WO2016132694A1 - Procédé de production de dispositifs à semi-conducteurs - Google Patents

Procédé de production de dispositifs à semi-conducteurs Download PDF

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Publication number
WO2016132694A1
WO2016132694A1 PCT/JP2016/000553 JP2016000553W WO2016132694A1 WO 2016132694 A1 WO2016132694 A1 WO 2016132694A1 JP 2016000553 W JP2016000553 W JP 2016000553W WO 2016132694 A1 WO2016132694 A1 WO 2016132694A1
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Prior art keywords
substrate
hydrogen gas
hermetic chamber
generated
insulating film
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PCT/JP2016/000553
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English (en)
Japanese (ja)
Inventor
早川　裕
久則 与倉
Original Assignee
株式会社デンソー
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Filing date
Publication date
Priority claimed from JP2015242400A external-priority patent/JP6341190B2/ja
Application filed by 株式会社デンソー filed Critical 株式会社デンソー
Priority to CN201680006742.2A priority Critical patent/CN107209078B/zh
Priority to US15/528,124 priority patent/US9944515B2/en
Publication of WO2016132694A1 publication Critical patent/WO2016132694A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5783—Mountings or housings not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Definitions

  • the present disclosure relates to a method for manufacturing a semiconductor device in which a first substrate and a second substrate are joined so that an airtight chamber is formed between the first substrate and the second substrate.
  • the following has been proposed as a semiconductor device in which an airtight chamber is configured between a first substrate and a second substrate (see, for example, Patent Document 1). That is, in this semiconductor device, a sensing unit that detects angular velocity is formed on the first substrate. In addition, the second substrate has a recess formed in a portion of one surface of the first substrate facing the sensing unit. And this 2nd board
  • the hermetic chamber is at a vacuum pressure.
  • Such a semiconductor device is manufactured as follows. That is, first, a sensing unit that detects angular velocity is formed on the first substrate, and a recess is formed on the second substrate. And it manufactures by joining a 1st board
  • OH groups are formed on the bonding surfaces of the first substrate and the second substrate, and the bonding strength is improved by covalently bonding the OH groups on each bonding surface. It has been known. However, in such a bonding method, although the bonding strength between the first substrate and the second substrate can be improved, hydrogen gas (that is, degas) is generated in the hermetic chamber by the OH group, and the pressure of the hermetic chamber is generated by the hydrogen gas. Is higher than the desired pressure.
  • hydrogen gas that is, degas
  • the hydrogen gas is diffused (ie, passed through the first substrate or the second substrate) by increasing the diffusion distance (ie, diffusion coefficient) of the hydrogen gas in the hermetic chamber by performing heat treatment. ) To be discharged outside.
  • this heating step is simply performed, the pressure in the hermetic chamber may not be a desired pressure. That is, the pressure in the hermetic chamber may fluctuate.
  • the airtight chamber is formed by joining the first substrate and the second substrate, and the airtight chamber is used as a reference pressure. The same occurs in a pressure sensor or the like serving as a chamber.
  • An object of the present disclosure is to provide a method for manufacturing a semiconductor device capable of suppressing fluctuations in pressure in an airtight chamber.
  • a first substrate having one surface, one surface and the other surface opposite to the one surface, a recess is formed on the one surface side, and the one surface faces one surface of the first substrate.
  • a second substrate bonded to the first substrate in a state, and a hermetic chamber is formed including a space between the first substrate and the recess of the second substrate, and the hermetic chamber is vacuumed
  • the first substrate containing silicon is prepared, and the second substrate containing silicon is prepared by forming the depression on the one surface of the second substrate.
  • OH groups generated on the one surface of the first substrate and OH groups generated on the one surface of the second substrate are covalently bonded.
  • the heat treatment by heating at a temperature rising rate of 1 ° C./sec or less so that the portion where the OH group is generated in the first substrate and the second substrate is 700 ° C. or more.
  • an OH group is generated on the first substrate and the second substrate, the first substrate and the second substrate are joined, and then the hermetic chamber is heated at a rate of 1 ° C./sec or less. Is heated so that the wall surface constituting the temperature becomes 700 ° C. or higher. Thereby, all the OH groups remaining in the hermetic chamber can be converted into hydrogen gas. Since the heating temperature and the heating time are adjusted so that the diffusion distance of the hydrogen gas is equal to or greater than the distance between the bottom surface of the recess in the second substrate and the other surface of the second substrate, the hydrogen gas is removed. It can be discharged from a closed room. For this reason, the pressure in an airtight chamber can be made into a desired pressure, and it can suppress that the pressure in an airtight chamber fluctuates.
  • FIG. 1 is a cross-sectional view of a pressure sensor according to a first embodiment of the present disclosure.
  • 2 (a) to 2 (d) are cross-sectional views showing the manufacturing process of the pressure sensor shown in FIG.
  • FIG. 3A to FIG. 3C are cross-sectional views showing the manufacturing process of the pressure sensor following FIG.
  • FIG. 4 is a diagram showing the relationship between the amount of hydrogen gas generated and the sample surface temperature.
  • FIG. 5 is a diagram showing the relationship between the heating temperature and the pressure in the hermetic chamber
  • FIG. 6 is a cross-sectional view of a pressure sensor according to a second embodiment of the present disclosure.
  • FIG. 1 is a cross-sectional view of a pressure sensor according to a first embodiment of the present disclosure.
  • 2 (a) to 2 (d) are cross-sectional views showing the manufacturing process of the pressure sensor shown in FIG.
  • FIG. 3A to FIG. 3C are cross-sectional views showing the manufacturing process of the pressure sensor following FIG.
  • FIG. 4
  • FIG. 7 is a cross-sectional view of a pressure sensor according to another embodiment of the present disclosure
  • FIG. 8 is a cross-sectional view of a pressure sensor according to another embodiment of the present disclosure
  • FIG. 9 is a cross-sectional view of a pressure sensor according to another embodiment of the present disclosure.
  • the pressure sensor includes a first substrate 10 having one surface 10a and another surface 10b.
  • the first substrate 10 is configured by an SOI (Silicon on Insulator) substrate in which a support substrate 11, an insulating film 12, and a semiconductor layer 13 are sequentially stacked. Then, one surface 10a of the first substrate 10 is formed on one surface of the semiconductor layer 13 opposite to the insulating film 12 side, and the first substrate is formed on one surface of the support substrate 11 opposite to the insulating film 12 side.
  • the other surface 10b of 10 is comprised.
  • the support substrate 11 and the semiconductor layer 13 are made of a silicon substrate or the like, and the insulating film 12 is made of SiO 2 or SiN.
  • the diaphragm part 15 is comprised in the 1st board
  • the recess 14 is formed so as to reach the insulating film 12 from the other surface 10 b of the first substrate 10.
  • the diaphragm portion 15 is configured by the insulating film 12 and the semiconductor layer 13 located between the bottom surface of the recess 14 and the one surface 10 a of the first substrate 10.
  • each gauge resistor 16 is appropriately connected by a connection wiring layer (not shown) so as to form a bridge circuit.
  • the gauge resistor 16 is a diffusion layer configured by heat treatment after impurities are ion-implanted.
  • the surface concentration of impurities constituting the gauge resistor 16 is set to 1.0 ⁇ 10 ⁇ 18 to 1.0 ⁇ 10 ⁇ 21 cm ⁇ 3, and the gauge resistor 16 is diffused according to the present disclosure.
  • a lead wiring layer or the like that is connected to the first substrate 10 as appropriate with each gauge resistor 16 and connected to an external circuit through a through electrode (not shown) formed on the second substrate 20. Is also formed.
  • the second substrate 20 is disposed on the one surface 10a of the first substrate 10 as described above.
  • the second substrate 20 includes a bonded substrate 21 and an insulating film 22 formed on the one surface 21 a side facing the first substrate 10 of the bonded substrate 21.
  • 20a is constituted by one surface of the insulating film 22 opposite to the bonded substrate 21 side.
  • the bonded substrate 21 is made of a silicon substrate or the like, and the insulating film 22 is made of SiO 2 or SiN.
  • the other surface 20 b of the second substrate 20 is configured by the other surface 21 b on the opposite side to the one surface 21 a of the bonded substrate 21.
  • a recess 21c is formed at a portion facing the gauge resistor 16, and the insulating film 22 is also formed on the wall surface of the recess 21c.
  • a recess 20 c formed by the insulating film 22 formed on the wall surface of the recess 21 c is formed in a portion facing the gauge resistor 16.
  • the recess 20c has a regular octagonal planar shape, and the length of the diagonal line passing through the center is 350 ⁇ m.
  • the recess 20c is configured such that the distance between the bottom surface of the recess 20c and the other surface 20b of the second substrate 20 is 10 to 200 ⁇ m.
  • the second substrate 20 has one surface 20a (that is, the insulating film 22) joined to one surface 10a (that is, the semiconductor layer 13) of the first substrate 10.
  • the hermetic chamber 30 is formed between the first substrate 10 and the second substrate 20 by the recess 20 c, and the gauge resistor 16 is sealed in the hermetic chamber 30.
  • the airtight chamber 30 since a predetermined pressure is applied from the airtight chamber 30 to the one surface 10a side of the diaphragm portion 15, the airtight chamber 30 functions as a reference pressure chamber.
  • the first substrate 10 and the second substrate 20 are so-called direct bonding that activates and bonds the bonding surfaces of the first substrate 10 and the second substrate 20 as will be described later. It is joined.
  • the second substrate 20 is formed with a through-hole that penetrates in the stacking direction of the first substrate 10 and the second substrate 20 and exposes the lead wiring layer formed in the first substrate 10.
  • a through electrode is formed so as to be appropriately electrically connected to the lead wiring layer and to be connected to an external circuit.
  • a first substrate 10 in which a support substrate 11, an insulating film 12, and a semiconductor layer 13 are sequentially laminated is prepared. Then, after forming a mask (not shown) on one surface 10a, an impurity is ion-implanted and heat treatment is performed to thermally diffuse the impurity, thereby appropriately forming a gauge resistor 16, a connection wiring layer (not shown), a lead-out wiring layer, and the like. Note that the heat treatment in this step is performed, for example, by heat-treating the first substrate 10 at 800 to 1100 ° C. so that impurities are thermally diffused.
  • a bonded substrate 21 is prepared as shown in FIG. 2B, and a recess 21c is formed on one surface 21a of the bonded substrate 21 by dry etching or the like.
  • the insulating film 22 is formed on the one surface 21a of the substrate 21 by a chemical vapor deposition (ie, chemical vapor deposition (CVD)) method or the like.
  • CVD chemical vapor deposition
  • the first substrate 10 semiconductor layer 13
  • the second substrate 20 insulating film 22
  • OH groups are generated on the one surface 10 a side of the first substrate 10 and the one surface 20 a side of the second substrate 20.
  • the first substrate 10 and the second substrate 20 are disposed in a chamber (not shown), and the one surface 10a (that is, the semiconductor layer 13) side of the first substrate 10 and the one surface 20a (that is, insulating) of the second substrate 20 are disposed.
  • Irradiation with O 2 plasma, N 2 plasma, Ar ion beam or the like is performed from the film 22) side to remove impurities adhering to the bonding surface and to activate each bonding surface.
  • the activation of the bonding surface means that a part of the bond in the atom exposed on the bonding surface has lost the bonding partner. Further, when the bonding surface is activated, O 2 plasma or the like is irradiated from the one surface 10a side of the first substrate 10 and the one surface 20a side of the second substrate 20, so that the second substrate on the one surface 10a of the first substrate 10 is activated. The region on the inner edge side of the region bonded to 20, the wall surface of the recess 20 c of the second substrate 20, and the like are also activated.
  • OH groups are generated on the one surface 10 a side of the first substrate 10 and the one surface 20 a side of the second substrate 20.
  • the OH group is generated in the activated region of the first substrate 10 and the second substrate 20, the region closer to the inner edge than the region bonded to the second substrate 20 on the one surface 10 a of the first substrate 10. , And on the wall surface of the recess 20c of the second substrate 20 and the like. Further, when generating OH groups on the surfaces 10a and 20a of the first substrate 10 and the second substrate 20, instead of taking out the first substrate 10 and the second substrate 20 from the chamber, for example, in the chamber OH groups may be generated on the first substrate 10 and the second substrate 20 by introducing the atmosphere.
  • alignment is performed by an infrared microscope or the like using alignment marks or the like appropriately provided on the first substrate 10 and the second substrate 20, and at a low temperature of room temperature to 550 ° C.
  • the first substrate 10 and the second substrate 20 are bonded by so-called direct bonding.
  • the first substrate 10 and the second substrate 20 are directly bonded by applying a weight of 18 kN in the stacking direction of the first substrate 10 and the second substrate 20 while maintaining the temperature at 300 ° C.
  • the hermetic chamber 30 is formed including the space between the first substrate 10 and the recessed portion 20 c of the second substrate 20, and the gauge resistor 16 is sealed in the hermetic chamber 30.
  • hydrogen gas 31 is generated by the covalent bonding of OH groups generated on one surface 10a of the first substrate 10 and one surface 20a of the second substrate 20. To do.
  • the process up to the process of FIG. 2D is introduced into an annealing apparatus (not shown) and heat-treated.
  • the OH group that has not contributed to the bonding between the first substrate 10 and the second substrate 20, that is, the region on the inner edge side of the region bonded to the second substrate 20 on the one surface 10 a of the first substrate 10 is generated.
  • the OH groups and the OH groups generated on the wall surface of the recess 20c of the second substrate 20 are bonded to each other to generate water molecules.
  • FIG. 4 shows experimental results obtained by performing a thermal desorption spectroscopy (TDS) method after generating OH groups by irradiating O 2 plasma, and the rate of temperature increase. Is 1 ° C./sec.
  • the sample surface temperature in FIG. 4 is the surface temperature at which OH groups are generated, and the background indicated by the broken line in FIG. 4 is noise specific to the apparatus used in the experiment.
  • the temperature at which hydrogen gas is not generated shifts to a low temperature side when the temperature rising rate is lower than 1 ° C./sec, and hydrogen gas is not generated when the temperature rising rate is higher than 1 ° C./sec. It is known that the temperature shifts to the high temperature side. Further, as shown in FIG. 4, when the plasma humidity is changed, the present inventors change the maximum amount of hydrogen gas generated and the temperature at the maximum amount, but the temperature at which hydrogen gas is not generated. Also found no change.
  • the heating rate is set to 1 ° C./sec or less, and heating is performed so that the surface on which the OH group is generated is 700 ° C. or more. That is, the heating is performed so that the one surface 10a of the first substrate 10, the one surface 20a of the second substrate 20, and the wall surface of the recess 20c are 700 ° C. or higher.
  • FIG.3 (b) has shown the state before the surface in which the OH group was produced
  • OH groups generated on the bonding surfaces of the first substrate 10 and the second substrate 20 react as shown in the above reaction formula [F1]. May remain.
  • the bonding surface of the first substrate 10 and the second substrate 20 is heated so as to be 700 ° C. or higher, so that no reaction occurs in the process of FIG. In the case where an OH group is present, the OH group can be converted into hydrogen gas 31.
  • a gas that maintains the heating temperature that is, a temperature of 700 ° C. or higher
  • a blanking process is performed.
  • the diffusion distance of the hydrogen gas 31 is proportional to the diffusion coefficient (D) and the heating time (t) (that is, 2 (Dt) 1/2 ), and the diffusion coefficient (D) is proportional to the heating temperature. To do. That is, the diffusion distance of the hydrogen gas 31 is proportional to the heating time and the heating temperature.
  • the inventors diffuse (i.e., pass through) the portion that becomes the shortest distance between the wall surface that forms the hermetic chamber 30 and the wall surface that is exposed to the outside air, and discharge the hydrogen gas 31.
  • Experiments were conducted by adjusting the heating temperature and the heating time so that the diffusion distance of the hydrogen gas 31 was a distance equal to or longer than the shortest distance and the diffusion distance was constant, and the experimental results shown in FIG. 5 were obtained.
  • the shortest distance between the wall surface constituting the hermetic chamber 30 and the wall surface exposed to the outside air is the portion between the bottom surface of the recess 20c and the other surface 20b of the second substrate 20. Become.
  • the volume in the hermetic chamber 30 is 1.0 ⁇ 10 ⁇ 3 mm ⁇ 3 and the distance between the bottom surface of the recess 20c and the other surface 20b of the second substrate 20 is 10 to 200 ⁇ m. It is a figure at the time of temperature rising rate being 1 degree-C / sec.
  • a distance equal to or greater than the distance between the bottom surface of the recess 20c and the other surface 20b of the second substrate 20 is defined as a diffusion distance, and the diffusion distance is proportional to D 1/2 and t 1/2 . Therefore, even when the heating temperature (that is, the diffusion coefficient) and the heating time are adjusted so that the diffusion distance is constant, for example, when the heating temperature is 600 ° C., the pressure in the hermetic chamber 30 is sufficiently increased. It was found that the pressure could not be reduced. That is, it was found that when the heating temperature is 600 ° C., the hydrogen gas 31 in the hermetic chamber 30 cannot be sufficiently discharged.
  • D is a diffusion coefficient
  • t is a heating time.
  • the heating temperature is 600 ° C.
  • the diffusion time of the hydrogen gas 31 is set to the bottom surface of the recess 20 c and the other surface of the second substrate 20 by setting the heating time to a long time of 75 hours. It is set as more than the distance between 20b.
  • the hermetic chamber 30 is adjusted by adjusting the heating temperature and the heating time so that the diffusion distance is equal to or greater than the distance between the bottom surface of the recess 20c and the other surface 20b of the second substrate 20.
  • the hydrogen gas 31 generated inside can be discharged from the hermetic chamber 30, and the pressure in the hermetic chamber 30 can be set to a desired pressure.
  • the shortest distance between the wall surface configuring the airtight chamber 30 and the wall surface exposed to the outside air is the bottom surface of the recess 20c and the other surface 20b of the second substrate 20.
  • FIG. 3C shows a state in which the hydrogen gas 31 is discharged through a portion between the bottom surface of the recess 20c and the other surface 20b of the second substrate 20.
  • hydrogen gas 31 is discharged by diffusing a portion between one surface 10a and the other surface 10b of the first substrate 10.
  • the heating step is preferably performed at less than 1412 ° C.
  • the diffusion distance of the hydrogen gas 31 is proportional to the heating temperature and the heating time. For this reason, for example, after heating the surface on which OH groups are generated in the step of FIG. 3B to be 700 ° C. or higher, the temperature is lowered to 600 ° C. in the step of FIG. By increasing the length, the diffusion distance may be greater than or equal to the distance between the bottom surface of the recess 20c and the other surface 20b of the second substrate 20.
  • the pressure sensor shown in FIG. 1 is manufactured by forming a mask on the other surface 10b of the first substrate 10 and forming the concave portion 14 by dry etching or the like to form the diaphragm portion 15.
  • OH groups are generated on the one surface 10a side of the first substrate 10 and the one surface 20a side of the second substrate 20, and the first substrate 10 and the second substrate 20 are bonded. . And it heats so that the temperature increase rate shall be 1 degrees C / sec or less, and the surface in which the OH group is produced
  • the heating temperature and the heating time are adjusted so that the diffusion distance of the hydrogen gas 31 is equal to or greater than the distance between the bottom surface of the recess 20c and the other surface 20b of the second substrate 20.
  • the hydrogen gas 31 in the hermetic chamber 30 can be sufficiently discharged, and the inside of the hermetic chamber 30 can be sufficiently decompressed (that is, a vacuum state). That is, it can suppress that the pressure in the airtight chamber 30 fluctuates.
  • the first substrate 10 is configured to have a thin insulating film 17 on the semiconductor layer 13. That is, the first substrate 10 is configured by laminating the support substrate 11, the insulating film 12, the semiconductor layer 13, and the thin insulating film 17 in this order, and one surface 10 a of the thin insulating film 17 on the side opposite to the semiconductor layer 13 side. It consists of one side.
  • the diaphragm portion 15 includes an insulating film 12, a semiconductor layer 13, and a thin insulating film 17 positioned between the bottom surface of the recess 14 and the one surface 10 a of the first substrate 10.
  • Such a pressure sensor is manufactured as follows. That is, first, in the process of FIG. 2A, after forming the gauge resistor 16 and the like, the first substrate 10 is configured by forming the thin insulating film 17 on the semiconductor layer 13 by, for example, thermal oxidation. . Thereafter, the steps after FIG. 2B are performed, and when the heating step after FIG. 3A is performed, the heat treatment is performed in a state where the thin insulating film 17 is formed on the semiconductor layer 13, The pressure sensor is manufactured.
  • the degassing process is performed with the thin insulating film 17 formed on the semiconductor layer 13.
  • the thin insulating film 17 can suppress the outward diffusion (out diffusion) in which the impurities constituting the gauge resistor 16 diffuse into the hermetic chamber 30, and the characteristics of the gauge resistor 16 change. Can be suppressed.
  • the bonding strength may be lowered if the thin insulating film 17 is thick. For this reason, it is preferable to form the thin insulating film 17 to be about 10 nm or less.
  • the present disclosure can be applied to manufacturing methods of various semiconductor devices that include the hermetic chamber 30 and the pressure of the hermetic chamber 30 is in a vacuum state, and can also be applied to manufacturing methods of angular velocity sensors and the like. it can.
  • the present disclosure may be applied to a method for manufacturing a pressure sensor in which the second substrate 20 includes only the bonded substrate 21.
  • the recessed portion 20c of the second substrate 20 is configured by the recessed portion 21c of the bonded substrate 21, and the portion located between the bottom surface of the recessed portion 20c and the other surface 20b of the second substrate 20 is Only the bonded substrate 21 is provided.
  • the insulating film 22 may not be formed on the wall surface of the recess 21c.
  • the first substrate 10 is composed only of the support substrate 11, and the bonded substrate 21 and the insulation positioned between the bottom surface of the recess 20 c and the other surface 20 b of the second substrate 20.
  • the present disclosure may be applied to a method of manufacturing a pressure sensor in which the membrane 22 is the diaphragm portion 15 and the gauge resistor 16 is formed on the diaphragm portion 15.
  • the manufacturing of the pressure sensor in which the first substrate 10 is configured by the support substrate 11 and the insulating film 12, and the second substrate 20 is configured only by the bonded substrate 21.
  • the present disclosure may be applied to a method.
  • the recessed portion 20 c of the second substrate 20 is configured by the recessed portion 21 c of the bonded substrate 21, and the bottom surface of the recessed portion 20 c and the second substrate 20 The portion located between the surface 20 b is only the bonded substrate 21.
  • the diaphragm portion 15 may be composed of only the semiconductor layer 13. That is, the insulating film 12 may be removed by the recess 14. Similarly, in the second embodiment, the diaphragm portion 15 may be composed of the semiconductor layer 13 and the thin insulating film 17.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne un procédé de production de dispositif à semi-conducteur dans lequel une chambre étanche à l'air (30) est formée entre un premier substrat (10) et une partie en retrait (20c) d'un second substrat (20), ledit procédé comprenant : la préparation du premier substrat et du second substrat, qui comprennent du silicium ; l'assemblage des premier et second substrats ; le traitement thermique pour déverser de l'hydrogène gazeux (31) à l'intérieur de la chambre étanche à l'air ; et la génération, avant la jonction, de groupes OH sur la surface de la paroi de la partie en retrait des premier et second substrats. Dans l'assemblage, les groupes OH des premier et second substrats sont liés de façon covalente. Dans le traitement thermique, à une vitesse de montée en température inférieure ou égale à 1 °C/s, les parties des premier et second substrats où les groupes OH sont générés sont chauffées de manière à égaler ou dépasser 700 °C, de l'hydrogène gazeux est généré, la température de chauffage et le temps de chauffage sont ajustés de sorte que la longueur de diffusion du gaz hydrogène soit supérieure ou égale à la distance minimale entre la surface de la paroi de la chambre étanche à l'air et l'air extérieur, et l'hydrogène gazeux est évacué de la chambre étanche à l'air.
PCT/JP2016/000553 2015-02-16 2016-02-03 Procédé de production de dispositifs à semi-conducteurs WO2016132694A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201680006742.2A CN107209078B (zh) 2015-02-16 2016-02-03 半导体装置的制造方法
US15/528,124 US9944515B2 (en) 2015-02-16 2016-02-03 Manufacturing method of semiconductor device

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JP2015027738 2015-02-16
JP2015-027738 2015-02-16
JP2015242400A JP6341190B2 (ja) 2015-02-16 2015-12-11 半導体装置の製造方法
JP2015-242400 2015-12-11

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07104217B2 (ja) * 1988-05-27 1995-11-13 横河電機株式会社 振動式トランスデューサとその製造方法
JP4161432B2 (ja) * 1998-10-28 2008-10-08 株式会社デンソー 半導体圧力センサおよびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07104217B2 (ja) * 1988-05-27 1995-11-13 横河電機株式会社 振動式トランスデューサとその製造方法
JP4161432B2 (ja) * 1998-10-28 2008-10-08 株式会社デンソー 半導体圧力センサおよびその製造方法

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