WO2016180445A1 - Procédé de fabrication d'une couche pour la fabrication d'écrans mettant en œuvre de la vapeur d'eau et appareil correspondant - Google Patents

Procédé de fabrication d'une couche pour la fabrication d'écrans mettant en œuvre de la vapeur d'eau et appareil correspondant Download PDF

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Publication number
WO2016180445A1
WO2016180445A1 PCT/EP2015/060230 EP2015060230W WO2016180445A1 WO 2016180445 A1 WO2016180445 A1 WO 2016180445A1 EP 2015060230 W EP2015060230 W EP 2015060230W WO 2016180445 A1 WO2016180445 A1 WO 2016180445A1
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WO
WIPO (PCT)
Prior art keywords
processing gas
gas atmosphere
content
water vapor
partial pressure
Prior art date
Application number
PCT/EP2015/060230
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English (en)
Inventor
Daniel Severin
Markus Hanika
Arthur D. HSU
Pipi TSAI
Kyung Bong Kim
Wan-Yu Lin
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Applied Materials, Inc.
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Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN201580078939.2A priority Critical patent/CN107567508A/zh
Priority to CN202210571610.1A priority patent/CN114892129A/zh
Priority to KR1020177035389A priority patent/KR102109312B1/ko
Priority to PCT/EP2015/060230 priority patent/WO2016180445A1/fr
Publication of WO2016180445A1 publication Critical patent/WO2016180445A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process

Definitions

  • the present disclosure relates to a method and an apparatus for coating a substrate in a vacuum process chamber.
  • the present disclosure relates to an apparatus and a method for forming at least one layer of sputtered material on a substrate for display manufacturing.
  • a substrate e.g. on a glass substrate
  • the substrates are coated in different chambers of a coating apparatus.
  • the substrates are coated in a vacuum using a vapor deposition technique.
  • vapor deposition technique Several methods are known for depositing a material on a substrate.
  • substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process or a plasma enhanced chemical vapor deposition (PECVD) process, etc.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • the process is performed in a process apparatus or process chamber where the substrate to be coated is located.
  • a method of manufacturing a layer for a plurality of thin film transistors for display manufacturing includes sputtering a transparent conductive oxide layer from an indium oxide containing target in a processing gas atmosphere.
  • the processing gas atmosphere includes water vapor, H 2 and an inert gas, wherein the content of water vapor is from 1% to 10%, wherein the content of H2 is from 2.2% to 20.0%, and wherein the content of inert gas is from 70.0% to 96.8 %.
  • an electronic device is provided which includes a layer which is manufactured by the method of manufacturing a layer for a plurality of thin film transistors according to embodiments described herein.
  • an apparatus for depositing a layer for display manufacturing includes a vacuum chamber; one or more indium oxide containing targets within the vacuum chamber for sputtering a transparent conductive oxide layer; a gas distribution system for providing a processing gas within the vacuum chamber, wherein the vacuum chamber is connected to the gas distribution system at a first gas inlet for water vapor and a second gas inlet for H 2 , particularly wherein the vacuum chamber is further connected to the gas distribution system at a third gas inlet for 0 2 ; and a controller connected to the gas distribution system and configured to execute a program code, wherein upon execution of the program code the method of manufacturing a layer for a plurality of thin film transistors for display manufacturing according to embodiments described herein is conducted.
  • FIG. 1 shows a schematic view of an apparatus for depositing a layer for display manufacturing according to embodiments described herein;
  • FIG. 2 shows a schematic view of an apparatus for depositing a layer for display manufacturing according to embodiments described herein;
  • FIG. 3 shows a block diagram illustrating a method of manufacturing a layer for a plurality of thin film transistors for display manufacturing according to embodiments as described herein;
  • FIG. 4 shows a block diagram illustrating a method of manufacturing a layer for a plurality of thin film transistors for display manufacturing according to embodiments as described herein.
  • processing gas atmosphere may be understood as an atmosphere inside a processing chamber, particularly inside a vacuum processing chamber, of an apparatus for depositing a layer.
  • the "processing gas atmosphere” may have a volume which is specified by the volume inside the processing chamber.
  • H 2 stands for hydrogen, in particular for gaseous hydrogen.
  • the abbreviation “0 2 " stands for oxygen, in particular for gaseous oxygen.
  • the expression "degree of amorphous structure” may be understood as the ratio of amorphous structure to non-amorphous structure in the solid state.
  • the non-amorphous structure may be a crystalline structure.
  • the amorphous structure may be a glass-like structure.
  • sheet resistance may be understood as the resistance of a layer manufactured by the method according to embodiments described herein.
  • sheet resistance may refer to a case in which the layer is considered as a two-dimensional entity. It may be understood that the expression “sheet resistance” implies that the current is along the plane of the layer (i.e. the current is not perpendicular to the layer). Further, sheet resistance may refer to a case of resistivity for a uniform layer thickness.
  • the apparatus for depositing a layer for display manufacturing includes a vacuum chamber 210; one or more indium oxide, particularly indium tin oxide (ITO), containing targets 220a, 220b within the vacuum chamber for sputtering a transparent conductive oxide layer; a gas distribution system 230 for providing a processing gas within the vacuum chamber; and a controller 240 connected to the gas distribution system 230 and configured to execute a program code.
  • ITO indium tin oxide
  • the method of manufacturing a layer for a plurality of thin film transistors for display manufacturing as described herein is conducted.
  • the vacuum chamber 210 is limited by chamber walls 211 and may be connected to the gas distribution system 230 at a first gas inlet 231 for water vapor and a second gas inlet 232 for H 2 .
  • the first gas inlet 231 may be connected to the gas distribution system 230 via a first conduit having a first mass flow controller 234 configured for controlling an amount of water vapor provided to the processing gas atmosphere 222, for example a first valve.
  • the second gas inlet 232 may be connected to the gas distribution system 230 via a second conduit having a second mass flow controller 235 configured for controlling an amount of H 2 provided to the processing gas atmosphere, for example a second valve.
  • the gas distribution system may include a first gas source for providing water vapor and a second gas source for providing H 2 . Accordingly, the apparatus as described herein may be configured for providing water vapor and H 2 independently from each other, such that the water vapor content and/or the H 2 content of the processing gas atmosphere 222 within the vacuum chamber 210 can independently be controlled. Further, the gas distribution system may include a third gas source for providing inert gas. According to embodiments which can be combined with other embodiments described herein, the gas distribution system may include an inert gas flow controller (not shown) configured for controlling an amount of inert gas provided to the processing gas atmosphere.
  • the gas distribution system may include a separate gas source for providing an inert gas.
  • the separate gas source for providing an inert gas may be configured for providing the inert gas to the processing gas atmosphere separately form water vapor and/or H 2 , for example through a separate gas inlet which connects the vacuum chamber with the separate gas source for providing an inert gas.
  • the separate gas source for providing an inert gas may be employed for providing an inert gas/water vapor mixture which can be provided to the processing gas atmosphere inside the vacuum chamber, for example through the first gas inlet.
  • the separate gas source for providing an inert may be employed for providing an inert gas/H 2 mixture which can be provided to the processing gas atmosphere inside the vacuum chamber, for example through the second gas inlet.
  • the first gas source of the gas distribution system 230 for providing water vapor to the processing gas atmosphere 222 in the vacuum chamber 210 may provide an inert gas/water vapor mixture.
  • the partial pressure of the inert gas in the inert gas/ water vapor mixture may be selected from a range between a lower limit of inert gas partial pressure and an upper limit of inert gas partial pressure as specified herein.
  • the partial pressure of the water vapor in the inert gas/ water vapor mixture may be selected from a range between a lower limit of water vapor partial pressure and an upper limit of water vapor partial pressure as specified herein.
  • the second gas source of the gas distribution system 230 for providing H 2 to the processing gas atmosphere 222 in the vacuum chamber 210 may provide an inert gas/H 2 mixture.
  • the partial pressure of the inert gas in the inert gas/H 2 mixture may be selected from a range between a lower limit of inert gas partial pressure and an upper limit of inert gas partial pressure as specified herein.
  • the partial pressure of the H 2 in the inert gas/H 2 mixture may be selected from a range between a lower limit of H 2 partial pressure and an upper limit of H 2 partial pressure as specified herein.
  • the vacuum chamber 210 may include an outlet port 233, connected to an outlet conduit, which is in fluid connection with an outlet pump 236 for providing the vacuum in the vacuum chamber 210.
  • a first deposition source 223a and a second deposition source 223b may be provided within the vacuum chamber 210.
  • the deposition sources can, for example, be rotatable cathodes having targets of the material to be deposited on the substrate.
  • the target may be an indium tin oxide (ITO) containing target, particularly an ITO 90/10 containing target.
  • ITO indium tin oxide
  • the cathodes can be rotatable cathodes with magnet assemblies 221a, 221b therein. Accordingly, with the apparatus as described herein magnetron sputtering may be conducted for depositing a layer.
  • the cathodes of the first deposition source 223a and the second deposition source 223b can be connected to a power supply 250.
  • the cathodes may be connected to an AC power supply or a DC power supply.
  • sputtering from an indium oxide target e.g. for a transparent conductive oxide film, may be conducted as DC sputtering.
  • the first deposition source 223a may be connected to a first DC power supply and the second deposition source 223b may be connected to a second DC power supply. Accordingly, for DC sputtering the second deposition source 223b and the second deposition source 223b may have separate DC power supplies. According to embodiments which can be combined with other embodiments described herein, DC sputtering may include pulsed-DC sputtering, particularly bipolar-pulsed-DC sputtering. Accordingly, the power supply may be configured for providing pulsed-DC, particularly bipolar-pulsed-DC.
  • the first DC power supply for the first deposition source 223a and the second DC power supply for the second deposition source 223b may be configured for providing pulsed-DC power.
  • FIG. 1 a horizontal arrangement of deposition sources and substrate 300 to be coated is shown. In some embodiments, which may be combined with other embodiments disclosed herein, a vertical arrangement of deposition sources and substrate 300 to be coated may be used.
  • a sensor 270 may be provided in the vacuum chamber 210 for measuring the composition of the processing gas atmosphere 222.
  • the sensor 270 may be configured for measuring the content of inert gas, water vapor, H 2 , 0 2 and residual gas within the respective content ranges as specified herein.
  • the sensor 270, gas distribution system 230 including the first mass flow controller 234 and the second mass flow controller 235, and outlet pump 236 may be connected to a controller 240.
  • the controller 240 may control the gas distribution system 230 including the first mass flow controller 234 and the second mass flow controller 235, and the outlet pump 236, so that a processing atmosphere with a composition as described herein can be created and maintained in the vacuum chamber 210.
  • the controller 240 may be connected to the power supply. Further the controller may be configured for controlling a first power supplied to the first deposition source 223a and configured for controlling a second power supplied to the second deposition source 223b.
  • a substrate 300 may be disposed below the deposition sources, as exemplarily shown in FIG.l.
  • the substrate 300 may be arranged on a substrate support 310.
  • a substrate support device for a substrate to be coated may be disposed in the vacuum chamber.
  • the substrate support device may include conveying rolls, magnet guiding systems and further features.
  • the substrate support device may include a substrate drive system for driving the substrate to be coated in or out of the vacuum chamber 210.
  • the vacuum chamber 210 may be connected to the gas distribution system 230 at a third gas inlet 238 for 0 2 .
  • the third gas inlet 238 may be connected to the gas distribution system 230 via a third conduit having a third mass flow controller 237 configured for controlling the amount of 0 2 provided to the processing gas atmosphere 222, for example a third valve.
  • the gas distribution system may include a fourth gas source for providing 0 2 .
  • the apparatus as described herein may be configured for providing water vapor, H 2 , and 0 2 independently from each other, such that the water vapor content and/or the H2 content and/or the 0 2 content of the processing gas atmosphere 222 within the vacuum chamber 210 can independently be controlled.
  • the fourth gas source of the gas distribution system 230 for providing 0 2 to the processing gas atmosphere 222 in the vacuum chamber 210 may provide an inert gas/0 2 mixture.
  • the partial pressure of the inert gas in the inert gas/0 2 mixture may be selected from a range between a lower limit of inert gas partial pressure and an upper limit of inert gas partial pressure as specified herein.
  • the partial pressure of the 0 2 in the inert gas/0 2 mixture may be selected from a range between a lower limit of 0 2 partial pressure and an upper limit of 0 2 partial pressure as specified herein.
  • the gas distribution system 230 may include pumps and/or compressors for providing the desired pressure of the processing gas atmosphere inside the vacuum chamber.
  • the gas distribution system may include pumps and/or compressors for providing the partial pressure of inert gas and/or for providing the partial pressure of H 2 and/or for providing the partial pressure of water vapor and/or for providing the partial pressure of 0 2 according to the respective partial pressure ranges as specified herein by the respective upper and lower partial pressure limits of inert gas, H 2 , water vapor and 0 2 .
  • the third mass flow controller 237 may be connected to the controller 240. Accordingly, the controller 240 may control the gas distribution system 230 including the first mass flow controller 234, the second mass flow controller
  • a processing atmosphere a processing atmosphere with a composition as described herein can be created and maintained in the vacuum chamber 210.
  • all constituents of a selected processing gas atmosphere with a composition as described herein may be controlled independently from each other.
  • the controller may be configured for controlling the gas distribution system such that the flow of water vapor, the flow of H 2 , the flow of inert gas, and the flow of 0 2 can be controlled independently from each other for establishing a processing gas atmosphere with a selected composition as described herein. Accordingly, the composition of a selected processing gas atmosphere can be adjusted very accurately.
  • the apparatus according to embodiments as described herein is configured for manufacturing a layer for a plurality of thin film transistors for display manufacturing by employing the method of manufacturing a layer according to embodiments described herein.
  • FIG. 3 shows a block diagram illustrating a method of manufacturing a layer for a plurality of thin film transistors for display manufacturing according to embodiments as described herein.
  • the method 100 includes sputtering 101 a transparent conductive oxide layer from an indium oxide containing target in a processing gas atmosphere.
  • the target may be an indium tin oxide (ITO) containing target, particularly an ITO 90/10 containing target.
  • the processing gas atmosphere includes water vapor, H 2 , and an inert gas. It is to be understood that the content of the constituents of the processing gas atmosphere according to embodiments described herein may add up to 100%. In particular, according to some embodiments which can be combined with other embodiments described herein, the content of water vapor, H 2 , and inert gas may add up to 100% of the processing gas atmosphere.
  • the inert gas may be selected from the group consisting of helium, neon, argon, krypton, xenon or radon. In particular the inert gas may be argon (Ar).
  • the content of water vapor in the processing gas atmosphere may be from a range between a lower limit of 1%, particularly a lower limit of 2.0%, more particularly a lower limit of 4%, and an upper limit of 6%, particularly an upper limit of 8%, more particularly an upper limit of 10.0%.
  • the degree of amorphous structure of the oxide layer may be adjusted. In particular, by increasing the content of water vapor in the processing gas atmosphere, the degree of amorphous structure in the oxide layer may be increased.
  • the content of H 2 in the processing gas atmosphere may be from a range between a lower limit of 2.2%, particularly a lower limit of 4.2%, more particularly a lower limit of 6.1%, and an upper limit of 10%, particularly an upper limit of 15.0%, more particularly an upper limit of 20.0%.
  • a lower limit of 2.2% particularly a lower limit of 4.2%, more particularly a lower limit of 6.1%
  • an upper limit of 10% particularly an upper limit of 15.0%, more particularly an upper limit of 20.0%.
  • the lower limits of H 2 it is to be understood that the lower explosion limit of H 2 is 4.1% and the lower inertisation limit is 6.0 %.
  • the degree of amorphous structure of the oxide layer may be adjusted.
  • the degree of amorphous structure in the oxide layer may be increased.
  • the content of inert gas in the processing gas atmosphere may be from a range between a lower limit of 55%, particularly a lower limit of 73%, more particularly a lower limit of 81%, and an upper limit of 87.5%, particularly an upper limit of 92.0%, more particularly an upper limit of 96.3%.
  • the ratio of water vapor to H 2 is from a range between a lower limit of 4: 1, particularly a lower limit 2: 1, more particularly a lower limit of 1: 1.5, and an upper limit of 1:2, particularly an upper limit of 1:3, more particularly an upper limit of 1:4.
  • the control over the degree of amorphous structure in the oxide layer is improved. Accordingly, the degree of amorphous structure can be controlled more precisely, for example compared to a case in which the degree of amorphous structure in the oxide layer may only be controlled by water vapor.
  • the total pressure of the processing gas atmosphere may be from a range between a lower limit of 0.2 Pa, particularly a lower limit of 0.3 Pa, more particularly a lower limit of 0.4 Pa, and an upper limit of 0.6 Pa, particularly an upper limit of 0.7 Pa, more particularly an upper limit of 0.8 Pa.
  • the total pressure of the processing gas atmosphere may be 0.3 Pa.
  • all constituent gases of the processing gas atmosphere may be mixed prior to establishing the processing gas atmosphere in the vacuum chamber. Accordingly, prior to sputtering or during sputtering the transparent conductive oxide layer all constituent gases of the processing gas atmosphere may be supplied to the vacuum chamber through the same gas showers. In particular, depending on the selected composition of the processing gas atmosphere as described herein, water vapor, H 2 inert gas and 0 2 may be supplied to the vacuum chamber through the same gas showers.
  • the gaseous constituents of a selected processing gas atmosphere may be mixed in a mixing unit before the gaseous constituents of the selected processing gas are provided into the vacuum chamber via the gas showers.
  • the apparatus for depositing a layer may include a mixing unit for mixing the gaseous constituents of the selected processing gas before the gaseous constituents of the selected processing gas are provided into the vacuum chamber via the gas showers. Accordingly, a very homogenous processing gas atmosphere can be established in the vacuum chamber. Accordingly, a very homogenous processing gas atmosphere can be established in the vacuum chamber.
  • the partial pressure of water vapor in the processing gas atmosphere may be from a range between a lower limit of 0.004 Pa, for example in a case in which the lower limit of the water vapor content of 2.0% has been selected for a processing gas atmosphere with the lower limit of the total pressure of 0.2 Pa, and an upper limit of 0.8 Pa, for example in a case in which the upper limit of the water vapor content of 10.0% has been selected for a processing gas atmosphere with the upper limit of the total pressure of 0.8 Pa.
  • the partial pressure of water vapor in the processing gas atmosphere can be calculated by the product of the selected water vapor content in percent [%] of the processing gas atmosphere and the selected total pressure of the processing gas atmosphere in Pascal [Pa]. Accordingly, depending on the selected values of the upper and lower limits of water vapor content in the processing gas atmosphere and the selected values of the upper and lower limits of the total pressure of the processing gas atmosphere corresponding values for the lower and the upper limit of the partial pressure of water vapor in the processing gas atmosphere can be calculated and selected.
  • the partial pressure of H 2 in the processing gas atmosphere may be from a range between a lower limit of 0.0044 Pa, for example in a case in which the lower limit of the H 2 content of 2.2% has been selected for a processing gas atmosphere with the lower limit of the total pressure of 0.2 Pa, and an upper limit of 0.16 Pa, for example in a case in which the upper limit of the H 2 content of 20.0% has been selected for a processing gas atmosphere with the upper limit of the total pressure of 0.8 Pa.
  • the partial pressure of H 2 in the processing gas atmosphere can be calculated by the product of the selected H 2 content in percent [%] of the processing gas atmosphere and the selected total pressure of the processing gas atmosphere in Pascal [Pa]. Accordingly, depending on the selected values of the upper and lower limits of H 2 content in the processing gas atmosphere and the selected values of the upper and lower limits of the total pressure of the processing gas atmosphere, corresponding values for the lower and upper limit of the partial pressure of H 2 in the processing gas atmosphere can be calculated and selected.
  • the processing gas atmosphere 222 further includes 0 2 .
  • the content of 0 2 in the processing gas atmosphere may be from a range between a lower limit of 0.5%, particularly a lower limit of 1.0%, more particularly a lower limit of 1.5%, and an upper limit of 3.0%, particularly an upper limit of 4.0%, more particularly an upper limit of 15.0%.
  • the sheet resistance of the oxide layer may be adjusted and optimized with respect to low resistance.
  • the content of 0 2 has to be selected from a range between a lower critical value and an upper critical value. For, example in case the content of 0 2 is below the lower critical value or above the upper critical value, relatively high values for the sheet resistance may be obtained. Accordingly, embodiments as described herein provide for adjusting and optimizing the sheet resistance of oxide layers with respect to low resistance.
  • the processing gas atmosphere includes water vapor, H 2 , inert gas and 0 2i the respective contents of water vapor, H 2 , inert gas and 0 2 may add up to 100% of the processing gas atmosphere.
  • the partial pressure of 0 2 in the processing gas atmosphere may be from a range between a lower limit of 0.001 Pa, for example in a case in which the lower limit of the 0 2 content of 0.5% has been selected for a processing gas atmosphere with the lower limit of the total pressure of 0.2 Pa, and an upper limit of 0.12 Pa, for example in a case in which the upper limit of the 0 2 content of 15.0% has been selected for a processing gas atmosphere with the upper limit of the total pressure of 0.8 Pa.
  • the partial pressure of 0 2 in the processing gas atmosphere can be calculated by the product of the selected 0 2 content in percent [%] of the processing gas atmosphere and the selected total pressure of the processing gas atmosphere in Pascal [Pa]. Accordingly, depending on the selected values of the upper and lower limits of 0 2 content in the processing gas atmosphere and the selected values of the upper and lower limits of the total pressure of the processing gas atmosphere corresponding values for the lower and upper limit of the partial pressure of 0 2 in the processing gas atmosphere can be calculated and selected.
  • the partial pressure of inert gas in the processing gas atmosphere may be from a range between a lower limit of 0.11 Pa, for example in a case in which the lower limit of the inert gas content of 55%, the upper limit of the water vapor content of 10%, the upper limit of the H 2 content of 20%, and the upper limit of the 0 2 content of 5.0% has been selected for a processing gas atmosphere with the lower limit of the total pressure of 0.2 Pa, and an upper limit of 0.7704 Pa, for example in a case in which the upper limit of the inert gas content of 96.3%, the lower limit of the water vapor content of 1%, the lower limit of the H 2 content of 2.2%, and the lower limit of the 0 2 content of 0.5% have been selected for a processing gas atmosphere with the upper limit of the total pressure of 0.8 Pa.
  • the partial pressure of inert gas in the processing gas atmosphere can be calculated by the product of the selected inert gas content in per cent [%] of the processing gas atmosphere and the selected total pressure of the processing gas atmosphere in Pascal [Pa]. Accordingly, depending on the selected values of the upper and lower limits of inert gas content in the processing gas atmosphere and the selected values of the upper and lower limits of the total pressure of the processing gas atmosphere corresponding values for the lower and the upper limit of the partial pressure of inert gas in the processing gas atmosphere can be calculated and selected.
  • the method of manufacturing a layer for a plurality of thin film transistors for display manufacturing may further include providing water vapor and H 2 separately 102 to the processing gas atmosphere. Accordingly, the control over the degree of amorphous structure in the oxide layer is improved and the degree of amorphous structure can be controlled more precisely.
  • water vapor may be provided to the processing gas atmosphere in an inert gas/water vapor mixture.
  • the partial pressure of the inert gas in the inert gas/water vapor mixture may be selected from a lower limit of inert gas partial pressure to an upper limit of inert gas partial pressure as specified herein.
  • the partial pressure of the water vapor in the inert gas/ water vapor mixture may be selected from a range between a lower limit of water vapor partial pressure and an upper limit of water vapor partial pressure as specified herein.
  • H 2 may be provided to the processing gas atmosphere in an inert gas/H 2 mixture.
  • the partial pressure of the inert gas in the inert gas/H 2 mixture may be selected from a range between a lower limit of inert gas partial pressure and an upper limit of inert gas partial pressure as specified herein.
  • the partial pressure of the H 2 in the inert gas/H 2 mixture may be selected from a range between a lower limit of H 2 partial pressure and an upper limit of H 2 partial pressure as specified herein.
  • 0 2 is provided to the processing gas atmosphere in an inert gas/0 2 mixture.
  • the partial pressure of the inert gas in the inert gas/0 2 mixture may be selected from a range between a lower limit of inert gas partial pressure and an upper limit of inert gas partial pressure as specified herein.
  • the partial pressure of the 0 2 in the inert gas/0 2 mixture may be selected from a range between a lower limit of 0 2 partial pressure and an upper limit of 0 2 partial pressure as specified herein.
  • the method may further include controlling the degree of amorphous structure 103 of the oxide layer with the content of water vapor and/or content of H 2 in the processing gas atmosphere.
  • the degree of amorphous structure in the oxide layer may be increased.
  • the number of crystalline grains, particularly at the interface between the substrate and the first layer may be decreased.
  • the method may further include controlling the sheet resistance 104 of the oxide layer with the content of 0 2 in the processing gas atmosphere.
  • the content of 0 2 in the processing gas atmosphere during layer deposition has to be selected from a range between a lower limit and an upper limit as described herein.
  • an annealing procedure may be performed, for example in a temperature range from 200°C to 250°C.
  • the resistivity after annealing of transparent conductive oxide layer may be from a range between a lower limit 100 ⁇ cm, particularly a lower limit of 210 ⁇ ⁇ , more particularly a lower limit of 220 ⁇ Ohm cm, and an upper limit of 260 ⁇ cm, particularly an upper limit 280 ⁇ cm, more particularly an upper limit 400 ⁇ cm.
  • the resistivity after annealing of the oxide layer may be approximately 230 ⁇ cm.
  • the processing gas atmosphere consists of water vapor, H 2 , an inert gas, 0 2 , and a residual gas.
  • the content of water vapor, H 2 , inert gas and 0 2 in the processing gas atmosphere consisting of water vapor, H 2 , inert gas, 0 2 and a residual gas may be selected from a range between a respective lower limit and a respective upper limit as described herein.
  • the residual gas may be any impurity or any contaminant in the processing gas atmosphere.
  • the content of residual gas may be from 0.0% to 1.0% of the processing gas atmosphere. According to embodiments which can be combined with other embodiments described herein, the content of residual gas is 0.0% of the processing gas atmosphere.
  • the content of the constituents of the processing gas atmosphere may add up to 100%.
  • the content of water vapor, H 2 , inert gas, 0 2 and a residual gas may add up to 100% of the processing gas atmosphere in case in which residual gas is present in the processing gas atmosphere or in a case in which the processing gas atmosphere contains no residual gas, i.e. the content of the residual gas is 0.0%.
  • the method of manufacturing a layer for a plurality of thin film transistors for display manufacturing may further include patterning the layer, for example by etching, in particular wet chemical etching. Further, the method of manufacturing a layer according to embodiments described herein may include annealing the layer, for example after patterning.
  • the layer manufactured by the method of manufacturing a layer according to embodiments described herein may be employed in an electronic device, particularly in an opto-electronic device. Accordingly, by providing an electronic device with a layer according to embodiments described herein, the quality of the electronic device can be improved.
  • the method of manufacturing a layer for a plurality of thin film transistors for display manufacturing and an apparatus therefore according to embodiments described herein provide for tuning TFT display properties during manufacturing, in particular with respect to high quality and low cost.

Abstract

Cette invention concerne un procédé de fabrication d'une couche pour une pluralité de transistors à film mince pour la fabrication d'écrans, et un appareil correspondant. Ledit procédé consiste à pulvériser une couche d'oxydes transparents conducteurs à partir d'une cible contenant de l'oxyde d'indium dans une atmosphère de gaz de traitement. L'atmosphère de gaz de traitement (222) comprend de la vapeur d'eau, H2, et un gaz inerte, la teneur en vapeur d'eau allant de 1 à 10 %, la teneur en H2 allant de 2,2 à 20 %, et la teneur en gaz inerte allant de 55,0 à 96,3 %. Ledit appareil (200) comprend une chambre à vide (210); une ou plusieurs cibles contenant de l'oxyde d'indium (220a, 220b) à l'intérieur de la chambre à vide pour pulvériser une couche d'oxydes transparents conducteurs; un système de distribution de gaz (230) pour l'introduction d'un gaz de traitement à l'intérieur de la chambre à vide; et un contrôleur (240) connecté au système de distribution de gaz et configuré pour exécuter un code de programme pour commander le procédé.
PCT/EP2015/060230 2015-05-08 2015-05-08 Procédé de fabrication d'une couche pour la fabrication d'écrans mettant en œuvre de la vapeur d'eau et appareil correspondant WO2016180445A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201580078939.2A CN107567508A (zh) 2015-05-08 2015-05-08 使用水蒸汽制造用于显示器制造的层的方法和所述方法的设备
CN202210571610.1A CN114892129A (zh) 2015-05-08 2015-05-08 使用水蒸汽制造用于显示器制造的层的方法和所述方法的设备
KR1020177035389A KR102109312B1 (ko) 2015-05-08 2015-05-08 수증기를 사용하여 디스플레이 제조를 위한 층을 제조하는 방법 및 그 장치
PCT/EP2015/060230 WO2016180445A1 (fr) 2015-05-08 2015-05-08 Procédé de fabrication d'une couche pour la fabrication d'écrans mettant en œuvre de la vapeur d'eau et appareil correspondant

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PCT/EP2015/060230 WO2016180445A1 (fr) 2015-05-08 2015-05-08 Procédé de fabrication d'une couche pour la fabrication d'écrans mettant en œuvre de la vapeur d'eau et appareil correspondant

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0950712A (ja) * 1995-08-07 1997-02-18 Hitachi Ltd 透明導電膜及びその形成方法
US20110194181A1 (en) * 2008-10-17 2011-08-11 Ulvac, Inc. Film forming method for antireflection film, antireflection film, and film forming device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6318426A (ja) * 1986-07-09 1988-01-26 Casio Comput Co Ltd 入力装置
JP2000127282A (ja) 1998-10-23 2000-05-09 Kanegafuchi Chem Ind Co Ltd 透明導電膜付き透明高分子フィルム
JP2001168029A (ja) * 1999-12-10 2001-06-22 Sony Corp 半導体膜形成方法及び薄膜半導体装置の製造方法
CN1918672B (zh) * 2004-03-09 2012-10-03 出光兴产株式会社 薄膜晶体管、薄膜晶体管基板、液晶显示装置、溅射靶、透明导电膜、透明电极及它们的制造方法
KR101238926B1 (ko) * 2007-12-28 2013-03-06 가부시키가이샤 아루박 투명 도전막의 성막 방법 및 성막 장치
CN102191465A (zh) * 2010-03-18 2011-09-21 中国科学院福建物质结构研究所 一种铟掺杂氧化锌靶材及透明导电膜的制备方法
JP7059747B2 (ja) 2018-03-27 2022-04-26 ソニーグループ株式会社 微小粒子分取方法、微小粒子分取用プログラム及び微小粒子分取用システム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0950712A (ja) * 1995-08-07 1997-02-18 Hitachi Ltd 透明導電膜及びその形成方法
US20110194181A1 (en) * 2008-10-17 2011-08-11 Ulvac, Inc. Film forming method for antireflection film, antireflection film, and film forming device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BETZ U ET AL: "Thin films engineering of indium tin oxide: Large area flat panel displays application", SURFACE AND COATINGS TECHNOLOGY, ELSEVIER, AMSTERDAM, NL, vol. 200, no. 20-21, 22 May 2006 (2006-05-22), pages 5751 - 5759, XP024995712, ISSN: 0257-8972, [retrieved on 20060522], DOI: 10.1016/J.SURFCOAT.2005.08.144 *
KIM ET AL: "Effects of hydrogen gas on properties of tin-doped indium oxide films deposited by radio frequency magnetron sputtering method", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 515, no. 17, 5 May 2007 (2007-05-05), pages 6949 - 6952, XP022062458, ISSN: 0040-6090, DOI: 10.1016/J.TSF.2007.02.056 *
WANG M ET AL: "Thermal crystallization kinetics and crystallite size distribution of amorphous ITO film deposited in the presence or absence of water vapor", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 518, no. 11, 31 March 2010 (2010-03-31), pages 2992 - 2995, XP026939328, ISSN: 0040-6090, [retrieved on 20090819], DOI: 10.1016/J.TSF.2009.08.015 *

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