WO2016194404A1 - 発光装置およびその製造方法 - Google Patents
発光装置およびその製造方法 Download PDFInfo
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- WO2016194404A1 WO2016194404A1 PCT/JP2016/053831 JP2016053831W WO2016194404A1 WO 2016194404 A1 WO2016194404 A1 WO 2016194404A1 JP 2016053831 W JP2016053831 W JP 2016053831W WO 2016194404 A1 WO2016194404 A1 WO 2016194404A1
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- Prior art keywords
- light emitting
- light
- resin
- elements
- emitting device
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 124
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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- H—ELECTRICITY
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- H01L2933/0008—Processes
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Definitions
- the present invention relates to a light emitting device and a method for manufacturing the same.
- a COB (Chip On Board) light emitting device in which a light emitting element such as an LED (light emitting diode) element is mounted on a general-purpose substrate such as a ceramic substrate or a metal substrate is known.
- a light emitting element such as an LED (light emitting diode) element
- a general-purpose substrate such as a ceramic substrate or a metal substrate
- an LED element that emits blue light is sealed with a resin containing a phosphor, and light obtained by exciting the phosphor with light from the LED element is mixed, depending on the application. White light is obtained.
- Patent Document 1 discloses a highly heat-conductive heat radiation base having a mounting surface for die bonding, a hole that is placed on the heat radiation base and exposes a part of the mounting surface, and an outside of the heat radiation base.
- a circuit board having a projecting portion projecting outward from the periphery, a light emitting element mounted on the mounting surface through the hole, and a translucent resin body that seals the upper side of the light emitting element;
- a light emitting diode in which a through hole that is electrically connected to a light emitting element is formed on the outer peripheral edge of the protruding portion, and an external connection electrode is provided on the upper and lower surfaces of the through hole.
- Patent Document 2 discloses a cavity in which a recess is formed, a convex heat slug (pedestal) attached to the cavity so as to penetrate the bottom of the recess, and a submount substrate mounted on the heat slug. And a plurality of LED chips arranged on the submount substrate, a lead frame electrically connected to each LED chip, a phosphor layer enclosing each LED chip, and a silicone resin sealed in the recess. An LED package having a lens is described.
- Patent Document 3 includes a step of forming a liquid repellent pattern on a substrate, a step of mounting an LED chip inside the liquid repellent pattern on the substrate, and a sealing resin in which a phosphor is kneaded inside the liquid repellent pattern.
- a method for manufacturing a light emitting device package is described which includes a step of applying and a step of precipitating the phosphor in the sealing resin in a windless state.
- the actual color of the emitted light may be different from the color of the target light.
- the light emitting elements are mounted with a certain distance between them to prevent a short circuit. Therefore, any part of the light emitting element is included in the portion of the sealing resin that fills the space between the light emitting elements. This is because the light passing distance in the phosphor layer is different depending on whether light is emitted from the phosphor layer.
- the light transmission distance in the phosphor layer changes depending on the emission position and emission direction from the light emitting element, and the intensity of the light of the color corresponding to the phosphor also changes accordingly. It becomes difficult to match.
- the present invention provides the actual light color obtained by mixing the light emitted from a plurality of light-emitting elements mounted at high density and the excitation light from the phosphor contained in the resin that seals the light-emitting elements. It is an object of the present invention to provide a light emitting device and a method for manufacturing the same, in which deviation from a design value is suppressed as much as possible.
- a substrate a plurality of light emitting elements densely mounted on the substrate, a first resin that does not contain a phosphor and is disposed between the elements of the plurality of light emitting elements, a phosphor, And a second resin covering the periphery of the exposed portion of the light emitting element.
- the plurality of light emitting elements are densely mounted on the substrate such that the interval between adjacent light emitting elements is 5 ⁇ m or more and 50 ⁇ m or less.
- the light-emitting device preferably further includes an optical element placed on the substrate so as to cover the second resin.
- a step of mounting a plurality of light emitting elements densely on a substrate a step of arranging a first resin not containing a phosphor between the elements of the plurality of light emitting elements, and a second resin containing a phosphor And a step of covering the periphery of the exposed portions of the plurality of light emitting elements.
- the first resin is injected from the side between the elements of the plurality of light emitting elements mounted on the substrate, and the elements of the plurality of light emitting elements are closed with the first resin.
- the first resin is a resin for adhering the plurality of light emitting elements to the substrate in the mounting step, and the first resin protrudes between the elements of the plurality of light emitting elements in the arranging step. It is preferable that the plurality of light emitting elements are closed with the first resin.
- the light-emitting device and the manufacturing method thereof the light obtained from a plurality of light-emitting elements mounted at high density and the excitation light generated by the phosphor contained in the resin that seals the light-emitting elements are actually mixed. It is possible to suppress the deviation between the light color and the design value as much as possible.
- FIGS. 7A to 7C are a top view and a cross-sectional view of the light emitting device 1.
- FIG. 2 is an enlarged cross-sectional view of the light emitting device 1.
- FIG. 2 is a side view of a light emitting device 1 ′ with a lens 80.
- FIG. It is a graph which shows the relationship between the mounting space
- FIGS. 7A to 7C are a top view and a cross-sectional view showing a manufacturing process of the light emitting device 1.
- FIGS. 7A to 7C are a top view and a cross-sectional view showing a manufacturing process of the light emitting device 1.
- FIGS. 7A to 7C are a top view and a cross-sectional view showing a manufacturing process of the light emitting device 1.
- FIGS. 7A to 7C are a top view and a cross-sectional view showing a manufacturing process of the light emitting device 1.
- (A) to (C) are a top view and a cross-sectional view of the light emitting device 2.
- FIGS. 4A to 4C are a top view and a cross-sectional view showing a manufacturing process of the light emitting device 2.
- FIGS. 4A to 4C are a top view and a cross-sectional view showing a manufacturing process of the light emitting device 2.
- FIGS. 4A to 4C are a top view and a cross-sectional view showing a manufacturing process of the light emitting device 2.
- FIGS. 4A to 4C are a top view and a cross-sectional view showing a manufacturing process of the light emitting device 2.
- FIGS. 4A to 4C are a top view and
- 1A to 1C are a top view and a cross-sectional view of the light-emitting device 1.
- 1A is a top view of the light-emitting device 1 as a finished product
- FIG. 1B is a cross-sectional view taken along line IB-IB in FIG. 1A
- FIG. 1C is FIG. It is sectional drawing along the IC-IC line of A).
- the light emitting device 1 includes an LED element as a light emitting element, and is used as various lighting devices such as an illumination LED and an LED bulb.
- the light emitting device 1 includes a mounting substrate 10, a circuit substrate 20, an LED element 30, a resin frame 40, a sealing resin 50, a transparent resin 60, and a Zener diode 70 as main components.
- the mounting substrate 10 is a metal substrate having a substantially square shape as an example, and having a mounting region in which the LED element 30 is mounted at the center of the upper surface thereof. Since the mounting substrate 10 also functions as a heat dissipation substrate that dissipates heat generated by the LED elements 30 and phosphor particles described later, the mounting substrate 10 is made of aluminum having excellent heat resistance and heat dissipation, for example. However, as long as the material of the mounting substrate 10 is excellent in heat resistance and heat dissipation, another metal such as copper may be used.
- the circuit board 20 has a substantially square shape having the same size as the mounting board 10 and has a rectangular opening 21 at the center thereof.
- the lower surface of the circuit board 20 is fixed on the mounting board 10 by an adhesive sheet, for example.
- connection electrodes 23A and 23B for connecting the light emitting device 1 to an external power source are formed at two corners located diagonally on the upper surface of the circuit board 20.
- the connection electrode 23A is a positive electrode
- the connection electrode 23B is a negative electrode. When these are connected to an external power source and a voltage is applied, the light emitting device 1 emits light.
- a white resist 24 is formed on the upper surface of the circuit board 20 to cover the wiring patterns 22A and 22B except for the outer peripheral portion of the opening 21 and the portions of the connection electrodes 23A and 23B (FIG. 5A described later). See).
- the LED element 30 is an example of a light emitting element, and is, for example, a blue LED that emits blue light having an emission wavelength band of about 450 to 460 nm.
- a plurality of LED elements 30 are mounted in a lattice pattern at the center of the mounting substrate 10 exposed in the opening 21 of the circuit board 20.
- FIG. 1A shows an example where 16 LED elements 30 are mounted.
- the lower surface of the LED element 30 is fixed to the upper surface of the mounting substrate 10 with, for example, a transparent insulating adhesive.
- the LED element 30 has a pair of element electrodes on the upper surface, and the element electrodes of the adjacent LED elements 30 are electrically connected to each other by wires 31 as shown in FIG.
- the wires 31 coming out of the LED elements 30 located on the outer peripheral side of the opening 21 are connected to the wiring patterns 22 ⁇ / b> A and 22 ⁇ / b> B of the circuit board 20. Thereby, a current is supplied to each LED element 30 via the wire 31.
- the resin frame 40 is a substantially rectangular frame made of, for example, white resin in accordance with the size of the opening 21 of the circuit board 20, and is fixed to the outer peripheral portion of the opening 21 on the upper surface of the circuit board 20. .
- the resin frame 40 is a dam material for preventing the sealing resin 50 from flowing out, and the light emitted from the LED element 30 to the side is mounted above the light emitting device 1 (as viewed from the LED element 30). The light is reflected toward the opposite side of the substrate 10.
- the mounting area on the mounting substrate 10, the opening 21 of the circuit board 20, and the resin frame 40 are rectangular, but these may be other shapes such as a circle.
- the sealing resin 50 is an example of a second resin, and is injected into the opening 21 to expose the exposed portions of the plurality of LED elements 30 (for example, the LED elements 30 and the LED elements mounted on the outermost side). 30 around the resin frame 40 side). Thereby, the sealing resin 50 integrally covers and protects (seals) the plurality of LED elements 30 and the wires 31.
- a colorless and transparent resin such as an epoxy resin or a silicone resin, particularly a resin having a heat resistance of about 250 ° C. may be used.
- a phosphor such as a yellow phosphor (a phosphor 51 in FIG. 2 described later) is dispersed and mixed in the sealing resin 50.
- the yellow phosphor is a particulate phosphor material such as YAG (yttrium aluminum garnet) that absorbs blue light emitted from the LED element 30 and converts the wavelength into yellow light.
- the light emitting device 1 emits white light obtained by mixing blue light from the LED element 30 which is a blue LED and yellow light obtained by exciting the yellow phosphor thereby.
- the sealing resin 50 may contain a plurality of types of phosphors such as a green phosphor and a red phosphor.
- the green phosphor is a particulate phosphor material such as (BaSr) 2 SiO 4 : Eu 2+ that absorbs blue light emitted from the LED element 30 and converts the wavelength into green light.
- the red phosphor is a particulate phosphor material such as CaAlSiN 3 : Eu 2+ that absorbs blue light emitted from the LED element 30 and converts the wavelength into red light.
- the light emitting device 1 is obtained by mixing blue light from the LED element 30 that is a blue LED and green light and red light obtained by exciting the green phosphor and the red phosphor thereby. Emits light.
- the transparent resin 60 is an example of a first resin, and is a colorless and transparent resin such as an epoxy resin or a silicone resin similar to the sealing resin 50, but unlike the sealing resin 50, does not contain a phosphor.
- the transparent resin 60 is filled in the gaps between the LED elements 30 by filling the gaps between the LED elements 30 before the sealing resin 50 is injected into the opening 21. That is, the transparent resin 60 closes the space from the lower end to the upper end of each LED element 30 between the elements of the plurality of LED elements 30.
- the zener diode 70 is provided on the circuit board 20 to prevent the LED element 30 from being destroyed by static electricity or the like.
- the Zener diode 70 is connected to the wiring patterns 22A and 22B in parallel with the plurality of LED elements 30 (see FIG. 7A described later), and bypasses current when a voltage is applied to the LED elements 30 in the reverse direction. Thus, the LED element 30 is protected.
- FIG. 2 is an enlarged cross-sectional view of the light emitting device 1.
- the phosphor 51 contained in the sealing resin 50 is also illustrated.
- the transparent resin 60 is filled between the plurality of LED elements 30, the phosphor 51 does not enter between the elements and exists above the upper surface of the LED element 30.
- the phosphor 51 may be uniformly dispersed in the sealing resin 50
- FIG. 2 shows a state where the phosphor 51 is precipitated immediately above the LED element 30 and the transparent resin 60.
- the transparent resin 60 does not exist and the sealing resin 50 is filled between the elements of the LED element 30 that is a blue LED and the phosphor 51 enters, the light emitted from the upper surface of the LED element 30 is more than that.
- the light emitted from the side faces passes through the layer of the phosphor 51, which is a yellow phosphor, and is emitted to the outside of the light emitting device, so that the intensity of the yellow light is increased. That is, since the intensity of the yellow light varies depending on the position and direction of emission from the LED element 30, the color of the emitted light deviates from the design value.
- the phosphor 51 does not enter between the elements of the LED elements 30 due to the presence of the transparent resin 60, even light emitted laterally from the LED elements 30 passes between the elements. Therefore, the color change does not occur until the upper surface of the LED element 30 is reached. Therefore, the emitted light from the upper surface of the LED element 30 and the emitted light from the side surface are emitted to the outside of the light emitting device 1 through the phosphor 51 layer by the same distance above the upper surface of the LED element 30. That is, in the light emitting device 1, the distance through which the emitted light passes through the phosphor layer is constant regardless of the emission position and the emission direction from the LED element 30.
- the light emitted from the LED element 30 to the side does not cause a variation in color, and a shift between the actual color of the emitted light and the color of the target light is less likely to occur. Therefore, outgoing light with uniform chromaticity can be obtained.
- the transparent resin 60 should just be arrange
- the entire space from the lower end to the upper end of the LED element 30 may not be filled.
- the upper end between the elements of the LED elements 30 may be blocked by the transparent resin 60, and there may be a portion where the transparent resin 60 is not filled due to the presence of bubbles between the elements.
- FIG. 2 shows a state where the outer peripheral portion 52 between the inner wall of the opening 21 and the LED element 30 located on the outer peripheral side is also filled with the transparent resin and the phosphor 51 does not enter.
- the outer peripheral portion 52 In order to make the distance through which the emitted light passes through the phosphor layer constant and to eliminate the variation in color, it is preferable to fill the outer peripheral portion 52 with the transparent resin 60 as well.
- the outer peripheral portion 52 is not necessarily filled with the transparent resin 60. Good.
- the outer peripheral portion 52 may be filled with a white resin that does not contain a phosphor instead of the transparent resin 60.
- FIG. 3 is a side view of the light emitting device 1 ′ with the lens 80.
- the lens 80 is placed on the upper surface of the circuit board 20 so as to cover the sealing resin 50, for example.
- the lens 80 is an example of an optical element, condenses the light emitted from the plurality of LED elements 30 in the light emitting device 1, and emits the light above the light emitting device 1 '.
- a plurality of LED elements 30 are densely mounted and the light emitting portion (light emitting area) can be narrowed without reducing the number of elements, so that the light emitted from the LED elements 30 can be efficiently applied to the lens 80. It becomes possible to make it enter.
- an optical element other than the lens 80 such as a filter, may be placed on the circuit board 20.
- the light from the plurality of LED elements 30 in the light emitting device 1 may be emitted through a plate-shaped optical element instead of the lens 80.
- FIG. 4 is a graph showing the relationship between the mounting interval between the LED elements 30 and the illuminance of the light emitting device 1 ′.
- the horizontal axis of the graph is the mounting interval d ( ⁇ m) between the LED elements 30, and the vertical axis is the relative illuminance I based on the illuminance of the emitted light from the light emitting device 1 ′ when the mounting interval d is 0 mm.
- Each LED element 30 is a 1 mm square rectangle, and the incident end of the lens 80 is a circle having a diameter of 10 mm.
- the minimum value of the relative intensity I is 20 when the mounting distance d is 30 ⁇ m and when the mounting distance d is 50 ⁇ m, compared to when the mounting distance d is 0 ⁇ m, due to the variation in incorporation of the lens 80. It has decreased by about%.
- the maximum value and the average value of the relative strength I are almost constant regardless of the mounting interval d in the illustrated range.
- the mounting distance d between the LED elements 30 is so narrow that the light emitting point becomes smaller in order to collect light with the lens 80.
- a mounting interval d of at least about 5 ⁇ m so that a short circuit does not occur between adjacent LED elements 30, for example.
- the mounting interval d is excessively widened, the light emission diameter of the plurality of LED elements 30 with respect to the diameter of the incident end of the lens 80 is increased, resulting in light loss. Therefore, the illuminance of light emitted from the light emitting device 1 ′ is descend.
- the upper limit of the mounting interval d is preferably about 50 ⁇ m.
- the mounting interval d is about 50 ⁇ m or less, the process of filling the transparent resin 60 between the elements of the LED elements 30 at the time of manufacturing the light emitting device 1 becomes easy. Therefore, it is preferable that the plurality of LED elements 30 are densely mounted on the mounting substrate 10 so that the interval between the adjacent LED elements 30 is 5 ⁇ m or more and 50 ⁇ m or less.
- the upper limit of the mounting interval d between the LED elements 30 is increased to about 200 ⁇ m if the size and shape of the lens 80 are changed, for example, a lens larger than that used in the measurement of FIG. It is possible. Therefore, the mounting interval between adjacent LED elements 30 may be not less than 5 ⁇ m and not more than 200 ⁇ m.
- FIGS. 5A to 8C are a top view and a cross-sectional view showing a manufacturing process of the light emitting device 1.
- the mounting substrate 10 and the circuit substrate 20 having the opening 21 are overlaid and bonded together.
- a plurality of LED elements 30 are spaced from each other at a distance of 5 to 50 ⁇ m on the upper surface of the mounting substrate 10 exposed in the opening 21 of the circuit board 20.
- the Zener diode 70 is also mounted between the wiring pattern 22A and the wiring pattern 22B on the upper surface of the circuit board 20.
- the adjacent LED elements 30 are electrically connected to each other by the wire 31, and the wire coming out of the LED element 30 on the outer peripheral side of the opening portion 21 is connected.
- 31 is connected to the wiring patterns 22A and 22B.
- the Zener diode 70 is also connected to the wiring patterns 22A and 22B by the wire 71.
- the resin frame 40 is fixed to the outer peripheral portion of the opening 21 on the upper surface of the circuit board 20.
- a transparent resin 60 that does not contain a phosphor is arranged between the elements of the plurality of LED elements 30, and further, the sealing resin 50 that contains a phosphor covers the periphery of the exposed portions of the plurality of LED elements 30, The entire LED element 30 is sealed.
- the transparent resin 60 is, for example, injected between the elements from above after the LED elements 30 are adhered to the mounting substrate 10 with an interval of 5 to 50 ⁇ m and the die bonding adhesive is cured.
- a plurality of LED elements can be obtained by injecting a transparent resin 60 from the side between the elements of the plurality of LED elements 30 mounted on the mounting substrate 10 and spreading the resin between the elements using a capillary phenomenon.
- the 30 elements may be closed with a transparent resin 60.
- the space from the lower end to the upper end of each LED element 30 between the elements of the plurality of LED elements 30 is closed with the transparent resin 60.
- the mounting interval between the LED elements 30 is preferably about 50 ⁇ m or less.
- the LED element 30 is arranged on the mounting substrate 10 with a relatively large space through a die-bonding adhesive, and the distance between the elements is reduced to a range of 5 to 50 ⁇ m before the adhesive is cured. May be blocked between the elements by an adhesive. In this case, it is not necessary to separately inject the transparent resin 60 between the elements, and an adhesive (die bond paste) for bonding the plurality of LED elements 30 to the mounting substrate 10 corresponds to the first resin.
- the transparent resin 60 filled between the plurality of LED elements 30 may be, for example, a coating material that covers the upper surface of the LED element 30 in order to protect the wires 31. That is, the coating material may also be used as the transparent resin 60 without separately injecting the transparent resin 60 between the elements.
- FIG. 9A to 9C are a top view and a cross-sectional view of the light-emitting device 2.
- FIG. 9A is a top view of the light-emitting device 2 as a finished product
- FIG. 9B is a cross-sectional view taken along line IXB-IXB in FIG. 9A
- FIG. 9C is FIG.
- FIG. 6 is a cross-sectional view taken along line IXC-IXC of A).
- the light emitting device 2 includes a mounting substrate 10 ′, an LED element 30, a resin frame 40, a sealing resin 50, a transparent resin 60, and a Zener diode 70 as main components.
- the light emitting device 2 is different from the light emitting device 1 in that there is no circuit board 20 having the opening 21 that is in the light emitting device 1.
- the mounting substrate 10 ′ is an insulating substrate made of ceramics, for example, and has a mounting region in which the LED element 30 is mounted at the center of the upper surface thereof.
- the same plurality of LED elements 30 as in the light emitting device 1 are mounted in a grid pattern at the center of the mounting substrate 10 ′.
- the + electrode side wiring pattern 22A and the ⁇ electrode side wiring pattern 22B are formed on the upper surface of the mounting substrate 10 ′.
- Connection electrodes 23A and 23B are formed at the two corners located at.
- a white resist 24 covering the wiring patterns 22A and 22B is formed on the upper surface of the mounting substrate 10 ′ except for the outer peripheral portion of the mounting region of the LED element 30 and the connection electrodes 23A and 23B (described later). (See FIG. 10A).
- the resin frame 40 is a substantially rectangular frame similar to that of the light-emitting device 1 made of, for example, white resin in accordance with the size of the mounting area of the mounting substrate 10 ′. However, the resin frame 40 may have another shape such as a circle.
- the sealing resin 50 is injected into a portion surrounded by the resin frame 40 on the mounting substrate 10 ′ to integrally cover and protect (seal) the whole of the plurality of LED elements 30.
- the sealing resin 50 is a resin having heat resistance, such as a silicone resin, in which a phosphor is dispersed and mixed, as in the light emitting device 1.
- the transparent resin 60 is a colorless and transparent resin such as an epoxy resin or a silicone resin that does not contain a phosphor as in the light emitting device 1.
- the transparent resin 60 is injected into the gaps between the plurality of LED elements 30 before the sealing resin 50 is injected, so that the phosphor does not enter between the elements of the LED elements 30. Filled up.
- the Zener diode 70 is connected to the wiring patterns 22A and 22B in parallel with the plurality of LED elements 30 on the mounting substrate 10 ′ (see FIG. 12A described later), and a voltage is applied to the LED element 30 in the reverse direction. The LED element 30 is protected when it is received.
- the phosphor in the sealing resin 50 does not enter between the LED elements 30 due to the presence of the transparent resin 60, the emitted light is fluorescent regardless of the emission position and the emission direction from the LED element 30.
- the distance through the body layer is constant. For this reason, also in the light-emitting device 2, the shift
- the transparent resin 60 is not necessarily the lower end of each LED element 30 between the elements of the plurality of LED elements 30. The entire space from the top to the top does not have to be filled.
- the outer peripheral portion between the resin frame 40 and the LED element 30 positioned on the outer peripheral side is filled with the transparent resin 60 or the white resin.
- the phosphor in the sealing resin 50 is precipitated and the phosphor can be disposed in the outer peripheral portion with a thickness substantially equal to the upper side of the LED element 30, the outer peripheral portion is not necessarily filled with the transparent resin 60 or the white resin. It does not have to be.
- an optical element such as the lens 80 similar to the light emitting device 1 ′ may be placed on the upper surface of the mounting substrate 10 ′ so as to cover the sealing resin 50.
- the plurality of LED elements 30 are mounted on the mounting substrate 10 ′ so that the distance between adjacent LED elements 30 is 5 ⁇ m to 50 ⁇ m, or 5 ⁇ m to 200 ⁇ m. It is preferable to mount it densely on top.
- FIGS. 10A to 13C are a top view and a cross-sectional view showing a manufacturing process of the light emitting device 2.
- a mounting substrate 10 ′ on which wiring patterns 22A and 22B, connection electrodes 23A and 23B, and a white resist 24 are formed as shown in FIGS. 10A to 10C is prepared. Is done. Then, as shown in FIGS. 11A to 11C, a plurality of LED elements 30 are mounted in the center of the mounting substrate 10 ′ with an interval of 5 to 50 ⁇ m. At this time, the Zener diode 70 is also mounted between the wiring pattern 22A and the wiring pattern 22B on the upper surface of the mounting substrate 10 '. Next, as shown in FIGS.
- the adjacent LED elements 30 are electrically connected to each other by the wire 31, and the wire 31 coming out from the LED element 30 on the outer peripheral side of the mounting region is used.
- the wire 31 coming out from the LED element 30 on the outer peripheral side of the mounting region is used.
- the Zener diode 70 is also connected to the wiring patterns 22A and 22B by the wire 71.
- the resin frame 40 is fixed to the outer peripheral portion of the mounting region of the mounting substrate 10 '.
- a transparent resin 60 that does not contain a phosphor is arranged between the elements of the plurality of LED elements 30, and further, the sealing resin 50 that contains a phosphor covers the periphery of the exposed portions of the plurality of LED elements 30, The entire LED element 30 is sealed.
- the transparent resin 60 in the light emitting devices 1 and 2 may be a white resin. That is, even when a white resin not containing a phosphor is used as the first resin, the difference between the actual color of the emitted light and the color of the target light is unlikely to occur as in the light emitting devices 1 and 2. The emitted light with uniform chromaticity can be obtained.
- the LED element 30 is mounted by wire bonding, but the above configuration can be similarly applied to a light emitting device in which the LED element is flip-chip mounted. That is, since the phosphors in the sealing resin do not enter between the elements if the elements of the plurality of LED elements densely mounted on the mounting substrate and flip-chip mounted are closed with a transparent resin, similar to the light emitting devices 1 and 2 In addition, deviation between the actual color of the emitted light and the color of the target light is less likely to occur, and the emitted light with uniform chromaticity can be obtained.
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Abstract
Description
Claims (6)
- 基板と、
前記基板上に密集して実装された複数の発光素子と、
蛍光体を含有せず、前記複数の発光素子の素子間に配置された第1の樹脂と、
蛍光体を含有し、前記複数の発光素子の露出部の周囲を覆う第2の樹脂と、
を有することを特徴とする発光装置。 - 前記複数の発光素子は、隣接する発光素子同士の間隔が5μm以上かつ50μm以下になるように前記基板上に密集して実装されている、請求項1に記載の発光装置。
- 前記第2の樹脂を覆うように前記基板上に載置された光学素子をさらに有する、請求項1または2に記載の発光装置。
- 基板上に密集して複数の発光素子を実装する工程と、
蛍光体を含有しない第1の樹脂を前記複数の発光素子の素子間に配置する工程と、
蛍光体を含有する第2の樹脂で前記複数の発光素子の露出部の周囲を覆う工程と、
を有することを特徴とする発光装置の製造方法。 - 前記配置する工程では、前記基板上に実装された前記複数の発光素子の素子間に側方から前記第1の樹脂を注入して前記複数の発光素子の素子間を前記第1の樹脂で塞ぐ、請求項4に記載の製造方法。
- 前記第1の樹脂は、前記実装する工程において前記複数の発光素子を前記基板に接着させるための樹脂であり、
前記配置する工程では、前記第1の樹脂を前記複数の発光素子の素子間にはみ出させて前記複数の発光素子の素子間を前記第1の樹脂で塞ぐ、請求項4に記載の製造方法。
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DE112016002425.8T DE112016002425B4 (de) | 2015-05-29 | 2016-02-09 | Herstellungsverfahren für eine Licht emittierende Vorrichtung |
CN201680031182.6A CN107615497B (zh) | 2015-05-29 | 2016-02-09 | 发光装置及其制造方法 |
JP2017521709A JP6567050B2 (ja) | 2015-05-29 | 2016-02-09 | 発光装置およびその製造方法 |
US15/577,620 US10714460B2 (en) | 2015-05-29 | 2016-02-09 | Light emitting device and manufacturing method thereof |
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US10714460B2 (en) | 2020-07-14 |
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CN107615497A (zh) | 2018-01-19 |
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