WO2016095307A1 - 阵列基板及显示装置 - Google Patents

阵列基板及显示装置 Download PDF

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Publication number
WO2016095307A1
WO2016095307A1 PCT/CN2015/070909 CN2015070909W WO2016095307A1 WO 2016095307 A1 WO2016095307 A1 WO 2016095307A1 CN 2015070909 W CN2015070909 W CN 2015070909W WO 2016095307 A1 WO2016095307 A1 WO 2016095307A1
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WIPO (PCT)
Prior art keywords
thin film
film transistor
array substrate
metal line
display device
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Ceased
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PCT/CN2015/070909
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English (en)
French (fr)
Inventor
明星
申智渊
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/418,189 priority Critical patent/US9836155B2/en
Publication of WO2016095307A1 publication Critical patent/WO2016095307A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
    • H04N13/30—Image reproducers
    • H04N13/332—Displays for viewing with the aid of special glasses or head-mounted displays [HMD]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04107—Shielding in digitiser, i.e. guard or shielding arrangements, mostly for capacitive touchscreens, e.g. driven shields, driven grounds

Definitions

  • the present invention relates to the field of display technologies, and in particular to an array substrate and a display device.
  • liquid crystal displays have become the most common display devices.
  • capacitive touch screens are also widely used in various electronic products such as mobile phones and tablet computers.
  • the more common capacitive touch screens are OGS (One glass solution), on-cell and in-cell.
  • OGS One glass solution
  • on-cell and in-cell are the more common capacitive touch screens.
  • in-cell technology has the advantages of lighter weight, better light transmission and more stable structure than OGS technology and on-cell technology due to its manufacturing process advantages.
  • the inventors have found that at least the following technical problems exist in the prior art: in a liquid crystal display using in-cell technology, at least an additional addressing line and a corresponding insulating layer are required.
  • PEP photo engraving process
  • An object of the present invention is to provide an array substrate and a display device to solve the technical problem that the manufacturing process of the array substrate is too complicated in the existing in-cell technology.
  • the present invention provides an array substrate comprising a plurality of pixel units, each of which is provided with a thin film transistor (TFT);
  • TFT thin film transistor
  • the array substrate further includes a plurality of common electrodes and a plurality of addressing lines, each of the addressing lines being connected to a corresponding common electrode;
  • the common electrode is configured to provide a common voltage for the corresponding pixel unit, and is also used to generate a touch signal;
  • the address line is formed by a connection of a first metal line and a second metal line, the first metal line being in the same layer as a gate of the thin film transistor, the second metal line and a source of the thin film transistor The pole and drain are on the same layer.
  • the array substrate further includes a plurality of scan lines and a plurality of data lines;
  • the first metal line is located directly below the data line.
  • first metal wire and the second metal wire are connected by a connecting member, and the first metal wire and the second metal wire are respectively connected to the connecting component through a via hole.
  • the connecting member is located in the same layer as the Low Temperature Poly-Silicon (LTPS) in the thin film transistor.
  • LTPS Low Temperature Poly-Silicon
  • the thin film transistor is a top gate type thin film transistor.
  • a light shielding layer is disposed under the LTPS and the connecting member in the thin film transistor.
  • first metal line and the second metal line are directly connected through a via.
  • one of the common electrodes corresponds to one or more of the pixel units.
  • the present invention also provides a display device comprising a color filter substrate and the above array substrate.
  • the display device is a Fringe Field Switching (FS) liquid crystal display.
  • FFS Fringe Field Switching
  • the present invention has the following beneficial effects:
  • the first metal line and the second metal line are connected to each other to form an address line for transmitting the touch signal.
  • the original scan line and the data line can be avoided, so that the line design of the scan line and the data line is not affected.
  • the gates of the first metal lines, the scan lines, and the thin film transistors may be formed synchronously in the same patterning process, and the sources and drains of the second metal lines, the data lines, and the thin film transistors may also be Synchronous formation in the same patterning process eliminates the need to separately increase the number of patterning processes for forming the address lines, simplifying the fabrication process of the array substrate.
  • FIG. 1 is a schematic plan view of an array substrate according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic cross-sectional view of an array substrate according to Embodiment 1 of the present invention.
  • FIG. 3 is a schematic plan view of an array substrate according to Embodiment 2 of the present invention.
  • FIG. 4 is a schematic cross-sectional view of an array substrate according to Embodiment 2 of the present invention.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • an embodiment of the present invention provides an array substrate including a plurality of pixel units, and each of the pixel units is provided with a thin film transistor 1 and a pixel electrode 2.
  • the thin film transistor 1 in this embodiment is a top gate type thin film transistor.
  • the channel of the thin film transistor 1 is formed using LTPS in this embodiment.
  • LTPS Compared to conventional amorphous silicon ( ⁇ -Si), LTPS has higher carrier mobility, thus achieving higher resolution and lower power consumption, and the integration of devices on the array substrate is also more high.
  • the gate 101 is located above the LTPS 102, and an insulating layer 32 is disposed between the gate 101 and the LTPS 102.
  • An insulating layer 33 is disposed above the gate electrode 101.
  • the source 103 and the drain 104 are disposed on the insulating layer 33, and the source 103 and the drain 104 are connected to the LTPS 102 through the via 41.
  • the pixel electrode 2 and the drain electrode 104 are connected by a via hole 42 penetrating through the insulating layers 34 and 35.
  • the array substrate provided by the embodiment of the invention further includes a plurality of common electrodes 6 and a plurality of addressing lines, each of which is connected to the corresponding common electrode 6.
  • the address line is formed by connecting the first metal line 51 and the second metal line 52.
  • the first metal line 51 is in the same layer as the gate 101 of the thin film transistor 1, and the second metal line 52 and the source of the thin film transistor 1 are 103.
  • the drain 104 is located in the same layer.
  • the array substrate can adopt display and touch time-sharing scanning in the application: when displaying an image, the common electrode 6 provides a common voltage for the corresponding pixel unit, so that an electric field is formed between the common electrode 6 and the pixel electrode 2;
  • the common electrode 6 serves as a touch sensor for generating a touch signal.
  • one common electrode 6 may correspond to one or more pixel units, and the shape of the common electrode 6 is generally rectangular, but may be set to other shapes according to actual conditions.
  • the array substrate provided by the embodiment of the invention further includes a plurality of scan lines 7 and a plurality of data lines 8.
  • the first metal line 51 is located directly below the data line 8. Further, the end of the first metal wire 51 extends laterally beyond the data line 8, and the second metal wire 52 is connected to the first metal wire 51 at the extension and across the scanning line 7.
  • the original scanning line 7 and the data line 8 can be avoided, so that the line design of the scanning line 7 and the data line 8 is not affected.
  • the first metal line 51 is located directly below the data line 8, such that the orthographic projection of the first metal line 51 substantially coincides with the data line 8, and the first metal line 51 and the data line 8 can be colored by the color filter substrate. The same black matrix on the occlusion.
  • the width of the first metal line 51 and the data line 8 may be slightly different.
  • the second metal lines 52 are used only across the scan lines 7, so the first metal lines 51 and the data lines 8 are the same black.
  • the matrix occlusion enables most of the addressing lines to be blocked by the original black matrix, so that the aperture ratio of the liquid crystal display is hardly affected by the addressing lines.
  • the first metal wire 51 and the second metal wire 52 are connected by a connecting member 53.
  • the connecting member 53 is an LTPS, and the connecting member 53 is located in the same layer as the LTPS 102 in the thin film transistor 1.
  • the first metal wire 51 and the connection member 53 are connected by a via hole 43 penetrating the insulating layer 32, and the second metal wire 52 and the connection member 53 are connected by a via hole 44 penetrating the insulating layers 32 and 33.
  • the common electrode 6 is connected to the second metal line 52 of the address line through a via 45 penetrating the insulating layer 34.
  • an insulating layer 31 and a light shielding layer 9 are provided under the LTPS 102 and the connection member 53 in the thin film transistor 1, and the light shielding layer 9 is preferably formed of a metal material.
  • the light shielding layer 9 can prevent the channel region of the thin film transistor 1 and the connecting member 53 from being exposed to light generated by the backlight, causing a problem that the thin film transistor 1 or the address line generates an interference signal.
  • the first metal line 51, the scan line 7, and the gate electrode 101 of the thin film transistor 1 may be simultaneously formed in the same patterning process, and the second metal line 52 and the data line 8 are formed.
  • the source 103 and the drain 104 of the thin film transistor 1 can be formed synchronously in the same patterning process, and the connection member 53 and the LTPS 102 of the thin film transistor 1 can also be formed synchronously in the same patterning process. Therefore, it is not necessary to increase the number of patterning processes for forming the address lines alone, the manufacturing process of the array substrate is simplified, and the thickness of the array substrate is not increased by the address lines.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • the embodiment is substantially the same as the first embodiment, except that in the embodiment, the first metal wire 51 and the second metal wire 52 pass through the through hole of the insulating layer 33. 46 is directly connected.
  • the connecting member and the light shielding layer under the connecting member can be omitted.
  • the address line in this embodiment is completely connected by the first metal line 51 and the second metal line 52, that is, the address line is completely formed of a metal material, so the touch signal transmitted in the address line is also more Stable and reliable.
  • Embodiment 3 is a diagrammatic representation of Embodiment 3
  • the embodiment of the invention provides a display device, which can be a display device with a touch function, such as a mobile phone or a tablet computer, and implements a touch circuit by using an in-cell technology.
  • the display device includes a color filter substrate and the array substrate provided in the first embodiment or the second embodiment.
  • the display device is preferably a Fringe Field Switching (FS) liquid crystal display.
  • FFS Fringe Field Switching
  • the core technical characteristics are: through the electric field generated by the edge of the slit-shaped pixel electrode in the same plane, the slit-shaped electrode and all the aligned liquid crystal molecules directly above the electrode can be rotated in a plane, thereby improving the transparency of the liquid crystal layer. Light efficiency. FFS technology can improve the picture quality of liquid crystal display, with high resolution, high transmittance, low power consumption, wide viewing angle, high aperture ratio, low chromatic aberration, no squeeze water ripple.
  • the display device provided by the embodiment of the present invention has the same technical features as the array substrate provided in the first embodiment or the second embodiment of the present invention, so that the same technical problem can be solved and the same technical effect can be achieved.

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  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
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  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Human Computer Interaction (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Signal Processing (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种阵列基板及具有该阵列基板的显示装置。该阵列基板包括多个像素单元、多条公共电极（6）和多条寻址线。每个像素单元中设置有薄膜晶体管（1）。寻址线由第一金属线（51）和第二金属线（52）连接形成，第一金属线（51）与薄膜晶体管（1）的栅极（101）位于同一图层，第二金属线（52）与薄膜晶体管（1）的源极（103）、漏极（104）位于同一图层。该结构解决了现有的in-cell技术中，阵列基板的制造过程过于复杂的技术问题。

Description

阵列基板及显示装置
本申请要求享有2014年12月19日提交的名称为“阵列基板及显示装置”的中国专利申请CN201410804969.4的优先权，其全部内容通过引用并入本文中。
技术领域
本发明涉及显示技术领域，具体地说，涉及一种阵列基板及显示装置。
背景技术
随着显示技术的发展，液晶显示器已经成为最为常见的显示装置。
另一方面，随着智能电子产品的普及，电容式触控屏也被广泛的应用于手机、平板电脑等各种电子产品中。目前较为多见的电容式触控屏有OGS(One glass solution)、on-cell和in-cell三种技术。其中，in-cell技术由于其制作工艺上的优势，相比OGS技术和on-cell技术，具有更加轻薄、透光性更好、结构更加稳定等优点。
本发明人在实现本发明的过程中发现，现有技术至少存在以下技术问题：采用in-cell技术的液晶显示器中，至少需要增设寻址线及相应的绝缘层等结构。在阵列基板的制造过程中，需要增加至少一次构图工艺(Photo Engraving Process，简称PEP)，因此现有技术存在阵列基板的制造过程过于复杂的技术问题。
发明内容
本发明的目的在于提供一种3D眼镜、曲面显示器及3D显示设备，以解决现有技术中因为左右眼相互干扰而影响3D显示的显示效果的技术问题。
本发明的目的在于提供一种阵列基板及显示装置，以解决现有的in-cell技术中，阵列基板的制造过程过于复杂的技术问题。
本发明提供一种阵列基板，包括多个像素单元，每个所述像素单元中设置有薄膜晶体管(Thin Film Transistor，简称TFT)；
所述阵列基板还包括多条公共电极和多条寻址线，每条寻址线与相应的公共电极连接；
所述公共电极用于为相应的像素单元提供公共电压，也用于产生触控信号；
所述寻址线由第一金属线和第二金属线连接形成，所述第一金属线与所述薄膜晶体管的栅极位于同一图层，所述第二金属线与所述薄膜晶体管的源极、漏极位于同一图层。
优选的是，该阵列基板还包括多条扫描线和多条数据线；
所述第一金属线位于所述数据线的正下方。
在一种实现方式中，所述第一金属线与所述第二金属线之间通过连接部件相连，所述第一金属线和所述第二金属线分别通过过孔与所述连接部件相连。
优选的是，所述连接部件与所述薄膜晶体管中的低温多晶硅(Low Temperature Poly-Silicon，简称LTPS)位于同一图层。
进一步的是，所述薄膜晶体管为顶栅型薄膜晶体管。
进一步的是，所述薄膜晶体管中的LTPS及所述连接部件的下方设置有遮光层。
在另一种实现方式中，所述第一金属线与所述第二金属线之间通过过孔直接相连。
优选的是，一个所述公共电极对应一个或多个所述像素单元。
本发明还提供一种显示装置，包括彩膜基板和上述的阵列基板。
优选的是，所述显示装置为边缘场开关型(Fringe Field Switching，简称FFS)液晶显示器。
本发明带来了以下有益效果：本发明提供的阵列基板中，利用第一金属线和第二金属线相互连接而形成寻址线，用于传输触控信号。并且，将第一金属线和第二金属线进行跨接，可以避开原有的扫描线和数据线，因此不会影响扫描线和数据线的线路设计。
在阵列基板的制造过程中，第一金属线、扫描线、薄膜晶体管的栅极可以在同一次构图工艺中同步形成，第二金属线、数据线、薄膜晶体管的源极、漏极也可以在同一次构图工艺中同步形成，从而不需要单独为了形成寻址线增加构图工艺的次数，简化了阵列基板的制造过程。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要的附图做简单的介绍：
图1是本发明实施例一提供的阵列基板的平面示意图；
图2是本发明实施例一提供的阵列基板的截面示意图；
图3是本发明实施例二提供的阵列基板的平面示意图；
图4是本发明实施例二提供的阵列基板的截面示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
实施例一：
如图1和图2所示，本发明实施例提供一种阵列基板，该阵列基板中包括多个像素单元，每个像素单元中设置有薄膜晶体管1及像素电极2。
本实施例中的薄膜晶体管1为顶栅型薄膜晶体管。作为一个优选方案，本实施例中采用LTPS形成薄膜晶体管1的沟道。相比于传统的非晶硅(α-Si)，LTPS具有更高的载流子迁移率，因此实现更高的分辨率和更低的功耗，而且在阵列基板上器件的集成度也更高。
本实施例中，栅极101位于LTPS 102上方，且栅极101与LTPS 102之间设置有绝缘层32。栅极101上方设置有绝缘层33，源极103和漏极104设置于绝缘层33上，并且源极103和漏极104通过过孔41与LTPS 102连接。像素电极2与漏极104之间通过贯穿绝缘层34、35的过孔42连接。
本发明实施例提供的阵列基板中还包括多条公共电极6和多条寻址线，每条寻址线与相应的公共电极6连接。其中，寻址线由第一金属线51和第二金属线52连接形成，第一金属线51与薄膜晶体管1的栅极101位于同一图层，第二金属线52与薄膜晶体管1的源极103、漏极104位于同一图层。
该阵列基板在应用中可采用显示与触控分时扫描：在显示图像时，公共电极6为相应的像素单元提供公共电压，使公共电极6与像素电极2之间形成电场；在触控扫描时，公共电极6作为触控传感器，用于产生触控信号。应当说明的是，一个公共电极6可以对应一个或多个像素单元，并且公共电极6的形状通常为矩形，但也可以根据实际情况设置为其它形状。
本发明实施例提供的阵列基板中还包括多条扫描线7和多条数据线8。作为一个优选方案，第一金属线51位于数据线8的正下方。此外，第一金属线51的端部向侧面延伸出数据线8之外，而第二金属线52在该延伸处与第一金属线51连接，并跨过扫描线7。
以此种方式将第一金属线51和第二金属线52进行跨接，可以避开原有的扫描线7和数据线8，因此不会影响扫描线7和数据线8的线路设计。并且，本实施例中第一金属线51位于数据线8的正下方，使第一金属线51的正投影与数据线8基本重合，则第一金属线51和数据线8能够被彩膜基板上的同一条黑矩阵遮挡。当然，第一金属线51与数据线8的宽度可以稍有不同。
因为寻址线的绝大部分都是由第一金属线51构成，只在跨过扫描线7处，才会采用第二金属线52，所以第一金属线51和数据线8被同一条黑矩阵遮挡，也就能够使寻址线的绝大部分都被原有的黑矩阵遮挡住，从而几乎不会因为寻址线影响液晶显示器整体的开口率。
本实施例中，第一金属线51与第二金属线52之间通过连接部件53相连。作为一个优选方案连接部件53为LTPS，并且连接部件53与薄膜晶体管1中的LTPS 102位于同一图层。第一金属线51与连接部件53之间通过贯穿绝缘层32的过孔43连接，第二金属线52与连接部件53之间通过贯穿绝缘层32、33的过孔44连接。公共电极6通过贯穿绝缘层34的过孔45与寻址线的第二金属线52连接。
进一步的是，薄膜晶体管1中的LTPS 102及连接部件53的下方设置有绝缘层31和遮光层9，遮光层9优选采用金属材料形成。遮光层9能够防止薄膜晶体管1的沟道区域及连接部件53，在受到背光源的光照情况下出现光生电流，而导致薄膜晶体管1或寻址线产生干扰信号的问题。
在本发明实施例提供的阵列基板的制造过程中，第一金属线51、扫描线7、薄膜晶体管1的栅极101可以在同一次构图工艺中同步形成，第二金属线52、数据线8、薄膜晶体管1的源极103、漏极104可以在同一次构图工艺中同步形成，连接部件53和薄膜晶体管1的LTPS 102也可以在同一次构图工艺中同步形成。因此，不需要单独为了形成寻址线增加构图工艺的次数，简化了阵列基板的制造过程，并且也不会因为寻址线而增加阵列基板的厚度。
实施例二：
如图3和图4所示，本实施例与实施例一基本相同，其不同点在于，本实施例中，第一金属线51与第二金属线52之间通过贯穿绝缘层33的过孔46直接相连。
相比于实施例一，本实施例中可以省去连接部件以及连接部件下方的遮光层。此外，本实施例中的寻址线完全由第一金属线51和第二金属线52连接而成，即寻址线完全由金属材料形成，所以寻址线中所传输的触控信号也更加稳定、可靠。
实施例三：
本发明实施例提供一种显示装置，可以是手机、平板电脑等具有触控功能的显示装置，并且采用in-cell技术实现触控电路。该显示装置包括彩膜基板和上述实施例一或实施例二提供的阵列基板。
该显示装置优选为边缘场开关型(Fringe Field Switching，简称FFS)液晶显示器。其核心技术特性为：通过同一平面内狭缝状像素电极电极边缘所产生的电场，使狭缝状电极问以及电极正上方的所有取向液晶分子都能够产生平面旋转，从而提高了液晶层的透光效率。FFS技术可以提高液晶显示器的画面品质，具有高分辨率、高透过率、低功耗、宽视角、高开口率、低色差、无挤压水波纹等优点。
本发明实施例提供的显示装置与上述本发明实施例一或实施例二提供的阵列基板，具有相同的技术特征，所以也能解决相同的技术问题，达到相同的技术效果。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (17)

  1. 一种阵列基板，包括多个像素单元，每个所述像素单元中设置有薄膜晶体管；
    所述阵列基板还包括多条公共电极和多条寻址线，每条寻址线与相应的公共电极连接；
    所述公共电极用于为相应的像素单元提供公共电压，也用于产生触控信号；
    所述寻址线由第一金属线和第二金属线连接形成，所述第一金属线与所述薄膜晶体管的栅极位于同一图层，所述第二金属线与所述薄膜晶体管的源极、漏极位于同一图层。
  2. 根据权利要求1所述的阵列基板，其中，还包括多条扫描线和多条数据线；
    所述第一金属线位于所述数据线的正下方。
  3. 根据权利要求1所述的阵列基板，其中，所述第一金属线与所述第二金属线之间通过连接部件相连，所述第一金属线和所述第二金属线分别通过过孔与所述连接部件相连。
  4. 根据权利要求3所述的阵列基板，其中，所述连接部件与所述薄膜晶体管中的低温多晶硅位于同一图层。
  5. 根据权利要求4所述的阵列基板，其中，所述薄膜晶体管为顶栅型薄膜晶体管。
  6. 根据权利要求5所述的阵列基板，其中，所述薄膜晶体管中的低温多晶硅及所述连接部件的下方设置有遮光层。
  7. 根据权利要求1所述的阵列基板，其中，所述第一金属线与所述第二金属线之间通过过孔直接相连。
  8. 根据权利要求1所述的阵列基板，其中，一个所述公共电极对应一个或多个所述像素单元。
  9. 一种显示装置，包括彩膜基板和阵列基板；
    所述阵列基板包括多个像素单元，每个所述像素单元中设置有薄膜晶体管；
    所述阵列基板还包括多条公共电极和多条寻址线，每条寻址线与相应的公共电极连接；
    所述公共电极用于为相应的像素单元提供公共电压，也用于产生触控信号；
    所述寻址线由第一金属线和第二金属线连接形成，所述第一金属线与所述薄膜晶体管的栅极位于同一图层，所述第二金属线与所述薄膜晶体管的源极、漏极位于同一图层。
  10. 根据权利要求9所述的显示装置，其中，还包括多条扫描线和多条数据线；
    所述第一金属线位于所述数据线的正下方。
  11. 根据权利要求9所述的显示装置，其中，所述第一金属线与所述第二金属线之间 通过连接部件相连，所述第一金属线和所述第二金属线分别通过过孔与所述连接部件相连。
  12. 根据权利要求11所述的显示装置，其中，所述连接部件与所述薄膜晶体管中的低温多晶硅位于同一图层。
  13. 根据权利要求12所述的显示装置，其中，所述薄膜晶体管为顶栅型薄膜晶体管。
  14. 根据权利要求13所述的显示装置，其中，所述薄膜晶体管中的低温多晶硅及所述连接部件的下方设置有遮光层。
  15. 根据权利要求9所述的显示装置，其中，所述第一金属线与所述第二金属线之间通过过孔直接相连。
  16. 根据权利要求9所述的显示装置，其中，一个所述公共电极对应一个或多个所述像素单元。
  17. 根据权利要求9所述的显示装置，其中，所述显示装置为边缘场开关型液晶显示器。
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Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104199586B (zh) * 2014-09-16 2018-04-13 重庆京东方光电科技有限公司 一种阵列基板、内嵌式触摸屏和触控显示装置
KR102289934B1 (ko) * 2014-11-28 2021-08-13 삼성디스플레이 주식회사 터치 감지 센서를 포함하는 표시 장치
CN104793420B (zh) * 2015-05-08 2018-04-06 厦门天马微电子有限公司 阵列基板及制作方法、显示装置
CN104777692B (zh) 2015-05-08 2018-09-04 厦门天马微电子有限公司 阵列基板及制作方法、触控显示面板
CN104808376B (zh) * 2015-05-11 2018-05-11 厦门天马微电子有限公司 阵列基板及显示装置
CN104915081B (zh) * 2015-06-10 2019-03-15 京东方科技集团股份有限公司 一种阵列基板及其制备方法、触控显示面板
CN105116648A (zh) * 2015-06-26 2015-12-02 武汉华星光电技术有限公司 像素结构、阵列基板及显示装置
CN105093755A (zh) * 2015-08-28 2015-11-25 深圳市华星光电技术有限公司 薄膜晶体管阵列基板及液晶显示面板
KR102554251B1 (ko) * 2015-12-07 2023-07-11 엘지디스플레이 주식회사 표시장치
CN106125440B (zh) * 2016-09-05 2020-03-31 京东方科技集团股份有限公司 阵列基板及其制备方法、显示装置
KR102554862B1 (ko) * 2016-11-21 2023-07-14 삼성디스플레이 주식회사 표시 장치
CN106707639B (zh) * 2016-12-20 2021-01-22 厦门天马微电子有限公司 阵列基板、显示面板、阵列基板制作方法
CN106707638B (zh) * 2016-12-20 2020-08-11 厦门天马微电子有限公司 阵列基板及其制作方法、显示面板
US10846501B2 (en) * 2017-04-28 2020-11-24 The Board Of Trustees Of The Leland Stanford Junior University Acoustic biometric touch scanner
US10489627B2 (en) 2017-04-28 2019-11-26 The Board Of Trustees Of The Leland Stanford Junior University Acoustic biometric touch scanner
CN107193422B (zh) * 2017-06-08 2019-01-25 京东方科技集团股份有限公司 一种阵列基板、显示面板及显示装置
CN108227326A (zh) * 2018-02-01 2018-06-29 京东方科技集团股份有限公司 阵列基板及其制造方法、触控显示面板
CN108376687B (zh) * 2018-03-30 2020-05-19 武汉华星光电技术有限公司 阵列基板及其制备方法、内嵌式触摸屏
CN108761901A (zh) * 2018-04-28 2018-11-06 武汉华星光电技术有限公司 阵列基板和显示面板
US10838277B2 (en) * 2018-09-12 2020-11-17 Sharp Kabushiki Kaisha Image display device with frame region transistor control line including stacked line layers
CN110190069B (zh) * 2019-05-22 2021-08-03 武汉华星光电技术有限公司 阵列基板及其制备方法
CN112558800B (zh) * 2019-09-25 2024-01-23 京东方科技集团股份有限公司 阵列基板及其制作方法、显示面板、显示装置
CN111694464B (zh) * 2020-06-19 2024-04-19 京东方科技集团股份有限公司 阵列基板及其制备方法、显示装置
CN111983862B (zh) * 2020-08-19 2022-07-12 武汉华星光电技术有限公司 阵列基板、阵列基板制作方法及液晶显示面板

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001042359A (ja) * 1999-08-02 2001-02-16 Matsushita Electric Ind Co Ltd 液晶表示パネルおよびその製造方法
CN1643688A (zh) * 2002-03-20 2005-07-20 皇家飞利浦电子股份有限公司 主动矩阵显示装置及其制造
CN1759344A (zh) * 2003-02-04 2006-04-12 造型逻辑有限公司 晶体管控制的显示器件
US20100188361A1 (en) * 2009-01-23 2010-07-29 Kim Sung-Man Display panel and method of manufacturing the same
CN101866228A (zh) * 2009-04-17 2010-10-20 上海天马微电子有限公司 触摸屏、液晶显示装置及触摸屏的驱动方法
CN103176302A (zh) * 2011-12-22 2013-06-26 乐金显示有限公司 液晶显示器件及其制造方法
CN103728760A (zh) * 2013-12-26 2014-04-16 深圳市华星光电技术有限公司 一种触摸液晶显示屏阵列基板及相应的触摸液晶显示屏

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6654073B1 (en) * 1999-09-01 2003-11-25 Nec Lcd Technologies, Ltd. Liquid crystal display having storage capacitance electrodes and method of fabricating the same
US9201259B2 (en) * 2010-03-19 2015-12-01 Lg Display Co., Ltd. Touch sensing type liquid crystal display device and method of fabricating the same
CN103268047B (zh) * 2012-12-31 2015-12-09 厦门天马微电子有限公司 一种ltps阵列基板及其制造方法
CN103217843B (zh) * 2013-03-25 2016-02-17 京东方科技集团股份有限公司 阵列基板及其制造方法和液晶面板
CN103279245B (zh) * 2013-06-06 2017-03-15 敦泰电子有限公司 触控显示装置
CN103383946B (zh) * 2013-07-12 2016-05-25 京东方科技集团股份有限公司 一种阵列基板、显示装置及阵列基板的制备方法
CN103698949A (zh) * 2013-12-27 2014-04-02 合肥京东方光电科技有限公司 阵列基板、显示装置及其驱动方法
CN104022126B (zh) * 2014-05-28 2017-04-12 京东方科技集团股份有限公司 一种阵列基板、其制作方法及显示装置
CN104216183B (zh) * 2014-08-28 2017-08-29 合肥鑫晟光电科技有限公司 一种阵列基板及其制备方法、显示装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001042359A (ja) * 1999-08-02 2001-02-16 Matsushita Electric Ind Co Ltd 液晶表示パネルおよびその製造方法
CN1643688A (zh) * 2002-03-20 2005-07-20 皇家飞利浦电子股份有限公司 主动矩阵显示装置及其制造
CN1759344A (zh) * 2003-02-04 2006-04-12 造型逻辑有限公司 晶体管控制的显示器件
US20100188361A1 (en) * 2009-01-23 2010-07-29 Kim Sung-Man Display panel and method of manufacturing the same
CN101866228A (zh) * 2009-04-17 2010-10-20 上海天马微电子有限公司 触摸屏、液晶显示装置及触摸屏的驱动方法
CN103176302A (zh) * 2011-12-22 2013-06-26 乐金显示有限公司 液晶显示器件及其制造方法
CN103728760A (zh) * 2013-12-26 2014-04-16 深圳市华星光电技术有限公司 一种触摸液晶显示屏阵列基板及相应的触摸液晶显示屏

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