WO2016104491A1 - 赤外線遮蔽性組成物、硬化膜及び固体撮像装置 - Google Patents
赤外線遮蔽性組成物、硬化膜及び固体撮像装置 Download PDFInfo
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- WO2016104491A1 WO2016104491A1 PCT/JP2015/085808 JP2015085808W WO2016104491A1 WO 2016104491 A1 WO2016104491 A1 WO 2016104491A1 JP 2015085808 W JP2015085808 W JP 2015085808W WO 2016104491 A1 WO2016104491 A1 WO 2016104491A1
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- SEUGQQYRPAEMFC-UHFFFAOYSA-N triethoxy(pyren-1-yl)silane Chemical compound C1=C2C([Si](OCC)(OCC)OCC)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 SEUGQQYRPAEMFC-UHFFFAOYSA-N 0.000 description 1
- ZPVOOHGAOUIGCO-UHFFFAOYSA-N triethoxy-(2,4,6-trimethylphenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=C(C)C=C(C)C=C1C ZPVOOHGAOUIGCO-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- GIULLRLLAPLKNF-UHFFFAOYSA-N trimethoxy(pyren-1-yl)silane Chemical compound C1=C2C([Si](OC)(OC)OC)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 GIULLRLLAPLKNF-UHFFFAOYSA-N 0.000 description 1
- YHSVAMPZUHRVHF-UHFFFAOYSA-N trimethoxy-(2,4,6-trimethylphenyl)silane Chemical compound CO[Si](OC)(OC)C1=C(C)C=C(C)C=C1C YHSVAMPZUHRVHF-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N urea group Chemical group NC(=O)N XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical group O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/014—Stabilisers against oxidation, heat, light or ozone
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/005—Stabilisers against oxidation, heat, light, ozone
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
Definitions
- the present invention relates to an infrared shielding composition, a cured film, and a solid-state imaging device, and more specifically, an infrared shielding composition suitable for forming a cured film used for an infrared cut filter, and the like. And a solid-state imaging device including the cured film.
- An imaging device such as a digital camera is equipped with a semiconductor solid-state imaging device such as a CCD image sensor or a CMOS image sensor. Since the sensitivity of these solid-state imaging devices ranges from the visible region to the infrared region, an imaging device is provided with an infrared cut filter for blocking infrared rays between the imaging lens and the solid-state imaging device. With this infrared cut filter, the sensitivity of the solid-state imaging device can be corrected so as to approach human visibility.
- an infrared cut filter for example, an infrared absorbing composition containing an infrared absorbent such as a metal oxide or a diimmonium dye, an alkali-soluble binder resin, and a polymerizable compound such as a (meth) acrylic monomer is used as a film.
- an infrared cut filter for example, an infrared absorbing composition containing an infrared absorbent such as a metal oxide or a diimmonium dye, an alkali-soluble binder resin, and a polymerizable compound such as a (meth) acrylic monomer is used as a film.
- the one cured is known (Patent Documents 1 and 2).
- infrared cut filters mainly use hydrocarbon-based polymers as materials.
- the inventors focused on siloxane polymer as a new material and studied the development of an infrared cut filter using the siloxane polymer.
- the siloxane polymer-containing infrared cut filter is a hydrocarbon polymer-containing infrared cut filter that easily cracks. It turns out that there are unique challenges that do not exist. Therefore, the subject of this invention is providing the siloxane polymer containing infrared rays shielding composition which can form the cured film excellent in crack resistance.
- Another object of the present invention is to provide a cured film formed using the infrared shielding composition and a solid-state imaging device including the cured film.
- infrared shielding in this specification means absorption or reflection of infrared rays.
- the present inventors have found that the above problem can be solved by including an infrared shielding agent having a maximum absorption wavelength in a wavelength range of 700 to 2000 nm with a siloxane polymer having a specific structure.
- the present invention is an infrared shielding composition
- an infrared shielding composition comprising (A) an infrared shielding agent having a maximum absorption wavelength in a wavelength range of 700 to 2000 nm, and (B) a siloxane polymer, (B) An infrared shielding composition in which the siloxane polymer has an aromatic hydrocarbon group is provided.
- the present invention includes (A) an infrared shielding agent having a maximum absorption wavelength in a wavelength range of 700 to 2000 nm, and (B) a siloxane polymer.
- the siloxane polymer has a structural unit ⁇ represented by the following formula (1) and a structural unit ⁇ represented by the following formula (3), and the content ratio [ ⁇ / ⁇ ] of the structural unit ⁇ and the structural unit ⁇ : Is an infrared shielding composition having a molar ratio of 100/0 to 5/95.
- R 1 represents an aromatic hydrocarbon group
- R 3 represents a chain hydrocarbon group
- m and n each independently represents an integer of 1 to 3.
- the present invention also provides a cured film formed using the infrared shielding composition, and a solid-state imaging device including the cured film.
- the present invention further comprises a solid-state imaging device comprising a first optical layer that transmits at least part of visible light and infrared light, and a second optical layer that absorbs at least part of infrared light,
- the second optical layer provides a solid-state imaging device having an opening that transmits visible light and infrared light, and comprising a cured film formed using the infrared shielding composition.
- a solid-state imaging device comprising: a first light receiving element that detects the visible light transmitted through an optical layer; and a pixel array that includes a second light receiving element that detects the infrared light transmitted through the first optical layer.
- the second optical layer has an opening at a portion corresponding to the second light receiving element, and the second optical layer is formed of a cured film formed using the infrared shielding composition. It is to provide.
- the present invention further includes a first optical layer that transmits at least part of visible light and infrared light;
- a solid-state imaging device comprising a second optical layer that absorbs at least part of infrared light, The second optical layer has an opening that transmits visible light and infrared light, and is made of a cured film formed by using an infrared shielding composition containing the following components (A) and (B).
- a device is provided.
- B Siloxane polymer having an aromatic hydrocarbon group
- the infrared shielding composition of the present invention has excellent crack resistance and high light shielding properties in the infrared region, despite the use of a siloxane polymer as a raw material. Therefore, the cured film formed using the infrared shielding composition of the present invention can be suitably used as an infrared cut filter, and is extremely useful for producing a solid-state imaging device.
- FIG. 1 is a schematic diagram of a solid-state imaging device according to an embodiment of the present invention. It is a top view of the solid imaging device concerning one embodiment of the present invention. It is sectional drawing which shows the outline of the solid-state imaging device which concerns on one Embodiment of this invention. It is a figure which shows the transmission spectrum of the 1st optical layer used for the solid-state imaging device which concerns on one Embodiment of this invention. It is a figure which shows the transmission spectrum of the 2nd optical layer used for the solid-state imaging device which concerns on one Embodiment of this invention. It is a figure which shows the transmission spectrum of the infrared-light pass filter used for the solid-state imaging device which concerns on one Embodiment of this invention.
- the infrared shielding composition of the present invention comprises (A) component and (B) component.
- A component and (B) component.
- Infrared shielding agent- Component (A) is an infrared shielding agent having a maximum absorption wavelength within a wavelength range of 700 to 2000 nm.
- the component (A) is not particularly limited as long as it has a maximum absorption wavelength within a wavelength range of 700 to 2000 nm.
- diiminium compounds, squarylium compounds, cyanine compounds, phthalocyanine compounds, naphthalocyanine compounds for example, diiminium compounds, squarylium compounds, cyanine compounds, phthalocyanine compounds, naphthalocyanine compounds.
- a component can be used individually or in combination of 2 or more types.
- diiminium (diimmonium) compound examples include, for example, JP-A No. 1-113482, JP-A No. 10-180922, International Publication No. 2003/5076, International Publication No. 2004/48480, International Publication No. 2005. No. 4,44782, International Publication No. 2006/120888, Japanese Unexamined Patent Publication No. 2007-246464, International Publication No. 2007/148595, Japanese Unexamined Patent Publication No. 2011-038007, Paragraph [0118] of International Publication No. 2011/118171, etc. And the compounds described.
- EPOLIGHT series such as EPOLIGHT1178 (manufactured by Epolin)
- CIR-108X series such as CIR-1085 and CIR-96X series (manufactured by Nippon Carlit)
- IRG022, IRG023, PDC-220 Nippon Kayaku
- squarylium compound examples include, for example, Japanese Patent No. 3094037, Japanese Patent Application Laid-Open No. 60-228448, Japanese Patent Application Laid-Open No. 1-146846, Japanese Patent Application Laid-Open No. 1-222896, Japanese Patent Application Laid-Open No. 2012-215806. And compounds described in paragraph [0178] of the publication.
- cyanine compound examples include, for example, paragraphs [0041] to [0042] of JP 2007-271745 A, paragraphs [0016] to [0018] of JP 2007-334325 A, and JP 2009-108267 A.
- NK series manufactured by Hayashibara Biochemical Laboratories
- Daito D chmix 1371F manufactured by Daitokemix
- NK-3212 manufactured by Daitokemix
- NK-5060 and the like.
- phthalocyanine compound examples include, for example, JP-A-60-224589, JP-T-2005-537319, JP-A-4-23868, JP-A-4-39361, JP-A-5-78364.
- JP-A 2000-26748, JP-A 2000-63691, JP-A 2001-106689, JP-A 2004-18561, JP-A 2005-220060, JP-A 2007-169343 Examples thereof include compounds described in JP-A-2013-195480, paragraphs [0026] to [0027] and the like.
- Examples of commercially available products include FB series such as FB-22 and 24 (manufactured by Yamada Chemical Co., Ltd.), Excolor series, Excolor TX-EX 720, 708K (manufactured by Nippon Shokubai), Lumogen IR788 (manufactured by BASF), ABS643, ABS654, ABS667, ABS670T, IRA693N, IRA735 (manufactured by Exciton), SDA3598, SDA6075, SDA8030, SDA8303, SDA8470, SDA3039, SDA3040, SDA3922, SDA7257 (manufactured by H.W.SANDS), TAP-15, IR-15 (Made by industry) etc. can be mentioned.
- FB series such as FB-22 and 24 (manufactured by Yamada Chemical Co., Ltd.)
- Excolor series Excolor TX-EX 720, 708K (manufactured by Nippon Shoku
- naphthalocyanine compounds include, for example, paragraphs [0046] to [0046] in JP-A Nos. 11-152413, 11-152414, 11-152415, and 2009-215542. [0049] and the like.
- Specific examples of the quaterylene-based compound include, for example, compounds described in paragraph [0021] of JP-A-2008-009206.
- Lumogen IR765 made by BASF
- Specific examples of the aminium compound include compounds described in paragraph [0018] of JP-A No. 08-027371, JP-A No. 2007-039343 and the like.
- IRG002, IRG003 (made by Nippon Kayaku Co., Ltd.) etc. can be mentioned, for example.
- Specific examples of the iminium-based compound include compounds described in paragraph [0116] of International Publication No. 2011/118171.
- Specific examples of the azo compound include compounds described in paragraphs [0114] to [0117] of JP 2012-215806 A, for example.
- Specific examples of the anthraquinone compound include compounds described in paragraphs [0128] and [0129] of JP2012-215806A.
- porphyrin-based compound examples include, for example, a compound represented by the formula (1) in Japanese Patent No. 3834479.
- pyrrolopyrrole compounds include compounds described in paragraphs [0014] to [0027] of JP2011-068731A and JP2014130343A.
- oxonol-based compound examples include compounds described in paragraph [0046] of JP-A-2007-271745.
- croconium-based compound include compounds described in paragraph [0049] of JP-A-2007-271745, JP-A-2007-31644, JP-A-2007-169315, and the like.
- Specific examples of the hexaphyrin-based compound include a compound represented by the formula (1) of International Publication No. 2002/016144.
- the metal dithiol compound examples include, for example, JP-A No. 1-114801, JP-A No. 64-74272, JP-A No. 62-39682, JP-A No. 61-80106, and JP-A No. Sho 61-80106. Examples thereof include compounds described in JP-A No. 61-42585 and JP-A No. 61-32003.
- the copper compound is preferably a copper complex, and specific examples include, for example, JP2013-253224A, JP2014-032380A, JP2014-026070A, JP20140261678A, JP Examples thereof include compounds described in JP-A-2014-139616, JP-A-2014-139617, and the like.
- tungsten oxide compound As the tungsten compound, a tungsten oxide compound is preferable, cesium tungsten oxide and rubidium tungsten oxide are more preferable, and cesium tungsten oxide is more preferable.
- Examples of the composition formula of cesium tungsten oxide include Cs 0.33 WO 3 , and examples of the composition formula of rubidium tungsten oxide include Rb 0.33 WO 3 .
- the tungsten oxide compound is also available as a dispersion of tungsten fine particles such as YMF-02A manufactured by Sumitomo Metal Mining Co., Ltd.
- Specific examples of the metal boride include, for example, compounds described in paragraph [0049] of JP2012-068418A. Of these, lanthanum boride is preferable.
- a dispersant may be contained for the purpose of improving the dispersibility and dispersion stability of the component (A).
- the dispersant include a urethane-based dispersant, a polyethyleneimine-based dispersant, a polyoxyethylene alkyl ether-based dispersant, a polyoxyethylene alkylphenyl ether-based dispersant, a polyethylene glycol diester-based dispersant, and a sorbitan fatty acid ester-based dispersant.
- Examples of commercially available products include (meth) acrylic dispersants such as Disperbyk-2000, Disperbyk-2001, BYK-LPN6919, BYK-LPN21116, BYK-LPN22102 (manufactured by BYK (BYK)), Disperbyk-161, Disperbyk.
- Dispersing agent can be used individually or in combination of 2 or more types.
- the content of the dispersing agent can be appropriately selected depending on the type of the dispersing agent, but is preferably 5 to 300 parts by mass, more preferably 10 to 200 parts by mass with respect to 100 parts by mass of the (A) infrared shielding agent.
- the content of the component (A) is preferably 0.1 to 80% by mass, more preferably 1 to 70% by mass, and further preferably 3 to 60% by mass in the solid content of the infrared shielding composition of the present invention. It is. By setting it as such an aspect, infrared rays can fully be shielded.
- the “solid content” in this specification is a component other than the organic solvent described later.
- the (B) siloxane polymer in the present invention has an aromatic hydrocarbon group.
- the “aromatic hydrocarbon group” refers to a hydrocarbon group having an aromatic ring structure in the ring structure, and a monocyclic aromatic hydrocarbon group, benzene rings are condensed with each other or a benzene ring. It is a concept that includes a condensed aromatic hydrocarbon group condensed with another hydrocarbon ring, and a polycyclic aromatic hydrocarbon group in which two or more of a benzene ring and a condensed ring are bonded by a single bond.
- the aromatic hydrocarbon group does not need to be composed only of a ring structure, and a part of the ring structure may be substituted with a chain hydrocarbon group.
- the chain hydrocarbon group include an alkyl group, an alkenyl group, and an alkynyl group, and the chain hydrocarbon group preferably has 1 to 6 carbon atoms, more preferably 1 to 4 carbon atoms.
- the number of carbon atoms of the aromatic hydrocarbon group is not particularly limited, but is preferably 6 to 20, more preferably 6 to 14, and still more preferably 6 to 10.
- aromatic hydrocarbon group examples include, for example, phenyl group, tolyl group, xylyl group, mesityl group, styryl group, indenyl group, naphthyl group, anthryl group, phenanthryl group, fluorenyl group, pyrenyl group, naphthaacenaphthenyl. Group, biphenyl group, terphenyl group and the like. Among them, an aromatic hydrocarbon group having 6 to 14 carbon atoms is preferable, an aryl group having 6 to 14 carbon atoms is more preferable, and a phenyl group, a tolyl group, and a naphthyl group are further preferable.
- the “aryl group” refers to a monocyclic to tricyclic aromatic hydrocarbon group.
- the aromatic hydrocarbon group may have a substituent.
- substituents include a halogen atom, hydroxyl group, mercapto group, alkoxy group, alkoxyalkoxy group, alkylthio group, amino group, dialkylamino group, amide group, alkylamide group, acylamino group, carboxyl group, alkoxycarbonyl group, cyano. And groups having a heterocyclic group.
- heterocyclic group means a heterocyclic group having an oxygen atom, a nitrogen atom, a sulfur atom or the like as a hetero atom constituting the heterocyclic ring, and even if it is a saturated heterocyclic group, It may be an unsaturated heterocyclic group.
- the position and number of substituents are arbitrary, and when having two or more substituents, the substituents may be the same or different.
- Examples of the halogen atom include a fluorine atom, a bromine atom, a chlorine atom, and an iodine atom.
- Examples of the alkoxy group include C 1-6 alkoxy such as a methoxy group, an ethoxy group, an n-propoxy group, and an iso-propoxy group. Groups.
- Examples of the alkoxyalkoxy group include C 2-6 alkoxyalkoxy groups such as a methoxymethoxy group, a methoxyethoxy group, and an ethoxyethoxy group.
- Examples of the alkylthio group include C 1- such as a methylthio group and an ethylthio group. 6 alkylthio group is mentioned.
- dialkylamino group examples include di (C 1-6 alkyl) amino groups such as a dimethylamino group and a diethylamino group.
- alkylamide group examples include C 1-6 such as a methylamide group and an ethylamide group.
- An alkylamide group is mentioned.
- the acylamino group examples include C 2-6 acylamino groups such as acetylamino group and propionylamino group.
- alkoxycarbonyl group examples include C 2-6 alkoxy such as methoxycarbonyl group and ethoxycarbonyl group. A carbonyl group is mentioned.
- the oxygen-containing heterocyclic group in the group having a heterocyclic group is preferably a cyclic ether group having 3 to 7 atoms constituting the ring.
- the cyclic ether group include an oxiranyl group, an oxetanyl group, and 3,4- Examples thereof include an epoxycyclohexyl group and a tetrahydrofuranyl group.
- the group having an oxygen-containing heterocyclic group include a glycidyl group, a glycidyloxy group, an epoxyalkoxy group, and a 3,4-epoxycyclohexyl group.
- epoxy alkoxy group epoxy ( C1-6 alkoxy) groups, such as an epoxy methoxy group and an epoxy ethoxy group, can be mentioned, for example.
- the (B) siloxane polymer in the present invention preferably has an aromatic hydrocarbon group content of at least 5 mol%, more preferably at least 20 mol%, based on Si atoms. 60 mol% or more is still more preferable.
- the content rate of this aromatic hydrocarbon group may be 100 mol% with respect to Si atom, it is good also as 95 mol% or less.
- (B) siloxane polymer those having a structural unit represented by the following formula (1) are preferable from the viewpoint of improving crack resistance.
- R 1 represents an aromatic hydrocarbon group
- m represents an integer of 1 to 3.
- the aromatic hydrocarbon group for R 1 may have a substituent.
- the specific modes of the aromatic hydrocarbon group and the substituent are as described above.
- the (B) siloxane polymer having the structural unit represented by the above formula (1) hydrolyzes at least one selected from a silane compound having an aromatic hydrocarbon group and a hydrolyzable group and a partial hydrolyzate thereof. It can be obtained by decomposing and condensing.
- the “hydrolyzable group” is usually hydrolyzed by heating in the temperature range of room temperature (about 25 ° C.) to about 100 ° C. in the presence of a catalyst and excess water.
- the hydrolyzable group include a halogen atom and an alkoxy group.
- partially hydrolyzed product means a hydrolyzed condensate in which a part of a silane compound is hydrolyzed and silanol groups are condensed. More specifically, it is a siloxane compound (a siloxane oligomer having 2 to 100 silicon atoms, preferably 2 to 30 silicon atoms) in which at least one, preferably two or more hydrolyzable groups remain in the molecule.
- siloxane compound a siloxane oligomer having 2 to 100 silicon atoms, preferably 2 to 30 silicon atoms
- the silane compound having an aromatic hydrocarbon group and a hydrolyzable group is preferably a compound represented by the following formula (2).
- R 2 represents an alkyl group having 1 to 6 carbon atoms, and R 1 and m are as defined above.
- Examples of the alkyl group having 1 to 6 carbon atoms in R 2 include a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, and an n-butyl group. Of these, a methyl group and an ethyl group are preferable from the viewpoint of easy hydrolysis.
- the silane compound represented by the above formula (2) includes a silane compound in which m is 1, a silane compound in which m is 2, a silane compound in which m is 3, or a mixture of two or more thereof.
- silane compound in which m is 1 include, for example, phenyltrimethoxysilane, phenyltriethoxysilane, tolyltrimethoxysilane, tolyltriethoxysilane, xylyltrimethoxysilane, xylyltriethoxysilane, and mesityltrimethoxysilane.
- silane compound in which m is 2 examples include diphenyldimethoxysilane, phenylmethyldimethoxysilane, phenylmethyldiethoxysilane, tolylmethyldimethoxysilane, tolylmethyldiethoxysilane, naphthylmethyldimethoxysilane, and naphthylmethyldiethoxy.
- Examples thereof include silane, methylphenylmethyldimethoxysilane, methylphenylmethyldiethoxysilane, methoxyphenylmethyldimethoxysilane, and methoxyphenylmethyldiethoxysilane. These silane compounds can be used alone or in combination of two or more.
- silane compound in which m is 3 examples include phenyldimethylmethoxysilane, phenyldimethylethoxysilane, tolyldimethylmethoxysilane, tolyldimethylethoxysilane, methoxyphenyldimethylmethoxysilane, methoxyphenyldimethylethoxysilane, and naphthyldimethylmethoxy. Examples thereof include silane and naphthyldimethylethoxysilane. These silane compounds can be used alone or in combination of two or more.
- silane compound represented by the above formula (2) a silane compound in which m in the above formula (2) is 1 from the viewpoint of promoting hydrolysis condensation and improving crack resistance of the obtained cured film. Further preferred.
- a silane compound in which m in the formula (2) is 1 by hydrolyzing and condensing a silane compound in which m in the formula (2) is 1, a (B) siloxane polymer having a structural unit in which m in the formula (1) is 1 is obtained.
- the (B) siloxane polymer may have a structural unit derived from another silane compound other than the structural unit represented by the above formula (1), but it can improve the crack resistance of the obtained cured film.
- the content ratio of the structural unit represented by the formula (1) is preferably 5 mol% or more, more preferably 20 mol% or more, and more preferably 60 mol% or more in the (B) siloxane polymer. More preferably.
- the content rate of the structural unit represented by the said Formula (1) in (B) siloxane polymer may be 100 mol%, and can also be 95 mol% or less.
- the (B) siloxane polymer having the structural unit represented by the above formula (1) and other structural units other than the structural unit includes, for example, a silane compound represented by the above formula (2) and other than the silane compound.
- the silane compound can be obtained by cohydrolytic condensation.
- the partial hydrolyzate may be sufficient as the silane compound used for cohydrolysis condensation.
- Examples of the silane compound that gives other structural units other than the structural unit represented by the formula (1) include, for example, a silane compound having 4 hydrolyzable groups and a disiloxane compound having 6 hydrolyzable groups. And a silane compound having a chain hydrocarbon group or an alicyclic hydrocarbon group and a hydrolyzable group.
- Examples of the hydrolyzable group include a halogen atom and an alkoxy group.
- the chain hydrocarbon group and the alicyclic hydrocarbon group may have a substituent.
- substituents examples include those exemplified for the substituent of the aromatic hydrocarbon group, as well as a (meth) acryloyl group, a (meth) acryloyloxy group, a (meth) acryloyloxypropyl group, and the like.
- the position and number of substituents are arbitrary, and when having two or more substituents, the substituents may be the same or different.
- the chain hydrocarbon group may be linear or branched, and may be saturated or unsaturated.
- Examples of the chain hydrocarbon group include an alkyl group, an alkenyl group, and an alkynyl group, and among them, an alkyl group and an alkenyl group are preferable.
- the chain hydrocarbon group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and still more preferably 1 to 10 carbon atoms.
- alkyl group examples include methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, sec-butyl group, tert-butyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, Undecyl, 1-methyldecyl, dodecyl, 1-methylundecyl, 1-ethyldecyl, tridecyl, tetradecyl, tert-dodecyl, pentadecyl, 1-heptyloctyl, hexadecyl, octadecyl, heneicosane -1-yl group, docosan-1-yl group, tricosan-1-yl group, tetracosan-1-yl group and the like.
- alkenyl group examples include ethenyl group, 1-propenyl group, 2-propenyl group, 1-butenyl group, 2-butenyl group, 1,3-butadienyl group, 1-pentenyl group, 2-pentenyl group, 1 -Hexenyl group, 2-ethyl-2-butenyl group, 2-octenyl group, (4-ethenyl) -5-hexenyl group, 2-decenyl group and the like can be mentioned.
- examples of the alkynyl group include an ethynyl group, a 1-propynyl group, a 1-butynyl group, a 1-pentynyl group, a 3-pentynyl group, a 1-hexynyl group, a 2-ethyl-2-butynyl group, and a 2-octynyl group. , (4-ethynyl) -5-hexynyl group, 2-decynyl group and the like.
- the alicyclic hydrocarbon group may be saturated or unsaturated, and examples thereof include a cycloalkyl group and a cycloalkenyl group.
- the carbon number of the alicyclic hydrocarbon group is preferably 3 to 30, more preferably 3 to 20, and still more preferably 6 to 10.
- Examples of the cycloalkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, and the like.
- Examples of the cycloalkenyl group include a cyclohexenyl group.
- the “alicyclic hydrocarbon group” is a concept that excludes an aliphatic hydrocarbon group having no cyclic structure.
- a structural unit represented by the following formula (3) is preferable from the viewpoint of improving crack resistance.
- R 3 represents a chain hydrocarbon group, and n represents an integer of 0 to 3.
- the chain hydrocarbon group in R 3 may have a substituent.
- the specific aspect of a chain hydrocarbon group and a substituent is as having demonstrated above.
- silane compound that gives the structural unit represented by the above formula (3) a silane compound represented by the following formula (4) is preferable.
- R 4 represents an alkyl group having 1 to 6 carbon atoms, and R 3 and n are as defined above. ]
- Examples of the alkyl group having 1 to 6 carbon atoms in R 4 include a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, and an n-butyl group. Of these, a methyl group and an ethyl group are preferable from the viewpoint of easy hydrolysis.
- the silane compound represented by the above formula (4) includes a silane compound in which n is 0, a silane compound in which n is 1, a silane compound in which n is 2, a silane compound in which n is 3, or those 2 There is a mixture of the above.
- silane compound in which n is 0 examples include, for example, tetramethoxysilane, tetraethoxysilane, tetrabutoxysilane, tetraphenoxysilane, tetrabenzyloxysilane, tetra-n-propoxysilane, tetra-iso-propoxysilane, and the like. Can be mentioned. These silane compounds can be used alone or in combination of two or more.
- silane compound in which n is 1 include, for example, methyltrimethoxysilane, methyltriethoxysilane, methyltri-i-propoxysilane, methyltributoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltri-i -Propoxysilane, ethyltributoxysilane, butyltrimethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltri-n-propoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropyltriethoxysilane, 3 -Acryloxypropyltrimethoxysilane, 3-acryloxypropyltriethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropyltriethoxysilane,
- silane compound in which n is 2 examples include dimethyldimethoxysilane and dibutyldimethoxysilane. These silane compounds can be used alone or in combination of two or more.
- silane compound in which n is 3 examples include, for example, tributylmethoxysilane, trimethylmethoxysilane, trimethylethoxysilane, tributylethoxysilane and the like. These silane compounds can be used alone or in combination of two or more.
- silane compounds represented by the above formula (4) a silane compound in which n is 0, a silane compound in which n is 1 are preferable, and a silane compound in which n is 1 is more preferable.
- the (B) siloxane polymer used in the present invention has a structural unit ⁇ represented by the above formula (1) and a structural unit ⁇ represented by the above formula (3).
- the content ratio [ ⁇ / ⁇ ] is preferably 100/0 to 5/95 in molar ratio.
- the siloxane polymer is a structural unit ⁇ in the (B) siloxane polymer from the viewpoint of further improving crack resistance and infrared shielding properties, reducing haze, and suppressing generation of development residue at a higher level.
- Such (B) siloxane polymer can be produced by an appropriate method.
- the conditions for the hydrolytic condensation include hydrolyzing at least a part of the silane compound represented by the above formula (2) and, if necessary, the silane compound represented by the above formula (4) to convert the hydrolyzable group into silanol.
- the water used for the hydrolytic condensation is preferably water purified by a method such as reverse osmosis membrane treatment, ion exchange treatment or distillation. By using such purified water, side reactions can be suppressed and the reactivity of hydrolysis can be improved.
- the amount of water used is 1 mol of the total amount of the hydrolyzable group of the silane compound represented by the above formula (2) and the hydrolyzable group of the silane compound represented by the above formula (4) used as necessary.
- the amount is preferably 0.1 to 3 mol, more preferably 0.3 to 2 mol, and still more preferably 0.5 to 1.5 mol. By using such an amount of water, the reaction rate of the hydrolysis condensation can be optimized.
- a solvent may be used for the hydrolysis condensation, and the solvent is not particularly limited as long as it does not prevent hydrolysis condensation.
- ethylene glycol monoalkyl ether acetate, diethylene glycol dialkyl ether, propylene glycol examples thereof include monoalkyl ether, propylene glycol monoalkyl ether acetate, and propionic acid ester.
- diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether acetate, and methyl 3-methoxypropionate are preferable.
- the hydrolysis condensation reaction is preferably an acid catalyst (for example, hydrochloric acid, sulfuric acid, nitric acid, formic acid, oxalic acid, maleic acid, maleic anhydride, acetic acid, trifluoroacetic acid, trifluoromethanesulfonic acid, phosphoric acid, acidic ion exchange resin, Various Lewis acids), basic catalysts (for example, nitrogen-containing compounds such as ammonia, primary amines, secondary amines, tertiary amines, pyridine; basic ion exchange resins; hydroxides such as sodium hydroxide; carbonic acid Carbonate such as potassium; carboxylate such as sodium acetate; various Lewis bases] or an alkoxide (for example, zirconium alkoxide, titanium alkoxide, aluminum alkoxide) is used in the presence of a catalyst.
- an acid catalyst for example, hydrochloric acid, sulfuric acid, nitric acid, formic acid, oxalic acid, maleic
- triethylamine can be used as the tertiary amine, and tetra-iso-propoxyaluminum can be used as the aluminum alkoxide.
- dibasic acids such as oxalic acid, maleic acid, and maleic anhydride, or anhydrides thereof are preferable.
- the amount of the catalyst used is from the viewpoint of promoting the hydrolysis condensation reaction, with respect to a total of 1 mol of the silane compound represented by the above formula (2) and the silane compound represented by the above formula (4) used as necessary.
- the amount is preferably 0.2 mol or less, more preferably 0.00001 to 0.1 mol.
- the reaction temperature and reaction time in the hydrolysis condensation can be appropriately selected depending on the type of the silane compound. For example, the following conditions can be adopted.
- the reaction temperature is preferably 40 to 200 ° C, more preferably 50 to 150 ° C.
- the reaction time is preferably 30 minutes to 24 hours, more preferably 1 to 12 hours.
- the hydrolysis / condensation reaction can be performed most efficiently.
- the reaction may be carried out in one step by adding a hydrolyzable silane compound, water and a catalyst to the reaction system at one time.
- the hydrolyzable silane compound, water and the catalyst may be The hydrolysis and condensation reaction may be performed in multiple stages by adding them into the reaction system in several times.
- water and produced alcohol can be removed from the reaction system by adding a dehydrating agent as necessary and subjecting to evaporation.
- the dehydrating agent adsorbs or includes excess water to completely eliminate the dehydrating ability, or is removed by evaporation.
- the component (B) has a weight average molecular weight (Mw) of preferably 500 to 10,000, more preferably 700 to 5,000.
- the ratio (Mw / Mn) between the weight average molecular weight (Mw) and the number average molecular weight (Mn) of the component (B) is preferably 1.0 to 5.0, more preferably 1.0 to 3. 0.
- Mw and Mn are respectively a weight average molecular weight and a number average molecular weight in terms of polystyrene measured by gel permeation chromatography (hereinafter abbreviated as GPC) (elution solvent: tetrahydrofuran).
- the component (B) can be used alone or in combination of two or more.
- the content of the component (B) is preferably 10 to 98% by mass, more preferably 10 to 95% by mass, and more preferably 10 to 95% by mass in the solid content of the infrared shielding composition from the viewpoint of improving curability and crack resistance. Preferably, it is 15 to 95% by mass.
- solid content is components other than the organic solvent mentioned later.
- the infrared shielding composition of the present invention may contain (C) a photosensitizer.
- the “photosensitive agent” refers to a compound having a property of changing the solubility in a solvent of a cured film obtained from an infrared shielding composition by light irradiation. Examples of such a compound include a photopolymerization initiator and a photoacid generator.
- (C) component can be used individually or in combination of 2 or more types.
- the photopolymerization initiator is not particularly limited as long as it can generate radicals by light.
- thioxanthone compounds thioxanthone compounds, acetophenone compounds, biimidazole compounds, triazine compounds, O-acyloxime compounds, benzoin compounds Compounds, benzophenone compounds, ⁇ -diketone compounds, polynuclear quinone compounds, diazo compounds, imide sulfonate compounds, and the like.
- a photoinitiator can be used individually or in combination of 2 or more types.
- the photopolymerization initiator is preferably at least one selected from the group consisting of biimidazole compounds, thioxanthone compounds, acetophenone compounds, triazine compounds, and O-acyloxime compounds.
- a hydrogen donor such as 2-mercaptobenzothiazole may be used in combination.
- the “hydrogen donor” as used herein means a compound that can donate a hydrogen atom to a radical generated from a biimidazole compound by exposure.
- a photopolymerization initiator other than a biimidazole compound is used, a sensitizer such as ethyl 4-dimethylaminobenzoate can be used in combination.
- the photoacid generator is not particularly limited as long as it is a compound that generates an acid by light, but onium salts such as sulfonium salts, benzothiazolium salts, ammonium salts, phosphonium salts, N-hydroxyimide sulfonate compounds, oxime sulfonates. O-nitrobenzyl sulfonate, quinonediazide compounds and the like.
- An acid generator can be used individually or in combination of 2 or more types. Of these, sulfonium salts, benzothiazolium salts, oxime sulfonates, and quinonediazide compounds are preferable.
- sulfonium salt and benzothiazolium salt include, for example, 4-acetoxyphenyldimethylsulfonium hexafluoroarsenate, 4-hydroxyphenyl benzyl methylsulfonium hexafluoroantimonate, 4-acetoxyphenyl benzyl methylsulfonium Hexafluoroantimonate, 4-hydroxyphenyldibenzylsulfonium hexafluoroantimonate, 4-acetoxyphenyldibenzylsulfonium hexafluoroantimonate, 3-benzylbenzothiazolium hexafluoroantimonate, 1- (4,7-dibutoxy- And 1-naphthalenyl) tetrahydrothiophenium trifluoromethanesulfonate.
- oxime sulfonate examples include compounds described in paragraphs [0122] to [0131] of JP-A No. 2014-115438.
- quinonediazide compound examples include, for example, compounds described in paragraphs [0040] to [0048] of JP-A-2008-156393, and paragraphs [0172] to [0186] of JP-A-2014-174406. A compound can be mentioned.
- the content of the component (C) is preferably 0.03 to 10% by mass, more preferably 0.1 to 8% by mass, and further preferably 0.5 to 6% by mass in the solid content of the infrared shielding composition. %.
- the infrared shielding composition of the present invention can contain (D) a polymerizable compound.
- polymerizable compound refers to a compound having two or more polymerizable groups. Examples of the polymerizable group include an ethylenically unsaturated group, an oxiranyl group, an oxetanyl group, and an N-alkoxymethylamino group.
- (D) component can be used individually or in mixture of 2 or more types. Among these, as the component (D), a compound having two or more (meth) acryloyl groups and a compound having two or more N-alkoxymethylamino groups are preferable.
- the compound having two or more (meth) acryloyl groups include polyfunctional (meth) acrylate, which is a reaction product of an aliphatic polyhydroxy compound and (meth) acrylic acid, and a polyfunctional (meta) modified with caprolactone.
- polyfunctional (meth) acrylate which is a reaction product of an aliphatic polyhydroxy compound and (meth) acrylic acid
- a polyfunctional (meta) modified with caprolactone )
- Acrylate alkylene oxide modified polyfunctional (meth) acrylate, polyfunctional urethane (meth) acrylate which is a reaction product of (meth) acrylate having hydroxyl group and polyfunctional isocyanate, (meth) acrylate having hydroxyl group and acid anhydride
- the polyfunctional (meth) acrylate which has a carboxyl group which is a reaction material with a thing can be mentioned.
- aliphatic polyhydroxy compound examples include divalent aliphatic polyhydroxy compounds such as ethylene glycol, propylene glycol, polyethylene glycol, and polypropylene glycol; trivalent or more valent compounds such as glycerin, trimethylolpropane, pentaerythritol, and dipentaerythritol. Mention may be made of aliphatic polyhydroxy compounds.
- Examples of the (meth) acrylate having a hydroxyl group include 2-hydroxyethyl (meth) acrylate, trimethylolpropane di (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol penta (meth) acrylate, and glycerol dimethacrylate.
- Examples of the polyfunctional isocyanate include tolylene diisocyanate, hexamethylene diisocyanate, diphenylmethylene diisocyanate, and isophorone diisocyanate.
- acid anhydrides examples include succinic anhydride, maleic anhydride, glutaric anhydride, itaconic anhydride, phthalic anhydride, dibasic acid anhydrides such as hexahydrophthalic anhydride, pyromellitic anhydride, biphenyltetracarboxylic acid.
- acid anhydrides include succinic anhydride, maleic anhydride, glutaric anhydride, itaconic anhydride, phthalic anhydride, dibasic acid anhydrides such as hexahydrophthalic anhydride, pyromellitic anhydride, biphenyltetracarboxylic acid.
- dianhydrides and tetrabasic acid dianhydrides such as benzophenone tetracarboxylic dianhydride.
- Examples of the caprolactone-modified polyfunctional (meth) acrylate include compounds described in paragraphs [0015] to [0018] of JP-A No. 11-44955.
- the polyfunctional (meth) acrylate modified with alkylene oxide is modified with at least one selected from bisphenol A di (meth) acrylate modified with at least one selected from ethylene oxide and propylene oxide, ethylene oxide and propylene oxide.
- Examples of the compound having two or more N-alkoxymethylamino groups include compounds having a melamine structure, a benzoguanamine structure, and a urea structure.
- the melamine structure and the benzoguanamine structure refer to a chemical structure having one or more triazine rings or phenyl-substituted triazine rings as a basic skeleton, and is a concept including melamine, benzoguanamine or a condensate thereof.
- Specific examples of the compound having two or more N-alkoxymethylamino groups include N, N, N ′, N ′, N ′′, N ′′ -hexa (alkoxymethyl) melamine, N, N, N ′. , N′-tetra (alkoxymethyl) benzoguanamine, N, N, N ′, N′-tetra (alkoxymethyl) glycoluril, and the like.
- polyfunctional (meth) acrylate which is a reaction product of trivalent or higher aliphatic polyhydroxy compound and (meth) acrylic acid, caprolactone-modified polyfunctional (meth) acrylate, polyfunctional urethane (Meth) acrylate, polyfunctional (meth) acrylate having a carboxyl group, N, N, N ′, N ′, N ′′, N ′′ -hexa (alkoxymethyl) melamine, N, N, N ′, N ′ -Tetra (alkoxymethyl) benzoguanamine is preferred.
- polyfunctional (meth) acrylates which are a reaction product of a trivalent or higher aliphatic polyhydroxy compound and (meth) acrylic acid
- trimethylolpropane triacrylate pentaerythritol triacrylate, dipentaerythritol pentaacrylate, dipenta Erythritol hexaacrylate is preferred
- polyfunctional (meth) acrylates having a carboxyl group a compound that is a reaction product of pentaerythritol triacrylate and succinic anhydride, a reaction product of dipentaerythritol pentaacrylate and succinic anhydride. Certain compounds are preferred.
- the content of the component (D) is preferably 0.1 to 90% by mass, more preferably 1 to 80% by mass, and still more preferably 2 to 70% by mass in the solid content of the infrared shielding composition.
- the infrared shielding composition of the present invention may contain (E) a binder resin (excluding the (B) siloxane polymer).
- the component (E) is preferably alkali-soluble, and examples thereof include resins having an acidic group.
- the acidic group include a carboxyl group, a phenolic hydroxyl group, and a sulfo group.
- the resin having an acidic group is not particularly limited as long as it is a polymer having one or more acidic groups in one molecule.
- a polymer having a carboxyl group hereinafter, “ For example, an ethylenically unsaturated monomer having one or more carboxyl groups (hereinafter also referred to as “unsaturated monomer (e1)”) and other.
- a copolymer with a copolymerizable ethylenically unsaturated monomer hereinafter also referred to as “unsaturated monomer (e2)”.
- a component can be used individually or in combination of 2 or more types.
- Examples of the unsaturated monomer (e1) include (meth) acrylic acid, maleic acid, maleic anhydride, succinic acid mono [2- (meth) acryloyloxyethyl], and ⁇ -carboxypolycaprolactone mono (meth). Examples thereof include acrylate and p-vinylbenzoic acid.
- An unsaturated monomer (e1) can be used individually or in combination of 2 or more types.
- an unsaturated monomer (e2) for example, N-substituted maleimides such as N-phenylmaleimide and N-cyclohexylmaleimide; aromatic vinyls such as styrene, ⁇ -methylstyrene, p-hydroxystyrene, p-hydroxy- ⁇ -methylstyrene, p-vinylbenzylglycidyl ether and acenaphthylene Compound;
- N-substituted maleimides such as N-phenylmaleimide and N-cyclohexylmaleimide
- aromatic vinyls such as styrene, ⁇ -methylstyrene, p-hydroxystyrene, p-hydroxy- ⁇ -methylstyrene, p-vinylbenzylglycidyl ether and acenaphthylene Compound
- Vinyl ethers such as cyclohexyl vinyl ether, isobornyl vinyl ether, tricyclo [5.2.1.0 2,6 ] decan-8-yl vinyl ether, pentacyclopentadecanyl vinyl ether, 3- (vinyloxymethyl) -3-ethyloxetane
- a macromonomer having a mono (meth) acryloyl group at the end of the polymer molecular chain such as polystyrene, polymethyl (meth) acrylate, poly-n-butyl (meth) acrylate, and polysiloxane.
- An unsaturated monomer (e2) can be used individually or in combination of 2 or more types.
- the copolymerization ratio of the unsaturated monomer (e1) in the copolymer is preferably 5 to 50% by mass. More preferably, it is 10 to 40% by mass.
- copolymer of the unsaturated monomer (e1) and the unsaturated monomer (e2) include, for example, JP-A-7-140654, JP-A-8-259876, and JP-A-10-31308. No. 10, JP-A-10-300902, JP-A-11-174224, JP-A-11-258415, JP-A-2000-56118, JP-A-2004-101728, etc. Coalescence can be mentioned.
- a carboxyl group-containing polymer having a polymerizable unsaturated bond such as a (meth) acryloyl group in the side chain can also be used.
- the component (E) in the present invention has a weight average molecular weight (Mw) of usually 1,000 to 100,000, preferably 3,000 to 50,000.
- the ratio (Mw / Mn) of the weight average molecular weight (Mw) and the number average molecular weight (Mn) of the component (E) is preferably 1.0 to 5.0, more preferably 1.0 to 3. 0.
- Mw and Mn are the polystyrene-reduced weight average molecular weight and number average molecular weight measured by GPC (elution solvent: tetrahydrofuran), respectively.
- the component (E) in the present invention can be produced by a known method.
- the component (E) is disclosed in JP-A-2003-222717, JP-A-2006-259680, WO2007 / 029871, etc.
- the structure, Mw, and Mw / Mn can also be controlled by the existing method.
- the content of the component (E) is preferably 1 to 40% by mass, more preferably 2 to 30% by mass, and further preferably 3 to 25% by mass in the solid content of the infrared shielding composition.
- the content of the component (E) with respect to 100 parts by mass of the (B) siloxane polymer is preferably 10 to 1000 parts by mass, more preferably 20 to 500 parts by mass, and still more preferably 30 to 200 parts by mass.
- the infrared shielding composition of the present invention contains the component (A) and the component (B), and other components optionally added, but is usually prepared as a liquid composition by blending an organic solvent. Is done.
- component (F) the component (A), component (B) and other components constituting the infrared shielding composition are dispersed or dissolved, and do not react with these components and have appropriate volatility. As long as it is, it can be appropriately selected and used.
- a component can be used individually or in combination of 2 or more types.
- Ethylene glycol monomethyl ether for example, Ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-n-propyl ether, ethylene glycol mono-n-butyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol mono-n-propyl ether, diethylene glycol mono-n- Butyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol mono-n-propyl ether, propylene glycol mono-n-butyl ether, dipropylene glycol monomethyl ether, di Propylene glycol mono Chirueteru, dipropylene glycol mono -n- propyl ether, dipropylene glycol mono -n- butyl ether, tripropylene glycol monomethyl
- Lactic acid alkyl esters such as methyl lactate and ethyl lactate; (Cyclo) alkyl alcohols such as methanol, ethanol, propanol, butanol, isopropanol, isobutanol, t-butanol, octanol, 2-ethylhexanol, cyclohexanol; Keto alcohols such as diacetone alcohol;
- Diacetates such as propylene glycol diacetate, 1,3-butylene glycol diacetate, 1,6-hexanediol diacetate; Alkoxycarboxylates such as methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl ethoxyacetate, 3-methyl-3-methoxybutylpropionate; Ethyl acetate, n-propyl acetate, i-propyl acetate, n-butyl acetate, i-butyl acetate, n-amyl formate, i-amyl acetate, n-butyl propionate, ethyl butyrate, n-propyl butyrate, i-butyric acid Fatty acid alkyl esters such as propyl, n-butyl butyrate, methyl pyr
- organic solvents (poly) alkylene glycol monoalkyl ether, lactate alkyl ester, (poly) alkylene glycol monoalkyl ether acetate, glycol ether, ketone, diacetate from the viewpoint of solubility, dispersibility, coatability, etc. , Alkoxycarboxylic acid esters and fatty acid alkyl esters are preferred.
- the content of the component (F) is not particularly limited, but is preferably such that the total concentration of each component excluding the organic solvent in the infrared shielding composition is 5 to 50% by mass.
- the amount of mass% is more preferable. By setting it as such an aspect, it can be set as the infrared shielding composition with favorable dispersibility, stability, and applicability
- the infrared shielding composition of the present invention can contain various additives as required.
- additives include fillers such as silica, alumina, and acrylic fine particles; polymer compounds such as polyvinyl alcohol and poly (fluoroalkyl acrylates); nonionic surfactants, fluorosurfactants, and silicones.
- Surfactants such as surfactants; vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (2-methoxyethoxy) silane, N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane, N- (2- Aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) Ethyltrimethoxysilane, 3-chloropropi Adhesion promoters such as methyldimethoxysilane, 3-chloropropyltrimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane; 2,2-thiobis
- the infrared shielding composition of the present invention can be prepared by an appropriate method.
- the component (A) and the component (B) can be optionally added in an organic solvent (F). It can prepare by mixing with the component of.
- the cured film of the present invention is formed using the infrared shielding composition of the present invention, and therefore has a light shielding property (infrared shielding) in the infrared region (including the near-infrared region near the wavelength of 700 nm). Property) and excellent crack resistance. Therefore, the cured film of the present invention can be suitably used as an infrared shielding cured film, for example, an infrared cut filter.
- the cured film of the present invention has a minimum light transmittance of 90% or more in a wavelength band of 500 to 600 nm and a light transmittance of 40% or less at a wavelength of 850 nm at a film thickness of 0.5 ⁇ m. It is preferable to have characteristics.
- visible light is sufficiently transmitted even on the low wavelength side of the visible region, and light in the infrared region can be sufficiently shielded. Therefore, transmission of light in the visible region and shielding of light in the infrared region can be achieved at a high level.
- the minimum transmittance of light in the wavelength band of 500 to 600 nm is preferably 92% or more, more preferably 95% or more, and the transmittance of light at a wavelength of 850 nm is preferably 35% or less, and 30% or less. Is more preferable.
- the minimum transmittance of light in a wavelength band of 500 to 600 nm refers to the minimum value of the transmittance of light at a wavelength of 500 to 600 nm in a transmission spectrum measured by a spectrophotometer.
- the transmittance of light at a wavelength of 850 nm is 40% or less” means that the transmittance of light at a wavelength of 850 nm shows a value of 40% or less in a transmission spectrum measured by a spectrophotometer.
- the cured film of the present invention can be formed by an appropriate method.
- the cured film can be formed by a process including the following steps (1) and (2) using the infrared shielding composition of the present invention. it can.
- Step (1) is a step in which the infrared shielding composition of the present invention is applied on a substrate and dried to form a coating film. It does not specifically limit as a board
- the material for the resin include polycarbonate, polyester, aromatic polyamide, polyamideimide, polyimide, and cycloolefin polymer.
- the substrate may be subjected to appropriate pretreatment such as chemical treatment with a silane coupling agent or the like, plasma treatment, ion plating, sputtering, gas phase reaction method, vacuum deposition, etc., if desired.
- the infrared shielding composition of this invention when applying the infrared shielding composition of this invention to the solid-state imaging device mentioned later, you may apply
- a visible light pass filter color filter
- a photodiode By applying the infrared shielding composition of the present invention to the light-receiving surface of a light-receiving element such as a visible light pass filter (color filter) or a photodiode, the infrared rays incident on the photodiode can be effectively blocked. preferable.
- the application method of the infrared shielding composition is not particularly limited.
- an appropriate method such as a spray method, a roll coating method, a spin coating method (spin coating method), a slit die coating method, a bar coating method, or the like may be adopted. Can do. Of these, the spin coating method is particularly preferable.
- heat treatment can be performed if necessary.
- the heat treatment can be performed using a known heating means such as an oven or a hot plate, and may be performed by combining reduced-pressure drying and heat drying.
- the heating conditions vary depending on the type of each component, the blending ratio, and the like, but can be, for example, about 30 seconds to 15 minutes at a temperature of 60 to 250 ° C.
- the film thickness of the coated film after drying is usually 0.1 to 30 ⁇ m, preferably 0.2 to 10 ⁇ m, more preferably 0.3 to 5 ⁇ m.
- -Step (2)- Step (2) is a step of curing the coating film formed in step (1).
- the curing treatment is not particularly limited and can be appropriately selected depending on the purpose. Examples thereof include exposure treatment and heat treatment.
- exposure in this specification is a concept including not only light of various wavelengths but also irradiation of radiation such as electron beams and X-rays.
- Examples of the exposure processing method include a method of exposing part or all of the formed coating film surface.
- the exposure is preferably performed by irradiation of radiation, and examples of the radiation include ultraviolet rays and visible light such as electron beams, KrF, ArF, g-rays, h-rays, i-rays, and among others, KrF, g-rays, h-rays. , I-line is preferred.
- Examples of the exposure method include stepper exposure and aligner exposure. Exposure is preferably 5 ⁇ 3000mJ / cm 2, more preferably 10 ⁇ 2000mJ / cm 2, more preferably 50 ⁇ 1000mJ / cm 2.
- the exposure apparatus is not particularly limited, and a known apparatus can be appropriately selected. Examples thereof include a UV exposure machine such as an ultrahigh pressure mercury lamp.
- the heating temperature is preferably 120 to 250 ° C, more preferably 160 to 230 ° C.
- the heating time is preferably 3 minutes to 180 minutes, more preferably 5 minutes to 120 minutes.
- a heating apparatus Although a well-known apparatus can be selected suitably, For example, a dry oven, a hotplate, IR heater, etc. are mentioned.
- the thickness of the cured film thus formed is preferably 0.1 to 10 ⁇ m, more preferably 0.3 to 5 ⁇ m, and still more preferably 0.5 to 3 ⁇ m.
- step (3) a step of removing a part of the cured film obtained in the step (2) or a part of the coating film obtained in the step (1) (hereinafter also referred to as “step (3)”). ) May be included.
- step (3) in the first embodiment of the present invention described later, an opening can be provided in a portion corresponding to the infrared light detection pixel.
- an etching method an alkali development method, a solvent development method and the like.
- a photoresist layer is formed on the cured film obtained in the step (2), the photoresist layer is removed in a pattern to form a resist pattern, and this resist pattern is used as an etching mask by dry etching.
- etching and removing the resist pattern remaining after the etching a part of the cured film obtained in the step (2) can be removed.
- Japanese Patent Application Laid-Open No. 2008-241744 can be referred to, and the contents thereof are incorporated in the present specification.
- the coating film obtained in step (1) is exposed through a photomask and then developed using an alkali developer to dissolve and remove unexposed portions of the coating film. Part of the coating film obtained in (1) can be removed. Post-baking can also be performed after alkali development.
- alkaline developer include sodium carbonate, sodium bicarbonate, sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, choline, 1,8-diazabicyclo- [5.4.0] -7-undecene, , 5-diazabicyclo- [4.3.0] -5-nonene and the like are preferable.
- a water-soluble organic solvent such as methanol or ethanol, a surfactant, or the like
- a surfactant such as methanol or ethanol
- it is usually washed with water after alkali development.
- a development processing method a shower development method, a spray development method, a dip (immersion) development method, a paddle (liquid accumulation) development method, or the like can be applied.
- the development conditions are preferably 5 to 300 seconds at room temperature.
- the cured film of the present invention can be formed.
- Solid-state imaging device of the present invention includes the cured film of the present invention, and the solid-state imaging device of the present invention can take an appropriate structure.
- a cured film is formed on a semiconductor substrate such as a CMOS substrate by the same operation as described above, so that the detection accuracy of visible light in particular is increased. Can be manufactured.
- a solid-state imaging device according to an embodiment of the present invention will be described in detail with reference to the drawings. The following embodiment is an example of the embodiment of the present invention, and the present invention is not limited to the embodiment described here.
- up refers to a relative position with respect to the main surface of the support substrate (surface on which the solid-state imaging device is disposed), and the direction away from the main surface of the support substrate is “up”. It is.
- the upper side toward the paper surface is “upper”.
- “upper” includes a case where it is in contact with an object (that is, “on”) and a case where it is located above the object (that is, “over”).
- “down” refers to a relative position with respect to the main surface of the support substrate, and the direction approaching the main surface of the support substrate is “down”.
- the lower side is “down” toward the paper surface.
- FIG. 1 is an application example of a solid-state imaging device according to an embodiment of the present invention. Specifically, an example in which the solid-state imaging device of the present embodiment is applied to a TOF (Time Of Flight) imaging device (for example, a distance image camera) is shown. Note that the imaging apparatus described here is only a schematic diagram and does not prevent other elements from being added or deleted.
- TOF Time Of Flight
- an imaging device (camera) 10 includes a light source 11, a solid-state imaging device (image sensor) 12, a signal processing unit 13, and a main control unit 14 as basic components.
- the main control unit 14 is connected to the light source 11, the solid-state imaging device 12, and the signal processing unit 13, and plays a role of controlling each operation.
- the solid-state imaging device 12 is further connected to a signal processing unit 13 and transmits an electrical signal generated by the solid-state imaging device 12 to the signal processing unit 13.
- the light source 11 As the light source 11, a known LED (Light Emitting Diode) that outputs infrared light can be used.
- the infrared light output from the light source 11 strikes the imaging object 15 and is reflected, and the reflected light enters the solid-state imaging device 12. At this time, a phase difference corresponding to the three-dimensional shape of the imaging object 15 is generated between the infrared light output from the light source 11 and the infrared light returned from the imaging object 15.
- LED Light Emitting Diode
- CMOS image sensor As the solid-state imaging device 12, a CMOS image sensor or a CCD image sensor can be used.
- CMOS image sensor either a front-illuminated type or a back-illuminated type can be used, but in the present embodiment, a highly sensitive back-illuminated CMOS image sensor is used.
- Solid-state imaging element also referred to as a photoelectric conversion element or a sensor element
- External visible light reflected by the imaging object 15 and infrared light output from the light source 11 are incident on a solid-state imaging element (also referred to as a photoelectric conversion element or a sensor element) in the solid-state imaging device 12 and correspond to the amount of light. It is converted into an electrical signal.
- the converted electrical signal is digitized by an AD conversion circuit provided in the solid-state imaging device 12 and output to the signal processing unit 13 as a digital signal.
- AD conversion circuit provided in the solid-state imaging device 12 and output to the signal processing unit 13 as a digital signal.
- the signal processing unit 13 receives the digital signal output from the solid-state imaging device 12 and performs signal processing to form an image based on the imaging target 15. At that time, the digital signal based on the visible light is used as information for reproducing the color and shape of the imaging object 15, and the digital signal based on the infrared light is used as information for recognizing the distance to the imaging object 15. Used. With these digital signals, the imaging object 15 can be grasped in three dimensions.
- the main control unit 14 is an arithmetic processing unit centering on the CPU, and controls the light source 11, the solid-state imaging device 12, and the signal processing unit 13, and is based on information obtained from the signal processing unit 13 and others not shown.
- the processing unit is also controlled.
- FIG. 2 is a plan view for explaining the outline of the solid-state imaging device 12.
- a pixel portion 17 and a terminal portion 18 are arranged.
- An AD conversion circuit may be provided between the pixel portion 17 and the terminal portion 18.
- the enlargement unit 19 shows a state in which a part of the pixel unit 17 is enlarged. As shown in the enlarged portion 19, a plurality of pixels 20 are arranged in a matrix in the pixel portion 17.
- FIG. 2 shows only a simple structure such as the pixel portion 17 and the terminal portion 18, but the solid-state imaging device of the present embodiment is not limited to this.
- the function as the signal processing unit 13 shown in FIG. 1 can be incorporated in the solid-state imaging device 12 shown in FIG.
- it may be a system IC circuit that incorporates an arithmetic processing capability equivalent to that of the main control unit 14 shown in FIG.
- FIG. 3 is a cross-sectional view of the pixel 20 shown in FIG. 2 taken along III-III ′.
- Color filters) 27a to 27c, an infrared light pass filter 27d, an insulator 28, photodiodes 29a to 29d, and a support substrate 30 are illustrated.
- the first gap 22, the second gap 24, and the third gap 26 may be secured as a space filled with air or an inert gas, or secured as an insulator composed of an organic insulating film or an inorganic insulating film. May be.
- first gap 22, the second gap 24, or the third gap 26 may be omitted.
- the second optical layer 25 may be in contact with the visible light pass filters 27a to 27c, or the microlens array 23 may be in contact with the microlens array 23.
- the second optical layer 25 may be in contact.
- a pixel composed of the visible light pass filters 27a to 27c and the photodiodes 29a to 29c arranged corresponding thereto is referred to as a “visible light detection pixel”, and the infrared light pass filter 27d and A pixel constituted by the photodiode 29d is referred to as an “infrared light detection pixel”.
- the first optical layer 21 is an optical layer that transmits at least part of visible light and infrared light.
- visible light having a wavelength of 400 to 700 nm and at least part of a wavelength of 750 to 2500 nm (typically 750 to 950 nm).
- the transmitted wavelength range is not limited to the range described here, and can be detected by visible light corresponding to R (red), G (green), and B (blue) light and an infrared light detection pixel described later. What is necessary is just to be able to transmit infrared light in a wide wavelength range.
- Such a filter having an optical characteristic that transmits two different wavelength ranges is generally called a two-wavelength bandpass filter.
- an optical layer in which a dielectric multilayer film is provided on a base material having a transparent resin (translucent resin) layer containing a compound having specific optical characteristics is used as the first optical layer 21.
- the compound having specific optical characteristics include a compound that absorbs part of infrared light (hereinafter referred to as “compound (Z)”).
- examples of the compound (Z) include the same compounds as the component (A) contained in the infrared shielding composition of the present invention.
- a squarylium compound, a phthalocyanine compound, a naphthalocyanine compound, At least one compound selected from the group consisting of a croconium compound, a hexaphyrin compound and a cyanine compound can be preferably used.
- the substrate may be a single layer or a multilayer. If it is a single layer, it can be set as the flexible base material comprised with a transparent resin layer.
- a base material in which a transparent resin layer containing a compound (Z) and a curable resin is laminated on a transparent substrate such as a glass substrate or a resin substrate, or a curable material on a transparent substrate containing a compound (Z)
- a substrate on which a resin layer such as an overcoat layer containing a resin is laminated can be used.
- the position of each microlens corresponds to the position of each pixel, and the incident light collected by each microlens corresponds to each corresponding pixel (specifically, each photodiode). Is received.
- the microlens array 23 can be formed using a resin material, it can also be formed on-chip.
- the microlens array 23 may be formed by using an insulator as the second gap 24 and processing a resin material applied thereon.
- the second gap 24 is made of a base material (film) made of resin, the resin material applied thereon is processed to form the microlens array 23, and then the base material is pasted to form a solid image. It may be incorporated in the element 12.
- the second optical layer 25 is an optical layer that absorbs at least part of infrared light, and can be suitably manufactured using the infrared shielding composition of the present invention. Specifically, by including an infrared shielding agent having a maximum absorption wavelength in the wavelength range of 700 to 2000 nm, it can function as an infrared light cut filter that shields at least part of infrared light.
- the first optical layer 21 has a dielectric on a substrate having a transparent resin (translucent resin) layer containing a compound having specific optical characteristics. It is an optical layer (two-wavelength bandpass filter) provided with a multilayer film, and the second optical layer 25 is preferably a cured film formed using the infrared shielding composition of the present invention.
- the second optical layer 25 has an opening in a portion corresponding to the infrared light detection pixel (specifically, the photodiode 29d).
- an opening is provided above the photodiode 29d so that the infrared light can reach the photodiode 29d as it is, so that the infrared light is not prevented from entering.
- the “portion corresponding to the photodiode 29d” in the second optical layer 25 is a portion above the photodiode 29d, that is, a portion where the optical path of the infrared light toward the photodiode 29d intersects the second optical layer 25. Point to.
- the opening can be formed by, for example, the above-described etching method or alkali development method.
- the infrared shielding composition of the present invention is particularly suitable for forming the second optical layer 25 in the first embodiment because the opening can be formed by etching or alkali development.
- the second optical layer 25 is disposed so as to cover the portion other than the infrared light detection pixel (that is, the visible light detection pixel). Thereby, it can suppress as much as possible that infrared light reaches
- a pixel group including the above-described visible light detection pixels and infrared light detection pixels is disposed below the second optical layer 25, a pixel group including the above-described visible light detection pixels and infrared light detection pixels is disposed.
- the photodiodes 29a to 29c and the visible light pass filters 27a to 27c correspond to each other to form a visible light detection pixel.
- the photodiode 29d and the infrared light pass filter 27d correspond to each other to form an infrared light detection pixel.
- the photodiodes 29a to 29c are referred to as “first light receiving elements”, and the photodiode 29d is referred to as a “second light receiving element”.
- the visible light pass filters 27a to 27c are constituted by pass filters that transmit visible light having different wavelengths.
- the visible light pass filter may include a pass filter 27a that transmits green light, a pass filter 27b that transmits red light, and a pass filter 27c that transmits blue light. Therefore, the pixels corresponding to these individual colors may be called green light detection pixels, red light detection pixels, and blue light detection pixels, respectively.
- the visible light pass filters 27a to 27c and the infrared light pass filter 27d can be made of a known resin material containing a coloring matter (pigment or dye) having absorption at a specific wavelength.
- the infrared light pass filter 27d can be formed using a curable composition containing a dye having absorption in the visible light wavelength range and a curable component.
- One or more dyes having absorption in the visible light wavelength region may be contained, but a plurality of dyes may be combined.
- an infrared light pass filter can be formed using the photosensitive composition described in JP-A-2014-130332.
- the photodiodes 29a to 29d described above can be formed using a silicon substrate as the support substrate 30 and using a known semiconductor process on the surface of the silicon substrate.
- a silicon substrate as the support substrate 30
- a known semiconductor process on the surface of the silicon substrate.
- the photodiode 29a is used as a light receiving element for receiving green light having a wavelength of 520 to 560 nm
- the photodiode 29b is used as a light receiving element for receiving red light having a wavelength of 580 to 620 nm
- the photodiode 29c is used. Is used as a light receiving element for receiving blue light having a wavelength of 430 to 470 nm.
- visible light incident from the outside is detected using these photodiodes 29a to 29c.
- the photodiode 29d functions as a light receiving element for receiving infrared light having a wavelength of 750 to 2500 nm (typically, a wavelength of 750 to 950 nm).
- the photodiode 29d detects infrared light incident from the outside. Is done.
- FIGS. 1-10 the optical characteristics of the first optical layer 21, the second optical layer 25, and the infrared light pass filter 27d used in the solid-state imaging device 12 of the present embodiment are shown in FIGS.
- FIG. 4 is a diagram showing a transmission spectrum of the first optical layer 21 used in the solid-state imaging device 12 of the present embodiment.
- the horizontal axis represents the wavelength of incident light
- the vertical axis represents the transmittance when measured from the direction perpendicular to the first optical layer 21.
- the first optical layer 21 used in this embodiment has optical characteristics that transmit visible light having a wavelength of 400 to 700 nm and infrared light having a wavelength of 750 to 950 nm.
- the optical characteristics shown in FIG. 4 are merely examples, and the first optical layer 21 used in the present embodiment has other optical characteristics as long as it has optical characteristics that transmit at least part of visible light and infrared light. Even a two-wavelength bandpass filter that transmits the wavelength band can be used.
- FIG. 5 is a diagram showing a transmission spectrum of the second optical layer (infrared cut filter) 25 used in the solid-state imaging device 12 of the present embodiment.
- the horizontal axis indicates the wavelength of incident light
- the vertical axis indicates the transmittance when measured from the direction perpendicular to the second optical layer 25.
- FIG. 5 shows two types of the second optical layer (A) and the second optical layer (B), but the difference in transmission spectrum between the two is due to the difference in the contained (A) infrared shielding agent. It is.
- the second optical layer (A) contains a cyanine compound having a maximum absorption maximum wavelength of 865 nm as the component (A), and the second optical layer (B) has the component (A) as It contains a cyanine compound having a maximum absorption maximum wavelength of 865 nm and a cyanine compound having the same wavelength of 810 nm.
- the infrared cut filter 25 used in this embodiment has a function of cutting incident light having a wavelength of approximately 600 to 950 nm, preferably approximately 700 to 900 nm.
- the optical characteristics shown in FIG. 5 are merely examples, and as the second optical layer 25 used in the present embodiment, an optical layer containing an infrared shielding agent having an absorption maximum at a wavelength of 700 to 2000 nm may be used.
- FIG. 6 is a diagram showing a transmission spectrum of the infrared light pass filter 27d used in the solid-state imaging device 12 of the present embodiment.
- the horizontal axis represents the wavelength of incident light
- the vertical axis represents the transmittance when measured from the direction perpendicular to the infrared light pass filter 27d.
- the infrared light pass filter 27d used in this embodiment exhibits a characteristic of transmitting light having a wavelength longer than that near the wavelength of 800 nm.
- the infrared light pass filter 27d that can be used in this embodiment is not limited to the one having the transmission spectrum characteristics shown in FIG. 6, and the absorption edge may be on the longer wavelength side or the shorter wavelength side.
- first, external light is filtered by the first optical layer 21 having the optical characteristics shown in FIG. 4, and visible light having a wavelength of 400 to 700 nm and infrared light having a wavelength of 750 to 2500 nm. Transmits at least part of the light (specifically, infrared light having a wavelength of 750 to 950 nm). A part of visible light and infrared light transmitted through the first optical layer 21 is incident on the second optical layer 25.
- the opening is provided in the second optical layer 25 above the photodiode 29d, a part of visible light and infrared light transmitted through the first optical layer 21 is directly used as an infrared light path filter. It is incident on 27d.
- the infrared light pass filter 27d as shown in FIG. 6, visible light having a wavelength of approximately 750 nm or less is absorbed (cut), and infrared light having a wavelength of 750 to 950 nm is incident on the photodiode 29d.
- the second optical layer 25 is provided above the photodiodes 29a to 29c (above the visible light pass filters 27a to 27c), visible light and infrared light transmitted through the first optical layer 21 are provided. A part of the light enters the second optical layer 25.
- infrared light having a wavelength of approximately 800 to 900 nm is absorbed (cut), and visible light including RGB component light passes through visible light path filters 27a to 27c. Then, it enters the photodiodes 29a to 29c.
- the amount of infrared light incident on the photodiodes 29a to 29c can be greatly reduced, so that the chromaticity of the imaged object 15 can be accurately detected without being affected by noise caused by the infrared light. It is possible to grasp the shape.
- the infrared light finally incident on the visible light detection pixel by appropriately adjusting the optical characteristics of the first optical layer 21 and the second optical layer 25. It is characterized in that it suppresses.
- the infrared light transmitted through the first optical layer 21 is incident on the visible light detection pixels as they are, so that the color reproducibility may be deteriorated.
- a red color filter has an optical characteristic of transmitting light having a wavelength of 600 nm or more, so that infrared light is incident on a red light detection pixel.
- the green color filter and the blue color filter have optical characteristics in which the transmittance gradually increases from around the wavelength of 750 nm, so that infrared light is also detected by the green light detection pixel and the blue light detection. It will enter into the pixel for use.
- FIG. 8 is a schematic cross-sectional view of the solid-state imaging device according to the second embodiment, in which the pixel 20 shown in FIG. 2 is cut along III-III ′.
- the solid-state imaging device according to the second embodiment has the same basic configuration as the solid-state imaging device according to the first embodiment, but differs from the solid-state imaging device according to the first embodiment in the following points. That is, in the solid-state imaging device according to the second embodiment, the first optical layer 21, the photodiode 29d, and the infrared light pass filter 27d are not present, and the second optical layer 25 is installed below the microlens array 23.
- the second optical layer 25 absorbs at least a part of infrared light, and detects the transmitted light transmitted through the second optical layer 25. It is a solid-state imaging device provided with a light receiving element, and the second optical layer is formed of a cured film formed using the infrared shielding composition of the present invention.
- the first light receiving element refers to the photodiodes 29a to 29c provided below the visible light pass filters 27a to 27c, and the second optical layer is disposed above the photodiodes.
- the visible light pass filters 27a to 27c may include a pass filter that transmits green light, a pass filter that transmits red light, and a pass filter that transmits blue light.
- the visible light is incident on the photodiodes 29a to 29c.
- the amount of light can be greatly reduced.
- FIG. 9 is a schematic cross-sectional view of the solid-state imaging device according to the third embodiment, in which the pixel 20 shown in FIG. 2 is cut along III-III ′.
- the solid-state imaging device according to the third embodiment has the same basic configuration as the solid-state imaging device according to the second embodiment, but differs from the solid-state imaging device according to the second embodiment in the following points. That is, the solid-state imaging device according to the third embodiment is different from the solid-state imaging device according to the second embodiment in that the second optical layer 25 is installed above the microlens array 23.
- the second optical layer 25 is provided above the visible light detection pixels, visible light is incident on the photodiodes 29a to 29c. The amount of light can be greatly reduced.
- the solid-state imaging devices according to the first, second, and third embodiments can significantly reduce the amount of infrared light incident on the first light receiving element, the influence of noise or the like caused by the infrared light. It is possible to accurately grasp the distance from the imaged object without receiving the image. Therefore, remote control devices such as TV remote controls and automatic doors, three-dimensional shape measuring devices, in-vehicle devices such as automobile inter-vehicle distance detection sensors, distance image sensors used in gesture input controllers, image sensors in facsimiles and copiers, etc. It is suitable for an appropriate optical sensor such as a color sensor or an infrared detection element used for color monitoring of a liquid crystal display or simple color detection. It is also suitable for a color recognition sensor such as a camera.
- Synthesis example 1 10.00 g of maleic anhydride was dissolved by heating in 90.00 g of propylene glycol monomethyl ether (hereinafter also referred to as “PGME”) to prepare a 10% maleic anhydride PGME solution. Subsequently, 1.8 g of a 10% maleic anhydride PGME solution and 72.41 g of water were mixed to prepare an acid catalyst solution. Subsequently, 182.66 g of methyltrimethoxysilane and 43.13 g of PGME were added to the flask, and a dropping funnel containing a cooling tube and an acid catalyst solution prepared in advance was set.
- PGME propylene glycol monomethyl ether
- the siloxane polymer (B-1) had Mw of 2,480, Mn of 1,200, and Mw / Mn of 2.1.
- Synthesis example 2 In Synthesis Example 1, an acid catalyst solution in which 1.80 g of a 10% maleic anhydride PGME solution and 69.21 g of water were mixed, 165.86 g of methyltrimethoxysilane as a silane compound, 12.71 g of phenyltrimethoxylane, and a solvent A siloxane polymer (B-2) solution having a solid content concentration of 35% by mass was obtained in the same manner as in Synthesis Example 1 except that PGME was changed to 50.43 g.
- Synthesis example 3 In Synthesis Example 1, an acid catalyst solution in which 1.80 g of a 10% maleic anhydride PGME solution and 63.59 g of water were mixed, 136.35 g of methyltrimethoxysilane as a silane compound, 35.03 g of phenyltrimethoxylane, and a solvent A siloxane polymer (B-3) solution having a solid concentration of 35% by mass was obtained in the same manner as in Synthesis Example 1 except that PGME was changed to 63.23 g.
- Synthesis example 4 In Synthesis Example 1, an acid catalyst solution in which 1.80 g of a 10% maleic anhydride PGME solution and 58.81 g of water were mixed, 111.27 g of methyltrimethoxysilane as a silane compound, 53.99 g of phenyltrimethoxylane, A siloxane polymer (B-4) solution having a solid content concentration of 35% by mass was obtained in the same manner as in Synthesis Example 1 except that PGME was changed to 74.13 g.
- Synthesis example 5 In Synthesis Example 1, an acid catalyst solution in which 1.80 g of a 10% maleic anhydride PGME solution and 49.51 g of water were mixed, 62.45 g of methyltrimethoxysilane as a silane compound, 90.91 g of phenyltrimethoxylane, A siloxane polymer (B-5) solution having a solid concentration of 35% by mass was obtained in the same manner as in Synthesis Example 1 except that 95.32 g of PGME was used and the reaction temperature was changed so that the inside of the container was Reflux.
- Synthesis Example 6 In Synthesis Example 1, an acid catalyst solution in which 1.80 g of a 10% maleic anhydride PGME solution and 43.95 g of water were mixed, 33.26 g of methyltrimethoxysilane as a silane compound, 112.98 g of phenyltrimethoxylane, A siloxane polymer (B-6) solution having a solid content concentration of 35% by mass was obtained in the same manner as in Synthesis Example 1 except that certain PGME was changed to 108.00 g.
- Synthesis example 7 In Synthesis Example 5, 1.80 g of a 10% maleic anhydride PGME solution, an acid catalyst solution in which 37.62 g of water were mixed, 138.14 g of phenyltrimethoxylane as a silane compound, and PGME as a solvent were changed to 122.44 g.
- a siloxane polymer (B-7) solution having a solid content concentration of 35% by mass was obtained in the same manner as in Synthesis Example 5 except that.
- Synthesis Example 8 In Synthesis Example 1, an acid catalyst solution obtained by mixing 1.80 g of a 10% maleic anhydride PGME solution and 40.37 g of water, 30.55 g of methyltrimethoxysilane as a silane compound, 111.11 g of tolyltrimethoxylane, and a solvent A siloxane polymer (B-8) solution having a solid content concentration of 35% by mass was obtained in the same manner as in Synthesis Example 1 except that a certain amount of PGME was changed to 116.17 g.
- Synthesis Example 9 In Synthesis Example 1, an acid catalyst solution in which 1.80 g of a 10% maleic anhydride PGME solution and 43.95 g of water were mixed, 27.72 g of methyltrimethoxysilane as a silane compound, 3-methacryloxypropyltrimethoxysilane (product) Name Silaace S710, manufactured by Chisso Corporation) 10.11 g, phenyltrimethoxylane 112.98 g, and the solvent PGME was changed to 108.00 g, in the same manner as in Synthesis Example 1, with a solid content concentration of 35% by mass. A siloxane polymer (B-9) solution was obtained.
- MTMS is methyltrimethoxysilane
- S710 is 3-methacryloxypropyltrimethoxysilane (trade name Silaace S710, manufactured by Chisso Corporation)
- PTMS is phenyltrimethoxysilane
- TTMS is tolyltrimethoxysilane. Respectively.
- binder resin (E-1) This binder resin is referred to as “binder resin (E-1)”.
- Example 1 NK-5060 (produced by Hayashibara Co., Ltd., maximum absorption wavelength 865 nm (film)) as a component (A) is 2.53 parts by mass, and a siloxane polymer (B-2) solution (solid content) as component (B) 100.00 parts by mass (concentration: 35% by mass), and (C) 1.63 parts by mass of 1- (4,7-dibutoxy-1-naphthalenyl) tetrahydrothiophenium trifluoromethanesulfonate as an acid generator as a photosensitizer.
- the base film forming composition was applied by spin coating, and then 250 ° C. Was baked for 2 minutes to form a base film having a thickness of 0.6 ⁇ m.
- An infrared shielding composition (S-1) was applied onto the undercoat film by spin coating, and then prebaked for 2 minutes on a hot plate at 100 ° C. to form a coating film having a thickness of 0.5 ⁇ m. Then, the glass substrate which has a cured film was produced by performing post-baking for 5 minutes with a 200 degreeC hotplate.
- Examples 2-8 Infrared shielding compositions (S-2) to (S-8) were prepared in the same manner as in Example 1, except that the siloxane polymers were changed to (B-3) to (B-9) in Example 1.
- the cured film was formed and evaluated. The results are shown in Table 2.
- the transmission spectrum of the cured film obtained in Example 5 is shown in FIG.
- FIG. 7 is a comparison with a substrate in which only a base film is formed on a glass substrate.
- Comparative Example 1 An infrared shielding composition (S-9) was prepared in the same manner as in Example 1 except that the siloxane polymer was changed to (B-1) in Example 1, and a cured film was formed and evaluated. The results are shown in Table 2.
- A-1 is NK-5060 (manufactured by Hayashibara Co., Ltd., maximum absorption wavelength 865 nm (film)).
- Example 9 In Example 1, 50 parts by mass of the siloxane polymer (B-2) solution (solid content concentration 35% by mass) was used instead of 100.00 parts by mass of the siloxane polymer (B-2) solution (solid content concentration 35% by mass). Further, an infrared shielding composition (S-10) was prepared in the same manner as in Example 1 except that 50 parts by mass of the binder resin (E-1) solution (solid content concentration: 33% by mass) was added as the component (E). Then, a cured film was formed and evaluated. The results are shown in Table 3.
- Examples 10 to 16 Infrared shielding compositions (S-11) to (S-17) were prepared in the same manner as in Example 9, except that the types of siloxane polymers in Examples 9 were changed to (B-3) to (B-9). The cured film was formed and evaluated. The results are shown in Table 3.
- Example 9 Comparative Example 2 In Example 9, except that the type of siloxane polymer was (B-1), an infrared shielding composition (S-18) was prepared in the same manner as in Example 9, and the cured film was formed and evaluated. . The results are shown in Table 3.
- Example 17-33 infrared shielding compositions (S-19) to (S-35) were prepared in the same manner as in Example 4 except that component (A) shown in Table 4 was used instead of NK-5060. The cured film was formed and evaluated. The results are shown in Table 4. In Examples 25 to 33, two types of component (A) were mixed at a mass ratio shown in Table 4 and used.
- Example 34 infrared shielding compositions (S-36) to (S-47) were prepared in the same manner as in Example 12 except that the component (A) shown in Table 4 was used instead of NK-5060. The cured film was formed and evaluated. The results are shown in Table 4. In Examples 39 to 45, two types of component (A) were mixed at a mass ratio shown in Table 4 and used.
- A-1 to “A-9” are as follows.
- A-1 NK-5060 (produced by Hayashibara Co., Ltd. Cyanine compound. Maximum absorption wavelength 865 nm (film))
- A-2 Excolor TX-EX 708K (manufactured by Nippon Shokubai Co., Ltd., phthalocyanine compound, maximum absorption wavelength 755 nm (film))
- A-3 Phthalocyanine compound synthesized according to Example 1 of Japanese Patent No. 5046515 (maximum absorption wavelength 990 nm (film))
- A-4 Lumogen IR765 (manufactured by BASF. Quaterylene compound.
- Example 46 After applying the undercoat film forming composition on two glass substrates by spin coating using an automatic coating and developing apparatus (clean track manufactured by Tokyo Electron Ltd., trade name “MARK-Vz”). The substrate was baked at 250 ° C. for 2 minutes to form a base film having a thickness of 0.6 ⁇ m. On the first substrate, the infrared shielding composition (S-13) obtained in Example 12 was applied by spin coating on the base film, and then pre-baked for 2 minutes on a hot plate at 100 ° C. Was performed to form a coating film having a thickness of 0.5 ⁇ m.
- an automatic coating and developing apparatus clean track manufactured by Tokyo Electron Ltd., trade name “MARK-Vz”.
- the substrate was baked at 250 ° C. for 2 minutes to form a base film having a thickness of 0.6 ⁇ m.
- the infrared shielding composition (S-13) obtained in Example 12 was applied by spin coating on the base film, and then pre-baked for 2 minutes on a hot plate at 100 ° C. Was
- the coating film was exposed at an exposure amount of 1,000 J / m 2 without using a photomask, using an exposure machine (Canon “MPA-600FA” (ghi line mixing)).
- post-baking was performed on a hot plate at 200 ° C. for 5 minutes to produce a substrate having a cured film.
- the crack resistance was “ ⁇ ”
- the haze was “ ⁇ ”.
- the infrared ray shielding composition (S-13) obtained in Example 12 was applied to the second substrate by spin coating on the base film, and then pre-baked for 2 minutes on a hot plate at 100 ° C. Was performed to form a coating film having a thickness of 0.5 ⁇ m.
- a film having a pattern of 60 ⁇ m line and space (10 to 1) is applied to the coating film 1
- the exposure was performed at an exposure amount of 000 J / m 2 .
- it developed by the piling method for 80 seconds at 23 degreeC using the 2.38 mass% tetramethylammonium hydroxide aqueous solution.
- the substrate was washed with running ultrapure water for 1 minute, spin-dried, and post-baked on a hot plate at 200 ° C. for 5 minutes. As a result, a substrate having line and space could be produced.
- Imaging equipment Camera
- Light source Solid-state imaging device (image sensor)
- signal processing unit main control unit
- imaging object 16: package 17: pixel unit 18: terminal unit 19: enlargement unit
- 27d Infrared light filter
- Insulators 29a to 29d Photodiode 30: Support substrate
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Abstract
Description
したがって、本発明の課題は、耐クラック性に優れる硬化膜を形成可能なシロキサンポリマー含有赤外線遮蔽性組成物を提供することにある。本発明はまた、当該赤外線遮蔽性組成物を用いて形成された硬化膜、及び該硬化膜を具備する固体撮像装置を提供することにある。ここで、本明細書において「赤外線遮蔽」とは、赤外線を吸収又は反射することをいう。
(B)シロキサンポリマーが芳香族炭化水素基を有するものである、赤外線遮蔽性組成物を提供するものである。
(B)シロキサンポリマーが下記式(1)で表わされる構造単位αと下記式(3)で表わされる構造単位βとを有し、構造単位αと構造単位βとの含有割合[α/β]がモル比で100/0~5/95である、赤外線遮蔽性組成物を提供するものである。
前記第2光学層は可視光及び赤外光を透過する開口部を有し、かつ前記赤外線遮蔽性組成物を用いて形成された硬化膜からなる、固体撮像装置を提供するものである。
より好適な態様として、可視光及び赤外光の少なくとも一部を透過する第1光学層と、赤外光の少なくとも一部を吸収する第2光学層と、前記第1光学層及び前記第2光学層を透過した前記可視光を検出する第1受光素子、並びに、前記第1光学層を透過した前記赤外光を検出する第2受光素子を含む画素アレイとを備えた固体撮像装置であって、
前記第2光学層は、前記第2受光素子に対応する部分に開口部を有し、前記第2光学層が前記赤外線遮蔽性組成物を用いて形成された硬化膜からなる、固体撮像装置を提供するものである。
赤外光の少なくとも一部を吸収する第2光学層と
を備えた固体撮像装置であって、
第2光学層は可視光及び赤外光を透過する開口部を有し、下記の成分(A)及び(B)を含む赤外線遮蔽性組成物を用いて形成された硬化膜からなる、固体撮像装置を提供するものである。
(A)波長700~2000nmの範囲内に極大吸収波長を有する赤外線遮蔽剤
(B)芳香族炭化水素基を有するシロキサンポリマー
本発明の赤外線遮蔽性組成物は、(A)成分及び(B)成分を含有するものである。以下、本発明の赤外線遮蔽性組成物の構成成分について詳細に説明する。
(A)成分は、波長700~2000nmの範囲内に極大吸収波長を有する赤外線遮蔽剤である。
(A)成分としては、波長700~2000nmの範囲内に極大吸収波長を有するものであれば特に限定されないが、例えば、ジイミニウム系化合物、スクアリリウム系化合物、シアニン系化合物、フタロシアニン系化合物、ナフタロシアニン系化合物、クアテリレン系化合物、アミニウム系化合物、イミニウム系化合物、アゾ系化合物、アントラキノン系化合物、ポルフィリン系化合物、ピロロピロール系化合物、オキソノール系化合物、クロコニウム系化合物、ヘキサフィリン系化合物、金属ジチオール系化合物、銅化合物、タングステン化合物、金属ホウ化物等を挙げることができる。(A)成分は、単独で又は2種以上を組み合わせて使用することができる。
ジイミニウム(ジインモニウム)系化合物の具体例としては、例えば、特開平1-113482号公報、特開平10-180922号公報、国際公開第2003/5076号、国際公開第2004/48480号、国際公開第2005/44782号、国際公開第2006/120888号、特開2007-246464号公報、国際公開第2007/148595号、特開2011-038007号公報、国際公開第2011/118171号の段落[0118]等に記載の化合物等が挙げられる。市販品としては、例えば、EPOLIGHT1178等のEPOLIGHTシリーズ(Epolin社製)、CIR-1085等のCIR-108Xシリーズ及びCIR-96Xシリーズ(日本カーリット社製)、IRG022、IRG023、PDC-220(日本化薬社製)等を挙げることができる。
クアテリレン系化合物の具体例としては、例えば、特開2008-009206号公報の段落[0021]等に記載の化合物等が挙げられる。市販品としては、例えば、Lumogen IR765(BASF社製)等を挙げることができる。
アミニウム系化合物の具体例としては、例えば、特開平08-027371号公報の段落[0018]、特開2007-039343号公報等に記載の化合物が挙げられる。市販品としては、例えばIRG002、IRG003(日本化薬社製)等を挙げることができる。
イミニウム系化合物の具体例としては、例えば、国際公開第2011/118171号の段落[0116]等に記載の化合物が挙げられる。
アゾ系化合物の具体例としては、例えば、特開2012-215806号公報の段落[0114]~[0117]等に記載の化合物が挙げられる。
アントラキノン系化合物の具体例としては、例えば、特開2012-215806号公報の段落[0128]及び[0129]等に記載の化合物が挙げられる。
ピロロピロール系化合物の具体例としては、例えば、特開2011-068731号公報、特開2014-130343号公報の段落[0014]~[0027]等に記載の化合物が挙げられる。
オキソノール系化合物の具体例としては、例えば、特開2007-271745号公報の段落[0046]等に記載の化合物が挙げられる。
クロコニウム系化合物の具体例としては、例えば、特開2007-271745号公報の段落[0049]、特開2007-31644号公報、特開2007-169315号公報等に記載の化合物が挙げられる。
ヘキサフィリン系化合物の具体例としては、例えば、国際公開第2002/016144号の式(1)で表される化合物が挙げられる。
銅化合物としては銅錯体が好ましく、具体例としては、例えば、特開2013-253224号公報、特開2014-032380号公報、特開2014-026070号公報、特開2014-026178号公報、特開2014-139616号公報、特開2014-139617号公報等に記載の化合物が挙げられる。
タングステン化合物としては酸化タングステン化合物が好ましく、セシウム酸化タングステン、ルビジルム酸化タングステンがより好ましく、セシウム酸化タングステンが更に好ましい。セシウム酸化タングステンの組成式としてはCs0.33WO3等が挙げられ、またルビジルム酸化タングステンの組成式としてはRb0.33WO3等を挙げることができる。酸化タングステン系化合物は、例えば、住友金属鉱山株式会社製のYMF-02A等のタングステン微粒子の分散物としても、入手可能である。
金属ホウ化物の具体例としては、例えば、特開2012-068418号公報の段落[0049]等に記載の化合物が挙げられる。中でも、ホウ化ランタンが好ましい。
分散剤としては、例えば、ウレタン系分散剤、ポリエチレンイミン系分散剤、ポリオキシエチレンアルキルエーテル系分散剤、ポリオキシエチレンアルキルフェニルエーテル系分散剤、ポリエチレングリコールジエステル系分散剤、ソルビタン脂肪酸エステル系分散剤、ポリエステル系分散剤、(メタ)アクリル系分散剤等が挙げられる。市販品として、例えば、Disperbyk-2000、Disperbyk-2001、BYK-LPN6919、BYK-LPN21116、BYK-LPN22102(以上、ビックケミー(BYK)社製)等の(メタ)アクリル系分散剤、Disperbyk-161、Disperbyk-162、Disperbyk-165、Disperbyk-167、Disperbyk-170、Disperbyk-182(以上、ビックケミー(BYK)社製)、ソルスパース76500(ルーブリゾール(株)社製)等のウレタン系分散剤、ソルスパース24000(ルーブリゾール(株)社製)等のポリエチレンイミン系分散剤、アジスパーPB821、アジスパーPB822、アジスパーPB880、アジスパーPB881(以上、味の素ファインテクノ(株)社製)等のポリエステル系分散剤の他、BYK-LPN21324(ビックケミー(BYK)社製)を使用することができる。分散剤は、単独で又は2種以上を組み合わせて使用することができる。
このような態様とすることで、赤外線を十分に遮蔽することができる。ここで、本明細書において「固形分」とは、後述する有機溶媒以外の成分である。
本発明における(B)シロキサンポリマーは、芳香族炭化水素基を有するものである。ここで、本明細書において「芳香族炭化水素基」とは、環構造中に芳香環構造を有する炭化水素基をいい、単環式芳香族炭化水素基、ベンゼン環同士が縮合又はベンゼン環と他の炭化水素環とが縮合した縮合型芳香族炭化水素基、並びにベンゼン環及び縮合環のうちの2個以上が単結合で結合した多環式芳香族炭化水素基も包含する概念である。なお、芳香族炭化水素基は、環構造のみで構成されている必要はなく、環構造の一部が鎖状炭化水素基で置換されていてもよい。鎖状炭化水素基としては、例えば、アルキル基、アルケニル基、アルキニル基が挙げられ、鎖状炭化水素基の炭素数は、好ましくは1~6、更に好ましくは1~4である。
芳香族炭化水素基の炭素数は特に限定されないが、6~20が好ましく、6~14がより好ましく、6~10が更に好ましい。
アルキル基としては、例えば、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、sec-ブチル基、tert-ブチル基、ヘキシル基、ヘプチル基、オクチル基、ノニル基、デシル基、ウンデシル基、1-メチルデシル基、ドデシル基、1-メチルウンデシル基、1-エチルデシル基、トリデシル基、テトラデシル基、tert-ドデシル基、ペンタデシル基、1-ヘプチルオクチル基、ヘキサデシル基、オクタデシル基、ヘンエイコサン-1-イル基、ドコサン-1-イル基、トリコサン-1-イル基、テトラコサン-1-イル基等を挙げられる。また、アルケニル基としては、例えば、エテニル基、1-プロペニル基、2-プロペニル基、1-ブテニル基、2-ブテニル基、1,3-ブタジエニル基、1-ペンテニル基、2-ペンテニル基、1-ヘキセニル基、2-エチル-2-ブテニル基、2-オクテニル基、(4-エテニル)-5-ヘキセニル基、2-デセニル基等を挙げることができる。更に、アルキニル基としては、例えば、エチニル基、1-プロピニル基、1-ブチニル基、1-ペンチニル基、3-ペンチニル基、1-ヘキシニル基、2-エチル-2-ブチニル基、2-オクチニル基、(4-エチニル)-5-ヘキシニル基、2-デシニル基等が挙げられる。
シクロアルキル基としては、例えば、シクロプロピル基、シクロブチル基、シクロペンチル基、シクロヘキシル基、シクロヘプチル基、シクロオクチル基等が挙げられる。また、シクロアルケニル基としては、シクロヘキセニル基等を挙げることができる。なお「脂環式炭化水素基」とは、環状構造を有さない脂肪族炭化水素基を除く概念である。
また、(B)シロキサンポリマーは、耐クラック性、赤外線遮蔽性のより一層の向上、ヘイズの低減及び現像残渣の発生をより高水準で抑制する観点から、(B)シロキサンポリマー中の構造単位αと構造単位βとの含有割合[α/β]が、100/0~10/90であることが好ましく、85/15~20/80がより好ましく、75/25~25/75が更に好ましく、75/25~30/70がより更に好ましい。
本発明の赤外線遮蔽性組成物は、(C)感光剤を含有することができる。ここで、本明細書において「感光剤」とは、光照射により赤外線遮蔽性組成物から得られる硬化膜の、溶媒に対する溶解性を変化させる性質を有する化合物をいう。このような化合物としては、例えば、光重合開始剤、光酸発生剤等を挙げることができる。(C)成分は、単独で又は2種以上を組み合わせて使用することができる。
中でも、光重合開始剤としては、ビイミダゾール系化合物、チオキサントン系化合物、アセトフェノン系化合物、トリアジン系化合物、O-アシルオキシム系化合物の群から選ばれる少なくとも1種が好ましい。なお、ビイミダゾール系化合物を用いる場合、2-メルカプトベンゾチアゾール等の水素供与体を併用してもよい。ここでいう「水素供与体」とは、露光によりビイミダゾール系化合物から発生したラジカルに対して、水素原子を供与することができる化合物を意味する。また、ビイミダゾール系化合物以外の光重合開始剤を用いる場合には、4-ジメチルアミノ安息香酸エチル等の増感剤を併用することもできる。
キノンジアジド化合物の具体例としては、例えば、特開2008-156393号公報の段落[0040]~[0048]に記載の化合物、特開2014-174406号公報の段落[0172]~[0186]に記載の化合物を挙げることができる。
本発明の赤外線遮蔽性組成物は、(D)重合性化合物を含有することができる。これにより、赤外線遮蔽性組成物の硬化性が高められ、耐クラック性をより一層向上させることができる。ここで、本明細書において「重合性化合物」とは、2個以上の重合可能な基を有する化合物をいう。重合可能な基としては、例えば、エチレン性不飽和基、オキシラニル基、オキセタニル基、N-アルコキシメチルアミノ基等を挙げることができる。(D)成分は、単独で又は2種以上を混合して使用することができる。中でも、(D)成分としては、2個以上の(メタ)アクリロイル基を有する化合物、2個以上のN-アルコキシメチルアミノ基を有する化合物が好ましい。
水酸基を有する(メタ)アクリレートとしては、例えば、2-ヒドロキシエチル(メタ)アクリレート、トリメチロールプロパンジ(メタ)アクリレート、ペンタエリスリトールトリ(メタ)アクリレート、ジペンタエリスリトールペンタ(メタ)アクリレート、グリセロールジメタクリレート等を挙げることができる。
多官能イソシアネートとしては、例えば、トリレンジイソシアネート、ヘキサメチレンジイソシアネート、ジフェニルメチレンジイソシアネート、イソホロンジイソシアネート等を挙げることができる。酸無水物としては、例えば、無水こはく酸、無水マレイン酸、無水グルタル酸、無水イタコン酸、無水フタル酸、ヘキサヒドロ無水フタル酸の如き二塩基酸の無水物、無水ピロメリット酸、ビフェニルテトラカルボン酸二無水物、ベンゾフェノンテトラカルボン酸二無水物の如き四塩基酸二無水物を挙げることができる。
アルキレンオキサイド変性された多官能(メタ)アクリレートとしては、エチレンオキサイド及びプロピレンオキサイドから選ばれる少なくとも1種により変性されたビスフェノールAジ(メタ)アクリレート、エチレンオキサイド及びプロピレンオキサイドから選ばれる少なくとも1種により変性されたイソシアヌル酸トリ(メタ)アクリレート、エチレンオキサイド及びプロピレンオキサイドから選ばれる少なくとも1種により変性されたトリメチロールプロパントリ(メタ)アクリレート、エチレンオキサイド及びプロピレンオキサイドから選ばれる少なくとも1種により変性されたペンタエリスリトールトリ(メタ)アクリレート、エチレンオキサイド及びプロピレンオキサイドから選ばれる少なくとも1種により変性されたペンタエリスリトールテトラ(メタ)アクリレート、エチレンオキサイド及びプロピレンオキサイドから選ばれる少なくとも1種により変性されたジペンタエリスリトールペンタ(メタ)アクリレート、エチレンオキサイド及びプロピレンオキサイドから選ばれる少なくとも1種により変性されたジペンタエリスリトールヘキサ(メタ)アクリレート等を挙げることができる。
本発明の赤外線遮蔽性組成物は、(E)バインダー樹脂(前記(B)シロキサンポリマーを除く。)を含有することができる。(E)成分は、アルカリ可溶性であることが好ましく、例えば、酸性基を有する樹脂を挙げることができる。酸性基としては、例えば、カルボキシル基、フェノール性水酸基、スルホ基等が挙げられる。酸性基を有する樹脂は、1分子中に1個以上の酸性基を有する重合体であれば特に限定されるものではないが、好適な態様として、例えば、カルボキシル基を有する重合体(以下、「カルボキシル基含有重合体」とも称する。)が好ましく、例えば、1個以上のカルボキシル基を有するエチレン性不飽和単量体(以下、「不飽和単量体(e1)」とも称する。)と他の共重合可能なエチレン性不飽和単量体(以下、「不飽和単量体(e2)」とも称する。)との共重合体を挙げることができる。(E)成分は、単独で又は2種以上を組み合わせて使用することができる。
不飽和単量体(e1)は、単独で又は2種以上を組み合わせて使用することができる。
N-フェニルマレイミド、N-シクロヘキシルマレイミドの如きN-置換マレイミド;スチレン、α-メチルスチレン、p-ヒドロキシスチレン、p-ヒドロキシ-α-メチルスチレン、p-ビニルベンジルグリシジルエーテル、アセナフチレンの如き芳香族ビニル化合物;
不飽和単量体(e2)は、単独で又は2種以上を組み合わせて使用することができる。
本発明の赤外線遮蔽性組成物は、(A)成分及び(B)成分、並びに任意的に加えられる他の成分を含有するものであるが、通常、有機溶媒を配合して液状組成物として調製される。
(F)成分としては、赤外線遮蔽性組成物を構成する(A)成分及び(B)成分や他の成分を分散又は溶解し、かつこれらの成分と反応せず、適度の揮発性を有するものである限り、適宜選択して使用することができる。(F)成分は、単独で又は2種以上を組み合わせて使用することができる。
エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールモノ-n-プロピルエーテル、エチレングリコールモノ-n-ブチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールモノ-n-プロピルエーテル、ジエチレングリコールモノ-n-ブチルエーテル、トリエチレングリコールモノメチルエーテル、トリエチレングリコールモノエチルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノ-n-プロピルエーテル、プロピレングリコールモノ-n-ブチルエーテル、ジプロピレングリコールモノメチルエーテル、ジプロピレングリコールモノエチルエーテル、ジプロピレングリコールモノ-n-プロピルエーテル、ジプロピレングリコールモノ-n-ブチルエーテル、トリプロピレングリコールモノメチルエーテル、トリプロピレングリコールモノエチルエーテル等の(ポリ)アルキレングリコールモノアルキルエーテル;
メタノール、エタノール、プロパノール、ブタノール、イソプロパノール、イソブタノール、t-ブタノール、オクタノール、2-エチルヘキサノール、シクロヘキサノール等の(シクロ)アルキルアルコール;
ジアセトンアルコール等のケトアルコール;
ジエチレングリコールジメチルエーテル、ジエチレングリコールメチルエチルエーテル、ジエチレングリコールジエチルエーテル、テトラヒドロフラン等のグリコールエーテル;
メチルエチルケトン、シクロヘキサノン、シクロペンタノン、2-ヘプタノン、3-ヘプタノン等のケトン;
3-メトキシプロピオン酸メチル、3-メトキシプロピオン酸エチル、3-エトキシプロピオン酸メチル、3-エトキシプロピオン酸エチル、エトキシ酢酸エチル、3-メチル-3-メトキシブチルプロピオネート等のアルコキシカルボン酸エステル;
酢酸エチル、酢酸n-プロピル、酢酸i-プロピル、酢酸n-ブチル、酢酸i-ブチル、ぎ酸n-アミル、酢酸i-アミル、プロピオン酸n-ブチル、酪酸エチル、酪酸n-プロピル、酪酸i-プロピル、酪酸n-ブチル、ピルビン酸メチル、ピルビン酸エチル、ピルビン酸n-プロピル、アセト酢酸メチル、アセト酢酸エチル、2-オキソブタン酸エチル等の脂肪酸アルキルエステル;
トルエン、キシレン等の芳香族炭化水素;
四塩化炭素、トリクロロエチレン、クロロホルム、1,1,1-トリクロロエタン、塩化メチレン、モノクロロベンゼン等のハロゲン化炭化水素;
N,N-ジメチルホルムアミド、N,N-ジメチルアセトアミド、N-メチルピロリドン等のアミド、又はラクタム等を挙げることができる。
本発明の赤外線遮蔽性組成物は、必要に応じて種々の添加剤を含有することができる。
添加剤としては、例えば、シリカ、アルミナ、アクリル系微粒子等の充填剤;ポリビニルアルコール、ポリ(フロオロアルキルアクリレート)類等の高分子化合物;ノニオン系界面活性剤、フッ素系界面活性剤、シリコーン系界面活性剤等の界面活性剤;ビニルトリメトキシシラン、ビニルトリエトキシシラン、ビニルトリス(2-メトキシエトキシ)シラン、N-(2-アミノエチル)-3-アミノプロピルメチルジメトキシシラン、N-(2-アミノエチル)-3-アミノプロピルトリメトキシシラン、3-アミノプロピルトリエトキシシラン、3-グリシドキシプロピルトリメトキシシラン、3-グリシドキシプロピルメチルジメトキシシラン、2-(3,4-エポキシシクロヘキシル)エチルトリメトキシシラン、3-クロロプロピルメチルジメトキシシラン、3-クロロプロピルトリメトキシシラン、3-メタクリロイロキシプロピルトリメトキシシラン、3-メルカプトプロピルトリメトキシシラン等の密着促進剤;2,2-チオビス(4-メチル-6-t-ブチルフェノール)、2,6-ジ-t-ブチルフェノール、ペンタエリスリトールテトラキス[3-(3,5-ジ-t-ブチル-4-ヒドロキシフェニル)プロピオネート]、3,9-ビス[2-[3-(3-t-ブチル-4-ヒドロキシ-5-メチルフェニル)-プロピオニルオキシ]-1,1-ジメチルエチル]-2,4,8,10-テトラオキサ-スピロ[5・5]ウンデカン、チオジエチレンビス[3-(3,5-ジ-t-ブチル-4-ヒドロキシフェニル)プロピオネート]等の酸化防止剤;2-(3-t-ブチル-5-メチル-2-ヒドロキシフェニル)-5-クロロベンゾトリアゾール、アルコキシベンゾフェノン類等の紫外線吸収剤;ポリアクリル酸ナトリウム等の凝集防止剤;マロン酸、アジピン酸、イタコン酸、シトラコン酸、フマル酸、メサコン酸、2-アミノエタノール、3-アミノ-1-プロパノール、5-アミノ-1-ペンタノール、3-アミノ-1,2-プロパンジオール、2-アミノ-1,3-プロパンジオール、4-アミノ-1,2-ブタンジオール等の残渣改善剤;こはく酸モノ〔2-(メタ)アクリロイロキシエチル〕、フタル酸モノ〔2-(メタ)アクリロイロキシエチル〕、ω-カルボキシポリカプロラクトンモノ(メタ)アクリレート等の現像性改善剤;1-(4,7-ジブトキシ-1-ナフタレニル)テトラヒドロチオフェニウムトリフルオロメタンスルホナート等の熱酸発生剤や2,2'-アゾビス(2,4-ジメチルバレロニトリル)等の熱ラジカル発生剤の感熱剤を挙げることができる。
これら添加剤の含有量は、本発明の目的を損なわない範囲内で適宜選択することができる。
本発明の硬化膜は、本発明の赤外線遮蔽性組成物を用いて形成されるため、赤外領域(波長700nm付近の近赤外領域も含む)における遮光性(赤外線遮蔽性)が高く、耐クラック性にも優れる。したがって、本発明の硬化膜は、赤外線遮蔽性硬化膜、例えば、赤外線カットフィルタとして好適に使用することができる。
(1)本発明の赤外線遮蔽性組成物を基板上に塗布し、乾燥して塗膜を形成する工程
(2)前記塗膜を硬化させる工程
工程(1)は、基板上に本発明の赤外線遮蔽性組成物を塗布し、乾燥して塗膜を形成する工程である。基板としては特に限定されず、ガラス、石英、シリコン、樹脂等が挙げられ、適宜選択することができる。樹脂の材質としては、例えば、ポリカーボネート、ポリエステル、芳香族ポリアミド、ポリアミドイミド、ポリイミド、シクロオレフィンポリマーを挙げられる。なお、基板は、所望により、シランカップリング剤等による薬品処理、プラズマ処理、イオンプレーティング、スパッタリング、気相反応法、真空蒸着等の適宜の前処理を施しておくこともできる。なお、後述する固体撮像装置に本発明の赤外線遮蔽性組成物を適用する場合、可視光パスフィルタ(カラーフィルタ)やフォトダイオード等の受光素子の受光面に塗布してもよい。可視光パスフィルタ(カラーフィルタ)やフォトダイオード等の受光素子の受光面に本発明の赤外線遮蔽性組成物を塗布することにより、フォトダイオードに入射する赤外線を効率的に遮光することができる点で好ましい。
工程(2)は、工程(1)で形成された塗膜を硬化させる工程である。これにより、硬化膜の機械的強度、耐クラック性を高めることができる。
硬化処理は特に制限はなく、目的に応じて適宜選択することができるが、例えば、露光処理、加熱処理等が挙げられる。ここで、本明細書において「露光」とは、各種波長の光のみならず、電子線、X線等の放射線照射をも包含する概念である。
露光は、放射線の照射により行うことが好ましく、放射線としては、電子線、KrF、ArF、g線、h線、i線等の紫外線や可視光が挙げられ、中でも、KrF、g線、h線、i線が好ましい。
露光方式としては、ステッパー露光やアライナー露光等が挙げられる。
露光量は、5~3000mJ/cm2が好ましく、10~2000mJ/cm2がより好ましく、50~1000mJ/cm2が更に好ましい。
露光装置としては特に制限はなく、公知の装置を適宜選択することができるが、例えば、超高圧水銀灯等のUV露光機が挙げられる。
加熱温度は、120~250℃が好ましく、160~230℃がより好ましい。
加熱時間は、3分~180分が好ましく、5分~120分がより好ましい。
加熱装置としては特に制限はなく、公知の装置を適宜選択することができるが、例えば、ドライオーブン、ホットプレート、IRヒーター等が挙げられる。
具体的には、エッチング法、アルカリ現像法、溶剤現像法等がある。
アルカリ現像液としては、例えば、炭酸ナトリウム、炭酸水素ナトリウム、水酸化ナトリウム、水酸化カリウム、テトラメチルアンモニウムハイドロオキサイド、コリン、1,8-ジアザビシクロ-[5.4.0]-7-ウンデセン、1,5-ジアザビシクロ-[4.3.0]-5-ノネン等の水溶液が好ましい。
アルカリ現像液には、例えば、メタノール、エタノール等の水溶性有機溶剤や界面活性剤等を適量添加することもできる。なお、アルカリ現像後は、通常、水洗する。
現像処理法としては、シャワー現像法、スプレー現像法、ディップ(浸漬)現像法、パドル(液盛り)現像法等を適用することができる。現像条件は、常温で5~300秒が好ましい。
本発明の固体撮像装置は、本発明の硬化膜を具備するものであり、本発明の固体撮像装置は適宜の構造を採ることができる。例えば、1つの実施の形態として、本発明の赤外線遮蔽性組成物を用いて、CMOS基板などの半導体基板上に、前述と同様の操作により硬化膜を形成することにより、特に可視光の検出精度に優れた固体撮像装置を作製することができる。
以下、本発明の一実施形態に係る固体撮像装置について、図面を参照しながら詳細に説明する。以下に示す実施形態は本発明の実施形態の一例であって、本発明はここで説明する実施形態に限定されるものではない。
図1は、本発明の一実施形態に係る固体撮像装置の応用例である。具体的には、本実施形態の固体撮像装置をTOF(Time Of Flight)方式の撮像装置(例えば距離画像カメラ)に応用した例を示している。なお、ここで説明する撮像装置はあくまで概略図であり、他の要素が追加若しくは削除されることを妨げるものではない。
次に、本発明の第2の実施形態に係る固体撮像装置について説明する。
図8は、図2に示した画素20をIII-III'に沿って切断された、第2の実施形態に係る固体撮像装置の概略断面図である。第2の実施形態に係る固体撮像装置は、第1の実施形態に係る固体撮像装置と同様の基本構成を有するが、次の点で第1の実施形態に係る固体撮像装置と相違する。即ち、第2の実施形態に係る固体撮像装置は、第1光学層21、フォトダイオード29d及び赤外光パスフィルタ27dが存在せず、かつ第2光学層25がマイクロレンズアレイ23の下方に設置されている点で、第1の実施形態に係る固体撮像装置と相違する。第2光学層25は、第1の実施形態に係る第2光学層と同様に赤外光の少なくとも一部を吸収するものであり、第2光学層25を透過した透過光を検出する第1受光素子を備えた固体撮像装置であって、第2光学層が本発明の赤外線遮蔽性組成物を用いて形成された硬化膜からなる。
第1受光素子は、可視光パスフィルタ27a~cの下方に設けられるフォトダイオード29a~29cを指し、該フォトダイオードの上方に第2光学層が配置される。また可視光パスフィルタ27a~cは、緑色光を透過するパスフィルタ、赤色光を透過するパスフィルタ、及び、青色光を透過するパスフィルタを含むことができる。このように、第2の実施形態に係る固体撮像装置は、第2光学層25が可視光検出用画素の上方に設けられているため、可視光はフォトダイオード29a~cに入射する赤外光の光量を大幅に低減することができる。また、第1の実施形態に係る固体撮像装置においては第2光学層25の一部に開口部を形成する必要があるのに対し、第2の実施形態に係る固体撮像装置では第2光学層25に開口部を形成する必要がないため、固体撮像装置の製造が簡便になるという利点も有する。
次に、本発明の第3の実施形態に係る固体撮像装置について説明する。
図9は、図2に示した画素20をIII-III'に沿って切断された、第3の実施形態に係る固体撮像装置の概略断面図である。第3の実施形態に係る固体撮像装置は、第2の実施形態に係る固体撮像装置と同様の基本構成を有するが、次の点で第2の実施形態に係る固体撮像装置と相違する。即ち、第3の実施形態に係る固体撮像装置は、第2光学層25がマイクロレンズアレイ23の上方に設置されている点で、第2の実施形態に係る固体撮像装置と相違する。このように、第3の実施形態に係る固体撮像装置は、第2光学層25が可視光検出用画素の上方に設けられているため、可視光はフォトダイオード29a~cに入射する赤外光の光量を大幅に低減することができる。
無水マレイン酸10.00gをプロピレングリコールモノメチルエーテル(以下「PGME」とも称する)90.00gに加熱溶解させ、10%の無水マレイン酸のPGME溶液を調製した。続いて、10%の無水マレイン酸のPGME溶液1.8gと水72.41gを混合し、酸触媒溶液を調製した。
続いて、フラスコにメチルトリメトキシシランを182.66g、及びPGMEを43.13g加えて、冷却管及びあらかじめ調製した酸触媒溶液を入れた滴下ロートをセットした。次いで、上記フラスコをオイルバスにて50℃に加熱した後、上記酸触媒溶液をゆっくり滴下し、滴下が完了してから60℃で3時間反応させた。反応終了後、反応溶液の入ったフラスコを放冷した。
次に、反応溶液を別のフラスコに移し、エバポレーターで固形分量が50%になるまで濃縮した後、固形分量が30%となるまでPGMEで希釈した。次いで、固形分量50%となるまで再度濃縮を行った後、固形分濃度35質量%となるようにPGMEで希釈する操作を行い、残存している水やメタノールを除去することで、固形分濃度35質量%のシロキサンポリマー(B-1)溶液を得た。シロキサンポリマー(B-1)のMwは2,480、Mnは1,200、Mw/Mnは2.1であった。
合成例1において、10%の無水マレイン酸のPGME溶液1.80g、水69.21gを混合した酸触媒溶液、シラン化合物としてメチルトリメトキシシラン165.86g、フェニルトリメトキシラン12.71g、溶媒であるPGMEを50.43gへ変えた以外は、合成例1と同様にして、固形分濃度35質量%のシロキサンポリマー(B-2)溶液を得た。
合成例1において、10%の無水マレイン酸のPGME溶液1.80g、水63.59gを混合した酸触媒溶液、シラン化合物としてメチルトリメトキシシラン136.35g、フェニルトリメトキシラン35.03g、溶媒であるPGMEを63.23gへ変えた以外は、合成例1と同様にして、固形分濃度35質量%のシロキサンポリマー(B-3)溶液を得た。
合成例1において、10%の無水マレイン酸のPGME溶液1.80g、水58.81gを混合した酸触媒溶液、シラン化合物としてメチルトリメトキシシラン111.27g、フェニルトリメトキシラン53.99g、溶媒であるPGMEを74.13gへ変えた以外は、合成例1と同様にして、固形分濃度35質量%のシロキサンポリマー(B-4)溶液を得た。
合成例1において、10%の無水マレイン酸のPGME溶液1.80g、水49.51gを混合した酸触媒溶液、シラン化合物としてメチルトリメトキシシラン62.45g、フェニルトリメトキシラン90.91g、溶媒であるPGMEを95.32g、反応温度を容器内がRefluxになるように変えた以外は、合成例1と同様にして、固形分濃度35質量%のシロキサンポリマー(B-5)溶液を得た。
合成例1において、10%の無水マレイン酸のPGME溶液1.80g、水43.95gを混合した酸触媒溶液、シラン化合物としてメチルトリメトキシシラン33.26g、フェニルトリメトキシラン112.98g、溶媒であるPGMEを108.00gへ変えた以外は合成例1と同様にして、固形分濃度35質量%のシロキサンポリマー(B-6)溶液を得た。
合成例5において、10%の無水マレイン酸のPGME溶液1.80g、水37.62gを混合した酸触媒溶液、シラン化合物としてフェニルトリメトキシラン138.14g、溶媒であるPGMEを122.44gへ変えた以外は合成例5と同様にして、固形分濃度35質量%のシロキサンポリマー(B-7)溶液を得た。
合成例1において、10%の無水マレイン酸のPGME溶液1.80g、水40.37gを混合した酸触媒溶液、シラン化合物としてメチルトリメトキシシラン30.55g、トリルトリメトキシラン111.11g、溶媒であるPGMEを116.17gへ変えた以外は合成例1と同様にして、固形分濃度35質量%のシロキサンポリマー(B-8)溶液を得た。
合成例1において、10%の無水マレイン酸のPGME溶液1.80g、水43.95gを混合した酸触媒溶液、シラン化合物としてメチルトリメトキシシラン27.72g、3-メタクリロキシプロピルトリメトキシシラン(商品名サイラエースS710、チッソ(株)製)10.11g、フェニルトリメトキシラン112.98g、溶媒であるPGMEを108.00gへ変えた以外は合成例1と同様にして、固形分濃度35質量%のシロキサンポリマー(B-9)溶液を得た。
合成例10
冷却管と攪拌機を備えたフラスコに、プロピレングリコールモノメチルエーテルアセテート100質量部を仕込んで窒素置換した。80℃に加熱して、同温度で、プロピレングリコールモノメチルエーテルアセテート100質量部、メタクリル酸20質量部、スチレン10質量部、ベンジルメタクリレート5質量部、2-ヒドロキシエチルメタクリレート15質量部、2-エチルヘキシルメタクリレート23質量部、N-フェニルマレイミド12質量部、こはく酸モノ(2-アクリロイロキシエチル)15質量部及び2,2'-アゾビス(2,4-ジメチルバレロニトリル)6質量部の混合溶液を1時間かけて滴下し、この温度を保持して2時間重合した。その後、反応溶液の温度を100℃に昇温させ、さらに1時間重合することにより、バインダー樹脂溶液(固形分濃度33質量%)を得た。得られたバインダー樹脂は、Mwが12,200、Mnが6,500であった。このバインダー樹脂を「バインダー樹脂(E-1)」とする。
調製例1
フラスコ内を窒素置換した後、2,2'-アゾビスイソブチロニトリルを0.6質量部溶解したメチル-3-メトキシプロピオネート溶液を200質量部仕込んだ。引き続きtert-ブチルメタクリレートを37.5質量部、グリシジルメタクリレート62.5質量部を仕込んだ後、撹拌し、70℃にて6時間加熱した。冷却後、重合体を含有する樹脂溶液を得た。
次に、この樹脂溶液を33.3質量部(重合体を10質量部含有)、メチル-3-メトキシプロピオネートを31.9質量部、プロピレングリコールモノメチルエーテルを3.4質量部で希釈したのち、トリメリット酸を0.3質量部、3-グリシドキシプロピルトリメトキシシランを0.5質量部、商品名「FC-4432」(住友スリーエム(株)製)0.005質量部を溶解し、下地膜形成用組成物を調製した。
実施例1
(A)成分としてシアニン系化合物であるNK-5060(株式会社林原製、極大吸収波長865nm(膜))を2.53質量部、(B)成分としてシロキサンポリマー(B-2)溶液(固形分濃度35質量%)を100.00質量部、(C)感光剤として、酸発生剤である1-(4,7-ジブトキシ-1-ナフタレニル)テトラヒドロチオフェニウムトリフルオロメタンスルホナートを1.63質量部、添加剤としてフッ素系界面活性剤であるフタージェントFTX-218(株式会社ネオス社製)0.07質量部並びにN-t-ブトキシカルボニルジシクロヘキシルアミン0.16質量部、及び(F)有機溶媒としてシクロヘキサノンを289.55質量部加えて混合することで、固形分濃度が10質量%の赤外線遮蔽性組成物(S-1)を得た。
ガラス基板上に、自動塗布現像装置(東京エレクトロン(株)製クリーントラック、商品名「MARK-Vz」)を用いて、前記下地膜形成用組成物をスピンコート法にて塗布した後、250℃で2分間ベークを行い、膜厚0.6μmの下地膜を形成した。
この下地膜上に赤外線遮蔽性組成物(S-1)をスピンコート法にて塗布した後、100℃のホットプレートで2分間プレベークを行って、膜厚0.5μmの塗膜を形成した。その後、200℃のホットプレートで5分間ポストベークを行うことにより、硬化膜を有するガラス基板を作製した。
得られた基板を光学顕微鏡で観察し、クラックが全く無い場合を「◎」、1~3個のクラックがある場合を「○」、4~10個のクラックがある場合を「△」、11個以上である場合を「×」として評価した。結果を表2に示す。
次に、得られた基板のヘイズを、スガ試験機社製のヘーズメーターを用いてJIS K7136に準じて測定し、ヘイズが0.3%未満の場合を「◎」、0.3%以上0.5%未満の場合を「○」、0.5%以上1.0%未満の場合を「△」、1.0%以上の場合を「×」として評価した。結果を表2に示す。なおヘイズの測定は、硬化膜を形成していないガラス基板との対比で行った。
実施例1において、シロキサンポリマーを(B-3)~(B-9)とした以外は、実施例1と同様にして赤外線遮蔽性組成物(S-2)~(S-8)を調製し、硬化膜の形成と評価を行った。その結果を表2に示した。
また、実施例5で得られた硬化膜の透過スペクトルを図7に示す。但し、図7は、ガラス基板上に下地膜だけを形成した基板との対比である。
実施例1において、シロキサンポリマーを(B-1)とした以外は、実施例1と同様にして 赤外線遮蔽性組成物(S-9)を調製し、硬化膜の形成と評価を行った。その結果を表2に示した。
実施例1において、シロキサンポリマー(B-2)溶液(固形分濃度35質量%)100.00質量部に代えてシロキサンポリマー(B-2)溶液(固形分濃度35質量%)50質量部を用い、更に(E)成分としてバインダー樹脂(E-1)溶液(固形分濃度33質量%)50質量部を追加した以外は実施例1と同様にして赤外線遮蔽性組成物(S-10)を調製し、硬化膜の形成と評価を行った。その結果を表3に示す。
実施例9において、シロキサンポリマーの種類を(B-3)~(B-9)とした以外は、実施例9と同様にして赤外線遮蔽性組成物(S-11)~(S-17)を調製し、硬化膜の形成と評価を行った。その結果を表3に示す。
実施例9において、シロキサンポリマーの種類を(B-1)とした以外は、実施例9と同様にして 赤外線遮蔽性組成物(S-18)を調製し、硬化膜の形成と評価を行った。その結果を表3に示す。
実施例4において、NK-5060に代えて、表4に記載の(A)成分を用いた以外は実施例4と同様にして赤外線遮蔽性組成物(S-19)~(S-35)を調製し、硬化膜の形成と評価を行った。その結果を表4に示す。なお、実施例25~33においては、2種類の(A)成分を表4に記載の質量比で混合して用いた。
実施例12において、NK-5060に代えて、表4に記載の(A)成分を用いた以外は実施例12と同様にして赤外線遮蔽性組成物(S-36)~(S-47)を調製し、硬化膜の形成と評価を行った。その結果を表4に示す。なお、実施例39~45においては、2種類の(A)成分を表4に記載の質量比で混合して用いた。
A-1:NK-5060(株式会社林原製。シアニン系化合物。極大吸収波長865nm(膜))
A-2:Excolor TX-EX 708K(日本触媒株式会社製。フタロシアニン系化合物。極大吸収波長755nm(膜))
A-3:特許第5046515号明細書の実施例1に従って合成したフタロシアニン系化合物(極大吸収波長990nm(膜))
A-4:Lumogen IR765(BASF社製。クアテリレン系化合物。極大吸収波長705nm(膜))
A-5:特開2014-139617号公報の段落〔0263〕に記載の方法に従って合成したリン酸エステル銅錯体(銅化合物。極大吸収波長868nm(膜))
A-6:特開2011-68731号公報の合成例2に従って合成したピロロピロール系化合物(極大吸収波長780nm(膜))
A-7:特開昭61-42585号公報の化合物(1)(金属ジチオール系化合物。極大吸収波長908nm(膜))
A-8:特許第4168031号明細書の実施例3に従って合成したビス{ビス(トリフルオロメタンスルホン)イミド酸}N,N,N’,N’-テトラキス(p-ジベンジルアミノフェニル)-p-フェニレンジイモニウム(ジイミニウム系化合物。極大吸収波長1060nm(膜))
A-9:YMF-02(住友金属鉱山株式会社製。セシウム酸化タングステン化合物であるCs0.33WO3(平均分散粒径800nm以下、極大吸収波長1550~1650nm(膜))の18.5質量%分散液)
2枚のガラス基板上に、自動塗布現像装置(東京エレクトロン(株)製クリーントラック、商品名「MARK-Vz」)を用いて、前記下地膜形成用組成物をスピンコート法にて塗布した後、250℃で2分間ベークを行い、膜厚0.6μmの下地膜をそれぞれ形成した。
1枚目の基板に対して、下地膜上に、実施例12で得られた赤外線遮蔽性組成物(S-13)をスピンコート法にて塗布した後、100℃のホットプレートで2分間プレベークを行って、膜厚0.5μmの塗膜を形成した。続いて、露光機(キヤノン社の「MPA-600FA」(ghi線混合))を用い、フォトマスクを介さずに、塗膜に対し1,000J/m2の露光量で露光した。次に200℃のホットプレートで5分間ポストベークを行って、硬化膜を有する基板を作製した。
得られた基板について実施例1と同様にして評価を行ったところ、耐クラック性は「◎」、ヘイズは「◎」であった。
2枚目の基板に対して、下地膜上に、実施例12で得られた赤外線遮蔽性組成物(S-13)をスピンコート法にて塗布した後、100℃のホットプレートで2分間プレベークを行って、膜厚0.5μmの塗膜を形成した。続いて、露光機(キヤノン社の「MPA-600FA」(ghi線混合))を用い、60μmのライン・アンド・スペース(10対1)のパターンを有するマスクを介して、塗膜に対し1,000J/m2の露光量で露光した。次いで、2.38質量%のテトラメチルアンモニウムヒドロキシド水溶液を用いて、23℃において80秒間液盛り法で現像した。超純水で1分間流水洗浄を行い、スピン乾燥した後、200℃のホットプレートで5分間ポストベークを行ったところ、ライン・アンド・スペースを有する基板を作製することができた。
11:光源
12:固体撮像装置(イメージセンサ)
13:信号処理部
14:主制御部
15:撮像対象物
16:パッケージ
17:画素部
18:端子部
19:拡大部
20:画素
21:第1光学層(2波長バンドパスフィルタ)
22:第1間隙
23:マイクロレンズアレイ
24:第2間隙
25:第2光学層(赤外線カットフィルタ)
26:第3間隙
27a~27c:可視光パスフィルタ(カラーフィルタ)
27d:赤外光パスフィルタ
28:絶縁体
29a~29d:フォトダイオード
30:支持基板
Claims (15)
- m及びnが1である、請求項1に記載の赤外線遮蔽性組成物。
- 構造単位αと構造単位βとの含有割合[a/b]がモル比で100/0~10/90である、請求項1又は2に記載の赤外線遮蔽性組成物。
- (A)赤外線吸収剤がジイミニウム系化合物、スクアリリウム系化合物、シアニン系化合物、フタロシアニン系化合物、ナフタロシアニン系化合物、クアテリレン系化合物、アミニウム系化合物、イミニウム系化合物、アゾ系化合物、アントラキノン系化合物、ポルフィリン系化合物、ピロロピロール系化合物、オキソノール系化合物、クロコニウム系化合物、ヘキサフィリン系化合物、金属ジチオール系化合物、銅化合物、タングステン化合物及び金属ホウ化物よりなる群から選ばれる少なくとも1種である、請求項1~3のいずれか1項に記載の赤外線遮蔽性組成物。
- 更に(C)感光剤を含む、請求項1~4のいずれか1項に記載の赤外線遮蔽性組成物。
- 更に感熱剤を含む、請求項1~4のいずれか1項に記載の赤外線遮蔽性組成物。
- 請求項1~6のいずれか1項に記載の赤外線遮蔽性組成物を用いて形成された硬化膜。
- 膜厚0.5μmにおいて、波長500~600nmの帯域における光の最小透過率が90%以上であり、かつ波長850nmにおける光の透過率が40%以下である、請求項7に記載の硬化膜。
- 赤外線カットフィルタである、請求項7又は8に記載の硬化膜。
- 請求項7~9のいずれか1項に記載の硬化膜を具備する固体撮像装置。
- 可視光及び赤外光の少なくとも一部を透過する第1光学層と、
赤外光の少なくとも一部を吸収する第2光学層と
を備えた固体撮像装置であって、
前記第2光学層は可視光及び赤外光を透過する開口部を有し、下記の成分(A)及び(B)を含む赤外線遮蔽性組成物を用いて形成された硬化膜からなる、固体撮像装置。
(A)波長700~2000nmの範囲内に極大吸収波長を有する赤外線遮蔽剤
(B)芳香族炭化水素基を有するシロキサンポリマー - シロキサンポリマーは、芳香族炭化水素基の含有率がSi原子に対して5モル%以上である、請求項11に記載の固体撮像装置。
- シロキサンポリマーは、構造単位αの含有割合が5モル%以上である、請求項13に記載の固体撮像装置。
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JP2018040955A (ja) * | 2016-09-07 | 2018-03-15 | 株式会社日本触媒 | 樹脂組成物、光学フィルター、および樹脂組成物の製造方法 |
KR101862533B1 (ko) | 2018-04-12 | 2018-05-29 | 주식회사 엘엠에스 | 카메라 모듈에 포함되는 근적외선 컷-오프 필터용 광학물품 및 이를 포함하는 카메라 모듈용 근적외선 컷-오프 필터 |
KR20180113914A (ko) * | 2017-04-07 | 2018-10-17 | 제이에스알 가부시끼가이샤 | 고체 촬상 소자용 조성물, 적외선 차폐막 및 고체 촬상 소자 |
JP2020042235A (ja) * | 2018-09-13 | 2020-03-19 | Jsr株式会社 | 撮像装置、および赤外吸収膜 |
US11112695B2 (en) | 2017-02-09 | 2021-09-07 | Fujifilm Corporation | Photosensitive composition, cured film, optical filter, solid image pickup element, image display device, and infrared sensor |
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TWI675907B (zh) * | 2015-01-21 | 2019-11-01 | 日商Jsr股份有限公司 | 固體攝像裝置 |
WO2018186114A1 (ja) * | 2017-04-07 | 2018-10-11 | Jsr株式会社 | 固体撮像素子用組成物及び固体撮像素子用赤外線遮蔽膜の形成方法 |
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- 2015-12-22 KR KR1020177012532A patent/KR20170099845A/ko not_active Application Discontinuation
- 2015-12-22 JP JP2016566383A patent/JP6702197B2/ja active Active
- 2015-12-22 CN CN201580053503.8A patent/CN107076894B/zh active Active
- 2015-12-25 TW TW104143700A patent/TWI701304B/zh active
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JP2018040955A (ja) * | 2016-09-07 | 2018-03-15 | 株式会社日本触媒 | 樹脂組成物、光学フィルター、および樹脂組成物の製造方法 |
US11112695B2 (en) | 2017-02-09 | 2021-09-07 | Fujifilm Corporation | Photosensitive composition, cured film, optical filter, solid image pickup element, image display device, and infrared sensor |
KR20180113914A (ko) * | 2017-04-07 | 2018-10-17 | 제이에스알 가부시끼가이샤 | 고체 촬상 소자용 조성물, 적외선 차폐막 및 고체 촬상 소자 |
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KR101862533B1 (ko) | 2018-04-12 | 2018-05-29 | 주식회사 엘엠에스 | 카메라 모듈에 포함되는 근적외선 컷-오프 필터용 광학물품 및 이를 포함하는 카메라 모듈용 근적외선 컷-오프 필터 |
JP2020042235A (ja) * | 2018-09-13 | 2020-03-19 | Jsr株式会社 | 撮像装置、および赤外吸収膜 |
Also Published As
Publication number | Publication date |
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CN107076894B (zh) | 2020-01-31 |
TWI701304B (zh) | 2020-08-11 |
JP6702197B2 (ja) | 2020-05-27 |
CN107076894A (zh) | 2017-08-18 |
TW201631058A (zh) | 2016-09-01 |
JPWO2016104491A1 (ja) | 2017-11-24 |
KR20220146660A (ko) | 2022-11-01 |
KR20170099845A (ko) | 2017-09-01 |
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