。
- 根据权利要求20的光刻系统,其中该面投影曝光单元还包括第二反射镜(13)和第三反射镜(14),其中经该光阑出射的光依次经过第二反射镜和第三反射镜导入该空间光调制器件。
- 根据权利要求3或4的光刻系统,其中,该第二光源从如下中选择:连续激光光源或脉冲激光光源,波长调节范围为157nm-1064nm,偏振态为线偏振、圆偏振或椭圆偏振;并且其中脉冲激光光源的频率为1Hz-100MHz;或者汞灯、氙灯、溴钨灯或者LED灯,波长范围为157nm-1064nm。
- 根据权利要求3的光刻系统,其中,该第二物镜的放大倍数为1-200,数值孔径为0.001-1.8。
- 根据权利要求3或4的光刻系统,其中,该空间光调制器件为对光进行光振幅调制的空间光调制器、对光进行光相位调制的空间光调制器或对光进行偏振调制的空间光调制器。
- 根据权利要求1-4中任一项的光刻系统,其中该移动台从如下中选择:由三个分立的直线运动移动台组合而成的三维移动台;由二维并联移动台与一个分立移动台组合的三维移动台;三维并联移动台;或具有旋转和倾斜功能的移动台组合的多维移动台,其中移动范围为0.1μm-1m,旋转角度0-360度,倾斜角度-90°-+90°。
- 根据权利要求1-4中任一项的光刻系统,其中该计算控制单元包括:数据读取部,用于读取待曝光图形;数据处理部,用于分解该曝光图形;以及控制部,用于控制该移动台、激光逐点扫描曝光单元和面投影曝光单元协同工作。
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EP3330798A4 (en) | 2019-04-24 |
JP2018527610A (ja) | 2018-09-20 |
CN106707692A (zh) | 2017-05-24 |
US20180217501A1 (en) | 2018-08-02 |
CN106707692B (zh) | 2018-03-27 |
EP3330798B1 (en) | 2020-12-30 |
US10317800B2 (en) | 2019-06-11 |
JP6450497B2 (ja) | 2019-01-09 |
EP3330798A1 (en) | 2018-06-06 |
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