WO2016165511A1 - 薄膜晶体管及制作方法、阵列基板、显示装置 - Google Patents

薄膜晶体管及制作方法、阵列基板、显示装置 Download PDF

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WO2016165511A1
WO2016165511A1 PCT/CN2016/076232 CN2016076232W WO2016165511A1 WO 2016165511 A1 WO2016165511 A1 WO 2016165511A1 CN 2016076232 W CN2016076232 W CN 2016076232W WO 2016165511 A1 WO2016165511 A1 WO 2016165511A1
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source
drain
thin film
film transistor
metal layer
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PCT/CN2016/076232
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French (fr)
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辛龙宝
方金钢
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京东方科技集团股份有限公司
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Priority to US15/321,056 priority Critical patent/US9978875B2/en
Publication of WO2016165511A1 publication Critical patent/WO2016165511A1/zh

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    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to a thin film transistor and a manufacturing method thereof, an array substrate, and a display device.
  • Oxide Thin Film Transistor Oxide Thin Film Transistor, Oxide TFT
  • the different electrical characteristics exhibited by different structures are also required to be adjusted in the process design.
  • heterogeneous interfaces may contain a variety of complex reaction mechanisms (eg, electron transfer rate, Ohom Contact, etc.), process technology, plasma processing, pollution treatment, and It is particularly important that the oxide semiconductor is shielded from light by illumination.
  • Zinc oxynitride (ZnON) TFTs are in a dominant position in R&D due to their high mobility and low price.
  • the ZnON TFT generally adopts a bottom gate structure with respect to other oxide materials such as Indium Gallium Zinc Oxide (IGZO).
  • IGZO Indium Gallium Zinc Oxide
  • the SS (subthreshold Swing) of the TFT device is sub-threshold. Swing) performance is not good.
  • a primary object of the present disclosure is to provide a thin film transistor structure capable of forming a good ohmic contact to avoid degradation of SS performance.
  • the present disclosure provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display device.
  • a thin film transistor including: a source, a drain, and a metal oxynitride semiconductor layer formed on the source and the drain; and a metal layer between the source and the drain and the metal oxynitride semiconductor layer; wherein the metal layer is capable of undergoing an oxidation reaction with oxygen ions in the metal oxynitride semiconductor layer.
  • the metal layer completely covers the source and the drain.
  • the metal layer is formed with an opening region at a position corresponding to a gap between the source and the drain, the length of the opening region being less than or equal to a gap between the source and the drain length.
  • the metal layer further covers a portion of a region of the channel of the thin film transistor between the source and the drain.
  • the metal material used in the metal layer comprises: Ti.
  • the material used for the metal oxynitride semiconductor layer comprises: ZnON.
  • the metal material used by the source and the drain comprises: Cu.
  • an array substrate including the above-described thin film transistor is provided.
  • a display device including the aforementioned array substrate.
  • a method of fabricating a thin film transistor includes: forming a source and a drain of a thin film transistor; forming a metal oxynitride semiconductor on the source and the drain a metal layer in which oxygen ions in the layer undergo an oxidation reaction; and the metal oxynitride semiconductor layer is formed on the metal layer or on the source, the drain, and the metal layer.
  • the metal layer is completely covered by the source and the drain, and is formed at a gap position corresponding to the source and the drain.
  • An open area wherein the length of the open area is less than or equal to a length of a gap between the source and the drain.
  • the array substrate, and the display device by using a Ti metal layer in combination with a ZnON semiconductor layer, Ti can be grasped from ZnON to generate ZnN having higher conductivity. Moreover, the Ti metal layer can form a good barrier to Cu SD, avoiding diffusion of Cu to the semiconductor layer, thereby forming a good ohmic contact and avoiding a decrease in the SS performance of the TFT.
  • 1 is a schematic structural view of a Coplanar type IGZO TFT
  • FIG. 2 is a schematic structural view of a thin film transistor according to an embodiment of the present disclosure
  • FIG. 3 is a flow chart of a method of fabricating a thin film transistor in accordance with an alternative embodiment of the present disclosure
  • FIG. 4 is a schematic diagram of a production process of a thin film transistor according to an embodiment of the present disclosure.
  • FIG. 1 is a schematic structural diagram of a Coplanar type IGZO TFT.
  • IGZO is directly formed on the source and drain (SD). It has the advantage of using less mask and simple manufacturing process, but it also has defects such as damage to the front channel and Oxide/SD contact.
  • the ZnO N TFT Compared with an Oxide TFT using a semiconductor material such as IGZO, the ZnO N TFT has advantages such as high electron mobility and low cost, and its structure generally adopts the structure of the above Oxide TFT (for example, FIG. 1).
  • the addition of the N element is a difficulty in the development of ZnON-based semiconductor materials, and the added N element is also easy to pass. This results in poor SS performance of the TFT device, so that a good ohmic contact cannot be formed.
  • the illumination also increases the off-current of the ZnON TFT device to generate leakage current.
  • the present disclosure provides a technical solution that can solve the above technical problems.
  • the TFT structure shown in FIG. 1 described above is improved.
  • a ZnON semiconductor material is used, and the passage of the N element can be avoided, while the problem of diffusion of Cu in the source and drain (SD) into the semiconductor material can be avoided.
  • Embodiments of the present disclosure provide a thin film transistor.
  • 2 is a schematic structural view of a thin film transistor according to an embodiment of the present disclosure.
  • the thin film transistor may include: a source, a drain, and a metal oxynitride semiconductor layer formed on the source and the drain; and being located at the source/drain and a metal layer between the metal oxynitride semiconductor layers; wherein the metal layer is capable of undergoing an oxidation reaction with oxygen ions in the metal oxynitride semiconductor layer.
  • the TFT structure shown in FIG. 2 is different from the TFT structure shown in FIG.
  • a semiconductor layer is not directly formed on the source and the drain, but a metal layer is first formed on the source and the drain. Since the metal layer has good metal activity, it can be combined with the metal oxynitride semiconductor layer formed thereon and further chemically react. Specifically, the metal atoms in the metal layer are oxidized with oxygen ions in the metal oxynitride semiconductor material, that is, the metal layer absorbs oxygen, thereby making the metal oxynitride into a metal nitride having a better conductivity.
  • the semiconductor enables the entire semiconductor layer to have a higher electron mobility, and finally forms a better ohom contact between the semiconductor layer and the SD.
  • the metal layer may completely cover the source and the drain. This can make the contact surface between the metal layer and the source and the drain wider, and finally effectively improve the ohmic contact between the semiconductor layer and the SD.
  • the metal layer is formed with an opening region at a position corresponding to a gap between the source and the drain, the length of the opening region being less than or equal to between the source and the drain The length of the gap. That is, the metal layer does not completely cover the source and the drain
  • the gap i.e., the channel region
  • the gap is such that a conductive path is not formed directly between the source and the drain.
  • the length of the open area can be designed according to actual needs, for example, the length of the open area is smaller than the length of the channel area. That is, as shown in FIG. 2, the metal layer covers a part of the channel region while completely covering the SD.
  • the metal material used in the metal layer comprises: Ti.
  • the metal material can also adopt a metal having similar characteristics to Ti, which has the characteristics of being able to form a good barrier to the metal material used for the source and the drain. Therefore, in the actual production process and design, the metal material used in the metal layer can be determined by referring to the metal material used in the SD.
  • the material used for the metal oxynitride semiconductor layer may include: ZnON. That is, the metal oxynitride semiconductor layer used in the TFT structure in the present embodiment can preferably use ZnON. Of course, other semiconductors similar in nature to ZnON can also be used.
  • the metal material used by the source and the drain may include: Cu. Compared with Al, Cu can improve the ohom contact of the coplanar type Oxide TFT. Therefore, in the present embodiment, it is preferable to use Cu as a material of SD.
  • an embodiment of the present disclosure further provides an array substrate including the above thin film transistor. Since the improvement of the array substrate lies in the above-mentioned thin film transistor, the above description has been made in detail for the thin film transistor, and the array substrate will not be described here with reference to the drawings.
  • an embodiment of the present disclosure further provides a display device using the above array substrate.
  • the structure of the display device will not be described more specifically herein with reference to the accompanying drawings.
  • the display device may be any product or component having a display function such as a display panel, a television, a display, a digital photo frame, a mobile phone, a tablet computer, or the like.
  • the embodiment of the present disclosure further provides a method for fabricating a thin film transistor.
  • 3 is a flow chart of fabrication of a thin film transistor in accordance with an embodiment of the present disclosure. As shown in FIG. 3, the flow includes the following steps (step S302 - step S306):
  • Step S302 forming a source and a drain of the thin film transistor
  • Step S304 forming a metal layer capable of undergoing an oxidation reaction with oxygen ions in the metal oxynitride semiconductor layer on the source and the drain;
  • Step S306 on the metal layer, or on the source, the drain and the metal layer
  • the metal oxynitride semiconductor layer is formed.
  • the metal oxynitride semiconductor layer is formed on the metal layer; when the metal layer is not completely covered In the case of the source and the drain, the metal oxynitride semiconductor layer is formed on the source, the drain, and the metal layer. That is, in step S306, forming the metal oxynitride semiconductor layer on the source, the drain, and the metal layer means a portion where the source and the drain are not covered by the metal layer. The metal oxynitride semiconductor layer is formed on the metal layer and on the metal layer.
  • the metal layer in the process of forming the metal layer, may be completely covered between the source and the drain, and between the source and the drain.
  • the gap position forms an open area, wherein the length of the open area is less than or equal to the length of the gap between the source and the drain.
  • FIG. 4 is a schematic diagram of a production process of a thin film transistor according to an embodiment of the present disclosure.
  • the production process of the thin film transistor mainly includes the following steps (the figure is not directly labeled in FIG. 4, please refer to The reference numerals in Figure 2 can be:
  • a first masking process (Photo Etching Process 1, PEP1) is performed to form a pattern of a gate metal layer.
  • a certain thickness may be deposited on the substrate by sputtering or thermal evaporation (for example, the thickness may be The gate metal layer.
  • the gate metal layer may be a metal such as Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W, and an alloy of these metals, and the gate metal layer may be a single layer structure or multiple layers. Structure, multilayer structure such as Cu ⁇ Mo, Ti ⁇ Cu ⁇ Ti, Mo ⁇ Al ⁇ Mo, etc.
  • a single layer structure of Cu may be optionally employed, and then a pattern of a gate metal layer including a gate line and a gate electrode is formed by a first mask process.
  • a gate insulating layer is formed. Specifically, a chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD) method may be employed to deposit a thickness on the gate metal layer.
  • the gate insulating layer material may be an oxide, a nitride or an oxynitride, and the gate insulating layer may be a single layer, a double layer or a multilayer structure, and the gate insulating layer may be SiNx, SiOx or Si(ON)x.
  • the gate insulating layer may have a thickness of SiNx and thickness are The SiO 2 consists of a two-layer structure. Of course, the embodiments of the present disclosure do not limit this.
  • Source-drain metal layer (2) Perform a second mask process (PEP2) to form a pattern of source-drain (SD) metal layers including source, drain, and data lines.
  • PEP2 a second mask process
  • SD source-drain
  • the formation process of the source-drain metal layer is similar to the formation process of the gate metal layer. It should be noted that, in the embodiment of the present disclosure, the material used for the source-drain metal layer may still be Cu.
  • a third mask process is performed to form a Ti metal layer and a ZnON semiconductor layer. It should be noted that this step is the most important one-step process for forming the thin film transistor provided by the embodiment of the present disclosure.
  • the concentration of ZnON in the ZnON semiconductor layer can be controlled in the process. Of course, this can be considered according to the specific requirements of the product. After the formation of such a structure, a TFT channel having a good conductivity is formed.
  • the Ti metal layer has an action of providing an oxygen atom acceptor (O-acceptor) for absorbing an oxygen element (present in an oxygen ion state) in the ZnON.
  • O-acceptor oxygen atom acceptor
  • the combined layer of the Ti metal layer and the ZnON semiconductor layer is thin and has good matching with the source and drain electrodes of the TFT, a better ohmic contact is formed between the SD and the semiconductor layer. Therefore, the TFT SS (SS threshold voltage) characteristics can be improved.
  • Cu is used for both the gate metal layer and the source/drain metal layer because Cu has a relatively good taper angle compared to other metals such as Al, and it is easy to complete a good coplanar structure.
  • Ti has excellent barrier properties to Cu and can prevent Cu from diffusing into the TFT channel. Moreover, in the dry etching process of Ti metal, the phenomenon of destroying the channel is not generated, and it is relatively easy to realize in process development.
  • an insulating layer for example, an organic insulating layer having a better light blocking effect.
  • a subsequent mask process for example, PEP4, PEP5, PEP6
  • an insulating layer for example, an organic insulating layer having a better light blocking effect.
  • This can effectively improve the damage of the front channel and avoid the influence of moisture generated from the external environment.
  • the color absorption effect of the organic insulating layer can avoid the adverse effects caused by the plasma and the photoresist, thereby improving The extent to which the ZnO threshold voltage (Vth) is affected by light.
  • the subsequent process here can be referred to the related art, and will not be described in more detail here.
  • the upper and lower light sources do not affect the TFT channel. Therefore, it can be applied to an LCD display or simultaneously applied to an AMOLED top emitting device and a bottom emitting device. On the display. Moreover, since the TFT in the embodiment of the present application can effectively reduce the size of the channel, the OLED opening area can be improved, and the lifetime of the OLED can be effectively improved. Moreover, in the panel design, the influence of smaller non-essential capacitors (for example, the capacitor capacitor Cgd) can be neglected, and high-quality display quality can be provided.
  • the capacitor capacitor Cgd the capacitor capacitor Cgd
  • the gate, the source and the drain are formed using copper, and the ohmic contact of the coplanar structure of the ZnON semiconductor can be improved compared to the use of the Al profile.
  • the structure of the Ti metal layer and the Oxide TFT is used to form a highly dense insulating layer, which finally forms a better ohmic contact.
  • such a product process can be applied in the preparation process of a large-sized TFT, which can ensure high-resolution production requirements, reduce the probability of Cu diffusion to the TFT channel, and can improve the influence of backlight illumination on the stability of the TFT.

Abstract

提供了一种薄膜晶体管及制作方法、阵列基板、显示装置。其中，该薄膜晶体管的制作方法包括：形成薄膜晶体管的源极（3）和漏极（4）；在所述源极（3）和所述漏极（4）上，形成能够与金属氮氧化物半导体层（6）中的氧离子发生氧化反应的金属层（5）；在所述金属层（5）上，或在所述源极（3）、所述漏极（4）和所述金属层（5）上形成所述金属氮氧化物半导体层（6）。通过本发明，可以形成良好的欧姆接触，避免降低TFT的SS性能。

Description

薄膜晶体管及制作方法、阵列基板、显示装置
相关申请的交叉引用
本申请主张在2015年4月16日在中国提交的中国专利申请号No.201510181258.0的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示技术领域，尤其是涉及一种薄膜晶体管及制作方法、阵列基板、显示装置。
背景技术
氧化物薄膜晶体管(Oxide Thin Film Transistor，Oxide TFT)的不同结构具有不同特性。不同结构所呈现出的不同电气特性也是在工艺设计中需要进行调整的。而不同结构之间因为异质介面可能包含多种复杂的反应机制(例如，电子迁移速率、欧姆接触(Ohom Contact)等)，因此在工艺技术中，制程环境、电浆处理、污染处理，以及氧化物半导体在光照下遮光就显得特别重要。
氮氧化锌(ZnON)TFT由于具有较高的迁移率和低廉的价格处于研发的优势地位。相对于铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)等其他氧化物材料，ZnON TFT一般采用底栅结构。
虽然ZnON TFT的研发处于优势地位，但是由于N元素的添加是ZnO系半导体材料研发的难点，而且由于N元素的流逝而无法形成良好的欧姆接触，所以，TFT器件的SS(Subthreshold Swing，亚阈值摆幅)性能不佳。
然而针对上述问题，现有技术并没有提供一种有效的解决方案。
发明内容
本公开的主要目的在于提供一种能够形成良好欧姆接触，从而避免SS性能下降的薄膜晶体管结构。
为了达到上述目的，本公开提供了一种薄膜晶体管及制作方法、阵列基板、显示装置。
根据本公开的一个方面，提供了一种薄膜晶体管，包括：源极、漏极、和在所述源极和所述漏极上形成的金属氮氧化物半导体层；以及，位于所述 源极和所述漏极，与所述金属氮氧化物半导体层之间的金属层；其中，所述金属层能够与所述金属氮氧化物半导体层中的氧离子发生氧化反应。
可选地，所述金属层完全覆盖于所述源极和所述漏极。
可选地，所述金属层在对应所述源极和所述漏极之间间隙的位置形成有开口区域，所述开口区域的长度小于等于所述源极和所述漏极之间的间隙的长度。
可选地，所述金属层还覆盖位于所述源极和所述漏极之间的、薄膜晶体管的沟道的一部分区域。
可选地，所述金属层采用的金属材料包括：Ti。
可选地，所述金属氮氧化物半导体层采用的材料包括：ZnON。
可选地，所述源极及所述漏极采用的金属材料包括：Cu。
根据本公开的另一方面，提供了一种阵列基板，该阵列基板包括上述的薄膜晶体管。
根据本公开的又一方面，提供了一种显示装置，该显示装置包括前述阵列基板。
根据本公开的还一方面，提供了一种薄膜晶体管的制作方法，包括：形成薄膜晶体管的源极和漏极；在所述源极和所述漏极上，形成能够与金属氮氧化物半导体层中的氧离子发生氧化反应的金属层；在所述金属层上，或在所述源极、所述漏极和所述金属层上形成所述金属氮氧化物半导体层。
可选地，在形成所述金属层的过程中，使所述金属层完全覆盖于所述源极和所述漏极，并在对应所述源极和所述漏极之间的间隙位置形成一开口区域，其中，所述开口区域的长度小于等于所述源极和所述漏极之间的间隙的长度。
本公开所述的薄膜晶体管及制作方法、阵列基板、显示装置，通过使用Ti金属层配合ZnON半导体层，可以使得Ti从ZnON中抓取O从而产生导电率更高的ZnN。而且Ti金属层能够对Cu SD形成很好的阻挡，避免Cu扩散到半导体层，进而形成良好的欧姆接触，避免了TFT的SS性能的降低。
附图说明
图1是一种Coplanar型IGZO TFT的结构示意图；
图2是根据本公开实施例的薄膜晶体管的结构示意图；
图3是根据本公开可选实施例的薄膜晶体管的制作方法流程图；以及
图4是根据本公开实施例的薄膜晶体管的生产过程示意图。
附图标记
1栅极，2栅绝缘层，3源极，4漏极，5金属层，6金属氮氧化物半导体层，7绝缘层。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开的一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域的普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开专利申请说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”或者“一”等类似词语也不表示数量限制，而是表示存在至少一个。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也相应地改变。
相关技术中，采用氧化物(Oxide，例如，IGZO)作为薄膜晶体管(TFT)的半导体材料是较为广泛的应用。例如，比较常见的IGZO TFT包括Coplanar型的IGZO TFT、Back Channel Etched(BCE)型的IGZO TFT以及Etch Stopped(ES)型的IGZO TFT。这几种类型的IGZO TFT各自具有各自的优势和缺陷，下面以Coplanar型的IGZO TFT为例进行说明。为便于理解，请参考图1，图1是一种Coplanar类型IGZO TFT的结构示意图，从图1中可以看出，该IGZO TFT结构中，IGZO直接形成于源极和漏极(SD)之上，其具有使用较少的掩膜、制作过程简单的优势，但是同时也具有容易造成前沟道受损，Oxide/SD contact等缺陷。
相较于使用IGZO等半导体材料的Oxide TFT，ZnON TFT具有电子迁移速率高、价格低廉等优势，其结构一般也采用上述Oxide TFT的结构(例如，图1)。但是，N元素的添加是ZnON系半导体材料的研发难点，而且添加的N元素也很容易流逝。这导致TFT器件的SS性能不佳，从而无法形成较好的欧姆接触。另外光照也会提高ZnON TFT器件的off-current(截止电流)从而产生漏电流。
基于此，本公开提供了一种可以解决上述技术问题的技术方案。在本公开的实施例中，对上述图1所示的TFT结构进行了改进。在本公开的实施例的结构中，使用了ZnON半导体材料，且能够避免N元素流逝，同时可以避免源极和漏极(SD)中的Cu向半导体材料中扩散的问题。
本公开实施例提供了一种薄膜晶体管。图2是根据本公开实施例的薄膜晶体管的结构示意图。如图2所示，该薄膜晶体管可以包括：源极、漏极、和在所述源极和所述漏极上形成的金属氮氧化物半导体层；以及，位于所述源极/漏极与所述金属氮氧化物半导体层之间的金属层；其中，所述金属层能够与所述金属氮氧化物半导体层中的氧离子发生氧化反应。
同时参考图1和图2可以看出，图2所示的TFT结构与图1所示的TFT结构是不同的。图2所示的TFT结构中，在源极和漏极上并不是直接形成半导体层，而是先在源极和漏极上形成一个金属层。该金属层由于具有较好的金属活性，可以与位于其上形成的金属氮氧化物半导体层结合，并进而发生化学反应。具体地，金属层中的金属原子与金属氮氧化物半导体材料中的氧离子发生氧化反应，即金属层会吸收氧元素，从而使金属氮氧化物变成金属氮化物这一导电率更好的半导体，使得整个半导体层都具备较高的电子迁移率，而最终在半导体层与SD之间形成一个较好的欧姆接触(ohom contact)。
在本实施例中，所述金属层可以完全覆盖于所述源极和所述漏极。这样可以使金属层与源极和漏极之间的接触面更广，最终有效提高半导体层与SD之间的欧姆接触。
在本实施例中，所述金属层在对应所述源极和所述漏极之间间隙的位置形成有开口区域，所述开口区域的长度小于等于所述源极和所述漏极之间的间隙的长度。也就是说，金属层并不完全覆盖在所述源极和所述漏极之间的 间隙(即沟道区域)，这是避免直接在所述源极和所述漏极之间形成导电通路。
当然，所述开口区域的长度是可以根据实际需要进行设计的，例如，开口区域的长度小于沟道区域的长度。即如图2所示，金属层在完全覆盖住SD的同时，还覆盖住沟道区域的一部分区域。
可选地，在本实施例中，所述金属层采用的金属材料包括：Ti。当然，金属材料还可以采取与Ti具有相似特性的金属，这类金属具有能够对源极和漏极采用的金属材料形成良好阻挡性的特点。因此，在实际生产工艺和设计中，所述金属层采用的金属材料可以参考SD采用的金属材料而定。
在本实施例中，所述金属氮氧化物半导体层采用的材料可以包括：ZnON。也就是说，本实施例中的TFT结构中使用的金属氮氧化物半导体层可以优先选择使用ZnON。当然，还可以使用与ZnON性质类似的其它半导体。
在本实施例中，所述源极及所述漏极采用的金属材料可以包括：Cu。与Al相比，Cu可以改善coplanar型Oxide TFT的欧姆接触(ohom contact)。因此，本实施例中，可以优先选择使用Cu作为SD的材料。
基于上述实施例提供的薄膜晶体管，本公开实施例还提供了一种阵列基板，该阵列基板包括上述薄膜晶体管。由于该阵列基板的改进在于上述薄膜晶体管，基于前述针对薄膜晶体管已经进行了详细描述，这里不再结合附图对阵列基板进行说明。
进一步地，本公开实施例还提供了一种显示装置，该显示装置采用上述阵列基板。同样地，这里不再结合附图对该显示装置的结构进行更加具体的说明。在实际应用中，所述显示装置可以为：显示面板、电视、显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件。
对应于上述薄膜晶体管，本公开实施例还提供了一种薄膜晶体管的制作方法。图3是根据本公开实施例的薄膜晶体管的制作流程图。如图3所示，该流程包括以下步骤(步骤S302-步骤S306)：
步骤S302、形成薄膜晶体管的源极和漏极；
步骤S304、在所述源极和所述漏极上，形成能够与金属氮氧化物半导体层中的氧离子发生氧化反应的金属层；
步骤S306、在所述金属层上，或在所述源极、所述漏极和所述金属层上 形成所述金属氮氧化物半导体层。
这里需要指出的是，当所述金属层完全覆盖于所述源极和所述漏极时，所述金属氮氧化物半导体层形成在所述金属层上；当所述金属层未完全覆盖所述源极和所述漏极时，所述金属氮氧化物半导体层形成在所述源极、所述漏极和所述金属层上。也就是说，步骤S306中，在所述源极、所述漏极和所述金属层上形成所述金属氮氧化物半导体层是指在源极、漏极没有被所述金属层覆盖的部分上以及所述金属层上形成所述金属氮氧化物半导体层。
在上述制作方法中，在形成所述金属层的过程中，可以使所述金属层完全覆盖于所述源极和所述漏极，并在对应所述源极和所述漏极之间的间隙位置形成一开口区域，其中，所述开口区域的长度小于等于所述源极和所述漏极之间的间隙的长度。
下面结合图4对本实施例提供的上述薄膜晶体管的生产过程进行说明。
图4是根据本公开实施例的薄膜晶体管的生产过程示意图，请参考图4，可以看出，该薄膜晶体管的生产过程主要包括以下几个步骤(图4中不对附图进行直接标示，请参考图2中的附图标记即可)：
(1)先进行第一次掩膜工艺(Photo Etching Process 1，PEP1)，形成栅极(Gate)金属层的图形。具体地，可以采用溅射或热蒸发的方法在衬底基板上沉积一层一定厚度(例如，厚度可以为
Figure PCTCN2016076232-appb-000001
)的栅金属层。在实际应用中，栅金属层可以是Cu，Al，Ag，Mo，Cr，Nd，Ni，Mn，Ti，Ta，W等金属以及这些金属的合金，栅金属层可以为单层结构或者多层结构，多层结构比如Cu\Mo，Ti\Cu\Ti，Mo\Al\Mo等。当然，正如前述内容所描述，在本公开实施例中，可选采用Cu这一单层结构，之后通过第一次掩膜工艺形成包括栅线和栅电极的栅金属层的图形。
然后，形成栅绝缘层。具体地，可以采用化学气相沉积(CVD)或等离子体增强化学气相沉积(PECVD)方法，在栅金属层上沉积厚度约为
Figure PCTCN2016076232-appb-000002
的栅绝缘层。其中，栅绝缘层材料可以选用氧化物、氮化物或者氮氧化物，栅绝缘层可以为单层、双层或多层结构，栅绝缘层可以采用SiNx，SiOx或Si(ON)x。例如，栅绝缘层可以为厚度为
Figure PCTCN2016076232-appb-000003
的SiNx和厚度为
Figure PCTCN2016076232-appb-000004
的SiO2组成的双层结构。当然，本公开实施例并不对此作出限定。
(2)进行第二次掩膜工艺(PEP2)，形成包括源极、漏极和数据线的源漏(SD)金属层的图形。源漏金属层的形成过程与栅金属层的形成过程类似，需要说明的是，在本公开实施例中，源漏金属层所采用的材料仍然可选为Cu。
(3)进行第三次掩膜工艺(PEP3)，从而形成Ti金属层和ZnON半导体层。需要说明的是，此步骤是形成本公开实施例提供的薄膜晶体管最为重要的一步工艺。对于ZnON半导体层的形成过程来说，为了与Ti金属层形成较好的接触界面以产生化学反应进而形成导电率较高的ZnN，可以在工艺中控制ZnON半导体层中ZnON的浓度。当然，这可以根据产品的具体要求进行考虑。这种结构形成之后也就形成了导电率较好的沟道(TFT channel)。Ti金属层具有提供氧原子受体(O-acceptor)的作用，用于吸收ZnON中的氧元素(以氧离子状态存在)。同时，由于Ti金属层和ZnON半导体层构成的这一组合层较薄，且与TFT的源漏电极有较好的匹配性，从而在SD和半导体层之间形成较佳的欧姆接触。因此，可以改善TFT SS(SS临界电压)特性。
其中，栅金属层和源漏金属层均采用Cu，这是因为Cu相比于Al等其他金属具有较为优良的结构角度(taper angle)，便于完成良好的共面结构。
Ti对于Cu有极佳的阻隔性，可以避免Cu扩散至TFT沟道。而且在Ti金属的干刻蚀过程中，并不会产生破坏沟道的现象，在工艺开发上比较容易实现。
另外，在工艺过程中，可以利用Oxide TFT开发过程中的高温回火来形成作为氧供体的ZnON，以此来形成较佳的欧姆接触区域。当然，AlOx和TiOx等材料也是极佳的致密绝缘层，这些对于TFT的稳定度均有极佳的改善。
(4)进行后续掩膜工艺(例如，PEP4，PEP5，PEP6)，形成绝缘层(例如，具有较佳挡光效果的有机绝缘层)。这样可以有效改善前沟道受损的情况，并避免来自外来环境的水气产生的影响；同时，利用有机绝缘层的颜色吸收效果，可以避免电浆及光阻所产生的不良影响，进而改善ZnO阈值电压(Vth)受光影响的程度。这里的后续工艺可以参见相关技术，此处不再进行更加详细的说明。
采用此结构，无论上下光源均不会影响TFT沟道。因此，可以将其应用到LCD显示屏上，也可同时将其运用于AMOLED顶发射器件和底发射器件 的显示屏上。并且，因为本申请实施例中的TFT可以有效地缩小沟道的尺寸，所以可以提高OLED开口区域，也可有效提高OLED的寿命。而且，在面板设计上，可以忽略更小的非必要电容(例如，杂极电容Cgd)所产生的影响，更能提供高质量显示品质。
本公开提供的上述实施例中，采用铜形成栅极、源极和漏极，相比于使用Al型材，可以改善ZnON半导体的共面结构的欧姆接触。同时，利用Ti金属层搭配Oxide TFT的结构形成了高致密的绝缘层，最终形成了更好的欧姆接触。而且，这样的产品工艺可以应用在大尺寸TFT的制备工艺中，可以保证高分辨率的生产要求，减少Cu扩散至TFT沟道的概率，可以改善背光照射对TFT稳定度的影响。
以上所述是本公开的可选实施方式，应当指出，对于本领域的普通技术人员来说，在不脱离本公开所述原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为包含在本公开的保护范围之内。

Claims (11)

  1. 一种薄膜晶体管，包括：
    源极，
    漏极，
    在所述源极和所述漏极上形成的金属氮氧化物半导体层；以及，
    位于所述源极和所述漏极，与所述金属氮氧化物半导体层之间的金属层；
    其中，所述金属层能够与所述金属氮氧化物半导体层中的氧离子发生氧化反应。
  2. 根据权利要求1所述的薄膜晶体管，其中，所述金属层完全覆盖所述源极和所述漏极。
  3. 根据权利要求2所述的薄膜晶体管，其中，所述金属层在对应所述源极和所述漏极之间间隙的位置形成有开口区域，所述开口区域的长度小于等于所述源极和所述漏极之间的间隙的长度。
  4. 根据权利要求2所述的薄膜晶体管，其中，所述金属层还覆盖位于所述源极和所述漏极之间的、薄膜晶体管的沟道的一部分区域。
  5. 根据权利要求1至4中任一项所述的薄膜晶体管，其中，所述金属层采用的金属材料包括：Ti。
  6. 根据权利要求1至4中任一项所述的薄膜晶体管，其中，所述金属氮氧化物半导体层采用的材料包括：ZnON。
  7. 根据权利要求1至4中任一项所述的薄膜晶体管，其中，所述源极及所述漏极采用的金属材料包括：Cu。
  8. 一种阵列基板，包括权利要求1至7中任一项所述的薄膜晶体管。
  9. 一种显示装置，包括权利要求8所述的阵列基板。
  10. 一种薄膜晶体管的制作方法，包括：
    形成薄膜晶体管的源极和漏极；
    在所述源极和所述漏极上，形成能够与金属氮氧化物半导体层中的氧离子发生氧化反应的金属层；
    在所述金属层上，或在所述源极、所述漏极和所述金属层上形成所述金 属氮氧化物半导体层。
  11. 根据权利要求10所述的制作方法，其中，在形成所述金属层的过程中，使所述金属层完全覆盖于所述源极和所述漏极，并在对应所述源极和所述漏极之间的间隙位置形成一开口区域，其中，所述开口区域的长度小于等于所述源极和所述漏极之间的间隙的长度。
PCT/CN2016/076232 2015-04-16 2016-03-14 薄膜晶体管及制作方法、阵列基板、显示装置 WO2016165511A1 (zh)

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