WO2017014399A1 - 텅스텐 전구체 및 이를 포함하는 텅스텐 함유 필름 증착방법 - Google Patents
텅스텐 전구체 및 이를 포함하는 텅스텐 함유 필름 증착방법 Download PDFInfo
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- WO2017014399A1 WO2017014399A1 PCT/KR2016/002675 KR2016002675W WO2017014399A1 WO 2017014399 A1 WO2017014399 A1 WO 2017014399A1 KR 2016002675 W KR2016002675 W KR 2016002675W WO 2017014399 A1 WO2017014399 A1 WO 2017014399A1
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- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 59
- 239000010937 tungsten Substances 0.000 title claims abstract description 59
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 239000002243 precursor Substances 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000000151 deposition Methods 0.000 title abstract description 16
- 150000001875 compounds Chemical class 0.000 claims abstract description 24
- 238000005229 chemical vapour deposition Methods 0.000 claims description 19
- 238000000231 atomic layer deposition Methods 0.000 claims description 14
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical group C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical group 0.000 claims description 6
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 5
- 125000002733 (C1-C6) fluoroalkyl group Chemical group 0.000 claims description 5
- CHVJITGCYZJHLR-UHFFFAOYSA-N cyclohepta-1,3,5-triene Chemical group C1C=CC=CC=C1 CHVJITGCYZJHLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 21
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 20
- 239000007787 solid Substances 0.000 description 12
- 230000008021 deposition Effects 0.000 description 10
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 10
- 239000003446 ligand Substances 0.000 description 6
- 150000003658 tungsten compounds Chemical class 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- -1 oxides Chemical class 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- GVHIREZHTRULPT-UHFFFAOYSA-N 2-methyl-n-trimethylsilylpropan-2-amine Chemical compound CC(C)(C)N[Si](C)(C)C GVHIREZHTRULPT-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- LRDJLICCIZGMSB-UHFFFAOYSA-N ethenyldiazene Chemical compound C=CN=N LRDJLICCIZGMSB-UHFFFAOYSA-N 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 description 3
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 125000003709 fluoroalkyl group Chemical group 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- QNGLIBBVTNARBG-UHFFFAOYSA-N 1-methylcyclopenta-1,3-diene;sodium Chemical compound [Na].CC1=CC=CC1 QNGLIBBVTNARBG-UHFFFAOYSA-N 0.000 description 1
- FYEMRDDWDRLEHX-UHFFFAOYSA-N C1(C=CC=C1)[W] Chemical compound C1(C=CC=C1)[W] FYEMRDDWDRLEHX-UHFFFAOYSA-N 0.000 description 1
- UTOHYPVPMOEDRN-UHFFFAOYSA-N C1=CC=CC=CC1.[Na] Chemical compound C1=CC=CC=CC1.[Na] UTOHYPVPMOEDRN-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- NUUNDIOOYFEMQN-UHFFFAOYSA-N cyclopenta-1,3-diene;sodium Chemical compound [Na].C1C=CC=C1 NUUNDIOOYFEMQN-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 description 1
- 229910000071 diazene Inorganic materials 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- ZBQLRRSOBIYGKD-UHFFFAOYSA-N ethenyldiazene;tungsten Chemical compound [W].C=CN=N ZBQLRRSOBIYGKD-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004896 high resolution mass spectrometry Methods 0.000 description 1
- 231100000086 high toxicity Toxicity 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- WJBNXEUDLVCWBD-UHFFFAOYSA-N n-trimethylsilylbutan-1-amine Chemical compound CCCCN[Si](C)(C)C WJBNXEUDLVCWBD-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical group [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
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- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F17/00—Metallocenes
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
Definitions
- the present invention relates to a novel precursor compound as a tungsten precursor suitable for use in chemical vapor deposition or atomic layer deposition, which is a deposition process that can be used to form a dielectric film in a semiconductor device as an organic metal, and a film deposition method using the same.
- Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) provide a thin film for semiconductor devices because they can achieve conformal films (metals, oxides, nitrides, etc.) through fine tuning of parameters during the process. It has been applied as a technique for deposition. Since film growth is primarily controlled by the chemical reaction of metal-organic compounds (precursors), it is important to predict their properties and reaction processes to develop optimal precursors. Therefore, development of efficient precursors for obtaining specific properties according to specific types of films has been continued.
- precursors metal-organic compounds
- Precursors must consider some of their unique properties before using them as molecules for CVD and ALD processes.
- Another important requirement to be considered for precursors in the precursor design phase is to remove impurities from the film from the ligand during the deposition process.
- Tungsten is used in a variety of applications useful in the fabrication of nano-devices.
- the deposition of pure tungsten may be used to fill holes ("contact holes") that make junctions in the transistor source and drain or to fill vias between successive layers of metal. This approach is known as a "tungsten plug" process.
- WF 6 may diversify the use of tungsten because of the good properties of the deposited film.
- an adhesion / barrier layer such as Ti / TiN, to protect the underlying Si from penetration by fluorine or to ensure the adhesion of tungsten to silicon dioxide.
- Tungsten-silicide can be used to increase the conductivity of the gate line on top of the polysilicon gate and thus increase the transistor speed. This approach is widely used in DRAM fabrication.
- the gate at this time is a word line for the circuit.
- WF 6 and SiH 4 can be used, but dichlorosilane (SiCl 2 H 2 ) is more commonly used as a silicon source because it allows higher deposition temperatures, resulting in lower fluorine concentrations in the deposited film. .
- Tungsten nitride is considered to be a good barrier to copper diffusion in microelectronic circuits.
- WNx can also be used for electrodes for thin-film capacitors and field-effect transistors.
- WF 6 can be used for the deposition of pure tungsten films in CVD mode using H 2 at high temperatures because of the liquid and highly volatile +6 of W (Applied Surface Science, 73, 1993, 51-57). ; Applied Surface Science, 78, 2, 1994, 123-132]. WF 6 can also be used in CVD mode in combination with silanes for the production of tungsten silicide films at low temperatures (Y. Yamamoto et al. Proc. Int. Conf. On CVD-XIII (1996) 814; Surface Science 408). (1998) 190-194). However, WF 6 is limited by the high thermal budget required for the deposition of pure tungsten films or because of the fluorine that causes etching of the underlying silicon surface.
- W (CO) 2 (1,3-butadiene) 2 can be used in the CVD mode but a deposition of tungsten carbide film is formed (Jipaet al Chemical Vapor Deposition 2010, 16 (7-9), 239).
- the +6 valence oxidation state of W can be used in CVD mode for the deposition of pure tungsten but requires a high deposition temperature resulting in carbon contamination.
- US 7,560,581B2 discloses the use of bis-alkylimido bis-dialkylamino tungsten precursors for making tungsten nitride in ALD mode with or without copper barrier diffusion applications.
- Diazabutadiene (DAD) ligands are diimine ligands that can be used under different oxidation states.
- US Pat. No. 7,754,908 to Reuter et al. Discloses the use of bis-alkylimido diazabutadiene tungsten precursors for the production of tungsten containing films.
- alkylimido groups has the disadvantage that carbon can be introduced in the resulting film.
- Tungsten molecules may contain several types of ligands that are not homologous ligands. Therefore, their synthesis is done in several stages, and the complexity and difficulty of the synthesis will eventually increase the cost.
- Winter WO2012 / 027357 discloses a method for forming a thin film on a substrate comprising contacting a surface with a precursor compound having a transition metal and at least one alkyl-1,3-diazabiadiene ligand. .
- tungsten containing film pure tungsten, tungsten nitride or tungsten silicide
- CVD or ALD mode can be problematic, such as high C, O or F content in the film. Accordingly, there is a need for a tungsten containing precursor suitable for CVD or ALD deposition processes.
- Preferred properties of tungsten containing precursors for these applications include: i) liquid form or low melting point solids; ii) high volatility; iii) thermal stability to avoid degradation during handling and transport; And iv) appropriate reactivity during the CVD / ALD process; And v) pure tungsten film should be deposited in CVD or ALD (thermal or plasma mode) at a temperature below 200, preferably below 150, while at the same time the thermal stability should not be too high to allow deposition at low temperatures.
- Patent Document 1 KR10-2012-0059440 A
- Patent Document 2 KR10-2008-93393 A
- Patent Document 3 KR10-2014-0127684 A
- An object of the present invention is to provide a novel tungsten precursor compound as a precursor for depositing a tungsten thin film under chemical vapor deposition or atomic layer deposition process conditions and to provide a tungsten deposition method using the same.
- the present invention provides a tungsten (W) precursor compound represented by the following formula (1).
- R 1 is selected from the group consisting of a C 1-6 alkyl group, C 1-6 fluoroalkyl or OR "
- R 2 is a cyclopentadiene or R 'substituted with R'.
- Substituted cycloheptatriene R 3 is halogen or cyclopentadiene substituted R '
- R' is R ", OR"
- PR " 2 R ′′ is H, CH 3 , C 2 H 5 , C 3 H 7 , iC 3 H 7 , nC 4 H 9 , tC 4 H 9 It is selected from the group consisting of.
- the compound represented by Chemical Formula 1 provides a tungsten precursor compound represented by the following Chemical Formulas 2 to 4.
- the present invention provides a method of forming a tungsten thin film using the tungsten precursor represented by the formula (1).
- the thin film process is preferably performed by chemical vapor deposition (CVD) or atomic layer deposition (ALD).
- the tungsten precursor represented by Chemical Formula 1 of the present invention is a novel compound having improved thermal stability and volatility, and is easily synthesized, has high productivity, and has excellent advantages in storage and transport. Can be deposited.
- Figure 2 shows 13 C NMR analysis data of bis-cyclopentadienyl-bis- (t-butylimido) tungsten (VI).
- FIG. 3 is a graph showing HR-MS analysis data of bis-cyclopentadienyl-bis- (t-butylimido) tungsten (VI).
- the present invention relates to a tungsten precursor compound represented by the formula (1).
- R 1 is selected from the group consisting of a C 1-6 alkyl group, C 1-6 fluoroalkyl or OR "
- R 2 is a cyclopentadiene or R 'substituted with R'.
- Substituted cycloheptatriene R 3 is halogen or cyclopentadiene substituted R '
- R' is R ", OR"
- PR " 2 R ′′ is H, CH 3 , C 2 H 5 , C 3 H 7 , iC 3 H 7 , nC 4 H 9 , tC 4 H 9 It is selected from the group consisting of.
- R 1 is selected from a C 1-6 alkyl group, a C 1-6 fluoroalkyl group, or OR ′′, preferably a C 1-4 alkyl group, a C 1-4 fluoroalkyl group, CH 3 , C 2 H 5 , C 3 H 7 , iC 3 H 7 , nC 4 H 9 , tC 4 H 9 It is most preferable to use what is selected from.
- R ′ is selected from R ′′, OR ′′, NR ′′ 2 , SiR ′′ 3 , PR ′′ 2 , preferably H, CH 3 , C 2 H 5 , C 3 H 7 , iC 3 H 7 , C 4 H 9 , tC 4 H 9 , N (CH 3 ) 2 , N (C 2 H 5 ) 2 , N (CH 3 ) (C 2 H 5 ), N (CH 3 ) (C 3 H 7 ), N (C 3 H 7 ) 2 , N (iC 3 H 7 ) 2 , N (CH 3 ) (iC 3 H 7 ), N (CH 3 ) (nC 4 H 9 ), N (nC 4 H 9 ) 2 , N ( tC 4 H 9 ) 2 , N (CH 3 ) (tC 4 H 9 ), N (C 2 H 5 ) (C 3 H 7 ), N (C 2 H 5 ) (iC 3 H 7 ), N (C 2 H 5 ) (nC
- R 1 is selected from a C 1-6 alkyl group, a C 1-6 fluoroalkyl group, or OR ′′, preferably a C 1-4 alkyl group, a C 1-4 fluoroalkyl group, CH 3 , C 2 H 5 , C 3 H 7 , iC 3 H 7 , nC 4 H 9 , tC 4 H 9 It is most preferable to use what is selected from.
- R ′ is selected from R ′′, OR ′′, NR ′′ 2 , SiR ′′ 3 , PR ′′ 2 , preferably H, CH 3 , C 2 H 5 , C 3 H 7 , iC 3 H 7 , C 4 H 9 , tC 4 H 9 , N (CH 3 ) 2 , N (C 2 H 5 ) 2 , N (CH 3 ) (C 2 H 5 ), N (CH 3 ) (C 3 H 7 ), N (C 3 H 7 ) 2 , N (iC 3 H 7 ) 2 , N (CH 3 ) (iC 3 H 7 ), N (CH 3 ) (nC 4 H 9 ), N (nC 4 H 9 ) 2 , N ( tC 4 H 9 ) 2 , N (CH 3 ) (tC 4 H 9 ), N (C 2 H 5 ) (C 3 H 7 ), N (C 2 H 5 ) (iC 3 H 7 ), N (C 2 H 5 ) (nC
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Abstract
Description
Claims (12)
- 하기 화학식 1로 나타내는 텅스텐 전구체 화합물.<화학식 1>(상기 화학식 1에서,R1은 C1-6 알킬기, C1-6 플로로알킬 또는 OR"로 이루어진 군에서 선택되고,R2는 R'이 치환된 사이클로펜타디엔(cyclopentadien)또는 R'이 치환된 사이클로헵타트리엔(cycloheptatriene)이고,R3은 할로겐 또는 R'이 치환된 사이클로펜타디엔(cyclopentadien)이고,R'은 R", OR", NR"2, SiR"3, PR"2 로 이루어진 군에서 선택되고,R"은 H, CH3, C2H5, C3H7, i-C3H7, n-C4H9, t-C4H9 로 이루어진 군에서 선택된다.)
- 제 2항에 있어서,상기 R1은 CH3, C2H5, C3H7, i-C3H7, n-C4H9, t-C4H9로 이루어진 군에서 선택되고, R'은 H, CH3, C2H5, OH, OCH3, OC2H5, N(CH3)2, N(C2H5)2, N(CH3)(C2H5), SiR"3, PR"2로 이루어진 군에서 선택된 텅스텐 전구체 화합물.
- 제 3항에 있어서,상기 R'은 H, CH3, C2H5, OH, OCH3, OC2H5, N(CH3)2, N(C2H5)2, N(CH3)(C2H5), SiR"3, PR"2로 이루어진 군에서 선택된 텅스텐 전구체 화합물.
- 제 4항에 있어서,상기 R'은 H, CH3, C2H5, OH, OCH3, OC2H5, N(CH3)2, N(C2H5)2, N(CH3)(C2H5), SiR"3, PR"2로 이루어진 군에서 선택된 텅스텐 전구체 화합물.
- 제 2항에 있어서,상기 R1은 n-C4H9 또는 t-C4H9이고, R'은 H, CH3, C2H5, OCH3, OC2H5, N(CH3)2, N(C2H5)2, N(CH3)(C2H5), Si(CH3)3, P(CH3)2로 이루어진 군에서 선택된 텅스텐 전구체 화합물.
- 제 3항에 있어서,상기 R1은 n-C4H9 또는 t-C4H9이고, R'은 H, CH3, C2H5, OCH3, OC2H5, N(CH3)2, N(C2H5)2, N(CH3)(C2H5), Si(CH3)3, P(CH3)2로 이루어진 군에서 선택되고, R3는 Cl인 텅스텐 전구체 화합물.
- 제 4항에 있어서,상기 R1은 n-C4H9 또는 t-C4H9이고, R'은 H, CH3, C2H5, OCH3, OC2H5, N(CH3)2, N(C2H5)2, N(CH3)(C2H5), Si(CH3)3, P(CH3)2로 이루어진 군에서 선택되고, R3는 Cl인 텅스텐 전구체 화합물.
- 청구항 1에 따르는 텅스텐 전구체 화합물을 이용하여 텅스텐 박막을 형성시키는 방법.
- 제 11항에 있어서,박막 공정이 화학기상증착법(CVD) 또는 원자층 증착법(ALD)에 의해 수행되는 것을 특징으로 하는 방법.
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KR102231296B1 (ko) * | 2018-10-11 | 2021-03-23 | 주식회사 메카로 | 유기금속 전구체 화합물 및 이를 이용하여 제조된 박막 |
CN111233940B (zh) * | 2020-04-01 | 2022-08-30 | 苏州欣溪源新材料科技有限公司 | 钨配合物及其制备方法与应用 |
CN111825728B (zh) * | 2020-07-16 | 2022-11-04 | 苏州欣溪源新材料科技有限公司 | 二氯二茂钨类配合物及其制备方法与应用 |
US11377733B2 (en) * | 2020-08-07 | 2022-07-05 | Sandisk Technologies Llc | Fluorine-free tungsten deposition process employing in-situ oxidation and apparatuses for effecting the same |
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