WO2016172903A1 - 一种空间相位调制器及其制备方法 - Google Patents

一种空间相位调制器及其制备方法 Download PDF

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WO2016172903A1
WO2016172903A1 PCT/CN2015/077918 CN2015077918W WO2016172903A1 WO 2016172903 A1 WO2016172903 A1 WO 2016172903A1 CN 2015077918 W CN2015077918 W CN 2015077918W WO 2016172903 A1 WO2016172903 A1 WO 2016172903A1
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Prior art keywords
layer
substrate
phase modulator
spatial phase
liquid crystal
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PCT/CN2015/077918
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English (en)
French (fr)
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宗良佳
初大平
杨海宁
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华为技术有限公司
剑桥企业有限公司
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Application filed by 华为技术有限公司, 剑桥企业有限公司 filed Critical 华为技术有限公司
Priority to PCT/CN2015/077918 priority Critical patent/WO2016172903A1/zh
Priority to EP15890283.3A priority patent/EP3282311B1/en
Priority to CN201580079569.4A priority patent/CN107835957B/zh
Publication of WO2016172903A1 publication Critical patent/WO2016172903A1/zh
Priority to US15/797,795 priority patent/US10942397B2/en

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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Definitions

  • the present invention relates to the field of communications, and in particular, to a spatial phase modulator and a method of fabricating the same.
  • LCoS Liquid Crystal on Silicon
  • a spatial phase modulator is a matrix liquid crystal device based on a reflection mode and having a very small size.
  • a monolithic spatial phase modulator consists of millions of pixels, each of which is a few or tens of microns in size.
  • the different functions of the spatial phase modulator are achieved by controlling the voltage value at each pixel.
  • the initial application of the spatial phase modulator is mainly in the display field. Compared with other liquid crystal display technologies, the display device based on the spatial phase modulator is easier to achieve high resolution and sufficient color performance.
  • the spatial phase modulator has been gradually applied to the field of optical communication: including WSS, dispersion compensation, optical shaping and so on.
  • LCoS is used as an SLM (Spatial Phase Modulator) to achieve phase control of spatial light, thereby implementing the corresponding functions of the spatial phase modulator.
  • SLM Spatial Phase Modulator
  • the conventional spatial phase modulator is shown in FIG. 1 , and its physical structure includes a surface glass layer 1 , a common ITO electrode layer 2 , an upper alignment guiding layer 3 , a liquid crystal molecular layer 4 , and a lower alignment guiding layer 5 from top to bottom.
  • aluminized electrode in the active area of the spatial phase modulator, the size corresponding to the spatial phase adjustment
  • Each pixel of the controller pixel. Since the voltage value applied to each pixel is different, a gap area is needed between adjacent pixels to isolate the electric field interference between the two pixels, while the free area
  • the material is silicon and is substantially non-reflective for incident light. In this way, when light is incident on the backplane of the spatial phase modulator, most of the reflection (usually >96%) is obtained on the portion of the aluminized electrode, and most of the light incident on the gap is absorbed. Loss. When the gap is reduced, the device reflectivity can be improved, but the crosstalk of two adjacent pixel points is increased due to the edge field effect, which affects device performance.
  • the device loss of the spatial phase modulator is even more important when applied in the field of communications.
  • the filling rate defined as the ratio of the electrode area to the entire pixel area
  • the reflectance of the device is 60%.
  • the loss due to the reflectance alone reaches 2.2 dB. Therefore, when a spatial phase modulator is used as an optical switching engine for an optical module (such as WSS), the loss caused by the spatial phase modulator component will be about 3 dB, while the conventional MEMS optical engine has a loss of ⁇ 1 dB. Therefore, based on the optical device of the spatial phase modulator, performance will be affected in terms of device loss.
  • an optical module such as WSS
  • the structure on the lower substrate of the spatial phase modulator includes: a silicon-based back plate 7, an electrode layer 6 disposed on the silicon-based back plate, an insulating dielectric glass layer 8 disposed on the electrode layer 6, and a glass layer disposed on the insulating medium
  • the introduction of the insulating dielectric glass layer 8 brings certain difficulty to the process, for the following reasons: the spatial phase modulator device has a layer of polymer material between the liquid crystal molecule (LC) layer and the substrate.
  • LC liquid crystal molecule
  • Alignment guide Layer which is used to control the deflection direction of the LC molecules and the deflection speed to ensure stable operation of the spatial phase modulator device.
  • the alignment guiding layer is realized on the silicon substrate by mechanical friction, which has no influence on the overall performance of the spatial phase modulator and the subsequent process flow.
  • the alignment guiding layer is easily applied to the insulating dielectric glass layer during the fabrication process. Cause damage, which affects yield and device performance.
  • the invention provides a spatial phase modulator and a preparation method thereof for improving the yield of a spatial phase modulator and simplifying the manufacturing process of the airborne phase modulator.
  • a spatial phase modulator comprising: a first substrate and a second substrate of the pair of boxes, and a liquid crystal layer disposed between the first substrate and the second substrate;
  • the first substrate is disposed with a transparent electrode layer and a first alignment guiding layer on one side of the liquid crystal layer along a direction in which the first substrate is directed to the second substrate; and the first substrate is directed along the second substrate a direction in which the second substrate is laminated on one surface of the liquid crystal layer with an electrode layer and an insulating dielectric glass layer, the insulating dielectric glass layer having an oblique sawtooth structure toward one surface of the liquid crystal layer, and the transparent electrode layer and the
  • the electrode layer is energized to form an electric field
  • the oblique sawtooth structure acts as a second alignment guiding layer and the first alignment guiding layer cooperates to control the deflection direction of the liquid crystal molecules of the liquid crystal layer.
  • the insulating dielectric glass layer includes at least one pair of oxide layers having different refractive indices.
  • the oxide of the oxide layer is ZrO 2 , SiO 2 or TiO 2 .
  • the oblique sawtooth structure is disposed on an oxide layer adjacent to the liquid crystal layer.
  • the angle of inclination of each of the oblique saw teeth is between 3° and 15°.
  • the first substrate is a glass substrate
  • the second substrate is a silicon-based back plate.
  • the electrode layer is an aluminized electrode layer.
  • a method of fabricating a spatial phase modulator comprising the steps of:
  • the first substrate and the second substrate are paired with the liquid crystal layer, and the first alignment guiding layer and the oblique sawtooth structure face each other when the box is placed.
  • the forming an electrode layer and an insulating dielectric glass layer on the second substrate, and forming a diagonal sawtooth structure on the surface of the insulating dielectric glass layer is specifically:
  • the oblique angle of the formed oblique sawtooth is between 3° and 10°.
  • the method further includes: forming an oxide layer having a different refractive index alternately on the formed electrode layer, according to the spatial phase modulator Operating wavelength and characteristics requirements, optimize the material and thickness of each oxide layer The number of cycles and the skewed tooth width.
  • 0.5H 0.5L when the at least one pair of oxide layers having different refractive indices are specifically disposed, (0.5H 0.5L) can be used: n , (0.5H L 0.5H) ⁇ n , H (L H) ⁇ n way to prepare.
  • a spatial phase modulator according to the first aspect, a method of fabricating a spatial phase modulator provided by the second aspect.
  • the spatial phase modulator can form the second alignment guiding layer when the insulating dielectric glass layer is formed by forming the oblique sawtooth structure on the insulating dielectric glass layer, which simplifies the spatial phase modulator.
  • the manufacturing step, and compared with the prior art, the spatial phase modulator provided by the embodiment forms a diagonal sawtooth structure when forming the insulating dielectric glass layer during the manufacturing process, thereby avoiding the production of the spatial phase modulator in the prior art.
  • the alignment guiding layer is formed by mechanical friction on the insulating dielectric glass layer, damage to the insulating dielectric glass layer is caused, thereby improving the yield of the spatial phase modulator and reducing the production difficulty of the inter-air conditioner modulator. , simplifying the production process.
  • FIG. 1 is a schematic structural view of a spatial phase modulator in the prior art
  • FIG. 2 is a schematic structural view of a silicon-based backplane of a spatial phase modulator in the prior art
  • FIG. 3 is a schematic structural diagram of a spatial phase modulator according to an embodiment of the present invention.
  • 4a-4b are flow charts of preparing an insulating dielectric glass layer according to an embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a spatial phase modulator according to an embodiment of the present disclosure.
  • FIG. 6 is a simulation diagram of reflectance of the spatial phase modulator shown in FIG. 5;
  • Figure 7 is a graph showing the response time of the spatial phase modulator shown in Figure 5.
  • FIG. 3 is a schematic structural diagram of a spatial phase modulator according to an embodiment of the present invention.
  • Embodiments of the present invention provide a spatial phase modulator including: a first substrate 70 and a second substrate 10 of a pair of boxes, and a liquid crystal layer disposed between the first substrate 70 and the second substrate 10 40; wherein, in a direction in which the first substrate 70 is directed to the second substrate 10, the first substrate 70 is disposed with a transparent electrode layer 60 and a first alignment guiding layer 50 disposed on one surface of the liquid crystal layer 40; In the direction of a substrate 70, the electrode substrate 20 and the insulating dielectric glass layer 30 are laminated on one surface of the second substrate 10 facing the liquid crystal layer 40.
  • the insulating dielectric glass layer 30 has an oblique sawtooth structure 321 on one side of the liquid crystal layer 40, in the transparent electrode layer.
  • the oblique sawtooth structure 321 serves as a second alignment guiding layer and the first alignment guiding layer 50 cooperates to control the deflection direction of the liquid crystal molecules of the liquid crystal layer 40.
  • the second alignment guiding layer can be formed when the insulating dielectric glass layer 30 is formed, which simplifies.
  • the spatial phase modulator provided by the embodiment forms the oblique sawtooth structure 321 when the insulating dielectric glass layer 30 is formed during the manufacturing process, thereby avoiding the existing
  • the spatial phase modulator is produced in the technology, the insulating dielectric glass layer 30 is damaged by the mechanical friction on the insulating dielectric glass layer 30, thereby improving the yield of the spatial phase modulator, and at the same time, It reduces the production difficulty of the inter-air conditioner modulator and simplifies the production process.
  • the tilt angle of the oblique sawtooth can be flexibly changed, and is not affected by the device, thereby effectively improving the switching speed of the spatial phase modulator; specifically, as shown in FIG. 4a and FIG. 4b.
  • 4a and 4b illustrate the formation of an insulating dielectric glass layer 30.
  • the insulating dielectric glass layer 30 includes at least one pair of oxide layers having different refractive indices, as shown in FIG.
  • the pair of oxide layers having different refractive indices are the first oxide layer 31 and the second oxide layer 32, respectively.
  • the oxide of the oxide layer is ZrO2, SiO2 or TiO2, or other oxides.
  • a suitable oxide layer is selected. The thickness, the number of cycles, and the skewed tooth width x first form oxides of the respective layers in the insulating dielectric glass layer 30.
  • the deposition method may be plasma, thermal, electron beam, etc.; when the oblique sawtooth structure 321 is formed, the oblique sawtooth The structure 321 is disposed on an oxide layer adjacent to the liquid crystal layer 40.
  • the second substrate 10 is rotated by an angle on the rotating platform (or the deposition source 80 is rotated by an angle with respect to the second substrate 10) such that there is an angle between the spatial phase modulator and the deposition source 80.
  • the inclination angle is between 3° and 15°, such as 3°, 5°, 7°, 10°, 12°, 14°, 15°, etc.; through plasma/thermal/
  • the evaporation of the electron source completes the deposition of the uppermost layer of the insulating dielectric glass layer 30 to form an oblique sawtooth structure, as shown in FIG. 3, wherein the inclination angle is an angle a, and the angle is between 3° and 10°, such as 3°, 5 Different inclination angles such as °, 7°, and 10°.
  • the oblique sawtooth structure 321 on the insulating dielectric glass layer 30 of the spatial phase modulator provided by this embodiment can adjust the tilt angle as needed, and is not affected by the structure of the device itself, and is convenient to adjust the oblique sawtooth according to actual conditions.
  • the angle of inclination can be seen from the above description that the oblique sawtooth structure 321 on the insulating dielectric glass layer 30 of the spatial phase modulator provided by this embodiment can adjust the tilt angle as needed, and is not affected by the structure of the device itself, and is convenient to adjust the oblique sawtooth according to actual conditions.
  • the angle of inclination can be seen from the above description that the oblique sawtooth structure 321 on the insulating dielectric glass layer 30 of the spatial phase modulator provided by this embodiment can adjust the tilt angle as needed, and is not affected by the structure of the device itself, and is convenient to adjust the oblique sawtooth according to actual conditions.
  • the angle of inclination can be seen from the above description
  • the first substrate 70 is a glass substrate and the second substrate 10 is a silicon-based back plate.
  • the electrode layer 20 is an aluminum-plated electrode layer, and the aluminum-plated electrode layer forms an electric field with the transparent electrode layer 60 to provide an electric field force for the liquid crystal molecules to rotate.
  • the first substrate 70, the transparent electrode layer 60 and the first alignment guiding layer 50 of the spatial phase modulator provided in this embodiment are the same as the spatial phase modulator provided in the above embodiment, and therefore, not shown in FIG. 5 shows only the structure of the specific insulating dielectric glass layer 30, wherein the oxide in the insulating dielectric glass layer 30 is selected from ZrO 2 and SiO 2 , and the number and thickness of the insulating dielectric glass layer 30 are as shown in FIG. 5 . This thickness is optimized based on the operating wavelength and characteristics (eg, reflectivity) of the spatial phase modulator.
  • the application phase band of the spatial phase modulator described in this embodiment is a 1550 nm band.
  • the oxide material of the insulating dielectric glass layer 30 is selected to be ZrO 2 and SiO 2 , wherein ZrO 2 is used as a high refractive index material, and SiO 2 is used as a low refractive index. Rate material.
  • An insulating dielectric glass layer 30 is designed to use (0.5H L 0.5H) ⁇ n structure.
  • the optimized dielectric dielectric glass layer 30 has a structure as shown in FIG.
  • the oblique sawtooth width is 3 mm, so the thickness of the uppermost ZrO 2 material varies between approximately (90 and 350 nm).
  • This layer functions both as the uppermost layer of the insulating dielectric glass layer 30 and also as the second alignment guiding layer to deflect the liquid crystal molecules.
  • the insulating dielectric glass layer 30 For the structure of the insulating dielectric glass layer 30, we carried out simulation, and it can be seen from the results (as shown in FIG. 6) that although the uppermost layer of the insulating dielectric glass layer 30 is an inclined layer, the insulating dielectric glass layer 30 structure corresponding to different positions is caused. The thickness is different, but this has little effect on the reflectivity of the device. The overall device reflectance is >96%, and the reflectance difference between different thicknesses is ⁇ 2%.
  • Figure 7 shows the experimental results of the reflectivity of the device. It can be seen from FIG. 7 that when the spatial phase modulator is added to the structure of the insulating dielectric glass layer 30, the reflectance of the device is increased from 75% to over 95%, and the wavelength dependence is also weakened, and the insulating medium is introduced from 1520 nm to 1570 nm. The wavelength dependence after the glass layer 30 is ⁇ 1%.
  • an embodiment of the present invention further provides a method for preparing a spatial phase modulator, the method comprising the following steps:
  • An electrode layer 20 and an insulating dielectric glass layer 30 are formed on the second substrate 10, and an oblique sawtooth structure 321 is formed on the surface of the insulating dielectric glass layer 30; the oblique sawtooth structure 321 serves as a second alignment guiding layer and the first The alignment guiding layer 50 cooperates to control the deflection direction of the liquid crystal molecules of the liquid crystal layer 40;
  • the first substrate 70 and the second substrate 10 are paired and filled with the liquid crystal layer 40, and when the box is The first alignment guiding layer 50 and the oblique sawtooth structure 321 are opposed to each other.
  • the alignment guide is formed by mechanical friction on the insulating dielectric glass layer 30 when the spatial phase modulator is produced in the prior art.
  • the layer causes damage to the insulating dielectric glass layer 30, thereby improving the yield of the spatial phase modulator, and at the same time, reducing the production difficulty of the inter-air conditioner modulator and simplifying the production process.
  • the inclination angle of the oblique sawtooth structure 321 can be flexibly changed, that is, the inclination angle of the oblique sawtooth structure 321 can be determined according to the degree of inclination of the adjusted insulating medium glass layer, and is not affected by the device, thereby effectively improving the switching speed of the spatial phase modulator.
  • Step 1 forming a transparent electrode layer 60 and a first alignment guiding layer 50 on the first substrate 70;
  • the first substrate 70 is a glass substrate, and the transparent electrode layer 60 is formed on the glass substrate by etching exposure or the like, and an oxide is deposited on the formed transparent electrode layer 60, and the first step is formed by mechanical friction.
  • Step 2 forming an electrode layer 20 and an insulating dielectric glass layer 30 on the second substrate 10, and forming a diagonal sawtooth structure 321 on the surface of the insulating dielectric glass layer 30; the oblique sawtooth structure 321 as a second alignment guiding layer and The first alignment guiding layer 50 cooperates to control the deflection direction of the liquid crystal molecules of the liquid crystal layer 40;
  • the electrode layer 20 is first formed on the first substrate 70; thereafter, at least one pair of oxide layers having different refractive indices are formed on the formed electrode layer 20, and when the last oxide layer is formed, the first layer is formed.
  • the substrate 70 is rotated by a set angle to form a last oxide layer of the oblique sawtooth structure 321 with the oblique direction of the oblique sawtooth facing the alignment direction of the liquid crystal layer 40.
  • the material, thickness, number of cycles, and oblique sawtooth width of each layer of the oxide layer are optimized according to the operating wavelength and characteristics of the spatial phase modulator.
  • at least one pair of different refractive index oxide layer may be: prepared (0.5H 0.5L) ⁇ n, ( 0.5H L 0.5H) ⁇ n, H (L H) ⁇ n mode.
  • H represents a quarter of the optical thickness (high refractive index material) at the C-band (usually taking a center wavelength of 1550 nm);
  • L represents One-quarter optical thickness at 1550 nm (low refractive index material);
  • n represents the number of repetitions; for example, the high refractive index material is A, its refractive index is r1, and the low refractive index material is B, and its refractive index is R2.
  • n represents 3, then (0.5H 0.5L) ⁇ n material order is: ABABAB, A material thickness is (0.5 ⁇ 1550nm) / (4 ⁇ r1), B thickness is (0.5 ⁇ 1550nm ) / (4 ⁇ r2); (0.5HL 0.5H) ⁇ n material order is ABA ABA ABA, wherein the thickness of the A material is (0.5 ⁇ 1550nm) / (4 ⁇ r1), the thickness of B is (1
  • an oxide layer is deposited on the backplane of the spatial phase modulator by evaporation, wherein the deposition method may be plasma, thermal, electron, or the like.
  • the thickness of the layer is determined by controlling the deposition temperature, time and other parameters according to the optimized value of the insulating dielectric glass layer 30; the process repeatedly performs deposition of each layer of the insulating dielectric glass layer 30 (excluding the insulating dielectric glass layer 30 strip) The uppermost oxide layer of the tilt angle); after completion of the oxide layer, as shown in Figure 4b, the silicon-based backplate is rotated an angle on the rotating platform (or the deposition source 80 is rotated at an angle relative to the silicon-based backplate)
  • the angle between the spatial phase modulator and the deposition source 80 is an angle which is consistent with the inclination angle of the oblique sawtooth, and the inclination angle is between 3° and 10°, such as 3°, 5°, 7°, and 10°. Different inclination angles; deposition of the uppermost layer
  • Step 3 The first substrate 70 and the second substrate 10 are paired and filled with the liquid crystal layer 40.
  • the first alignment guiding layer 50 and the oblique sawtooth structure 321 are opposed to each other.
  • the first substrate 70 and the second substrate 10 are paired, and the first alignment guiding layer 50 and the oblique sawtooth structure 321 are disposed opposite to each other, and the liquid crystal is filled between the first substrate 70 and the second substrate 10 to complete Preparation of the entire spatial phase modulator.
  • the present embodiment forms a diagonal sawtooth structure 321 which is formed on the first alignment guiding layer 50 when the oxide layer is formed by using the same process in the preparation of the spatial phase modulator.
  • Convenient for the production of spatial phase modulators, while avoiding the use of friction The process of forming a second alignment guiding layer on the oxide layer damages the oxide, improving the yield of the spatial phase modulator.

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Abstract

一种空间相位调制器及其制备方法。该空间相位调制器包括对盒的第一基板(70)及第二基板(10)，以及设置在两个基板之间的液晶层(40)。第一基板(70)朝向液晶层(40)的一面层叠设置有透明电极层(60)及第一对准导向层(50)，第二基板(10)朝向液晶层(40)的一面层叠设置有电极层(20)及绝缘介质玻璃层(30)。绝缘介质玻璃层(30)朝向液晶层(40)的一面具有斜锯齿结构(321)，锯齿结构(321)作为第二对准导向层与第一对准导向层(50)配合控制液晶层(40)的液晶分子的偏转方向。

Description

一种空间相位调制器及其制备方法 技术领域
本发明涉及到通信领域，尤其涉及到一种空间相位调制器及其制备方法。
背景技术
LCoS(Liquid Crystal on Silicon)，即液晶附硅，也叫空间相位调制器，是一种基于反射模式，尺寸非常小的矩阵液晶装置。通常，单片空间相位调制器上由数百万个像素点(pixel)构成，每个像素的大小为几个或者几十个微米。通过控制每个像素点上的电压值，来实现空间相位调制器的不同功能。空间相位调制器最开始的应用主要在显示领域，与其它液晶显示技术相比，基于空间相位调制器的显示设备更容易实现高的分辨率和充分的色彩表现。随着对空间相位调制器的研究逐渐深入，其应用范围也不断扩大。特别近几年，空间相位调制器作为一种新型的光学引擎，已经逐渐应用于光通信领域：包括WSS、色散补偿、光学整形等等。
与显示领域应用不同的是，在通信中的应用主要是基于空间相位调制器的相位调制效应。LCoS作为SLM(空间相位调制器)，实现对空间光的相位控制，从而实现空间相位调制器的相应功能。传统的空间相位调制器如图1所示，其物理结构从上到下依次包括表面玻璃层1、公共ITO电极层2、上对准导向层3、液晶分子层4、下对准导向层5、电极层6以及硅基背板7。当在电极层6以及公共ITO电极层2之间施加电压后，液晶分子在电场的作用下产生偏转，不同的电压会产生不同的偏转角度。同时，由于液晶分子材料的双折射效应，分子材料的不同偏角意味着不同的双折射率以及光程。因此，当入射光进入液晶层的不同位置时，由于加载的电压不同而产生不同的光相位延迟量，从而实现对入射光的空间相位调制效应。
在空间相位调制器的有源区域有一层镀铝电极，大小对应于空间相位调 制器的每个像素点(pixel)。由于每个像素点上所加的电压值是不一样的，因此，在相邻的像素点之间，需要一个空闲(gap)区域来隔离两个像素点之间的电场干扰，而空闲区域的材料为硅，对于入射光基本不反射。这样一来，当光入射至空间相位调制器的背板时，入射在镀铝电极上的部分能够得到大部分反射(通常>96％)，而入射至gap区域的光将大部分被吸收而损耗掉。当gap减小时，可以提高器件反射率，但是由于边沿场效应使得两个相邻像素点的串扰增加，影响器件性能。因此，在空间相位调制器器件设计时，需要在损耗及串扰之间作一个平衡，保证器件的综合性能。当空间相位调制器用于光通信领域时，空间相位调制器损耗的提升必然会带来器件的额外损耗，需要增加光放大器的增益值，而这样会带来更大的放大器噪声，影响系统传输性能。因此，在通信领域应用时，空间相位调制器的器件损耗显得更加尤为重要。以目前商用的产品为例，其用于通信波段的产品的填充率(定义为电极区域与整个像素点区域的比值)为87％，器件的反射率为60％。这样，仅由反射率带来的损耗就达到2.2dB。因此，当空间相位调制器作为光学开关引擎用于光模块(如WSS)时，由空间相位调制器部件带来的损耗就将达到3dB左右，而传统的MEMS光学引擎损耗<1dB。因此，基于该空间相位调制器的光学器件，在器件损耗方面性能将受到影响。
如图2所示，现有技术一通过在空间相位调制器中间加入绝缘介质玻璃层8方式，可以有效提升器件的反射率。即空间相位调制器下基板上的结构包括：硅基背板7，设置在硅基背板上的电极层6，设置在电极层6上的绝缘介质玻璃层8，及设置在绝缘介质玻璃层8上的下对准导向层5。然而，该绝缘介质玻璃层8的引入，会给工艺制作带来一定的难度，具体原因如下：空间相位调制器器件在液晶分子(LC)层与基板之间会有一层由聚合物材料构成的对准导向 层，该层用于控制LC分子的偏转方向以及偏转速度，保证空间相位调制器器件的稳定工作。对于传统的空间相位调制器芯片，对准导向层是用机械摩擦的方式在硅基板上实现，对空间相位调制器的整体性能以及后续的工艺流程均没有影响。然而，对于加入绝缘介质玻璃层8的空间相位调制器芯片结构，由于对准导向层将处于液晶分子与绝缘介质玻璃层之间，该对准导向层在制作过程中很容易对绝缘介质玻璃层造成破坏，从而影响成品率以及器件性能。
发明内容
本发明提供了一种空间相位调制器及其制备方法，用以提高空间相位调制器的成品率及简化空降相位调制器的制作工艺。
第一方面，提供了一种空间相位调制器，该空间相位调制器包括：对盒的第一基板及第二基板，以及设置在所述第一基板及第二基板之间的液晶层；其中，沿第一基板指向第二基板的方向，所述第一基板朝向所述液晶层的一面层叠设置有透明电极层及第一对准导向层；沿所述第二基板指向所述第一基板的方向，所述第二基板朝向液晶层的一面层叠设置有电极层及绝缘介质玻璃层，所述绝缘介质玻璃层朝向所述液晶层的一面具有斜锯齿结构，在所述透明电极层及所述电极层通电形成电场时，所述斜锯齿结构作为第二对准导向层与所述第一对准导向层配合控制所述液晶层的液晶分子的偏转方向。
结合上述第一方面、在第一种可能的实现方式中，所述绝缘介质玻璃层包括至少一对折射率不同的氧化物层。
结合上述第一方面的第一种可能的实现方式，在第二种可能的实现方式中，所述氧化物层的氧化物为ZrO2、SiO2或TiO2。
结合上述第一方面的第一种可能的实现方式，在第三种可能的实现方式中，所述斜锯齿结构设置在与所述液晶层相邻的一层氧化物层。
结合上述第一方面、在第四种可能的实现方式中，所述每个斜锯齿的倾斜角介于3°～15°。
结合上述第一方面、第一方面的第一种可能的实现方式、第一方面的第二种可能的实现方式、第一方面的第三种可能的实现方式、第一方面的第四种可能的实现方式，在第五种可能的实现方式中，所述第一基板为玻璃基板，所述第二基板为硅基背板。
结合上述第一方面的第五种可能的实现方式，在第六种可能的实现方式中，所述电极层为镀铝电极层。
第二方面，提供了一种空间相位调制器的制备方法，该制备方法包括以下步骤：
在第一基板上形成透明电极层及第一对准导向层；且，
在第二基板上形成电极层及绝缘介质玻璃层，并在绝缘介质玻璃层的表面形成斜锯齿结构；所述斜锯齿结构作为第二对准导向层与所述第一对准导向层配合控制所述液晶层的液晶分子的偏转方向；
将第一基板及第二基板对盒并填充液晶层，且在对盒时，所述第一对准导向层及所述斜锯齿结构相向而置。
结合上述第二方面，在第一种可能的实现方式中，所述在第二基板上形成电极层及绝缘介质玻璃层，并在绝缘介质玻璃层的表面形成斜锯齿结构具体为：
在第一基板上形成电极层；
在形成的电极层上形成至少一对折射率不同的氧化物层，并在形成最后一层氧化物层时，将第一基板旋转设定角度，形成斜锯齿结构的最后一层氧化物层，且该斜锯齿的倾斜方向朝向所述液晶层的对准方向。
结合上述第二方面的第一种可能的实现方式，在第二种可能的实现方式中，在形成斜锯齿结构的最后一层氧化物层时，形成的斜锯齿的倾斜角介于3°～10°。
结合上述第二方面的第二种可能的实现方式，在第三种可能的实现方式中，还包括：在形成的电极层上交替形成折射率不同的氧化物层之前，根据空间相位调制器的工作波长及特性要求，优化各层氧化物层的材料、厚度、 周期数以及斜锯齿宽度。
结合上述第二方面的第二种可能的实现方式，在第四种可能的实现方式中，在具体设置所述至少一对折射率不同的氧化物层时可采用：(0.5H 0.5L)^n、(0.5H L 0.5H)^n、H(L H)^n方式来制备。
根据第一方面提供的空间相位调制器、第二方面提供的提供空间相位调制器的制备方法。空间相位调制器通过采用在绝缘介质玻璃层上形成斜锯齿结构作为第二对准导向层，从而在制作绝缘介质玻璃层时即可制作出第二对准导向层，简化了空间相位调制器的制作步骤，并且与现有技术相比，本实施例提供的空间相位调制器在制作的过程中，在形成绝缘介质玻璃层时即形成斜锯齿结构，避免了现有技术中生产空间相位调制器时，在绝缘介质玻璃层上通过机械摩擦的方式形成对准导向层时对绝缘介质玻璃层造成的破坏，从而提高了空间相位调制器的成品率，同时，降低了空调间调制器的生产难度，简化了生产工艺。
附图说明
图1为现有技术中的空间相位调制器的结构示意图；
图2为现有技术中的空间相位调制器的硅基背板的结构示意图；
图3为本发明实施例提供的空间相位调制器的结构示意图；
图4a～图4b为本发明实施例提供的绝缘介质玻璃层的制备流程图；
图5为本发明实施例提供的一种空间相位调制器的结构示意图；
图6为图5所示的空间相位调制器的反射率仿真图；
图7为图5所示的空间相位调制器的响应时间实验图。
附图标记：
1-表面玻璃层     2-公共ITO电极层    3-上对准导向层
4-液晶分子层     5-下对准导向层     6-电极层
7-硅基背板       8-绝缘玻璃层       10-第二基板
20-电极层        30-绝缘介质玻璃层  31-第一氧化物层
32-第二氧化物层  321-斜锯齿结构     40-液晶层
50-第一对准导向层 60-透明电极层      70-第一基板
80-沉积源
具体实施方式
以下结合附图对本发明的具体实施例进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
如图3所示，图3为本发明实施例提供的空间相位调制器的结构示意图。
本发明实施例提供了一种空间相位调制器，该空间相位调制器包括：对盒的第一基板70及第二基板10，以及设置在第一基板70及第二基板10之间的液晶层40；其中，沿第一基板70指向第二基板10的方向，第一基板70朝向液晶层40的一面层叠设置有透明电极层60及第一对准导向层50；沿第二基板10指向第一基板70的方向，第二基板10朝向液晶层40的一面层叠设置有电极层20及绝缘介质玻璃层30，绝缘介质玻璃层30朝向液晶层40的一面具有斜锯齿结构321，在透明电极层60及电极层20通电形成电场时，斜锯齿结构321作为第二对准导向层与第一对准导向层50配合控制液晶层40的液晶分子的偏转方向。
在上述实施例中，通过采用在绝缘介质玻璃层30上形成斜锯齿结构321作为第二对准导向层，从而在制作绝缘介质玻璃层30时即可制作出第二对准导向层，简化了空间相位调制器的制作步骤，并且与现有技术相比，本实施例提供的空间相位调制器在制作的过程中，在形成绝缘介质玻璃层30时即形成斜锯齿结构321，避免了现有技术中生产空间相位调制器时，在绝缘介质玻璃层30上通过机械摩擦的方式形成对准导向层时对绝缘介质玻璃层30造成的破坏，从而提高了空间相位调制器的成品率，同时，降低了空调间调制器的生产难度，简化了生产工艺。
此外，在具体生产上述绝缘介质玻璃层30的斜锯齿结构321时，斜锯齿的倾角可以灵活变换，不受设备影响，有效提升空间相位调制器的切换速度；具体的，如图4a及图4b所示，图4a及图4b示出了形成绝缘介质玻璃层30 的工艺步骤，其中，绝缘介质玻璃层30有多层不同折射率的氧化物层组成，具体的，绝缘介质玻璃层30包括至少一对折射率不同的氧化物层，如图3中所示的一对折射率不同的氧化物层分别为第一氧化物层31及第二氧化物层32，在形成绝缘介质玻璃层30时，第一氧化物层31及第二氧化物层32交替设置。其中的氧化物层的氧化物为ZrO2、SiO2或TiO2，或者其他的氧化物，在具体生产时，首先根据空间相位调制器的工作波长及特性(如反射率)要求，选择合适的氧化物层、厚度、周期数以及斜锯齿宽度x首先形成绝缘介质玻璃层30中的各层氧化物。之后通过蒸发方式沉积在空间相位调制器背板上，其中沉积方式可以为等离子法(plasma)、热蒸发法(thermal)、电子束法(Electron)等；在形成斜锯齿结构321时，斜锯齿结构321设置在与液晶层40相邻的一层氧化物层。具体的，将第二基板10在旋转平台上转动一个角度(或者将沉积源80相对第二基板10旋转一个角度)，使得空间相位调制器与沉积源80之间有一个夹角，该夹角与斜锯齿的倾角一致，该倾斜角介于3°～15°，如3°、5°、7°、10°、12°、14°、15°等不同的倾斜角度；通过plasma/thermal/electron source等蒸发方式完成绝缘介质玻璃层30最上层材料的沉积形成斜锯齿结构，如图3所示，其中的倾斜角为角度a，该角度介于3°～10°，如3°、5°、7°、10°等不同的倾斜角度。通过上述描述可以看出，本实施例提供的空间相位调制器的绝缘介质玻璃层30上的斜锯齿结构321可以根据需要调整倾斜角度，不受设备本身结构的影响，方便根据实际情况调整斜锯齿的倾斜角度。
在本发明的具体实施例中，第一基板70采用玻璃基板，第二基板10采用硅基背板。并且其中的电极层20为镀铝电极层，该镀铝电极层与透明电极层60形成电场，以给液晶分子转动提供电场力。
为了方便对本发明实施例的理解，下面结合附图5对本发明的一具体实施例进行说明。
本实施例提供的空间相位调制器的第一基板70、透明电极层60及第一对准导向层50与上述实施例提供的空间相位调制器相同，因此，在图5中未示 出，图5仅示出了具体的绝缘介质玻璃层30的结构，其中的绝缘介质玻璃层30中的氧化物选用ZrO2和SiO2，且绝缘介质玻璃层30的层数及厚度如图5所示，该厚度根据空间相位调制器的工作波长及特性(如反射率)要求优化出来的。
该实施例所述的空间相位调制器的应用波段为1550nm波段。首先，我们设定斜锯齿结构321的预倾角大小为5°，绝缘介质玻璃层30的氧化物材料选择为ZrO2和SiO2，其中的ZrO2作为高折射率材料，SiO2则作为低折射率材料。绝缘介质玻璃层30设计采用(0.5H L 0.5H)^n结构。最终，优化的绝缘介质玻璃层30结构如图5所示，斜锯齿宽度为3mm，因此最上层ZrO2材料的厚度变化大约在(90～350nm)之间。该层既作为绝缘介质玻璃层30的最上层，也作为第二对准导向层，起到对液晶分子的偏转导向的作用。
针对该绝缘介质玻璃层30结构，我们进行了仿真，从结果可以看出(如图6所示)，虽然绝缘介质玻璃层30最上层为倾斜层，造成不同位置对应的绝缘介质玻璃层30结构厚度不一样，但这对于器件的反射率影响很小。整体器件反射率>96％，不同厚度带来的反射率差异<2％。
根据该绝缘介质玻璃层30设计以及前面所述的工艺步骤，我们完成了整体器件的封装，图7为器件反射率的实验测试结果。由图7可以看出，当空间相位调制器加入该绝缘介质玻璃层30结构后，器件反射率从75％提升到95％以上，同时波长相关性也减弱，从1520nm至1570nm，引入该绝缘介质玻璃层30后的波长相关性<1％。
参考图3、图4a及图4b，本发明实施例还提供了一种空间相位调制器的制备方法，该制备方法包括以下步骤：
在第一基板70上形成透明电极层60及第一对准导向层50；且
在第二基板10上形成电极层20及绝缘介质玻璃层30，并在绝缘介质玻璃层30的表面形成斜锯齿结构321；所述斜锯齿结构321作为第二对准导向层与所述第一对准导向层50配合控制所述液晶层40的液晶分子的偏转方向；
将第一基板70及第二基板10对盒并填充液晶层40，且在对盒时，所述 第一对准导向层50及所述斜锯齿结构321相向而置。
在上述实施例中，通过在形成绝缘介质玻璃层30时形成斜锯齿结构321，避免了现有技术中生产空间相位调制器时，在绝缘介质玻璃层30上通过机械摩擦的方式形成对准导向层时对绝缘介质玻璃层30造成的破坏，从而提高了空间相位调制器的成品率，同时，降低了空调间调制器的生产难度，简化了生产工艺。此外，斜锯齿结构321的倾角可以灵活变换，即斜锯齿结构321的倾斜角度可以根据调整的绝缘介质玻璃层后的倾斜程度而定，不受设备影响，有效提升空间相位调制器的切换速度。
为了方便对本实施例提供的制备方法的理解，下面结合详细的生产步骤进行说明。
步骤一：在第一基板70上形成透明电极层60及第一对准导向层50；
具体的，其中的第一基板70采用玻璃基板，通过刻蚀曝光等方式在玻璃基板上形成透明电极层60，并在形成的透明电极层60沉积一层氧化物，通过机械摩擦的方式形成第一对准导向层50；
步骤二、在第二基板10上形成电极层20及绝缘介质玻璃层30，并在绝缘介质玻璃层30的表面形成斜锯齿结构321；所述斜锯齿结构321作为第二对准导向层与所述第一对准导向层50配合控制所述液晶层40的液晶分子的偏转方向；
具体的，首先在第一基板70上形成电极层20；之后，在形成的电极层20上形成至少一对折射率不同的氧化物层，并在形成最后一层氧化物层时，将第一基板70旋转设定角度，形成斜锯齿结构321的最后一层氧化物层，且该斜锯齿的倾斜方向朝向液晶层40的对准方向。
在形成的电极层20上交替形成折射率不同的氧化物层之前，根据空间相位调制器的工作波长及特性要求，优化各层氧化物层的材料、厚度、周期数以及斜锯齿宽度。在具体设置至少一对折射率不同的氧化物层时可采用：(0.5H 0.5L)^n、(0.5H L 0.5H)^n、H(L H)^n方式来制备。以本实施例中的C波段(1530-1570nm)为例，其中，H:代表在C波段处(通常取中心波 长1550nm)的四分之一的光学厚度(高折射率材料)；L:代表在1550nm处的四分之一的光学厚度(低折射率材料)；n:代表重复的次数；例如高折射率材料为A，其折射率为r1，低折射率材料为B，其折射率为r2.，n取值为3，则(0.5H 0.5L)^n材料顺序依次为：ABABAB，A材料的厚度为(0.5×1550nm)/(4×r1)，B的厚度为(0.5×1550nm)/(4×r2)；(0.5H L 0.5H)^n材料顺序依次为ABA ABA ABA，其中A材料的厚度为(0.5×1550nm)/(4×r1)，B的厚度为(1×1550nm)/(4×r2)；H(L H)^n材料顺序依次为A BA BA BA，其中A材料的厚度为(1×1550nm)/(4×r1)，B的厚度为(1×1550nm)/(4×r2)。
如图4a所示，通过蒸发方式将氧化物层沉积在空间相位调制器背板上，其中沉积方式可以为等离子法(plasma)、热蒸发法(thermal)、电子束法(Electron)等，每层的厚度依据绝缘介质玻璃层30设计时的优化值，通过控制沉积温度、时间等参数来实现；该流程多次重复实现绝缘介质玻璃层30各层的沉积(不包括绝缘介质玻璃层30带倾斜角的最上层氧化层)；在完成与氧化物层之后，如图4b所示，将硅基背板在旋转平台上转动一个角度(或者将沉积源80相对硅基背板旋转一个角度)，使得空间相位调制器与沉积源80之间有一个夹角，该夹角与斜锯齿的倾角一致，该倾斜角介于3°～10°，如3°、5°、7°、10°等不同的倾斜角度；通过plasma/thermal/electron source等蒸发方式完成绝缘介质玻璃层30最上层材料的沉积。
步骤三：将第一基板70及第二基板10对盒并填充液晶层40，且在对盒时，所述第一对准导向层50及所述斜锯齿结构321相向而置。
具体的，将第一基板70及第二基板10对盒，并且使得第一对准导向层50及斜锯齿结构321相向设置，并在第一基板70及第二基板10之间填充液晶，完成整个空间相位调制器的制备。
通过上述具体实施例的描述可以看出，本实施例在制备空间相位调制器时，通过采用同一工艺在形成氧化物层时形成于第一对准导向层50相配合的斜锯齿结构321，从而方便了空间相位调制器的制作，同时，避免了采用摩擦 的工艺在氧化物层上形成第二对准导向层对氧化物造成的损伤，提高了空间相位调制器的成品率。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (12)

  1. 一种空间相位调制器，其特征在于，包括：对盒的第一基板及第二基板，以及设置在所述第一基板及第二基板之间的液晶层；其中，沿第一基板指向第二基板的方向，所述第一基板朝向所述液晶层的一面层叠设置有透明电极层及第一对准导向层；沿所述第二基板指向所述第一基板的方向，所述第二基板朝向液晶层的一面层叠设置有电极层及绝缘介质玻璃层，所述绝缘介质玻璃层朝向所述液晶层的一面具有斜锯齿结构，在所述透明电极层及所述电极层通电形成电场时，所述锯齿结构作为第二对准导向层与所述第一对准导向层配合控制所述液晶层的液晶分子的偏转方向。
  2. 如权利要求1所述的空间相位调制器，其特征在于，所述绝缘介质玻璃层包括至少一对折射率不同的氧化物层。
  3. 如权利要求2所述的空间相位调制器，其特征在于，所述氧化物层的氧化物为ZrO2、SiO2或TiO2。
  4. 如权利要求2所述的空间相位调制器，其特征在于，所述斜锯齿结构设置在与所述液晶层相邻的一层氧化物层。
  5. 如权利要求1所述的空间相位调制器，其特征在于，所述每个斜锯齿的倾斜角介于3°～15°。
  6. 如权利要求1～5任一项所述的空间相位调制器，其特征在于，所述第一基板为玻璃基板，所述第二基板为硅基背板。
  7. 如权利要求6所述的空间相位调制器，其特征在于，所述电极层为镀铝电极层。
  8. 一种空间相位调制器的制备方法，其特征在于，包括以下步骤：
    在第一基板上形成透明电极层及第一对准导向层；且，
    在第二基板上形成电极层及绝缘介质玻璃层，并在绝缘介质玻璃层的表面形成斜锯齿结构；所述斜锯齿结构作为第二对准导向层与所述第一对准导向层配合控制液晶层的液晶分子的偏转方向；
    将第一基板及第二基板对盒并填充液晶层，且在对盒时，所述第一对准导向层及所述斜锯齿结构相向而置。
  9. 如权利要求8所述的空间相位调制器的制备方法，其特征在于，所述在第二基板上形成电极层及绝缘介质玻璃层，并在绝缘介质玻璃层的表面形成斜锯齿结构具体为：
    在第一基板上形成电极层；
    在形成的电极层上形成至少一对折射率不同的氧化物层，并在形成最后一层氧化物层时，将第一基板旋转设定角度，形成斜锯齿结构的最后一层氧化物层，且该斜锯齿的倾斜方向朝向所述液晶层的对准方向。
  10. 如权利要求9所述的空间相位调制器的制备方法，其特征在于，在形成斜锯齿结构的最后一层氧化物层时，形成的斜锯齿的倾斜角介于3°～15°。
  11. 如权利要求10所述的空间相位调制器的制备方法，其特征在于，还包括：在形成的电极层上交替形成折射率不同的氧化物层之前，根据空间相位调制器的工作波长及特性要求，优化各层氧化物层的材料、厚度、周期数以及斜锯齿宽度。
  12. 如权利要求10所述的空间相位调制器的制备方法，其特征在于，在具体设置所述至少一对折射率不同的氧化物层时可采用：(0.5H 0.5L)^n、(0.5H L 0.5H)^n、H(L H)^n方式来制备。
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