WO2017011706A1 - Applications, procédés et systèmes pour un réseau adressable de distribution laser - Google Patents

Applications, procédés et systèmes pour un réseau adressable de distribution laser Download PDF

Info

Publication number
WO2017011706A1
WO2017011706A1 PCT/US2016/042363 US2016042363W WO2017011706A1 WO 2017011706 A1 WO2017011706 A1 WO 2017011706A1 US 2016042363 W US2016042363 W US 2016042363W WO 2017011706 A1 WO2017011706 A1 WO 2017011706A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser
laser beam
brightness
combined
beams
Prior art date
Application number
PCT/US2016/042363
Other languages
English (en)
Inventor
Mark Zediker
Matthew SILVA SA
Jean Michel Pelaprat
David Hill
Mathew Finuf
Original Assignee
Nuburu, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuburu, Inc. filed Critical Nuburu, Inc.
Priority to RU2018105599A priority Critical patent/RU2719337C2/ru
Priority to KR1020227006597A priority patent/KR102513216B1/ko
Priority to CA2992464A priority patent/CA2992464A1/fr
Priority to KR1020237009474A priority patent/KR20230042412A/ko
Priority to JP2018501225A priority patent/JP2018530768A/ja
Priority to KR1020187003763A priority patent/KR102370083B1/ko
Priority to CN201680041725.2A priority patent/CN107851970B/zh
Priority to EP16825215.3A priority patent/EP3323179A4/fr
Publication of WO2017011706A1 publication Critical patent/WO2017011706A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0905—Dividing and/or superposing multiple light beams
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
    • G02B27/0922—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers the semiconductor light source comprising an array of light emitters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0977—Reflective elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/108—Beam splitting or combining systems for sampling a portion of a beam or combining a small beam in a larger one, e.g. wherein the area ratio or power ratio of the divided beams significantly differs from unity, without spectral selectivity
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/04—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
    • H01S3/302—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects in an optical fibre
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating
    • G02B6/02042—Multicore optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H01S5/405—Two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/25—Process efficiency

Definitions

  • the present inventions relate to array assemblies for combining laser beams; and in particular array assemblies that can provide high brightness laser beams for use in systems and applications in manufacturing, fabricating, entertainment, graphics, imaging, analysis, monitoring, assembling, dental and medical fields.
  • lasers and in particular semiconductor lasers, such as laser diodes, provide laser beams having highly desirable wavelengths and beam quality, including brightness. These lasers can have wavelengths in the visible range, UV range, IR range and combinations of these, as well as, higher and lower wavelengths.
  • semiconductor lasers as well as other laser sources, e.g., fiber lasers, is rapidly evolving with new laser sources being continuously developed and providing existing and new laser wavelengths. While having desirable beam qualities, many of these lasers have lower laser powers than are desirable, or needed for particular applications. Thus, these lower powers have prevented these laser sources from finding greater utility and commercial applications.
  • blue laser beams should be given their broadest meaning, and in general refer to systems that provide laser beams, laser beams, laser sources, e.g., lasers and diodes lasers, that provide, e.g., propagate, a laser beam, or light having a wavelength from about 400 nm to about 500 nm.
  • a laser system for performing laser operations having: a plurality of laser diode assemblies; each laser diode assembly having a plurality of laser diodes capable of producing an individual blue laser beam along a laser beam path; a means for spatially combining the individual blue laser beams to make a combined laser beam having a single spot in the far-field that is capable of being coupled into a optical fiber for delivery to a target material; and, the means for spatially combining the individual blue laser beams on the laser beam path and in optical association with each laser diode.
  • the methods and systems having one or more of the following features: having at least three laser diode assemblies; and each laser diode assembly having at least 30 laser diodes; wherein the laser diode assemblies are capable of of propagating laser beams having a total power of at least about 30 Watts, and a beam parameter property of less than 20 mm mrad; wherein the beam parameter property is less than 15 mm mrad; wherein the beam parameter property is less than 10 mm mrad; wherein the means for spatially combining produces a combined laser beam N times the brightness of the individual laser beam; wherein N is the number of laser diodes in the laser diode assembly; wherein the means for spatially combining increases the power of the laser beam while preserving the brightness of the combined laser beam; whereby the combined laser beam has a power that is at least 50x the power of the individual laser beam and whereby a beam parameter product of the combined laser beam is no greater than 2 times a beam parameter product of an individual laser beam; whereby the beam parameter product
  • a laser system for providing a high brightness, high power laser beam, the system having: a plurality of laser diode assemblies; each laser diode assembly having a plurality of laser diodes capable of producing a blue laser beam having an initial brightness; a means for spatially combining the blue laser beams to make a combined laser beam having a final brightness and forming a single spot in the far-field that is capable of being coupled into a optical fiber; wherein each laser diode is locked by an external cavity to a different wavelength to substantially increase the brightness of the combined laser beam, whereby the final brightness of the combined laser beam is about the same as the initial brightness of the laser beams from the laser diode.
  • each laser diode is locked to a single wavelength using an external cavity based on a grating and each of the laser diode assembly are combined into a combined beam using a combining means selected from the group consisting of a narrowly spaced optical filter and a grating;
  • the Raman convertor is an optical fiber that has a pure fused silica core to create a higher brightness source and a fluorinated outer core to contain the blue pump light;
  • the Raman convertor is used to pump a Raman convertor such as an optical fiber that has a Ge0 2 doped central core with an outer core to create a higher brightness source and an outer core that is larger than the central core to contain the blue pump light;
  • the Raman convertor is an optical fiber that has a P2O5 doped core to create a higher brightness source and an outer core that is larger than the central core to contain the blue pump light; wherein the Raman convertor an optical fiber that has a graded index core to create a higher brightness source and an outer core that is larger than the central core to contain the blue pump light; wherein the Raman convertor is a graded index Ge0 2 doped core and an outer step index core; wherein the Raman convertor is used to pump a Raman convertor fiber that is a graded index P2O5 doped core and an outer step index core; wherein the Raman convertor is used to pump a Raman convertor fiber that is a graded index Ge0 2 doped core; wherein the Raman convertor is a graded index P2O5 doped core and an outer step index core; wherein the Raman convertor is a diamond to create a higher brightness laser source; wherein the Raman convertor is a KGW to create a higher brightness laser source;
  • a laser system for performing laser operations having: a plurality of laser diode assemblies; each laser diode assembly having a plurality of laser diodes capable of producing a blue laser beam along a laser beam path; a means for spatially combining the blue laser beams to make a combined laser beam having a single spot in the far-field that is capable of being optically coupled to a Raman convertor, to pump the Raman converter, to increase the brightness of the combined laser beam.
  • a method of providing a combined laser beam having operation an array of Raman converted lasers to generate blue laser beams at individual different wavelengths and combined the laser beams to create a higher power source while preserving the spatial brightness of the original source.
  • a laser system for performing laser operations having: a plurality of laser diode assemblies; each laser diode assembly having a plurality of laser diodes capable of producing a blue laser beam along a laser beam path; beam collimating and combining optics along the laser beam path, wherein a combined laser beam is capable of being provided; and an optical fiber for receiving the combined laser beam.
  • the optical fiber is in optical communication with a rare-earth doped fiber, whereby the combined laser beam is capable of pumping the rare-earth doped fiber to create a higher brightness laser source; and, wherein the optical fiber is in optical communication with an outer core of a brightness convertor, whereby the combined laser beam is capable of pumping the outer core of a brightness convertor to create a higher ratio of brightness enhancement.
  • a Raman fiber having: dual cores, wherein one of the dual cores is a high brightness central core; and, a means to suppress a second order Raman signal in the high brightness central core selected from the group consisting of a filter, a fiber bragg grating, a difference in V number for the first order and second order Raman signals, and a difference in micro-bend losses.
  • a second harmonic generation system having: a Raman convertor at a first wavelength to generate light at half the wavelength of the first wavelength; and an externally resonant doubling crystal configured to prevent the half wavelength light from propagating through the optical fiber.
  • the methods and systems having one or more of the following features: wherein the first wave length is about 460 nm; and the externally resonant doubling crystal is KTP; and, wherein the Raman convertor has a non-circular outer core structured to improve Raman conversion efficiency.
  • a third harmonic generation system having: a Raman convertor at a first wavelength to generate light at a second lower wavelength than the first wavelength; and an externally resonant doubling crystal configured to prevent the lower wavelength light from propagating through the optical fiber.
  • a fourth harmonic generation system having: a Raman convertor to generate light at 57.5 nm using an externally resonant doubling crystal configured to prevent the 57.5 nm wavelength light from propagating through the optical fiber.
  • a second harmonic generation system having a rare-earth doped brightness convertor having Thulium that lases at 473 nm when pumped by an array of blue laser diodes at 450 nm, to generate light at half the wavelength of the source laser or 236.5 nm using an externally resonant doubling crystal but does not allow the short wavelength light to propagate through the optical fiber.
  • a third harmonic generation system having a rare-earth doped brightness convertor, having Thulium that lases at 473 nm when pumped by an array of blue laser diodes at 450 nm to generate light at 1 18.25 nm using an externally resonant doubling crystal but does not allow the short wavelength light to propagate through the optical fiber.
  • a fourth harmonic generation system having a rare-earth doped brightness convertor, having Thulium that lases at 473 nm when pumped by an array of blue laser diodes at 450 nm to generate light at 59.1 nm using an externally resonant doubling crystal but does not allow the short wavelength light to propagate through the optical fiber.
  • a laser system for performing laser operations having: at least three of laser diode assemblies; each of the at least laser diode assemblies has at least ten laser diodes, wherein each of the at least ten laser diodes is capable of producing a blue laser beam, having a power of at least about 2 Watts and a beam parameter product of less than 8 mm-mrad, along a laser beam path, wherein each laser beam path is essentially parallel, whereby a space is defined between the laser beams traveling along the laser beam paths; a means for spatially combining and preserving brightness of the blue laser beams positioned on all of the at least thirty laser beam paths, the means for spatially combining and preserving brightness having a collimating optic for a first axis of a laser beam, a vertical prism array for a second axis of the laser beam, and a telescope; whereby the means for spatially combining and preserving fills in the space between the laser beams with laser energy, thereby providing a
  • an addressable array laser processing system having: at least three laser systems of the type presently described; each of the at least three laser systems configured to couple each of their combined laser beams into a single optical fiber; whereby each of the at least the three combined laser beams being capable of being transmitted along its coupled optical fiber; the at least three optical fibers in optical association with a laser head; and a control system; wherein the control system has a program having a predetermined sequence for delivering each of the combined laser beams at a predetermined position on a target material.
  • the fibers in the laser head are configured in an arrangement selected from the group consisting of linear, non-linear, circular, rhomboid, square, triangular, and hexagonal; wherein the fibers in the laser head are configured in an arrangement selected from the group consisting of 2x5, 5x2, 4x5, at least 5 x at least 5, 10x5, 5x10 and 3x4; wherein the target material has a powder bed; and, having: an x-y motion system, capable of transporting the laser head across a powder bed, thereby melting and fusing the powder bed; and a powder delivery system positioned behind the laser source to provide a fresh powder layer behind the fused layer; having: a z-motion system, capable of transporting the laser head to increment and decrement a height of the laser head above a surface of the powder bed; having
  • a method of providing a combined blue laser beam having high brightness having: operating a plurality of Raman converted lasers to provide a plurality of individual blue laser beams and combining the individual blue laser beams to create a higher power source while preserving the spatial brightness of the original source; wherein the individual laser beams of the plurality have different wavelengths.
  • a method of laser processing a target material having: operating an addressable array laser processing system having at least three laser systems of the type of the presently described systems to generate three individual combined laser beams into three individual optical fibers; transmitting each combined laser beams along its optical fiber to a laser head; and directing the three individual combined laser beams from the laser head in a
  • FIG. 1 is a graph showing laser performance of embodiments in accordance with the present inventions.
  • FIG. 2A is a schematic of a laser diode and axis focusing lens in accordance with the present inventions.
  • FIG. 2B is a schematic of an embodiment of a laser diode spot after fast and slow axis focusing in accordance with the present inventions.
  • FIG. 2C is a prospective view of an embodiment of a laser diode assembly in accordance with the present inventions.
  • FIG. 2D is a prospective view of an embodiment of a laser diode module in accordance with the present inventions.
  • FIG. 2E is a partial view of the embodiment of FIG. 2C showing laser beams, laser beam paths and space between the laser beams in accordance with the present inventions.
  • FIG. 2F is a cross sectional view of the laser beams, laser beam paths and space between the laser beams of FIG. 2E.
  • FIG. 2G is a prospective view of an embodiment of laser beams, beam paths and optics in accordance with the present inventions.
  • FIG. 2H is a view of the combined laser diode beams after the patterned mirrors in accordance with the present invention.
  • FIG. 2I is a view of the laser diode beams after the beam folder with an even split of the beams in accordance with the present invention.
  • FIG. 2J is a view of a laser diode beams after the beam folder with a 3- 2 column split in accordance with the present invention.
  • FIG. 3 is a schematic illustrating an embodiment of scanning of an embodiment of a laser diode array on a starting or target material in accordance with the present inventions.
  • FIG. 4 is a table providing processing parameters in accordance with the present inventions.
  • FIG. 5 is a schematic of an embodiment of a laser array system and process in accordance with the present inventions.
  • FIG. 6 is a schematic of an embodiment of a laser array system and process in accordance with the present inventions.
  • FIG. 7 is a schematic of an embodiment of a laser array system and process in accordance with the present inventions.
  • FIG. 8 is a schematic of an embodiment of a laser fiber bundle arrangement for use in an embodiment of a laser array system in accordance with the present inventions.
  • FIG. 9 is a schematic of an embodiment of a laser fiber bundle arrangement for use in an embodiment of a laser array system in accordance with the present inventions.
  • FIG. 10 is a schematic of an embodiment of a laser fiber bundle arrangement for use in an embodiment of a laser array system in accordance with the present inventions.
  • FIG. 1 1 is a schematic of an embodiment of a laser fiber bundle arrangement for use in an embodiment of a laser array system in accordance with the present inventions.
  • FIG. 12 is a schematic of an embodiment of a laser fiber bundle arrangement for use in an embodiment of a laser array system in accordance with the present inventions.
  • FIG. 13 is a schematic of an embodiment of a laser fiber bundle arrangement for use in an embodiment of a laser array system in accordance with the present inventions.
  • FIG. 14A is a schematic of an embodiment of a laser fiber bundle arrangement for use in an embodiment of a laser array system in accordance with the present inventions.
  • FIG. 14B is a schematic of an embodiment of a laser fiber bundle arrangement for use in an embodiment of a laser array system in accordance with the present inventions.
  • FIG. 14C is a schematic of an embodiment of a laser fiber bundle arrangement for use in an embodiment of a laser array system in accordance with the present inventions.
  • FIG. 15A is a schematic of an embodiment of a laser fiber bundle arrangement for use in an embodiment of a laser array system in accordance with the present inventions.
  • FIG. 15B is a schematic of an embodiment of a laser fiber bundle arrangement for use in an embodiment of a laser array system in accordance with the present inventions.
  • FIG. 16A is a schematic of an embodiment of a laser fiber bundle arrangement for use in an embodiment of a laser array system in accordance with the present inventions.
  • FIG. 16B is a schematic of an embodiment of a laser fiber bundle arrangement for use in an embodiment of a laser array system in accordance with the present inventions.
  • FIG. 16C is a schematic of an embodiment of a laser fiber bundle arrangement for use in an embodiment of a laser array system in accordance with the present inventions.
  • FIG. 16D is a schematic of an embodiment of a laser fiber bundle arrangement for use in an embodiment of a laser array system in accordance with the present inventions.
  • the present inventions relate to the combining of laser beams, systems for making these combinations and processes utilizing the combined beams.
  • the present inventions relate to arrays, assemblies and devices for combining laser beams from several laser beam sources into one or more combined laser beams. These combined laser beams preferably have preserved, enhanced, and both, various aspects and properties of the laser beams from the individual sources.
  • Embodiments of the present array assemblies and the combined laser beams that they provide can find wide-ranging applicability.
  • Embodiments of the present array assemblies are compact and durable.
  • the present array assemblies have applicability in: welding, additive manufacturing, including 3-D printing; additive manufacturing - milling systems, e.g., additive and subtractive manufacturing;
  • embodiments of the present inventions include array assemblies for combining laser beam from various laser beam sources, such as solid state lasers, fiber lasers, semiconductor lasers, as well as other types of lasers and combinations and variations of these.
  • Embodiments of the present invention include the combining of laser beams across all wavelengths, for example laser beams having wavelengths from about 380 nm to 800 nm (e.g., visible light), from about 400 nm to about 880 nm, from about 100 nm to about 400 nm, from 700 nm to 1 mm, and combinations, variations of particular wavelengths within these various ranges.
  • Embodiments of the present arrays may also find application in microwave coherent radiation (e.g., wavelength greater than about 1 mm).
  • Embodiments of the present arrays can combine beams from one, two, three, tens, or hundreds of laser sources. These laser beams can have from a few mil watts, to watts, to kilowatts.
  • An embodiment of the present invention consists of an array of blue laser diodes that are combined in a configuration to preferably create a high brightness laser source.
  • This high brightness laser source may be used directly to process materials, i.e. marking, cutting, welding, brazing, heat treating, annealing.
  • the materials to be processed e.g., starting materials or target materials, can include any material or component or composition, and for example, can include semiconductor components such as but not limited to TFTs (thin film transistors), 3-D printing starting materials, metals including gold, silver, platinum, aluminum and copper, plastics, tissue, and semiconductor wafers to name a few.
  • the direct processing may include, for example, the ablation of gold from electronics, projection displays, and laser light shows, to name a few.
  • Embodiments of the present high brightness laser sources may also be used to pump a Raman laser or an Anti-Stokes laser.
  • the Raman medium may be a fiber optic, or a crystal such as diamond, KGW (potassium gadolinium tungstate, KGd(W0 4 )2), YV0 4 , and Ba(NOs)2.
  • the high brightness laser sources are blue laser diode sources, which are a semiconductor device operating in the wavelength range of 400 nm to 500 nm.
  • the Raman medium is a brightness convertor and is capable of increasing the brightness of the blue laser diode sources.
  • the brightness enhancement may extend all the way to creating a single mode, diffraction limited source, i.e., beam having an M 2 of about 1 and 1 ,5 with beam parameter products of less than 1 , less than 0.7, less than 0.5, less than 0.2 and less than 0.13 mm-mrad depending upon wavelength.
  • n or “N” e.g., two, three, four, etc., tens, hundreds, or more
  • laser diode sources can be configured in a bundle of optical fibers that enables an addressable light source that can be used to mark, melt, weld, ablate, anneal, heat treat, cut materials, and combinations and variations of these, to name a few laser operations and procedures.
  • FIG. 1 shows a table 100 for the laser
  • Line 104 plots the performance of the brightness converting technology when using dense wavelength combining of the outputs of the brightness convertor. This allows the combined beam to remain a single spatial mode or a near single spatial mode as the power level is scaled.
  • the dense wavelength combining uses gratings to control the wavelength of each individual brightness converted laser, followed by gratings to combing the beams into a single beam.
  • the gratings can be ruled gratings, holographic gratings, Fiber Bragg Gratings (FBG), or Volume Bragg Gratings (VBG). It is also feasible to use a prism, although the preferred embodiment is to use the gratings.
  • FIG. 2A is a schematic of a laser diode 200 that is propagating a laser beam along a laser beam path to a Fast Axis Collimating lens 201 (FAC).
  • FAC Fast Axis Collimating lens
  • a 1.1 , 1 .2, 1 .5, 2 or even 4 mm, cylindrical aspheric lens is used to capture the fast axis power and create a diffraction limited beam in the fast axis with the correct height to preserve the brightness and allow a combination of the beams further down the optical chain.
  • the collimating lens 202 is for collimating the slow axis of the laser diode (the axis with the smaller divergence angle, typically the x axis).
  • a 15, 16, 17, 18 or 21 mm focal length cylindrical aspheric lens captures the slow axis power and collimates the slow axis to preserve the brightness of the laser source.
  • the focal length of the slow axis collimator results in an optimized combination of the laser beamlets by the optical system into the target fiber diameter.
  • both a slow axis and a fast axis collimating lens are located along each of the laser beam paths and are used to shape the individual laser beams.
  • FIG. 2B is a schematic of a laser beam spot 203 that was formed by the laser beam from a laser diode passing through both a fast and slow axis focusing lens. This simulation takes into account the maximum divergence of the source across the complete aperture of the source. It being understood that many different shaped laser beam spots can be created, such as a square, rectangle, circle, oval, linear and combinations and variations of these and other shapes. For example, the combined laser beam creates a spot 203, with blue laser light, focused to a spot size of 100 ⁇ with 100 mm focal length lens, at an NA of 0.18. [0070] Turning to FIGS.
  • a laser diode subassembly 210 e.g., diode module, bar, plate, multi-die package
  • a laser diode module 220 having four laser diode assemblies 210, 210a, 210b, 210c.
  • FIG. 2E there is shown a detailed view showing portions of some of the laser beams 250a, 251 a, 252a, along their respective laser beam paths 250, 251 , 252.
  • FIG. 2F is a cross sectional view of the laser beams of FIG. 2E, showing the open space horizontal 260 and vertical 261 (based upon the orientation of the figure).
  • the beam combining optics closes the beams spatially together, to eliminate the open spaces, e.g., 260, 261 , in the final spot 203 (FIG. 2B).
  • the laser diode module 220 is capable of producing a combined laser beam, preferably a combined blue laser beam, having the performance of the curve 101 of FIG. 1 .
  • the laser diode assembly 210 has a baseplate 21 1 , which is a thermally conductive material, e.g., copper, that has power leads (e.g., wires) e.g., 212, entering to provide electrical power to the diodes, e.g., 213.
  • power leads e.g., wires
  • the diodes e.g., 213.
  • Each diode may have a plane parallel plate for translating the position of the beam in the slow axis, e.g., 214 when using a single slow axis collimating (SAC) lens across multiple rows, e.g., 216.
  • SAC slow axis collimating
  • the plane parallel plate is not necessary when using individual slow axis lenses for each laser diode, which is the preferred embodiment.
  • the plane parallel plates correct the position of the laser beam path in the slow axis as it propagates from each of the individual laser diodes, which may be a result of the assembly process.
  • the plane parallel plates are not required if individual FAC / SAC lens pairs are used for each laser diode.
  • the SAC position compensates for any assembly errors in the package.
  • the result of both of these approaches is to align the beamlets to be parallel when either using individual lens pairs (FAC/SAC) or a shared SAC lens after individual FAC / plane parallel plates, providing parallel and spaced laser beams, e.g., 251 a, 252a, 250a, and beam paths, e.g., 251 , 252, 250.
  • 210a, 210b, 210c propagate to a patterned mirror, e.g., 225, which is used to redirect and combine the beams from the four laser diode subassemblies into a single beam, as shown in FIG. 2G .
  • the four rows of collimate laser diodes are interlaced with the four rows of the other three packages creating the composite beam.
  • Figure 2H shows the position of the beams, e.g., 230, from laser subassembly 210.
  • An aperture stop 235 clips off any unwanted scattered light from the combined beamlets, which reduces the heat load on the fiber input face.
  • a polarization beam folding assembly 227 folds the beam in half in the slow axis to double the brightness of the composite laser diode beam FIG.
  • the beam can be folded either by splitting the central emitter in the center resulting the pattern shown in Figure 2I, where beam 231 is the overlay of two beamlets in the slow axis direction by polarization, and beam 232 is the split beamlet which does not overlay any other emitters. If the beam is split in between the 2 nd and 3 rd beamlet ( Figure 2J), then the beam folder is more efficient and two of the columns of beams, e.g., 233 are overlapped, while the third column of beams, e.g, 234 simply passes straight through.
  • the telescope assembly 228 either expands the combined laser beams in the slow axis or compresses the fast axis to enable the use of a smaller lens.
  • the telescope 228 shown in this example expands the beam by a factor of 2.6x, increasing its size from 1 1 mm to 28.6 mm while reducing the divergence of the slow axis by the same factor of 2.6x. If the telescope assembly compresses the fast axis then it would be a 2x telescope to reduce the fast axis from 22 mm height (total composite beam) to 1 1 mm height giving a composite beam that is 1 1 mm x 1 1 mm. This is the preferred embodiment, because of the lower cost.
  • An aspheric lens 229 focuses the composite beam into an optical fiber 245 that is at least 50, 100, 150, or 200 ⁇ in diameter.
  • the fiber output of multiple laser diode modules 220 are combined with a fiber combiner to produce higher output power level lasers according to Figure 1 (line 101 ).
  • the laser diode modules are combined using an optical combination method where the aspheric lens 229 and fiber combiner 240 are replaced with a set of shearing mirrors that then couple into an aspheric lens and the composite beam launched into the end of an optical fiber. In this manner one, two, three, tens, and hundreds of laser diode modules can be optically associated and their laser beams combined. In this manner combined laser beams can themselves be further, or additionally, combined to form a multiple-combined laser beam.
  • the configuration makes it feasible to launch, for example, up to 200 Watts of laser beam power into a single 50, 100, 150, or 200 ⁇ core optical fiber.
  • This embodiment of FiGS. 2C and 2D shows typical components to make, for example, a 200 W diode array assembly, e.g. a 200 W combined module, which uses up to four 50 Watt individual diode assemblies, e.g., 50 Watt modules.
  • FIGS 2C and 2D minimizes the electrical connections from the power supply to the laser diodes.
  • the individual modules, the combined modules, and both can be configured to provide a single combined laser beam or multiple combined laser beams, e.g., two, three, four, tens, hundreds or more. These laser beams can each be launched in a single fiber, or they can be further combined to be launched into fewer fibers.
  • 12 combined laser beams can be launched into 12 fibers, or the 12 beams can be combined and launched into fewer than 12 fibers, e.g., 10, 8, 6, 4 or 3 fibers. It should be understood that this combining can be of different power beams, to either balance or unbalance the power distribution between individual fibers; and can be of beams having different or the same wavelengths.
  • the brightness of an array of laser diodes can be improved by operating each array at a different wavelength and then combining them with either a grating or series of narrow band dichroic filters.
  • the brightness scaling of this technology is shown in FIG. 1 as the near straight line 102.
  • the starting point is the same brightness as can be achieved by a single module, since each module will be spatially overlapped on the previous modules in a linear fashion, the fiber diameter does not change, but the power launched does result in a higher brightness from the wavelength beam combined modules.
  • an array of blue laser diodes can be converted to near single mode or single mode output with the help of a brightness convertor.
  • the brightness convertor can be an optical fiber, a crystal or a gas.
  • the conversion process proceeds via Stimulated Raman Scattering which is achieved by launching the output from an array of blue laser diodes into an optical fiber or crystal or gas with a resonator cavity.
  • the blue laser diode power is converted via Stimulated Raman Scattering to gain and the laser resonator oscillates on the first Stokes Raman line, which is offset from the pump wavelength by the Stokes shift.
  • the brightness of a blue laser source can be further increased by combining the outputs of the brightness converted sources.
  • the performance of this type of embodiment is shown by line 104 of FIG. 1 .
  • the brightness is defined by the starting module at 0.3 mm-mrad.
  • the gain-bandwidth of the Raman line is substantially broader than that of the laser diodes, so more lasers can be combined via wavelength than for the laser diode technology alone.
  • the result is a 4 kW laser with a brightness the same as the 200 W laser, or 0.3 mm-mrad. This is indicated on FIG. 1 by the flat line 104.
  • the technology of the present inventions described in this specification can be used to configure a laser system for a wide range of applications ranging from welding, cutting, brazing, heat treating, sculpting, shaping, forming, joining, annealing and ablating, and combinations of these and various other material processing operations. While the preferred laser sources are relatively high brightness, the present inventions provide for the ability to configure systems to meet lower brightness requirements. Furthermore, groups of these lasers can be combined into a long line, which can be used to perform laser operations on larger areas of target materials, such as for example, annealing large area semiconductor devices such as the TFT's of a flat panel display.
  • the output of either the laser diodes, laser diode arrays, wavelength combined laser diode arrays, brightness converted laser diode arrays and wavelength combined laser diode arrays can be used to create a unique individually addressable printing machine. Since the laser power from each module is sufficient to melt and fuse plastic, as well as, metal powders, these sources are ideal for the additive
  • the present laser additive manufacturing system is combined with traditional removing manufacturing technologies, such as CNC machines, or other types of milling machines, as well as laser removal or ablation). Because of their, capability to provide small spot sizes, precision, and other factors, the present systems and laser
  • An array of lasers that are individually connected can be imaged onto the powder surface to create an object at n times the speed of a single scanned laser source. The speed can be further increased by using a higher power laser for each of the n-spots.
  • a near diffraction limited spot can be achieved for each of the n-spots, thus making it feasible to create higher resolution parts because of the sub-micron nature of the individual spot formed with a blue high brightness laser source.
  • This smaller spot size of the present configurations and systems provides a substantial improvement in the processing speed and the resolution of the printing process, compared to prior art 3- D printing technology.
  • embodiments of the present systems can continuously print layer after layer at a speeds in excess of 100x the print speeds of prior art additive manufacturing machines.
  • the system can continuously print without having to stop to apply or level the powder required for the next layer.
  • FIG. 3 there is a schematic of a laser process with a laser system having two rows of staggered spots, e.g., 303a and spots, e.g., 303b.
  • the laser spots, e.g., 303a, 303b are moved, e.g., scanned, in the direction of arrow 301 across the target material.
  • the target material could be in a power form 302, which is then melted buy the laser spots 304 and then solidifies, generally along transition line 305, to form as a fused material 306.
  • the powers of the beam, the firing time of the beams, the speed of movement and the combinations of these, can be varied in a predetermined manner resulting in a predetermined shape of the melt transition line 305.
  • the distance the beam can be staggered can be 0, 0.1 , 0.5, 1 , 2 mm apart as needed by the fixturing required to hold the fibers and their optical components.
  • the stagger may also be a monotonically increasing or decreasing position at a set stagger step-size or a varying step-size. The exact speed advantage will depend on the target material and configuration of the parts to be manufactured.
  • FIG 4 summarizes the performance than can achieved for embodiments of the laser systems and configurations, such as those depicted in FIGS. 5-7 for a 20 beam system, the speed increases with each additional beam that is added to the system.
  • FIG. 5 there is provided a schematic of an embodiment of a laser system with an addressable laser delivery configuration.
  • the system has an addressable laser diode system 501.
  • the system 501 provides independently addressable laser beams to a plurality of fibers 502a, 502b, 502c (greater and lower numbers of fibers and laser beams are contemplated).
  • the fibers 502a, 502b, 502c are combined into a fiber bundle 504 that is contained in protective tube 503, or cover.
  • the fibers 502a, 502b, 502c in fiber bundle 504 are fused together to form a printing head 505 that includes an optics assembly 506 that focuses and directs the laser beams, along beam paths, to a target material 507.
  • the print head and the powder hoppers move together with the movement of the print head being in the positive direction according to 510. Additional material 509 can be placed on top of the fused material 507 with each pass of the print head or hopper.
  • the print head is bi-directional and will fuse material in both directions as the print head moves, so the powder hoppers operate behind the print head providing the buildup material to be fused on the next pass of the laser printing head.
  • addressable array it is meant that one or more of: the power; duration of firing; sequence of firing; position of firing; the power of the beam; the shape of the beam spot, as well as, the focal length, e.g., depth of penetration in the z- direction, can be independently varied, controlled and predetermined or each laser beam in each fiber to provide precise and predetermined delivery patterns that can create from the target material highly precise end products (e.g., built materials)
  • Embodiments of addressable arrays can also have the ability for individual beams and laser stops created by those beam to perform varied, predetermined and precise laser operations such as annealing, ablating, and melting.
  • FIG. 6 there is provided a schematic of an embodiment of a laser system with an addressable laser delivery configuration.
  • the laser system can be a laser diode array system, a brightness converted system or a high power fiber laser system.
  • the system has an addressable laser system 601 .
  • the system 601 provides independently addressable laser beams to a plurality of fibers 602a, 602b, 602c (greater and lower numbers of fibers and laser beams are contemplated).
  • the fibers 602a, 602b, 602c are combined into a fiber bundle 604 that is contained in protective tube 603, or cover.
  • the fibers 602a, 602b, 602c in fiber bundle 604 are fused together to form a printing head 605 that includes an optics assembly 606 that focuses and directs the laser beams, along beam paths, to a target material 607.
  • the target material 607 can be annealed, to form an annealed material 609.
  • the direction of movement of the laser head is shown by arrow 610.
  • FIG. 7 there is provided a schematic of an embodiment of a laser system with an addressable laser delivery configuration.
  • the system has an addressable laser diode system 701 .
  • the system 701 provides independently addressable laser beams to a plurality of fibers 702a, 702b, 702c (greater and lower numbers of fibers and laser beams are contemplated).
  • the fibers 702a, 702b, 702c are combined into a fiber bundle 704 that is contained in protective tube 703, or cover.
  • the fibers 702a, 702b, 702c in fiber bundle 704 are fused together to form a printing head powder distribution head 720.
  • the powder distribution head 720 can have the powder delivered coaxially with the laser beams, or transverse with the laser beams.
  • the powder distribution head 720 provides a layer of additional material 709, which is fused to and on the top of the target material 707. The direction of movement of the laser head is shown by arrow 710.
  • FIG. 8 shows a configuration of a bundle 800 of fibers, e.g., 801 , that are fused together, and are used in the laser head of a system such as the systems shown in FIGS 5-7.
  • the configuration will deliver laser spots configured similarly to the fiber arrangement.
  • a 1 x n linear row of fibers is the ultimate laser printing head, where n is dependent on the physical extent of the product to be printed.
  • FIG. 9 shows a configuration of a bundle 900 of fibers, e.g., 901 , that are fused together, and are used in the laser head of a system such as the systems shown in FIGS 5-8.
  • the configuration has two linear rows 902, 903 of fibers that are staggered and arranged in a rhomboid arrangement.
  • the fibers will deliver laser spots configured similarly to the fiber arrangement.
  • FIG. 10 shows a configuration of a bundle (1000) of fibers, e.g., 1001 , that are fused together, and are used in a head of a system such as the systems shown in FIGS 5-8.
  • the configuration has three linear rows 1002, 1003, 1004 of fibers that are staggered and arranged in a rhomboid arrangement.
  • the fibers will deliver laser spots configured similarly to the fiber arrangement.
  • FIG. 1 1 shows a configuration of a bundle 1 100 of fibers, e.g., 1 101 , that are fused together, and are used in a head of a system such as the systems shown in FIGS 5-8.
  • the configuration has three linear rows 1 102, 1 103, 1 104 of fibers that are staggered and arranged in triangular arrangement.
  • the fibers will deliver laser spots configured similarly to the fiber arrangement.
  • FIG. 12 shows a configuration of a bundle 1200 of fibers, e.g., 1201 , that are fused together, and are used in a head of a system such as the systems shown in FIGS 5-8.
  • the configuration has four linear rows 1202, 1203, 1204, 1205 of fibers that are not staggered and arranged in a square arrangement.
  • the fibers will deliver laser spots configured similarly to the fiber arrangement.
  • FIG. 13 shows a configuration of a bundle 1300 of fibers, e.g., 1301 , that are fused together, and are used in a head of a system such as the systems shown in FIGS 5-8.
  • the configuration has five linear rows, e.g., 1302.
  • the fibers are not staggered and are arranged in a square arrangement.
  • the fibers will deliver laser spots configured similarly to the fiber arrangement.
  • the center fiber 1402b will be held in place or other fused by a media or holding device.
  • FIGS 16A, 16B and 16C shows configurations of bundles of fibers that are arranged in arbitrary geometric arrangements. These configurations provide various levels of density of fibers in the configurations.
  • FIG. 1602 of fibers e.g., 1602b in a square configuration.
  • An array of blue laser diodes with space between each of the collimated beams in the fast axis of the laser diodes that are then combined with a periodic plate which reflects the first laser diode(s) and transmits a second laser diode(s) to fill the space between the laser diodes in the fast direction of the first array.
  • a patterned mirror on one side of the glass substrate to accomplish the space filling of Example 3 and the glass substrate is of sufficient thickness to shift the vertical position of each laser diode to fill the empty space between the individual laser diodes.
  • a stepped heat sink that accomplishes the space filling of Example 3 and is a patterned mirror as described in Example 4.
  • An array of blue laser diodes as described in Example 1 that is used to pump a Raman convertor such as an optical fiber that has a pure fused silica core to create a higher brightness source and a fluorinated outer core to contain the blue pump light.
  • a Raman convertor such as an optical fiber that has a pure fused silica core to create a higher brightness source and a fluorinated outer core to contain the blue pump light.
  • An array of blue laser diodes as described in Example 1 that is used to pump a Raman convertor such as an optical fiber that has a Ge0 2 doped central core with an outer core to create a higher brightness source and an outer core that is larger than the central core to contain the blue pump light.
  • a Raman convertor such as an optical fiber that has a Ge0 2 doped central core with an outer core to create a higher brightness source and an outer core that is larger than the central core to contain the blue pump light.
  • An array of blue laser diodes as described in Example 1 that is used to pump a Raman convertor such as an optical fiber that has a P2O5 doped core to create a higher brightness source and an outer core that is larger than the central core to contain the blue pump light.
  • a Raman convertor such as an optical fiber that has a P2O5 doped core to create a higher brightness source and an outer core that is larger than the central core to contain the blue pump light.
  • An array of blue laser diodes as described in Example 1 that is used to pump a Raman convertor such as an optical fiber that has a graded index core to create a higher brightness source and an outer core that is larger than the central core to contain the blue pump light.
  • a Raman convertor such as an optical fiber that has a graded index core to create a higher brightness source and an outer core that is larger than the central core to contain the blue pump light.
  • Example 1 An array of blue laser diodes as described in Example 1 that is used to pump a Raman convertor such as diamond to create a higher brightness laser source.
  • An array of blue laser diodes as described in Example 1 that is used to pump a Raman convertor that is a high pressure gas to create a higher brightness laser source.
  • An array of blue laser diodes as described in Example 1 that is used to pump a rare-earth doped crystal to create a higher brightness laser source.
  • An array of blue laser diodes as described in Example 1 that is used to pump a rare-earth doped fiber to create a higher brightness laser source.
  • An array of blue laser diodes as described in Example 1 that is used to pump an outer core of a brightness convertor to create a higher ratio of brightness enhancement.
  • N laser diodes where N > 1 that can be individually turned on and off and can be imaged onto a bed of powder to melt and fuse the powder into a unique part.
  • N laser diode arrays where N > 1 of Example 1 whose output can be fiber coupled and each fiber can be arranged in a linear or non-linear fashion to create an addressable array of high power laser beams that can be imaged or focused onto a powder to melt or fuse the powder into a unique shape layer by layer.
  • One or more of the laser diode arrays combined via the Raman convertor whose output can be fiber coupled and each fiber can be arranged in a linear or non-linear fashion to create an addressable array of N where N > 1 high power laser beams that can be imaged or focused onto a powder to melt or fuse the powder into a unique shape layer by layer.
  • An x-y motion system that can transport the N where N > 1 blue laser source across a powder bed while melting and fusing the powder bed with a powder delivery system positioned behind the laser source to provide a fresh powder layer behind the fused layer.
  • a z-motion system that can increment / decrement the height of the part / powder bed of Example 20 after a new layer of powder is placed.
  • a z-motion system can increment / decrement the height of the part / powder of Example 20 after the powder layer has been fused by the laser source.
  • Example 20 A bi-directional powder placement capability for Example 20 where the powder is placed directly behind the laser spot(s) as it travels in the positive x direction or the negative x direction.
  • EXAMPLE 27 A bi-directional powder placement capability for Example 20 where the powder is placed directly behind the laser spot(s) as it travels in the positive x direction or the negative x direction.
  • Example 20 A bi-directional powder placement capability for Example 20 where the powder is placed directly behind the laser spot(s) as it travels in the positive y direction or the negative y direction.
  • a powder feed system which is coaxial with N laser beams where N >
  • a powder feed system where the powder is gravity fed.
  • a powder feed system where the powder is entrained in an inert gas flow.
  • a powder feed system which is transverse to the N laser beams where N > 1 and the powder is placed by gravity just ahead of the laser beams.
  • a powder feed system which is transverse to the N laser beams where N > 1 and the powder is entrained in an inert gas flow which intersects the laser beams.
  • a second harmonic generation system which uses the output of the
  • Raman convertor at for example 460 nm to generate light at half the wavelength of the source laser or 230 nm that consists of an externally resonant doubling crystal such as KTP but does not allow the short wavelength light to propagate through the optical fiber.
  • a third harmonic generation system which uses the output of the
  • Raman convertor at for example 460 nm to generate light at 1 15 nm using an externally resonant doubling crystal but does not allow the short wavelength light to propagate through the optical fiber.
  • Raman convertor at for example 460 nm to generate light at 57.5 nm using an externally resonant doubling crystal but does not allow the short wavelength light to propagate through the optical fiber.
  • a second harmonic generation system which uses the output of a rare- earth doped brightness convertor such as Thulium that lases at 473 nm when pumped by an array of blue laser diodes at 450 nm to generate light at half the wavelength of the source laser or 236.5 nm using an externally resonant doubling crystal but does not allow the short wavelength light to propagate through the optical fiber.
  • a rare- earth doped brightness convertor such as Thulium that lases at 473 nm when pumped by an array of blue laser diodes at 450 nm to generate light at half the wavelength of the source laser or 236.5 nm using an externally resonant doubling crystal but does not allow the short wavelength light to propagate through the optical fiber.
  • a Third harmonic generation system which uses the output of a rare- earth doped brightness convertor such as Thulium that lases at 473 nm when pumped by an array of blue laser diodes at 450 nm to generate light at 1 18.25 nm using an externally resonant doubling crystal but does not allow the short wavelength light to propagate through the optical fiber.
  • a rare- earth doped brightness convertor such as Thulium that lases at 473 nm when pumped by an array of blue laser diodes at 450 nm to generate light at 1 18.25 nm using an externally resonant doubling crystal but does not allow the short wavelength light to propagate through the optical fiber.
  • a fourth harmonic generation system which uses the output of a rare- earth doped brightness convertor such as Thulium that lases at 473 nm when pumped by an array of blue laser diodes at 450 nm to generate light at 59.1 nm using an externally resonant doubling crystal but does not allow the short wavelength light to propagate through the optical fiber.
  • a rare- earth doped brightness convertor such as Thulium that lases at 473 nm when pumped by an array of blue laser diodes at 450 nm to generate light at 59.1 nm using an externally resonant doubling crystal but does not allow the short wavelength light to propagate through the optical fiber.
  • An array of blue laser diodes as described in Example 1 that is used to pump a Raman convertor such as an optical fiber that is structured to create a higher brightness source of a specific polarization and maintain the polarization state of the pump source.
  • a Raman convertor such as an optical fiber that is structured to create a higher brightness source of a specific polarization and maintain the polarization state of the pump source.
  • Examples 1 to 44 may also include one or more of the following components or assemblies: a device for leveling the powder at the end of each pass prior to the laser being scanning over the powder bed; a device for scaling the output power of the laser by combining multiple low power laser modules via a fiber combiner to create a higher power output beam; a device for scaling the output power of the blue laser module by combing multiple low power laser modules via free space to create a higher power output beam; a device for combining multiple laser modules on a single baseplate with imbedded cooling.
  • lasers, diodes, arrays, modules, assemblies, activities and operations set forth in this specification may be used in the above identified fields and in various other fields. Additionally, these embodiments, for example, may be used with: existing lasers, additive manufacturing systems, operations and activities as well as other existing equipment; future lasers, additive manufacturing systems operations and activities; and such items that may be modified, in-part, based on the teachings of this specification. Further, the various embodiments set forth in this specification may be used with each other in different and various combinations. Thus, for example, the configurations provided in the various embodiments of this specification may be used with: existing lasers, additive manufacturing systems, operations and activities as well as other existing equipment; future lasers, additive manufacturing systems operations and activities; and such items that may be modified, in-part, based on the teachings of this specification. Further, the various embodiments set forth in this specification may be used with each other in different and various combinations. Thus, for example, the configurations provided in the various embodiments of this

Abstract

L'invention concerne des ensembles pour combiner un groupe de sources laser en un faisceau laser combiné. L'invention concerne également un réseau laser de diodes bleues qui combine les faisceaux laser à partir d'un ensemble de diodes laser bleues. L'invention concerne des opérations de traitement au laser et des applications utilisant les faisceaux laser bleus combinés à partir des réseaux de diodes laser et des modules.
PCT/US2016/042363 2015-07-15 2016-07-14 Applications, procédés et systèmes pour un réseau adressable de distribution laser WO2017011706A1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
RU2018105599A RU2719337C2 (ru) 2015-07-15 2016-07-14 Применения, способы и системы для доставки лазерного излучения адресуемой матрицы
KR1020227006597A KR102513216B1 (ko) 2015-07-15 2016-07-14 레이저 전달 어드레스 가능한 어레이를 위한 용례, 방법 및 시스템
CA2992464A CA2992464A1 (fr) 2015-07-15 2016-07-14 Applications, procedes et systemes pour un reseau adressable de distribution laser
KR1020237009474A KR20230042412A (ko) 2015-07-15 2016-07-14 레이저 전달 어드레스 가능한 어레이를 위한 용례, 방법 및 시스템
JP2018501225A JP2018530768A (ja) 2015-07-15 2016-07-14 レーザー送達アドレス指定可能アレイのための用途、方法、及びシステム
KR1020187003763A KR102370083B1 (ko) 2015-07-15 2016-07-14 레이저 전달 어드레스 가능한 어레이를 위한 용례, 방법 및 시스템
CN201680041725.2A CN107851970B (zh) 2015-07-15 2016-07-14 用于激光传输可寻址阵列的应用、方法和系统
EP16825215.3A EP3323179A4 (fr) 2015-07-15 2016-07-14 Applications, procédés et systèmes pour un réseau adressable de distribution laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562193047P 2015-07-15 2015-07-15
US62/193,047 2015-07-15

Publications (1)

Publication Number Publication Date
WO2017011706A1 true WO2017011706A1 (fr) 2017-01-19

Family

ID=57757621

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2016/042363 WO2017011706A1 (fr) 2015-07-15 2016-07-14 Applications, procédés et systèmes pour un réseau adressable de distribution laser

Country Status (7)

Country Link
EP (1) EP3323179A4 (fr)
JP (3) JP2018530768A (fr)
KR (3) KR102513216B1 (fr)
CN (2) CN107851970B (fr)
CA (1) CA2992464A1 (fr)
RU (2) RU2719337C2 (fr)
WO (1) WO2017011706A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018231884A1 (fr) * 2017-06-13 2018-12-20 Nuburu, Inc. Système laser combiné à faisceaux de longueurs d'onde très denses
CN113391266A (zh) * 2021-05-28 2021-09-14 南京航空航天大学 基于非圆多嵌套阵降维子空间数据融合的直接定位方法
RU2780714C1 (ru) * 2022-01-28 2022-09-29 Федеральное государственное унитарное предприятие "Российский федеральный ядерный центр - Всероссийский научно-исследовательский институт технической физики имени академика Е.И. Забабахина" Волоконный лазер для медицины
WO2023009324A1 (fr) * 2021-07-26 2023-02-02 Daylight Solutions, Inc. Ensemble laser haute puissance avec pointage précis dans le champ lointain
WO2023146431A1 (fr) * 2022-01-28 2023-08-03 Федеральное Государственное Унитарное Предприятие "Российский Федеральный Ядерный Центр - Всероссийский Научно - Исследовательский Институт Технической Физики Имени Академика Е.И. Забабахина" Laser à fibres à usage médical

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT201800010009A1 (it) * 2018-11-02 2020-05-02 Quanta System Spa Sistema di trasporto di un fascio laser
CN111694160A (zh) * 2019-03-13 2020-09-22 深圳市联赢激光股份有限公司 一种激光光源装置
US20220276153A1 (en) * 2019-08-02 2022-09-01 Ushio Denki Kabushiki Kaisha Broadband pulsed light source apparatus and spectroscopic measurement method
CN114888303B (zh) * 2022-05-09 2024-03-15 广东粤港澳大湾区硬科技创新研究院 一种蓝色激光增材制造装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5987043A (en) * 1997-11-12 1999-11-16 Opto Power Corp. Laser diode arrays with offset components
US6124973A (en) * 1996-02-23 2000-09-26 Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Device for providing the cross-section of the radiation emitted by several solid-state and/or semiconductor diode lasers with a specific geometry
US20030063631A1 (en) * 2001-10-01 2003-04-03 Corcoran Christopher J. Compact phase locked laser array and related techniques
US20090190218A1 (en) * 2006-07-18 2009-07-30 Govorkov Sergei V High power and high brightness diode-laser array for material processing applications
US20110216792A1 (en) * 2010-03-05 2011-09-08 TeraDiode, Inc. Scalable Wavelength Beam Combining System and Method
US20120012570A1 (en) * 2005-11-25 2012-01-19 L'Air Liquide Welding France (La Soudure Autogéne Française Method for Cutting C-Mn Steel with a Fiber Laser
US20130148673A1 (en) * 2011-06-14 2013-06-13 Bae Systems Information And Electronic Systems Integration Inc. Method for beam combination by seeding stimulated brillouin scattering in optical fiber
US20130162952A1 (en) * 2010-12-07 2013-06-27 Laser Light Engines, Inc. Multiple Laser Projection System
US20140086539A1 (en) * 2011-01-24 2014-03-27 Soraa, Inc. Laser package having multiple emitters configured on a support member
WO2014179345A1 (fr) * 2013-04-29 2014-11-06 Zediker Mark S Dispositifs, systèmes et procédés d'impression tridimensionnelle

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729568A (en) * 1993-01-22 1998-03-17 Deutsche Forschungsanstalt Fuer Luft-Und Raumfahrt E.V. Power-controlled, fractal laser system
US5864644A (en) * 1997-07-21 1999-01-26 Lucent Technologies Inc. Tapered fiber bundles for coupling light into and out of cladding-pumped fiber devices
JP3831082B2 (ja) * 1997-08-27 2006-10-11 浜松ホトニクス株式会社 集光装置
US6222973B1 (en) * 1999-01-15 2001-04-24 D-Star Technologies, Inc. Fabrication of refractive index patterns in optical fibers having protective optical coatings
US6975659B2 (en) * 2001-09-10 2005-12-13 Fuji Photo Film Co., Ltd. Laser diode array, laser device, wave-coupling laser source, and exposure device
JP2003158332A (ja) * 2001-09-10 2003-05-30 Fuji Photo Film Co Ltd レーザーダイオードアレイ、レーザー装置、合波レーザー光源および露光装置
JP2003080604A (ja) * 2001-09-10 2003-03-19 Fuji Photo Film Co Ltd 積層造形装置
US7830945B2 (en) * 2002-07-10 2010-11-09 Fujifilm Corporation Laser apparatus in which laser diodes and corresponding collimator lenses are fixed to block, and fiber module in which laser apparatus is coupled to optical fiber
US7006549B2 (en) * 2003-06-11 2006-02-28 Coherent, Inc. Apparatus for reducing spacing of beams delivered by stacked diode-laser bars
JP2008501236A (ja) * 2004-06-01 2008-01-17 トルンプ フォトニクス，インコーポレイテッド 対称レーザビームを成形するためのレーザダイオードアレイ架台及びステップミラー
JP2007103704A (ja) * 2005-10-05 2007-04-19 Nichia Chem Ind Ltd 発光装置、レーザディスプレイ、内視鏡
JP2007317871A (ja) * 2006-05-25 2007-12-06 Sony Corp レーザ装置
US20090122272A1 (en) * 2007-11-09 2009-05-14 Silverstein Barry D Projection apparatus using solid-state light source array
US7948680B2 (en) * 2007-12-12 2011-05-24 Northrop Grumman Systems Corporation Spectral beam combination using broad bandwidth lasers
CN102273030B (zh) * 2008-11-04 2013-10-16 麻省理工学院 二维激光元件的外腔一维多波长光束合并
WO2010132466A1 (fr) * 2009-05-11 2010-11-18 OFS Fitel LLC, a Delaware Limited Liability Company Systèmes et procédés pour émission laser raman en cascade à hauts niveaux de puissance
JP5375532B2 (ja) * 2009-11-11 2013-12-25 コニカミノルタ株式会社 集積光源、プロジェクタ装置、及びモバイル機器
US20110305250A1 (en) * 2010-03-05 2011-12-15 TeraDiode, Inc. Wavelength beam combining based pulsed lasers
US8724222B2 (en) * 2010-10-31 2014-05-13 TeraDiode, Inc. Compact interdependent optical element wavelength beam combining laser system and method
CN102468602A (zh) * 2010-11-17 2012-05-23 北京中视中科光电技术有限公司 一种半导体激光光源
US9595813B2 (en) * 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
US9014220B2 (en) * 2011-03-10 2015-04-21 Coherent, Inc. High-power CW fiber-laser
DE102012100233B4 (de) * 2012-01-12 2014-05-15 Schott Ag Hochtransmittive Gläser mit hoher Solarisationsbeständigkeit, ihre Verwendung und Verfahren zu ihrer Herstellung
JP5764152B2 (ja) * 2013-02-13 2015-08-12 株式会社フジクラ 半導体レーザ装置
JP6036479B2 (ja) * 2013-03-28 2016-11-30 ウシオ電機株式会社 半導体レーザ装置
US9306369B2 (en) * 2013-11-22 2016-04-05 Trumpf Laser Gmbh Wavelength selective external resonator and beam combining system for dense wavelength beam combining laser

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6124973A (en) * 1996-02-23 2000-09-26 Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Device for providing the cross-section of the radiation emitted by several solid-state and/or semiconductor diode lasers with a specific geometry
US5987043A (en) * 1997-11-12 1999-11-16 Opto Power Corp. Laser diode arrays with offset components
US20030063631A1 (en) * 2001-10-01 2003-04-03 Corcoran Christopher J. Compact phase locked laser array and related techniques
US20120012570A1 (en) * 2005-11-25 2012-01-19 L'Air Liquide Welding France (La Soudure Autogéne Française Method for Cutting C-Mn Steel with a Fiber Laser
US20090190218A1 (en) * 2006-07-18 2009-07-30 Govorkov Sergei V High power and high brightness diode-laser array for material processing applications
US20110216792A1 (en) * 2010-03-05 2011-09-08 TeraDiode, Inc. Scalable Wavelength Beam Combining System and Method
US20130162952A1 (en) * 2010-12-07 2013-06-27 Laser Light Engines, Inc. Multiple Laser Projection System
US20140086539A1 (en) * 2011-01-24 2014-03-27 Soraa, Inc. Laser package having multiple emitters configured on a support member
US20130148673A1 (en) * 2011-06-14 2013-06-13 Bae Systems Information And Electronic Systems Integration Inc. Method for beam combination by seeding stimulated brillouin scattering in optical fiber
WO2014179345A1 (fr) * 2013-04-29 2014-11-06 Zediker Mark S Dispositifs, systèmes et procédés d'impression tridimensionnelle

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3323179A4 *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113745973A (zh) * 2017-06-13 2021-12-03 努布鲁有限公司 高密集波长束组合激光系统
KR20200014918A (ko) * 2017-06-13 2020-02-11 누부루 인크. 매우 조밀한 파장 빔 조합 레이저 시스템
CN110999000A (zh) * 2017-06-13 2020-04-10 努布鲁有限公司 高密集波长束组合激光系统
JP2020523793A (ja) * 2017-06-13 2020-08-06 ヌブル インク 超高密度波長ビーム結合レーザシステム
EP3639332A4 (fr) * 2017-06-13 2021-03-17 Nuburu, Inc. Système laser combiné à faisceaux de longueurs d'onde très denses
WO2018231884A1 (fr) * 2017-06-13 2018-12-20 Nuburu, Inc. Système laser combiné à faisceaux de longueurs d'onde très denses
KR102416499B1 (ko) * 2017-06-13 2022-07-01 누부루 인크. 매우 조밀한 파장 빔 조합 레이저 시스템
KR20220098276A (ko) * 2017-06-13 2022-07-11 누부루 인크. 매우 조밀한 파장 빔 조합 레이저 시스템
KR102631341B1 (ko) * 2017-06-13 2024-01-29 누부루 인크. 매우 조밀한 파장 빔 조합 레이저 시스템
CN113391266A (zh) * 2021-05-28 2021-09-14 南京航空航天大学 基于非圆多嵌套阵降维子空间数据融合的直接定位方法
WO2023009324A1 (fr) * 2021-07-26 2023-02-02 Daylight Solutions, Inc. Ensemble laser haute puissance avec pointage précis dans le champ lointain
RU2780714C1 (ru) * 2022-01-28 2022-09-29 Федеральное государственное унитарное предприятие "Российский федеральный ядерный центр - Всероссийский научно-исследовательский институт технической физики имени академика Е.И. Забабахина" Волоконный лазер для медицины
WO2023146431A1 (fr) * 2022-01-28 2023-08-03 Федеральное Государственное Унитарное Предприятие "Российский Федеральный Ядерный Центр - Всероссийский Научно - Исследовательский Институт Технической Физики Имени Академика Е.И. Забабахина" Laser à fibres à usage médical

Also Published As

Publication number Publication date
JP2018530768A (ja) 2018-10-18
RU2020111447A (ru) 2020-04-22
KR102513216B1 (ko) 2023-03-22
RU2719337C2 (ru) 2020-04-17
RU2018105599A3 (fr) 2019-08-15
RU2735581C2 (ru) 2020-11-03
CN113067252A (zh) 2021-07-02
KR20230042412A (ko) 2023-03-28
EP3323179A4 (fr) 2019-06-19
RU2020111447A3 (fr) 2020-10-02
KR20180030588A (ko) 2018-03-23
CN107851970B (zh) 2021-04-27
CA2992464A1 (fr) 2017-01-19
EP3323179A1 (fr) 2018-05-23
KR20220029781A (ko) 2022-03-08
JP2021073681A (ja) 2021-05-13
RU2018105599A (ru) 2019-08-15
CN107851970A (zh) 2018-03-27
KR102370083B1 (ko) 2022-03-03
JP2024020355A (ja) 2024-02-14

Similar Documents

Publication Publication Date Title
US11811196B2 (en) Applications, methods and systems for a laser deliver addressable array
WO2017011706A1 (fr) Applications, procédés et systèmes pour un réseau adressable de distribution laser
US20200086388A1 (en) Additive Manufacturing System with Addressable Array of Lasers and Real Time Feedback Control of each Source
EP3037246B1 (fr) Générateur de faisceau composite et procédé de frittage ou de fusion de poudre l'utilisant
KR102416499B1 (ko) 매우 조밀한 파장 빔 조합 레이저 시스템
US20170271837A1 (en) Spectrally multiplexing diode pump modules to improve brightness
CN112955303B (zh) 具有可寻址激光阵列和源实时反馈控制的增材制造系统
US20170182590A1 (en) Processing device and processing method
JP2016112609A (ja) レーザ切断装置およびレーザ切断方法
EP3812078A1 (fr) Procédé et dispositif de soudage
Hengesbach et al. Brightness and average power as driver for advancements in diode lasers and their applications
CN114514086A (zh) 双波长激光系统和使用这种系统的材料处理
JP2000343254A (ja) レーザーラインパターンニング方法
JP2016082219A (ja) 半導体レーザ発振器
CN111799655A (zh) 高功率半导体激光器
RU2793043C2 (ru) Система аддитивного производства с адресуемым массивом лазеров и управлением с обратной связью в реальном времени каждым источником
Albers Focusing of diode lasers for high beam quality in high-power applications
US20110116523A1 (en) Method of beam formatting se-dfb laser array
JP2006024860A (ja) レーザ照射装置及びレーザ照射におけるレンズ調整方法
KR101828242B1 (ko) 선형 레이저 가공 장치
CN117320835A (zh) 激光加工方法及激光加工装置
Poprawe et al. Development trends of high power diode lasers and resulting perspectives for applications
Bachmann et al. Chances and Limitations of High Power Diode Lasers—Results of Research and Development in Germany—
Bachmann Diode Laser Systems

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16825215

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2992464

Country of ref document: CA

Ref document number: 2018501225

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20187003763

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2018105599

Country of ref document: RU

Ref document number: 2016825215

Country of ref document: EP