WO2017004280A1 - Fiber laser-based system for uniform crystallization of amorphous silicon substrate - Google Patents

Fiber laser-based system for uniform crystallization of amorphous silicon substrate Download PDF

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Publication number
WO2017004280A1
WO2017004280A1 PCT/US2016/040222 US2016040222W WO2017004280A1 WO 2017004280 A1 WO2017004280 A1 WO 2017004280A1 US 2016040222 W US2016040222 W US 2016040222W WO 2017004280 A1 WO2017004280 A1 WO 2017004280A1
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WO
WIPO (PCT)
Prior art keywords
panel
harmonic
line
beams
assembly
Prior art date
Application number
PCT/US2016/040222
Other languages
English (en)
French (fr)
Inventor
Manuel LEONARDO
Michael Von Dadelszen
Yuri Erokhin
Original Assignee
Ipg Photonics Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ipg Photonics Corporation filed Critical Ipg Photonics Corporation
Priority to EP16818736.7A priority Critical patent/EP3314633A4/en
Priority to CN201680049828.3A priority patent/CN107924827B/zh
Priority to KR1020187002768A priority patent/KR102509883B1/ko
Publication of WO2017004280A1 publication Critical patent/WO2017004280A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
PCT/US2016/040222 2015-06-29 2016-06-29 Fiber laser-based system for uniform crystallization of amorphous silicon substrate WO2017004280A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP16818736.7A EP3314633A4 (en) 2015-06-29 2016-06-29 FIBER LASER-BASED SYSTEM FOR UNIFORM CRYSTALLIZATION OF AN AMORPHOUS SILICON SUBSTRATE
CN201680049828.3A CN107924827B (zh) 2015-06-29 2016-06-29 用于非晶硅衬底的均匀结晶的基于光纤激光器的系统
KR1020187002768A KR102509883B1 (ko) 2015-06-29 2016-06-29 비정질 실리콘 기재의 균일한 결정화를 위한 섬유 레이저-기반 시스템

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562186057P 2015-06-29 2015-06-29
US62/186,057 2015-06-29
US201662315310P 2016-03-30 2016-03-30
US62/315,310 2016-03-30

Publications (1)

Publication Number Publication Date
WO2017004280A1 true WO2017004280A1 (en) 2017-01-05

Family

ID=57609576

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2016/040222 WO2017004280A1 (en) 2015-06-29 2016-06-29 Fiber laser-based system for uniform crystallization of amorphous silicon substrate

Country Status (4)

Country Link
EP (1) EP3314633A4 (ko)
KR (1) KR102509883B1 (ko)
CN (1) CN107924827B (ko)
WO (1) WO2017004280A1 (ko)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019028064A1 (en) * 2017-07-31 2019-02-07 Ipg Photonics Corporation FIBER LASER APPARATUS AND PART PROCESSING METHOD
KR20200037306A (ko) * 2017-07-31 2020-04-08 아이피지 포토닉스 코포레이션 박막을 가공하는 레이저 장치 및 방법
US20200238441A1 (en) * 2017-10-13 2020-07-30 The Trustees Of Columbia University In The City Of New York Systems and methods for spot beam and line beam crystallization
US20210008660A1 (en) * 2017-07-31 2021-01-14 Ipg Photonics Corporation Fiber laser apparatus and method for processing workpiece

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070087488A1 (en) * 2005-10-18 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20090095724A1 (en) * 2003-09-02 2009-04-16 Ultratech, Inc. Laser thermal processing with laser diode radiation
US20110117685A1 (en) * 2009-11-17 2011-05-19 Samsung Mobile Display Co., Ltd. Method of manufacturing organic light emitting diode display
JP2014120686A (ja) * 2012-12-18 2014-06-30 Japan Steel Works Ltd:The 結晶半導体膜の製造方法
US20150179449A1 (en) * 2013-12-24 2015-06-25 Ultratech, Inc. Laser spike annealing using fiber lasers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
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JP4567984B2 (ja) * 2004-01-30 2010-10-27 株式会社 日立ディスプレイズ 平面表示装置の製造装置
US7700463B2 (en) * 2005-09-02 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI479660B (zh) * 2006-08-31 2015-04-01 Semiconductor Energy Lab 薄膜電晶體，其製造方法，及半導體裝置
CN101933201A (zh) * 2007-08-01 2010-12-29 深度光子公司 用于脉冲式谐波紫外激光器的方法和装置
JP5688203B2 (ja) * 2007-11-01 2015-03-25 株式会社半導体エネルギー研究所 半導体基板の作製方法
JP2009135448A (ja) * 2007-11-01 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法及び半導体装置の作製方法
TWI545627B (zh) * 2012-06-13 2016-08-11 Sumitomo Heavy Industries 半導體裝置的製造方法及雷射退火裝置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090095724A1 (en) * 2003-09-02 2009-04-16 Ultratech, Inc. Laser thermal processing with laser diode radiation
US20070087488A1 (en) * 2005-10-18 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110117685A1 (en) * 2009-11-17 2011-05-19 Samsung Mobile Display Co., Ltd. Method of manufacturing organic light emitting diode display
JP2014120686A (ja) * 2012-12-18 2014-06-30 Japan Steel Works Ltd:The 結晶半導体膜の製造方法
US20150179449A1 (en) * 2013-12-24 2015-06-25 Ultratech, Inc. Laser spike annealing using fiber lasers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3314633A4 *

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210008660A1 (en) * 2017-07-31 2021-01-14 Ipg Photonics Corporation Fiber laser apparatus and method for processing workpiece
JP2020529730A (ja) * 2017-07-31 2020-10-08 アイピージー フォトニクス コーポレーション 薄膜を処理するレーザ装置および方法
KR20200037306A (ko) * 2017-07-31 2020-04-08 아이피지 포토닉스 코포레이션 박막을 가공하는 레이저 장치 및 방법
CN111065759A (zh) * 2017-07-31 2020-04-24 Ipg光子公司 激光装置和对薄膜进行加工的方法
WO2019028064A1 (en) * 2017-07-31 2019-02-07 Ipg Photonics Corporation FIBER LASER APPARATUS AND PART PROCESSING METHOD
US11673208B2 (en) * 2017-07-31 2023-06-13 Ipg Photonics Corporation Fiber laser apparatus and method for processing workpiece
KR20200032186A (ko) * 2017-07-31 2020-03-25 아이피지 포토닉스 코포레이션 가공물 가공을 위한 섬유 레이저 장치 및 방법
JP2020530196A (ja) * 2017-07-31 2020-10-15 アイピージー フォトニクス コーポレーション ファイバーレーザー装置及びワークピースを処理するための方法
CN111133639A (zh) * 2017-07-31 2020-05-08 Ipg光子公司 光纤激光装置和用于加工工件的方法
EP3642384A4 (en) * 2017-07-31 2021-03-31 IPG Photonics Corporation LASER DEVICE AND METHOD FOR PROCESSING THIN FILMS
EP3646419A4 (en) * 2017-07-31 2021-06-02 IPG Photonics Corporation FIBER LASER DEVICE AND METHOD FOR MACHINING A WORKPIECE
JP7222974B2 (ja) 2017-07-31 2023-02-15 アイピージー フォトニクス コーポレーション 薄膜を処理するレーザ装置および方法
KR102513865B1 (ko) 2017-07-31 2023-03-23 아이피지 포토닉스 코포레이션 박막을 가공하는 레이저 장치 및 방법
KR102531020B1 (ko) * 2017-07-31 2023-05-11 아이피지 포토닉스 코포레이션 가공물 가공을 위한 섬유 레이저 장치 및 방법
JP7274455B2 (ja) 2017-07-31 2023-05-16 アイピージー フォトニクス コーポレーション ファイバーレーザー装置及びワークピースを処理するための方法
US20200238441A1 (en) * 2017-10-13 2020-07-30 The Trustees Of Columbia University In The City Of New York Systems and methods for spot beam and line beam crystallization

Also Published As

Publication number Publication date
EP3314633A4 (en) 2019-04-10
KR20180014439A (ko) 2018-02-08
CN107924827A (zh) 2018-04-17
EP3314633A1 (en) 2018-05-02
CN107924827B (zh) 2022-07-01
KR102509883B1 (ko) 2023-03-13

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