WO2016151820A1 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- WO2016151820A1 WO2016151820A1 PCT/JP2015/059240 JP2015059240W WO2016151820A1 WO 2016151820 A1 WO2016151820 A1 WO 2016151820A1 JP 2015059240 W JP2015059240 W JP 2015059240W WO 2016151820 A1 WO2016151820 A1 WO 2016151820A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- emitting device
- substrate
- light emitting
- layer
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims abstract description 165
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 239000012044 organic layer Substances 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 4
- 238000000295 emission spectrum Methods 0.000 claims description 2
- 238000005192 partition Methods 0.000 description 16
- 238000000605 extraction Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- -1 polyethylene naphthalate Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000004876 x-ray fluorescence Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BSUHXFDAHXCSQL-UHFFFAOYSA-N [Zn+2].[W+4].[O-2].[In+3] Chemical compound [Zn+2].[W+4].[O-2].[In+3] BSUHXFDAHXCSQL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to a light emitting device.
- the organic EL element has a configuration in which an organic layer is sandwiched between a first electrode and a second electrode.
- Such a light-emitting device may be required to be transparent depending on the application.
- the first electrode and the second electrode may be formed of a transparent conductive material.
- Patent Document 1 describes that a correction layer having the same material and the same thickness as the cathode is provided in a region where the cathode is not formed.
- a metal thin film having a low work function such as magnesium, aluminum and calcium is described. The correction layer is formed on the cathode with the insulating layer interposed therebetween.
- Patent Document 2 describes a substrate with a transparent electrode in which a refractive index control layer and a transparent electrode layer are sequentially formed on a transparent substrate.
- the average refractive index of the refractive index control layer is 1.45 to 1.60.
- the refractive index control layer is a laminate of two or more layers having a total film thickness of 1000 to 2500 nm.
- the invisibility of the transparent electrode layer when viewed from the transparent substrate side is improved by the refractive index control layer.
- the refractive index of the insulating layer forming the light emitting portion is different from that of the electrode. Therefore, the difference in refractive index between the interface between the refractive index control layer and the insulating layer and the interface between the refractive index control layer and the electrode are different. For this reason, the edge of an electrode may be conspicuous when visually recognized from the opposite side to the transparent base material side.
- the edge of the electrode is less noticeable when viewed from the side opposite to the transparent substrate side, and the light extraction efficiency of the light emitting device is not reduced as an example. Can be mentioned.
- the invention of claim 1 has a light-transmitting property, a substrate having a refractive index of n 1, A first electrode formed on the substrate, having translucency and having a refractive index of n 2 ; An insulating layer formed on the substrate and the first electrode, having an opening overlapping the first electrode and having a refractive index of n 3 ; An organic layer located within the opening; A translucent second electrode formed on the organic layer; An intermediate layer formed in at least a part of a region between the substrate and the first electrode and having a refractive index of n 4 ; With n 4 is a light emitting device between n 1 and n 2 .
- the invention according to claim 13 is a substrate having translucency, A first electrode formed on the substrate and having translucency; An insulating layer formed on the substrate and the first electrode and having an opening overlapping the first electrode; An organic layer located within the opening; A translucent second electrode formed on the organic layer; An intermediate layer formed in at least a part of a region between the substrate and the first electrode; With The intermediate layer is a light emitting device including a material constituting the first electrode and a material constituting the insulating layer.
- the invention according to claim 14 is a substrate having translucency, A first electrode formed on the substrate and having translucency; An insulating layer formed on the substrate and the first electrode and having an opening overlapping the first electrode; An organic layer located within the opening; A translucent second electrode formed on the organic layer; An intermediate layer formed in at least a part of a region between the substrate and the first electrode; With The intermediate layer is a light emitting device containing silicon, oxygen, and nitrogen.
- FIG. 2 is a cross-sectional view taken along the line AA in FIG.
- FIG. 3 is a cross-sectional view taken along the line BB in FIG.
- FIG. 2 is a cross-sectional view taken along the line CC of FIG.
- translucency means transmitting at least visible light.
- FIG. 1 is a plan view showing a configuration of a light emitting device 10 according to the embodiment.
- FIG. 2 is a view in which the partition 170, the insulating layer 150, and the second electrode 130 are removed from FIG. 3 is a cross-sectional view taken along line AA in FIG. 1
- FIG. 4 is a cross-sectional view taken along line BB in FIG. 1
- FIG. 5 is a cross-sectional view taken along line CC in FIG.
- the light emitting device 10 includes a substrate 100, a first electrode 110, an insulating layer 150, an organic layer 120, a second electrode 130, and an intermediate layer 200.
- the substrate 100 is a light-transmitting substrate.
- the first electrode 110 is formed on the substrate 100 and has translucency.
- the insulating layer 150 is formed on the substrate 100 and the first electrode 110, and has an opening 152 that overlaps the first electrode 110.
- the organic layer 120 is located at least in the opening 152.
- the second electrode 130 is formed on the organic layer 120 and has translucency.
- the intermediate layer 200 is formed on at least a part of a region of the side surface of the first electrode 110 that overlaps the insulating layer 150.
- the refractive index of the intermediate layer 200 is between the refractive index of the first electrode 110 and the refractive index of the insulating layer 150.
- the light emitting device 10 has a wiring 116.
- the wiring 116 is formed on the substrate 100 and has translucency.
- the insulating layer 150 is also formed on the wiring 116.
- the intermediate layer 200 is formed in at least a part of a region overlapping the insulating layer 150 on the side surface of the wiring 116.
- the refractive index of the intermediate layer 200 is between the refractive index of the wiring 116 and the refractive index of the insulating layer 150. Details will be described below.
- the light emitting device 10 is a display device, and includes a substrate 100, a first electrode 110, a plurality of first terminals 112, a plurality of second terminals 132, a light emitting unit 140, an insulating layer 150, a plurality of openings 152, and a plurality.
- the opening 154, the plurality of lead wires 114, the organic layer 120, the second electrode 130, the plurality of lead wires 134, and the plurality of partition walls 170 are provided.
- the substrate 100 is formed of a light-transmitting material such as glass or a light-transmitting resin.
- the substrate 100 is, for example, a polygon such as a rectangle.
- the substrate 100 may have flexibility.
- the thickness of the substrate 100 is, for example, not less than 10 ⁇ m and not more than 1000 ⁇ m.
- the substrate 100 is glass, the thickness of the substrate 100 is, for example, 200 ⁇ m or less.
- the substrate 100 is formed using, for example, PEN (polyethylene naphthalate), PES (polyethersulfone), PET (polyethylene terephthalate), or polyimide.
- the substrate 100 is a resin
- an inorganic barrier film such as SiN x or SiON is formed on at least one surface (preferably both surfaces) of the substrate 100 in order to suppress moisture from permeating the substrate 100.
- the refractive index n 1 of the substrate 100 is, for example, not less than 1.4 and not more than 1.6.
- the light emitting unit 140 is formed on the substrate 100 and has an organic EL element.
- This organic EL element has a configuration in which a first electrode 110, an organic layer 120, and a second electrode 130 are laminated in this order.
- the first electrode 110 is formed on the substrate 100 and is a transparent electrode having translucency.
- the transparent conductive material constituting the transparent electrode is a metal-containing material, for example, a metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IWZO (Indium Tungsten Zinc Oxide), or ZnO (Zinc Oxide). is there.
- the thickness of the first electrode 110 is, for example, not less than 10 nm and not more than 500 nm.
- the first electrode 110 is formed using, for example, a sputtering method or a vapor deposition method using a mask.
- the first electrode 110 may be a thin metal material (for example, Ag or an Ag alloy), a carbon nanotube, or a conductive organic material such as PEDOT / PSS.
- Refractive index n 2 of the first electrode 110 is larger than the refractive index n 1 of the substrate 100, for example, is 1.8 to 2.2.
- the first electrode 110 extends in a line shape in the first direction (Y direction in FIGS. 1 and 2).
- the end portion of the first electrode 110 is electrically and physically connected to the lead wiring 114.
- the lead wiring 114 is formed using the same material as that of the first electrode 110. For this reason, the lead-out wiring 114 has translucency.
- the lead wiring 114 is integrated with the first electrode 110.
- the lead wiring 114 is connected to the first terminal 112. In the example shown in this figure, the end of the lead wiring 114 is the first terminal 112.
- An insulating layer 150 is formed on the conductor pattern to be the plurality of first electrodes 110 and on the substrate 100 positioned therebetween.
- the insulating layer 150 covers a part of the upper surface of the conductor pattern that becomes the first electrode 110.
- the insulating layer 150 is formed using a light-sensitive photosensitive resin material such as polyimide resin.
- the insulating layer 150 may be formed using a resin other than a polyimide resin, for example, an epoxy resin or an acrylic resin.
- Refractive index n 3 of insulating layer 150, the refractive index n 1 of the substrate 100 is located between the refractive index n 2 of the first electrode 110, for example, it is 1.6 to 1.8.
- a second electrode 130 is formed on the organic layer 120. Similar to the first electrode 110, the second electrode 130 is a transparent electrode having translucency. As the material constituting the second electrode 130, the materials exemplified as the material constituting the first electrode 110 can be used. However, the first electrode 110 and the second electrode 130 may be formed using different materials, or may be formed using the same material. The film thickness of the second electrode 130 and the method of forming the second electrode 130 are the same as the film thickness of the first electrode 110 and the method of forming the second electrode 130. However, the film thickness of the second electrode 130 may be different from the film thickness of the first electrode 110.
- the second electrode 130 extends in a second direction (X direction in FIG. 1) intersecting the first direction.
- a partition wall 170 is formed between the adjacent second electrodes 130.
- the partition wall 170 extends in parallel to the second electrode 130, that is, in the second direction, and is provided to separate the second electrode 130 from each other.
- the partition wall 170 has a trapezoidal cross-sectional shape (reverse trapezoidal shape). That is, the width of the upper surface of the partition wall 170 is larger than the width of the lower surface of the partition wall 170. Therefore, if the partition wall 170 is formed before the second electrode 130, the second electrode 130 is formed on one surface side of the substrate 100 by using an evaporation method or a sputtering method. Can be formed collectively.
- the partition wall 170 also has a function of dividing the organic layer 120.
- the base of the partition wall 170 is an insulating layer 150, for example.
- the partition 170 is, for example, a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed.
- the partition wall 170 may be made of a resin other than a polyimide resin, for example, an inorganic material such as an epoxy resin, an acrylic resin, or silicon dioxide.
- the light emitting device 10 may not have the partition wall 170.
- the second electrode 130 is formed in a predetermined pattern by using a mask at the time of sputtering or vapor deposition.
- the insulating layer 150 has a plurality of openings 152 and a plurality of openings 154.
- the opening 152 is located at the intersection of the first electrode 110 and the second electrode 130 on a plane parallel to the substrate 100. Specifically, the plurality of openings 152 are arranged in the direction in which the first electrode 110 extends (the Y direction in FIG. 1). The plurality of openings 152 are also arranged in the extending direction of the second electrode 130 (X direction in FIG. 1). For this reason, the plurality of openings 152 are arranged to form a matrix.
- the organic layer 120 In the region overlapping with the opening 152, the organic layer 120 is formed.
- the organic layer 120 has a light emitting layer. For this reason, the light emitting part 140 is located in each of the regions overlapping with the opening 152.
- the organic layer 120 has a configuration in which, for example, a hole injection layer, a light emitting layer, and an electron injection layer are stacked.
- a hole transport layer may be formed between the hole injection layer and the light emitting layer.
- an electron transport layer may be formed between the light emitting layer and the electron injection layer.
- the organic layer 120 may be formed by a vapor deposition method.
- at least one layer of the organic layer 120 for example, a layer in contact with the first electrode 110, may be formed by a coating method such as an inkjet method, a printing method, or a spray method. In this case, the remaining layers of the organic layer 120 are formed by vapor deposition.
- all the layers of the organic layer 120 may be formed using the apply
- the hole injection layer of the organic layer 120 is in contact with the first electrode 110, and the electron injection layer of the organic layer 120 is in contact with the second electrode 130.
- the layers constituting the organic layer 120 are shown to protrude to the outside of the opening 152.
- the organic layer 120 may or may not be continuously formed between adjacent openings 152 in the direction in which the partition 170 extends. Good.
- the organic layer 120 is not formed in the opening 154.
- the light emitting unit 140 is located in each of the regions overlapping with the opening 152.
- the first electrode 110 is a region that overlaps the opening 152 in the conductor pattern that becomes the first electrode 110 in the direction in which the conductor pattern that becomes the first electrode 110 extends.
- the edges in the width direction (both ends of the first electrode 110 in FIG. 4) of the upper surface are covered with the insulating layer 150.
- a portion located between adjacent first electrodes 110 in the conductor pattern to be the first electrode 110 can be defined as the wiring 116.
- the wiring 116 is covered with an insulating layer 150.
- the opening 154 is located in a region overlapping with one end side of each of the plurality of second electrodes 130 in plan view.
- the openings 154 are arranged along one side of the matrix formed by the openings 152. When viewed in a direction along this one side (for example, the Y direction in FIG. 1, ie, the direction along the first electrode 110), the openings 154 are arranged at a predetermined interval. A part of the lead wiring 134 is exposed from the opening 154.
- the lead wiring 134 is connected to the second electrode 130 through the opening 154.
- the lead-out wiring 134 is a wiring that electrically connects the second electrode 130 to the second terminal 132, and has a layer made of the same material as the first electrode 110. One end side of the lead wiring 134 is located below the opening 154, and the other end side of the lead wiring 134 is led out of the insulating layer 150. In the example shown in the drawing, the other end side of the lead-out wiring 134 is a second terminal 132.
- a conductive member such as FPC (Flexible Printed Circuit) is connected to the first terminal 112 and the second terminal 132.
- FPC Flexible Printed Circuit
- the first terminal 112 and the second terminal 132 are arranged along the same side of the substrate 100. For this reason, when FPC is used as the conductive member, the first terminal 112 and the second terminal 132 can be connected to one FPC.
- the light emitting device 10 has an intermediate layer 200.
- the intermediate layer 200 includes at least a part (preferably all) of the side surface of the first electrode 110 that overlaps the insulating layer 150 and at least a part of the side surface of the wiring 116 that overlaps the insulating layer 150 (preferably All).
- the intermediate layer 200 is also formed on the side surface of the first terminal 112, the side surface of the lead wiring 114, the side surface of the second terminal 132, and the side surface of the lead wiring 134.
- the thickness of the intermediate layer 200 is, for example, not less than 50 nm and not more than 500 nm.
- the refractive index n 4 of the intermediate layer 200 is between the refractive index n 2 of the first electrode 110 and the refractive index n 3 of the insulating layer 150.
- the intermediate layer 200 may be formed using both the material constituting the first electrode 110 and the material constituting the insulating layer 150, for example.
- the volume content of the same material as the first electrode 110 in the intermediate layer 200 is, for example, 30% or more and 70% or less. Note that the volume content of the same material as that of the first electrode 110 can be replaced with, for example, the area ratio of the same material as that of the first electrode 110 in the cross-sectional photograph of the intermediate layer 200.
- the intermediate layer 200 may be formed using a material containing silicon, oxygen, and nitrogen such as silicon oxynitride.
- the ratio of the nitrogen content of the intermediate layer 200 to the oxygen content of the intermediate layer 200 is, for example, 2 or more and 9 or less. Note that this ratio can be replaced with a peak height ratio in, for example, XRF (X-ray fluorescence) or EDX (Energy Dispersive X-ray Spectroscopy).
- the first electrode 110, the wiring 116, the first terminal 112, the second terminal 132, and the lead wirings 114 and 134 are formed on the substrate 100. These are formed using, for example, a sputtering method or a vapor deposition method using a mask. However, these may be formed using other methods.
- the intermediate layer 200 is formed on the side surface of the first electrode 110, the side surface of the first terminal 112, the side surface of the second terminal 132, the side surface of the wiring 116, and the side surfaces of the lead wires 114 and 134.
- the intermediate layer 200 is formed using the material constituting the first electrode 110 and the material constituting the insulating layer 150, the intermediate layer 200 is applied with, for example, the material constituting the first electrode 110, and the insulating layer It forms by apply
- the intermediate layer 200 is formed using a material containing silicon, oxygen, and nitrogen
- the intermediate layer 200 is formed using a vapor phase method such as a CVD method and a lithography method, for example.
- a photosensitive insulating film to be the insulating layer 150 is formed on the substrate 100 and the first electrode 110 by using, for example, a coating method. Thereafter, the insulating film is exposed and developed. Thereby, the insulating layer 150 is formed. In this step, openings 152 and 154 are also formed. Next, the partition 170, the organic layer 120, and the second electrode 130 are formed in this order.
- the substrate 100, the first electrode 110, and the second electrode 130 are translucent. Therefore, the light emitting device 10 becomes a transparent display.
- the refractive index n 3 of the refractive index n 2 and the insulating layer 150 of the first electrode 110 is different, the light is scattered at the interface side with the insulating layer 150 of the first electrode 110, as a result, the first electrode 110 The edge may be noticed by the user.
- at least a part (preferably all) of the region facing the insulating layer 150 among the side surfaces of the first electrode 110 is covered with the intermediate layer 200.
- Refractive index n 4 of the intermediate layer 200 is located between the refractive index n 3 of the refractive index n 2 and the insulating layer 150 of the first electrode 110. For this reason, compared with the case where the intermediate layer 200 is not provided, light is less likely to be scattered between the side surface of the first electrode 110 and the insulating layer 150, and thus the user is less likely to notice the edge of the first electrode 110. Become.
- the intermediate layer 200 is also formed on the side surface of the wiring 116, the side surface of the portion of the lead-out wiring 114 that is covered with the insulating layer 150, and the side surface of the portion of the lead-out wiring 134 that is covered with the insulating layer 150. ing. Therefore, light is less likely to be scattered between each of these side surfaces and the insulating layer 150. Therefore, the user is less likely to notice the edge of the wiring 116, the edge of the extraction wiring 114, and the edge of the extraction wiring 134.
- (Second Embodiment) 6, 7, and 8 are cross-sectional views of the light emitting device 10 according to the second embodiment, and correspond to FIGS. 3, 4, and 5 in the first embodiment, respectively.
- the light emitting device 10 according to the present embodiment has the same configuration as the light emitting device 10 according to the first embodiment, except for the layout of the intermediate layer 200.
- the insulating layer 150 covers the edges in the width direction (both ends of the first electrode 110 in FIG. 7) on the upper surface of the first electrode 110, as in the embodiment.
- the intermediate layer 200 is formed in at least a part (preferably all) of the region covered with the insulating layer 150 on the upper surface of the first electrode 110.
- the intermediate layer 200 is formed in at least a part of the region covered with the insulating layer 150 on the upper surface of the wiring 116.
- the insulating layer 150 and the intermediate layer 200 are formed on the entire surface of the wiring 116 in a cross section in a direction orthogonal to the direction in which the wiring 116 extends (Y direction in FIG. 1).
- the intermediate layer 200 is formed on the entire surface of the region covered with the insulating layer 150 in the wiring 116.
- the intermediate layer 200 is formed on the entire surface of the lead wire 134 covered with the insulating layer 150. Similarly, the intermediate layer 200 is formed on the entire surface of the lead wiring 114 covered with the insulating layer 150.
- the user is less likely to notice the edge of the first electrode 110, the edge of the wiring 116, the edge of the extraction wiring 114, and the edge of the extraction wiring 134.
- the intermediate layer 200 is also formed on the upper surface of the first electrode 110, the upper surface of the wiring 116, the upper surface of the extraction wiring 114, and the upper surface of the extraction wiring 134, the accuracy required for the position of the intermediate layer 200 is low. Become. Therefore, the manufacturing cost of the light emitting device 10 can be reduced.
- the intermediate layer 200 is a portion of the substrate 100 that is located around the first electrode 110, a portion that is located around the first terminal 112, and the extraction wiring 114. May be formed in a portion located around the wiring 116, a portion located around the wiring 116, a portion located around the second terminal 132, and a portion located around the lead-out wiring 134.
- FIGS. 1 to 5 are plan views showing the configuration of the light emitting device 10 according to the third embodiment.
- 11, 12, and 13 are cross-sectional views illustrating the configuration of the light emitting device 10. 9 to 13 correspond to FIGS. 1 to 5 in the embodiment.
- the light emitting device 10 according to the present embodiment is the same as the light emitting device 10 according to the first embodiment, except that the intermediate layer 200 is also provided on the surface of the substrate 100 where the light emitting unit 140 is formed. It is the composition. Therefore, the intermediate layer 200 is at least partly (all in the example shown in the figure) between the substrate 100 and the first electrode 110, at least partly (all in the example shown in the figure) between the substrate 100 and the wiring 116, At least a part (all in the example shown in the figure) between the insulating layer 150 located next to the first electrode 110 and the substrate 100, and at least a part between the insulating layer 150 located next to the wiring 116 and the substrate 100 ( All in the example shown in the figure), at least a part between the substrate 100 and the extraction wiring 114 (all in the example shown in the figure), and at least a part between the substrate 100 and the extraction wiring 134 (all in the example shown in the figure). ). Then, the refractive index n 4 of the intermediate layer 200 formed on the substrate 100 is
- the refractive index n 3 of the insulating layer 150 is between the refractive index n 2 of the first electrode 110 and the refractive index n 1 of the substrate 100, and the refractive index n 4 of the intermediate layer 200 is the first electrode 110.
- N 4 is preferably between ⁇ (n 1 ⁇ n 2 ) and (n 2 + n 3 ) / 2.
- the wavelength of the maximum peak of the emission spectrum of the organic layer 120 is ⁇ and the thickness of the intermediate layer 200 is d, 0.9 ⁇ / 4 ⁇ n 4 ⁇ d ⁇ 1.1 ⁇ / 4, and It is preferable that ⁇ (n 1 ⁇ n 2 ) ⁇ n 4 ⁇ (n 2 + n 3 ) / 2.
- the material of the intermediate layer 200 formed on the substrate 100 is the same as the material of the intermediate layer 200 shown in the first embodiment.
- the intermediate layer 200 formed on the substrate 100 may be different from the material of the intermediate layer 200 that covers the side surface of the first electrode 110.
- the thickness of the intermediate layer 200 formed on the substrate 100 is, for example, not less than 50 nm and not more than 500 nm.
- the intermediate layer 200 is formed between the first electrode 110 and the substrate 100.
- Refractive index n 4 of the intermediate layer 200 is located between the refractive index n 2 of the refractive index n 1 and the first electrode 110 of the substrate 100.
- the light extraction efficiency from the organic layer 120 is improved.
- n 4 is ⁇ (n 1 ⁇ n 2 )
- the light extraction efficiency from the organic layer 120 is further improved.
- n 4 is ⁇ (n 1 ⁇ n 2 )
- the light extraction efficiency from the organic layer 120 is Further improve.
- n 4 of the intermediate layer 200 is between the refractive index n 3 of the refractive index n 2 and the insulating layer 150 of the first electrode 110, a user, an insulating layer 150 of the side surface of the first electrode 110 It becomes difficult to see the contact part.
- n 4 is (n 2 + n 3 ) / 2
- the above-described portion of the side surface of the first electrode 110 is the least visible. Therefore, ⁇ (n 1 ⁇ n 2 ) ⁇ n 4 ⁇ (n 2 + n 3 ) / 2 has good light extraction efficiency from the organic layer 120 and is in contact with the insulating layer 150 among the side surfaces of the first electrode 110. It is a condition that makes it difficult to see the part.
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
前記基板に形成され、透光性を有し、屈折率がn2である第1電極と、
前記基板及び前記第1電極の上に形成され、前記第1電極と重なる開口を有していて屈折率がn3である絶縁層と、
前記開口内に位置する有機層と、
前記有機層の上に形成された透光性の第2電極と、
前記基板と前記第1電極の間の領域の少なくとも一部に形成されており、屈折率がn4である中間層と、
を備え、
n4は、n1とn2との間である発光装置である。
前記基板に形成され、透光性を有する第1電極と、
前記基板及び前記第1電極の上に形成され、前記第1電極と重なる開口を有している絶縁層と、
前記開口内に位置する有機層と、
前記有機層の上に形成された透光性の第2電極と、
前記基板と前記第1電極の間の領域の少なくとも一部に形成されている中間層と、
を備え、
前記中間層は、前記第1電極を構成する材料と前記絶縁層を構成する材料を含んでいる発光装置である。
前記基板に形成され、透光性を有する第1電極と、
前記基板及び前記第1電極の上に形成され、前記第1電極と重なる開口を有している絶縁層と、
前記開口内に位置する有機層と、
前記有機層の上に形成された透光性の第2電極と、
前記基板と前記第1電極の間の領域の少なくとも一部に形成されている中間層と、
を備え、
前記中間層は、シリコン、酸素、及び窒素を含んでいる発光装置である。
図6、図7、及び図8は、第2の実施形態に係る発光装置10の断面図であり、それぞれ第1の実施形態における図3、図4、及び図5に対応している。本実施形態に係る発光装置10は、中間層200のレイアウトを除いて、第1の実施形態に係る発光装置10と同様の構成を有している。
図9及び図10は、第3の実施形態に係る発光装置10の構成を示す平面図である。図11、図12、及び図13は、発光装置10の構成を示す断面図である。図9~図13は、実施形態における図1~図5に対応している。
Claims (15)
- 透光性を有しており、屈折率がn1である基板と、
前記基板に形成され、透光性を有し、屈折率がn2である第1電極と、
前記基板及び前記第1電極の上に形成され、前記第1電極と重なる開口を有していて屈折率がn3である絶縁層と、
前記開口内に位置する有機層と、
前記有機層の上に形成された透光性の第2電極と、
前記基板と前記第1電極の間の領域の少なくとも一部に形成されており、屈折率がn4である中間層と、
を備え、
n4は、n1とn2との間である発光装置。 - 請求項1に記載の発光装置において、
n3はn2とn1の間であり、
n4は、n2とn3の間である発光装置。 - 請求項2に記載の発光装置において、
n4は、√(n1×n2)2と(n2+n3)/2の間である発光装置。 - 請求項1~3のいずれか一項に記載の発光装置において、
前記有機層からの発光スペクトルの最大ピークの波長をλとして、前記中間層の厚さをdとしたとき、0.9λ/4≦n4×d≦1.1λ/4であり、
かつ、√(n1×n2)≦n4≦(n2+n3)/2である発光装置。 - 請求項1~4のいずれか一項に記載の発光装置において、
前記中間層は、前記基板と前記絶縁層の間に形成されている発光装置。 - 請求項1~5のいずれか一項に記載の発光装置において、
前記基板に形成され、前記第1電極または前記第2電極に電気的に接続している配線を備え、
前記配線は透光性を有しており、かつ少なくとも一部が前記絶縁層に覆われており、
前記中間層は、前記絶縁膜のうち前記配線の隣に位置する領域と前記基板の間に形成されている発光装置。 - 請求項6に記載の発光装置において、
前記中間層は、前記基板と前記配線の間に形成されている発光装置。 - 請求項1~7のいずれか一項に記載の発光装置において、
前記中間層は、前記第1電極を構成する材料と前記絶縁層を構成する材料を含んでいる発光装置。 - 請求項1~7のいずれか一項に記載の発光装置において、
前記中間層はシリコン、酸素、及び窒素を含んでいる発光装置。 - 請求項1~9のいずれか一項に記載の発光装置において、
前記第1電極はITO、IZO、Ag、又はAg合金を用いて形成されている発光装置。 - 請求項1~10のいずれか一項に記載の発光装置において、
前記第2電極はITO、IZO、Ag、又はAg合金を用いて形成されている発光装置。 - 請求項6又は7に記載の発光装置において、
前記配線はITO、IZO、Ag、又はAg合金を用いて形成されている発光装置。 - 透光性を有する基板と、
前記基板に形成され、透光性を有する第1電極と、
前記基板及び前記第1電極の上に形成され、前記第1電極と重なる開口を有している絶縁層と、
前記開口内に位置する有機層と、
前記有機層の上に形成された透光性の第2電極と、
前記基板と前記第1電極の間の領域の少なくとも一部に形成されている中間層と、
を備え、
前記中間層は、前記第1電極を構成する材料と前記絶縁層を構成する材料を含んでいる発光装置。 - 透光性を有する基板と、
前記基板に形成され、透光性を有する第1電極と、
前記基板及び前記第1電極の上に形成され、前記第1電極と重なる開口を有している絶縁層と、
前記開口内に位置する有機層と、
前記有機層の上に形成された透光性の第2電極と、
前記基板と前記第1電極の間の領域の少なくとも一部に形成されている中間層と、
を備え、
前記中間層は、シリコン、酸素、及び窒素を含んでいる発光装置。 - 請求項13又は14に記載の発光装置において、
前記中間層の厚さは50nm以上である発光装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017507263A JP6484702B2 (ja) | 2015-03-25 | 2015-03-25 | 発光装置 |
PCT/JP2015/059240 WO2016151820A1 (ja) | 2015-03-25 | 2015-03-25 | 発光装置 |
US15/560,967 US10186687B2 (en) | 2015-03-25 | 2015-03-25 | Light-emitting device having an intermediate layer |
US16/221,352 US10553828B2 (en) | 2015-03-25 | 2018-12-14 | Light-emitting device having an intermediate layer located over a lateral side of the first electrode |
US16/730,781 US10971703B2 (en) | 2015-03-25 | 2019-12-30 | Light-emitting device having intermediate layer located over interconnect |
US17/201,287 US11552277B2 (en) | 2015-03-25 | 2021-03-15 | Light-emitting device including a light-transmitting interconnect located over a substrate |
US18/083,118 US11943964B2 (en) | 2015-03-25 | 2022-12-16 | Light-emitting device including a light-transmitting interconnect located over a substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2015/059240 WO2016151820A1 (ja) | 2015-03-25 | 2015-03-25 | 発光装置 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/560,967 A-371-Of-International US10186687B2 (en) | 2015-03-25 | 2015-03-25 | Light-emitting device having an intermediate layer |
US16/221,352 Continuation US10553828B2 (en) | 2015-03-25 | 2018-12-14 | Light-emitting device having an intermediate layer located over a lateral side of the first electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016151820A1 true WO2016151820A1 (ja) | 2016-09-29 |
Family
ID=56978110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/059240 WO2016151820A1 (ja) | 2015-03-25 | 2015-03-25 | 発光装置 |
Country Status (3)
Country | Link |
---|---|
US (5) | US10186687B2 (ja) |
JP (1) | JP6484702B2 (ja) |
WO (1) | WO2016151820A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016151820A1 (ja) | 2015-03-25 | 2016-09-29 | パイオニア株式会社 | 発光装置 |
JP7288536B2 (ja) * | 2020-11-18 | 2023-06-07 | パイオニア株式会社 | 発光装置 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002270377A (ja) * | 2001-03-08 | 2002-09-20 | Seiko Epson Corp | 発光パネル及び電子機器 |
JP2005183048A (ja) * | 2003-12-16 | 2005-07-07 | Nec Corp | 発光素子基板およびそれを用いた発光素子 |
JP2008016347A (ja) * | 2006-07-06 | 2008-01-24 | Toppan Printing Co Ltd | 有機エレクトロルミネッセンス素子 |
JP2009110930A (ja) * | 2007-08-21 | 2009-05-21 | Fujifilm Corp | 散乱部材、及びこれを用いた有機エレクトロルミネッセンス表示装置 |
JP2009181856A (ja) * | 2008-01-31 | 2009-08-13 | Sumitomo Chemical Co Ltd | 透明導電膜付き透明板および有機エレクトロルミネッセンス素子 |
JP2011096680A (ja) * | 2011-02-15 | 2011-05-12 | Semiconductor Energy Lab Co Ltd | 発光装置及び発光装置の作製方法 |
WO2011111670A1 (ja) * | 2010-03-08 | 2011-09-15 | パナソニック電工株式会社 | 有機エレクトロルミネッセンス素子 |
JP2014198423A (ja) * | 2013-03-29 | 2014-10-23 | 株式会社カネカ | 透明電極付き基板 |
JP2014225329A (ja) * | 2011-09-12 | 2014-12-04 | シャープ株式会社 | 発光デバイス、表示装置、及び照明装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101393967A (zh) * | 2000-08-23 | 2009-03-25 | 出光兴产株式会社 | 有机场致发光显示装置 |
US7274044B2 (en) | 2004-01-26 | 2007-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP2005242338A (ja) | 2004-01-26 | 2005-09-08 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2005276620A (ja) | 2004-03-25 | 2005-10-06 | Semiconductor Energy Lab Co Ltd | 発光装置、電子機器及びテレビ受像器 |
WO2005112513A1 (ja) * | 2004-05-17 | 2005-11-24 | Zeon Corporation | エレクトロルミネッセンス素子、照明装置、および表示装置 |
EP1830421A3 (en) * | 2006-03-03 | 2012-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, manufacturing method of light emitting device, and sheet-like sealing material |
KR20090019752A (ko) | 2007-08-21 | 2009-02-25 | 후지필름 가부시키가이샤 | 산란 부재 및 그것을 사용하는 유기 일렉트로루미네선스 표시 장치 |
WO2016151820A1 (ja) * | 2015-03-25 | 2016-09-29 | パイオニア株式会社 | 発光装置 |
-
2015
- 2015-03-25 WO PCT/JP2015/059240 patent/WO2016151820A1/ja active Application Filing
- 2015-03-25 JP JP2017507263A patent/JP6484702B2/ja active Active
- 2015-03-25 US US15/560,967 patent/US10186687B2/en active Active
-
2018
- 2018-12-14 US US16/221,352 patent/US10553828B2/en active Active
-
2019
- 2019-12-30 US US16/730,781 patent/US10971703B2/en active Active
-
2021
- 2021-03-15 US US17/201,287 patent/US11552277B2/en active Active
-
2022
- 2022-12-16 US US18/083,118 patent/US11943964B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002270377A (ja) * | 2001-03-08 | 2002-09-20 | Seiko Epson Corp | 発光パネル及び電子機器 |
JP2005183048A (ja) * | 2003-12-16 | 2005-07-07 | Nec Corp | 発光素子基板およびそれを用いた発光素子 |
JP2008016347A (ja) * | 2006-07-06 | 2008-01-24 | Toppan Printing Co Ltd | 有機エレクトロルミネッセンス素子 |
JP2009110930A (ja) * | 2007-08-21 | 2009-05-21 | Fujifilm Corp | 散乱部材、及びこれを用いた有機エレクトロルミネッセンス表示装置 |
JP2009181856A (ja) * | 2008-01-31 | 2009-08-13 | Sumitomo Chemical Co Ltd | 透明導電膜付き透明板および有機エレクトロルミネッセンス素子 |
WO2011111670A1 (ja) * | 2010-03-08 | 2011-09-15 | パナソニック電工株式会社 | 有機エレクトロルミネッセンス素子 |
JP2011096680A (ja) * | 2011-02-15 | 2011-05-12 | Semiconductor Energy Lab Co Ltd | 発光装置及び発光装置の作製方法 |
JP2014225329A (ja) * | 2011-09-12 | 2014-12-04 | シャープ株式会社 | 発光デバイス、表示装置、及び照明装置 |
JP2014198423A (ja) * | 2013-03-29 | 2014-10-23 | 株式会社カネカ | 透明電極付き基板 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2016151820A1 (ja) | 2017-11-30 |
US20210226171A1 (en) | 2021-07-22 |
US20190131582A1 (en) | 2019-05-02 |
US11943964B2 (en) | 2024-03-26 |
US10971703B2 (en) | 2021-04-06 |
US20230121632A1 (en) | 2023-04-20 |
US10553828B2 (en) | 2020-02-04 |
US11552277B2 (en) | 2023-01-10 |
JP6484702B2 (ja) | 2019-03-13 |
US20180047942A1 (en) | 2018-02-15 |
US20200144551A1 (en) | 2020-05-07 |
US10186687B2 (en) | 2019-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11943964B2 (en) | Light-emitting device including a light-transmitting interconnect located over a substrate | |
JP6404361B2 (ja) | 発光装置 | |
JP6555911B2 (ja) | 発光装置 | |
JP7288536B2 (ja) | 発光装置 | |
JP6725732B2 (ja) | 発光装置 | |
WO2016151819A1 (ja) | 発光装置 | |
JP6661373B2 (ja) | 発光装置 | |
JP2016119201A (ja) | 発光装置 | |
JP2021015813A (ja) | 発光装置 | |
WO2017163331A1 (ja) | 発光装置、電子装置および発光装置の製造方法 | |
JP2019071305A (ja) | 発光装置 | |
JP6580336B2 (ja) | 発光装置 | |
JP6700309B2 (ja) | 発光装置 | |
JP6700013B2 (ja) | 発光装置 | |
JP6499876B2 (ja) | 発光装置 | |
WO2016129114A1 (ja) | 発光装置及び発光装置の製造方法 | |
JP2022164806A (ja) | 発光装置 | |
JP2019192662A (ja) | 発光装置 | |
JP2019201004A (ja) | 発光装置 | |
WO2017094087A1 (ja) | 発光装置 | |
WO2017183118A1 (ja) | 発光装置 | |
JP2016149318A (ja) | 発光装置 | |
JP2016134328A (ja) | 発光装置 | |
JP2017123239A (ja) | 発光装置 | |
JP2016149226A (ja) | 発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15886373 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2017507263 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15560967 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 15886373 Country of ref document: EP Kind code of ref document: A1 |