EP3323179A4 - Applications, procédés et systèmes pour un réseau adressable de distribution laser - Google Patents
Applications, procédés et systèmes pour un réseau adressable de distribution laser Download PDFInfo
- Publication number
- EP3323179A4 EP3323179A4 EP16825215.3A EP16825215A EP3323179A4 EP 3323179 A4 EP3323179 A4 EP 3323179A4 EP 16825215 A EP16825215 A EP 16825215A EP 3323179 A4 EP3323179 A4 EP 3323179A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- applications
- systems
- methods
- addressable array
- laser deliver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0905—Dividing and/or superposing multiple light beams
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
- G02B27/0922—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers the semiconductor light source comprising an array of light emitters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/0977—Reflective elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/108—Beam splitting or combining systems for sampling a portion of a beam or combining a small beam in a larger one, e.g. wherein the area ratio or power ratio of the divided beams significantly differs from unity, without spectral selectivity
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/04—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
- H01S3/302—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects in an optical fibre
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/02—Optical fibres with cladding with or without a coating
- G02B6/02042—Multicore optical fibres
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
- H01S5/405—Two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
- Laser Beam Processing (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Semiconductor Lasers (AREA)
- Powder Metallurgy (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562193047P | 2015-07-15 | 2015-07-15 | |
PCT/US2016/042363 WO2017011706A1 (fr) | 2015-07-15 | 2016-07-14 | Applications, procédés et systèmes pour un réseau adressable de distribution laser |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3323179A1 EP3323179A1 (fr) | 2018-05-23 |
EP3323179A4 true EP3323179A4 (fr) | 2019-06-19 |
Family
ID=57757621
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP16825215.3A Pending EP3323179A4 (fr) | 2015-07-15 | 2016-07-14 | Applications, procédés et systèmes pour un réseau adressable de distribution laser |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP3323179A4 (fr) |
JP (3) | JP2018530768A (fr) |
KR (3) | KR102370083B1 (fr) |
CN (2) | CN113067252A (fr) |
CA (1) | CA2992464A1 (fr) |
RU (2) | RU2719337C2 (fr) |
WO (1) | WO2017011706A1 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US10804680B2 (en) * | 2017-06-13 | 2020-10-13 | Nuburu, Inc. | Very dense wavelength beam combined laser system |
IT201800010009A1 (it) * | 2018-11-02 | 2020-05-02 | Quanta System Spa | Sistema di trasporto di un fascio laser |
CN111694160A (zh) * | 2019-03-13 | 2020-09-22 | 深圳市联赢激光股份有限公司 | 一种激光光源装置 |
EP4009018A4 (fr) * | 2019-08-02 | 2023-10-11 | Ushio Denki Kabushiki Kaisha | Dispositif de source de lumière pulsée à large bande, dispositif de spectrométrie, procédé de spectrométrie et procédé d'analyse spectroscopique |
CN113391266B (zh) * | 2021-05-28 | 2023-04-18 | 南京航空航天大学 | 基于非圆多嵌套阵降维子空间数据融合的直接定位方法 |
WO2023009324A1 (fr) * | 2021-07-26 | 2023-02-02 | Daylight Solutions, Inc. | Ensemble laser haute puissance avec pointage précis dans le champ lointain |
WO2023146431A1 (fr) * | 2022-01-28 | 2023-08-03 | Федеральное Государственное Унитарное Предприятие "Российский Федеральный Ядерный Центр - Всероссийский Научно - Исследовательский Институт Технической Физики Имени Академика Е.И. Забабахина" | Laser à fibres à usage médical |
CN114888303B (zh) * | 2022-05-09 | 2024-03-15 | 广东粤港澳大湾区硬科技创新研究院 | 一种蓝色激光增材制造装置 |
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US20120105968A1 (en) * | 2010-10-31 | 2012-05-03 | TeraDiode, Inc. | Compact Interdependent Optical Element Wavelength Beam Combining Laser System and Method |
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-
2016
- 2016-07-14 WO PCT/US2016/042363 patent/WO2017011706A1/fr active Application Filing
- 2016-07-14 RU RU2018105599A patent/RU2719337C2/ru active
- 2016-07-14 KR KR1020187003763A patent/KR102370083B1/ko active IP Right Grant
- 2016-07-14 EP EP16825215.3A patent/EP3323179A4/fr active Pending
- 2016-07-14 CN CN202110334054.1A patent/CN113067252A/zh active Pending
- 2016-07-14 RU RU2020111447A patent/RU2735581C2/ru active
- 2016-07-14 JP JP2018501225A patent/JP2018530768A/ja active Pending
- 2016-07-14 CN CN201680041725.2A patent/CN107851970B/zh active Active
- 2016-07-14 KR KR1020227006597A patent/KR102513216B1/ko active IP Right Grant
- 2016-07-14 CA CA2992464A patent/CA2992464A1/fr active Pending
- 2016-07-14 KR KR1020237009474A patent/KR20230042412A/ko not_active Application Discontinuation
-
2020
- 2020-12-17 JP JP2020209313A patent/JP2021073681A/ja active Pending
-
2023
- 2023-11-10 JP JP2023192275A patent/JP2024020355A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20030048819A1 (en) * | 2001-09-10 | 2003-03-13 | Fuji Photo Film Co., Ltd. | Laser diode array, laser device, wave-coupling laser source, and exposure device |
US20040252743A1 (en) * | 2003-06-11 | 2004-12-16 | Anikitchev Serguei G. | Apparatus for reducing spacing of beams delivered by stacked diode-laser bars |
US20120105968A1 (en) * | 2010-10-31 | 2012-05-03 | TeraDiode, Inc. | Compact Interdependent Optical Element Wavelength Beam Combining Laser System and Method |
Also Published As
Publication number | Publication date |
---|---|
CA2992464A1 (fr) | 2017-01-19 |
CN107851970B (zh) | 2021-04-27 |
RU2735581C2 (ru) | 2020-11-03 |
CN113067252A (zh) | 2021-07-02 |
JP2018530768A (ja) | 2018-10-18 |
JP2024020355A (ja) | 2024-02-14 |
RU2020111447A (ru) | 2020-04-22 |
KR102370083B1 (ko) | 2022-03-03 |
KR102513216B1 (ko) | 2023-03-22 |
KR20180030588A (ko) | 2018-03-23 |
RU2018105599A (ru) | 2019-08-15 |
JP2021073681A (ja) | 2021-05-13 |
KR20230042412A (ko) | 2023-03-28 |
RU2020111447A3 (fr) | 2020-10-02 |
RU2719337C2 (ru) | 2020-04-17 |
KR20220029781A (ko) | 2022-03-08 |
EP3323179A1 (fr) | 2018-05-23 |
WO2017011706A1 (fr) | 2017-01-19 |
CN107851970A (zh) | 2018-03-27 |
RU2018105599A3 (fr) | 2019-08-15 |
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