WO2016101393A1 - Oled显示器件及其制造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000011368 organic material Substances 0.000 claims abstract description 25
- 230000004888 barrier function Effects 0.000 claims description 75
- 238000002347 injection Methods 0.000 claims description 35
- 239000007924 injection Substances 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 23
- 230000005525 hole transport Effects 0.000 claims description 19
- 238000000059 patterning Methods 0.000 claims description 10
- 239000011810 insulating material Substances 0.000 claims description 9
- 230000007547 defect Effects 0.000 abstract description 8
- 230000000903 blocking effect Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
Definitions
- the present invention relates to the field of display technologies, and in particular, to an OLED display device and a method of fabricating the same.
- OLED Organic Light Emitting Diode
- the OLED display device generally includes a substrate, an anode disposed on the substrate, a hole injection layer disposed on the anode, a hole transport layer disposed on the hole injection layer, and a light-emitting layer disposed on the hole transport layer.
- the principle of luminescence of OLED display devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination.
- an OLED display device generally employs an ITO pixel electrode and a metal electrode as anodes and cathodes of the device, respectively.
- electrons and holes are injected from the cathode and the anode to the electron transport layer and the hole transport layer, respectively.
- the holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer, respectively, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, and the latter emits visible light through radiation relaxation.
- the resolution of a display becomes higher, the resolution (ppi) of a pixel increases, and the interval between pixels gradually decreases.
- the efficiency of a light-emitting material for an OLED display device is improved, high luminance can be realized by a low current and a low voltage, so that power consumption can be reduced.
- the luminescent material used for the OLED display device it is possible to emit light with a small amount of current, so a very small amount of current leaking from one pixel to another adjacent pixel may result in the above-described high efficiency.
- the luminescent material emits light, causing adjacent pixels that should not emit light to illuminate frequently.
- leakage emitted light Light emitted due to leakage current is referred to as leakage emitted light. If a leaky emission of light is produced, a color mixture is produced and the color coordinates are changed. Further, when leakage light due to leakage current is generated in a low luminance region, black luminance is increased.
- the method of resolution is to suppress leakage of emitted light.
- the problem of leaking emitted light must be solved without reducing the efficiency of the luminescent material or reducing the resolution of the display device.
- An object of the present invention is to provide an OLED display device capable of suppressing leakage emitted light due to leakage current without reducing the efficiency of the luminescent material or reducing the resolution of the display device, reducing short-circuit defects, and improving the OLED display device. Reliability to improve the display quality of OLED display devices.
- Another object of the present invention is to provide a method for manufacturing an OLED display device, which does not cause damage to the first auxiliary light-emitting layer, reduces interface problems, and can reduce the efficiency of the light-emitting material or reduce the resolution of the display device. In the case of solving the problem of leaking emitted light, reducing short-circuit defects, improving the reliability of the OLED display device, and improving the display quality of the OLED display device.
- an OLED display device comprising:
- a pixel barrier layer disposed on the substrate and between each adjacent two first electrodes; the pixel barrier layer is higher than the first electrode and covers a portion of the upper surface of the first electrode;
- the middle of the pixel barrier layer has a groove extending through the pixel barrier layer; a region defined by each adjacent two pixel barrier layers is a pixel region;
- the material of the pixel barrier layer is an insulating material.
- the OLED organic material layer includes: a first auxiliary light emitting layer, a second auxiliary light emitting layer, and a light emitting layer disposed between the first and second auxiliary light emitting layers.
- the groove has a first auxiliary light-emitting layer disposed on the substrate, a second auxiliary light-emitting layer disposed on the first auxiliary light-emitting layer, and a second portion disposed on the second auxiliary light-emitting layer An electrode; the groove is deep enough to accommodate the first auxiliary light-emitting layer, the second auxiliary light-emitting layer, and the second electrode located therein, so that the second electrode located in the uppermost layer in the groove is still lower than the groove Upper surface.
- the luminescent layer includes a red luminescent layer, a green luminescent layer, and a blue luminescent layer which are sequentially arranged in a loop Floor.
- the first electrode is an anode or a cathode
- the second electrode is a cathode or an anode
- the first auxiliary light-emitting layer includes a hole injection layer and a hole transport layer, or an electron injection layer and an electron transport layer.
- the second auxiliary light-emitting layer includes an electron injection layer and an electron transport layer, or hole injection. Layer and hole transport layer.
- the invention also provides a method for manufacturing an OLED display device, comprising the following steps:
- Step 1 Providing a substrate, forming a first electrode layer on the first substrate, and patterning the first electrode layer to form a plurality of first electrodes spaced apart from each other and arranged in an array;
- Step 2 forming a pixel barrier layer between each adjacent two first electrodes on the substrate, patterning each pixel barrier layer, and forming a groove extending through the pixel barrier layer at a middle portion thereof;
- the pixel barrier layer is higher than the first electrode and covers a portion of the upper surface of the first electrode; the area defined by each adjacent two pixel barrier layers is a pixel region;
- Step 3 sequentially forming a first auxiliary light-emitting layer, a light-emitting layer, and a second auxiliary light-emitting layer on the first electrode and the pixel barrier layer, wherein the first and second auxiliary light-emitting layers are sandwiched between the two
- the luminescent layer constitutes an OLED organic material layer; at the same time, a first auxiliary luminescent layer disposed on the substrate and a second auxiliary luminescent layer disposed on the first auxiliary luminescent layer are sequentially formed in the groove;
- the first and second auxiliary light-emitting layers on the first electrode and the pixel barrier layer and the first and second auxiliary light-emitting layers located in the groove are naturally disconnected at the groove;
- Step 4 forming a second electrode on the second auxiliary light-emitting layer, the second electrode is also naturally disconnected at the groove;
- the depth of the groove is sufficient to accommodate the first auxiliary light-emitting layer, the second auxiliary light-emitting layer, and the second electrode located therein, so that the second electrode located in the uppermost layer in the groove is still lower than the groove surface.
- the material of the pixel barrier layer is an insulating material.
- the light emitting layer includes a red light emitting layer, a green light emitting layer, and a blue light emitting layer which are sequentially arranged in a loop;
- the first electrode is an anode or a cathode, and correspondingly, the second electrode is a cathode or an anode;
- the first auxiliary light-emitting layer includes a hole injection layer and a hole transport layer, or an electron injection layer and an electron transport layer.
- the second auxiliary light-emitting layer includes an electron injection layer and an electron transport layer, or hole injection. Layer and hole transport layer.
- the invention also provides a method for manufacturing an OLED display device, comprising the following steps:
- Step 1 Providing a substrate, forming a first electrode layer on the first substrate, and patterning the first electrode layer to form a plurality of first electrodes spaced apart from each other and arranged in an array;
- Step 2 forming a pixel barrier layer between each adjacent two first electrodes on the substrate, patterning each pixel barrier layer, and forming a groove extending through the pixel barrier layer at a middle portion thereof;
- the pixel barrier layer is higher than the first electrode and covers a portion of the upper surface of the first electrode; the area defined by each adjacent two pixel barrier layers is a pixel region;
- Step 3 sequentially forming a first auxiliary light-emitting layer, a light-emitting layer, and a second auxiliary light-emitting layer on the first electrode and the pixel barrier layer, wherein the first and second auxiliary light-emitting layers are sandwiched between the two
- the luminescent layer constitutes an OLED organic material layer; at the same time, a first auxiliary luminescent layer disposed on the substrate and a second auxiliary luminescent layer disposed on the first auxiliary luminescent layer are sequentially formed in the groove;
- the first and second auxiliary light-emitting layers on the first electrode and the pixel barrier layer and the first and second auxiliary light-emitting layers located in the groove are naturally disconnected at the groove;
- Step 4 forming a second electrode on the second auxiliary light-emitting layer, the second electrode is also naturally disconnected at the groove;
- the depth of the groove is sufficient to accommodate the first auxiliary light-emitting layer, the second auxiliary light-emitting layer, and the second electrode located therein, so that the second electrode located in the uppermost layer in the groove is still lower than the groove surface;
- the material of the pixel barrier layer is an insulating material
- the light emitting layer includes a red light emitting layer, a green light emitting layer, and a blue light emitting layer which are sequentially arranged in a loop;
- the first electrode is an anode or a cathode, and correspondingly, the second electrode is a cathode or an anode;
- the first auxiliary light-emitting layer includes a hole injection layer and a hole transport layer, or an electron injection layer and an electron transport layer.
- the second auxiliary light-emitting layer includes an electron injection layer and an electron transport layer, or hole injection. Layer and hole transport layer.
- an OLED display device can prevent an OLED organic material layer from being broken at the groove by providing a through groove in a middle portion of the pixel barrier layer, without reducing the luminescent material.
- the efficiency of the display device is not reduced or the resolution of the display device is reduced, the leakage of the emitted light due to the leakage current is suppressed, the short-circuit defect is reduced, the reliability of the OLED display device is improved, and the display quality of the OLED display device is improved.
- a method for manufacturing an OLED display device by patterning each pixel barrier layer, forming a recess penetrating through the pixel barrier layer in a middle portion thereof, and sequentially forming a layer in the OLED organic material layer sequentially after forming the pixel barrier layer
- An auxiliary luminescent layer, a luminescent layer, and a second auxiliary luminescent layer, and finally a second electrode formed on the second auxiliary luminescent layer, on the one hand, does not cause damage of the first auxiliary luminescent layer, reduces interface problems, and on the other hand Resolve the problem of leaking emitted light without reducing the efficiency of the luminescent material or reducing the resolution of the display device, reducing the short circuit Depression, improve The reliability of the OLED display device improves the display quality of the OLED display device.
- FIG. 1 is a schematic cross-sectional structural view of an OLED display device of the present invention
- FIG. 2 is a flow chart of a method of fabricating an OLED display device of the present invention.
- the present invention first provides an OLED display device, including:
- first electrodes 200 spaced apart from each other and arranged in an array on the substrate 100;
- a pixel barrier layer 300 disposed on the substrate 100 and located between each adjacent two first electrodes 200; the pixel barrier layer 300 is higher than the first electrode 200 and covers the first electrode 200 a portion of the upper surface; a recess 310 in the middle of each pixel barrier layer 300, the recess 310 extends through the pixel barrier layer 300; the area defined by each adjacent two pixel barrier layers 300 is a pixel region;
- the substrate 100 is preferably a glass substrate.
- the material of the pixel barrier layer 300 is an insulating material, and any suitable insulating material known in the art can be used for the pixel barrier layer 300.
- the OLED organic material layer 400 includes a first auxiliary light emitting layer 401, a second auxiliary light emitting layer 403, and a light emitting layer 402 disposed between the first and second auxiliary light emitting layers 401 and 403.
- the light emitting layer 402 further includes a red light emitting layer 402R, a green light emitting layer 402G, and a blue light emitting layer 402B which are sequentially arranged in a loop.
- the recess 310 further includes: a first auxiliary light emitting layer 401 disposed on the substrate 100, a second auxiliary light emitting layer 403 disposed on the first auxiliary light emitting layer 401, and the second auxiliary light The second electrode 500 on the light emitting layer 403.
- the depth of the groove 310 is sufficient to accommodate the first auxiliary light-emitting layer 401, the second auxiliary light-emitting layer 403, and the second electrode 500 located therein, so that the second electrode 500 located in the uppermost layer in the groove 310 is still low.
- the first electrode 200 may be an anode.
- the second electrode 500 is a cathode
- the first auxiliary light emitting layer 401 includes a hole injection layer and a hole transport layer
- the second auxiliary light emitting layer 403 includes An electron injection layer and an electron transport layer; or the first electrode 200 is a cathode, and correspondingly, the second electrode 500 is an anode, and the first auxiliary light-emitting layer 401 includes an electron injection layer and an electron transport layer
- the second auxiliary light-emitting layer 403 includes a hole injection layer and a hole transport layer.
- the first auxiliary light-emitting layer 401, the second auxiliary light-emitting layer 403, and the second electrode 500 located in the groove 310 and the first electrode 200 and the pixel barrier layer 300 are first.
- the auxiliary light-emitting layer 401, the second auxiliary light-emitting layer 403, and the second electrode 500 are disconnected and disconnected, and the depth of the groove 310 is sufficient for the uppermost second electrode 500 located therein to remain lower than the
- the upper surface of the recess 310 is such that the first auxiliary light-emitting layer 401 is no longer continuous over the entire surface due to the depth difference of the recess 310, but is naturally disconnected at the recess 310, that is, two adjacent pixels.
- the leakage path between the regions is broken by the groove 310, and leakage current generated between the two adjacent first electrodes 200 cannot be conducted through the first auxiliary light-emitting layer 401, so that the efficiency of the light-emitting material can be not reduced or
- the leakage emitted light due to the leakage current is suppressed without reducing the resolution of the display device, the short-circuit defect is reduced, the reliability of the OLED display device is improved, and the display quality of the OLED display device is improved.
- the present invention further provides a method for fabricating an OLED display device, comprising the following steps:
- Step 1 providing a substrate 100, forming a first electrode layer on the first substrate 100, and patterning the first electrode layer to form a plurality of first electrodes 200 spaced apart from each other and arranged in an array .
- the substrate 100 is preferably a glass substrate, and the first electrode 200 may be an anode or a cathode.
- Step 2 forming a pixel barrier layer 300 between each adjacent two first electrodes 200 on the substrate 100, patterning each pixel barrier layer 300, and forming a pixel barrier layer penetrating through the pixel barrier layer A groove 310 of 300.
- the material of the pixel barrier layer 300 is an insulating material.
- the pixel barrier layer 300 is higher than the first electrode 200 and covers a portion of the upper surface of the first electrode 200.
- the function of the pixel blocking layer 300 is to separate the respective first electrodes 200.
- the area defined by each adjacent two pixel barrier layers 300 is one pixel area.
- Step 3 sequentially forming a first auxiliary light-emitting layer 401, a light-emitting layer 402, and a second auxiliary light-emitting layer 403 on the first electrode 200 and the pixel barrier layer 300.
- the first and second auxiliary light-emitting layers 401 and 403 and the light-emitting layer 402 interposed therebetween constitute an OLED organic material layer 400.
- a first auxiliary light-emitting layer 401 disposed on the substrate 100 and a second auxiliary light-emitting layer 403 disposed on the first auxiliary light-emitting layer 401 are sequentially formed in the recess 310.
- First and second auxiliary light-emitting layers 401 and 403 on the first electrode 200 and the pixel barrier layer 300 and first and second auxiliary light-emitting layers 401 and 403 located in the groove 310 in the groove 310 is naturally disconnected.
- the first auxiliary light emitting layer 401 includes a hole injection layer and a hole transport layer
- the second auxiliary light emitting layer 403 includes an electron injection layer and electron transport
- the first auxiliary light-emitting layer 401 includes an electron injection layer and an electron transport layer
- the second auxiliary light-emitting layer 403 includes a hole injection layer and a hole transport layer.
- the light emitting layer 402 includes a red light emitting layer 402R, a green light emitting layer 402G, and a blue light emitting layer 402B which are sequentially arranged in a loop.
- Step 4 forming a second electrode 500 on the second auxiliary light-emitting layer 403, and the second electrode 500 is also naturally disconnected at the groove 310.
- the depth of the groove 310 is sufficient to accommodate the first auxiliary light-emitting layer 401, the second auxiliary light-emitting layer 403, and the second electrode 500 located therein, so as to be located at the uppermost second electrode in the groove 310. 500 is still below the upper surface of the recess 310.
- the second electrode 500 is a cathode; and in the case where the first electrode 200 is a cathode, the second electrode 500 is an anode.
- each pixel barrier layer 300 is patterned, a recess 310 is formed in the middle portion of the pixel barrier layer 300, and an OLED organic material is sequentially formed after forming the pixel barrier layer 300.
- the first auxiliary light-emitting layer 401, the light-emitting layer 402, and the second auxiliary light-emitting layer 403 in the layer 400, and finally the second electrode 500 are formed on the second auxiliary light-emitting layer 403.
- the first auxiliary light-emitting layer 401 is no longer continuous over the entire surface due to the depth difference of the groove 310, but is naturally disconnected at the groove 310, that is, a leakage path between two adjacent pixel regions.
- the first auxiliary light-emitting layer 401 Disconnected by the groove 310, leakage current generated between two adjacent first electrodes 200 cannot be conducted through the first auxiliary light-emitting layer 401, so that the efficiency of the light-emitting material can be reduced or the resolution of the display device can be reduced.
- the rate the leakage emitted light due to the leakage current is suppressed, the short-circuit defect is reduced, the reliability of the OLED display device is improved, and the display quality of the OLED display device is improved; on the other hand, the first auxiliary light-emitting layer 401 is blocked at the pixel.
- the first auxiliary light-emitting layer 401 is not damaged, and the first auxiliary light-emitting layer 401, the light-emitting layer 402, the second auxiliary light-emitting layer 403, and the second electrode 500 are continuously formed, which can reduce the interface problem.
- the OLED display device of the present invention can prevent the OLED organic material layer from being disconnected at the groove by providing a through groove in the middle of the pixel barrier layer, without reducing the efficiency of the luminescent material or
- the resolution of the display device is lowered, the leakage emitted light due to the leakage current is suppressed, the short-circuit defect is reduced, the reliability of the OLED display device is improved, and the display quality of the OLED display device is improved; and the manufacturing method of the OLED display device of the present invention, Forming a barrier layer of each pixel, forming a recess penetrating through the pixel barrier layer in a middle portion thereof, and sequentially forming a first auxiliary light-emitting layer and a light-emitting layer in the OLED organic material layer in sequence after forming the pixel barrier layer Forming a second electrode on the second auxiliary light-emitting layer, and finally forming a second electrode on the second auxiliary light-emitting layer, on the one hand, does not cause damage
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Abstract
一种OLED显示器件及其制造方法。该OLED显示器件包括：基板（100）；设于基板（100）上的多个相互间隔且呈阵列式排布的第一电极（200）；设于基板（100）上且位于每相邻两个第一电极（200）之间的像素阻隔层（300）；每一像素阻隔层（300）的中部具有一凹槽（310），该凹槽（310）贯穿所述像素阻隔层（300）；设于所述第一电极（200）与像素阻隔层（300）上的OLED有机材料层（400）；所述OLED有机材料层（400）在所述凹槽（310）处断开；及设于所述OLED有机材料层（400）上的第二电极（500）；所述第二电极（500）同样在所述凹槽（310）处断开。该OLED显示器件能够抑制因泄露电流而产生的泄露发射光，减少短路缺陷，提高OLED显示器件的可靠性，改善OLED显示器件的显示质量。
Description
本发明涉及显示技术领域，尤其涉及一种OLED显示器件及其制造方法。
近年来，液晶显示(Liquid Crystal Display，LCD)器和有机发光二极管(Organic Light Emitting Diode，OLED)显示器等平板显示器已经逐步取代CRT显示器，成为显示器市场中的主流产品。其中，OLED显示器具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示器。
OLED显示器件通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层、及设于电子注入层上的阴极。OLED显示器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED显示器件通常采用ITO像素电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
近年来，随着显示器的分辨率变高，像素的分辨率(ppi)增加，而像素之间的间隔逐渐减小。另外，近来随着用于OLED显示器件的发光材料的效率提高，能够通过低电流和低电压实现高亮度，从而能够降低功耗。然而，也因为用于OLED显示器件的发光材料的高效率，在通过少量电流的情况下即可发光，所以由从一个像素泄漏到另一个相邻像素的极少量的电流就可能导致上述高效率的发光材料发光，造成不应发光的相邻像素常常会发光。因泄漏电流而发射的光被称为泄漏发射光。如果产生了泄漏发射光，就会产生颜色混合并改变颜色坐标。此外，当由于泄漏电流而导致的泄漏发光在低亮度区中产生时，黑色亮度会增加。
针对上述问题，可以采用降低发光材料的效率或者降低显示装置的分
辨率的方法来抑制泄漏发射光。然而，由于用户对于低功率/高分辨率的产品的需求不断增加，因而，必须在不降低发光材料的效率或者不降低显示装置的分辨率的情况下解决泄漏发射光的问题。
发明内容
本发明的目的在于提供一种OLED显示器件，能够在不降低发光材料的效率或者不降低显示装置的分辨率的情况下抑制因泄露电流而产生的泄露发射光，减少短路缺陷，提高OLED显示器件的可靠性，改善OLED显示器件的显示质量。
本发明的目的还在于提供一种OLED显示器件的制造方法，该制造方法不会造成第一辅助发光层的破坏，减少界面问题，能够在不降低发光材料的效率或者不降低显示装置的分辨率的情况下解决泄漏发射光的问题，减少短路缺陷，提高OLED显示器件的可靠性，改善OLED显示器件的显示质量。
为实现上述目的，本发明提供一种OLED显示器件，包括：
基板；
设于所述基板上的多个相互间隔且呈阵列式排布的第一电极；
设于所述基板上且位于每相邻两个第一电极之间的像素阻隔层；所述像素阻隔层高出所述第一电极，并覆盖所述第一电极的部分上表面；每一像素阻隔层的中部具有一凹槽，该凹槽贯穿所述像素阻隔层；每相邻两个像素阻隔层限定出的区域为一个像素区域；
设于所述第一电极与像素阻隔层上的OLED有机材料层；所述OLED有机材料层在所述凹槽处断开；
及设于所述OLED有机材料层上的第二电极；所述第二电极同样在所述凹槽处断开。
所述像素阻隔层的材料为绝缘材料。
所述OLED有机材料层包括：第一辅助发光层、第二辅助发光层、及设于第一、第二辅助发光层之间的发光层。
所述凹槽内具有：设于所述基板上的第一辅助发光层、设于所述第一辅助发光层上的第二辅助发光层、设于所述第二辅助发光层上的第二电极；所述凹槽的深度足够容纳位于其内的第一辅助发光层、第二辅助发光层、及第二电极，从而位于所述凹槽内最上层的第二电极仍低于该凹槽的上表面。
所述发光层包括依次循环排列的红色发光层、绿色发光层、蓝色发光
层。
所述第一电极为阳极或阴极，相应的，所述第二电极为阴极或阳极。
所述第一辅助发光层包括空穴注入层与空穴传输层、或电子注入层与电子传输层，相应的，所述第二辅助发光层包括电子注入层与电子传输层、或空穴注入层与空穴传输层。
本发明还提供一种OLED显示器件的制造方法，包括以下步骤：
步骤1、提供一基板，在所述第一基板上形成第一电极层，对所述第一电极层进行图案化处理，形成多个相互间隔且呈阵列式排布的第一电极；
步骤2、在所述基板上于每相邻两个第一电极之间形成一个像素阻隔层，对每一像素阻隔层进行图案化处理，在其中部形成贯穿所述像素阻隔层的凹槽；
所述像素阻隔层高出所述第一电极，并覆盖所述第一电极的部分上表面；每相邻两个像素阻隔层限定出的区域为一个像素区域；
步骤3、在所述第一电极与像素阻隔层上依次形成第一辅助发光层、发光层、及第二辅助发光层，所述第一、第二辅助发光层及夹设于二者之间的发光层构成OLED有机材料层；同时在所述凹槽内依次形成设于所述基板上的第一辅助发光层、设于所述第一辅助发光层上的第二辅助发光层；
位于所述第一电极与像素阻隔层上的第一、第二辅助发光层与位于所述凹槽内的第一、第二辅助发光层在所述凹槽处自然断开；
步骤4、在所述第二辅助发光层上形成第二电极，所述第二电极同样在所述凹槽处自然断开；
所述凹槽的深度足够容纳位于其内的第一辅助发光层、第二辅助发光层、及第二电极，从而位于所述凹槽内最上层的第二电极仍低于该凹槽的上表面。
所述像素阻隔层的材料为绝缘材料。
所述发光层包括依次循环排列的红色发光层、绿色发光层、蓝色发光层；
所述第一电极为阳极或阴极，相应的，所述第二电极为阴极或阳极；
所述第一辅助发光层包括空穴注入层与空穴传输层、或电子注入层与电子传输层，相应的，所述第二辅助发光层包括电子注入层与电子传输层、或空穴注入层与空穴传输层。
本发明还提供一种OLED显示器件的制造方法，包括以下步骤：
步骤1、提供一基板，在所述第一基板上形成第一电极层，对所述第一电极层进行图案化处理，形成多个相互间隔且呈阵列式排布的第一电极；
步骤2、在所述基板上于每相邻两个第一电极之间形成一个像素阻隔层，对每一像素阻隔层进行图案化处理，在其中部形成贯穿所述像素阻隔层的凹槽；
所述像素阻隔层高出所述第一电极，并覆盖所述第一电极的部分上表面；每相邻两个像素阻隔层限定出的区域为一个像素区域；
步骤3、在所述第一电极与像素阻隔层上依次形成第一辅助发光层、发光层、及第二辅助发光层，所述第一、第二辅助发光层及夹设于二者之间的发光层构成OLED有机材料层；同时在所述凹槽内依次形成设于所述基板上的第一辅助发光层、设于所述第一辅助发光层上的第二辅助发光层；
位于所述第一电极与像素阻隔层上的第一、第二辅助发光层与位于所述凹槽内的第一、第二辅助发光层在所述凹槽处自然断开；
步骤4、在所述第二辅助发光层上形成第二电极，所述第二电极同样在所述凹槽处自然断开；
所述凹槽的深度足够容纳位于其内的第一辅助发光层、第二辅助发光层、及第二电极，从而位于所述凹槽内最上层的第二电极仍低于该凹槽的上表面；
其中，所述像素阻隔层的材料为绝缘材料；
其中，所述发光层包括依次循环排列的红色发光层、绿色发光层、蓝色发光层；
所述第一电极为阳极或阴极，相应的，所述第二电极为阴极或阳极；
所述第一辅助发光层包括空穴注入层与空穴传输层、或电子注入层与电子传输层，相应的，所述第二辅助发光层包括电子注入层与电子传输层、或空穴注入层与空穴传输层。
本发明的有益效果：本发明提供的一种OLED显示器件，通过在像素阻隔层的中部设置一贯穿的凹槽，使OLED有机材料层在所述凹槽处断开，能够在不降低发光材料的效率或者不降低显示装置的分辨率的情况下抑制因泄露电流而产生的泄露发射光，减少短路缺陷，提高OLED显示器件的可靠性，改善OLED显示器件的显示质量；本发明提供的一种OLED显示器件的制造方法，通过对每一像素阻隔层进行图案化处理，在其中部形成贯穿所述像素阻隔层的凹槽，并在形成像素阻隔层后依次连续形成OLED有机材料层中的第一辅助发光层、发光层、与第二辅助发光层，最后在第二辅助发光层上形成第二电极，一方面不会造成第一辅助发光层的破坏，减少界面问题，另一方面能够在不降低发光材料的效率或者不降低显示装置的分辨率的情况下解决泄漏发射光的问题，减少短路缺陷，提高
OLED显示器件的可靠性，改善OLED显示器件的显示质量。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的OLED显示器件的剖面结构示意图；
图2为本发明的OLED显示器件的制造方法的流程图。
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明首先提供一种OLED显示器件，包括：
基板100；
设于所述基板100上的多个相互间隔且呈阵列式排布的第一电极200；
设于所述基板100上且位于每相邻两个第一电极200之间的像素阻隔层300；所述像素阻隔层300高出所述第一电极200，并覆盖所述第一电极200的部分上表面；每一像素阻隔层300的中部具有一凹槽310，该凹槽310贯穿所述像素阻隔层300；每相邻两个像素阻隔层300限定出的区域为一个像素区域；
设于所述第一电极200与像素阻隔层300上的OLED有机材料层400；该OLED有机材料层400在所述凹槽310处断开；
及设于所述OLED有机材料层400上的第二电极500；所述第二电极500同样在所述凹槽310处断开。
具体的，所述基板100优选为玻璃基板。
所述像素阻隔层300的材料为绝缘材料，本领域已知的任何适当的绝缘材料均可以用于该像素阻隔层300。
所述OLED有机材料层400包括：第一辅助发光层401、第二辅助发光层403、及设于第一、第二辅助发光层401、403之间的发光层402。所述发光层402进一步包括依次循环排列的红色发光层402R、绿色发光层402G、与蓝色发光层402B。
所述凹槽310内进一步具有：设于所述基板100上的第一辅助发光层401、设于所述第一辅助发光层401上的第二辅助发光层403、设于所述第二辅助发光层403上的第二电极500。所述凹槽310的深度足够容纳位于其内的第一辅助发光层401、第二辅助发光层403、及第二电极500，从而位于所述凹槽310内最上层的第二电极500仍低于该凹槽310的上表面。
所述第一电极200可为阳极，相应的，所述第二电极500为阴极，所述第一辅助发光层401包括空穴注入层与空穴传输层，所述第二辅助发光层403包括电子注入层与电子传输层；或所述第一电极200为阴极，相应的，所述第二电极500为阳极，所述第一辅助发光层401包括电子注入层与电子传输层，所述第二辅助发光层403包括空穴注入层与空穴传输层。
值得一提的是，位于所述凹槽310内的第一辅助发光层401、第二辅助发光层403、及第二电极500与位于所述第一电极200与像素阻隔层300上的第一辅助发光层401、第二辅助发光层403、及第二电极500是断开、不相连的，且所述凹槽310的深度足够使位于其内的最上层的第二电极500仍低于该凹槽310的上表面，使得第一辅助发光层401由于所述凹槽310的深度差，不再整面连续，而是在所述凹槽310处自然断开，即相邻的两个像素区域之间的漏电路径被所述凹槽310断开，两个相邻的第一电极200之间产生的泄漏电流无法通过第一辅助发光层401传导，从而能够在不降低发光材料的效率或者不降低显示装置的分辨率的情况下抑制因泄露电流而产生的泄露发射光，减少短路缺陷，提高OLED显示器件的可靠性，改善OLED显示器件的显示质量。
请参阅图2，并结合图1，本发明还提供一种OLED显示器件的制造方法，包括以下步骤：
步骤1、提供一基板100，在所述第一基板100上形成第一电极层，对所述第一电极层进行图案化处理，形成多个相互间隔且呈阵列式排布的第一电极200。
具体的，所述基板100优选为玻璃基板，所述第一电极200可为阳极或阴极。
步骤2、在所述基板100上于每相邻两个第一电极200之间形成一个像素阻隔层300，对每一像素阻隔层300进行图案化处理，在其中部形成贯穿所述像素阻隔层300的凹槽310。
具体的，所述像素阻隔层300的材料为绝缘材料。
所述像素阻隔层300高出所述第一电极200，并覆盖所述第一电极200的部分上表面。所述像素阻隔层300的作用是将各个第一电极200分隔开，
且每相邻两个像素阻隔层300限定出的区域为一个像素区域。
步骤3、在所述第一电极200与像素阻隔层300上依次形成第一辅助发光层401、发光层402、及第二辅助发光层403。所述第一、第二辅助发光层401、403及夹设于二者之间的发光层402构成OLED有机材料层400。同时在所述凹槽310内依次形成设于所述基板100上的第一辅助发光层401、设于所述第一辅助发光层401上的第二辅助发光层403。
位于所述第一电极200与像素阻隔层300上的第一、第二辅助发光层401、403与位于所述凹槽310内的第一、第二辅助发光层401、403在所述凹槽310处自然断开。
具体的，在所述第一电极200为阳极的情况下，所述第一辅助发光层401包括空穴注入层与空穴传输层，所述第二辅助发光层403包括电子注入层与电子传输层；在所述第一电极200为阴极的情况下，所述第一辅助发光层401包括电子注入层与电子传输层，所述第二辅助发光层403包括空穴注入层与空穴传输层。
所述发光层402包括依次循环排列的红色发光层402R、绿色发光层402G、与蓝色发光层402B。
步骤4、在所述第二辅助发光层403上形成第二电极500，所述第二电极500同样在所述凹槽310处自然断开。
进一步的，所述凹槽310的深度足够容纳位于其内的第一辅助发光层401、第二辅助发光层403、及第二电极500，从而位于所述凹槽310内最上层的第二电极500仍低于该凹槽310的上表面。
在所述第一电极200为阳极的情况下，所述第二电极500为阴极；在所述第一电极200为阴极的情况下，所述第二电极500为阳极。
上述OLED显示器件的制造方法，对每一像素阻隔层300进行图案化处理，在其中部形成贯穿所述像素阻隔层300的凹槽310，并在形成像素阻隔层300后依次连续形成OLED有机材料层400中的第一辅助发光层401、发光层402、与第二辅助发光层403，最后在第二辅助发光层403上形成第二电极500。一方面所述第一辅助发光层401由于凹槽310的深度差，不再整面连续，而是在所述凹槽310处自然断开，即相邻的两个像素区域之间的漏电路径被所述凹槽310断开，两个相邻的第一电极200之间产生的泄漏电流无法通过第一辅助发光层401传导，从而能够在不降低发光材料的效率或者不降低显示装置的分辨率的情况下抑制因泄露电流而产生的泄露发射光，减少短路缺陷，提高OLED显示器件的可靠性，改善OLED显示器件的显示质量；另一方面，所述第一辅助发光层401在像素阻隔层300
后形成，不会造成该第一辅助发光层401的破坏，且所述第一辅助发光层401、发光层402、第二辅助发光层403、与第二电极500连续形成，可减少界面问题。
综上所述，本发明的OLED显示器件，通过在像素阻隔层的中部设置一贯穿的凹槽，使OLED有机材料层在所述凹槽处断开，能够在不降低发光材料的效率或者不降低显示装置的分辨率的情况下抑制因泄露电流而产生的泄露发射光，减少短路缺陷，提高OLED显示器件的可靠性，改善OLED显示器件的显示质量；本发明的OLED显示器件的制造方法，通过对每一像素阻隔层进行图案化处理，在其中部形成贯穿所述像素阻隔层的凹槽，并在形成像素阻隔层后依次连续形成OLED有机材料层中的第一辅助发光层、发光层、与第二辅助发光层，最后在第二辅助发光层上形成第二电极，一方面不会造成第一辅助发光层的破坏，减少界面问题，另一方面能够在不降低发光材料的效率或者不降低显示装置的分辨率的情况下解决泄漏发射光的问题，减少短路缺陷，提高OLED显示器件的可靠性，改善OLED显示器件的显示质量。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (11)
- 一种OLED显示器件，包括：基板；设于所述基板上的多个相互间隔且呈阵列式排布的第一电极；设于所述基板上且位于每相邻两个第一电极之间的像素阻隔层；所述像素阻隔层高出所述第一电极，并覆盖所述第一电极的部分上表面；每一像素阻隔层的中部具有一凹槽，该凹槽贯穿所述像素阻隔层；每相邻两个像素阻隔层限定出的区域为一个像素区域；设于所述第一电极与像素阻隔层上的OLED有机材料层；所述OLED有机材料层在所述凹槽处断开；及设于所述OLED有机材料层上的第二电极；所述第二电极同样在所述凹槽处断开。
- 如权利要求1所述的OLED显示器件，其中，所述像素阻隔层的材料为绝缘材料。
- 如权利要求1所述的OLED显示器件，其中，所述OLED有机材料层包括：第一辅助发光层、第二辅助发光层、及设于第一、第二辅助发光层之间的发光层。
- 如权利要求3所述的OLED显示器件，其中，所述凹槽内具有：设于所述基板上的第一辅助发光层、设于所述第一辅助发光层上的第二辅助发光层、设于所述第二辅助发光层上的第二电极；所述凹槽的深度足够容纳位于其内的第一辅助发光层、第二辅助发光层、及第二电极，从而位于所述凹槽内最上层的第二电极仍低于该凹槽的上表面。
- 如权利要求3所述的OLED显示器件，其中，所述发光层包括依次循环排列的红色发光层、绿色发光层、蓝色发光层。
- 如权利要求3所述的OLED显示器件，其中，所述第一电极为阳极或阴极，相应的，所述第二电极为阴极或阳极。
- 如权利要求6所述的OLED显示器件，其中，所述第一辅助发光层包括空穴注入层与空穴传输层、或电子注入层与电子传输层，相应的，所述第二辅助发光层包括电子注入层与电子传输层、或空穴注入层与空穴传输层。
- 一种OLED显示器件的制造方法，包括以下步骤：步骤1、提供一基板，在所述第一基板上形成第一电极层，对所述第一 电极层进行图案化处理，形成多个相互间隔且呈阵列式排布的第一电极；步骤2、在所述基板上于每相邻两个第一电极之间形成一个像素阻隔层，对每一像素阻隔层进行图案化处理，在其中部形成贯穿所述像素阻隔层的凹槽；所述像素阻隔层高出所述第一电极，并覆盖所述第一电极的部分上表面；每相邻两个像素阻隔层限定出的区域为一个像素区域；步骤3、在所述第一电极与像素阻隔层上依次形成第一辅助发光层、发光层、及第二辅助发光层，所述第一、第二辅助发光层及夹设于二者之间的发光层构成OLED有机材料层；同时在所述凹槽内依次形成设于所述基板上的第一辅助发光层、设于所述第一辅助发光层上的第二辅助发光层；位于所述第一电极与像素阻隔层上的第一、第二辅助发光层与位于所述凹槽内的第一、第二辅助发光层在所述凹槽处自然断开；步骤4、在所述第二辅助发光层上形成第二电极，所述第二电极同样在所述凹槽处自然断开；所述凹槽的深度足够容纳位于其内的第一辅助发光层、第二辅助发光层、及第二电极，从而位于所述凹槽内最上层的第二电极仍低于该凹槽的上表面。
- 如权利要求8所述的OLED显示器件的制造方法，其中，所述像素阻隔层的材料为绝缘材料。
- 如权利要求8所述的OLED显示器件的制造方法，其中，所述发光层包括依次循环排列的红色发光层、绿色发光层、蓝色发光层；所述第一电极为阳极或阴极，相应的，所述第二电极为阴极或阳极；所述第一辅助发光层包括空穴注入层与空穴传输层、或电子注入层与电子传输层，相应的，所述第二辅助发光层包括电子注入层与电子传输层、或空穴注入层与空穴传输层。
- 一种OLED显示器件的制造方法，包括以下步骤：步骤1、提供一基板，在所述第一基板上形成第一电极层，对所述第一电极层进行图案化处理，形成多个相互间隔且呈阵列式排布的第一电极(200)；步骤2、在所述基板上于每相邻两个第一电极之间形成一个像素阻隔层，对每一像素阻隔层进行图案化处理，在其中部形成贯穿所述像素阻隔层的凹槽；所述像素阻隔层高出所述第一电极，并覆盖所述第一电极的部分上表面；每相邻两个像素阻隔层限定出的区域为一个像素区域；步骤3、在所述第一电极与像素阻隔层上依次形成第一辅助发光层、发光层、及第二辅助发光层，所述第一、第二辅助发光层及夹设于二者之间的发光层构成OLED有机材料层；同时在所述凹槽内依次形成设于所述基板上的第一辅助发光层、设于所述第一辅助发光层上的第二辅助发光层；位于所述第一电极与像素阻隔层上的第一、第二辅助发光层与位于所述凹槽内的第一、第二辅助发光层在所述凹槽处自然断开；步骤4、在所述第二辅助发光层上形成第二电极，所述第二电极同样在所述凹槽处自然断开；所述凹槽的深度足够容纳位于其内的第一辅助发光层、第二辅助发光层、及第二电极，从而位于所述凹槽内最上层的第二电极仍低于该凹槽的上表面；其中，所述像素阻隔层的材料为绝缘材料；其中，所述发光层包括依次循环排列的红色发光层、绿色发光层、蓝色发光层；所述第一电极为阳极或阴极，相应的，所述第二电极为阴极或阳极；所述第一辅助发光层包括空穴注入层与空穴传输层、或电子注入层与电子传输层，相应的，所述第二辅助发光层包括电子注入层与电子传输层、或空穴注入层与空穴传输层。
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