WO2016155041A1 - 阵列基板、平面显示面板及阵列基板的制造方法 - Google Patents

阵列基板、平面显示面板及阵列基板的制造方法 Download PDF

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Publication number
WO2016155041A1
WO2016155041A1 PCT/CN2015/076727 CN2015076727W WO2016155041A1 WO 2016155041 A1 WO2016155041 A1 WO 2016155041A1 CN 2015076727 W CN2015076727 W CN 2015076727W WO 2016155041 A1 WO2016155041 A1 WO 2016155041A1
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Prior art keywords
region
array substrate
electric field
thickness
regions
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English (en)
French (fr)
Inventor
杜鹏
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/647,803 priority Critical patent/US9519192B2/en
Publication of WO2016155041A1 publication Critical patent/WO2016155041A1/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular, to an array substrate, a flat display panel, and a method of manufacturing an array substrate.
  • the existing fringe field switching mode (fringe-field The array substrate of the switching, FFS) includes: a substrate 1; a common electrode 2 disposed on the substrate 1; an insulating layer 3 disposed on the common electrode 2; and a plurality of pixel electrodes 4 spaced apart from the insulating layer 3.
  • the existing array substrate is designed such that a large difference is formed between the electric field intensity between the pixel electrodes and the electric field strength above the pixel electrodes.
  • the intensity of the electric field between the pixel electrode and the pixel electrode is different, so that the two parts of the pixel electrode and the pixel electrode appear bright and dark alternately, resulting in the flat display panel being presented.
  • the water ripple phenomenon directly affects the image quality of the flat display panel.
  • the technical problem to be solved by the present invention is to provide a method for manufacturing an array substrate, a flat display panel and an array substrate, which can adjust the electric field intensity between the pixel electrodes and the electric field strength above the pixel electrodes, thereby improving the image quality of the flat display panel. Provide the basis.
  • an array substrate including:
  • a common electrode disposed on the substrate
  • the thickness of the first region and the second region are different, and the thickness of the first region is greater than the thickness of the second region, and the common electrode and the pixel electrode are made of a transparent conductive material.
  • the difference in thickness between the first region and the second region is set such that a difference between an electric field strength between the pixel electrodes and an electric field strength above the pixel electrode is maintained within a predetermined range.
  • the difference in thickness between the first region and the second region is set such that a difference between an electric field strength between the pixel electrodes and an electric field strength above the pixel electrode is zero.
  • an array substrate which includes:
  • a common electrode disposed on the substrate
  • first region and the second region have different thicknesses.
  • the thickness of the first region is greater than the thickness of the second region.
  • the difference in thickness between the first region and the second region is set such that a difference between an electric field strength between the pixel electrodes and an electric field strength above the pixel electrode is maintained within a predetermined range.
  • the difference in thickness between the first region and the second region is set such that a difference between an electric field strength between the pixel electrodes and an electric field strength above the pixel electrode is zero.
  • the common electrode and the pixel electrode are made of a transparent conductive material.
  • a flat display panel including:
  • An array substrate opposite to the color filter substrate is an array substrate opposite to the color filter substrate
  • liquid crystal layer disposed between the color filter substrate and the array substrate;
  • the array substrate comprises:
  • a common electrode disposed on the substrate
  • first region and the second region have different thicknesses.
  • the thickness of the first region is greater than the thickness of the second region.
  • the difference in thickness between the first region and the second region is set such that a difference between an electric field strength between the pixel electrodes and an electric field strength above the pixel electrode is maintained within a predetermined range.
  • another technical solution adopted by the present invention is to provide a method for manufacturing an array substrate, including:
  • the pixel electrode layer is etched by using a patterned photoresist layer and using a first etching method to form a plurality of spaced pixel electrodes;
  • the insulating layer is etched by using a patterned photoresist layer and using a second etching method to form the insulating layer to form an alternating plurality of first regions and a plurality of second regions, wherein the first region and The thickness of the second region is different.
  • the first etching mode is wet etching
  • the second etching mode is dry etching
  • the present invention provides that the insulating layer on the array substrate is arranged to include a plurality of first regions and a plurality of second regions, wherein the first region and the second region are alternated
  • the ground layer is disposed, and the thicknesses of the first region and the second region are different, and then the plurality of pixel electrodes are respectively disposed on the first region of the insulating layer, and the thickness of the first region and the second region of the insulating layer are different.
  • the electric field intensity between the pixel electrodes and the electric field strength above the pixel electrodes can be adjusted by adjusting the thicknesses of the first region and the second region of the insulating layer, and further, the electric field intensity between the pixel electrodes can be made as needed.
  • the difference between the electric field strengths above the pixel electrodes is kept within a predetermined range, so that the brightness between the pixel electrodes and above the pixel electrodes can be kept in a uniform state, which can avoid the water ripple phenomenon of the flat display panel, improve the image quality, and improve the user. Experience the comfort.
  • FIG. 1 is a schematic diagram of electric field distribution of a conventional array substrate when placed in an electric field.
  • FIG. 2 is a cross-sectional structural view showing an embodiment of a flat display panel of the present invention.
  • FIG. 3 is a schematic view showing an electric field distribution of an array substrate in the flat display panel of FIG. 2 when placed in an electric field.
  • FIG. 4 is a flow chart showing an embodiment of a method of manufacturing an array substrate of the present invention.
  • FIG. 2 is a cross-sectional structural view of an embodiment of a flat display panel of the present invention.
  • the flat display panel 100 includes an array substrate 10, a color filter substrate 30, and a liquid crystal layer 20 disposed between the color filter 30 and the array substrate 10.
  • the array substrate 10 includes a substrate 12, a common electrode 14, an insulating layer 16, and a plurality of pixel electrodes 18.
  • the substrate 12 is formed on the bottommost layer of the array substrate 10 (refer to the view of FIG. 2 for reference).
  • the common electrode 14 is disposed on the substrate 12.
  • the common electrode 14 may be made of a transparent conductive material or any other material that is commonly used as a common electrode, such as a metal material.
  • the insulating layer 16 includes a plurality of first regions 162 and a plurality of second regions 164, the first regions 162 and the second regions 164 being alternately disposed, wherein the first regions 162 and the second regions 164 are different in thickness.
  • the materials of the first region 162 and the second region 164 may be made of the same material or different materials.
  • a plurality of pixel electrodes 18 are respectively disposed on the first region 162 of the insulating layer 16 such that each of the pixel electrodes 18 is spaced apart from the insulating layer 16.
  • These pixel electrodes 18 may be made of a transparent conductive material or any other material made of a pixel electrode, such as a material such as polysilicon.
  • the liquid crystal layer 20 is disposed between the color filter substrate 30 and the array substrate 10, and the liquid crystal layer 20 is filled with liquid crystal.
  • the material of the liquid crystal and the color filter substrate filled in the conventional flat display panel can be applied to the liquid crystal and color filter substrate 30 filled in the present invention.
  • the insulating layer 16 on the array substrate 10 is disposed to include a plurality of first regions 162 and a plurality of second regions 164, wherein the first region 162 and the second region 164 are alternately disposed, and first The thickness of the region 162 and the second region 164 are different, and a plurality of pixel electrodes 18 are respectively disposed on the first region 162 of the insulating layer 16.
  • the thicknesses of the first region 162 and the second region 164 of the insulating layer 16 are different, In this way, the electric field intensity between the pixel electrodes 18 and the electric field strength above the pixel electrode 18 can be adjusted by adjusting the thicknesses of the first region 162 and the second region 164 of the insulating layer 16, thereby improving the drawing of the flat display panel. Quality provides the basis.
  • the difference in thickness between the first region 162 and the second region 164 may be set such that the difference between the electric field intensity between the pixel electrodes 18 and the electric field strength above the pixel electrode 18 is maintained within a predetermined range.
  • the predetermined range means that the difference between the electric field intensity between the pixel electrodes 18 and the electric field strength above the pixel electrode 18 is adjusted within a controllable electric field strength range within a predetermined range of the electric field strength, according to actual needs.
  • the difference in thickness between the first region 162 and the second region 164 is also a range interval.
  • the flat display panel does not exhibit a significant water ripple phenomenon, and the thickness of the first region 162 and the second region 164 is adjusted.
  • the difference range is such that the difference between the electric field intensity between the pixel electrodes 18 and the electric field strength above the pixel electrode 18 is kept within a predetermined range.
  • the difference in thickness between the first region 162 and the second region 164 is set such that the difference between the electric field intensity between the pixel electrodes 18 and the electric field strength above the pixel electrode 18 is zero, at this time, the pixel electrode 18 There is no case where the two parts above and the pixel electrode 18 are alternately bright and dark, and the flat display panel has no water ripple phenomenon.
  • the magnitude of the thickness of each of the first region 162 and the second region 164 is not limited as long as the difference in thickness between the first region 162 and the second region 164 can achieve an electric field intensity between the pixel electrodes 18 and above the pixel electrode 18.
  • the difference between the electric field strengths is kept within a predetermined range.
  • FIG. 3 is a schematic diagram of electric field distribution of the array substrate 10 in the flat display panel 100 of FIG.
  • the thickness of the first region 162 of the insulating layer 16 of the array substrate 100 is h1
  • the thickness of the second region 164 is h2, where h1> H2, the difference between the thickness of the first region 162 and the thickness of the second region 164 is ⁇ h.
  • the thickness difference ⁇ h formed by the first region 162 and the second region 164 adjusts the difference between the electric field intensity between the pixel electrode 18 and the electric field strength above the pixel electrode 18 within a predetermined range, even with a difference of zero. In this way, the electric field distribution between the pixel electrodes 18 and above the pixel electrode 18 is uniform, thereby improving the display effect; on the other hand, the aperture ratio between the pixel electrodes 18 is increased, so that the transmittance of the light between the pixel electrodes 18 is correspondingly The brightness is increased to thereby increase the brightness of the flat display panel area between the pixel electrodes 18, so that the display brightness of the flat display panel 100 is increased as a whole.
  • the thickness h1 of the first region 162 of the insulating layer 16 of the array substrate 100 may be smaller than the thickness h2 of the second region 164, that is, h1 ⁇ H2.
  • the material of the first region 162 of the insulating layer 16 is different from the material of the second region 164.
  • the dielectric constant of the material of the first region 162 is much larger than the dielectric constant of the second region 164 due to the dielectric constant and
  • the electric field strength is inversely proportional, so that when the first region 162 having a sufficiently high dielectric constant and the second region 164 having a sufficiently low dielectric constant are placed in the electric field, even if the thickness h1 of the first region 162 is smaller than the second The thickness h2 of the region 164, the difference between the electric field intensity between the pixel electrodes 18 disposed on the insulating layer 16 and the electric field strength above the pixel electrode 18 can also be maintained within a predetermined range.
  • the flat display panel of the present invention is configured to include an insulating layer on the array substrate to include a plurality of first regions and a plurality of second regions, wherein the first region and the second region are alternately disposed, and the first region and the second region
  • the thickness of the region is different, and a plurality of pixel electrodes are respectively disposed on the first region of the insulating layer, and the thickness of the first region and the second region of the insulating layer are different, and in this way, the first layer of the insulating layer can be adjusted
  • the thickness of a region and the second region thereby adjusting an electric field strength between the pixel electrodes and an electric field strength above the pixel electrode; and further, between the electric field intensity between the pixel electrodes and the electric field strength above the pixel electrodes, according to specific needs
  • the difference is kept within a predetermined range, and even the difference is zero, so that the brightness between the pixel electrodes and above the pixel electrodes can be maintained in a uniform state, which can avoid the water ripple phenomenon
  • the aperture ratio between the pixel electrodes can be increased, so that the transmittance of the light between the pixel electrodes is also increased accordingly, thereby increasing the brightness of the flat display panel region between the pixel electrodes, so that the plane is displayed as a whole.
  • the display brightness of the panel is increased, which can reduce the brightness of the backlight panel accordingly, saving power consumption and cost.
  • the present invention also provides an array substrate, which is an array substrate according to any of the above embodiments, and details are not described herein again.
  • FIG. 4 is a flow chart of an embodiment of a method for fabricating an array substrate of the present invention. The manufacturing method includes the following steps:
  • S101 forming a common electrode, an insulating layer, and a pixel electrode layer in this order on the substrate.
  • the common electrode can be made of a transparent conductive material or any other material made of a common electrode, such as a metal material;
  • An insulating layer is formed on the common electrode, and the material used for the insulating layer in the existing array substrate can be applied to the insulating layer in the present invention.
  • the material of the insulating layer can be the same material or Made of different materials;
  • a pixel electrode layer is formed on the insulating layer.
  • the pixel electrodes may be made of a transparent conductive material or any other material made of a pixel electrode, such as polysilicon.
  • a photoresist is coated on the pixel electrode layer to form a photoresist layer, which may be any existing photosensitive material such as a positive photoresist or a negative photoresist.
  • S103 Perform exposure development on the photoresist layer to form a patterned photoresist layer.
  • the array substrate on which the photoresist layer is formed in the step S102 is coated with a developer to dissolve the photoresist softened portion, and then exposed to light under a mask to perform a development process to finally form a patterned photoresist layer.
  • S104 etching the pixel electrode layer by using the patterned photoresist layer and using a first etching manner to form a plurality of pixel electrodes spaced apart.
  • the first etching method refers to all existing etching methods for the liquid crystal display process, and may be, for example, wet etching, dry etching, photo etching, X-ray etching, electron beam etching, and ion beam etching. Waiting for the way.
  • the first etching method described in the embodiment is wet etching, and the pixel electrode layer under the patterned photoresist layer is continuously etched by wet etching so that the pixel electrode layer is formed with a plurality of strips spaced apart. Pixel electrode.
  • S105 etching the insulating layer by using the patterned photoresist layer and using a second etching manner, so that the insulating layer forms an alternating plurality of first regions and a plurality of second regions, wherein the first region and the second region are Different thickness.
  • the second etching method refers to all existing etching methods for the liquid crystal display process, and may be, for example, wet etching, dry etching, photo etching, X-ray etching, electron beam etching, and ion beam etching. Waiting for the way.
  • the second etching mode is dry etching
  • the insulating layer located under each of the two pixel electrodes is continuously etched by dry etching to form the insulating layer to form a plurality of alternating first regions and a plurality of second portions. a region in which the thicknesses of the first region and the second region are different.
  • the first step is further employed.
  • the etching method etches the insulating layer such that the insulating layer forms a plurality of first regions and a plurality of second regions having different thicknesses, and the manufacturing method can adjust the thicknesses of the first region and the second region of the insulating layer Adjusting the electric field strength between the pixel electrodes and the electric field strength above the pixel electrodes is simple and quick, and can be widely applied.
  • the step of S105 further includes etching the insulating layer by using the patterned photoresist layer and using a second etching manner, so that the insulating layer forms an alternating plurality of first regions and a plurality of second regions, the first region and the second region having different thicknesses, wherein a difference in thickness between the first region and the second region is set between an electric field intensity between the pixel electrodes and an electric field strength above the pixel electrode The difference remains within the predetermined range.
  • the predetermined range refers to adjusting the difference between the electric field strength between the pixel electrodes and the electric field strength above the pixel electrode according to actual needs within a controllable electric field strength range, within a predetermined range of the electric field strength, the first region and
  • the difference in thickness of the second region is also a range interval.
  • the planar display panel does not exhibit a significant water ripple phenomenon after the array substrate is applied to the flat display panel.
  • the difference in thickness between the one region and the second region is such that the difference between the electric field intensity between the pixel electrodes and the electric field strength above the pixel electrodes is maintained within a predetermined range.
  • the step of controlling the rate and time of the second etching mode is further included to ensure that the difference in thickness between the formed first region and the second region enables the pixel electrode The difference between the electric field strength between the electric field and the electric field strength above the pixel electrode is kept within a predetermined range.
  • the step of S105 further includes setting a difference in thickness between the first region and the second region such that a difference between an electric field intensity between the pixel electrodes and an electric field strength above the pixel electrode is zero. There is no light and dark alternating between the pixel electrodes and the pixel electrodes. After the prepared array substrate is applied to the flat display panel, the flat display panel has no water ripple phenomenon.
  • the first region and the second region do not define the respective thicknesses, as long as the difference in thickness between the first region and the second region can realize the pixel electrode.
  • the difference between the electric field strength and the electric field strength above the pixel electrode may be maintained within a predetermined range.
  • the thickness of the first region is greater than the thickness of the second region or The thickness of one region is smaller than the thickness of the second region.
  • the manufacturing method of the array substrate further includes the step of stripping the photoresist layer after the step of S105.
  • the second etching is further employed.
  • the insulating layer is etched such that the insulating layer forms a plurality of first regions and a plurality of second regions having different thicknesses, by which the thicknesses of the first region and the second region of the insulating layer can be adjusted Adjusting the electric field strength between the pixel electrodes and the electric field strength above the pixel electrodes; and further maintaining the difference between the electric field intensity between the pixel electrodes and the electric field strength above the pixel electrodes in a predetermined range by a second etching manner according to specific needs The difference is even zero, so that the brightness between the pixel electrodes and above the pixel electrodes can be kept in a uniform state, which can avoid the water ripple phenomenon of the flat display panel, improve the image quality, and improve the user's experience comfort.
  • the method for manufacturing the array substrate of the present invention is simple and can be widely applied to industrial production.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Geometry (AREA)

Abstract

一种阵列基板（10）、平面显示面板（100）及阵列基板（10）的制造方法。该阵列基板（10）包括基板（12），设置在该基板（12）上的公共电极（14），设置在该公共电极（14）上的绝缘层（16），其中，该绝缘层（16）包括多个第一区域（162）和多个第二区域（164），该第一区域（162）和该第二区域（164）交替地进行设置；多个像素电极（18），分别设置在该绝缘层（16）的该第一区域（162）上；其中，该第一区域（162）和该第二区域（164）的厚度不同。通过这种方式，能够调整像素电极（18）之间的电场强度和像素电极（18）上方的电场强度，从而为提高平面显示面板（100）的画质提供基础。

Description

阵列基板、平面显示面板及阵列基板的制造方法
【技术领域】
本发明涉及液晶显示技术领域，特别是涉及一种阵列基板、平面显示面板及阵列基板的制造方法。
【背景技术】
如图1所示，现有的边缘场开关模式（fringe-field switching，FFS）的阵列基板包括：一基板1；一公共电极2，设置在基板1上；一绝缘层3，设置在公共电极2上；以及多个像素电极4，间隔设置在绝缘层3上，从图1中可以看出，现有的阵列基板的设计使得像素电极之间的电场强度和像素电极上方的电场强度之间形成较大的差异。
当该阵列基板应用至平面显示面板中时，由于像素电极上方和像素电极之间的电场强度不同，使得像素电极上方和像素电极之间这两部分出现亮暗交替的情况，导致平面显示面板呈现水波纹现象，直接影响到平面显示面板的画质。
【发明内容】
本发明主要解决的技术问题是提供一种阵列基板、平面显示面板及阵列基板的制造方法，能够调整像素电极之间的电场强度和像素电极上方的电场强度，从而为提高平面显示面板的画质提供基础。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种阵列基板，包括：
基板；
公共电极，设置在所述基板上；
绝缘层，设置在所述公共电极上，其中，所述绝缘层包括多个第一区域和多个第二区域，所述第一区域和所述第二区域交替地进行设置；
多个像素电极，分别设置在所述绝缘层的所述第一区域上；
其中，所述第一区域和所述第二区域的厚度不同，且所述第一区域的厚度大于所述第二区域的厚度，所述公共电极和所述像素电极采用透明导电材质制成。
其中，所述第一区域与所述第二区域的厚度差设定为使得所述像素电极之间的电场强度和所述像素电极上方的电场强度之间的差异保持在预定范围内。
其中，所述第一区域与所述第二区域的厚度差设定为使得像素电极之间的电场强度和所述像素电极上方的电场强度之间的差异为零。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种阵列基板，其包括：
基板；
公共电极，设置在所述基板上；
绝缘层，设置在所述公共电极上，其中，所述绝缘层包括多个第一区域和多个第二区域，所述第一区域和所述第二区域交替地进行设置；
多个像素电极，分别设置在所述绝缘层的所述第一区域上；
其中，所述第一区域和所述第二区域的厚度不同。
其中，所述第一区域的厚度大于所述第二区域的厚度。
其中，所述第一区域与所述第二区域的厚度差设定为使得所述像素电极之间的电场强度和所述像素电极上方的电场强度之间的差异保持在预定范围内。
其中，所述第一区域与所述第二区域的厚度差设定为使得像素电极之间的电场强度和所述像素电极上方的电场强度之间的差异为零。
其中，所述公共电极和所述像素电极采用透明导电材质制成。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种平面显示面板，包括：
彩色滤光片基板；
阵列基板，与所述彩色滤光片基板相对；
液晶层，设置在所述彩色滤光片基板与所述阵列基板之间；
其中，所述阵列基板包括：
基板；
公共电极，设置在所述基板上；
绝缘层，设置在所述公共电极上，其中，所述绝缘层包括多个第一区域和多个第二区域，所述第一区域和所述第二区域交替地进行设置；
多个像素电极，分别设置在所述绝缘层的所述第一区域上；
其中，所述第一区域和所述第二区域的厚度不同。
其中，所述第一区域的厚度大于所述第二区域的厚度。
其中，所述第一区域与所述第二区域的厚度差设定为使得所述像素电极之间的电场强度和所述像素电极上方的电场强度之间的差异保持在预定范围内。
为解决上述技术问题，本发明采用的又一技术方案是：提供一种阵列基板的制造方法，包括：
在基板上依次形成公共电极、绝缘层和像素电极层；
在所述像素电极层上涂布光阻层；
对所述光阻层进行曝光显影以形成图案化的光阻层；
利用图案化的光阻层并采用第一蚀刻方式对所述像素电极层进行蚀刻，以形成间隔的多个像素电极；
利用图案化的光阻层并采用第二蚀刻方式对所述绝缘层进行蚀刻，以使所述绝缘层形成交替的多个第一区域和多个第二区域，其中，所述第一区域和所述第二区域的厚度不同。
其中，所述第一蚀刻方式为湿蚀刻，而所述第二蚀刻方式为干蚀刻。
本发明的有益效果是：区别于现有技术的情况，本发明通过将阵列基板上的绝缘层设置成包括多个第一区域和多个第二区域，其中，第一区域和第二区域交替地进行设置，且第一区域和第二区域的厚度不同，再将多个像素电极分别设置在该绝缘层的第一区域上，由于绝缘层的第一区域和第二区域的厚度不同，通过这种方式，能够通过调整绝缘层的第一区域和第二区域的厚度从而调整像素电极之间的电场强度和像素电极上方的电场强度，根据需要，进一步可以使得像素电极之间的电场强度和像素电极上方的电场强度之间的差异保持在预定范围内，从而可以使得像素电极之间和像素电极上方的亮度保持在均匀状态，能够避免平面显示面板出现水波纹现象，提高画质，提高用户的体验舒适度。
【附图说明】
图1是现有阵列基板在置于电场中时的电场分布示意图。
图2是本发明平面显示面板的一实施方式的剖视结构示意图。
图3是图2的平面显示面板中的阵列基板在置于电场中时的电场分布示意图。
图4是本发明阵列基板的制造方法的一实施方式的流程图。
【具体实施方式】
下面结合附图和实施方式对本发明进行详细说明。
请参阅图2，图2是本发明平面显示面板的一实施方式的剖视结构示意图。
平面显示面板100包括阵列基板10、彩色滤光片基板30以及设置在彩色滤光片30和阵列基板10之间的液晶层20。
阵列基板10包括基板12、公共电极14、绝缘层16以及多个像素电极18。
基板12形成在该阵列基板10的最底层（以图2的视图作为参考）。
公共电极14设置在基板12上，该公共电极14可以采用透明导电材质制成或者其他现有制成公共电极的任何材质制成，例如金属材料等材质。
绝缘层16包括多个第一区域162和多个第二区域164，第一区域162和第二区域164交替地进行设置，其中第一区域162和第二区域164的厚度不同。其中，第一区域162和第二区域164的材质可由相同的材质制成，也可由不同的材质制成。
多个像素电极18分别设置在绝缘层16的第一区域162上，以使得每一像素电极18间隔设置在绝缘层16上。这些像素电极18可采用透明导电材质制成或者其他现有制成像素电极的任何材质制成，例如多晶硅等材料。
液晶层20设置在彩色滤光片基板30和阵列基板10之间，液晶层20填充有液晶。其中，现有平面显示面板中填充的液晶和彩色滤光片基板的材质均可适用于本发明填充的液晶和彩色滤光片基板30。
本实施方式中通过将阵列基板10上的绝缘层16设置成包括多个第一区域162和多个第二区域164，其中，第一区域162和第二区域164交替地进行设置，且第一区域162和第二区域164的厚度不同，再将多个像素电极18分别设置在该绝缘层16的第一区域162上，由于绝缘层16的第一区域162和第二区域164的厚度不同，通过这种方式，能够通过调整绝缘层16的第一区域162和第二区域164的厚度从而调整像素电极18之间的电场强度和像素电极18上方的电场强度，从而为提高平面显示面板的画质提供基础。
进一步地，该第一区域162与第二区域164的厚度差可设定为使像素电极18之间的电场强度和像素电极18上方的电场强度之间的差异保持在预定范围内。所述预定范围是指根据实际需要，调整像素电极18之间的电场强度和像素电极18上方的电场强度之间的差异在可控的电场强度范围之内，在该电场强度的预定范围内，第一区域162与第二区域164的厚度差也是一个范围区间。例如，为了使像素电极18之间和像素电极18上方这两部分不出现明显的亮暗交替的情况，平面显示面板不呈现明显的水波纹现象，调整第一区域162与第二区域164的厚度差范围，从而使得像素电极18之间的电场强度和像素电极18上方的电场强度之间的差异保持在预定范围内。更进一步地，第一区域162与第二区域164的厚度差设定为使得像素电极18之间的电场强度和像素电极18上方的电场强度之间的差异为零，此时，像素电极18之间和像素电极18上方这两部分没有亮暗交替的情况，平面显示面板没有水波纹现象。
其中，对于第一区域162和第二区域164各自的厚度的大小并不限定，只要该第一区域162与第二区域164的厚度差能够实现像素电极18之间的电场强度和像素电极18上方的电场强度之间的差异保持在预定范围内即可。
具体地，请参阅图3，图3是图2中平面显示面板100中的阵列基板10在置于电场中时的电场分布示意图。该阵列基板100的绝缘层16的第一区域162的厚度为h1，第二区域164的厚度为h2，其中，h1> h2，第一区域162的厚度与第二区域164的厚度差为Δh。
该第一区域162与第二区域164形成的厚度差Δh，一方面可调节像素电极18之间的电场强度和像素电极18上方的电场强度之间的差异保持在预定范围内，甚至差异为零，这样使得像素电极18之间和像素电极18上方的电场分布均匀一致，提升显示效果；另一方面提升像素电极18之间的开口率，使得像素电极18之间的光线的穿透率也相应提升，从而提升位于像素电极18之间的平面显示面板区域的亮度，这样从整体上使得该平面显示面板100的显示亮度增加。
当然，在其他一些实施例中，该阵列基板100的绝缘层16的第一区域162的厚度h1可小于第二区域164的厚度h2，即h1< h2。具体地，制成该绝缘层16的第一区域162的材料与第二区域164的材料不同，第一区域162材料的介电常数远大于第二区域164的介电常数，由于电介常数与电场强度呈反比关系，因此当具有足够高的介电常数的第一区域162和具有足够低的介电常数的第二区域164置于电场中时，即便第一区域162的厚度h1小于第二区域164的厚度h2，设置在绝缘层16上的像素电极18之间的电场强度和像素电极18上方的电场强度之间的差异也可保持在预定范围内。
本发明的平面显示面板通过将阵列基板上的绝缘层设置成包括多个第一区域和多个第二区域，其中，第一区域和第二区域交替地进行设置，且第一区域和第二区域的厚度不同，再将多个像素电极分别设置在该绝缘层的第一区域上，由于绝缘层的第一区域和第二区域的厚度不同，通过这种方式，能够通过调整绝缘层的第一区域和第二区域的厚度从而调整像素电极之间的电场强度和像素电极上方的电场强度；并根据具体需要，进一步可以使得像素电极之间的电场强度和像素电极上方的电场强度之间的差异保持在预定范围内，甚至差异为零，从而可以使得像素电极之间和像素电极上方的亮度可保持在均匀一致状态，能够避免平面显示面板出现水波纹现象，提高画质，提高用户的体验舒适度。而且还可以提升像素电极之间的开口率，使得像素电极之间的光线的穿透率也相应提升，从而提升位于像素电极之间的平面显示面板区域的亮度，这样从整体上使得该平面显示面板的显示亮度增加，如此可相应地降低背光板的亮度，节省耗电及花费。
本发明还提供一种阵列基板，该阵列基板为上述任一实施方式所述的阵列基板，在此不再赘述。
另外，本发明还提供一种阵列基板的制造方法，请参阅图4，图4是本发明阵列基板的制造方法的一实施方式的流程图。该制造方法包括如下步骤：
S101：在基板上依次形成公共电极、绝缘层和像素电极层。
首先形成一基板；
然后在该基板上形成一层公共电极，该公共电极可以采用透明导电材质制成或者其他现有制成公共电极的任何材质制成，例如金属材料等材质；
再在该公共电极上形成一层绝缘层，现有阵列基板中的绝缘层所采用的材质均可适用于本发明中的绝缘层，其中，该绝缘层的材质可采用相同的材质，也可采用不同的材质混合制成；
最后在该绝缘层上形成一层像素电极层，这些像素电极可采用透明导电材质制成或者其他现有制成像素电极的任何材质制成，例如多晶硅等材料。
S102：在像素电极层上涂布光阻层。
在像素电极层上涂覆光阻剂以形成光阻层，该光阻剂可为正向光阻或负向光阻等任何现有的光敏材料。
S103：对光阻层进行曝光显影以形成图案化的光阻层。
将S102步骤中形成有光阻层的阵列基板涂覆显影剂以溶解光阻软化部分，再在光罩下进行曝光后进行显影制程，最终形成图案化的光阻层。
S104：利用图案化的光阻层并采用第一蚀刻方式对像素电极层进行蚀刻，以形成间隔的多个像素电极。
第一蚀刻方式是指现有的用于液晶显示器制程的所有蚀刻方式，例如可以是湿蚀刻方式，还可以是干蚀刻、光刻蚀、X射线刻蚀、电子束刻蚀和离子束刻蚀等方式。
本实施方式中所述的第一蚀刻方式为湿蚀刻，采用湿蚀刻方式继续对已图案化的光阻层下方的像素电极层进行蚀刻，以使该像素电极层形成有间隔的多个条形像素电极。
S105：利用图案化的光阻层并采用第二蚀刻方式对绝缘层进行蚀刻，以使绝缘层形成交替的多个第一区域和多个第二区域，其中，第一区域和第二区域的厚度不同。
第二蚀刻方式是指现有的用于液晶显示器制程的所有蚀刻方式，例如可以是湿蚀刻方式，还可以是干蚀刻、光刻蚀、X射线刻蚀、电子束刻蚀和离子束刻蚀等方式。
本实施方式中第二蚀刻方式为干蚀刻，采用干蚀刻方式继续对位于每两个像素电极之间下方的绝缘层进行蚀刻，以使绝缘层形成交替的多个第一区域和多个第二区域，其中第一区域和第二区域的厚度不同。
本实施方式中的阵列基板的制造方法，只需在现有阵列基板的制造方法中的采用第一蚀刻方式对像素电极层进行蚀刻以形成间隔的多个像素电极的步骤之后，进一步地采用第二蚀刻方式对绝缘层进行蚀刻，以使绝缘层形成交替的厚度不同的多个第一区域和多个第二区域，该制造方法能够通过调整绝缘层的第一区域和第二区域的厚度从而调整像素电极之间的电场强度和像素电极上方的电场强度，简单快捷，可广泛适用。
进一步地，在其他一些实施例中，在S105的步骤中还包括通过利用图案化的光阻层并采用第二蚀刻方式对绝缘层进行蚀刻，以使绝缘层形成交替的多个第一区域和多个第二区域，第一区域和第二区域的厚度不同，其中该第一区域与第二区域的厚度差设定为使像素电极之间的电场强度和像素电极上方的电场强度之间的差异保持在预定范围内。预定范围是指根据实际需要，调整像素电极之间的电场强度和像素电极上方的电场强度之间的差异在可控的电场强度范围之内，在该电场强度的预定范围内，第一区域与第二区域的厚度差也是一个范围区间。例如，为了使像素电极之间和像素电极上方这两部分不出现明显的亮暗交替的情况，制成的阵列基板应用至平面显示面板后该平面显示面板不呈现明显的水波纹现象，调整第一区域与第二区域的厚度差范围，从而使得像素电极之间的电场强度和像素电极上方的电场强度之间的差异保持在预定范围内。
进一步地，在采用第二蚀刻方式对绝缘层进行蚀刻时，还包括控制该第二蚀刻方式的速率和时间的步骤，以保证形成的第一区域和第二区域的厚度差能够使得像素电极之间的电场强度和像素电极上方的电场强度之间的差异保持在预定范围内。
更进一步地，在S105的步骤中还包括该第一区域与第二区域的厚度差设定为使得像素电极之间的电场强度和像素电极上方的电场强度之间的差异为零，此时，像素电极之间和像素电极上方这两部分没有亮暗交替的情况，制成的阵列基板应用至平面显示面板后该平面显示面板没有水波纹现象。
需要说明的是，当采用第二蚀刻方式对绝缘层进行蚀刻后，第一区域和第二区域并不限定各自的厚度的大小，只要该第一区域与第二区域的厚度差能够实现像素电极之间的电场强度和像素电极上方的电场强度之间的差异保持在预定范围内即可，例如采用第二蚀刻方式对绝缘层进行蚀刻后，第一区域的厚度大于第二区域的厚度或者第一区域的厚度小于第二区域的厚度等其他状态。
可以理解的，该阵列基板的制造方法在S105的步骤之后进一步还包括剥离光阻层的步骤。
本发明的阵列基板的制造方法，只需在现有阵列基板的制造方法中的采用第一蚀刻方式对像素电极层进行蚀刻以形成间隔的多个像素电极的步骤之后，进一步地采用第二蚀刻方式对绝缘层进行蚀刻，以使绝缘层形成交替的厚度不同的多个第一区域和多个第二区域，通过这种方式，能够通过调整绝缘层的第一区域和第二区域的厚度从而调整像素电极之间的电场强度和像素电极上方的电场强度；并根据具体需要，进一步通过第二蚀刻方式使得像素电极之间的电场强度和像素电极上方的电场强度之间的差异保持在预定范围内，甚至差异为零，从而可以使得像素电极之间和像素电极上方的亮度可保持在均匀一致状态，能够避免平面显示面板出现水波纹现象，提高画质，提高用户的体验舒适度。本发明的阵列基板的制造方法简便，可广泛适用于工业生产。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (13)

  1. 一种阵列基板，其特征在于，包括：
    基板；
    公共电极，设置在所述基板上；
    绝缘层，设置在所述公共电极上，其中，所述绝缘层包括多个第一区域和多个第二区域，所述第一区域和所述第二区域交替地进行设置；
    多个像素电极，分别设置在所述绝缘层的所述第一区域上；
    其中，所述第一区域和所述第二区域的厚度不同，且所述第一区域的厚度大于所述第二区域的厚度，所述公共电极和所述像素电极采用透明导电材质制成。
  2. 根据权利要求1所述的阵列基板，其特征在于，所述第一区域与所述第二区域的厚度差设定为使得所述像素电极之间的电场强度和所述像素电极上方的电场强度之间的差异保持在预定范围内。
  3. 根据权利要求1所述的阵列基板，其特征在于，所述第一区域与所述第二区域的厚度差设定为使得像素电极之间的电场强度和所述像素电极上方的电场强度之间的差异为零。
  4. 一种阵列基板，其特征在于，包括：
    基板；
    公共电极，设置在所述基板上；
    绝缘层，设置在所述公共电极上，其中，所述绝缘层包括多个第一区域和多个第二区域，所述第一区域和所述第二区域交替地进行设置；
    多个像素电极，分别设置在所述绝缘层的所述第一区域上；
    其中，所述第一区域和所述第二区域的厚度不同。
  5. 根据权利要求4所述的阵列基板，其特征在于，所述第一区域的厚度大于所述第二区域的厚度。
  6. 根据权利要求5所述的阵列基板，其特征在于，所述第一区域与所述第二区域的厚度差设定为使得所述像素电极之间的电场强度和所述像素电极上方的电场强度之间的差异保持在预定范围内。
  7. 根据权利要求6所述的阵列基板，其特征在于，所述第一区域与所述第二区域的厚度差设定为使得像素电极之间的电场强度和所述像素电极上方的电场强度之间的差异为零。
  8. 根据权利要求4所述的阵列基板，其特征在于，所述公共电极和所述像素电极采用透明导电材质制成。
  9. 一种平面显示面板，其特征在于，包括：
    彩色滤光片基板；
    阵列基板，与所述彩色滤光片基板相对；
    液晶层，设置在所述彩色滤光片基板与所述阵列基板之间；
    其中，所述阵列基板包括：
    基板；
    公共电极，设置在所述基板上；
    绝缘层，设置在所述公共电极上，其中，所述绝缘层包括多个第一区域和多个第二区域，所述第一区域和所述第二区域交替地进行设置；
    多个像素电极，分别设置在所述绝缘层的所述第一区域上；
    其中，所述第一区域和所述第二区域的厚度不同。
  10. 根据权利要求9所述的平面显示面板，其特征在于，所述第一区域的厚度大于所述第二区域的厚度。
  11. 根据权利要求10所述的平面显示面板，其特征在于，所述第一区域与所述第二区域的厚度差设定为使得所述像素电极之间的电场强度和所述像素电极上方的电场强度之间的差异保持在预定范围内。
  12. 一种阵列基板的制造方法，其特征在于，包括：
    在基板上依次形成公共电极、绝缘层和像素电极层；
    在所述像素电极层上涂布光阻层；
    对所述光阻层进行曝光显影以形成图案化的光阻层；
    利用图案化的光阻层并采用第一蚀刻方式对所述像素电极层进行蚀刻，以形成间隔的多个像素电极；
    利用图案化的光阻层并采用第二蚀刻方式对所述绝缘层进行蚀刻，以使所述绝缘层形成交替的多个第一区域和多个第二区域，其中，所述第一区域和所述第二区域的厚度不同。
  13. 根据权利要求12所述的阵列基板的制造方法，其特征在于，所述第一蚀刻方式为湿蚀刻，而所述第二蚀刻方式为干蚀刻。
PCT/CN2015/076727 2015-03-31 2015-04-16 阵列基板、平面显示面板及阵列基板的制造方法 Ceased WO2016155041A1 (zh)

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