WO2016129323A1 - Module laser et appareil d'usinage laser - Google Patents

Module laser et appareil d'usinage laser Download PDF

Info

Publication number
WO2016129323A1
WO2016129323A1 PCT/JP2016/050990 JP2016050990W WO2016129323A1 WO 2016129323 A1 WO2016129323 A1 WO 2016129323A1 JP 2016050990 W JP2016050990 W JP 2016050990W WO 2016129323 A1 WO2016129323 A1 WO 2016129323A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser
light
light beam
optical system
laser elements
Prior art date
Application number
PCT/JP2016/050990
Other languages
English (en)
Japanese (ja)
Inventor
野田　進
正人 河▲崎▼
一樹 久場
山本　達也
西前　順一
小島　哲夫
Original Assignee
三菱電機株式会社
野田　進
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社, 野田　進 filed Critical 三菱電機株式会社
Publication of WO2016129323A1 publication Critical patent/WO2016129323A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers

Definitions

  • the present invention relates to a laser module and a laser processing apparatus including the laser module.
  • a conventional laser module includes a plurality of laser elements (semiconductor laser elements) as light sources, a number of collimating lenses (or lens arrays) corresponding to the number of laser elements, and a condensing lens.
  • the emitted light beam is collimated by a collimator lens, condensed by a condenser lens, and coupled to an optical fiber.
  • a vertical cavity surface emitting laser (VCSEL) element is used as a laser element, and a light beam emitted from the laser element is collimated by a microlens array and collected. It is disclosed that light is collected using an optical lens.
  • VCSEL vertical cavity surface emitting laser
  • a VCSEL element is used as in Non-Patent Document 1, and a plurality of lenses having the functions of a collimating lens and a condensing lens are used.
  • a microlens array integrated as a plurality of lenses the number of laser elements can be increased and a high output beam can be obtained.
  • Non-Patent Document 2 discloses a surface-emitting semiconductor laser element (photonic crystal surface-emitting laser element: PCSEL element) in which a periodic structure (photonic crystal structure) of the same order as the wavelength of light is provided in the vicinity of an active layer. It is disclosed.
  • PCSEL element photonic crystal surface-emitting laser element
  • the condensing property of the light beams after the fiber coupling is such that the parallel beams are in contact with each other.
  • the beam size (light emitting area) in the vicinity of the light emitting surface is generally small, thereby increasing the divergence angle of the emitted light beam. Therefore, immediately after the light beams are emitted, the adjacent light beams overlap each other, and the condensing property of the light beams after the fiber coupling is lowered.
  • This problem can be solved by increasing the arrangement interval of the laser elements or by moving the collimating lens away from the laser elements.
  • the module is increased in the direction orthogonal to the optical axis.
  • the collimating lens is moved away from the laser element, the module becomes large not only in the optical axis direction but also in the direction orthogonal to the optical axis due to the large divergence angle of the light beam. Therefore, in order to produce parallel beams in contact with each other, it is necessary to sufficiently shorten the installation position and focal length of the collimating lens.
  • the focal length of the collimating lens is shortened, the influence of the positional displacement of the collimating lens on the deviation of the light beam emission direction increases, and fine adjustment is required in the alignment of the collimating lens. Therefore, alignment is performed while observing the light beam that has passed through the collimating lens array in a state where power is supplied to the laser element to emit the light beam, and the adjustment of the optical system becomes complicated. Has occurred. At the same time, it means that problems such as a decrease in output due to the displacement of the optical elements are likely to occur after the laser module is mounted on the mount member.
  • a VCSEL element having a small light emission area is not suitable as a high-power and high-condensation laser light source.
  • EEL edge emitting semiconductor laser
  • An object of the present invention is to realize a small, high-power and high-concentration laser module.
  • a laser module includes a plurality of laser elements that respectively emit light beams, a collimating optical system that collimates the light beams emitted from the plurality of laser elements, and a light beam collimated by the collimating optical system. And a condensing optical system for condensing and forming a combined beam.
  • Each of the plurality of laser elements is a photonic crystal surface emitting laser (PCSEL) element, and is arranged in a hexagonal lattice pattern on the same plane.
  • PCSEL photonic crystal surface emitting laser
  • the present invention by using a photonic crystal surface emitting laser element having a large light emitting area and a small divergence angle, it is possible to realize a small, high output and high condensing laser module.
  • FIG. 1 It is a block diagram which shows the laser module by Embodiment 1 of this invention. It is the figure which looked at the base where a plurality of laser elements are arranged from the emission direction of the light beam. It is sectional drawing which shows the exemplary structure of a PCSEL element. It is a figure which shows the behavior of the light inside a photonic crystal layer. It is a figure which shows the behavior of the light inside a photonic crystal layer. It is a figure which shows the behavior of the light inside a photonic crystal layer. It is a figure which shows the behavior of the light inside a photonic crystal layer, Comprising: The in-plane resonance of light is shown.
  • FIG. 1 is a block diagram showing a laser module according to Embodiment 1 of the present invention.
  • the laser module 10 includes a plurality of laser elements 1, a collimating lens array 3, a condensing lens 4, and the like.
  • the laser module 10 is mounted on a mount member (not shown) together with the optical fiber 20 and is configured to couple a laser beam (light beam) emitted from the laser module 10 to the optical fiber 20.
  • the laser module 10 is used for material processing (cutting processing or welding of metal, glass, carbon fiber reinforced plastic (CFRP), resin, etc., welding), optical communication, and the like.
  • the plurality of laser elements 1 are mounted on the main surface (the same plane) of the base 2, and each emits a light beam.
  • the laser element 1 is a photonic crystal surface emitting laser (PCSEL) element.
  • the base 2 is plate-shaped, but may include a cooling mechanism for cooling the laser element, a power supply circuit for supplying power to the laser element, and the like. As shown in FIG. 2, the plurality of laser elements 1 are arranged in a hexagonal lattice shape, and thereby the emitted beams are arranged densely.
  • the laser element 1 is illustrated as a circle, but other shapes such as a rectangle and a hexagon may be used.
  • the laser elements 1 are two-dimensionally arranged, but may be arranged one-dimensionally.
  • the collimating lens array 3 converts the light beam emitted from each laser element 1 into a parallel beam.
  • a plurality of collimating lenses corresponding to the number of the laser elements 1 are integrated so that the light beams emitted from the plurality of laser elements 1 are received on the same axis.
  • the collimating lenses are arranged in a hexagonal close-packed manner corresponding to the plurality of laser elements 1 being arranged in a hexagonal lattice shape.
  • the collimating lens array 3 is disposed at a position where adjacent light beams are in contact (or substantially in contact) with each other. At this time, the distance between the laser element 1 and the collimating lens array 3 is determined based on the divergence angle of the light beam and the beam diameter on the light emitting surface of the laser element 1.
  • the collimating lens array 3 Due to the configuration of the collimating lens array 3, the light beams that are adjacent to each other out of the parallel beams are emitted from the collimating lens array 3.
  • the beam diameter of the light beams matches the effective diameter of each lens included in the collimating lens array 3.
  • the beam diameter of the light beam is 1 / e2 (13.5%) of the peak value (or the value on the optical axis) of the radiation intensity of the light beam on a plane orthogonal to the optical axis.
  • the “beam diameter” in the embodiment of the present invention is not limited to the size defined in this way, and depends on the required energy extraction rate of the light beam. Can be changed.
  • the condensing lens 4 condenses a plurality of parallel beams emitted from the collimating lens array 3 toward the coupling end surface of the core of the optical fiber 20. Since the adjacent light beams of the parallel beams emitted from the collimating lens array 3 are in contact with each other, the adjacent light beams are also in contact with each other with respect to the combined beam formed by the condenser lens 4.
  • the incident angle ⁇ of the light beam at the time of fiber coupling needs to be a value equal to or smaller than the maximum light receiving angle ⁇ max corresponding to the NA (numerical aperture) of the optical fiber 20.
  • the focal length of the condensing lens 4 is determined based on the distance between the condensing lens 4 and the optical fiber 20 so that the incident angle ⁇ is equal to or smaller than the maximum light receiving angle ⁇ max .
  • the collimating lens array 3 is an example of a collimating optical system
  • the condensing lens 4 is an example of a condensing optical system.
  • a plurality of collimating lenses may be used as the collimating optical system, or a lens that functions as a collimating optical system and a condensing optical system may be used.
  • the combined beam emitted from the laser module 10 is fiber-coupled with adjacent light beams in contact with each other. Thereby, the condensing property of the light beam after fiber coupling improves.
  • the plurality of light beams incident on the optical fiber 20 propagate through the core of the optical fiber 20 and are combined into one light beam, and are emitted from the emission end face of the optical fiber 20 as a high energy light beam.
  • the optical fiber 20 by transmitting the light beam to the outside using the optical fiber 20, a complicated beam transmission optical system is not necessary, which is convenient for various applications.
  • the intensity distribution before fiber coupling is made uniform in the course of fiber transmission, so that the beam quality can be improved.
  • the fiber transmission realizes the rotational symmetry of the light beam, which is an important factor for two-dimensional laser processing.
  • the PCSEL element is a surface emitting semiconductor laser element in which a photonic crystal structure having a period similar to the wavelength of light is provided in the vicinity of an active layer, and can emit uniform coherent light.
  • the semiconductor material used for manufacturing the PCSEL element and the period of the photonic crystal structure By adjusting the semiconductor material used for manufacturing the PCSEL element and the period of the photonic crystal structure, the wavelength of the light beam emitted from the PCSEL element can be controlled.
  • the transverse mode of the emitted beam changes according to the area of the light emitting surface, and the light beam condensing performance decreases as the light emitting surface is increased for higher output.
  • the PCSEL element can increase the output while maintaining a high light collecting property even if the light emitting surface is enlarged.
  • the longitudinal mode a conventional laser diode emits a light beam having a wavelength in a certain region corresponding to the gain width of the active layer, whereas a PCSEL element has a single mode defined by the lattice constant of the photonic crystal. Only a light beam of one wavelength is emitted.
  • FIG. 3 is a cross-sectional view illustrating an exemplary structure of a PCSEL element.
  • the light beam emission direction is defined as the z direction
  • the + z side is the front side
  • the ⁇ z side is the back side.
  • As a material of the stacked body 100 for example, GaAs (gallium arsenide) is used.
  • the PCSEL element is provided in a window formed by the laminated body 100, a window electrode 110 provided on the surface of the laminated body 100, a back electrode 120 provided on the back surface of the laminated body 100, and the window electrode 110.
  • an anti-reflection (AR) coating layer (anti-reflection coating) 130 is used.
  • This window portion becomes a light beam emission surface (light emission surface).
  • the laminate 100 includes a substrate 101, an n-type cladding layer 102, an active layer 103, a carrier block layer 104, a photonic crystal layer 105, a p-type cladding layer 106, and a p-type contact layer 107.
  • the carrier block layer 104 is an undoped layer.
  • holes 105b are formed in the slab layer denoted by reference numeral 105a.
  • the lattice shape of the photonic crystal layer 105 is arbitrary such as a square lattice, a triangular lattice, or an orthogonal lattice.
  • the order of the active layer 103, the carrier block layer 104, and the photonic crystal layer 105 may be reversed.
  • the laser oscillation wavelength is determined by the material and period of the photonic crystal.
  • the refractive index of GaAs used for the photonic crystal layer 105 is about 3.5, and the refractive index of air holes (air) is 1.
  • the effective refractive index in the vicinity of the active layer 103 is about 3.3.
  • the period of the photonic crystal is 980 nm / 3.3 ⁇ 295 nm. However, this period changes according to the laminated structure of the laminated body 100 or the like.
  • a PCSEL element including steps S1 to S4
  • steps S1 to S4 On the back surface of the substrate 101, the n-type cladding layer 102, the active layer 103, the carrier block layer 104, and the slab layer 105a are epitaxially grown by, for example, metal organic chemical vapor deposition (MOCVD).
  • MOCVD metal organic chemical vapor deposition
  • S2 The photonic crystal layer 105 is formed by patterning a resist on the slab layer 105a and etching the slab layer 105a by, for example, reactive ion etching (RIE) to form holes 105b.
  • RIE reactive ion etching
  • the p-type cladding layer 106 and the p-type contact layer 107 are epitaxially regrown by, for example, metal organic vapor phase epitaxy.
  • the window electrode 110 is provided on the surface of the n-type cladding layer 102, and the back electrode 120 is provided on the back surface of the p-type contact layer 107 by vapor deposition.
  • 4A to 4C are top views of the photonic crystal layer 105.
  • FIG. 4A to FIG. 4C the shape of the hole 105b is illustratively a perfect circle. Since the photonic crystal layer 105 is located in the vicinity of the active layer 103, the photonic crystal layer 105 exhibits a binding action on the light generated in the active layer 103.
  • the lattice shape of the photonic crystal is arbitrary, but here it is assumed that it is a square lattice shape that is easy to design.
  • the lattice constant of the photonic crystal is equal to the wavelength ⁇ of light generated in the active layer 103.
  • the light 201 having a wavelength indicated by an arrow in FIG. 4A is generated.
  • the lattice constant of the photonic crystal is ⁇
  • the light 201 is diffracted in the direction of 90 ° or 180 ° as shown in FIG. 4B to generate diffracted light 2021 and 2022, respectively.
  • the diffracted lights 2021 and 2022 are further diffracted in the direction of 90 ° or 180 ° as shown in FIG. 4C to generate diffracted lights 2031 and 2032 respectively.
  • FIG. 4C it can be seen that the diffracted light 2021 and the diffracted light 2032 and the diffracted light 2022 and the diffracted light 2032 interfere with each other to form a standing wave.
  • FIGS. 4A to 4C diffraction in the plane on which the photonic crystal is formed is considered, but naturally constructive interference also occurs in a direction perpendicular to the photonic crystal plane.
  • the light confined within the plane and resonated is extracted as a laser beam in the direction perpendicular to the plane.
  • FIG. 5A is a diagram corresponding to FIG. 4C and shows in-plane resonance of light. Diffracted lights 301 and 302 having an optical path difference equal to twice the wavelength ⁇ interfere with each other.
  • the shape of the hole 105b is a perfect circle, but in FIG. 5A, it is a triangle. It has been found that by making the shape of the air holes 105b triangular, the beam quality is improved as compared with the case of a perfect circle.
  • FIG. 5B shows the direct extraction of the light. Diffracted lights 303 and 304 having an optical path difference equal to the wavelength ⁇ interfere with each other.
  • the light beam is emitted in the two-sided direct direction (two directions).
  • the light reflection by the back electrode 120 is used as in the PCSEL element.
  • the light beam is emitted only from the surface side.
  • a conventional VCSEL device using a laser module has a small light emission area of about several ⁇ m square. Accordingly, adjacent light beams of the light beams emitted from the VCSEL element overlap each other at a position of several mm or less after the emission. Therefore, in order to produce parallel beams in contact with each other, it is necessary to shorten the installation position and focal length of the collimating lens from several hundred ⁇ m to several mm.
  • 40 ⁇ 40 VCSEL elements are arranged in a 1 cm ⁇ 1 cm region at a pitch of 0.25 mm vertically and horizontally.
  • a microlens array having a focal length of 0.776 mm and a curvature radius of 0.357 mm is used.
  • the light beam emitted from the PCSEL element has a light emitting area of several hundred ⁇ m square or more and a small divergence angle of about 1 degree. Therefore, the distance between the laser element 1 and the collimating lens array 3 and the focal length of the collimating lens array 3 are several to several tens mm while the size in the direction orthogonal to the optical axis of the laser module 10 is kept small. It can be as large as 100 mm. At this time, since collimated lens arrays 3 emit parallel beams in contact with each other, it is possible to obtain a combined beam with high light condensing performance.
  • Non-Patent Document 1 similarly to the configuration of Non-Patent Document 1, consider a case where a plurality of laser elements 1 are arranged at a pitch of 0.25 mm. For example, when considering a PCSEL element having a light emitting area of 0.2 mm square and operating in a transverse single mode, the light beam emitted from the adjacent laser element 1 propagates by about 12.3 mm until it comes into contact. Therefore, the focal length of the collimating lens is also about 12.3 mm, which can be increased by 10 times or more compared with 0.776 mm in the case of Non-Patent Document 1.
  • the focal length of the collimating lens array 3 can be increased, the curvature of the lens does not increase as in the case where a VCSEL element is used. Does not increase.
  • it is not necessary to consider the influence of aberration it is not necessary to use an aspheric lens that is difficult to manufacture with high accuracy. Further, the problem that the adjustment of the optical system becomes complicated is also solved.
  • the beam width of each light beam is expanded to the same extent as the width of each collimating lens, and parallelization is performed. Manufacturing accuracy is also important.
  • the curvature of each lens becomes large. Therefore, when manufacturing a lens array in which lenses are arranged closely, there is a problem that the manufacturing accuracy of the indented portion of the lens array decreases. .
  • 15A and 15B show two types of plano-convex lens arrays as an example.
  • the angle of the concave portion Vb at the boundary of the lens is large and shallow, whereas in the short focal length lens array shown in FIG. 15A, there are two curved surfaces.
  • the angle of the indentation portion Va at the boundary is small and deep. Therefore, the manufacturing accuracy is reduced in a lens array having a short focal length.
  • FIG. FIG. 6 is a block diagram showing a laser module according to Embodiment 2 of the present invention.
  • the emission position and emission angle of the light beam may be shifted from each other.
  • a plurality of laser elements (discrete elements) 1 shown in FIG. 1 are integrated as a laser element array 11 on a single semiconductor substrate.
  • This utilizes the characteristic that PCSEL elements can be manufactured by a semiconductor manufacturing process and can be simultaneously manufactured and integrated on a single semiconductor substrate.
  • the emission positions and emission angles of the light beams emitted from the plurality of laser elements 1 can be made uniform.
  • FIG. 7 is a block diagram showing a laser module according to Embodiment 3 of the present invention.
  • Non-Patent Document 2 reports a CW (continuous oscillation) output of 0.5 W in a single mode from an emission surface of 0.2 mm ⁇ 0.2 mm.
  • a 1 mm ⁇ 1 mm PCSEL element has an output of 10 W, and can be applied to metal processing applications.
  • this laser element when this laser element is actually modularized, an arrangement interval of about 2 mm may be required for power supply, cooling, and the like.
  • the distance between the laser element and the collimating lens and the focal length of the collimating lens need to be about 110 mm.
  • the concave lens array 5 is disposed between the plurality of laser elements 1 and the collimating lens array 3.
  • the concave lens array 5 has a function of expanding the beam diameter (beam divergence angle) of each light beam emitted from the plurality of laser elements 1. That is, the concave lens array 5 and the collimating lens array 3 constitute a beam expander (beam expanding optical system).
  • the third embodiment by increasing the beam diameter of the light beam using the concave lens array 5, it is possible to prevent an increase in the optical path length and an increase in the size of the laser module 10 due to an increase in output.
  • the concave lens array 5 in which the same number of concave lenses (focal length 5.5 mm) as the laser elements are integrated at a position of 5.5 mm from the laser element array 11 where the laser elements are arranged at a pitch of 2 mm is used.
  • the beam divergence angle is expanded, and as a result, adjacent light beams come into contact with each other at a position of about 12.3 mm from the laser element array 11.
  • the collimating lens array 3 having a focal length of 12.3 mm at this position, it is possible to configure a multiplexing optical system of a high output module while maintaining the same optical path length as the optical system exemplified in the first embodiment. It is. With this configuration, it is possible to prevent an increase in the size of the optical system.
  • the focal length of the lens exemplified in the third embodiment is several mm or more, which is sufficiently larger than the focal length of 0.776 mm of the collimating lens described in Non-Patent Document 1. Therefore, the focal length of the third embodiment is as follows.
  • the configuration does not hinder the effect described in the first embodiment (the optical system can be easily aligned).
  • the size of the module can be further reduced.
  • the laser element array 11 is used as the laser module 10 shown in FIG. 7, but a plurality of laser elements (discrete elements) 1 shown in FIG. 1 may be used.
  • FIG. 8 is a view showing a compound lens of a laser module according to a modification of the third embodiment of the present invention.
  • the concave lens array 5 and the collimating lens array 3 are integrated as one compound lens 15.
  • the light beam L IN incident on the composite lens 15 is expanded in the compound lens 15, and emits collimated in a state of contact with each other (the light beam L OUT).
  • FIG. 9 is a diagram corresponding to FIG. 14 described later. Configurations not shown in FIG. 9 in the fourth embodiment are the same as those in the first embodiment.
  • the laser module 10 includes a control device 40 configured to selectively turn on / off each of the plurality of laser elements 1. By performing lighting control of the laser element 1 using the control device 40, the beam profile of the combined beam is controlled.
  • the control device 40 includes a storage unit that stores a lighting control pattern of each laser element 1, a processing unit that performs lighting control, and the like.
  • ⁇ is the wavelength of the light beam
  • d 0 is the radius of the light beam at the beam waist
  • ⁇ is the half angle of the light beam in the far field.
  • the smaller the M 2 value the smaller the beam divergence.
  • the laser element 1 closer to the center is turned on and the surrounding laser elements 1 are turned off, so that the value of M 2 becomes closer to 1.
  • a broken line 401, a one-dot chain line 402, and a two-dot chain line 403 indicate lighting ranges corresponding to M 2 to 9, M 2 to 11, and M 2 to 13, respectively.
  • the value of M 2 can be changed according to the application of the laser module 10.
  • the optimum beam shape varies depending on the processing application.
  • a high-focus Gaussian mode light beam whose intensity distribution is shown in FIG. 10A is suitable for cutting a thin metal plate. Therefore, only the laser element 1 near the center needs to be turned on.
  • a donut-shaped light beam whose intensity distribution is shown in FIG. 10B is suitable for cutting a thick metal plate. Therefore, if the laser element 1 near the center is turned off and the surrounding laser element 1 is turned on. Good.
  • a top hat type light beam having an intensity distribution shown in FIG. 10C is necessary, all the laser elements 1 may be turned on.
  • the light collecting property is excellent without mechanical change such as switching of the optical system.
  • a light collection intensity distribution suitable for each processing application can be obtained.
  • FIG. A laser module according to Embodiment 5 of the present invention will be described with reference to FIGS. 11A and 11B and FIGS. 12A and 12B.
  • configurations not shown in FIGS. 11A and 11B and FIGS. 12A and 12B are the same as those in the first embodiment.
  • the polarization control of the combined beam is performed by configuring each laser element 1 to emit light beams having different polarization directions.
  • the direction of polarized light emitted by each laser element 1 changes according to the shape of the hole 105 b formed in the photonic crystal layer 105. For example, by making the shape of the hole 105b an ellipse, the polarization direction is aligned with the major axis direction of the ellipse.
  • the combined beam 502 is along the peripheral direction of the optical axis as indicated by the arrow 503 in FIG. 11B.
  • Polarized light azimuth polarized light.
  • the S-polarized light with low absorptance and high reflectivity is incident on the inner wall of the keyhole, increasing the beam arrival rate to the bottom surface of the keyhole, and processing deep holes. It can be suitably performed.
  • each laser element 1 When each laser element 1 is arranged so as to emit a light beam whose polarization direction is represented by an arrow 601 in FIG. 12A (orthogonal to the arrow 501 in FIG. 11A), the combined beam 602 is an arrow in FIG. 12B. As indicated by reference numeral 603, the light is polarized along the radial direction from the optical axis (radial polarized light). When using radially polarized light for laser cutting, P-polarized light having a high absorptance is incident on the keyhole, so that the material cutting performance is improved.
  • the central laser element 1 may be removed if necessary.
  • a set of laser elements that produce azimuth polarization and a set of laser elements that produce radial polarization are mounted on the base 2 in a mixed state, and are combined using the control device 40 described in the fourth embodiment.
  • the polarization state of the beam can be electrically switched. This makes it possible to perform laser processing using a light beam suitable for the application.
  • the combined beam is an axially symmetric polarized beam (azimuth polarized light, radial polarized light) has been described.
  • other polarization states for example, straight lines and circles
  • straight lines and circles may be used depending on the application.
  • FIG. FIG. 13 is a block diagram showing a laser machining apparatus according to Embodiment 6 of the present invention.
  • the laser processing apparatus 1000 includes a laser module 10 according to any one of Embodiments 1 to 5 or any combination thereof, an optical fiber 20 that transmits a light beam emitted from the laser module 10, and light emitted from the optical fiber 20. And a processing head 30 for irradiating the workpiece W with the beam.
  • the processing head 30 is a hollow cylindrical member, and is provided with processing lenses 31 and 32 that collimate and collect a light beam to form a light spot at a processing point of the workpiece W.
  • the tip of the processing head 30 is formed in a nozzle shape so that the light beam collected by the processing lens 32 passes and the assist gas is supplied toward the workpiece W.
  • a carbon dioxide laser or a fiber laser having an output of about 1 kW to about 6 kW and a light condensing property of about 4 mm ⁇ mrad is often used.
  • a PCSEL element that oscillates vertically and horizontally in a wavelength band of 900 nm as a light source.
  • the multiplexing optical system described in the first to fifth embodiments is used, as shown in FIG.
  • 11 laser elements 1 are arranged in a hexagonal lattice shape in the diametrical direction, thereby collecting light of about 4 mm ⁇ mrad. Can be realized. If 9 to 13 laser elements 1 are arranged in the diametrical direction, a light beam having a condensing property suitable for sheet metal cutting can be obtained.
  • the laser output of the laser module 10 is about 1 kW. More than four times the combined beam emitted from the laser module 10 by using polarization coupling that superimposes two light beams having orthogonal polarizations and wavelength coupling that superimposes two or more light beams having different wavelengths. By superimposing the light beam, a light beam having the same output (about 1 kW to about 6 kW) and condensing performance as a conventional sheet metal cutting laser can be obtained.
  • a laser having a light condensing property of about 8 mm ⁇ mrad to about 12 mm ⁇ mrad is often used.
  • a laser module in which 25 to 41 laser elements 1 are arranged in the diameter direction a light beam having a condensing property suitable for metal welding can be obtained.
  • FIG. 14 shows a structure in which 91 laser elements 1 are arranged in a hexagonal lattice shape, the laser elements 1 are arranged so that a hexagonal shape is close to a circle bulging outward on the side. May be.
  • Embodiment 7 FIG. A laser module according to the seventh embodiment of the present invention will be described with reference to FIG. Configurations not shown in FIG. 16 in the seventh embodiment are the same as those in the first embodiment.
  • a laser element denoted by reference numeral 701 (indicated by a white circle in FIG. 16) and a laser element denoted by reference numeral 702 (indicated by a black circle in FIG. 16) are the same PCSEL elements as the laser element 1 described so far. It is.
  • the laser element 701 and the laser element 702 are different from each other in the material and period of the photonic crystal constituting the photonic crystal layer 105 (see FIG. 3).
  • the laser elements 701 and 702 emit light beams having different wavelengths ⁇ 1 and ⁇ 2.
  • Laser elements 701 and laser elements 702 are arranged alternately on the base 2 in the horizontal direction of the drawing.
  • the laser module 10 includes a control device 70 configured to switch on / off of the laser elements 701 and 702.
  • the control device 70 includes a storage unit that stores lighting control patterns of the laser elements 701 and 702, a processing unit that executes lighting control, and the like.
  • the light absorption characteristic differs depending on the material. Therefore, in laser processing, it is preferable to select an optimum wavelength of laser light according to the material of the workpiece.
  • the peak wavelength of light absorption is about 850 nm.
  • the workpiece is a copper material
  • the light absorptance monotonously decreases as the wavelength increases in a wavelength region of about 400 nm or more. Therefore, workability can be improved by using an optical laser having a wavelength of about 850 nm for processing the aluminum material and using an optical laser having a wavelength of less than about 400 nm for processing the copper material.
  • the wavelength of the combined beam becomes ⁇ 1 or ⁇ 2.
  • the example in which the laser elements 701 and 702 are alternately arranged on the base 2 in the horizontal direction on the paper surface has been described, but an arrangement pattern different from that in FIG. 16 may be used.
  • the outermost hexagon of a plurality of hexagons forming a hexagonal lattice is defined by a laser element 701 (which emits laser light having a wavelength ⁇ 1), and the inner hexagon is a laser element.
  • the laser elements 701 and 702 are alternately arranged in the radial direction on the base 2 so as to be defined by 702 (emitting a laser beam having a wavelength ⁇ 2) and the hexagon inside thereof is defined by the laser element 701. May be.
  • the laser module 10 is configured to selectively emit combined beams having two different wavelengths ( ⁇ 1 and ⁇ 2) has been described.
  • a combined beam having wavelengths ( ⁇ 1, ⁇ 2, ⁇ 3,%) May be selectively emitted.
  • control device 70 is configured to turn on the laser element that emits the light beam having any one wavelength.
  • the light beam having two or more wavelengths is emitted.
  • the laser elements to be turned on may be turned on simultaneously.
  • 1 laser element PCSEL element
  • 2 base 3 collimating lens array
  • 4 condensing lens 5 concave lens array
  • 10 laser module 11 laser element array
  • 15 compound lens 20 optical fiber
  • 30 processing head 40, 70 control Equipment, 1000 laser processing equipment

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Laser Beam Processing (AREA)

Abstract

L'invention a trait à un module laser (10), qui est doté : d'une pluralité d'éléments laser (1) émettant respectivement des faisceaux optiques ; d'un système optique collimateur (3) qui parallélise les faisceaux optiques ainsi émis ; et d'un système optique capteur de lumière (4) capturant les faisceaux optiques ainsi parallélisés. Tous les éléments laser (1) sont des éléments laser à émission par la surface à cristaux photoniques (PCSEL). Les éléments laser sont disposés en forme de réseau hexagonal sur un même plan d'une base (2).
PCT/JP2016/050990 2015-02-09 2016-01-14 Module laser et appareil d'usinage laser WO2016129323A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015022851A JP2018056148A (ja) 2015-02-09 2015-02-09 レーザモジュールおよびレーザ加工装置
JP2015-022851 2015-02-09

Publications (1)

Publication Number Publication Date
WO2016129323A1 true WO2016129323A1 (fr) 2016-08-18

Family

ID=56615096

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/050990 WO2016129323A1 (fr) 2015-02-09 2016-01-14 Module laser et appareil d'usinage laser

Country Status (2)

Country Link
JP (1) JP2018056148A (fr)
WO (1) WO2016129323A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106785895A (zh) * 2016-11-30 2017-05-31 中国科学院半导体研究所 一种基于光子晶体激光器合束的装置
WO2020059664A1 (fr) * 2018-09-18 2020-03-26 三菱電機株式会社 Système optique de multiplexage
CN112260064A (zh) * 2020-10-21 2021-01-22 中国科学院半导体研究所 一种光束缩束装置及其方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112119547A (zh) * 2018-04-24 2020-12-22 贝克顿·迪金森公司 具有经修改的光束轮廓的多激光器系统及其使用方法
FR3081738B1 (fr) * 2018-06-05 2020-09-04 Imagine Optic Procedes et systemes pour la generation d'impulsions laser de forte puissance crete
JPWO2020194625A1 (ja) * 2019-03-27 2021-04-30 三菱電機株式会社 レーザ装置およびレーザ加工機

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1117268A (ja) * 1997-06-23 1999-01-22 Res Dev Corp Of Japan 半導体レーザーアレイ装置
JP2002026466A (ja) * 2000-07-11 2002-01-25 Toyota Central Res & Dev Lab Inc 集光光学系及びレーザ加工機用光源
JP2005177825A (ja) * 2003-12-22 2005-07-07 Sumitomo Electric Hardmetal Corp 長距離伝送用光学系と長距離伝送用スキャンレンズ
WO2007007766A1 (fr) * 2005-07-13 2007-01-18 The Furukawa Electric Co., Ltd. Dispositif d'irradiation de lumiere et procede de soudage
JP2007275908A (ja) * 2006-04-03 2007-10-25 Nippon Sharyo Seizo Kaisha Ltd レーザ加工装置
JP2010263062A (ja) * 2009-05-07 2010-11-18 Canon Inc 面発光レーザアレイ及びその製造方法
JP2013502717A (ja) * 2009-08-20 2013-01-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 設定変更可能な輝度分布を備えるレーザー装置
WO2013058072A1 (fr) * 2011-10-20 2013-04-25 新日鐵住金株式会社 Dispositif de traitement laser et procédé de traitement laser

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1117268A (ja) * 1997-06-23 1999-01-22 Res Dev Corp Of Japan 半導体レーザーアレイ装置
JP2002026466A (ja) * 2000-07-11 2002-01-25 Toyota Central Res & Dev Lab Inc 集光光学系及びレーザ加工機用光源
JP2005177825A (ja) * 2003-12-22 2005-07-07 Sumitomo Electric Hardmetal Corp 長距離伝送用光学系と長距離伝送用スキャンレンズ
WO2007007766A1 (fr) * 2005-07-13 2007-01-18 The Furukawa Electric Co., Ltd. Dispositif d'irradiation de lumiere et procede de soudage
JP2007275908A (ja) * 2006-04-03 2007-10-25 Nippon Sharyo Seizo Kaisha Ltd レーザ加工装置
JP2010263062A (ja) * 2009-05-07 2010-11-18 Canon Inc 面発光レーザアレイ及びその製造方法
JP2013502717A (ja) * 2009-08-20 2013-01-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 設定変更可能な輝度分布を備えるレーザー装置
WO2013058072A1 (fr) * 2011-10-20 2013-04-25 新日鐵住金株式会社 Dispositif de traitement laser et procédé de traitement laser

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106785895A (zh) * 2016-11-30 2017-05-31 中国科学院半导体研究所 一种基于光子晶体激光器合束的装置
WO2020059664A1 (fr) * 2018-09-18 2020-03-26 三菱電機株式会社 Système optique de multiplexage
JPWO2020059664A1 (ja) * 2018-09-18 2021-01-07 三菱電機株式会社 合波光学系
CN112673294A (zh) * 2018-09-18 2021-04-16 三菱电机株式会社 复用光学系统
US11822125B2 (en) 2018-09-18 2023-11-21 Mitsubishi Electric Corporation Multiplexing optical system
CN112260064A (zh) * 2020-10-21 2021-01-22 中国科学院半导体研究所 一种光束缩束装置及其方法

Also Published As

Publication number Publication date
JP2018056148A (ja) 2018-04-05

Similar Documents

Publication Publication Date Title
WO2016129323A1 (fr) Module laser et appareil d'usinage laser
JP6132995B2 (ja) レーザモジュールおよびレーザ加工装置
JP6374017B2 (ja) 半導体レーザ発振器
CN107611775B (zh) 一种半导体激光器及其制作方法
US20160094016A1 (en) Increasing the spatial and spectral brightness of laser diode arrays
JP6157194B2 (ja) レーザ装置および光ビームの波長結合方法
US10732426B2 (en) Two-dimensional coherent beam combination using circular or spiral diffraction grating
US11108214B2 (en) Wavelength combining laser apparatus
WO2020078197A1 (fr) Laser semi-conducteur
CN102208753A (zh) 多波长联合外腔半导体激光器
US20070217466A1 (en) Two-dimensional photonic crystal surface light emitting laser
JP2007258260A (ja) ２次元フォトニック結晶面発光レーザ
JP2007194597A (ja) 外部共振器型の面発光レーザ
JP4002286B2 (ja) 半導体レーザ装置
US20070268941A1 (en) Vertical external cavity surface emitting laser and method thereof
JP6522166B2 (ja) レーザ装置
JP2023099577A (ja) 光源装置、ダイレクトダイオードレーザ装置、および光結合器
JP4744895B2 (ja) テラヘルツ波発生装置
JP5717989B2 (ja) レーザ装置
JP2007300015A (ja) 光学装置
JPH1168197A (ja) 半導体レーザ励起固体レーザ装置
Sills et al. In-phase coherently-coupled optically-pumped VECSEL array
US20230187907A1 (en) Wavelength beam combining device, direct diode laser device, and laser processing machine
JPH10261825A (ja) 半導体レーザ光整形光学系及び半導体レーザ励起固体レーザ装置
JP7151497B2 (ja) 光源装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16748968

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: JP

122 Ep: pct application non-entry in european phase

Ref document number: 16748968

Country of ref document: EP

Kind code of ref document: A1