CN108794521A - 新三甲硅烷基胺衍生物、其制备方法以及使用其的含硅薄膜 - Google Patents
新三甲硅烷基胺衍生物、其制备方法以及使用其的含硅薄膜 Download PDFInfo
- Publication number
- CN108794521A CN108794521A CN201810787047.5A CN201810787047A CN108794521A CN 108794521 A CN108794521 A CN 108794521A CN 201810787047 A CN201810787047 A CN 201810787047A CN 108794521 A CN108794521 A CN 108794521A
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- Prior art keywords
- film
- trimethylsilane
- silicon
- amine derivatives
- present
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- 150000001412 amines Chemical class 0.000 title claims abstract description 46
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 title claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 35
- 239000010703 silicon Substances 0.000 title abstract description 34
- 229910052710 silicon Inorganic materials 0.000 title abstract description 34
- 238000002360 preparation method Methods 0.000 title description 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims description 28
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 22
- 229910052736 halogen Inorganic materials 0.000 claims description 8
- 150000002367 halogens Chemical class 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 7
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 125000006273 (C1-C3) alkyl group Chemical group 0.000 claims description 4
- 238000000151 deposition Methods 0.000 abstract description 20
- 239000007788 liquid Substances 0.000 abstract description 5
- 230000004044 response Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 81
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 29
- 238000006243 chemical reaction Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 18
- 239000000377 silicon dioxide Substances 0.000 description 15
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 14
- 238000000231 atomic layer deposition Methods 0.000 description 13
- 210000002381 plasma Anatomy 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- 239000000706 filtrate Substances 0.000 description 8
- 238000001914 filtration Methods 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000002585 base Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- KOOADCGQJDGAGA-UHFFFAOYSA-N [amino(dimethyl)silyl]methane Chemical compound C[Si](C)(C)N KOOADCGQJDGAGA-UHFFFAOYSA-N 0.000 description 5
- -1 alkoxy silane Chemical compound 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 238000005160 1H NMR spectroscopy Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- GJWAPAVRQYYSTK-UHFFFAOYSA-N [(dimethyl-$l^{3}-silanyl)amino]-dimethylsilicon Chemical compound C[Si](C)N[Si](C)C GJWAPAVRQYYSTK-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- UHOVQNZJYSORNB-MZWXYZOWSA-N deuterated benzene Substances [2H]C1=C([2H])C([2H])=C([2H])C([2H])=C1[2H] UHOVQNZJYSORNB-MZWXYZOWSA-N 0.000 description 4
- 238000002329 infrared spectrum Methods 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- DLEDOFVPSDKWEF-UHFFFAOYSA-N lithium butane Chemical compound [Li+].CCC[CH2-] DLEDOFVPSDKWEF-UHFFFAOYSA-N 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000012686 silicon precursor Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 238000005481 NMR spectroscopy Methods 0.000 description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 238000004817 gas chromatography Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- 238000002411 thermogravimetry Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910000103 lithium hydride Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052987 metal hydride Inorganic materials 0.000 description 2
- 150000004681 metal hydrides Chemical class 0.000 description 2
- MZRVEZGGRBJDDB-UHFFFAOYSA-N n-Butyllithium Substances [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 125000006701 (C1-C7) alkyl group Chemical group 0.000 description 1
- FZZMTSNZRBFGGU-UHFFFAOYSA-N 2-chloro-7-fluoroquinazolin-4-amine Chemical class FC1=CC=C2C(N)=NC(Cl)=NC2=C1 FZZMTSNZRBFGGU-UHFFFAOYSA-N 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- SKYWAOSWRWWISV-UHFFFAOYSA-N N-propan-2-yl-N-(2-silylethyl)propan-2-amine Chemical compound C(C)(C)N(C(C)C)CC[SiH3] SKYWAOSWRWWISV-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910003828 SiH3 Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- SEQDDYPDSLOBDC-UHFFFAOYSA-N Temazepam Chemical compound N=1C(O)C(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 SEQDDYPDSLOBDC-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- YGHUUVGIRWMJGE-UHFFFAOYSA-N chlorodimethylsilane Chemical compound C[SiH](C)Cl YGHUUVGIRWMJGE-UHFFFAOYSA-N 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- UBJFKNSINUCEAL-UHFFFAOYSA-N lithium;2-methylpropane Chemical compound [Li+].C[C-](C)C UBJFKNSINUCEAL-UHFFFAOYSA-N 0.000 description 1
- IHLVCKWPAMTVTG-UHFFFAOYSA-N lithium;carbanide Chemical compound [Li+].[CH3-] IHLVCKWPAMTVTG-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 125000001339 silanediyl group Chemical group [H][Si]([H])(*)* 0.000 description 1
- OLRJXMHANKMLTD-UHFFFAOYSA-N silyl Chemical compound [SiH3] OLRJXMHANKMLTD-UHFFFAOYSA-N 0.000 description 1
- 238000001577 simple distillation Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
- C07F7/081—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
- C07F7/0825—Preparations of compounds not comprising Si-Si or Si-cyano linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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Abstract
提供了新三甲硅烷基胺衍生物,其具有热稳定性、高挥发性和高反应性并且在室温下和压力下呈液态(可以进行处理)的化合物,其可以通过多种沉积方法形成具有优良物理和电学特性的高纯度含硅薄膜。
Description
本申请是名为“新三甲硅烷基胺衍生物、其制备方法以及使用其的含硅薄膜”、申请日为2015年1月8日、申请号为201580009063.6的中国发明专利申请的分案申请。申请201580009063.6是根据专利合作条约提交的国际申请PCT/KR2015/000168进入中国国家阶段的国家申请。
技术领域
本发明涉及到新三甲硅烷基胺衍生物、用于制备其的方法和使用其的含硅薄膜,并且更特别地涉及具有热稳定性和高挥发性并在室温和压力下呈液态(可以进行处理)的新三甲硅烷基胺衍生物、用于制备其的方法和使用其的含硅薄膜。
背景技术
通过半导体领域中的多种沉积方法,含硅薄膜被制成多种形状,如硅膜、二氧化硅膜、氮化硅膜、碳氮化硅膜、氮氧化硅膜等,并且被广泛应用于许多领域中。
特别地,归因于其显著优良的阻挡性和抗氧化性,二氧化硅膜和氮化硅膜可以在制造装置中起绝缘膜、防扩散膜、硬质掩模、蚀刻停止层、籽晶层、间隔物、沟槽隔离物、金属间介电材料和保护层的作用。
近期,多晶硅薄膜已经被用于薄膜晶体管(TFT)、太阳能电池等,并且因此,其应用领域得到了改变。
作为已知用于制造含硅薄膜的典型技术,存在通过使混合气体形式的硅前体与反应气体反应在基底表面上形成膜或者通过在表面上直接反应形成膜的金属有机化学气相沉积(MOCVD);以及在基底表面上物理或化学吸附气体形式的硅前体,随后依次引入反应气体形成膜的原子层沉积(ALD)。另外,用于制造薄膜的多种技术,如低压化学气相沉积(LPCVD)、等离子体增强化学气相沉积(PECVD)、等离子体增强原子层沉积(PEALD)(使用能够在低温下沉积的等离子体)等被用于下一代半导体和显示装置制造工艺,由此被用于形成超精细图案和沉积在纳米尺寸的厚度下具有均匀和优良特性的超薄膜。
如韩国专利特许公开No.KR 2007-0055898中所述的用于形成含硅薄膜的前体的典型实例包括硅烷、硅烷氯化物、氨基硅烷和烷氧基硅烷,并且更具体地,硅烷氯化物如二氯硅烷(SiH2Cl2)和六氯二硅烷(Cl3SiSiCl3);以及三甲硅烷基胺(N(SiH3)3)、双-二乙基氨基硅烷(H2Si(N(CH2CH3)2)2)和二异丙基氨基硅烷(H3SiN(i-C3H7)2)等被用于半导体和显示器的大规模生产。
然而,根据由装置的超高集成导致的装置微型化、纵横比的增加以及装置材料的多样化,需要形成具有均匀和薄的厚度以及在期望低温下具有优良电学特性的超精细薄膜的技术,并且因此,在使用现有硅前体时,600或更高的高温工艺、阶梯覆盖的劣化、蚀刻特性以及薄膜的物理和电学特性成为问题,并且因此,需要开发优良的新硅前体。
发明内容
技术问题
本发明的一个目的是提供新三甲硅烷基胺衍生物。
另外,本发明的另一个目的是提供作为用于薄膜沉积的前体化合物的新三甲硅烷基胺衍生物。
此外,本发明的另一个目的是提供用于制备三甲硅烷基胺衍生物的方法。
另外,本发明的另一个目的是提供用于沉积含硅薄膜的组合物,其包含本发明的三甲硅烷基胺衍生物;用于制造含硅薄膜的方法;和通过使用本发明的三甲硅烷基胺衍生物制造的含硅薄膜。
技术方案
在一个一般方面中,本发明提供了这样的新三甲硅烷基胺衍生物:其能够形成具有优良内聚性、高沉积速率和即使在低温下也具有优良的物理和电学特性的硅薄膜。
本发明的新三甲硅烷基胺衍生物由以下化学式1表示:
[化学式1]
在化学式1中,
R1和R2各自独立地为氢、卤素或(C1-C3)烷基。
由本发明的化学式1表示的三甲硅烷基胺衍生物在室温和大气压下呈液态,并且具有较优的挥发性和优良的反应性,由此容易形成薄膜。
优选地,在化学式1中,排除其中R1和R2两者均为甲基的情况,原因是由于当化学式1中的R1和R2两者均为甲基时,三甲硅烷基胺衍生物在室温和大气压下呈液态,但仍然具有低反应性。同时,本发明的三甲硅烷基胺衍生物(排除其中R1和R2两者均为甲基的情况)是具有较优挥发性和优良反应性的液态化合物,由此容易形成薄膜。
另外,由于Si3N三角形平面分子结构具有三个连接至中心氮原子的硅原子,因此本发明的三甲硅烷基胺衍生物具有高的热稳定性和低的活化能,由此具有优良的反应性,并且不产生非挥发性副产物,由此容易形成具有高纯度的含硅薄膜。
为了使根据本发明的一个示例性实施方案的由化学式1表示的三甲硅烷基胺衍生物形成具有高热稳定性和反应性以及高纯度的薄膜,优选的是,在化学式1中,R1和R2各自独立地为氢、卤素或甲基,前提条件是排除其中R1和R2两者均为甲基的情况。
根据本发明的一个示例性实施方案的化学式1可以选自以下化合物,但本发明并不限于此:
另外,由本发明的化学式1表示的三甲硅烷基胺衍生物可以优选用作用于沉积含硅薄膜的前体化合物。
在另一个一般方面中,本发明提供了用于制备由化学式1表示的三甲硅烷基胺衍生物的方法,所述方法包括:通过在由以下化学式2表示的碱或(C1-C7)烷基锂的存在下使由以下化学式3表示的化合物与由以下化学式4表示的化合物反应制备由以下化学式1表示的三甲硅烷基胺衍生物。
[化学式1]
[化学式2]
N(R3)(R4)(R5)
[化学式3]
[化学式4]
在化学式1至4中,
R1和R2各自独立地为氢、卤素或(C1-C3)烷基;
R3至R5各自独立地为(C1-C7)烷基,并且
X1是卤素。
优选地,在化学式1至4中,排除其中R1和R2两者均为甲基的情况。
根据本发明的一个示例性实施方案的(C1-C7)烷基锂是锂与(C1-C7)烷基键合的化合物,例如,甲基锂、叔丁基锂、正丁基锂等,并且优选为正丁基锂。
在另一个一般方面中,本发明提供了用于制备由以下化学式1表示的三甲硅烷基胺衍生物的方法,所述方法包括:通过使金属氢化物与由以下化学式5表示的化合物反应制备由以下化学式1表示的三甲硅烷基胺衍生物:
[化学式1]
[化学式5]
在化学式1或5中,
R1和R2各自独立地为氢、卤素或(C1-C3)烷基;并且
X2或X3各自独立地为氢或卤素。
优选地,在化学式1或5中,排除其中R1和R2两者均为甲基的情况。
根据本发明的一个示例性实施方案,金属氢化物中的金属可以是碱金属或碱土金属,并且优选为锂。
只要本发明的制备方法中使用的溶剂不与起始物质反应,则其在一般有机溶剂中不受限制,例如,所述溶剂可以是选自正己烷(n-己烷)、环己烷、正戊烷(n-戊烷)、二乙醚、甲苯、四氢呋喃(THF)、二氯甲烷(DCM)和三氯甲烷(氯仿)中的至少一种。
只要本发明的制备方法中的反应温度用于一般有机合成,则所述温度不受限制;然而,反应温度可以根据反应时间、反应物质和起始物质的量变化,其中反应需要在通过NMR、GC等确认起始物质完全消耗之后完成。当反应完成时,可以通过过滤,随后通过在减压下简单蒸馏除去溶剂,并且然后可以通过一般方法如分馏、减压下蒸馏等来分离和精炼期望的物质。
此外,在另一个一般方面中,本发明提供了用于沉积含硅薄膜的组合物和用于通过使用上述三甲硅烷基胺衍生物制造含硅薄膜的方法,所述组合物包含上述三甲硅烷基胺衍生物。
本发明的用于沉积含硅薄膜的组合物可包含三甲硅烷基胺衍生物作为用于薄膜沉积的前体,并且用于沉积含硅薄膜的组合物中的三甲硅烷基胺衍生物的含量可以在本领域技术人员考虑到薄膜的成膜条件或者厚度、特性等可确定的范围内。
在另一个一般方面中,本发明提供了通过使用上述三甲硅烷基胺衍生物制造的含硅薄膜。
本发明的含硅薄膜可以由一般方法制造,例如,金属有机化学气相沉积(MOCVD)、原子层沉积(ALD)、低压化学气相沉积(LPCVD)、等离子体增强化学气相沉积(PECVD)、等离子体增强原子层沉积(PEALD)等。
本发明的三甲硅烷基胺衍生物具有低活化能和高反应性,并且使非挥发性副产物的产生最小化,使得通过使用本发明的三甲硅烷基胺衍生物作为前体制造的含硅薄膜可以具有高纯度和优良的物理和电学特性。
有益效果
本发明的三甲硅烷基胺衍生物具有优良的热稳定性和高反应性,使得通过使用所述三甲硅烷基胺衍生物作为前体制造的含硅薄膜可以具有高纯度和显著优良的物理和电学特性。
另外,本发明的三甲硅烷基胺衍生物可具有高含量的硅并且在室温和大气压下呈液态,由此容易储存和处理,并且可具有高挥发性和高反应性以迅速地和容易地沉积,并且可以沉积具有优良内聚性和较优的阶梯覆盖的薄膜。
此外,通过使用本发明的三甲硅烷基胺衍生物作为前体制造的含硅薄膜可以具有高纯度和显著优良的物理和电学特性。
附图说明
本发明的上述和其他目的、特征和优点将通过结合附图给出的优选实施方案的以下描述变得明显,其中:
图1示出了通过由实施例3制备的三甲硅烷基胺衍生物的热重分析所获得的结果。
图2示出了通过由实施例4制备的三甲硅烷基胺衍生物的热重分析所获得的结果。
图3示出了通过由实施例4制备的三甲硅烷基胺衍生物的蒸气压测量所获得的结果。
图4示出了由实施例4进行的用于沉积含硅薄膜的方法。
图5示出了通过使用椭圆偏光仪(横坐标:波数(cm-1))分析由实施例5制造的含硅薄膜的膜厚度所获得的结果。
图6示出了通过由实施例5制造的经沉积的含硅薄膜的红外光谱分析所获得的结果。
图7示出了由实施例6进行的用于沉积含硅薄膜的方法。
图8示出了通过由实施例6进行的含硅薄膜的红外光谱分析所获得的结果。
具体实施方式
下文中,将更详细地参考以下示例性实施方案对本发明进行描述。然而,以下示例性实施方案仅仅借助实施例描述本发明,但不限于此。
以下实施例的所有化合物在无水和惰性气氛下使用手套箱或Schlenk管进行操作,产品通过1H核磁共振(NMR,400MHz Ultrashield,Buruker)、热重分析(TGA,L81-II,LINSEIS)和气相色谱(GC,7890A,Agilent Technologies)分析,经沉积的薄膜的厚度通过椭圆偏光仪(M2000D,Woollam)测量,并且所述膜的组分通过红外光谱(IFS66V/S&Hyperion3000,Bruker Optiks)和俄歇电子光谱仪(Microlab 350,Thermo Electron)分析。
[实施例1]四甲基二硅氮烷的合成
将80g(0.84mol)氯代二甲基硅烷(CH3)2SiHCl和400ml正己烷放入1000ml火焰干燥的Schlenk烧瓶中并且在无水和惰性气氛下搅拌,并冷却至-30℃的温度。向其中缓慢添加72g(4.23mol)氨(NH3)同时将温度维持在-30℃。在添加完成之后,使反应溶液的温度缓慢升至室温,并且将反应溶液在室温下搅拌6小时。过滤反应溶液之后,除去通过过滤获得的白色铵盐(NH4Cl)固体以得到滤液,并且在减压下除去滤液中的溶剂以得到50.73g(0.38mol)的四甲基二硅氮烷(((CH3)2SiH)2NH),产率为90%。
1HNMR(C6D6中):δ0.09(d,12H,HN(HSi(CH3)2))2,4.66(m,2H,HN(HSi(CH3)2))2);
沸点99℃
[实施例2]双-四甲基甲硅烷基二氯甲硅烷基胺的合成
将40g(0.30mol)通过上述实施例1合成的四甲基二硅氮烷(((CH3)2SiH)2NH)和100ml有机溶剂(正己烷)放入2000ml火焰干燥的烧瓶中并且在无水和惰性气氛下搅拌,并且缓慢添加92.85g(0.30mol)2.29M正丁基锂(n-C4H9Li)己烷(C6H14)溶液同时将温度维持在-15℃。在添加完成之后,使反应溶液的温度缓慢升至室温,并且将反应溶液搅拌6小时,并向其中添加150ml四氢呋喃(O(C2H2)2)。向所述反应溶液中缓慢添加4.47g(0.33mol)三氯硅烷(SiHCl3)同时将温度维持在-20℃。在添加完成之后,使反应溶液的温度缓慢升至25℃,并将反应溶液搅拌8小时同时将温度维持在25℃。在反应完成之后,过滤反应混合物,并且除去通过过滤得到的白色固体以获得滤液,并且在减压下除去滤液中的溶剂以获得55.75g(0.24mol)双-四甲基甲硅烷基二氯甲硅烷基胺(((CH3)2HSi)2NSiHCl2),产率为80%。
1H-NMR(C6D6中):δ0.17(d,12H,((CH3)2HSi)2NSiHCl2)),4.64(m,2H,((CH3)2HSi)2NSiHCl2),6.09(s,1H,((CH3)2HSi)2NSiHCl2).
[实施例3]双-二甲基甲硅烷基甲硅烷基胺的合成
将55.7g(0.24mol)通过上述实施例2合成的双-四甲基甲硅烷基二氯甲硅烷基胺(((CH3)2HSi)2NSiHCl2)和200ml有机溶剂(THF)放入2000ml火焰干燥的烧瓶中并且在无水和惰性气氛下搅拌,并冷却至-15℃的温度。向其中缓慢添加4.77g(0.60mol)氢化锂(LiH)同时将温度维持在-15℃。在添加完成之后,使反应溶液的温度缓慢升至65℃并将反应溶液搅拌12小时。在过滤反应溶液之后,除去通过过滤得到的白色固体以获得滤液。通过减压蒸馏在减压下除去滤液中的溶剂以获得25.50g(0.16mol)双-二甲基甲硅烷基甲硅烷基胺(((CH3)2HSi)2NSiH3),产率为65%。
1H-NMR(C6D6中):δ0.16(d,12H,(((CH3)2HSi)2NSiH3)),4.49(s,3H,(((CH3)2HSi)2NSiH3)),4.69(m,2H,(((CH3)2HSi)2NSiH3));沸点115~120℃;GC分析结果>99%.
[实施例4]三-二甲基甲硅烷基胺的合成
将40g(0.30mol)通过上述实施例1合成的四甲基二硅氮烷(((CH3)2SiH)2NH)和100ml有机溶剂(正己烷)放入2000ml火焰干燥的烧瓶中并且在无水和惰性气氛下搅拌,并缓慢添加92.85g(0.30mol)2.29M正丁基锂(n-C4H9Li)己烷(C6H14)溶液同时将温度维持在-15℃。在添加完成之后,使反应溶液的温度缓慢升至室温,并且将反应溶液搅拌6小时,并且向其中添加150ml四氢呋喃(O(C2H2)2)。向所述反应溶液中缓慢添加31.22g(0.33mol)氯代二甲基硅烷((CH3)2SiHCl)同时将温度维持在-20℃。在添加完成之后,将反应溶液的温度缓慢升至25℃并且将反应溶液搅拌8小时同时将温度维持在25℃。在反应完成之后,过滤反应混合物,并且除去通过过滤得到的白色固体以获得滤液,并且在减压下除去滤液中的溶剂以获得45.96g(0.24mol)三-二甲基甲硅烷基胺(((CH3)2HSi)3N),产率为80%。
1H-NMR(C6D6中):δ0.21(d,18H,(((CH3)2HSi)3N),4.73(s,3H,(((CH3)2HSi)3N);2);沸点152℃;GC分析结果>99.5%.
[实施例5]通过等离子体增强原子层沉积(PEALD)使用三甲硅烷基胺衍生物沉积二氧化硅膜
在一般等离子体增强原子层沉积(PEALD)设备中使用已知PEALD方法通过使用根据本发明的实施例3和4的三甲硅烷基胺衍生物作为用于形成二氧化硅膜的组合物进行成膜评估。使用硅基底作为基底,使用具有等离子体的氧作为反应气体,并且使用作为惰性气体的氩气用于清除。下文中,图4和表1特别地示出用于沉积二氧化硅薄膜的方法。
表1
[表1]
二氧化硅薄膜的沉积条件
经沉积的薄膜的厚度通过椭圆偏光仪进行测量,并且SiO2薄膜的形成通过红外光谱仪进行分析。图5示出了通过椭圆偏光仪分析所得的膜的厚度。确认了通过使用双-二甲基甲硅烷基甲硅烷基胺化合物沉积的薄膜的厚度为并且通过使用三-二甲基甲硅烷基胺化合物沉积的薄膜的厚度为确定了这些薄膜能够有效地用于需要高沉积速率的所有二氧化硅薄膜应用领域中。图6示出了经沉积的薄膜的红外光谱分析。示出了所有薄膜作为二氧化硅薄膜形成,并且没有观察到杂质峰,如C-H、Si-OH。
也就是说,确认了通过本发明制备的新三甲硅烷基胺衍生物在通过等离子体增强原子层沉积(PEALD)形成具有高沉积速率的高纯度二氧化硅薄膜中具有高的实用价值。
[比较例]通过等离子体增强原子层沉积(PEALD)使用已知的三甲硅烷基胺衍生物沉积二氧化硅膜
在与上述实施例5所操作的相同的沉积条件下通过使用已知的PEALD方法进行比较例的成膜评估,不同之处在于使用以下表2中所示的已知的三甲硅烷基胺衍生物,然后,通过与上述实施例5所操作的相同的分析方法和条件分析经沉积的薄膜,并且获得其分析结果。下文中,图4和表2特别地示出了用于沉积二氧化硅薄膜的方法。
显示出薄膜的厚度范围为至这示出了与实施例3和4的三甲硅烷基胺衍生物相比较低的沉积速率,并且所有薄膜作为二氧化硅膜形成。
表2
[表2]
二氧化硅薄膜的沉积条件
[实施例6]通过等离子体增强原子层沉积(PEALD)使用三甲硅烷基胺衍生物沉积氮化硅膜
在一般等离子体增强原子层沉积(PEALD)设备中使用已知PEALD方法通过使用根据本发明的实施例3的三甲硅烷基胺衍生物作为用于形成氮化硅膜的组合物进行成膜评估。使用硅基底作为基底,使用具有等离子体的氮作为反应气体,并且使用相同的氮气用于清除。下文中,图7和表3特别地示出了用于使氮化硅薄膜沉积的方法。
表3
[表3]
氮化硅薄膜的沉积条件
经沉积的薄膜的厚度通过椭圆偏光仪进行测量,并且SiN薄膜的形成和薄膜的组分通过红外光谱仪和俄歇电子光谱仪进行分析。在平板晶片上的500次循环中,薄膜的厚度为
另外,如图8所示,示出了所有经沉积的薄膜作为氮化硅膜形成,并且观察到包含少量的例如N-H、Si-H的键。
另外,经沉积的薄膜的蚀刻速率通过使用缓冲氧化物蚀刻剂(BOE)溶液(300:1)进行确定。经沉积的氮化硅薄膜以/秒的速率被蚀刻,而作为比较样品的通过在1000℃下的热解沉积方法沉积的二氧化硅薄膜(热氧化物)以/秒的速率被蚀刻,并且使用二氯硅烷通过在770℃下的低压化学气相沉积(LPCVD)所沉积的氮化硅薄膜以/秒的速率被蚀刻。
也就是说,确认了通过本发明制备的新三甲硅烷基胺衍生物在通过等离子体增强原子层沉积(PEALD)形成具有高沉积速率和优良抗蚀刻性的高纯度氮化硅薄膜中具有高的实用价值。
Claims (3)
1.一种由以下化学式1表示的三甲硅烷基胺衍生物:
[化学式1]
在化学式1中,
R1和R2各自独立地为氢、卤素或C1-C3烷基。
2.根据权利要求1所述的三甲硅烷基胺衍生物,其中R1和R2两者为氢、卤素或甲基。
3.根据权利要求1所述的三甲硅烷基胺衍生物,其中所述化学式1选自以下化合物
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