WO2016180447A1 - Procédé de fabrication d'une couche pour la fabrication d'écrans mettant en œuvre de l'hydrogène et appareil correspondant - Google Patents

Procédé de fabrication d'une couche pour la fabrication d'écrans mettant en œuvre de l'hydrogène et appareil correspondant Download PDF

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Publication number
WO2016180447A1
WO2016180447A1 PCT/EP2015/060232 EP2015060232W WO2016180447A1 WO 2016180447 A1 WO2016180447 A1 WO 2016180447A1 EP 2015060232 W EP2015060232 W EP 2015060232W WO 2016180447 A1 WO2016180447 A1 WO 2016180447A1
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WO
WIPO (PCT)
Prior art keywords
processing gas
gas atmosphere
content
layer
inert gas
Prior art date
Application number
PCT/EP2015/060232
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English (en)
Inventor
Daniel Severin
Andreas KLÖPPEL
Markus Hanika
Marcus Bender
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Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to PCT/EP2015/060232 priority Critical patent/WO2016180447A1/fr
Publication of WO2016180447A1 publication Critical patent/WO2016180447A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process

Definitions

  • the present disclosure relates to a method and an apparatus for coating a substrate in a vacuum process chamber.
  • the present disclosure relates to an apparatus and a method for forming at least one layer of sputtered material on a substrate for display manufacturing.
  • a substrate e.g. on a glass substrate
  • the substrates are coated in different chambers of a coating apparatus.
  • the substrates are coated in a vacuum using a vapor deposition technique.
  • vapor deposition technique Several methods are known for depositing a material on a substrate.
  • substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process or a plasma enhanced chemical vapor deposition (PECVD) process, etc.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • the process is performed in a process apparatus or process chamber where the substrate to be coated is located.
  • a method of manufacturing a layer for a plurality of thin film transistors for display manufacturing includes sputtering a transparent conductive oxide layer from an indium oxide containing target in a processing gas atmosphere.
  • the processing gas atmosphere includes H 2, 0 2 , and an inert gas, wherein the content of H 2 is from 2.2% to 20.0%, wherein the content of 0 2 is from 0.5% to 15.0%, and wherein the content of inert gas is from 65.0% to 97.3 %.
  • an electronic device is provided which includes a layer which is manufactured by the method of manufacturing a layer for a plurality of thin film transistors according to embodiments described herein.
  • an apparatus for depositing a layer for display manufacturing includes a vacuum chamber, one or more indium oxide containing targets within the vacuum chamber for sputtering a transparent conductive oxide layer, a gas distribution system for providing a processing gas within the vacuum chamber, and a controller connected to the gas distribution system and configured to execute a program code, wherein upon execution of the program code the method of manufacturing a layer for a plurality of thin film transistors for display manufacturing according to embodiments described herein is conducted.
  • FIG. 1 shows a schematic view of an apparatus for depositing a layer for display manufacturing according to embodiments described herein;
  • FIG. 2 shows a block diagram illustrating a method of manufacturing a layer for a plurality of thin film transistors for display manufacturing according to embodiments as described herein;
  • FIG. 3 shows a block diagram illustrating a method of manufacturing a layer for a plurality of thin film transistors for display manufacturing according to embodiments as described herein.
  • processing gas atmosphere may be understood as an atmosphere inside a processing chamber, particularly inside a vacuum processing chamber of an apparatus for depositing a layer.
  • the “processing gas atmosphere” may have a volume which is specified by the volume inside the processing chamber.
  • the abbreviation “H 2 " stands for hydrogen, in particular for gaseous hydrogen.
  • the abbreviation “0 2” stands for oxygen, in particular for gaseous oxygen.
  • the expression "degree of amorphous structure” may be understood as the ratio of amorphous structure to non-amorphous structure in the solid state.
  • the non-amorphous structure may be a crystalline structure.
  • the amorphous structure may be a glass-like structure.
  • sheet resistance may be understood as the resistance of a layer manufactured by the method according to embodiments described herein.
  • sheet resistance may refer to a case in which the layer is considered as a two-dimensional entity. It may be understood that the expression “sheet resistance” implies that the current is along the plane of the layer (i.e. the current is not perpendicular to the layer). Further, sheet resistance may refer to a case of resistivity for a uniform layer thickness.
  • the apparatus for depositing a layer for display manufacturing includes a vacuum chamber 210; one or more indium oxide, particularly indium tin oxide (ITO), containing targets 220a, 220b within the vacuum chamber for sputtering a transparent conductive oxide layer; a gas distribution system 230 for providing a processing gas within the vacuum chamber; and a controller 240 connected to the gas distribution system 230 and configured to execute a program code.
  • ITO indium tin oxide
  • the method of manufacturing a layer for a plurality of thin film transistors for display manufacturing as described herein is conducted.
  • the vacuum chamber 210 is limited by chamber walls 211 and may be connected to the gas distribution system 230 at a first gas inlet 231 for H 2 and a second gas inlet 232 for 0 2 .
  • the first gas inlet 231 may be connected to the gas distribution system 230 via a first conduit having a first mass flow controller 234 configured for controlling an amount of H 2 provided to the processing gas atmosphere, for example a first valve.
  • the second gas inlet 232 may be connected to the gas distribution system 230 via a second conduit having a second mass flow controller 235 configured for controlling an amount of 0 2 provided to the processing gas atmosphere, for example a second valve.
  • the gas distribution system may include a first gas source for providing H 2 and a second gas source for providing 0 2 .
  • the apparatus as described herein may be configured for providing H 2 and 0 2 independently from each other, such that the H 2 content and/or the 0 2 content of the processing gas atmosphere 222 within the vacuum chamber 210 can independently be controlled.
  • the gas distribution system may include a third gas source for providing an inert gas.
  • the third gas source may be configured for providing the inert gas to the processing gas atmosphere separately form H 2 and/or 0 2 , for example through a separate third gas inlet which connects the vacuum chamber with the third gas source of the gas distribution system.
  • the gas distribution system may include an inert gas flow controller (not shown) configured for controlling an amount of inert gas provided to the processing gas atmosphere.
  • the third gas source may be employed for providing an inert gas/H 2 mixture which can be provided to the processing gas atmosphere inside the vacuum chamber through the first gas inlet. Additionally or alternatively, the third gas source may be employed for providing an inert gas/0 2 mixture which can be provided to the processing gas atmosphere inside the vacuum chamber through the second gas inlet. [0020] According to embodiments which can be combined with other embodiments described herein, the first gas source of the gas distribution system 230 for providing H 2 to the processing gas atmosphere 222 in the vacuum chamber 210 may provide an inert gas/H 2 mixture.
  • the partial pressure of the inert gas in the inert gas/H 2 mixture may be selected from a range between a lower limit of inert gas partial pressure and an upper limit of inert gas partial pressure as specified herein. Accordingly, the partial pressure of the H 2 in the inert gas/H 2 mixture may be selected from a range between a lower limit of H 2 partial pressure and an upper limit of H 2 partial pressure as specified herein.
  • the second gas source of the gas distribution system 230 for providing 0 2 to the processing gas atmosphere 222 in the vacuum chamber 210 may provide an inert gas/0 2 mixture.
  • the partial pressure of the inert gas in the inert gas/0 2 mixture may be selected from a range between a lower limit of inert gas partial pressure and an upper limit of inert gas partial pressure as specified herein.
  • the partial pressure of the 0 2 in the inert gas/0 2 mixture may be selected from a range between a lower limit of 0 2 partial pressure and an upper limit of 0 2 partial pressure as specified herein.
  • the gas distribution system 230 may include pumps and/or compressors for providing the desired pressure of the processing gas atmosphere inside the vacuum chamber.
  • the gas distribution system may include pumps and/or compressors for providing the partial pressure of inert gas and/or for providing the partial pressure of H 2 and/or for providing the partial pressure of 0 2 according to the respective partial pressure ranges as specified herein by the respective upper and lower partial pressure limits of inert gas, H 2 , and 0 2 .
  • the vacuum chamber 210 may include an outlet port 233, connected to an outlet conduit, which is in fluid connection with an outlet pump 236 for providing the vacuum in the vacuum chamber 210.
  • a first deposition source 223a and a second deposition source 223b may be provided within the vacuum chamber 210.
  • the deposition sources can, for example, be rotatable cathodes having targets of the material to be deposited on the substrate.
  • the target may be an indium tin oxide (ITO) containing target, particularly an ITO 90/10 containing target.
  • ITO indium tin oxide
  • the cathodes can be rotatable cathodes with magnet assemblies 221a, 221b therein. Accordingly, with the apparatus as described herein magnetron sputtering may be conducted for depositing a layer.
  • the cathodes of the first deposition source 223a and the second deposition source 223b can be connected to a power supply 250.
  • the power supply 250 may be connected to the controller 240 such that the power supply can be controlled by the controller, as exemplarily shown in FIG. 1.
  • the cathodes may be connected to an AC (alternating current) power supply or a DC (direct current) power supply.
  • DC sputtering from an indium oxide target may be conducted as DC sputtering.
  • the first deposition source 223a may be connected to a first DC power supply and the second deposition source 223b may be connected to a second DC power supply.
  • the second deposition source 223b and the second deposition source 223b may have separate DC power supplies.
  • DC sputtering may include pulsed-DC sputtering, particularly bipolar-pulsed-DC sputtering.
  • the power supply may be configured for providing pulsed-DC, particularly bipolar-pulsed-DC.
  • the first DC power supply for the first deposition source 223a and the second DC power supply for the second deposition source 223b may be configured for providing pulsed-DC power.
  • FIG. 1 a horizontal arrangement of deposition sources and substrate 300 to be coated is shown. In some embodiments, which may be combined with other embodiments disclosed herein, a vertical arrangement of deposition sources and substrate 300 to be coated may be used.
  • a sensor 270 may be provided in the vacuum chamber 210 for measuring the composition of the processing gas atmosphere 222.
  • the sensor 270 may be configured for measuring the content of inert gas, H 2 , 0 2 and residual gas within the respective content ranges as specified herein.
  • the senor 170, gas distribution system 230 including the first mass flow controller 234 and the second mass flow controller 235, and outlet pump 236 may be connected to a controller 240.
  • the controller 240 may control the first mass flow controller 234, the second mass flow controller 235, the inert gas flow controller and the outlet pump 236, so that a atmosphere with a composition as described herein is created and maintained in the vacuum chamber 210. Accordingly, all constituents of a selected processing gas atmosphere with a composition as described herein may be controlled independently from each other.
  • the controller may be configured for controlling the gas distribution system such that the flow of H 2 , the flow of 0 3 ⁇ 4 and the flow of inert gas can be controlled independently from each other for establishing a processing gas atmosphere with a selected composition as described herein. Accordingly, the composition of a selected processing gas atmosphere can be adjusted very accurately.
  • a substrate 300 may be disposed below the deposition sources, as exemplarily shown in FIG.l.
  • the substrate 300 may be arranged on a substrate support 310.
  • a substrate support device for a substrate to be coated may be disposed in the vacuum chamber.
  • the substrate support device may include conveying rolls, magnet guiding systems and further features.
  • the substrate support device may include a substrate drive system for driving the substrate to be coated in or out of the vacuum chamber 210.
  • FIG. 2 shows a block diagram illustrating a method of manufacturing a layer for a plurality of thin film transistors for display manufacturing according to embodiments as described herein.
  • the method 100 includes sputtering 101 of a transparent conductive oxide layer from an indium oxide containing target in a processing gas atmosphere.
  • the target may be an indium tin oxide ( ⁇ ) containing target, particularly an ⁇ 90/10 containing target.
  • the processing gas atmosphere includes H 2 , 0 2 and an inert gas.
  • the inert gas may be selected from the group consisting of helium, neon, argon, krypton, xenon or radon.
  • the inert gas may be argon (Ar).
  • the content of the constituents of the processing gas atmosphere according to embodiments described herein may add up to 100%.
  • the content of H 2 , 0 2 and inert gas may add up to 100% of the processing gas atmosphere.
  • the method of manufacturing a layer as described herein is carried out at room temperature.
  • the content of H 2 in the processing gas atmosphere may be selected from a range between a lower limit of 2.2%, particularly a lower limit of 3.0 %, particularly a lower limit of 4.2%, more particularly a lower limit of 6.1%, and an upper limit of 10%, particularly an upper limit of 15.0%, more particularly an upper limit of 20.0%.
  • a lower limit of 2.2% particularly a lower limit of 3.0 %, particularly a lower limit of 4.2%, more particularly a lower limit of 6.1%
  • an upper limit of 10% particularly an upper limit of 15.0%, more particularly an upper limit of 20.0%.
  • the lower limits of H 2 it is to be understood that the lower explosion limit of H 2 is 4.1% and the lower inertisation limit is 6.0 %.
  • the degree of amorphous structure of the oxide layer may be adjusted. In particular, by increasing the content of H 2 in the processing gas atmosphere the degree of amorphous structure in the oxide layer may be increased.
  • the formation of a crystalline ITO phase may be suppressed.
  • a reduction in crystalline ITO residuals on the substrate can be achieved. Accordingly, the quality of a patterned oxide layer employed for TFT display manufacturing can be increased.
  • the content of 0 2 in the processing gas atmosphere may be from a range between a lower limit of 0.5%, particularly a lower limit of 1.0%, more particularly a lower limit of 1.5%, and an upper limit of 8.0%, particularly an upper limit of 10.0%, more particularly an upper limit of 15.0%.
  • the sheet resistance of the oxide layer may be adjusted and optimized with respect to low resistance.
  • the content of 0 2 has to be selected from a range between a lower critical value and an upper critical value.
  • a lower critical value For, example in case the content of 0 2 is below the lower critical value or above the upper critical value, relatively high values for the sheet resistance may be obtained.
  • embodiments as described herein provide for adjusting and optimizing the sheet resistance oxide layers with respect to low resistance.
  • the content of inert gas is in the processing gas atmosphere may be from a range between a lower limit of 65%, particularly a lower limit of 81%, more particularly a lower limit of 87%, and an upper limit of 91.5%, particularly an upper limit of 94.0%, more particularly an upper limit of 97.3%.
  • the processing gas atmosphere consists of H 2 , 0 2 , an inert gas and a residual gas.
  • the content of H 2 , 0 2 and inert gas in the processing gas atmosphere consisting of H 2 , 0 2 and inert gas may be selected from a range between a respective lower limit and a respective upper limit as described herein.
  • the residual gas may be any impurity or any contaminant in the processing gas atmosphere.
  • the content of residual gas may be from 0.0% to 1.0% of the processing gas atmosphere.
  • the content of residual gas is 0.0% of the processing gas atmosphere. It is to be understood that the content of the constituents of the processing gas atmosphere according to embodiments described herein may add up to 100%. In particular, the content of H 2 , 0 2 , inert gas and residual gas may add up to 100% of the processing gas atmosphere in the case that residual gas is present in the processing gas atmosphere or in the case that the processing gas atmosphere contains no residual gas, i.e. the content of the residual gas is 0.0%.
  • the total pressure of the processing gas atmosphere may be from a range between a lower limit of 0.2 Pa, particularly a lower limit of 0.3 Pa, more particularly a lower limit of 0.4 Pa, and an upper limit of 0.6 Pa, particularly an upper limit of 0.7 Pa, more particularly an upper limit of 0.8 Pa.
  • the total pressure of the processing gas atmosphere may be 0.3 Pa.
  • all constituent gases of the processing gas atmosphere may be mixed prior to establishing the processing gas atmosphere in the vacuum chamber. Accordingly, prior to sputtering or during sputtering the transparent conductive oxide layer all constituent gases of the processing gas atmosphere may be supplied to the vacuum chamber through the same gas showers. In particular, depending on the selected composition of the processing gas atmosphere as described herein, H 2, 0 2 and inert gas may be supplied to the vacuum chamber through the same gas showers.
  • the gaseous constituents of a selected processing gas atmosphere may be mixed in a mixing unit before the gaseous constituents of the selected processing gas are provided into the vacuum chamber via the gas showers.
  • the apparatus for depositing a layer may include a mixing unit for mixing the gaseous constituents of the selected processing gas before the gaseous constituents of the selected processing gas are provided into the vacuum chamber via the gas showers. Accordingly, a very homogenous processing gas atmosphere can be established in the vacuum chamber.
  • the partial pressure of H 2 in the processing gas atmosphere may be from a range between a lower limit of 0.0044 Pa, for example in a case in which the lower limit of the H 2 content of 2.2% has been selected for a processing gas atmosphere with the lower limit of the total pressure of 0.2 Pa, and an upper limit of 0.16 Pa, for example in a case in which the upper limit of the H 2 content of 20.0% has been selected for a processing gas atmosphere with the upper limit of the total pressure of 0.8 Pa.
  • the partial pressure of H 2 in the processing gas atmosphere can be calculated by the product of the selected H 2 content in percent [%] of the processing gas atmosphere and the selected total pressure of the processing gas atmosphere in Pascal [Pa]. Accordingly, depending on the selected values of the upper and lower limits of H 2 content in the processing gas atmosphere and the selected values of the upper and lower limits of the total pressure of the processing gas atmosphere, the corresponding values for the lower and upper limit of the partial pressure of H 2 in the processing gas atmosphere can be calculated and selected.
  • the partial pressure of 0 2 in the processing gas atmosphere may be from a range between a lower limit of 0.001 Pa, for example in a case in which the lower limit of the 0 2 content of 0.5% has been selected for a processing gas atmosphere with the lower limit of the total pressure of 0.2 Pa, and an upper limit of 0.12 Pa, for example in a case in which the upper limit of the 0 2 content of 15.0% has been selected for a processing gas atmosphere with the upper limit of the total pressure of 0.8 Pa.
  • the partial pressure of 0 2 in the processing gas atmosphere can be calculated by the product of the selected 0 2 content in percent [%] of the processing gas atmosphere and the selected total pressure of the processing gas atmosphere in Pascal [Pa]. Accordingly, depending on the selected values of the upper and lower limits of 0 2 content in the processing gas atmosphere and the selected values of the upper and lower limits of the total pressure of the processing gas atmosphere, the corresponding values for the lower and the upper limit of the partial pressure of 0 2 in the processing gas atmosphere can be calculated and selected.
  • the partial pressure of inert gas in the processing gas atmosphere may be from a range between a lower limit of 0.13 Pa, for example in a case in which the lower limit of the inert gas content of 65% has been selected for a processing gas atmosphere with the lower limit of the total pressure of 0.2 Pa, and a upper limit of 0.7784 Pa, for example in a case in which the upper limit of the inert gas content of 97.3% have been selected for a processing gas atmosphere with the upper limit of the total pressure of 0.8 Pa.
  • the partial pressure of inert gas in the processing gas atmosphere can be calculated by the product of the selected inert gas content in percent [%] of the processing gas atmosphere and the selected total pressure of the processing gas atmosphere in Pascal [Pa]. Accordingly, depending on the selected values of the upper and lower limits of inert gas content in the processing gas atmosphere and the selected values of the upper and lower limits of the total pressure of the processing gas atmosphere, the corresponding values for the lower and the upper limit of the partial pressure of inert gas in the processing gas atmosphere can be calculated and selected.
  • the method of manufacturing a layer for a plurality of thin film transistors for display manufacturing may further include providing H 2 and 0 2 separately (102) to the processing gas atmosphere. Accordingly, the content of H 2 and 0 2 in the processing gas atmosphere may be controlled independently from each other. Accordingly, high control over the properties of the transparent conductive oxide layer, e.g. the degree of amorphous structure and the sheet resistance, can be achieved.
  • H 2 may be provided to the processing gas atmosphere in an inert gas/H 2 mixture.
  • the partial pressure of the inert gas in the inert gas/H 2 mixture may be selected from a range between a lower limit of inert gas partial pressure and an upper limit of inert gas partial pressure as specified herein.
  • the partial pressure of the H 2 in the inert gas/H 2 mixture may be selected from a range between a lower limit of H 2 partial pressure and an upper limit of H 2 partial pressure as specified herein.
  • 0 2 is provided to the processing gas atmosphere in an inert gas/0 2 mixture.
  • the partial pressure of the inert gas in the inert gas/0 2 mixture may be selected from a range between a lower limit of inert gas partial pressure and an upper limit of inert gas partial pressure as specified herein.
  • the partial pressure of the 0 2 in the inert gas/0 2 mixture may be selected from a range between a lower limit of 0 2 partial pressure and an upper limit of 0 2 partial pressure as specified herein.
  • the method may further include controlling the degree of amorphous structure 103 of the oxide layer by the content of H 2 in the processing gas atmosphere.
  • the degree of amorphous structure in the oxide layer may be increased.
  • the number of crystalline grains, particularly at the substrate layer interface may be decreased.
  • the method may further include controlling the sheet resistance 104 of the oxide layer with the content of 0 2 in the processing gas atmosphere.
  • the content of 0 2 in the processing gas atmosphere during layer deposition has to be selected from a range between a lower limit and an upper limit as described herein.
  • an annealing procedure may be performed, for example in a temperature range from 200°C to 250°C.
  • the resistivity after annealing of the oxide layer may be from a range between a lower limit 100 ⁇ Ohm cm, particularly a lower limit of 125 ⁇ Ohm cm, more particularly a lower limit of 150 ⁇ cm, and an upper limit of 250 ⁇ cm, particularly an upper limit 275 ⁇ cm, more particularly an upper limit 300 ⁇ cm.
  • the resistivity after annealing of the oxide layer may be approximately 230 ⁇ cm.
  • the method of manufacturing a layer for a plurality of thin film transistors for display manufacturing may further include patterning the layer, for example by etching, in particular wet chemical etching. Further, the method of manufacturing a layer according to embodiments described herein may include annealing the layer, for example after patterning.
  • the layer manufactured by the method of manufacturing a layer according to embodiments described herein may be employed in an electronic device, particularly in an opto-electronic device. Accordingly, by providing an electronic device with a layer according to embodiments described herein, the quality of the electronic device can be improved.
  • the method of manufacturing a layer for a plurality of thin film transistors for display manufacturing and an apparatus therefore according to embodiments described herein provide for tuning TFT display properties during manufacturing, in particular with respect to high quality and low cost.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

Cette invention concerne un procédé de fabrication d'une couche pour une pluralité de transistors à film mince pour la fabrication d'écrans, et un appareil correspondant. Ledit procédé consiste à pulvériser une couche d'oxydes transparents conducteurs à partir d'une cible contenant de l'oxyde d'indium dans une atmosphère de gaz de traitement. L'atmosphère de gaz de traitement comprend de l'H2, de l'O2 et un gaz inerte, la teneur en H2 allant de 2,2 à 20,0 %, la teneur en O2 allant de 0,5 à 15,0 % et la teneur en gaz inerte allant de 65,0 à 97,3 %. Ledit appareil (200) comprend une chambre à vide (210) ; une ou plusieurs cibles contenant de l'oxyde d'indium (220a, 220b) à l'intérieur de la chambre à vide pour la pulvérisation d'une couche d'oxydes transparents conducteurs ; un système de distribution de gaz (230) pour introduire un gaz de traitement à l'intérieur de la chambre à vide ; et un contrôleur (240) connecté au système de distribution de gaz et configuré pour exécuter un code de programme pour commander le procédé.
PCT/EP2015/060232 2015-05-08 2015-05-08 Procédé de fabrication d'une couche pour la fabrication d'écrans mettant en œuvre de l'hydrogène et appareil correspondant WO2016180447A1 (fr)

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