WO2016103936A1 - Élément d'imagerie à semi-conducteurs et procédé de fabrication d'élément d'imagerie à semi-conducteurs - Google Patents
Élément d'imagerie à semi-conducteurs et procédé de fabrication d'élément d'imagerie à semi-conducteurs Download PDFInfo
- Publication number
- WO2016103936A1 WO2016103936A1 PCT/JP2015/081624 JP2015081624W WO2016103936A1 WO 2016103936 A1 WO2016103936 A1 WO 2016103936A1 JP 2015081624 W JP2015081624 W JP 2015081624W WO 2016103936 A1 WO2016103936 A1 WO 2016103936A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- light shielding
- light
- solid
- shielding film
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title claims description 151
- 238000004519 manufacturing process Methods 0.000 title claims description 73
- 238000000034 method Methods 0.000 title claims description 63
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 230000003287 optical effect Effects 0.000 claims abstract description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 99
- 229910052739 hydrogen Inorganic materials 0.000 claims description 99
- 239000001257 hydrogen Substances 0.000 claims description 99
- 229910052782 aluminium Inorganic materials 0.000 claims description 96
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 96
- 238000005245 sintering Methods 0.000 claims description 94
- 230000008569 process Effects 0.000 claims description 44
- 229910000838 Al alloy Inorganic materials 0.000 claims description 21
- 239000007787 solid Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 39
- 230000000903 blocking effect Effects 0.000 abstract 5
- 239000010408 film Substances 0.000 description 679
- 239000010410 layer Substances 0.000 description 172
- 229910052751 metal Inorganic materials 0.000 description 95
- 239000002184 metal Substances 0.000 description 95
- 239000011229 interlayer Substances 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 17
- 230000006866 deterioration Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 12
- 238000002161 passivation Methods 0.000 description 11
- 230000009467 reduction Effects 0.000 description 10
- 238000012546 transfer Methods 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
Abstract
La présente invention a pour but d'éviter une diminution des propriétés de blocage de lumière d'une partie de blocage de lumière qui bloque la lumière vers une zone de noir optique, tout en supprimant l'épaisseur de la partie de blocage de lumière. Selon l'invention, une partie de blocage de lumière (170), qui est formée sur un substrat semi-conducteur (120) et bloque la lumière vers une zone de noir optique (B), est pourvue d'un film de blocage de lumière en aluminium (Al) supérieur (12) qui présente une épaisseur de film de 50 nm à 125 nm (inclus).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016566011A JP6301500B2 (ja) | 2014-12-24 | 2015-11-10 | 固体撮像素子、および固体撮像素子の製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-261346 | 2014-12-24 | ||
| JP2014261346 | 2014-12-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2016103936A1 true WO2016103936A1 (fr) | 2016-06-30 |
Family
ID=56149970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2015/081624 WO2016103936A1 (fr) | 2014-12-24 | 2015-11-10 | Élément d'imagerie à semi-conducteurs et procédé de fabrication d'élément d'imagerie à semi-conducteurs |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6301500B2 (fr) |
| WO (1) | WO2016103936A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020113762A (ja) * | 2019-01-11 | 2020-07-27 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | イメージセンサー |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0730090A (ja) * | 1993-07-09 | 1995-01-31 | Sony Corp | 固体撮像素子 |
| JPH10335621A (ja) * | 1997-05-27 | 1998-12-18 | Sony Corp | 固体撮像装置とその製造方法 |
| JPH11154741A (ja) * | 1997-11-20 | 1999-06-08 | Matsushita Electron Corp | 固体撮像素子およびその製造方法 |
| JP2004363375A (ja) * | 2003-06-05 | 2004-12-24 | Renesas Technology Corp | 固体撮像素子 |
| JP2006261552A (ja) * | 2005-03-18 | 2006-09-28 | Toyota Motor Corp | 半導体装置及びその製造方法 |
| JP2012104654A (ja) * | 2010-11-10 | 2012-05-31 | Toshiba Corp | 半導体撮像装置 |
| JP2013179224A (ja) * | 2012-02-29 | 2013-09-09 | Sharp Corp | 固体撮像素子の製造方法 |
| WO2014007132A1 (fr) * | 2012-07-05 | 2014-01-09 | ソニー株式会社 | Dispositif d'imagerie à semi-conducteur, son procédé de fabrication, et dispositif électronique |
| JP2014067948A (ja) * | 2012-09-27 | 2014-04-17 | Fujifilm Corp | 固体撮像素子および撮像装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06151794A (ja) * | 1992-10-30 | 1994-05-31 | Matsushita Electron Corp | 固体撮像素子およびその製造方法 |
| JPH08306902A (ja) * | 1995-04-28 | 1996-11-22 | Olympus Optical Co Ltd | 固体撮像装置 |
-
2015
- 2015-11-10 WO PCT/JP2015/081624 patent/WO2016103936A1/fr active Application Filing
- 2015-11-10 JP JP2016566011A patent/JP6301500B2/ja active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0730090A (ja) * | 1993-07-09 | 1995-01-31 | Sony Corp | 固体撮像素子 |
| JPH10335621A (ja) * | 1997-05-27 | 1998-12-18 | Sony Corp | 固体撮像装置とその製造方法 |
| JPH11154741A (ja) * | 1997-11-20 | 1999-06-08 | Matsushita Electron Corp | 固体撮像素子およびその製造方法 |
| JP2004363375A (ja) * | 2003-06-05 | 2004-12-24 | Renesas Technology Corp | 固体撮像素子 |
| JP2006261552A (ja) * | 2005-03-18 | 2006-09-28 | Toyota Motor Corp | 半導体装置及びその製造方法 |
| JP2012104654A (ja) * | 2010-11-10 | 2012-05-31 | Toshiba Corp | 半導体撮像装置 |
| JP2013179224A (ja) * | 2012-02-29 | 2013-09-09 | Sharp Corp | 固体撮像素子の製造方法 |
| WO2014007132A1 (fr) * | 2012-07-05 | 2014-01-09 | ソニー株式会社 | Dispositif d'imagerie à semi-conducteur, son procédé de fabrication, et dispositif électronique |
| JP2014067948A (ja) * | 2012-09-27 | 2014-04-17 | Fujifilm Corp | 固体撮像素子および撮像装置 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020113762A (ja) * | 2019-01-11 | 2020-07-27 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | イメージセンサー |
| JP7479850B2 (ja) | 2019-01-11 | 2024-05-09 | 三星電子株式会社 | イメージセンサー |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6301500B2 (ja) | 2018-03-28 |
| JPWO2016103936A1 (ja) | 2017-08-03 |
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