WO2018006944A1 - Procédé de formation d'une structure émettant de la lumière et appareil correspondant - Google Patents

Procédé de formation d'une structure émettant de la lumière et appareil correspondant Download PDF

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Publication number
WO2018006944A1
WO2018006944A1 PCT/EP2016/065826 EP2016065826W WO2018006944A1 WO 2018006944 A1 WO2018006944 A1 WO 2018006944A1 EP 2016065826 W EP2016065826 W EP 2016065826W WO 2018006944 A1 WO2018006944 A1 WO 2018006944A1
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WIPO (PCT)
Prior art keywords
electrode portion
reflective electrode
transparent conductive
content
layer
Prior art date
Application number
PCT/EP2016/065826
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English (en)
Inventor
Wan-Yu Lin
Jürgen Grillmayer
Pipi TSAI
Original Assignee
Applied Materials, Inc.
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Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to KR1020187014901A priority Critical patent/KR102119037B1/ko
Priority to CN201690001396.4U priority patent/CN213266673U/zh
Priority to PCT/EP2016/065826 priority patent/WO2018006944A1/fr
Publication of WO2018006944A1 publication Critical patent/WO2018006944A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes

Definitions

  • the present disclosure relates to a method and an apparatus for coating a substrate in a vacuum process chamber.
  • the present disclosure relates to an apparatus and a method for forming at least one layer of sputtered material on a substrate for display manufacturing.
  • a substrate e.g. on a glass substrate
  • the substrates are coated in different chambers of a coating apparatus.
  • the substrates are coated in a vacuum using a vapor deposition technique.
  • vapor deposition technique Several methods are known for depositing a material on a substrate.
  • substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process or a plasma enhanced chemical vapor deposition (PECVD) process, or the like.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • the process is performed in a process apparatus or process chamber where the substrate to be coated is located.
  • LED light-emitting diode
  • OLED organic light-emitting diode
  • the potential advantages of OLEDs include thin, low-cost displays with a low driving voltage, wide viewing angle, and high contrast and color gamut.
  • the different layers in the OLED may be error-prone, inducing for instance cathode shorts or oxidation reducing reflection.
  • a method for forming a light emitting structure on a substrate includes forming a first reflective electrode portion, forming an emitter layer over the first reflective electrode portion and forming a second electrode portion over the emitter layer.
  • Forming the first reflective electrode portion includes depositing a first transparent conductive metal oxide layer, a reflective metal layer and a second metal oxide layer (especially a second transparent conductive metal oxide layer) in a process atmosphere including process gases.
  • the method further includes setting the light absorption properties of the first reflective electrode portion to a light absorption of less than 6% of the incident light by controlling the ratio of 0 2 content and H 2 content of the process gas.
  • an electronic device which includes a light emitting structure which is manufactured by the method of forming a light emitting structure according to embodiments described herein.
  • a light emitting structure includes a first reflective electrode portion, an emitter layer on the first reflective electrode portion and a second electrode portion on the emitter layer.
  • the first reflective electrode portion includes a first transparent conductive metal oxide layer, a reflective metal layer and a second metal oxide layer (especially a second transparent conductive metal oxide layer).
  • the first reflective electrode portion has a light absorption of less than 6% of the incident light.
  • an apparatus for depositing an electrode portion for a light emitting structure includes a vacuum chamber; and one or more indium oxide, particularly indium tin oxide (ITO), containing targets within the vacuum chamber for sputtering a transparent conductive oxide layer.
  • the apparatus further includes a gas distribution system for providing processing gases within the vacuum chamber.
  • a controller is provided connected to the gas distribution system and configured to execute a program code, wherein upon execution of the program code a method according to embodiments described herein is conducted.
  • FIG. 1 shows a schematic view of an apparatus for forming a light emitting structure according to embodiments described herein;
  • FIG. 2 shows a flow chart illustrating a method for forming a light emitting structure according to embodiments as described herein;
  • FIG. 3 shows a schematic view of a light emitting structure according to embodiments described herein;
  • FIG. 4 shows a flow chart illustrating a method for forming a light emitting structure according to embodiments as described herein; and FIG. 5 shows a schematic view of a first reflective electrode portion of a light emitting structure according to embodiments described herein.
  • process atmosphere may be understood as an atmosphere inside a processing chamber, particularly inside a vacuum processing chamber of an apparatus for depositing a layer.
  • the “process atmosphere” may have a volume which is specified by the volume inside the processing chamber.
  • H 2 stands for hydrogen, in particular for gaseous hydrogen.
  • the abbreviation “0 2 " stands for oxygen, in particular for gaseous oxygen.
  • electrode portion may be understood as a layer sequence including one or more layers.
  • the electrode portion as used herein may be used as an electrode, in particular either as a cathode or an anode.
  • the electrode portion as described herein may be used as a cathode or an anode in a light emitting structure, such as an LED, an OLED, or the like.
  • a "reflective electrode portion” may be understood as an electrode portion having reflective properties, especially reflective properties for incident light on the reflective electrode portion.
  • an electrode portion being a reflective electrode portion may mean that the reflective electrode portion has a reflectivity of light of less than 100%, typically a reflectivity larger than 85%, more typically larger than 90% and even more typically larger than 95%. The same may apply for a reflective layer referred to herein.
  • a reflective electrode portion or a reflective layer as used herein may be understood as a layer or portion wherein the amount of reflected light is larger than the amount of transmitted light
  • the term "transparent conductive metal oxide layer” may be understood as a metal oxide layer having at least partly conductive and transparent properties.
  • the metal in the transparent conductive metal oxide layer may result in a defined conductivity of the respective layer.
  • the transparent conductive metal oxide layer may have transmitting properties for incident light, in particular for visible light.
  • the transparent conductive metal oxide layer may have a transmission of light of less than 100%, such as typically larger than 85%, more typically larger than 90%, and even more typically larger than 95%.
  • a layer being described as being transparent may also have reflective properties, such as by reflecting a first amount of the incident light and by transmitting a second amount of the incident light.
  • a transparent layer may be understood as a layer with a low absorption.
  • a transparent layer may be understood as a layer wherein the amount of transmitted light is larger than the amount of reflected light.
  • FIG. 1 a schematic view of an apparatus 200 for depositing one or more layers of a light emitting structure on a substrate according to embodiments described herein is shown.
  • the layer deposition of a light emitting structure may be used for display manufacturing according to embodiments described herein.
  • the apparatus for depositing a layer for display manufacturing includes a vacuum chamber 210.
  • one or more targets 220a, 220b are positioned.
  • the targets may include one or more materials for forming a reflective electrode portion on a substrate.
  • the targets may include a material for forming a metal oxide layer on a substrate, in particular a transparent conductive oxide layer, such as indium oxide, particularly indium tin oxide (ITO).
  • the targets are adapted for sputtering the target material (e.g. a transparent conductive metal oxide layer) on the substrate 300.
  • the apparatus 200 further includes a gas distribution system 230 for providing a process gas to the vacuum chamber.
  • a controller 240 is provided connected to the gas distribution system 230 and configured to execute a program code. Upon execution of the program code, the method for forming a light emitting structure, e.g. for display manufacturing, as described herein may be conducted.
  • the vacuum chamber 210 is limited by chamber walls 211 and may be connected to the gas distribution system 230 at a first gas inlet 231 for H 2 and a second gas inlet 232 for 0 2 .
  • the first gas inlet 231 may be connected to the gas distribution system 230 via a first conduit having a first mass flow controller 234 configured for controlling an amount of H 2 provided to the process atmosphere, for example a first valve.
  • the second gas inlet 232 may be connected to the gas distribution system 230 via a second conduit having a second mass flow controller 235 configured for controlling an amount of 0 2 provided to the process atmosphere, for example a second valve.
  • the gas distribution system may include a first gas source for providing H 2 and a second gas source for providing 0 2 .
  • the apparatus as described herein may be configured for providing H 2 and 0 2 independently from each other, such that the H 2 content, the 0 2 content and/or the ratio of the H 2 content and the 0 2 content of the process atmosphere 222 within the vacuum chamber 210 can be controlled.
  • the gas distribution system may include a third gas source for providing an inert gas.
  • the third gas source may be configured for providing the inert gas (such as Ar) to the process atmosphere separately form H 2 and/or 0 2 , for example through a separate third gas inlet which connects the vacuum chamber with the third gas source of the gas distribution system.
  • the gas distribution system may include an inert gas flow controller (not shown) configured for controlling an amount of inert gas provided to the process atmosphere.
  • the third gas source may be employed for providing an inert gas/H 2 mixture which can be provided to the process atmosphere inside the vacuum chamber through the first gas inlet. Additionally or alternatively, the third gas source may be employed for providing an inert gas/0 2 mixture which can be provided to the process atmosphere inside the vacuum chamber through the second gas inlet.
  • the gas distribution system 230 may include pumps and/or compressors for providing the defined pressure of the process atmosphere inside the vacuum chamber.
  • the gas distribution system may include pumps and/or compressors for providing the respective pressure of H2, and/or for providing the respective pressure of 0 2 and/or for providing the respective pressure of inert gas according to embodiments described herein.
  • the vacuum chamber 210 may include an outlet port 233, connected to an outlet conduit, which is in fluid connection with an outlet pump 236 for providing the vacuum in the vacuum chamber 210.
  • a first deposition source 223a and a second deposition source 223b may be provided within the vacuum chamber 210.
  • the deposition sources can, for example, be rotatable cathodes having targets of the material to be deposited on the substrate.
  • the target may be a metal oxide containing target, in particular a transparent conductive metal oxide, and further in particular an indium tin oxide (ITO) containing target, particularly an ITO 90/10 containing target.
  • the cathodes can be rotatable cathodes with magnet assemblies 221a, 221b therein.
  • magnetron sputtering may be conducted for depositing a layer for a light emitting structure.
  • the cathodes of the first deposition source 223a and the second deposition source 223b can be connected to a power supply 250.
  • the power supply 250 may be connected to the controller 240 such that the power supply can be controlled by the controller, as exemplarily shown in FIG. 1.
  • the cathodes may be connected to an AC (alternating current) power supply or a DC (direct current) power supply.
  • AC alternating current
  • DC direct current
  • sputtering from an indium oxide target e.g. for a transparent conductive metal oxide film
  • the first deposition source 223a may be connected to a first DC power supply
  • the second deposition source 223b may be connected to a second DC power supply.
  • the second deposition source 223b and the second deposition source 223b may have separate DC power supplies.
  • DC sputtering may include pulsed- DC sputtering, particularly bipolar-pulsed-DC sputtering.
  • the power supply may be configured for providing pulsed-DC, particularly bipolar-pulsed-DC.
  • the first DC power supply for the first deposition source 223a and the second DC power supply for the second deposition source 223b may be configured for providing pulsed-DC power.
  • FIG. 1 a horizontal arrangement of deposition sources and substrate 300 to be coated is shown. In some embodiments, which may be combined with other embodiments disclosed herein, a vertical arrangement of deposition sources and substrate 300 to be coated may be used.
  • a sensor 270 may be provided in the vacuum chamber 210 for measuring the composition of the process atmosphere 222.
  • the sensor 270 may be configured for measuring the content of inert gas, H 2 , 0 2 and residual gas within the respective content ranges as specified herein.
  • the sensor 270 may be connected to a controller 240 for adjusting the amounts of the process gases dependent on the sensed composition in the vacuum chamber 210.
  • the senor 270, gas distribution system 230 including the first mass flow controller 234 and the second mass flow controller 235, and outlet pump 236 may be connected to a controller 240.
  • the controller 240 may control the first mass flow controller 234, the second mass flow controller 235, the inert gas flow controller and the outlet pump 236, so that an atmosphere with a composition as described herein is created and maintained in the vacuum chamber 210. Accordingly, all constituents of a selected process atmosphere with a composition as described herein may be controlled, especially independently from each other.
  • the controller may be configured for controlling the gas distribution system such that the flow of H 2 , the flow of 0 2i and the flow of inert gas can be controlled independently from each other for establishing a process atmosphere with a selected composition as described herein. Accordingly, the composition of a selected process atmosphere can be adjusted very accurately.
  • a substrate 300 may be disposed below the deposition sources, as exemplarily shown in FIG.l .
  • the substrate 300 may be arranged on a substrate support 310.
  • a substrate support device for a substrate to be coated may be disposed in the vacuum chamber.
  • the substrate support device may include conveying rolls, magnet guiding systems and further features.
  • the substrate support device may include a substrate drive system for driving the substrate to be coated in or out of the vacuum chamber 210.
  • FIG. 2 shows a block diagram illustrating a method for forming a light emitting structure on a substrate according to embodiments as described herein.
  • the light emitting structure may be an OLED structure, and may in some embodiments be a top-emitting OLED structure.
  • the method 100 includes in block 101 forming a first reflective electrode portion, forming an emitter layer on or over the first reflective electrode portion and forming a second electrode portion over the emitter layer.
  • the first reflective electrode portion, the emitter layer, and the second electrode portion may be formed by sputtering including in particular sputtering a transparent conductive metal oxide layer (e.g. from an indium oxide containing target) in a process atmosphere.
  • the target may be an indium tin oxide (ITO) containing target or an Indium Zinc oxide (IZO) containing target.
  • the first reflective electrode portion, the emitter layer, and the second electrode portion may be formed consecutively one over the other.
  • forming the first reflective electrode portion and/or the second electrode portion includes depositing a first transparent conductive metal oxide layer, a reflective metal layer and a second transparent conductive metal oxide layer in a process atmosphere including process gases.
  • the emitter layer may be an emissive electroluminescent layer, e.g. containing an organic compound.
  • the organic compound is a compound emitting light in response to an electric current.
  • the organic compound may be an organic semiconductor.
  • the emitter layer is arranged between the first reflective electrode portion and the second electrode portion, especially for creating a display.
  • the process atmosphere includes H 2 , 0 2 and an inert gas.
  • the inert gas may be selected from the group consisting of helium, neon, argon, krypton, xenon or radon.
  • the inert gas may be argon (Ar). It can be understood that the content of the constituents of the process atmosphere according to embodiments described herein may add up to 100%. In particular, the content of H 2 , 0 2 and inert gas may add up to 100% of the process atmosphere.
  • the method 100 includes in block 102 setting the light absorption properties of the first reflective electrode portion to a light absorption of typically less than 6%, more typically less than 5%, even more typically less than 3%, and even more typically less than 2% of the incident light by controlling the ratio of 0 2 content and H 2 content of the process gas. Additionally or alternatively to the absorption of the first reflective electrode portion, the absorption properties of the first and/or second transparent conductive metal oxide layer may be set to be less than 6%, more typically less than 5%, even more typically less than 3%, and even more typically less than 2% of the incident light by controlling the ratio of 0 2 content and H 2 content of the process gas.
  • the absorption of the first and/or second transparent conductive layer may be less than 4% of the incident light.
  • the reflective metal layer may have a reflectance of typically at least 95%, more typically at least 96%, and even more typically at least 98%.
  • the control of the 0 2 content and H 2 content may be done by the gas inlets 231 and 232 as exemplarily shown in FIG. 1.
  • the first mass flow controller 234 and the second mass flow controller 235 may control the separate gas inlets for H 2 and 0 2 .
  • the first mass flow controller 234 and the second mass flow controller 235 may be connected to controller 240.
  • the controller 240 may be configured for adjusting the mass flow of the H 2 and 0 2 inlet for influencing the light absorption of the first reflective electrode portion of the light emitting structure, e.g.
  • the light absorption of the first reflective electrode definition may be the counterpart of the sum of the transmission and the reflectance of the first reflective electrode.
  • the light absorption as used herein may be understood as the energy introduced to the first reflective electrode by an incident light, in particular the energy of electromagnetic radiation.
  • absorbed energy of the incident light may be transformed into internal energy of the first reflective electrode (e.g. thermal energy, working energy, reactive energy or the like).
  • the light absorption of the incident light may be understood as the amount or portion of the incident light being not reflected or transmitted by the first reflective electrode. In other words, the light absorption of the incident light may be understood as the amount or portion of the incident light staying within the first reflective electrode.
  • the light absorption of less than 6% refers to the light absorption of visible light (such as light in the range between about 380 nm and about 780 nm).
  • the light absorption of less than 6% may refer to the light absorption of light having a wavelength of about 550 nm.
  • reducing and/or minimizing the absorption to a value of less than 6% is done by optimizing and tuning the ratio of the H 2 and the 0 2 content in the process gas of the deposition process.
  • Oxygen has an impact on crystallinity during the transparent conductive metal oxide layer process and helps to reduce the absorption of the transparent conductive metal oxide layer.
  • a comparatively high hydrogen content i.e. a higher content than described in some embodiments herein makes the transparent conductive metal oxide layer more amorphous. Increasing the amorphous properties of the second transparent conductive metal oxide layer is not beneficial for a low absorption rate of the incident light.
  • the ratio of H 2 and 0 2 in the process gas has an influence on the surface roughness of the single layers.
  • the lower absorption of the second transparent conductive metal oxide layer allows using a thinner reflective metal layer between the first transparent conductive metal oxide layer and the second transparent conductive metal oxide layer, especially compared to metal layer thicknesses as used in known light emitting structures.
  • a thinner reflective metal layer can be deposited having a lower surface roughness. The lower surface roughness compared to known light emitting structures result in a higher reflection of the first reflective electrode portion.
  • the light emitting structure formed by the method according to embodiments described herein may be a top emitting structure, in particular a top emitting OLED structure.
  • FIG. 3 shows an example of a light emitting structure 500 according to embodiments described herein.
  • a substrate 501 is used in the light emitting structures 500.
  • a substrate having a low transparency or being not transparent is used in top emitting OLED structures.
  • a reflective or opaque substrate may be used.
  • the range of substrates that can be used for a top emitting OLED is large.
  • the substrates may range from glass or plastic substrates to metallic foils or even silicon substrates such as silicon wafers or the like.
  • a first reflective electrode portion 400 may be formed on the substrate 501 of the light emitting structure 500.
  • the first reflective electrode portion 400 may be used as an anode.
  • an emitter layer 502 is formed on or over the first reflective electrode.
  • the emitter layer (or emissive layer) may include an organic compound (such as organic semiconductors) that emits light in response to an electric current.
  • the light emitting structure according to embodiments described herein may include a conductive layer 503 formed next to the emitter layer 502 (e.g. being formed as a bilayer structure with the emitter layer).
  • the light emitting structure 500 includes a second electrode portion 504 over or on the emitter layer 502. According to some embodiments, the second electrode portion 504 may be used as a cathode. In some embodiments, the light emitting structure 500 includes a sealing layer 505 over the second electrode portion. For instance, the sealing layer may be a transparent material, such as a glass sealing layer.
  • the first reflective electrode may be the electrode being nearer to the substrate than the second electrode of the light emitting structure. According to some embodiments, the first reflective electrode may be the electrode on or directly adjacent to the substrate.
  • the anode being formed on the substrate as a first electrode is beneficially a reflective anode.
  • Having a reflective anode, such as the first reflective electrode portion in a light emitting structure (in particular a top emitting structure) helps to concentrate and direct the incident light in the right direction. Reducing the absorption of the transparent conductive metal oxide layer(s) and the reflectance of the reflective metal layer increases the efficiency of the light emitting structure and yields more light being emitted from the light emitting structure.
  • the light emitted from the light emitting structure 500 is shown as arrow 506. It can exemplarily be seen in FIG. 3 that the light emitted from the light emitting structure 500 leaves the light emitting structure 500 in a direction away from the substrate 501.
  • setting the light absorption of the first and/or second transparent conductive metal oxide layer of the first reflective electrode portion to less than 6%, more typically less than 5%, even more typically less than 3%, and even more typically less than 2% is dependent on the ratio of the 0 2 content and H 2 content of the process gases.
  • the ratio of the 0 2 content and H 2 content of the process gases is adjusted for reducing the light absorption, and in particular for minimizing the light absorption of the first reflective electrode portion.
  • the 0 2 content and H 2 content of the process gases may be set to a range between a H 2 content of typically less than 2%.
  • the 0 2 content is adjusted to a value of typically between 1% and about 5% (or typically less than 5%) in the process atmosphere.
  • the H 2 content may be controlled to be typically between about 0.01% and about 3%, more typically between 0.01 % and about 2%, and even more typically between about 0.1% and about 1.5%.
  • the 0 2 content is controlled to a value of typically between 0.5% and about 6%, more typically between about 1% and about 5%, and even more typically between about 1.5% and about 4%. In one embodiment, the 0 2 content is about 2.5% and the H 2 content is 0 %. According to some embodiments, the ratio between H 2 and 0 2 content may be adapted to the respective application. In one embodiment, the 0 2 content is reduced when reducing the H 2 content. According to some embodiments, the absorption can be reduced when less H 2 and higher 0 2 is used. In some embodiments, the H 2 content may be increased by up to about 20%.
  • Fig. 4 shows a flow chart of a method 100 for forming a light emitting structure according to some embodiments described herein.
  • the method 100 may have the same features as described with respect to FIG. 2, especially with regard to blocks 101 and 102.
  • the method 100 of FIG. 4 includes in block 103 setting the light absorption properties of the first reflective electrode layer to a light absorption of less than 6% of the incident light by controlling the ratio of 0 2 content and H 2 content of the process gas by providing a defined flow of H 2 and 0 2 to the process gases.
  • the method may include an oxygen flow of typically between about 1 seem and about 10 seem, more typically between about 2 seem and about 10 seem, and even more typically between about 2 seem and about 8 seem, especially during deposition of the transparent conductive metal oxide layer.
  • the values of the flow rate of oxygen may lead to a low absorption of the transparent conductive metal oxide layer.
  • a flow rate of up to 10 seem oxygen may be used for improving the resistance of the reflective electrode, e.g by the higher crystallinity of the transparent conductive metal oxide.
  • the light emitting structure (or parts of the light emitting structure such as the first reflective electrode portion) may be subjected to an increased temperature (increased compared to ambient temperature) for annealing purposes.
  • the light emitting structure, or parts of the light emitting structure may be subjected to a temperature of typically about 150°C to about 300°C, more typically to about 200°C to about 280°C, and even more typically to about 200°C and about 260°C.
  • the light emitting structure according to embodiments described herein or parts of the light emitting structure according to embodiments described herein is heated to a temperature of about 200°C, 230°C, or 260°C.
  • FIG. 5 shows an embodiment of a first reflective electrode portion 400 according to embodiments described herein.
  • the first reflective electrode portion 400 includes a first (transparent) conductive metal oxide layer 401, a reflective metal layer 402, and a second transparent conductive metal oxide layer 403.
  • the absorption of the first and/or second transparent conductive layer is less than typically 7%, more typically less than 5%, even more typically less than 3%, and even more typically less than 2% of the incident light.
  • the absorption of the first and/or second transparent conductive layer is less than 4% of the incident light.
  • the reflective metal layer may have a reflectance of typically at least 95%, more typically at least 96%, and even more typically at least 98%.
  • the reflectance of the reflective metal layer may be influenced by the sputtering power for depositing the reflective metal layer.
  • the depositing of the reflective metal layer may be performed with a sputter power of typically between 4 KW and 15 kW, more typically between 5 kW and 15 kW, and even more typically between 6kW and 12 kW.
  • a higher power may contribute to a lower absorption.
  • the arrow indicates the incident light 410 on the first reflective electrode portion 400.
  • the incident light 410 may come from the emitter layer of the light emitting structure.
  • the incident light 410 is partly reflected by the second transparent metal oxide layer 403 as first reflected light 411.
  • the size of the arrows is an indication for the amount of the light. For instance, a small amount of the incident light 410 is reflected by the second transparent conductive metal oxide layer 403. A large (or the larger) amount of the incident light 410 is transmitted through the second transparent metal oxide layer 403 as transmitted light 412.
  • the transmitted light 412 hits the reflective metal layer 402 and is reflected as second reflected light 413.
  • the size of the incident light 410 and sum of the size of the first reflected light 411 and the second reflected light 413 is approximately the same.
  • the absorption of the first reflective electrode portion 400 is approximately 0% in the example shown in FIG. 5.
  • FIG. 5 shows that the second transparent metal oxide layer 403 has partly reflective properties and partly transmitting properties to the incident light.
  • the second transparent metal oxide layer 403 has mainly transmitting properties, with a small reflective portion.
  • the reflective metal layer 402 may have a thickness 420 of between typically about 700 A and about 1500 A, more typically between about 700 A and about 1200 A, and even more typically between about 800 A and about 1000 A.
  • the layer thickness of the reflective metal layer 402 may be chosen small compared to known light emitting structures. For instance, the thickness 420 of the reflective metal layer 402 may be between 700 A and 1000 A.
  • the thickness of the reflective metal layer may be less than 850 A. In one embodiment, the reflective metal layer according to embodiments described herein can provide a reflectance of larger than 94% at a thickness of about 850 A. The lower thickness of the reflective metal layer according to embodiments described herein compared to metal layers of known structures is possible in particular due to the improved reflective properties in view of the above discussed ratio of the process gases.
  • the reflective metal layer in a light emitting structure may include a metal alloy.
  • the metal in the reflective metal layer of the first electrode portion may be Ag, and/or an alloy including Ag, such Ag containing Ta, Al, Pd, Au, Cu, Ti, Cr, Mo, Ni, Nb, Ru and the like.
  • the metal includes an amount between about 0.1 wt% to about 3wt% of an alloy metal.
  • the transparent conductive metal oxide layer may be chosen from the group consisting of: indium tin oxide (ITO), Indium Zinc oxide (IZO), fluorine tin oxide (FTO), aluminum doped zinc oxide (AZO), and antimony tin oxide (ATO).
  • the transparent conductive metal oxide layer may be replaced by a conductive polymer, metal grids, carbon nanotubes, graphene, nanowire meshes, ultra-thin metal films and the like.
  • the layers of the first reflective electrode portion, such as the first and/or second transparent metal oxide layer and/or the reflective metal layer may have a defined roughness.
  • the roughness may be smaller than in known light emitting structures, e.g. by the smaller thickness of the reflective metal layer (which is - for instance - possible due to the increased reflectivity of the reflective metal layer by controlling the ratio of the H 2 and 0 2 content in the process gas).
  • the roughness R max of the reflective metal layer is less than the roughness of the first and/or second transparent metal oxide layer, in particular the second transparent metal oxide layer.
  • the roughness R max of the reflective metal layer of the first reflective electrode may typically be less than 2 nm, more typically less than 1.5 nm.
  • adding an alloy to the metal of the reflective metal layer may have a beneficial effect on the surface roughness, such as a decreasing surface roughness of the reflective metal layer.
  • a good coverage of the reflective metal layer with a layer of a transparent metal oxide layer may increase the beneficial reflective properties between the reflective metal layer and the transparent metal oxide layer.
  • a good coverage of the reflective metal layer may prevent oxidizing of the metal, which may be the cause for some defects and, especially, for a reduced reflection of the reflective metal layer.
  • the content of inert gas which is in the process atmosphere may be from a range between a lower limit of 85%, particularly a lower limit of 90%, more particularly a lower limit of 95%, and an upper limit of 97%, particularly an upper limit of 98.0%, more particularly an upper limit of 99%.
  • the process atmosphere consists of H 2 , 0 2 , an inert gas and a residual gas.
  • the content of H 2 , 0 2 and inert gas in the process atmosphere consisting of H 2 , 0 2 and inert gas may be selected from a range between a respective lower limit and a respective upper limit as described herein.
  • the residual gas may be any impurity or any contaminant in the process atmosphere.
  • the content of residual gas may be from 0.0%> to 1.0% of the process atmosphere.
  • the content of residual gas is 0.0%> of the process atmosphere. It may be understood that the content of the constituents of the process atmosphere according to embodiments described herein may add up to 100%.
  • the content of H 2 , 0 2 , inert gas and residual gas may add up to 100% of the process atmosphere in the case that residual gas is present in the process atmosphere or in the case that the process atmosphere contains no residual gas, i.e. the content of the residual gas is 0.0%>.
  • the total pressure of the process atmosphere may be from a range between a lower limit of 0.2 Pa, particularly a lower limit of 0.3 Pa, more particularly a lower limit of 0.4 Pa, and an upper limit of 0.6 Pa, particularly an upper limit of 0.7 Pa, more particularly an upper limit of 0.8 Pa.
  • the total pressure of the process atmosphere may be 0.3 Pa.
  • all constituent gases of the process atmosphere may be mixed prior to establishing the process atmosphere in the vacuum chamber. Accordingly, prior to sputtering or during sputtering the transparent conductive oxide layer, all constituent gases of the process atmosphere may be supplied to the vacuum chamber through the same gas showers. In particular, depending on the selected composition of the process atmosphere as described herein, H 2, 0 2 and inert gas may be supplied to the vacuum chamber through the same gas showers.
  • the gaseous constituents of a selected process atmosphere may be mixed in a mixing unit before the gaseous constituents of the selected process gas are provided into the vacuum chamber via the gas showers.
  • the apparatus for depositing a layer may include a mixing unit for mixing the gaseous constituents of the selected process gas before the gaseous constituents of the selected process gas are provided into the vacuum chamber via the gas showers. Accordingly, a very homogenous process atmosphere can be established in the vacuum chamber.
  • an annealing procedure may be performed, for example in a temperature range from 200°C to 260°C.
  • H 2 may be provided to the process atmosphere in an inert gas/H 2 mixture.
  • H 2 By providing H 2 to the process atmosphere in an inert gas/H 2 mixture, the risk of flammability and explosion of H 2 in the gas distribution system can be reduced or even eliminated.
  • 0 2 is provided to the process atmosphere in an inert gas/0 2 mixture.
  • the method of manufacturing a light emitting structure may further include patterning the deposited layer(s), for example by etching, in particular wet chemical etching. Further, the method of manufacturing a layer according to embodiments described herein may include annealing the layer, for example after patterning.
  • the light emitting structure manufactured by the method for forming a light emitting structure according to embodiments described herein may be employed in an electronic device, particularly in an opto-electronic device. Accordingly, by providing an electronic device with a light emitting structure according to embodiments described herein, the quality of the electronic device can be improved.
  • the method for forming a light emitting structure, e.g. for display manufacturing, and an apparatus therefore according to embodiments described herein provide for tuning TFT display properties during manufacturing, in particular with respect to high quality and low cost.

Abstract

L'invention concerne un procédé de formation d'une structure émettant de la lumière (500) sur un substrat (501). Le procédé consiste à former une première partie d'électrode réfléchissante (400), former une couche émettrice (502) sur la première partie d'électrode réfléchissante et former une seconde partie d'électrode (504) sur la couche émettrice. La formation de la première partie d'électrode réfléchissante (400) consiste à déposer une première couche d'oxyde métallique conductrice transparente (401), une couche métallique réfléchissante (402) et une seconde couche d'oxyde métallique conductrice transparente (403) dans une atmosphère de traitement comprenant des gaz de traitement. Le procédé comprend en outre le réglage des propriétés d'absorption de lumière de la première partie d'électrode réfléchissante (400) à une valeur d'absorption de lumière inférieure à 6 % de la lumière incidente, en agissant sur le rapport de la teneur en O2 et de la teneur en H2 du gaz de traitement.
PCT/EP2016/065826 2016-07-05 2016-07-05 Procédé de formation d'une structure émettant de la lumière et appareil correspondant WO2018006944A1 (fr)

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CN201690001396.4U CN213266673U (zh) 2016-07-05 2016-07-05 发光结构和用于沉积发光结构的电极部分的设备
PCT/EP2016/065826 WO2018006944A1 (fr) 2016-07-05 2016-07-05 Procédé de formation d'une structure émettant de la lumière et appareil correspondant

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