WO2016090851A1 - 高带外抑制高频表面贴装声表面横波谐振滤波器 - Google Patents

高带外抑制高频表面贴装声表面横波谐振滤波器 Download PDF

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WO2016090851A1
WO2016090851A1 PCT/CN2015/079382 CN2015079382W WO2016090851A1 WO 2016090851 A1 WO2016090851 A1 WO 2016090851A1 CN 2015079382 W CN2015079382 W CN 2015079382W WO 2016090851 A1 WO2016090851 A1 WO 2016090851A1
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stage
transducer
output
resonant filter
input
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PCT/CN2015/079382
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English (en)
French (fr)
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周卫
朱明�
曾武
付金桥
刘积学
马晋毅
陈峻
绍静
许东辉
冉川云
欧阳锋
黎亮
田亚睿
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中国电子科技集团公司第二十六研究所
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Priority to PCT/CN2016/075772 priority Critical patent/WO2016184223A1/zh
Publication of WO2016090851A1 publication Critical patent/WO2016090851A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves

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  • the invention relates to a surface acoustic wave device, in particular to a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonance filter, belonging to the technical field of surface acoustic wave devices.
  • the surface acoustic wave has a wave velocity five orders of magnitude slower than the electromagnetic wave, and the higher the operating frequency, the narrower the transducer finger width for exciting the surface acoustic wave signal.
  • the width of the finger is limited to one micron or less, which makes the manufacturing process more difficult. Since the world's first report in 1987 on the production of practical surface acoustic wave transverse wave resonators on quartz piezoelectric substrates, surface acoustic wave transverse wave devices have been widely used as resonators, extremely narrowband resonant filters, and sensors.
  • the acoustic surface transverse wave excited on the piezoelectric quartz substrate has a sound velocity 1.6 times higher than that of the Rayleigh type surface acoustic wave under the same process conditions, and therefore is more suitable for fabricating high frequency devices.
  • working in a frequency band above one gigahertz has obvious advantages.
  • the acoustic surface shear wave excited on the piezoelectric quartz substrate is a short-circuit gate structure that is added between the input transducer and the output transducer so that the sweeping body wave is clamped to the surface, rather than being propagated deep into the wafer.
  • the acoustic surface transverse wave has a sound velocity 1.6 times higher than the Rayleigh type surface acoustic wave under the same process conditions, and therefore is more suitable for fabricating high frequency devices.
  • the surface acoustic wave transverse wave resonator filter is a very narrow band resonant filter with a certain bandwidth developed on the basis of the acoustic surface transverse wave resonator. Compared with the resonator, it not only requires frequency, bandwidth, loss and other properties, but also acts as a filter. It also requires suppression performance outside the passband. Due to the limitation of its topology, the single-stage surface acoustic wave transverse wave resonator has limited out-of-band rejection and cannot meet the high out-of-band rejection performance requirements.
  • an object of the present invention is to provide a high-bandout high-frequency surface mount acoustic surface transverse wave resonance filter, which greatly improves the out-of-band rejection of the resonant filter and improves the out-of-band rejection performance.
  • the requirement for high out-of-band rejection is met at high frequency operation.
  • a high-bandout high-frequency surface mount acoustic surface transverse wave resonant filter comprising a chip packaged within a housing having a resonant filter, the resonant filter comprising a piezoelectric quartz substrate and a piezoelectric quartz substrate
  • the resonant filter is two, respectively a first-stage resonant filter and a second-order resonance a filter, the two resonant filters share a piezoelectric quartz substrate, and the output transducer signal output lead electrode of the first-stage resonant filter is connected to the input transducer signal input lead electrode of the second-stage resonant filter;
  • the electric quartz substrate is provided with six external leads, a first-stage resonant filter
  • Three of the six lead electrodes are respectively placed at the input signal end of the first-stage resonant filter input transducer end reflector and the input transducer, the input transducer end reflector and the input transducer output signal end, and the output
  • the reflector of the transducer end and the ground of the output transducer, and the other three lead electrodes are respectively placed at the ground of the second-stage resonant filter input transducer end reflector and the input transducer, and the output transducer
  • the lead corresponding to the ground lead electrode of the input transducer and the output transducer is a single lead or a double lead.
  • the signal output end of the first-stage resonant filter output transducer and the second-stage resonant filter signal input end may be connected parallel to the acoustic surface transverse wave propagation direction, or may be connected across the acoustic surface transverse wave propagation direction.
  • the intermediate shorting grid of the two-stage resonant filter can be connected to the respective transducers in the same direction or in different directions.
  • the present invention has the following beneficial effects:
  • Two-stage acoustic surface transverse wave resonant filter All grounding leads are directly connected to the gold-plated base plate of the outer casing to form a large-area short-circuit grounding, and not connected to the ground by the spot welding island of the outer casing, so that the acoustic surface transverse wave resonance filter is applied at high frequency.
  • the out-of-band rejection of the time is greatly improved, and the out-of-band rejection performance of the single-stage acoustic surface transverse wave resonator filter is improved.
  • the two-stage acoustic surface shear wave resonator filter topology is fabricated on the same piezoelectric quartz substrate and connected end to end.
  • the acoustic wave propagation direction of the two-stage acoustic surface shear wave resonator filter is the same.
  • the resonant filter of the two-stage acoustic surface transverse wave resonant filter topology on the piezoelectric quartz substrate does not change the temperature stability compared with the single-stage acoustic surface transverse wave resonant filter, and its bandwidth, operating frequency and other properties are almost unchanged. However, the out-of-band rejection performance is improved.
  • the high-band-out-suppression acoustic surface transverse-wave resonator filter of the present invention can use the same piezoelectric quartz material and the same manufacturing process without changing the size of the piezoelectric quartz chip and the package size of the outer casing compared with the original single-stage. Improved out-of-band rejection.
  • the signal connection between the first-stage acoustic surface shear wave resonator filter and the second-stage surface acoustic wave transverse wave resonator filter is parallel to the surface transverse wave propagation direction, or may cross the transverse wave propagation direction of the acoustic surface.
  • the intermediate short-circuit grid of the first-stage surface acoustic wave transverse wave resonator filter and the second-stage surface acoustic wave transverse wave resonator filter are connected to the transducer in the same direction or in different directions.
  • FIG. 1 is a schematic diagram of a high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter chip according to the present invention, wherein (a), (b), (c), and (d) are respectively four different topologies.
  • FIG. 2 is a diagram showing the lead structure of a high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter according to the present invention, wherein (a), (b), (c), and (d) are respectively high bands of four different topologies. External suppression of high frequency surface mount acoustic surface shear wave resonator filter structure.
  • the invention adds a first-order acoustic surface transverse wave resonance filter on the basis of the single-stage surface acoustic wave transverse wave resonance filter, so that the out-of-band suppression of the acoustic surface transverse wave resonance filter of the two-stage structure is greatly improved, and the out-of-band suppression performance is improved. It meets the requirements for high out-of-band rejection at high frequency operation.
  • the invention increases the existing acoustic surface shear wave resonance filter from one to two (i.e., from single stage to two stages), which are the first stage and the second stage respectively, see Fig. 1 (a), (b), (c), (d) and Figs. 2(a), (b), (c), (d), as can be seen from the figure, the present invention has a high out-of-band suppression high frequency surface mount acoustic surface transverse wave resonator filter
  • the chip (1) is packaged in a casing, and the chip (1) is provided with a resonant filter topology, including a piezoelectric quartz substrate (10) and a first stage input switch disposed on the piezoelectric quartz substrate.
  • Reflector (11) of the energy device first-stage input transducer (12), first-stage intermediate short-circuit gate (13), first-stage output transducer (14), reflection of the first-stage output transducer (15), reflector of the second stage input transducer (16), second stage input transducer (17), second stage intermediate shorting gate (18), second stage output transducer (19) The reflector of the second stage output transducer (20).
  • the first stage input transducer is provided with a signal input lead electrode (31) and a ground lead electrode (33), the first stage output transducer is provided with a ground lead electrode (32) and a signal output lead and a second stage input transducing Connector (37), second stage input transducer ground lead electrode (34), second stage output transducer lead ground electrode (35) and signal output lead electrode (36), and first stage output transducing The connector and the second stage input transducer end (37).
  • Six external leads are provided on the piezoelectric quartz substrate (10), which are a first-stage input transducer signal input lead (2), a first-stage input transducer ground lead (3), and a first-stage output.
  • the topological structure of the chip is arranged on the piezoelectric quartz substrate (10) from left to right in the order of the reflector (11) of the first-stage input transducer, and the first-stage input transducer ( 12), a first stage intermediate shorting gate (13), a first stage output transducer (14), a reflector of the first stage output transducer (15), a reflector of the second stage input transducer (16) ), a second stage input transducer (17), a second stage intermediate shorting gate (18), a second stage output transducer (19), a second stage output transducer reflector (20), first The stage output transducer signal output is directly coupled to the second stage input transducer signal input.
  • the two-stage structure also includes the following six outer leads: see Figure 2, the first stage Input transducer signal input lead (2), first stage input transducer ground lead (3), first stage output transducer ground lead (4), second stage input transducer ground lead (5), The second stage output transducer ground lead (6), the second stage output transducer signal output lead (7).
  • the two-stage structure is provided with six lead electrodes (31, 32, 33, 34, 35, 36) and four sets of reflectors (11, 15, 16) on the piezoelectric quartz substrate (10). 20), four sets of transducers (12, 14, 17, 19), a set of first stage output transducer signal outputs and a second stage input transducer input connection line (37) and two intermediate shorting gates (13, 18), attached to the surface of the piezoelectric substrate (10), see Figure 2.
  • the original high-frequency surface mount acoustic surface transverse wave resonant filter is composed of a single-stage acoustic surface transverse wave resonant filter, and the present invention adopts a two-stage acoustic surface transverse wave resonant filter topology.
  • the first stage input transducer signal lead and the second stage output transducer signal lead are respectively connected An independent gold-plated spot-welded island of the surface mount housing, the first-stage output transducer is directly connected to the second-stage input transducer, and the remaining ground leads are directly connected to the gold-plated bottom plate 21 of the surface mount housing, and the outer band is suppressed. Improved.
  • the signal output end of the first-stage output transducer of the present invention and the second-stage signal input end may be connected parallel to the transverse wave propagation direction of the acoustic surface, as shown in FIG. 1(a) and (b), respectively, or may cross-cross the acoustic surface transverse wave.
  • the direction of propagation is connected, as shown in Figures 1(c) and (d), respectively.
  • the manner in which the intermediate short-circuit gates of the two-stage acoustic surface shear wave resonator filter of the present invention are connected to the transducers may be in the same direction, as shown in FIGS. 1(b) and (d), or in different directions, as shown in FIG. 1(a). (c).
  • the first stage input transducer input signal lead and ground lead, the first stage output transducer ground lead, and the second stage input transducer ground lead, the second stage output transducer ground lead and signal The output leads are all of the same material.
  • the lead may be a single lead or a double lead.
  • the invention adopts the chip topology of the two-stage acoustic surface transverse wave resonance filter for the first time, and does not change the package size of the surface mount casing and the passband performance of the resonant filter, such as piezoelectric quartz substrate material, device frequency, loss, bandwidth, etc.
  • the characteristics are basically unchanged.
  • the chip topology is changed inside the casing, so that the original single-stage acoustic surface shear wave resonator filter is changed to a new two-stage surface acoustic wave transverse wave filter topology, and the input transducer and the output transducer ground lead are directly Connected to the gold-plated base of the housing, the out-of-band rejection of the resonant filter is greatly improved.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

一种高带外抑制高频表面贴装声表面横波谐振滤波器，包括封装在外壳内的芯片（1），所述芯片（1）上设有谐振滤波器，所述谐振滤波器为两个，分别为第一级谐振滤波器和第二级谐振滤波器，两谐振滤波器共用一块压电石英基片（10），第一级谐振滤波器的输出换能器信号输出引线电极与第二级谐振滤波器的输入换能器信号输入引线电极连接。本谐振滤波器改善了带外抑制性能，在高频工作时满足了高带外抑制的要求。

Description

高带外抑制高频表面贴装声表面横波谐振滤波器 技术领域
本发明涉及声表面波器件，尤其是一种高带外抑制高频表面贴装声表面横波谐振滤波器，属于声表面波器件技术领域。
背景技术
声表面波具有比电磁波慢五个数量级的波速，其工作频率越高，用于激励声表面波信号的换能器指条宽度就越窄。当工作频率达到一千兆赫兹以上时，其指条宽度就局限在一微米以下，这给制作工艺增加了难度。自从1987年世界上首次报导了在石英压电基片上制作出具有实用价值的声表面横波谐振器，声表面横波器件作为谐振器、极窄带谐振滤波器、传感器等方面得到了广泛应用。压电石英基片上激励的声表面横波，在相同工艺条件下，具有比瑞利型声表面波高1.6倍的声速，因此，更适应制作高频率器件。特别是工作在高于一千兆赫兹的频段具有明显的优势。压电石英基片上激励的声表面横波，是在输入换能器和输出换能器之间加入使掠面体波被钳制到表面传播，而不是深入晶片内传播的短路栅结构。声表面横波在相同工艺条件下，具有比瑞利型声表面波高1.6倍的声速，因此，更适应制作高频率器件。声表面横波谐振滤波器是在声表面横波谐振器的基础上，开发出来的具有一定带宽的极窄带谐振滤波器，与谐振器相比，不单要求频率、带宽、损耗等性能，作为滤波器使用，还要求通带以外的抑制性能。单级声表面横波谐振滤波器由于受到其拓扑结构的限制，其带外抑制有限，不能满足高带外抑制性能要求。
发明内容
针对现有技术存在的上述不足，本发明的目的在于提供一种高带外抑制高频表面贴装声表面横波谐振滤波器，本谐振滤波器带外抑制大大提高，改善了带外抑制性能，在高频工作时满足了高带外抑制的要求。
为了实现上述目的，本发明采用的技术方案如下：
高带外抑制高频表面贴装声表面横波谐振滤波器，包括封装在外壳内的芯片，所述芯片上设有谐振滤波器，谐振滤波器包括压电石英基片和设置在压电石英基片上的输入换能器反射器、输入换能器、中间短路栅、输出换能器、输出换能器反射器，输入换能器设有 接地引线电极和信号输入引线电极，输出换能器设有接地引线电极和信号输出引线电极，其特征在于：所述谐振滤波器为两个，分别为第一级谐振滤波器和第二级谐振滤波器，两谐振滤波器共用一块压电石英基片，第一级谐振滤波器的输出换能器信号输出引线电极与第二级谐振滤波器的输入换能器信号输入引线电极连接；在压电石英基片上设有六个外接引线，第一级谐振滤波器输入换能器接地引线电极、第一级谐振滤波器信号输入引线电极、第一级谐振滤波器输出换能器接地引线电极、第二级谐振滤波器输入换能器接地引线电极、第二级谐振滤波器输出换能器接地引线电极、第二级谐振滤波器信号输出引线电极分别与六个外接引线一一连接；所有接地引线电极通过各自的引线直接连接在外壳镀金底板上，第一级谐振滤波器信号输入引线电极和第二级谐振滤波器信号输出引线电极通过各自的引线分别连接在外壳上独立镀金点焊岛上。
六个引线电极其中三个分别置于第一级谐振滤波器输入换能器端反射器与输入换能器的输入信号端、输入换能器端反射器与输入换能器输出信号端、输出换能器端的反射器与输出换能器的接地端，另三个引线电极分别置于第二级谐振滤波器输入换能器端反射器与输入换能器的接地端、输出换能器的反射器与输出换能器的输出信号端、输出换能器的反射器与输出换能器的接地端。
所有的引线为同一材质引线。
所述输入换能器和输出换能器的接地引线电极对应的引线为单引线或者双引线。
第一级谐振滤波器输出换能器的信号输出端与第二级谐振滤波器信号输入端可是平行于声表面横波传播方向连接，也可是交叉横跨声表面横波传播方向连接。
两级谐振滤波器的中间短路栅与各自换能器的连接方式可是同方向，也可是不同方向。
相比现有技术，本发明具有如下有益效果：
1、两级声表面横波谐振滤波器所有接地引线直接连接在外壳镀金底板上，形成大面积短路接地，而不经过外壳点焊岛与地连接，从而使得声表面横波谐振滤波器在高频应用时的带外抑制得到极大地提高，比单级声表面横波谐振滤波器的带外抑制性能提高。
2、两级声表面横波谐振滤波器拓扑结构制作在同一个压电石英基片上，并且首尾相连，两级声表面横波谐振滤波器的声波传播方向相同。
3、压电石英基片上两级声表面横波谐振滤波器拓扑结构的谐振滤波器，与单级声表面横波谐振滤波器相比，不改变温度稳定性，其带宽、工作频率等性质几乎不变，但带外抑制性能得到提高。
4、本发明的高带外抑制声表面横波谐振滤波器与原有的单级相比，可不改变压电石英芯片尺寸、外壳封装尺寸，采用相同的压电石英材料，相同的制作工艺，而带外抑制性能提高。
5、第一级声表面横波谐振滤波器和第二级声表面横波谐振滤波器之间的信号连接，可是平行于表面横波传播方向，也可是交叉横跨声表面横波传播方向。
6、第一级声表面横波谐振滤波器和第二级声表面横波谐振滤波器各自的中间短路栅与换能器连接的方式，可是相同方向，也可是不同方向。
附图说明
图1为本发明高带外抑制高频表面贴装声表面横波谐振滤波器芯片示意图，其中(a)、(b)、(c)、(d)分别为四种不同拓扑结构。
图2为本发明高带外抑制高频表面贴装声表面横波谐振滤波器引线结构图，其中(a)、(b)、(c)、(d)分别为四种不同拓扑结构的高带外抑制高频表面贴装声表面横波谐振滤波器结构图。
具体实施方式
本发明是在单级声表面横波谐振滤波器的基础上，增加一级声表面横波谐振滤波器，使得两级结构的声表面横波谐振滤波器的带外抑制大大提高，改善了带外抑制性能，在高频工作时满足了高带外抑制的要求。下面结合附图对本发明作进一步详细说明。
本发明将现有的声表面横波谐振滤波器由一个增加为两个(即由单级改进为两级)，分别为第一级和第二级，参见图1(a)、(b)、(c)、(d)和图2(a)、(b)、(c)、(d)，从图上可以看出，本发明高带外抑制高频表面贴装声表面横波谐振滤波器，包括封装在外壳内的芯片(1)，所述芯片(1)上设有谐振滤波器拓扑结构，包括压电石英基片(10)和设置在压电石英基片上的第一级输入换能器的反射器(11)、第一级输入换能器(12)、第一级中间短路栅(13)、第一级输出换能器(14)、第一级输出换能器的反射器(15)，第二级输入换能器的反射器(16)、第二级输入换能器(17)、第二级中间短路栅(18)、第二级输出换能器(19)、第二级输出换能器的反射器(20)。第一级输入换能器设有信号输入引线电极(31)和接地引线电极(33)、第一级输出换能器设有接地引线电极(32)和信号输出引线与第二级输入换能器连接端(37)，第二级输入换能器接地引线电极(34)，第二级输出换能器引线接地电极(35)和信号输出引线电极(36)，以及第一级输出换能 器与第二级输入换能器端的连接端(37)。在压电石英基片(10)上设有六个外引线，分别为第一级输入换能器信号输入引线(2)、第一级输入换能器接地引线(3)、第一级输出换能器接地引线(4)、第二级输入换能器接地引线(5)、第二级输出换能器接地引线(6)、第二级输出换能器信号输出引线(7)，其分别与六个对应的引线电极连接。所有接地引线电极通过各自的引线直接连接在外壳镀金底板21上，第一级输入换能器信号输入电极(31)和第二级输出换能器信号输出电极(36)通过各自的引线分别连接在不与外壳镀金底板短路的外壳上独立点焊岛上(613、617)。
从图1可以看出，本芯片拓扑结构在压电石英基片(10)上从左向右排列顺序为第一级输入换能器的反射器(11)、第一级输入换能器(12)、第一级中间短路栅(13)、第一级输出换能器(14)、第一级输出换能器的反射器(15)、第二级输入换能器的反射器(16)、第二级输入换能器(17)、第二级中间短路栅(18)、第二级输出换能器(19)、第二级输出换能器的反射器(20)，第一级输出换能器信号输出端与第二级输入换能器信号输入端直接连接。六个引线电极(31、32、33、34、35、36)，其中三个置于第一级输入换能器的反射器与输入换能器的输入信号端(31)、第一级输入换能器的反射器与输入换能器的接地端(33)、第一级输出换能器的反射器与输出换能器的接地端(32)，另三个外引线电极置于第二级输入换能器的反射器与输入换能器的接地端(34)、第二级输出换能器的反射器与输出换能器的输出信号端(36)、第二级输出换能器的反射器与输出换能器的接地端(35)。
除了第一级的输出换能器信号输出端与第二级的输入换能器信号输入端直接连接线(37)，本两级结构还包括如下六个外引线：见图2，第一级输入换能器信号输入引线(2)，第一级输入换能器接地引线(3)，第一级输出换能器接地引线(4)，第二级输入换能器接地引线(5)，第二级输出换能器接地引线(6)，第二级输出换能器信号输出引线(7)。
从构成上看，本两级结构在压电石英基片(10)上设有六个引线电极(31、32、33、34、35、36)、四组反射器(11、15、16、20)、四组换能器(12、14、17、19)、一组第一级输出换能器信号输出与第二级输入换能器输入端连接线(37)和两个中间短路栅(13、18)，紧贴在压电基片(10)表面上，见图2。
82表示的镀金点焊岛是与外壳底板短路的，标号21表示外壳镀金底板，其余612～619分别表示外壳外连接端。对于高频率声表面横波器件，原有的高频表面贴装声表面横波谐振滤波器，是由单级声表面横波谐振滤波器构成，而本发明采用两级声表面横波谐振滤波器拓扑结构，其第一级输入换能器信号引线和第二级输出换能器信号引线分别连接在 表面贴装外壳的独立镀金点焊岛，第一级的输出换能器与第二级的输入换能器直接连接，其余接地引线直接连接在表面贴装外壳的镀金底板21上，带外抑制得到提高。
本发明第一级输出换能器的信号输出端与第二级信号输入端可是平行于声表面横波传播方向连接，分别见图1(a)、(b)，也可是交叉横跨声表面横波传播方向连接，分别见图1(c)、(d)。
本发明两级声表面横波谐振滤波器各自的中间短路栅与换能器连接的方式，可是相同方向，见图1(b)、(d)，也可是不同方向，见图1(a)、(c)。
本发明中，第一级输入换能器输入信号引线和接地引线、第一级输出换能器接地引线，以及第二级输入换能器接地引线、第二级输出换能器接地引线和信号输出引线均为同一材质。
所述的引线可是单引线，也可是双引线。
本发明首次采用两级声表面横波谐振滤波器的芯片拓扑结构，并不改变表面贴装外壳封装尺寸、谐振滤波器的通带性能，如压电石英基片材料、器件频率、损耗、带宽等特性基本不变。只是在外壳内部改变了芯片拓扑结构，使得原有的单级声表面横波谐振滤波器，改变为新型的两级声表面横波谐振滤波器拓扑结构，输入换能器和输出换能器接地引线直接连接在外壳镀金底板上，谐振滤波器的带外抑制性能大大提高。
本发明的上述实施例仅仅是为说明本发明所作的举例，而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其他不同形式的变化和变动。这里无法对所有的实施方式予以穷举。凡是属于本发明的技术方案所引申出的显而易见的变化或变动仍处于本发明的保护范围之列。

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  1. 高带外抑制高频表面贴装声表面横波谐振滤波器，包括封装在外壳内的芯片，所述芯片上设有谐振滤波器，谐振滤波器包括压电石英基片和设置在压电石英基片上的输入换能器反射器、输入换能器、中间短路栅、输出换能器、输出换能器反射器，输入换能器设有接地引线电极和信号输入引线电极，输出换能器设有接地引线电极和信号输出引线电极，其特征在于：所述谐振滤波器为两个，分别为第一级谐振滤波器和第二级谐振滤波器，两谐振滤波器共用一块压电石英基片，两级谐振滤波器的声波传播方向相同；第一级谐振滤波器的输出换能器信号输出引线电极与第二级谐振滤波器的输入换能器信号输入引线电极连接；在压电石英基片上设有六个外接引线，第一级谐振滤波器输入换能器接地引线电极、第一级谐振滤波器信号输入引线电极、第一级谐振滤波器输出换能器接地引线电极、第二级谐振滤波器输入换能器接地引线电极、第二级谐振滤波器输出换能器接地引线电极、第二级谐振滤波器信号输出引线电极分别与六个外接引线一一连接；所有接地引线电极通过各自的引线直接连接在外壳镀金底板上，第一级谐振滤波器信号输入引线电极和第二级谐振滤波器信号输出引线电极通过各自的引线分别连接在外壳上独立镀金点焊岛上。
  2. 根据权利要求1所述的高带外抑制高频表面贴装声表面横波谐振滤波器，其特征在于：六个引线电极其中三个分别置于第一级谐振滤波器输入换能器端反射器与输入换能器的输入信号端、输入换能器端反射器与输入换能器输出信号端、输出换能器端的反射器与输出换能器的接地端，另三个引线电极分别置于第二级谐振滤波器输入换能器端反射器与输入换能器的接地端、输出换能器的反射器与输出换能器的输出信号端、输出换能器的反射器与输出换能器的接地端。
  3. 根据权利要求1所述的高带外抑制高频表面贴装声表面横波谐振滤波器，其特征在于：所有引线为同一材质引线。
  4. 根据权利要求1所述的高带外抑制高频表面贴装声表面横波谐振滤波器，其特征在于：所述输入换能器和输出换能器的接地引线电极对应的引线以及各自的信号引线为单引线或者双引线。
  5. 根据权利要求1所述的高带外抑制高频表面贴装声表面横波谐振滤波器，其特征在于：第一级谐振滤波器输出换能器的信号输出端与第二级谐振滤波器信号输入端可是平行于声表面横波传播方向连接，也可是交叉横跨声表面横波传播方向连接。
  6. 根据权利要求1所述的高带外抑制高频表面贴装声表面横波谐振滤波器，其特征在于：两级谐振滤波器的中间短路栅与各自换能器的连接方式可是同方向，也可是不同方向。
  7. 根据权利要求1所述的高带外抑制高频表面贴装声表面横波谐振滤波器，其特征在于：第一级输入换能器信号输入引线和第二级输出换能器输出引线分别连接在外壳镀金岛上，第一级输入换能器接地引线、第一级输出换能器接地引线、第二级输入换能器接地引线、第二级输出换能器接地引线分别与表面贴装外壳镀金底板连接。
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