WO2016015389A1 - 一种飞秒激光双光子聚合微纳加工系统及方法 - Google Patents

一种飞秒激光双光子聚合微纳加工系统及方法 Download PDF

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Publication number
WO2016015389A1
WO2016015389A1 PCT/CN2014/089190 CN2014089190W WO2016015389A1 WO 2016015389 A1 WO2016015389 A1 WO 2016015389A1 CN 2014089190 W CN2014089190 W CN 2014089190W WO 2016015389 A1 WO2016015389 A1 WO 2016015389A1
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micro
nano
femtosecond laser
layer
image capturing
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PCT/CN2014/089190
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English (en)
French (fr)
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程鑫
崔德虎
李自平
明静
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南方科技大学
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Priority to US15/500,414 priority Critical patent/US10884343B2/en
Publication of WO2016015389A1 publication Critical patent/WO2016015389A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0037—Production of three-dimensional images
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70416—2.5D lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus

Definitions

  • the invention relates to the technical field of micro-nano processing, in particular to a femtosecond laser two-photon polymerization micro-nano processing system and method.
  • a two-photon absorption technique using a femtosecond laser as a light source has been introduced into the field of micro-nano processing.
  • the technology uses a longer-wavelength femtosecond laser as a light source, and focuses the laser beam on the photosensitive material to be processed through a focusing objective lens.
  • the photosensitive material undergoes polymerization by two-photon absorption, and in other places on the optical path
  • the laser intensity is low, no two-photon absorption occurs, and because the energy of the laser is low, the corresponding single photon absorption process cannot occur, so the two-photon polymerization is limited to the focus.
  • the photosensitive material solidifies along the focal track, and the uncured photosensitive material is removed by the organic solvent, so that micro-nano processing of the photosensitive material can be achieved.
  • the use of this technology has its unique advantages in the production of arbitrarily complex three-dimensional micro-nano structures.
  • the two-photon absorption of the photosensitive material has a threshold effect, and the occurrence efficiency is proportional to the square of the light intensity; on the other hand, the incident laser only has a light intensity at a localized portion of the focus that satisfies the two-photon absorption of the material.
  • the photosensitive material is transparent to other positions of the light beam and does not absorb, so it can be placed anywhere inside the photosensitive material.
  • the femtosecond laser two-photon polymerization micro-nano processing process has strict spatial positioning ability, so that arbitrarily complex three-dimensional micro-nano structure can be fabricated.
  • the above-described multifocal parallel processing method is more suitable for mass production of micro-nano devices with periodic structures, and it is still very difficult for mass production of arbitrarily complex three-dimensional micro-nano devices.
  • the focus of each beam still needs to move point by point according to the pre-designed trajectory.
  • the relative displacement of the femtosecond laser focus and the photosensitive material is realized by controlling the movement of the stage, and the inertia of the stage is large, and the response The time is long. Therefore, the existing multi-focus parallel processing method has limited processing efficiency for fabricating arbitrarily complex three-dimensional micro-nano devices, and requires high-precision mechanical positioning capability in three-dimensional directions, which increases processing difficulty.
  • the present invention provides a femtosecond laser two-photon polymerization micro-nano processing system and method to solve the technical problems raised in the above background art.
  • the present invention provides a femtosecond laser two-photon polymerization micro-nano processing system, the system comprising:
  • a femtosecond laser for generating a femtosecond laser
  • the image capturing device is configured to image the cross-sectional pattern of the three-dimensional micro-nano device layer by layer, so that the modulated femtosecond laser forms a parallel beam arranged according to the cross-sectional pattern of the layers;
  • a focusing lens for focusing a parallel beam arranged in a cross-sectional pattern of the layers in the photosensitive material to form a planar image composed of a plurality of focal points, wherein the photosensitive material at each focus is cured to realize the three-dimensional micro-nano device One-layer projection structure of each layer structure;
  • a computer for controlling the stage and the image capturing device
  • a monitoring device for real-time monitoring of the micro-nano processing of the photosensitive material.
  • the present invention also provides a femtosecond laser two-photon polymerization micro-nano processing method, which is implemented by the femtosecond laser two-photon polymerization micro-nano processing system described in the above first aspect, which is used for photosensitive
  • the material is subjected to layer-by-layer micro-nano processing, and the layer-by-layer micro-nano processing process of the photosensitive material is monitored in real time by a monitoring device, the method comprising:
  • the first layer cross-sectional pattern of the three-dimensional micro-nano device is imaged by a computer controlled image capturing device, so that the modulated femtosecond laser forms a parallel beam arranged according to the first layer cross-sectional pattern;
  • a parallel light beam arranged according to the first layer cross-sectional pattern is focused by the focusing lens into the photosensitive material to form a planar image composed of a plurality of focal points, and the photosensitive material at each focus is solidified to realize the three-dimensional micro-nano device
  • the first layer of the cross-sectional structure is formed by one projection
  • the present invention also provides a femtosecond laser two-photon polymerization micro-nano processing method, which is implemented by the femtosecond laser two-photon polymerization micro-nano processing system described in the above first aspect, which is used for photosensitive
  • the material is subjected to multi-point parallel micro-nano processing to produce a plurality of three-dimensional micro-nano devices, and the multi-point parallel micro-nano processing process of the photosensitive material is monitored in real time by a monitoring device, the method comprising:
  • the plurality of parallel femtosecond lasers are focused into the photosensitive material by a focusing lens to form a plurality of focal points and the photosensitive material is cured at each focus to obtain a structure of each three-dimensional micro-nano device at the first point ;
  • the multi-point parallel micro-nano processing of the photosensitive material is performed by a computer controlled displacement stage moving according to a preset trajectory until all three-dimensional micro-nano devices are processed.
  • the femtosecond laser two-photon polymerization micro-nano processing system and method provided by the invention provide an image capturing device by performing a micro-nano processing optical path in a femtosecond laser, and can not only divide a femtosecond laser into multiple bundles of parallel femtoseconds.
  • the laser can realize the simultaneous processing of a plurality of three-dimensional micro-nano devices, and can also project one-time cross-section pattern of each layer of the device to be fabricated, and the cross-section pattern of each layer can be different, so that an arbitrarily complex three-dimensional micro-nano device can be processed.
  • the stage In order to greatly improve the processing efficiency and process flow; in addition, in the process of layer-by-layer micro-nano processing, the stage only needs to move along the thickness direction of the micro-nano device, without moving point by point in the two-dimensional direction of the plane. In this way, not only can the time required for forming each layer of the three-dimensional micro-nano device be significantly reduced, the processing efficiency and the process flow rate can be improved, and the positioning accuracy requirement in the two-dimensional direction of the plane can be reduced, the processing process is simplified, and the difficulty is reduced.
  • FIG. 1 is a schematic structural view of a femtosecond laser two-photon polymerization micro-nano processing system according to Embodiment 1 of the present invention
  • FIG. 2a is a schematic structural view of a femtosecond laser two-photon polymerization micro-nano processing system according to Embodiment 2 of the present invention
  • FIG. 2b is a schematic structural diagram of another femtosecond laser two-photon polymerization micro-nano processing system according to Embodiment 2 of the present invention.
  • FIG. 3a is a dynamic imaging method for simultaneously processing four micro-nano devices according to Embodiment 2 of the present invention. a schematic view of a partial structure of the device;
  • 3b is a partial structural diagram of a dynamic image capturing device for processing an L-shaped device according to Embodiment 2 of the present invention
  • 3c is a schematic structural view of a layer cross section of an L-type device formed on a photosensitive material according to Embodiment 2 of the present invention.
  • FIG. 4 is a schematic structural diagram of a femtosecond laser two-photon polymerization micro-nano processing system according to Embodiment 3 of the present invention.
  • FIG. 5 is a schematic flow chart of a femtosecond laser two-photon polymerization micro-nano processing method according to Embodiment 4 of the present invention.
  • FIG. 6 is a schematic flow chart of a femtosecond laser two-photon polymerization micro-nano processing method according to Embodiment 5 of the present invention.
  • Embodiment 1 of the present invention provides a femtosecond laser two-photon polymerization micro-nano processing system.
  • FIG. 1 is a schematic structural diagram of a femtosecond laser two-photon polymerization micro-nano processing system according to Embodiment 1 of the present invention. As shown in FIG.
  • the femtosecond laser two-photon polymerization micro-nano processing system includes: a femtosecond laser 11 for generating a femtosecond laser; and an external optical path modulating unit 12 for modulating the femtosecond laser;
  • the image device 13 is configured to image the cross-sectional pattern of the three-dimensional micro-nano device layer by layer, so that the modulated femtosecond laser forms a parallel beam arranged according to the cross-sectional pattern of the layers;
  • the focusing lens 14 is used to The parallel beams arranged in the cross-sectional pattern of each layer are respectively focused in the photosensitive material 15, forming a planar pattern composed of a plurality of focal points, and the photosensitive material is solidified at the focus to realize one-time projection forming of each cross-sectional structure of the three-dimensional micro-nano device.
  • a stage 16 for finely adjusting the position of the photosensitive material 15 placed thereon a computer 17 for controlling the stage 16 and the image
  • the slide 19 can be fixed on the stage 16 for placing the photosensitive material 15.
  • the monitoring device 18 may employ a CCD (Charged Coupled Device) image sensor as a core component.
  • a scanning array mirror may be disposed between the image capturing device 13 and the focus lens 14. Since the response speed of the scanning array mirror is faster, the processing speed can be further improved.
  • the above-mentioned image capturing device 13 can form a cross-sectional pattern of each layer of the three-dimensional micro-nano device thereon by the control of the computer 17, and form a bundle of femtosecond lasers into a plurality of bundles arranged according to the cross-sectional pattern of each layer.
  • Parallel femtosecond lasers are used to perform layer-by-layer micro-nano processing of the photosensitive material.
  • the stage 16 only needs to move along the thickness direction of the micro-nano device. More generally, the cross-sectional pattern of each layer of the three-dimensional micro-nano device may not be formed on the image capturing device 13.
  • the image capturing device 13 may divide only one beam of femtosecond laser into multiple parallel femtosecond lasers.
  • Multi-point parallel micro-nano processing of the photosensitive material can be realized to simultaneously produce a plurality of micro-nano devices, and correspondingly, the stage 16 needs to move according to a preset trajectory.
  • the preset trajectory is related to the distribution of each processing point of the three-dimensional micro-nano device to be fabricated.
  • the external light path modulating unit 12 includes, but is not limited to, a regenerative amplifier 121, a shutter 122, an attenuator 123, a collimating lens group 124, and a plurality of sequentially arranged on a forward path of the femtosecond laser. Aperture stop 125.
  • the femtosecond laser generated by the femtosecond laser 11 is an ultrashort pulse laser, and the femtosecond laser is modulated by the external optical path modulating unit 12 to perform micro-nano processing on the photosensitive material 15.
  • the present invention is a multi-focus parallel layer-by-layer process.
  • the energy required of the femtosecond laser is large, so the regenerative amplifier 121 is required to amplify the energy of the femtosecond laser; the energy-amplified beam passes through the shutter 122. Its on-off state is controlled, and then its energy is adjusted by the attenuator 123. By controlling the beam energy by the attenuator 123, the center intensity at each beam focus can be adjusted to achieve control of the processing resolution.
  • the collimator lens assembly 124 is then passed through, wherein the collimating lens assembly 124 includes a short focal length lens 124a and a long focal length lens 124b.
  • the intensity of the edge portion of the laser beam is weaker than the center.
  • the pair of collimating lens groups 124 The beam is collimated and expanded to provide a relatively uniform light intensity distribution in the central region of the laser beam.
  • the aperture stop 125 is used to filter out the edge portion of the beam, and the femtosecond excitation with a uniform uniformity of the cross-sectional intensity distribution is obtained. Light beam.
  • the femtosecond laser two-photon polymerization micro-nano processing system can not only divide a femtosecond laser into multiple parallel femtoseconds by providing an image capturing device in the optical path of the femtosecond laser for micro-nano processing.
  • the laser can realize the simultaneous processing of a plurality of three-dimensional micro-nano devices, and can also project one-time cross-section pattern of each layer of the device to be fabricated, and the cross-section pattern of each layer can be different, so that an arbitrarily complex three-dimensional micro-nano device can be processed.
  • the stage In order to greatly improve the processing efficiency and process flow; in addition, in the process of layer-by-layer micro-nano processing, the stage only needs to move along the thickness direction of the micro-nano device, without moving point by point in the two-dimensional direction of the plane. In this way, not only can the time required for forming each layer of the three-dimensional micro-nano device be significantly reduced, the processing efficiency and the process flow rate can be improved, and the positioning accuracy requirement in the two-dimensional direction of the plane can be reduced, the processing process is simplified, and the difficulty is reduced.
  • the femtosecond laser two-photon polymerization micro-nano processing system can have various specific implementation manners, for example, the image capturing device can be a dynamic image capturing device or a static image capturing device, and for different types of image capturing devices, You can also choose different devices to achieve.
  • the image capturing device can not only divide a femtosecond laser into multiple parallel femtosecond lasers, but also can be used for each layer of the three-dimensional micro-nano device to be fabricated.
  • the cross-sectional pattern may be formed by one projection, and the preferred embodiment will be described in detail below.
  • Embodiment 2 of the present invention further provides a femtosecond laser two-photon polymerization micro-nano processing system.
  • the image capturing device of the embodiment adopts a dynamic image capturing device.
  • the computer 17 is configured to control the image capturing device, and the computer is configured to model the structure of the three-dimensional micro-nano device and convert the modeled model into The digital voltage signal is applied to the dynamic imaging device to form cross-sectional patterns of the layers of the three-dimensional micro-nano device on the dynamic imaging device.
  • the computer 17 can perform a computer-aided design through a software control unit therein, and establish a three-dimensional model for the three-dimensional micro-nano device to be processed, which will be built into three
  • the dimensional model is divided into multi-layer cross-section graphics, and then each cross-section pattern is decomposed point by point, and a cross-sectional graph of the corresponding layer composed of multiple points is obtained.
  • each layer cross-section pattern of the three-dimensional micro-nano device designed by the computer 17 is converted into a digital voltage signal, loaded onto the dynamic image capturing device, and each layer cross-sectional pattern of the three-dimensional micro-nano device is formed on the dynamic image capturing device.
  • the auxiliary design software in the above software control unit may be an existing commercial software, for example, CAD (Computer Aided Design), wherein the CAD file may be in a standard STL file format.
  • the dynamic image capturing device includes a plurality of pixel units, wherein the pixel unit in an open state under computer control forms a cross-sectional pattern of each layer of the three-dimensional micro-nano device on the dynamic image capturing device.
  • each pixel unit of the dynamic image capturing device is separately opened and closed under computer control, and when the femtosecond laser is irradiated on the dynamic image capturing device, the pixel unit in the open state reflects or transmits the femtosecond laser.
  • a bunch of femtosecond lasers are divided into a plurality of femtosecond lasers arranged in a specific shape for micro-nano processing.
  • the first layer cross-sectional pattern of the three-dimensional micro-nano device model designed by the software control unit of the computer is converted into a digital voltage signal, and then the digital voltage signal is loaded on the dynamic image capturing device, and each signal controls one pixel unit.
  • the femtosecond laser is irradiated on the dynamic image capturing device, the opening and closing of each pixel unit is controlled by the digital voltage signal, and a plurality of transmitted or reflected light beams arranged according to the first sectional pattern may be formed and processed to form a device.
  • a cross-sectional structure converting the second layer cross-sectional pattern of the device model into a digital voltage signal and loading it onto the dynamic image capturing device to form a plurality of transmitted or reflected light beams arranged according to the second cross-sectional pattern and processing
  • the second layer cross-sectional structure of the device is formed in sequence, and finally a complete three-dimensional micro-nano device can be obtained by layer-by-layer polymerization.
  • the dynamic image capturing device may be a liquid crystal display (LCD) or a digital light processing device (DLP), wherein the liquid crystal display and the digital light processing device belong to spatial light modulation.
  • LCD liquid crystal display
  • DLP digital light processing device
  • SLM Spatial Light Modulator
  • FIG. 2a is a junction of a femtosecond laser two-photon polymerization micro-nano processing system according to Embodiment 2 of the present invention.
  • a liquid crystal display 131 is employed as the dynamic image capturing device, and in order to make the structure of the entire micro/nano processing system more compact, a path is provided on the forward path of the femtosecond laser and between the aperture stop 125 and the liquid crystal display 131.
  • Total reflection mirror 21 is included in each pixel unit of the liquid crystal display 131 is composed of a box containing a liquid crystal material, and each of the pixel units can be individually opened and closed under the control of the computer 17.
  • the pixel unit turned on on the liquid crystal display 131 can transmit the femtosecond laser, and the closed pixel unit does not transmit the light beam.
  • a plurality of controllable transmitted light beams can be formed, and after focusing, a planar pattern composed of a plurality of focal points is formed inside the photosensitive material, and the photosensitive material at the focus occurs two-photon. Polymerization forms a layered structure having a specific shape.
  • FIG. 2b is a schematic structural view of another femtosecond laser two-photon polymerization micro-nano processing system according to Embodiment 2 of the present invention.
  • a digital light processing device 132 is employed as the dynamic imaging device.
  • the core component of the digital light processing device 132 is a digital micromirror device
  • the digital micromirror device is composed of thousands of tiny tiltable lenses
  • one lens is a pixel unit
  • each lens can be oriented to ⁇ 12 ° Two angles are tilted to reflect incident light from both directions.
  • Each pixel unit can be individually opened and closed under the control of the computer 17.
  • the lens in the "on” state reflects the incident light into the processing optical path to participate in the processing process, at "
  • the lens in the "off” state reflects the incident light out of the processing light path and is absorbed by the light absorber.
  • FIG. 3a is a partial structural diagram of a dynamic image capturing device for simultaneously processing four micro-nano devices according to Embodiment 2 of the present invention.
  • a dynamic image capturing device which may be a liquid crystal display panel or a digital micromirror device
  • each square region is a pixel unit 22, and each pixel unit 22 can be controlled to be individually opened and closed by a computer 17.
  • the dynamic image capturing device can be controlled according to processing requirements.
  • the shaded pixel unit 221 indicates that the pixel unit is in a closed state
  • the unshaded pixel unit 222 indicates that the pixel unit is in an on state.
  • the femtosecond laser is first modulated by the external optical path modulating unit 12,
  • the pixel unit 222 in the on state can transmit or reflect the femtosecond laser to form four parallel beams, and each of the femtosecond lasers is transmitted by the four pixel units 222 in the on state or
  • the reflected beam consists of. After focusing by the focusing lens 14, four spots are formed inside the photosensitive material 15, and the photosensitive material undergoes two-photon polymerization at the spot.
  • a scanning array mirror may also be disposed between the dynamic image capturing device and the focus lens 14, and the femtosecond laser is projected into the photosensitive material 15 by the scanning array mirror. Since the response speed of the scanning array mirror is faster, the processing speed can be further improved.
  • a bundle of femtosecond lasers may be transmitted or reflected by a plurality of pixel units 222 in an on state, wherein the plurality of pixel units 222 in an on state may have a square shape or a rectangular shape.
  • the number, intensity, shape, spacing and distribution of parallel beams can be controlled by selecting dynamic image capturing devices with different resolutions and flexibly controlling the opening and closing state of each pixel unit therein. The situation, thus controlling the number of devices processed in parallel, the minimum processing size, spacing and distribution, not only greatly increases the processing speed, but also has strong process flexibility.
  • the liquid crystal display device or the digital light processing device as the dynamic image capturing device can reach millions of pixel units, so that thousands of light spots can be easily realized, achieving ultra-large-scale parallel exposure, and processing thousands of micros at the same time. Nano device.
  • FIG. 3b is a partial structural diagram of a dynamic image capturing apparatus for processing an L-shaped device according to Embodiment 2 of the present invention.
  • each square area is a pixel unit 22, and each pixel unit 22 can be controlled to be individually opened and closed by a computer 17.
  • the spatial modulator as the dynamic image capturing device can be controlled according to the processing requirements.
  • the shaded pixel unit 221 indicates that the pixel unit is in the off state
  • the unshaded pixel unit 222 indicates that the pixel unit is in the on state.
  • the pixel unit 222 in the on state constitutes a pattern of the L-shaped device.
  • the femtosecond laser is first modulated by the external optical path modulating unit 12, and when irradiated on the dynamic image capturing device, only the pixel unit 222 in the on state can pass or reflect.
  • Second laser After focusing by the focusing lens 14, an L-shaped planar pattern composed of a plurality of spots is formed inside the photosensitive material 15, and the photosensitive material 15 at the spot is subjected to two-photon polymerization, and the polymerization point constitutes a layered structure of the device, as shown in FIG. 3c.
  • a cross-sectional pattern 23 of the L-type device is shown in FIG. 3c.
  • each pixel unit 22 in the dynamic image capturing device is controlled by the computer 17, and the exposure time can be flexibly controlled to improve the processing accuracy.
  • the computer 17 to control the displacement of the stage 16 in a direction parallel to the direction in which the femtosecond laser illuminates the photosensitive material 15 (longitudinal in FIGS. 2a and 2b), each time a layer thickness is moved, by layer by layer Processing can ultimately result in a complete micro-nano device, and the entire process can be monitored in real time by the monitoring device 18.
  • the traditional two-photon polymerization micro-nano processing adopts a single-beam point-by-point processing method, and the time required for processing one layer of the same L-shaped device is the sum of the processing time of each point, and the layer-by-layer processing method of the present invention is used.
  • Each point of the cross-section component can be machined at the same time, and the time required to process each layer section is equivalent to the time required to process one point in the conventional manner, and the processing speed is remarkably improved.
  • the processing time of each layer section is related to the response time of the dynamic image capturing device and the exposure time of the photosensitive material.
  • the switching speed of each pixel unit is very fast, so the exposure time can be precisely controlled, which helps to improve the processing resolution.
  • each layer of cross-section graphics can be any complex graphics, so that through the layer-by-layer processing, any complex three-dimensional micro-nano structure can be processed quickly and flexibly.
  • the light beam transmitted or reflected by the pixel unit 222 in the above-mentioned open state is the minimum light beam, and the size of the pixel unit determines the size of the minimum processing size. Therefore, after the beam is focused, the smallest writing unit actually in the photosensitive material 15 is the size of the pixel unit divided by the reduction factor, wherein the reduction factor depends on the selected focus lens.
  • the dynamic image capturing device can be selected from existing liquid crystal display devices or digital light processing devices on the market, and can also be customized according to the minimum size required for processing.
  • Embodiment 3 of the present invention further provides a femtosecond laser two-photon polymerization micro-nano processing system.
  • the image capturing apparatus of this embodiment employs a static image capturing apparatus.
  • the static image capturing device may employ a mask.
  • 4 is a schematic structural view of a femtosecond laser two-photon polymerization micro-nano processing system according to Embodiment 3 of the present invention. As shown in FIG. 4, the static image taking device employs a mask 133, and in order to make the structure of the entire micro/nano processing system more compact, on the advance path of the femtosecond laser and in the aperture stop 125 and the mask plate 133 image taking device 13 A total reflection mirror 21 is provided between them.
  • the mask 133 includes a plurality of micro-regions, each of which includes a layered cross-sectional pattern of the three-dimensional micro-nano device. It should be noted that the size of each micro-region may be a multiple of the actual size of the cross-section of each layer of the micro device, and the specific multiple depends on the focusing magnification of the focusing lens used.
  • the computer 17 is further configured to control the image capturing device, and the computer 17 is configured to perform micro-motion on the position of the mask plate 133 during micro-nano processing. Adjusting to achieve image taking of the cross-sectional patterns of the layers of the three-dimensional micro-nano device.
  • the cross-sectional pattern of the three-dimensional micro-nano device formed on the mask 133 is different from that of the dynamic image capturing device.
  • the mask plate 133 may be formed according to each cross-sectional pattern of the three-dimensional micro-nano device designed by the computer 17.
  • the mask plate 133 may be a glass plate having a high transmittance to a femtosecond laser light source, and a cross-sectional pattern of each layer of the device is formed on the surface of the glass plate.
  • a micro-nano processing technique such as evaporation or sputtering, photolithography, wet etching, etc.
  • a micro-nano processing technique such as evaporation or sputtering, photolithography, wet etching, etc.
  • the area is transparent to the femtosecond laser.
  • Each of the light-transmitting regions corresponds to each point on the cross-sectional pattern of each layer of the device, and the area is several times of the corresponding point, and the specific magnification is determined according to the focusing magnification of the focusing lens.
  • alignment marks are formed in each micro-region of the glass surface for positioning each micro-region.
  • the femtosecond laser is first modulated by the external light path modulating unit 12, and then irradiated onto the mask plate 133 as a static image capturing device. Since the mask 133 is connected to the computer 17, the mask 133 is adjusted by the computer 17, so that the femtosecond laser is aligned on the area of the mask 133 corresponding to the cross-sectional pattern of the first layer of the device, and the light beam is transmitted through the light-transmitting area at the mask 133.
  • the other side space forms a plurality of beams, and after focusing by the focusing lens 14, a planar pattern composed of a plurality of focal points is formed inside the photosensitive material 15, and the photosensitive material 15 at the focus is subjected to two-photon polymerization, curing occurs, and multiple curing occurs.
  • the dots constitute the first layer cross-sectional structure of the device. Then, the distance of one layer of thickness of the stage 16 in the longitudinal direction (in FIG.
  • the position of the mask 133 is adjusted by the computer 17, so that the femtosecond laser is aligned with the micro-region corresponding to the second-layer cross-sectional pattern of the device on the mask 133, and the second layer cross-sectional structure of the device is processed.
  • a complete three-dimensional micro-nano device can be obtained by layer-by-layer polymerization, and the entire process can be observed in real time by the monitoring device 18.
  • the above is a layer-by-layer micro-nano processing using the mask 133.
  • the mask plate 133 can also be used for multi-point parallel micro-nano processing while processing a plurality of three-dimensional micro-nano devices.
  • each of the micro-regions of the masking plate 133 is provided with a plurality of light-transmitting regions, each of which corresponds to each of the three-dimensional micro-nano devices to be fabricated.
  • the femtosecond laser is first modulated by the external light path modulating unit 12, irradiated on the mask plate 133, and formed into a plurality of parallel beams by transmission, each of which is transparent in each micro-region.
  • the light beam is transmitted by the light region. After focusing by the focusing lens 14, a plurality of spots are formed inside the photosensitive material 15, and the photosensitive material at the spot undergoes two-photon polymerization.
  • a plurality of micro-nano devices can be processed in parallel at the same time, and the entire processing process can be monitored in real time by the monitoring device 18.
  • the image forming of each layer of the device is performed by using a mask as a static image capturing device, so that the processing efficiency is remarkably improved; at the same time, the mask manufacturing process is mature, and each transparent region in the micro region is obtained.
  • Zero spacing can be achieved, so that the use of a mask for image processing can be processed to obtain a smooth three-dimensional micro-nano device structure.
  • Embodiment 4 of the present invention provides a femtosecond laser two-photon polymerization micro-nano processing method.
  • the femtosecond laser two-photon polymerization micro-nano processing method of the present embodiment is performed by the femtosecond laser two-photon polymerization micro-nano processing system described in the above embodiments.
  • FIG. 5 is a schematic flow chart of a femtosecond laser two-photon polymerization micro-nano processing method according to Embodiment 4 of the present invention. As shown in FIG. 5, the femtosecond laser two-photon polymerization micro-nano processing method comprises:
  • Step 301 Turn on a femtosecond laser to generate a femtosecond laser.
  • Step 302 Modulate the femtosecond laser by an external optical path modulating unit.
  • the femtosecond laser is modulated by the external light path modulating unit, including: a regenerative amplifier, a shutter, an attenuator, and a collimator arranged in the outer optical path modulating unit and sequentially arranged on the forward path of the femtosecond laser
  • the lens group and the aperture stop modulate the femtosecond laser.
  • Step 303 The first layer cross-sectional pattern of the three-dimensional micro-nano device is imaged by a computer controlled image capturing device, so that the modulated femtosecond laser forms a parallel beam arranged according to the cross-sectional pattern of the layers.
  • Step 304 Focusing a parallel light beam arranged according to the first layer cross-sectional pattern into the photosensitive material through a focusing lens to form a planar pattern composed of a plurality of focal points, where the photosensitive material is solidified to achieve the three-dimensional
  • the first layer cross-sectional structure of the micro-nano device is formed by one projection.
  • Step 305 The distance of a section thickness of the three-dimensional micro-nano device is moved by a computer controlled displacement stage, wherein a moving direction of the displacement stage is parallel to a direction in which the femtosecond laser irradiates the photosensitive material.
  • Step 306 Control the image capturing device to perform image capturing on the remaining layers of the three-dimensional micro-nano device layer by layer. After each layer structure is processed and formed, the computer is controlled to move the three-dimensional micro through the stage. The distance of one layer thickness of the nano device is completed until the entire three-dimensional micro-nano device is processed.
  • the computer-controlled image capturing device images the cross-sectional patterns of the three-dimensional micro-nano devices, including: when the image capturing device adopts the dynamic image capturing device, the structure of the three-dimensional micro-nano device is performed by a computer.
  • Modeling converting the modeled model into a digital voltage signal, loading the dynamic image capturing device, and controlling the opening and closing state of the pixel unit in the dynamic image capturing device to implement each of the three-dimensional micro-nano devices Taking image of the layer cross-sectional pattern; or when the image capturing device adopts a static image capturing device including the cross-sectional patterns of the layers of the three-dimensional micro-nano device, the static image capturing device is processed by the computer during micro-nano processing The position is jogged to achieve image taking of the cross-sectional patterns of the layers of the three-dimensional micro-nano device.
  • the femtosecond laser two-photon polymerization micro-nano processing method provided in the fourth embodiment of the present invention, by setting the image capturing device in the optical path of the micro-nano processing of the femtosecond laser, one-time projection forming of each cross-section pattern of the device to be fabricated can be performed.
  • each layer can be different, so that it can be processed to produce arbitrarily complex three-dimensional Micro-nano devices, which greatly improve processing efficiency and process flow; in addition, in the process of layer-by-layer micro-nano processing, the stage only needs to move along the section thickness direction of the micro-nano device, without the need to The point movement can not only significantly reduce the time required for forming each layer of the three-dimensional micro-nano device, thereby improving the processing efficiency and the process flow, and also reducing the positioning accuracy requirement in the two-dimensional direction of the plane, thereby making the processing process Simplified and less difficult.
  • Embodiment 5 of the present invention provides a femtosecond laser two-photon polymerization micro-nano processing method.
  • the femtosecond laser two-photon polymerization micro-nano processing method of the embodiment is performed by the femtosecond laser two-photon polymerization micro-nano processing system described in the first embodiment, the second embodiment and the third embodiment, and the concept in the embodiment is
  • the description of the description and the related principles refer to the first embodiment, the second embodiment, and the third embodiment, and details are not described herein again.
  • the femtosecond laser two-photon polymerization micro-nano processing method described in this embodiment is used for multi-point parallel micro-nano processing of photosensitive materials to produce a plurality of three-dimensional micro-nano devices, and multiple points of the photosensitive materials by monitoring devices Parallel micro-nano processing is monitored in real time.
  • the fifth embodiment uses the image capturing device to perform layer-by-layer micro-nano processing on the photosensitive material.
  • the image capturing device is used to perform multi-point parallel processing on the photosensitive material. Micro-nano processing. FIG.
  • FIG. 6 is a schematic flow chart of a femtosecond laser two-photon polymerization micro-nano processing method according to Embodiment 5 of the present invention. As shown in FIG. 6, the femtosecond laser two-photon polymerization micro-nano processing method comprises:
  • Step 401 Turn on a femtosecond laser to generate a femtosecond laser.
  • Step 402 Modulate the femtosecond laser by an external optical path modulating unit.
  • Step 403 Control the image capturing device to divide the modulated one-shot femtosecond laser into a plurality of parallel femtosecond lasers.
  • Step 404 Focusing the plurality of parallel femtosecond lasers in the photosensitive material through a focusing lens to form a plurality of focal points and curing the photosensitive materials at each focus to obtain a first point of each three-dimensional micro-nano device The structure of the place.
  • Step 405 The multi-point parallel micro-nano processing is performed on the photosensitive material by a computer controlled displacement stage according to a preset trajectory until all three-dimensional micro-nano devices are processed.
  • the image taking device is a dynamic image capturing device.
  • a dynamic image capture device Micro-nano processing not only greatly increases the processing speed, but also has strong process flexibility.
  • the switching speed of each pixel unit in the dynamic image capturing device is very fast, only a few microseconds, it helps to further increase the processing speed and flexibly control the exposure time, thereby improving the processing resolution.
  • the femtosecond laser two-photon polymerization micro-nano processing method provided in the fifth embodiment of the present invention can divide a femtosecond laser into a plurality of parallel femtosecond lasers by providing an image capturing device in the optical path of the femtosecond laser micro-nano processing. It can process multiple 3D micro-nano devices at the same time, which can greatly improve processing efficiency and process flow.

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Abstract

一种飞秒激光双光子聚合微纳加工系统及方法，所述系统包括：飞秒激光器（11）、外光路调制单元（12）、取像装置（13）、聚焦透镜（14）、位移台（16）、计算机（17）以及监控装置（18），其中，取像装置（13），用于对三维微纳器件的截面图形逐层进行取像，以使调制后的飞秒激光形成按照所述各层截面图形排列的并行光束。本技术方案不仅可以同时加工多个三维微纳器件，还可以对任意复杂的三维微纳器件进行逐层加工，从而提高加工效率和工艺流量；此外，在进行逐层微纳加工的过程中，位移台（16）只需沿微纳器件的截面厚度方向运动，这样不仅可以提高加工效率和工艺流量，还可以降低其在平面二维方向的定位精度要求，从而使加工工艺简化，难度降低。

Description

一种飞秒激光双光子聚合微纳加工系统及方法
本专利申请要求于2014年8月1日提交的、申请号为201410375257.5、申请人为南方科技大学、发明名称为“一种飞秒激光双光子聚合微纳加工系统及方法”的中国专利申请的优先权，该申请的全文以引用的方式并入本申请中。
技术领域
本发明涉及微纳加工技术领域，尤其涉及一种飞秒激光双光子聚合微纳加工系统及方法。
背景技术
随着半导体微电子技术的发展，伴随产生的各种微纳加工技术成为了现代科学技术的重要研究内容，在微机电系统、微光子学器件、精密特殊仪器、信息技术、生物医学等领域有着广泛的应用。
近年来，随着激光技术的发展，利用飞秒激光作为光源的双光子吸收技术被引入微纳加工领域。该技术是利用较长波长的飞秒激光作为光源，通过聚焦物镜将激光光束聚焦在待加工的光敏材料上，在焦点处光敏材料通过双光子吸收作用发生聚合反应，而在光路上其他地方由于激光强度较低，不发生双光子吸收，同时由于激光的能量较低，相应的单光子吸收过程也不能发生，因此双光子聚合作用只局限在焦点处。当激光焦点在光敏材料内部移动时，光敏材料沿焦点轨迹发生固化，未固化的光敏材料被有机溶剂除去，从而可以实现对光敏材料的微纳加工。
根据上述飞秒激光双光子聚合微纳加工的原理，利用该项技术在制作任意复杂的三维微纳结构方面具有其特有的优势。这是由于一方面，光敏材料发生双光子吸收具有阀值效应，发生效率与光强度的平方成正比；另一方面，入射激光只有在焦点处局部区域的光强满足材料发生双光子吸收的阀值，光敏材料相对于光束其他位置透明，不发生吸收，因此可以在光敏材料内部任意位置实 现定点聚合，使飞秒激光双光子聚合微纳加工过程具有严格的空间定位能力，从而可以制作任意复杂的三维微纳结构。
早期采用飞秒激光双光子聚合进行微纳加工是通过在光敏材料内部逐点发生双光子聚合来形成三维微纳结构，因此，加工一个三维微纳器件需要大量的点聚合过程，时间较长，加工效率低，且工艺流量远远不能满足工业生产需求，从而限制其在微纳加工领域的进一步应用。为解决上述问题，各国研究人员提出多焦点并行加工的方法，实现了同时并行加工上百个微纳结构，使加工效率得到一定程度的提高。同时，国内研究人员也在多焦点并行加工技术方面做了很多研究，例如提出了通过多光束组合与控制将零部件加工制备与组装一次完成的方法，解决了微尺度组装难题。
然而，上述的多焦点并行加工方法比较适用于批量生产具有周期结构的微纳器件，而对于批量生产任意复杂的三维微纳器件仍然有很高难度。在加工过程中每束光的焦点仍需按照预先设计的轨迹逐点运动，通常飞秒激光焦点与光敏材料的相对位移是通过控制位移台的运动来实现的，而位移台惯性较大，响应时间较长，因此，现有的多焦点并行加工的方法对制作任意复杂的三维微纳器件的加工效率提高有限，且在三维方向上均需要高精度的机械定位能力，增加了加工难度。
发明内容
有鉴于此，本发明提供一种飞秒激光双光子聚合微纳加工系统及方法，以解决以上背景技术部分提出的技术问题。
第一方面，本发明提供了一种飞秒激光双光子聚合微纳加工系统，所述系统包括：
飞秒激光器，用于产生飞秒激光；
外光路调制单元，用于对所述飞秒激光进行调制；
取像装置，用于对三维微纳器件的截面图形逐层进行取像，以使调制后的飞秒激光形成按照所述各层截面图形排列的并行光束；
聚焦透镜，用于将按照所述各层截面图形排列的并行光束聚焦在光敏材料内，形成由多个焦点组成的平面图像，各焦点处光敏材料发生固化，以实现所述三维微纳器件的每层截面结构一次投影成形；
位移台，用于对放置在其上的所述光敏材料的位置进行微动调节；
计算机，用于对所述位移台和所述取像装置进行控制；
监控装置，用于对所述光敏材料的微纳加工过程进行实时监控。
第二方面，本发明还提供了一种飞秒激光双光子聚合微纳加工方法，采用上述第一方面所述的飞秒激光双光子聚合微纳加工系统来执行，所述方法用于对光敏材料进行逐层微纳加工，并通过监控装置对所述光敏材料的逐层微纳加工过程进行实时监控，所述方法包括：
打开飞秒激光器，产生飞秒激光；
通过外光路调制单元对所述飞秒激光进行调制；
通过计算机控制取像装置对三维微纳器件的第一层截面图形进行取像，以使调制后的飞秒激光形成按照所述第一层截面图形排列的并行光束；
通过聚焦透镜将按照所述第一层截面图形排列的并行光束聚焦在所述光敏材料内，形成由多个焦点组成的平面图像，各焦点处光敏材料发生固化，以实现所述三维微纳器件的第一层截面结构一次投影成形；
通过计算机控制位移台移动所述三维微纳器件的一层截面厚度的距离，其中，所述位移台的移动方向与所述飞秒激光照射所述光敏材料的方向平行；
通过计算机控制所述取像装置对所述三维微纳器件的剩余各层截面图形逐层进行取像，每层截面结构加工成形后，利用计算机控制所述位移台移动所述三维微纳器件的一层截面厚度的距离，直至整个三维微纳器件加工完成。
第三方面，本发明还提供了一种飞秒激光双光子聚合微纳加工方法，采用上述第一方面所述的飞秒激光双光子聚合微纳加工系统来执行，所述方法用于对光敏材料进行多点并行微纳加工以制得多个三维微纳器件，并通过监控装置对所述光敏材料的多点并行微纳加工过程进行实时监控，所述方法包括：
打开飞秒激光器，产生飞秒激光；
通过外光路调制单元对所述飞秒激光进行调制；
通过计算机控制取像装置使调制后的一束飞秒激光变成多束并行的飞秒激光；
通过聚焦透镜将所述多束并行的飞秒激光聚焦在所述光敏材料内，形成多个焦点且在各焦点处光敏材料发生固化，以得到每个三维微纳器件在第一点处的结构；
通过计算机控制位移台按照预设轨迹移动，对所述光敏材料进行多点并行微纳加工，直至所有三维微纳器件加工完成。
本发明提供的飞秒激光双光子聚合微纳加工系统及方法，通过在飞秒激光进行微纳加工的光路中，设置取像装置，不仅可以将一束飞秒激光分成多束并行的飞秒激光，以实现同时加工多个三维微纳器件，还可以对所要制得的器件的每层截面图形一次投影成形，且每层截面图形可以不同，这样可以加工制得任意复杂的三维微纳器件，从而大大提高加工效率和工艺流量；此外，在进行逐层微纳加工的过程中，位移台只需沿微纳器件的截面厚度方向运动，而不需要在平面二维方向上逐点移动，这样不仅可以使三维微纳器件的每层截面加工成形所需要的时间显著减少，提高加工效率和工艺流量，还可以降低其在平面二维方向的定位精度要求，使加工工艺简化，难度降低。
附图说明
通过阅读参照以下附图所作的对非限制性实施例所作的详细描述，本发明的其它特征、目的和优点将会变得更明显：
图1是本发明实施例一提供的一种飞秒激光双光子聚合微纳加工系统的结构示意图；
图2a是本发明实施例二提供的一种飞秒激光双光子聚合微纳加工系统的结构示意图；
图2b是本发明实施例二提供的另一种飞秒激光双光子聚合微纳加工系统的结构示意图；
图3a是本发明实施例二提供的一种用于同时加工4个微纳器件的动态取像 装置的局部结构示意图；
图3b是本发明实施例二提供的一种用于加工L型器件的动态取像装置的局部结构示意图；
图3c是本发明实施例二提供的一种在光敏材料上制得的L型器件的一层截面的结构示意图；
图4是本发明实施例三提供的一种飞秒激光双光子聚合微纳加工系统的结构示意图；
图5是本发明实施例四提供的一种飞秒激光双光子聚合微纳加工方法的流程示意图；
图6是本发明实施例五提供的一种飞秒激光双光子聚合微纳加工方法的流程示意图。
具体实施方式
下面结合附图和实施例对本发明作进一步的详细说明。可以理解的是，此处所描述的具体实施例仅仅用于解释本发明，而非对本发明的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与本发明相关的部分而非全部内容。
实施例一
本发明实施例一提供一种飞秒激光双光子聚合微纳加工系统。图1是本发明实施例一提供的一种飞秒激光双光子聚合微纳加工系统的结构示意图。如图1所示，所述飞秒激光双光子聚合微纳加工系统包括：飞秒激光器11，用于产生飞秒激光；外光路调制单元12，用于对所述飞秒激光进行调制；取像装置13，用于对三维微纳器件的截面图形逐层进行取像，以使调制后的飞秒激光形成按照所述各层截面图形排列的并行光束；聚焦透镜14，用于将按照所述各层截面图形排列的并行光束分别聚焦在光敏材料15内，形成由多个焦点组成的平面图形，焦点处光敏材料发生固化，以实现所述三维微纳器件的每层截面结构一次投影成形；位移台16，用于对放置在其上的所述光敏材料15的位置进行微动调 节；计算机17，用于对所述位移台16和所述取像装置13进行控制；监控装置18，用于对所述光敏材料15的微纳加工过程进行实时监控。
需要说明的是，可以在位移台16上固定载玻片19，用于放置光敏材料15。另外，监控装置18可以采用CCD(Charged Coupled Device，电荷耦合器件)图像传感器作为核心部件。此外，也可以在取像装置13和聚焦透镜14之间设置扫描阵镜，由于扫描阵镜的响应速度更快，可使加工速度进一步提高。
还需要说明的是，上述的取像装置13，通过计算机17的控制可在其上形成三维微纳器件的各层截面图形，并将一束飞秒激光形成按照各层截面图形排列的多束并行的飞秒激光，以实现对光敏材料进行逐层微纳加工，对应地，位移台16只需沿微纳器件的截面厚度方向运动。更为一般的情况，在取像装置13上也可以不形成三维微纳器件的各层截面图形，此时，取像装置13可以只将一束飞秒激光分成多束并行的飞秒激光，可以实现对光敏材料进行多点并行微纳加工以同时制得多个微纳器件，对应地，位移台16需按照预设轨迹移动。其中，所述预设轨迹与所要制作的三维微纳器件的各个加工点的分布有关。
在本实施例中，进一步地，所述外光路调制单元12包括但不限于在所述飞秒激光的前进路径上依次排列的再生放大器121、快门122、衰减器123、准直透镜组124以及孔径光阑125。飞秒激光器11产生的飞秒激光为超短脉冲的激光，需经过外光路调制单元12对该飞秒激光进行调制，才能够对光敏材料15进行微纳加工。本发明是多焦点并行逐层加工，与单焦点逐点加工相比，需要飞秒激光的能量较大，因此需要再生放大器121将飞秒激光的能量进行放大；经过能量放大的光束通过快门122控制其通断状态，然后通过衰减器123调节其能量大小。利用衰减器123对光束能量的控制，可以调节每束光焦点处中心强度，进而实现对加工分辨率的控制。然后再通过准直透镜组124，其中，准直透镜组124包括一个短焦距透镜124a和一个长焦距透镜124b。由于激光的能量在空间上呈高斯分布，激光光束边缘部分的光强比中心弱，为了减少由于光束截面上光强分布不均匀造成的取像截面光强差异，需要利用准直透镜组124对光束进行准直和扩束，以使激光光束的中心区域的光强度分布相对均匀。然后，再利用孔径光阑125滤掉光束边缘部分，得到截面光强分布近似均匀的飞秒激 光光束。
需要说明的是，除了上述的对飞秒激光起到调制作用的器件外，在飞秒激光的前进路径上且在取像装置13前，根据实际需要还可以设置其他的器件，例如为了使微纳加工系统的结构更紧凑，在飞秒激光的前进路径上且在孔径光阑125的后面设置全反光镜。
本发明实施例一提供的飞秒激光双光子聚合微纳加工系统，通过在飞秒激光进行微纳加工的光路中设置取像装置，不仅可以将一束飞秒激光分成多束并行的飞秒激光，以实现同时加工多个三维微纳器件，还可以对所要制得的器件的每层截面图形一次投影成形，且每层截面图形可以不同，这样可以加工制得任意复杂的三维微纳器件，从而大大提高加工效率和工艺流量；此外，在进行逐层微纳加工的过程中，位移台只需沿微纳器件的截面厚度方向运动，而不需要在平面二维方向上逐点移动，这样不仅可以使三维微纳器件的每层截面加工成形所需要的时间显著减少，提高加工效率和工艺流量，还可以降低其在平面二维方向的定位精度要求，使加工工艺简化，难度降低。
基于上述原理，飞秒激光双光子聚合微纳加工系统可以有多种具体的实现方式，例如，取像装置可以为动态取像装置或者静态取像装置，并且，对于不同种类的取像装置，还可以选择不同的设备来实现。只要能实现在飞秒激光的微纳加工的过程中，取像装置不仅可以使一束飞秒激光分成多束并行的飞秒激光，而且还可以对所要制得的三维微纳器件的每层截面图形一次投影成形即可，下面将就优选实施方式进行详细说明。
实施例二
本发明实施例二还提供一种飞秒激光双光子聚合微纳加工系统。在实施例一的基础上，本实施例的取像装置采用动态取像装置。
在本实施例中，所述计算机17用于对所述取像装置进行控制，包括：所述计算机用于对所述三维微纳器件的结构进行建模，并将建模所得的模型转换成数字电压信号加载到动态取像装置上，以在所述动态取像装置上形成所述三维微纳器件的各层截面图形。具体地，计算机17可以通过在其中的软件控制单元来进行计算机辅助设计，对需加工的三维微纳器件建立三维模型，将建成的三 维模型分割为多层截面图形，然后再将每层截面图形逐点分解，并得到由多点组成的相应层的截面图形。然后，将计算机17设计出的三维微纳器件的每层截面图形转换为数字电压信号，加载到动态取像装置上，并在动态取像装置上形成三维微纳器件的各层截面图形。需要说明的是，上述软件控制单元中的辅助设计软件可选现有的商用软件，例如，CAD(Computer Aided Design，计算机辅助设计)，其中CAD文件可选用标准的STL文件格式。
进一步地，所述动态取像装置包括多个像素单元，其中，在计算机控制下处于打开状态的像素单元在所述动态取像装置上形成所述三维微纳器件的各层截面图形。
更进一步地，所述动态取像装置的每个像素单元在计算机控制下单独开合，当飞秒激光照射在所述动态取像装置上时，处于打开状态的像素单元反射或透射飞秒激光，将一束飞秒激光分成按照特定形状排列的多束飞秒激光以进行微纳加工。
具体地，将计算机的软件控制单元设计的三维微纳器件模型的第一层截面图形转化成数字电压信号，然后将数字电压信号加载在动态取像装置上，每个信号控制一个像素单元。当飞秒激光照射在动态取像装置上时，通过数字电压信号控制每个像素单元的开合，可形成按照所述第一截面图形排列的多束透射或反射光束，并加工形成器件的第一层截面结构；再将器件模型的第二层截面图形转换成数字电压信号，并加载到动态取像装置上，可形成按照所述第二截面图形排列的多束透射或反射光束，并加工形成器件的第二层截面结构，依次进行，最终可通过逐层聚合作用得到完整的三维微纳器件。
在本实施例中，动态取像装置可以采用液晶显示器(Liquid Crystal Display，简称LCD)或数字光处理装置(Digital Light Procession，简称DLP)，其中，液晶显示器和数字光处理装置皆属于空间光调制器(Spatial Light Modulator，简称SLM)。
接下来就对动态取像装置分别采用液晶显示器和数字光处理装置时如何实现将一束飞秒激光分成多束飞秒激光做进一步地说明。
图2a是本发明实施例二提供的一种飞秒激光双光子聚合微纳加工系统的结 构示意图。在图2a中，采用液晶显示器131作为动态取像装置，并且为了使整个微纳加工系统的结构更紧凑，在飞秒激光的前进路径上且在孔径光阑125和液晶显示器131之间设置了全反射镜21。具体地，液晶显示器131的每个像素单元由装有液晶材料的盒子构成，每个像素单元可在计算机17控制下单独开合。当飞秒激光光源照射在液晶显示器131上时，液晶显示器131上开启的像素单元可透过飞秒激光，闭合的像素单元则不透过光束。通过控制每一个液晶盒(像素单元)的开合状态，可以形成多束可控的透射光束，经聚焦后在光敏材料内部形成由多个焦点组成的平面图形，焦点处的光敏材料发生双光子聚合，形成具有特定形状的一层截面结构。
图2b是本发明实施例二提供的另一种飞秒激光双光子聚合微纳加工系统的结构示意图。在图2b中，采用数字光处理装置132作为动态取像装置。具体地，数字光处理装置132的核心部件为数字微反射镜器件，数字微反射镜器件由成千上万个微小可倾斜的镜片组成，一个镜片为一个像素单元，每个镜片可向±12°两个角度倾斜，将入射光从两个方向上反射出去。每个像素单元可在计算机17控制下单独开合，当飞秒激光光源照射在数字微反射镜器件上时，处于“开启”状态的镜片将入射光反射到加工光路内参加加工过程，处于“关闭”状态的镜片将入射光反射出加工光路以外，被光吸收器吸收。通过控制每一个镜片的开合状态，可以形成多束可控的反射光束，经聚焦后在光敏材料内部形成由多个焦点组成的平面图形，焦点处的光敏材料发生双光子聚合，形成具有特定形状的一层截面结构。
接下来，首先考虑动态取像装置只是将一束飞秒激光分成多束并行的飞秒激光。图3a是本发明实施例二提供的一种用于同时加工4个微纳器件的动态取像装置的局部结构示意图。参见图3a，动态取像装置(可以为液晶显示面板或者数字微反射镜器件)的局部结构中，每个正方形区域为一个像素单元22，每个像素单元22可通过计算机17控制单独开合。首先可根据加工要求对动态取像装置进行控制，带阴影的像素单元221表示该像素单元处于关闭状态，未带阴影的像素单元222表示该像素单元处于开启状态。
具体地在进行微纳加工时，飞秒激光首先经过外光路调制单元12调制后， 照射在动态取像装置上时，只有处于开启状态的像素单元222可透过或反射飞秒激光，形成4束并行光束，每一束飞秒激光由4个处于开启状态的像素单元222透射或者反射的光束组成。经聚焦透镜14聚焦后在光敏材料15内部形成4个光斑，光斑处光敏材料发生双光子聚合作用。通过计算机17控制位移台16按照预设轨迹移动，可同时并行加工4个微纳器件，整个加工过程可通过监控装置18进行实时监控。也可在动态取像装置和聚焦透镜14中间设置扫描阵镜，利用扫描阵镜将飞秒激光投影到光敏材料15内，由于扫描阵镜的响应速度更快，可使加工速度进一步提高。
需要说明的是，一束飞秒激光可以由多个处于开启状态的像素单元222透射或反射，其中，多个处于开启状态的像素单元222所具有的形状可以为正方形，也可以为长方形。此外，在实际应用中，根据加工要求，通过选取具有不同分辨率的动态取像装置以及灵活控制其中的每个像素单元的开合状态，可控制并行光束的数量、强度、形状、间距及分布情况，从而控制并行加工的器件个数、最小加工尺寸、间距及分布情况，不仅使加工速度大大提高，并且具有很强的工艺灵活性。同时，由于每个像素单元开合切换速度非常快，仅为数微秒，有助于进一步提高加工速度和灵活控制曝光时间，从而提高加工分辨率。作为动态取像装置的液晶显示装置或数字光处理装置的像素单元可达到上百万个，因此可以很容易实现成千上万束光斑，实现超大规模并行曝光，同时加工成千上万个微纳器件。
接下来，进一步地考虑使用动态取像装置来进行逐层微纳加工。图3b是本发明实施例二提供的一种用于加工L形器件的动态取像装置的局部结构示意图。参见图3b，与图3a中相同的是，每个正方形区域为一个像素单元22，每个像素单元22可通过计算机17控制单独开合。首先可根据加工要求对作为动态取像装置的空间调制器进行控制，带阴影的像素单元221表示该像素单元处于关闭状态，未带阴影的像素单元222表示该像素单元处于开启状态。此外，在图3b中，处于开启状态的像素单元222构成了L形器件的图形。
具体地在进行微纳加工时，飞秒激光首先经过外光路调制单元12调制后，照射在动态取像装置上时，只有处于开启状态的像素单元222可透过或反射飞 秒激光。经聚焦透镜14聚焦后在光敏材料15内部形成由多个光斑组成的L形平面图形，光斑处光敏材料15发生双光子聚合作用，聚合点组成器件的一层截面结构，如图3c所示的L型器件的一层截面图形23。然后通过计算机17控制动态取像装置中的各个像素单元22的开合时间，可以灵活控制曝光时间，提高加工精度。利用计算机17控制位移台16沿与所述飞秒激光照射所述光敏材料15的方向平行的方向(在图2a和图2b中为纵向)上每次移动一层截面厚度的距离，通过逐层加工最终可以得到一个完整的微纳器件，且整个加工过程可通过监控装置18进行实时监控。
传统双光子聚合微纳加工采用单光束逐点加工的方式，加工同样的L型器件的一层截面部件需要的时间为各点加工时间总和，而采用本发明的逐层加工的方式，一层截面部件的各点可以同时加工，加工每层截面所需时间与传统方式加工一个点的时间相当，加工速度显著提高。每层截面加工时间与动态取像装置响应时间、光敏材料曝光时间有关，每个像素单元开合切换速度非常快，因此可精确控制曝光时间，有助于提高加工分辨率。此外，通过采用动态取像装置作为取像装置，可以灵活地控制其上的每个像素单元的开合状态，以形成任意复杂图形；并且利用动态取像装置可以将器件的一层截面一次加工完成，每层截面图形可为任意复杂图形，这样通过逐层加工，可以将任意复杂的三维微纳结构快速、灵活的加工出来。
需要说明的是，上述的一个处于开启状态的像素单元222透射或反射的光束为最小光束，像素单元的大小决定最小加工尺寸的大小。因此，光束经聚焦后，实际在光敏材料15内的最小书写单元为像素单元的尺寸除以缩小倍数，其中，缩小倍数取决于所选的聚焦透镜。
此外，动态取像装置可选用市场上现有的液晶显示装置或数字光处理装置，也可以根据需要加工的最小尺寸定制，动态取像装置的像素单元尺寸越小，透射或反射的飞秒激光光速越细，加工分辨率就越高。
实施例三
本发明实施例三还提供一种飞秒激光双光子聚合微纳加工系统。与实施例二不同的是，本实施例的取像装置采用静态取像装置。
进一步地，静态取像装置可以采用掩模板。图4是本发明实施例三提供的一种飞秒激光双光子聚合微纳加工系统的结构示意图。如图4所示，静态取像装置采用掩模板133，并且为了使整个微纳加工系统的结构更紧凑，在飞秒激光的前进路径上且在孔径光阑125和掩模板133取像装置13之间设置了全反射镜21。
在本实施例中，优选地，所述掩模板133包括多个微区，每个微区包含所述三维微纳器件的一层截面图形。需要说明的是，每个微区的尺寸可以为微器件各层截面实际尺寸的倍数，具体倍数取决于所采用的聚焦透镜的聚焦倍数。
在本实施例中，进一步地，所述计算机17用于对所述取像装置进行控制，包括：所述计算机17用于在微纳加工过程中对所述掩膜板133的位置进行微动调节，以实现对所述三维微纳器件的各层截面图形的取像。
需要说明的是，在掩模板133上形成三维微纳器件的截面图形与动态取像装置的不同，具体可以为：根据计算机17设计的三维微纳器件的每层截面图形，制作掩模板133。掩模板133可以选用对飞秒激光光源具有高透过率的玻璃板，在玻璃板表面分区制作器件的每层截面图形。在每个微区内，利用微纳加工技术(如蒸镀或溅射、光刻、湿法刻蚀等)在玻璃表面制作金属图形，覆盖金属的区域不透过飞秒激光，未覆盖金属的区域则可透过飞秒激光。每个透光区域与器件的每层截面图形上各点相对应，面积为对应点的数倍，具体扩大倍数根据聚焦透镜的聚焦倍数确定。同时在玻璃表面每个微区内制作对准标记，用于对每个微区进行定位。
下面对采用掩模板作为取像装置进行微纳加工来做进一步地描述。在进行微纳加工时，飞秒激光首先经过外光路调制单元12调制后，照射在作为静态取像装置的掩膜板133上。由于掩模板133与计算机17相连，利用计算机17调节掩模板133，使飞秒激光对准掩模板133上与器件第一层截面图形相对应的区域，光束透过透光区域在掩膜板133的另一侧空间形成多束光，经聚焦透镜14聚焦后在光敏材料15内部形成由多个焦点组成的平面图形，在焦点处的光敏材料15发生双光子聚合作用，发生固化，多个固化点构成器件的第一层截面结构。然后通过计算机17控制位移台16在纵向上移动(在图4中)一层厚度的距离， 同时利用计算机17调节掩模板133的位置，使飞秒激光对准掩模板133上与器件的第二层截面图形相对应的微区，加工形成器件的第二层截面结构。依次下去，最终可通过逐层聚合作用得到完整的三维微纳器件，整个加工过程可通过监控装置18实时观察。
需要说明的是，上述是采用掩膜板133进行逐层微纳加工。此外，也可以采用掩膜板133进行多点并行微纳加工，同时加工多个三维微纳器件。在此情况下，掩膜板133的每个微区设置有多个透光区域，每个微区与每个要制作的三维微纳器件对应。在进行微纳加工时，飞秒激光首先经过外光路调制单元12调制后，照射在掩膜板133上，通过透射形成多束并行光束，每一束飞秒激光由每个微区中的透光区域透射的光束组成。经聚焦透镜14聚焦后在光敏材料15内部形成多个光斑，光斑处光敏材料发生双光子聚合作用。通过计算机17控制位移台16按照预设轨迹移动，可同时并行加工多个微纳器件，整个加工过程可通过监控装置18进行实时监控。
随着光刻技术的发展，光学掩模板的制作技术也取得了很大的进步，利用各种光刻技术，可以很容易在玻璃基板表面制作各种图形，且制作成本较低。
在本实施例的技术方案中，利用作为静态取像装置的掩模板对器件的每层截面一次取像成形，使加工效率显著提高；同时掩模板制作工艺成熟，微区内每个透光区域可以做到零间隔，因此，利用掩模板进行取像可以加工得到平滑的三维微纳器件的结构。
实施例四
本发明实施例四提供一种飞秒激光双光子聚合微纳加工方法。本实施例的飞秒激光双光子聚合微纳加工方法通过上述各实施例所述的飞秒激光双光子聚合微纳加工系统来执行，关于本实施例中概念的解释说明以及相关原理的描述，请参见上述各实施例，在此不再赘述。
本实施例所述的飞秒激光双光子聚合微纳加工方法用于对光敏材料进行逐层微纳加工，并通过监控装置对所述光敏材料的逐层微纳加工过程进行实时监控。图5是本发明实施例四提供的一种飞秒激光双光子聚合微纳加工方法的流程示意图。如图5所示，所述飞秒激光双光子聚合微纳加工方法包括：
步骤301、打开飞秒激光器，产生飞秒激光。
步骤302、通过外光路调制单元对所述飞秒激光进行调制。
进一步地，通过外光路调制单元对所述飞秒激光进行调制，包括：通过在外光路调制单元中的且在所述飞秒激光的前进路径上依次排列的再生放大器、快门、衰减器、准直透镜组以及孔径光阑对所述飞秒激光进行调制。
步骤303、通过计算机控制取像装置对三维微纳器件的第一层截面图形进行取像，以使调制后的飞秒激光形成按照所述各层截面图形排列的并行光束。
步骤304、通过聚焦透镜将按照所述第一层截面图形排列的并行光束聚焦在所述光敏材料内，形成由多个焦点组成的平面图形，各焦点处光敏材料发生固化，以实现所述三维微纳器件的第一层截面结构一次投影成形。
步骤305、通过计算机控制位移台移动所述三维微纳器件一层截面厚度的距离，其中，所述位移台的移动方向与所述飞秒激光照射所述光敏材料的方向平行。
步骤306、通过计算机控制所述取像装置对所述三维微纳器件的剩余各层截面图形逐层进行取像，每层截面结构加工成形后，利用计算机控制所述位移台移动所述三维微纳器件的一层截面厚度的距离，直至整个三维微纳器件加工完成。
进一步地，通过计算机控制取像装置对三维微纳器件的各层截面图形进行取像，包括：当所述取像装置采用动态取像装置时，通过计算机对所述三维微纳器件的结构进行建模，并将建模所得的模型转换成数字电压信号加载到动态取像装置上，控制所述动态取像装置中的像素单元的开合状态，以实现对所述三维微纳器件的各层截面图形的取像；或者当所述取像装置采用包含所述三维微纳器件的各层截面图形的静态取像装置时，通过计算机在微纳加工过程中对所述静态取像装置的位置进行微动调节，以实现对所述三维微纳器件的各层截面图形的取像。
本发明实施例四提供的飞秒激光双光子聚合微纳加工方法，通过在飞秒激光的微纳加工的光路中设置取像装置，可以对所要制得的器件的每层截面图形一次投影成形，且每层截面图形可以不同，这样可以加工制得任意复杂的三维 微纳器件，从而大大提高加工效率和工艺流量；此外，在进行逐层微纳加工的过程中，位移台只需沿微纳器件的截面厚度方向运动，而不需要在平面二维方向上逐点移动，这样不仅可以使三维微纳器件的每层截面加工成形所需要的时间显著减少，从而提高加工效率和工艺流量，还可以降低其在平面二维方向的定位精度要求，从而使加工工艺简化，难度降低。
实施例五
本发明实施例五提供一种飞秒激光双光子聚合微纳加工方法。本实施例的飞秒激光双光子聚合微纳加工方法通过上述实施例一、实施例二和实施例三所述的飞秒激光双光子聚合微纳加工系统来执行，关于本实施例中概念的解释说明以及相关原理的描述，请参见上述实施例一、实施例二和实施例三，在此不再赘述。
本实施例所述的飞秒激光双光子聚合微纳加工方法用于对光敏材料进行多点并行微纳加工以制得多个三维微纳器件，并通过监控装置对所述光敏材料的多点并行微纳加工过程进行实时监控。需要说明的是，本实施例与实施例五不同的是，实施例五是采用取像装置对光敏材料进行逐层微纳加工，而本实施例是采用取像装置对光敏材料进行多点并行微纳加工。图6是本发明实施例五提供的一种飞秒激光双光子聚合微纳加工方法的流程示意图。如图6所示，所述飞秒激光双光子聚合微纳加工方法包括：
步骤401、打开飞秒激光器，产生飞秒激光。
步骤402、通过外光路调制单元对所述飞秒激光进行调制。
步骤403、通过计算机控制取像装置使调制后的一束飞秒激光分成多束并行的飞秒激光。
步骤404、通过聚焦透镜将所述多束并行的飞秒激光聚焦在所述光敏材料内，形成多个焦点且在各焦点处光敏材料发生固化，以得到每个三维微纳器件在第一点处的结构。
步骤405、通过计算机控制位移台按照预设轨迹移动，对所述光敏材料进行多点并行微纳加工，直至所有三维微纳器件加工完成。
在本实施例中，优选为取像装置为动态取像装置。采用动态取像装置进行 微纳加工，不仅使加工速度大大提高，并且具有很强的工艺灵活性。同时，由于动态取像装置中的每个像素单元开合切换速度非常快，仅为数微秒，有助于进一步提高加工速度和灵活控制曝光时间，从而提高加工分辨率。
本发明实施例五提供的飞秒激光双光子聚合微纳加工方法，通过在飞秒激光的微纳加工的光路中设置取像装置，可以将一束飞秒激光分成多束并行的飞秒激光，可以同时加工多个三维微纳器件，这样可以大大提高加工效率和工艺流量。
注意，上述仅为本发明的较佳实施例及所运用技术原理。本领域技术人员会理解，本发明不限于这里所述的特定实施例，对本领域技术人员来说能够进行各种明显的变化、重新调整和替代而不会脱离本发明的保护范围。因此，虽然通过以上实施例对本发明进行了较为详细的说明，但是本发明不仅仅限于以上实施例，在不脱离本发明构思的情况下，还可以包括更多其他等效实施例，而本发明的范围由所附的权利要求范围决定。

Claims (15)

  1. 一种飞秒激光双光子聚合微纳加工系统，其特征在于，包括：
    飞秒激光器，用于产生飞秒激光；
    外光路调制单元，用于对所述飞秒激光进行调制；
    取像装置，用于对三维微纳器件的截面图形逐层进行取像，以使调制后的飞秒激光形成按照所述各层截面图形排列的并行光束；
    聚焦透镜，用于将按照所述各层截面图形排列的并行光束聚焦在光敏材料内，形成由多个焦点组成的平面图像，各焦点处光敏材料发生固化，以实现所述三维微纳器件的每层截面结构一次投影成形；
    位移台，用于对放置在其上的所述光敏材料的位置进行微动调节；
    计算机，用于对所述位移台和所述取像装置进行控制；
    监控装置，用于对所述光敏材料的微纳加工过程进行实时监控。
  2. 根据权利要求1所述的系统，其特征在于，所述取像装置为动态取像装置。
  3. 根据权利要求2所述的系统，其特征在于，所述动态取像装置为液晶显示器或数字光处理装置。
  4. 根据权利要求2所述的系统，其特征在于，所述计算机用于对所述取像装置进行控制，包括：所述计算机用于对所述三维微纳器件的结构进行建模，并将建模所得的模型转换成数字电压信号加载到动态取像装置上，以在所述动态取像装置上形成所述三维微纳器件的各层截面图形。
  5. 根据权利要求4所述的系统，其特征在于，所述动态取像装置包括多个像素单元，其中，在计算机控制下处于打开状态的像素单元在所述动态取像装置上形成所述三维微纳器件的各层截面图形。
  6. 根据权利要求5所述的系统，其特征在于，所述动态取像装置的每个像素单元在计算机控制下单独开合，当飞秒激光照射在所述动态取像装置上时，处于打开状态的像素单元反射或透射飞秒激光，将一束飞秒激光分成按照特定形状排列的多束飞秒激光以进行微纳加工。
  7. 根据权利要求1所述的系统，其特征在于，所述取像装置为静态取像装置。
  8. 根据权利要求7所述的系统，其特征在于，所述静态取像装置为掩模板。
  9. 根据权利要求8所述的系统，其特征在于，所述掩模板包括多个微区，每个微区包含所述三维微纳器件的一层截面图形。
  10. 根据权利要求9所述的系统，其特征在于，所述计算机用于对所述取像装置进行控制，包括：所述计算机用于在微纳加工过程中对所述掩膜板的位置进行微动调节，以实现对所述三维微纳器件的各层截面图形的取像。
  11. 根据权利要求1所述的系统，其特征在于，所述外光路调制单元包括在所述飞秒激光的前进路径上依次排列的再生放大器、快门、衰减器、准直透镜组以及孔径光阑。
  12. 一种飞秒激光双光子聚合微纳加工方法，采用权利要求1所述的飞秒激光双光子聚合微纳加工系统来执行，其特征在于，所述方法用于对光敏材料进行逐层微纳加工，并通过监控装置对所述光敏材料的逐层微纳加工过程进行实时监控，所述方法包括：
    打开飞秒激光器，产生飞秒激光；
    通过外光路调制单元对所述飞秒激光进行调制；
    通过计算机控制取像装置对三维微纳器件的第一层截面图形进行取像，以使调制后的飞秒激光形成按照所述第一层截面图形排列的并行光束；
    通过聚焦透镜将按照所述第一层截面图形排列的并行光束聚焦在所述光敏材料内，形成由多个焦点组成的平面图像，各焦点处光敏材料发生固化，以实现所述三维微纳器件的第一层截面结构一次投影成形；
    通过计算机控制位移台移动所述三维微纳器件的一层截面厚度的距离，其中，所述位移台的移动方向与所述飞秒激光照射所述光敏材料的方向平行；
    通过计算机控制所述取像装置对所述三维微纳器件的剩余各层截面图形逐层进行取像，每层截面结构加工成形后，利用计算机控制所述位移台移动所述三维微纳器件的一层截面厚度的距离，直至整个三维微纳器件加工完成。
  13. 根据权利要求12所述的方法，其特征在于，通过计算机控制取像装置对三维微纳器件的各层截面图形进行取像，包括：
    当所述取像装置采用动态取像装置时，通过计算机对所述三维微纳器件的 结构进行建模，并将建模所得的模型转换成数字电压信号加载到动态取像装置上，控制所述动态取像装置中的像素单元的开合状态，以实现对所述三维微纳器件的各层截面图形的取像；或者
    当所述取像装置采用包含所述三维微纳器件的各层截面图形的静态取像装置时，通过计算机在微纳加工过程中对所述静态取像装置的位置进行微动调节，以实现对所述三维微纳器件的各层截面图形的取像。
  14. 根据权利要求12所述的方法，其特征在于，通过外光路调制单元对所述飞秒激光进行调制，包括：
    通过在外光路调制单元中的且在所述飞秒激光的前进路径上依次排列的再生放大器、快门、衰减器、准直透镜组以及孔径光阑对所述飞秒激光进行调制。
  15. 一种飞秒激光双光子聚合微纳加工方法，采用权利要求1所述的飞秒激光双光子聚合微纳加工系统来执行，其特征在于，所述方法用于对光敏材料进行多点并行微纳加工以制得多个三维微纳器件，并通过监控装置对所述光敏材料的多点并行微纳加工过程进行实时监控，所述方法包括：
    打开飞秒激光器，产生飞秒激光；
    通过外光路调制单元对所述飞秒激光进行调制；
    通过计算机控制取像装置使调制后的一束飞秒激光分成多束并行的飞秒激光；
    通过聚焦透镜将所述多束并行的飞秒激光聚焦在所述光敏材料内，形成多个焦点且在各焦点处光敏材料发生固化，以得到每个三维微纳器件在第一点处的结构；
    通过计算机控制位移台按照预设轨迹移动，对所述光敏材料进行多点并行微纳加工，直至所有三维微纳器件加工完成。
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