WO2016082250A1 - 一种tft基板及其制造方法 - Google Patents

一种tft基板及其制造方法 Download PDF

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Publication number
WO2016082250A1
WO2016082250A1 PCT/CN2014/093349 CN2014093349W WO2016082250A1 WO 2016082250 A1 WO2016082250 A1 WO 2016082250A1 CN 2014093349 W CN2014093349 W CN 2014093349W WO 2016082250 A1 WO2016082250 A1 WO 2016082250A1
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WIPO (PCT)
Prior art keywords
electrode
layer
black matrix
contact hole
forming
Prior art date
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Ceased
Application number
PCT/CN2014/093349
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English (en)
French (fr)
Inventor
连水池
熊源
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TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US14/433,630 priority Critical patent/US9564458B2/en
Publication of WO2016082250A1 publication Critical patent/WO2016082250A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a TFT substrate and a method of fabricating the same.
  • curved TV Because of its superior contrast, wider viewing angle and immersive experience, curved TV provides users with a deeper viewing experience, so it is more and more popular.
  • FIG. 1 is a light blocking condition of the black matrix 101 when the panel 100 is not bent
  • FIG. 2 is a light blocking condition of the black matrix 101 after the panel 100 is bent, by FIG. 1 and FIG. 2 . It can be seen that after the panel 100 is bent, part of the light is emitted from the side of the black matrix 101, causing a light leakage phenomenon, which affects the light shielding effect of the black matrix 101, thereby reducing the contrast of the panel.
  • the technical problem to be solved by the present invention is to provide a TFT substrate and a method of fabricating the same, which can ensure a light-shielding effect and reduce a coupling capacitance between a data line and a scan line.
  • a technical solution adopted by the present invention is to provide a method for manufacturing a TFT substrate, the method comprising the steps of: providing a substrate; forming a gate electrode on the substrate; and sequentially forming a first insulating layer on the gate electrode a layer and an active layer; forming a first black matrix on the active layer; forming a source electrode and a drain electrode on the first black matrix; forming a second insulating layer on the source electrode and the drain electrode; forming on the second insulating layer a pixel electrode, the pixel electrode being electrically connected to one of the source electrode and the drain electrode via the second insulating layer;
  • the step of forming a gate electrode on the substrate further includes: forming a scan line disposed on the substrate in the same layer as the gate electrode, wherein the first insulating layer further covers the scan line, and the active layer is not covered on the scan line;
  • the step of forming the first black matrix on the active layer further includes: forming a second black matrix disposed on the scan line in the same layer as the first black matrix; and forming the source electrode and the drain electrode on the first black matrix further comprises: Further forming a capacitor electrode disposed in the same layer as the source electrode and the drain electrode on the second black matrix, wherein the second insulating layer further covers the capacitor electrode, and the pixel electrode is electrically connected to the capacitor electrode via the second insulating layer;
  • the first black matrix and the second black matrix are composed of a black resin material.
  • the step of forming a first black matrix on the active layer further includes:
  • the method further includes: forming a color resist layer between the pixel electrode and the second insulating layer; further forming an insulating protective layer between the color resist layer and the pixel electrode.
  • the step of forming a color resist layer between the pixel electrode and the second insulating layer further includes: forming a first position of the color resist layer corresponding to one of the source electrode and the drain electrode and a position corresponding to the capacitor electrode a contact hole and a second contact hole, wherein the first contact hole exposes the second insulating layer, the second contact hole passes through the second insulating layer, so that the capacitor electrode is exposed; and further insulation protection is formed between the color resist layer and the pixel electrode
  • the step of forming a layer further includes: forming an insulating protective layer in the first contact hole and the second contact hole; forming an insulating layer and a second insulating layer in the first contact hole to form a third contact hole, and insulating the second contact hole
  • the protective layer is disposed on the second insulating layer, wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode through the third contact hole, and is electrically connected to the capacitor electrode through the second contact hole.
  • another technical solution adopted by the present invention is to provide a method for manufacturing a TFT substrate, the method comprising the steps of: providing a substrate; forming a gate electrode on the substrate; forming a first layer on the gate electrode An insulating layer and an active layer; forming a first black matrix on the active layer; forming a source electrode and a drain electrode on the first black matrix; forming a second insulating layer on the source electrode and the drain electrode; and forming a second insulating layer on the second insulating layer A pixel electrode is formed, and the pixel electrode is electrically connected to one of the source electrode and the drain electrode via the second insulating layer.
  • the step of forming a gate electrode on the substrate further includes: forming a scan line disposed on the substrate in the same layer as the gate electrode, wherein the first insulating layer further covers the scan line, and the active layer is not covered on the scan line;
  • the step of forming the first black matrix on the active layer further includes: forming a second black matrix disposed on the scan line in the same layer as the first black matrix; and forming the source electrode and the drain electrode on the first black matrix further comprises: A capacitor electrode disposed in the same layer as the source electrode and the drain electrode is further formed on the second black matrix, wherein the second insulating layer further covers the capacitor electrode, and the pixel electrode is electrically connected to the capacitor electrode via the second insulating layer.
  • the step of forming a first black matrix on the active layer further includes:
  • the method further includes: forming a color resist layer between the pixel electrode and the second insulating layer; further forming an insulating protective layer between the color resist layer and the pixel electrode.
  • the step of forming a color resist layer between the pixel electrode and the second insulating layer further includes: forming a first position of the color resist layer corresponding to one of the source electrode and the drain electrode and a position corresponding to the capacitor electrode a contact hole and a second contact hole, wherein the first contact hole exposes the second insulating layer, the second contact hole passes through the second insulating layer, so that the capacitor electrode is exposed; and further insulation protection is formed between the color resist layer and the pixel electrode
  • the step of forming a layer further includes: forming an insulating protective layer in the first contact hole and the second contact hole; forming an insulating layer and a second insulating layer in the first contact hole to form a third contact hole, and insulating the second contact hole
  • the protective layer is disposed on the second insulating layer, wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode through the third contact hole, and is electrically connected to the capacitor electrode through the second contact hole.
  • a TFT substrate including: a substrate; a gate electrode disposed on the substrate; a first insulating layer and an active layer, which are sequentially disposed on the gate On the electrode; a first black matrix disposed on the active layer; a source electrode and a drain electrode disposed on the first black matrix; a second insulating layer disposed on the source electrode and the drain electrode; and a pixel electrode disposed in the second On the insulating layer, the pixel electrode is electrically connected to one of the source electrode and the drain electrode via the second insulating layer.
  • the TFT substrate further includes: a scan line disposed on the substrate and disposed in the same layer as the gate electrode, wherein the first insulating layer further covers the scan line, the active layer is not covered on the scan line; and the second black matrix is set On the scan line and disposed in the same layer as the first black matrix; the capacitor electrode is disposed on the second black matrix and disposed in the same layer as the source electrode and the drain electrode, wherein the second insulating layer further covers the capacitor electrode, and the pixel electrode passes through The second insulating layer is electrically connected to the capacitor electrode.
  • a contact hole is formed on the first black matrix and the second black matrix, respectively, such that the source electrode and the drain electrode contact the active layer via the contact hole on the first black matrix, and the capacitive electrode contacts the second black matrix
  • the hole contacts the first insulating layer.
  • the TFT substrate further includes: a color resist layer disposed between the pixel electrode and the second insulating layer; and an insulating protective layer disposed between the color resist layer and the pixel electrode.
  • first contact hole and the second contact hole are respectively formed at a position corresponding to one of the source electrode and the drain electrode and a position corresponding to the capacitor electrode of the color resist layer, wherein the first contact hole makes the second insulating layer Exposed, the second contact hole passes through the second insulating layer, so that the capacitor electrode is exposed; the insulating protective layer is further disposed in the first contact hole and the second contact hole; the insulating protective layer and the second insulating layer in the first contact hole Forming a third contact hole, the insulating protective layer is disposed on the second insulating layer in the second contact hole, wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode through the third contact hole, and passes through the second contact The hole is electrically connected to the capacitor electrode.
  • the present invention forms a black matrix on the active layer of the TFT substrate, and further forms a source electrode and a drain electrode on the black matrix.
  • the black matrix can prevent the corresponding light from passing through when the panel formed of the TFT substrate is bent or the like, and the light shielding effect is ensured.
  • 1 is a shading effect diagram of a black matrix when the panel of the prior art is not bent
  • FIG. 3 is a schematic structural diagram of a TFT substrate according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural view of one of the pixel units of the TFT substrate shown in FIG. 3;
  • Figure 5 is a cross-sectional view of the pixel unit shown in Figure 4 taken along the line EF;
  • Figure 6 is an enlarged view of a region A shown in Figure 5;
  • Figure 7 is an enlarged view of a region B shown in Figure 5;
  • FIG. 8 is a light-shielding effect diagram of a black matrix when a panel composed of a TFT substrate according to an embodiment of the present invention is bent;
  • Figure 9 is a cross-sectional view of the pixel unit shown in Figure 4 taken along the dashed line of CD;
  • FIG. 10 is a flowchart of a method for manufacturing a TFT substrate according to an embodiment of the present invention.
  • 11-12 are process flow diagrams of the method of manufacturing the TFT substrate shown in FIG.
  • FIG. 3 is a schematic structural diagram of a TFT substrate according to an embodiment of the present invention.
  • the TFT substrate 10 of the embodiment of the present invention includes a plurality of pixel units 110, wherein each of the pixel units 110 has the same structure.
  • the structure of one of the pixel units 110 will be exemplified below.
  • FIG. 4 is a schematic structural view of one of the pixel units of the TFT substrate shown in FIG. 3.
  • FIG. 5 is a cross-sectional view of the pixel unit shown in FIG. 4 along the EF dotted line
  • FIG. 6 is FIG. An enlarged view of the area A shown
  • FIG. 7 is an enlarged view of the area B shown in FIG. 5.
  • the pixel unit 110 of the embodiment of the present invention includes a substrate 11, a gate electrode 12, a first insulating layer 13, an active layer 14, a black matrix 150, a source electrode 16, a drain electrode 17, and a first Two insulating layers 18 and pixel electrodes 19.
  • the gate electrode 12 is disposed on the substrate 11.
  • the first insulating layer 13 and the active layer 14 are sequentially disposed on the gate electrode 12.
  • the black matrix 150 is disposed on the active layer 14.
  • the source electrode 16 and the drain electrode 17 are disposed on the black matrix 150.
  • the second insulating layer 18 is disposed on the source electrode 16 and the drain electrode 17.
  • the pixel electrode 19 is ITO (Indium Tin Oxide An indium tin oxide transparent electrode is disposed on the second insulating layer 18, and the pixel electrode 19 is electrically connected to the drain electrode 17 via the second insulating layer 18. In other embodiments, the pixel electrode 19 can also be electrically connected to the source electrode 16 via the second insulating layer 18 .
  • the black matrix 150 is disposed on the TFT substrate 10 side, when the panel composed of the TFT substrate 10 is bent, the shading effect of the black matrix 150 is not affected, and the light transmission phenomenon is reduced, as shown in the figure. As shown in Fig. 8, the contrast of the panel composed of the TFT substrate 10 is improved.
  • the black matrix 150 is usually composed of a black resin material
  • the process temperature of the active layer 14 is usually around 400 ° C, and the black resin material is rapidly aged or even carbonized at this temperature, and the present invention sets the black matrix 150 at On the active layer 14, the black matrix 150 is formed after the active layer 14 is formed, thereby avoiding the phenomenon that the black matrix 150 is rapidly aging or igniting, on the one hand, ensuring the smooth progress of the process, and on the other hand, the black matrix 150 is ensured. Performance.
  • FIG. 9 is a cross-sectional view of the pixel unit shown in FIG. 4 along the CD dotted line.
  • the pixel unit 110 of the TFT substrate 10 further includes a scanning line S, a data line D, and a black matrix 151.
  • the scan line S is disposed on the substrate 11 and disposed in the same layer as the gate electrode 12, wherein the first insulating layer 13 further covers the scan line S, and the active layer 14 does not cover the scan line S.
  • the black matrix 151 is disposed on the scanning line S and disposed in the same layer as the black matrix 150.
  • the data line D is disposed on the black matrix 151 and disposed in the same layer as the source electrode 16 and the drain electrode 17. In this embodiment, since the first insulating layer 13 covers the scan line S, the black matrix 151 is specifically disposed on the first insulating layer 13.
  • the black matrix 151 is disposed between the data line D and the scan line S, the insulation between the data line D and the scan line S is strengthened, and the coupling capacitance between the data line D and the scan line S is reduced. , thereby improving the stability of the information transmitted by the data line D and the scan line S.
  • the pixel unit 110 of the TFT substrate 10 further includes capacitor electrodes 111 and 112 constituting a common capacitance.
  • the capacitor electrode 112 is disposed on the substrate 11 and disposed in the same layer as the scan line S and the gate electrode 12.
  • the first insulating layer 13 further covers the capacitor electrode 112.
  • the black matrix 151 is further disposed on the corresponding capacitor electrode 112 of the first insulating layer 13.
  • the capacitor electrode 111 is disposed on the black matrix 151 and disposed in the same layer as the source electrode 16 and the drain electrode 17, wherein the second insulating layer 18 further covers the capacitor electrode 111, and the pixel electrode 19 is electrically connected to the capacitor electrode 111 via the second insulating layer 18. connection.
  • contact holes M1 and M2 are formed on the black matrix 150 and the black matrix 151, respectively, so that the source electrode 16 and the drain electrode 17 are in contact with the contact hole M1 on the black matrix 150.
  • the source layer 14 and the capacitor electrode 111 contact the first insulating layer 13 via the contact hole M2 on the black matrix 151.
  • the TFT substrate 10 further includes a color resist layer 113 and an insulating protective layer 114.
  • the color resist layer 113 is disposed between the pixel electrode 19 and the second insulating layer 18.
  • the insulating protective layer 114 is disposed between the color resist layer 113 and the pixel electrode 19.
  • the color resist layer 113 is composed of red, green, and blue (R, G, and B) materials. Since the insulating protective layer 114 is formed on the color resist layer 113, the color resist layer 113 and its covered elements can be effectively protected.
  • the first contact hole M3 and the second contact hole M4 are respectively formed at a position corresponding to the drain electrode 17 of the color resist layer 113 and a position corresponding to the capacitor electrode 111, wherein the first contact hole M3 makes the second insulating layer 18 Exposed, the second contact hole M4 passes through the second insulating layer 18, so that the capacitor electrode 111 is exposed (for details, please refer to the following drawing).
  • the insulating protective layer 114 is further disposed in the first contact hole M3 and the second contact hole M4.
  • the insulating protective layer 114 and the second insulating layer 18 in the first contact hole M3 form a third contact hole M5, and the third contact hole M5 exposes the drain electrode 17.
  • the insulating protective layer 114 is disposed on the second insulating layer 18 in the second contact hole M4, which does not cover the second contact hole M4.
  • the pixel electrode 19 is electrically connected to the drain electrode 17 through the third contact hole M5, and is electrically connected to the capacitor electrode 111 through the second contact hole M4.
  • the first contact hole M3 may be formed at a position corresponding to the source electrode 16 of the color resist layer 113 to expose the second insulating layer 18, and the third contact hole M5 is also corresponding to the source electrode 16. Positionally, the third contact hole M5 exposes the source electrode 16, and the pixel electrode 19 can be electrically connected to the source electrode 16 through the third contact hole M5.
  • the black matrix 150 on the side of the TFT substrate 10, when the panel composed of the TFT substrate 10 is bent, the shading effect of the black matrix 15 is not affected, and the light transmission phenomenon is reduced. The contrast of the panel composed of the TFT substrate 10 is improved.
  • the black matrix 151 between the data line D and the scanning line S by providing the black matrix 151 between the data line D and the scanning line S, the insulation between the data line D and the scanning line S is strengthened, and the coupling capacitance between the data line D and the scanning line S is lowered. Thereby, the stability of the information transmitted by the data line D and the scan line S is improved.
  • the present invention also provides a method of manufacturing a TFT substrate based on the foregoing TFT substrate.
  • a TFT substrate based on the foregoing TFT substrate.
  • FIG. 10 is a flowchart of a method of manufacturing a TFT substrate
  • FIGS. 11 and 12 are process diagrams corresponding to the manufacturing method shown in FIG.
  • the manufacturing method of the TFT substrate 10 of the embodiment of the present invention includes the following steps:
  • Step S1 providing a substrate 11.
  • Step S2 A gate electrode 12 is formed on the substrate 11.
  • a capacitor electrode 112 and a scanning line S are further formed on the substrate 11.
  • Step S3 The first insulating layer 13 and the active layer 14 are sequentially formed on the gate electrode 12.
  • the first insulating layer 13 further covers the capacitor electrode 112 and the scan line S, and the active layer 14 does not cover the capacitor electrode 112 and the scan line S.
  • Step S4 A black matrix 150 is formed on the active layer 14.
  • a black matrix 151 disposed in the same layer as the black matrix 150 is further formed on the scan line S and the capacitor electrode 112. Since the first insulating layer 13 covers the capacitor electrode 112 and the scan line S, the step is actually formed on the first insulating layer 13 corresponding to the scan line S and the capacitor electrode 112 in the same layer as the black matrix 150. Black matrix 151.
  • Step S5 The source electrode 16 and the drain electrode 17 are formed on the black matrix 150.
  • a data line D (shown in FIG. 12) and a capacitor electrode 111 which are provided in the same layer as the source electrode 16 and the drain electrode 17 are further formed on the black matrix 151.
  • step S4 contact holes M1 and M2 are further formed on the black matrix 150 and the black matrix 151, respectively, so that the source electrode 16 and the drain electrode 17 formed in this step are contacted via the contact hole M1 on the black matrix 150.
  • the layer 14, the capacitor electrode 111 contacts the first insulating layer 13 via the contact hole M2 on the black matrix 151
  • Step S6 A second insulating layer 18 is formed on the source electrode 16 and the drain electrode 17.
  • the second insulating layer 18 further covers the data line D and the capacitor electrode 111.
  • Step S7 A pixel electrode 19 is formed on the second insulating layer 18, and the pixel electrode 19 is electrically connected to one of the source electrode 16 and the drain electrode 17 via the second insulating layer 18.
  • the pixel electrode 19 is electrically connected to the drain electrode 17 via the second insulating layer 18.
  • the pixel electrode 19 is also electrically connected to the capacitor electrode 111 via the second insulating layer 18.
  • the color resist layer 113 is formed on the second insulating layer 18, the insulating protective layer 114 is further formed on the color resist layer 113, and finally the pixel electrode 19 is formed on the insulating protective layer 114. That is, the color resist layer 113 is formed between the pixel electrode 19 and the second insulating layer 18, and the insulating protective layer 114 is formed between the color resist layer 113 and the pixel electrode 19. Since the insulating protective layer 114 is formed on the color resist layer 113, the color resist layer 113 and its covered elements can be effectively protected.
  • the specific implementation manner in which the pixel electrode 19 is electrically connected to the drain electrode 17 via the second insulating layer 18 and electrically connected to the capacitor electrode 111 is as follows:
  • first contact hole M3 and a second contact hole M4 at a position corresponding to the drain electrode 17 and a position corresponding to the capacitor electrode 111 of the color resist layer 113, respectively, while forming the color resist layer 113, wherein the first contact hole M3
  • the second insulating layer 18 is exposed, and the second contact hole M4 passes through the second insulating layer 18, so that the capacitor electrode 111 is exposed.
  • the insulating protective layer 114 is formed on the color resist layer, the insulating protective layer 114 is further formed in the first contact hole M3 and the second contact hole M4.
  • the insulating contact layer 114 and the second insulating layer 18 of the first contact hole M3 form a third contact hole M5, and the insulating protective layer 114 in the second contact hole M4 is disposed on the second insulating layer 18, which is not The second contact hole M4 is covered.
  • the pixel electrode 19 is electrically connected to the drain electrode 17 through the third contact hole M5, and is electrically connected to the capacitor electrode 111 through the second contact hole M4.
  • the first contact hole M3 may also be formed at a position corresponding to the source electrode 16 of the color resist layer 113 such that the third contact hole M5 is also at a position corresponding to the source electrode 16, so that the pixel electrode 19 passes through the third The contact hole M5 is electrically connected to the source electrode 16.
  • the black matrix 150 on the side of the TFT substrate 10, when the panel composed of the TFT substrate 10 is bent, the shading effect of the black matrix 150 is not affected, and the light transmission phenomenon is reduced. The contrast of the panel composed of the TFT substrate 10 is improved.
  • the black matrixes 150 and 151 are usually composed of a black resin material
  • the process temperature of the active layer 14 is usually about 400 ° C, and the black resin material is rapidly aged or even carbonized at this temperature, and the present invention is formed because The black matrixes 15 and 151 are formed after the source layer 14, thereby avoiding the phenomenon that the black matrix 15 is rapidly aged or ignited, on the one hand, ensuring smooth progress of the process, and on the other hand, ensuring the performance of the black matrixes 150 and 151.
  • the black matrix 151 between the data line D and the scanning line S by providing the black matrix 151 between the data line D and the scanning line S, the insulation between the data line D and the scanning line S is strengthened, and the coupling capacitance between the data line D and the scanning line S is lowered. Thereby, the stability of the information transmitted by the data line D and the scan line S is improved.

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Abstract

一种TFT基板及其制造方法。该方法包括以下步骤：提供一基板（11）；在基板（11）上形成栅电极（12）；在栅电极（12）上依次形成第一绝缘层（13）以及有源层（14）；在有源层（14）上形成第一黑色矩阵（150）；在第一黑色矩阵（150）上形成源电极（16）和漏电极（17）；在源电极（16）和漏电极（17）上形成第二绝缘层（18）；在第二绝缘层（18）上形成像素电极（19），像素电极（19）经第二绝缘层（18）与源电极（16）和漏电极（17）中的一者电连接。通过上述方式，能够保证该TFT基板组成的显示面板的遮光效果，并且降低数据线和扫描线之间的耦合电容。

Description

一种TFT基板及其制造方法
【技术领域】
本发明涉及显示技术领域，尤其是涉及一种TFT基板及其制造方法。
【背景技术】
曲面电视由于具有更出色的对比度、更广泛的视角以及沉浸式体验，为用户提供更具深度的观赏感受，因此其越来越受到人们的热爱。
在曲面电视应用中，由于面板会有一定程度的弯曲，使得组成面板的TFT（薄膜晶体管，Thin Film Transistor）基板和CF（彩色滤光片，color filter）基板之间会产生相对错位，导致设置在CF基板上的黑色矩阵（Black Matrix，BM）的光遮效果受到影响。具体请参阅图1和图2所示，其中，图1是面板100没有弯曲时，黑色矩阵101的遮光情况，图2为面板100弯曲后，黑色矩阵101的遮光情况，由图1和图2可知，在面板100弯曲后，有部分光从黑色矩阵101旁边射出，产生漏光现象，影响黑色矩阵101的光遮效果，从而会降低面板的对比度。
【发明内容】
本发明主要解决的技术问题是提供一种TFT基板及其制造方法，能够保证遮光效果，并且降低数据线和扫描线之间的耦合电容。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种TFT基板的制造方法，该方法包括以下步骤：提供一基板；在基板上形成栅电极；在栅电极上依次形成第一绝缘层以及有源层；在有源层上形成第一黑色矩阵；在第一黑色矩阵上形成源电极和漏电极；在源电极和漏电极上形成第二绝缘层；在第二绝缘层上形成像素电极，像素电极经第二绝缘层与源电极和漏电极中的一者电连接；
其中，在基板上形成栅电极的步骤还包括：在基板上形成与栅电极同层设置的扫描线，其中第一绝缘层进一步覆盖于扫描线上，有源层未覆盖于扫描线上；在有源层上形成第一黑色矩阵的步骤还包括：在扫描线上形成与第一黑色矩阵同层设置的第二黑色矩阵；在第一黑色矩阵上形成源电极和漏电极的步骤进一步包括：在第二黑色矩阵上进一步形成与源电极和漏电极同层设置的电容电极，其中第二绝缘层进一步覆盖于电容电极上，像素电极经第二绝缘层与电容电极电连接；
其中，第一黑色矩阵和第二黑色矩阵由黑色树脂材料组成。
其中，在有源层上形成第一黑色矩阵的步骤还包括：
分别在第一黑色矩阵和第二黑色矩阵上形成接触孔，以使源电极和漏电极经第一黑色矩阵上的接触孔接触有源层，电容电极经第二黑色矩阵上的接触孔接触第一绝缘层。
其中，方法进一步包括：在像素电极与第二绝缘层之间形成色阻层；在色阻层与像素电极之间进一步形成绝缘保护层。
其中，在像素电极与第二绝缘层之间形成色阻层的步骤进一步包括：分别在色阻层的对应于源电极和漏电极中的一者的位置以及对应于电容电极的位置形成第一接触孔和第二接触孔，其中，第一接触孔使得第二绝缘层外露，第二接触孔穿过第二绝缘层，使得电容电极外露；在色阻层与像素电极之间进一步形成绝缘保护层的步骤进一步包括：在第一接触孔和第二接触孔内形成绝缘保护层；在第一接触孔内的绝缘保护层和第二绝缘层形成第三接触孔，在第二接触孔内绝缘保护层设置在第二绝缘层上，其中像素电极通过第三接触孔与源电极和漏电极中的一者电连接，并通过和第二接触孔与电容电极电连接。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种TFT基板的制造方法，该方法包括以下步骤：提供一基板；在基板上形成栅电极；在栅电极上依次形成第一绝缘层以及有源层；在有源层上形成第一黑色矩阵；在第一黑色矩阵上形成源电极和漏电极；在源电极和漏电极上形成第二绝缘层；在第二绝缘层上形成像素电极，像素电极经第二绝缘层与源电极和漏电极中的一者电连接。
其中，在基板上形成栅电极的步骤还包括：在基板上形成与栅电极同层设置的扫描线，其中第一绝缘层进一步覆盖于扫描线上，有源层未覆盖于扫描线上；在有源层上形成第一黑色矩阵的步骤还包括：在扫描线上形成与第一黑色矩阵同层设置的第二黑色矩阵；在第一黑色矩阵上形成源电极和漏电极的步骤进一步包括：在第二黑色矩阵上进一步形成与源电极和漏电极同层设置的电容电极，其中第二绝缘层进一步覆盖于电容电极上，像素电极经第二绝缘层与电容电极电连接。
其中，在有源层上形成第一黑色矩阵的步骤还包括：
分别在第一黑色矩阵和第二黑色矩阵上形成接触孔，以使源电极和漏电极经第一黑色矩阵上的接触孔接触有源层，电容电极经第二黑色矩阵上的接触孔接触第一绝缘层。
其中，方法进一步包括：在像素电极与第二绝缘层之间形成色阻层；在色阻层与像素电极之间进一步形成绝缘保护层。
其中，在像素电极与第二绝缘层之间形成色阻层的步骤进一步包括：分别在色阻层的对应于源电极和漏电极中的一者的位置以及对应于电容电极的位置形成第一接触孔和第二接触孔，其中，第一接触孔使得第二绝缘层外露，第二接触孔穿过第二绝缘层，使得电容电极外露；在色阻层与像素电极之间进一步形成绝缘保护层的步骤进一步包括：在第一接触孔和第二接触孔内形成绝缘保护层；在第一接触孔内的绝缘保护层和第二绝缘层形成第三接触孔，在第二接触孔内绝缘保护层设置在第二绝缘层上，其中像素电极通过第三接触孔与源电极和漏电极中的一者电连接，并通过和第二接触孔与电容电极电连接。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种TFT基板，该TFT基板包括：基板；栅电极，设置在基板上；第一绝缘层以及有源层，依次设置在栅电极上；第一黑色矩阵，设置在有源层上；源电极和漏电极，设置在第一黑色矩阵上；第二绝缘层，设置在源电极和漏电极上；像素电极，设置在第二绝缘层上，像素电极经第二绝缘层与源电极和漏电极中的一者电连接。
其中，TFT基板还包括：扫描线，设置在基板上并与栅电极同层设置，其中第一绝缘层进一步覆盖于扫描线上，有源层未覆盖于扫描线上；第二黑色矩阵，设置在扫描线上并与第一黑色矩阵同层设置；电容电极，设置在第二黑色矩阵上并与源电极和漏电极同层设置，其中第二绝缘层进一步覆盖于电容电极上，像素电极经第二绝缘层与电容电极电连接。
其中，在第一黑色矩阵和第二黑色矩阵上分别形成有接触孔，以使源电极和漏电极经第一黑色矩阵上的接触孔接触有源层，电容电极经第二黑色矩阵上的接触孔接触第一绝缘层。
其中，TFT基板进一步包括：色阻层，设置在像素电极与第二绝缘层之间；绝缘保护层，设置在色阻层与像素电极之间。
其中，分别在色阻层的对应于源电极和漏电极中的一者的位置以及对应于电容电极的位置形成第一接触孔和第二接触孔，其中，第一接触孔使得第二绝缘层外露，第二接触孔穿过第二绝缘层，使得电容电极外露；绝缘保护层进一步设置在第一接触孔和第二接触孔内；在第一接触孔内的绝缘保护层和第二绝缘层形成第三接触孔，在第二接触孔内绝缘保护层设置在第二绝缘层上，其中像素电极通过第三接触孔与源电极和漏电极中的一者电连接，并通过和第二接触孔与电容电极电连接。
本发明的有益效果是：区别于现有技术的情况，本发明通过在TFT基板的有源层上形成黑色矩阵，并进一步在黑色矩阵上形成源电极和漏电极。通过上述方式，使得在TFT基板构成的面板弯曲等情况时黑色矩阵仍然能够防止对应的光线通过，保证了遮光效果。
【附图说明】
图1是现有技术的面板没有弯曲时黑色矩阵的遮光效果图；
图2是现有技术的面板在发生弯曲时黑色矩阵的遮光效果图；
图3本发明实施例提供的一种TFT基板的结构示意图；
图4是图3所示的TFT基板的其中一个像素单元的结构示意图；
图5是图4所示的像素单元沿EF虚线的剖视图；
图6是图5所示的区域A的放大图；
图7是图5所示的区域B的放大图；
图8本发明实施例的TFT基板组成的面板在发生弯曲时黑色矩阵的遮光效果图；
图9是图4所示的像素单元沿CD虚线的剖视图；
图10是本发明实施例提供的一种TFT基板的制造方法的流程图；
图11-12是图10所示的TFT基板制造方法的工艺制程图。
【具体实施方式】
请参阅图3，图3是本发明实施例提供的一种TFT基板的结构示意图，本发明实施例的TFT基板10包括多个像素单元110，其中每个像素单元110的结构均相同。以下将以其中一个像素单元110的结构举例说明。
请一并参阅图4-图7，图4是图3所示的TFT基板的其中一个像素单元的结构示意图，图5是图4所示的像素单元沿EF虚线的剖视图，图6是图5所示的区域A的放大图，图7是图5所示的区域B的放大图。首先如图4和图5所示，本发明实施例的像素单元110包括基板11、栅电极12、第一绝缘层13、有源层14、黑色矩阵150、源电极16、漏电极17、第二绝缘层18以及像素电极19。
其中，栅电极12设置在基板11上。第一绝缘层13以及有源层14依次设置在栅电极12上。黑色矩阵150设置在有源层14上。源电极16和漏电极17设置在黑色矩阵150上。第二绝缘层18设置在源电极16和漏电极17上。像素电极19为ITO（Indium Tin Oxide ，铟锡氧化物）透明电极，其设置在第二绝缘层18上，像素电极19经第二绝缘层18与漏电极17电连接。其中，在其他实施例中，像素电极19还可以经第二绝缘层18与源电极16电连接。
因此，在本实施例中，由于将黑色矩阵150设置在TFT基板10侧，使得在TFT基板10组成的面板发生弯曲时，黑色矩阵150的遮光效果不受影响，减小透光现象，如图8所示，因此提高了TFT基板10组成的面板的对比度。
另一方面，由于黑色矩阵150通常由黑色树脂材料组成，有源层14的制程温度通常在400℃左右，黑色树脂材料在该温度下会急速老化甚至碳化起火，本发明将黑色矩阵150设置在有源层14上，使得在形成有源层14之后才形成黑色矩阵150，因此避免了黑色矩阵150急速老化或起火的现象，一方面保证了制程的顺利进行，另一方面保证了黑色矩阵150的性能。
请一并参阅图9，图9是图4所示的像素单元沿CD虚线的剖视图。如图4和图9所示，TFT基板10的像素单元110还包括扫描线S、数据线D和黑色矩阵151。
其中，扫描线S设置在基板11上并与栅电极12同层设置，其中第一绝缘层13进一步覆盖于扫描线S上，有源层14未覆盖于扫描线S上。黑色矩阵151设置在扫描线S上并与黑色矩阵150同层设置。数据线D设置在黑色矩阵151上，并与源电极16以及漏电极17同层设置。本实施例中，由于第一绝缘层13覆盖扫描线S，因此，黑色矩阵151具体是设置在第一绝缘层13上。本实施例中，由于数据线D和扫描线S之间设置了黑色矩阵151，使得数据线D和扫描线S之间的绝缘性加强，降低了数据线D和扫描线S之间的耦合电容，从而提高了数据线D和扫描线S传输信息的稳定性。
请再参阅图5所示，TFT基板10的像素单元110还包括组成公共电容的电容电极111和112。其中，电容电极112设置在基板11上，并与扫描线S以及栅电极12同层设置。第一绝缘层13进一步覆盖于电容电极112上。黑色矩阵151进一步设置在第一绝缘层13对应的电容电极112上。电容电极111设置在黑色矩阵151上并与源电极16和漏电极17同层设置，其中第二绝缘层18进一步覆盖于电容电极111上，像素电极19经第二绝缘层18与电容电极111电连接。
请一并参阅图6和图7所示，在黑色矩阵150和黑色矩阵151上分别形成有接触孔M1和M2，以使源电极16和漏电极17经黑色矩阵150上的接触孔M1接触有源层14，电容电极111经黑色矩阵151上的接触孔M2接触第一绝缘层13。
本实施例中，TFT基板10进一步包括色阻层113和绝缘保护层114。其中，色阻层113设置在像素电极19与第二绝缘层18之间。绝缘保护层114设置在色阻层113与像素电极19之间。其中，色阻层113由红、绿以及蓝（R、G以及B）材料组成。由于在色阻层113上形成了绝缘保护层114，使得可以有效保护色阻层113及其覆盖的元件。
其中，分别在色阻层113的对应于漏电极17的位置以及对应于电容电极111的位置形成第一接触孔M3和第二接触孔M4，其中，第一接触孔M3使得第二绝缘层18外露，第二接触孔M4穿过第二绝缘层18，使得电容电极111外露（具体体现请参阅后文的制成图）。
绝缘保护层114进一步设置在第一接触孔M3和第二接触孔M4内。在第一接触孔M3内的绝缘保护层114和第二绝缘层18形成第三接触孔M5，第三接触孔M5将漏电极17外露。在第二接触孔M4内绝缘保护层114设置在第二绝缘层18上，其并未覆盖第二接触孔M4。其中像素电极19通过第三接触孔M5与漏电极17电连接，并通过和第二接触孔M4与电容电极111电连接。
在其他实施例中，还可以在色阻层113的对应于源电极16的位置形成第一接触孔M3，以外露第二绝缘层18，则第三接触孔M5同样是对应于源电极16的位置设置，第三接触孔M5将源电极16外露，像素电极19可通过第三接触孔M5与源电极16电连接。
承前所述，本实施例中，通过将黑色矩阵150设置在TFT基板10侧，使得在TFT基板10组成的面板发生弯曲时，黑色矩阵15的遮光效果不受影响，减小透光现象，因此提高了TFT基板10组成的面板的对比度。
另一方面，通过在数据线D和扫描线S之间设置黑色矩阵151，使得数据线D和扫描线S之间的绝缘性加强，降低了数据线D和扫描线S之间的耦合电容，从而提高了数据线D和扫描线S传输信息的稳定性。
本发明还基于前文的TFT基板设置了一种TFT基板的制造方法，具体请参阅图10-图12。
其中，图10是TFT基板制造方法的流程图，图11和图12是图10所示的制造方法对应的工艺制程图。如图10-图12所示，本发明实施例的TFT基板10的制造方法包括以下步骤：
步骤S1：提供一基板11。
步骤S2：在基板11上形成栅电极12。
其中，还进一步在基板11上形成与栅电极12同层设置的电容电极112和扫描线S（如图12所示）。
步骤S3：在栅电极12上依次形成第一绝缘层13以及有源层14。
其中，第一绝缘层13进一步覆盖于电容电极112和扫描线S上，有源层14未覆盖于电容电极112和扫描线S上。
步骤S4：在有源层14上形成黑色矩阵150。
本步骤中，还进一步在扫描线S和电容电极112上形成与黑色矩阵150同层设置的黑色矩阵151。由于，第一绝缘层13覆盖于电容电极112和扫描线S上，因此，本步骤实际是分别在扫描线S和电容电极112对应的第一绝缘层13上形成与黑色矩阵150同层设置的黑色矩阵151。
步骤S5：在黑色矩阵150上形成源电极16和漏电极17。
在本步骤中，进一步在黑色矩阵151上形成与源电极16和漏电极17同层设置的数据线D（如图12所示）和电容电极111。
其中，在步骤S4中，进一步分别在黑色矩阵150和黑色矩阵151上形成接触孔M1和M2，以使本步骤形成的源电极16和漏电极17经黑色矩阵150上的接触孔M1接触有源层14，电容电极111经黑色矩阵151上的接触孔M2接触第一绝缘层13
步骤S6：在源电极16和漏电极17上形成第二绝缘层18。
其中，第二绝缘层18进一步覆盖于数据线D和电容电极111上。
步骤S7：在第二绝缘层18上形成像素电极19，像素电极19经第二绝缘层18与源电极16和漏电极17中的一者电连接。
本实施例中，像素电极19是经第二绝缘层18与漏电极17电连接。像素电极19还经第二绝缘层18与电容电极111电连接。
本步骤中，在形成像素电极19之前，在第二绝缘层18上形成色阻层113，进一步在色阻层113上形成绝缘保护层114，最后在绝缘保护层114上形成像素电极19。也就是说，在像素电极19与第二绝缘层18之间形成色阻层113，在色阻层113与像素电极19之间形成绝缘保护层114。由于在色阻层113上形成了绝缘保护层114，使得可以有效保护色阻层113及其覆盖的元件。
本实施例中，像素电极19经第二绝缘层18与漏电极17电连接以及与电容电极111电连接的具体实现方式如下：
在形成色阻层113的同时分别在色阻层113的对应于漏电极17的位置以及对应于电容电极111的位置形成第一接触孔M3和第二接触孔M4，其中，第一接触孔M3使得第二绝缘层18外露，第二接触孔M4穿过第二绝缘层18，使得电容电极111外露。
在色阻层上形成绝缘保护层114的同时，进一步在第一接触孔M3和第二接触孔M4内形成绝缘保护层114。其中，在第一接触孔M3的绝缘保护层114和第二绝缘层18形成第三接触孔M5，在第二接触孔M4内的绝缘保护层114设置在第二绝缘层18上，其并未覆盖第二接触孔M4。其中像素电极19通过第三接触孔M5与漏电极17电连接，并通过第二接触孔M4与电容电极111电连接。
在其他实施例中，第一接触孔M3也可以在色阻层113的对应于源电极16的位置形成，使得第三接触孔M5也是对应于源电极16的位置，从而像素电极19通过第三接触孔M5是与源电极16电连接的。
承前所述，本实施例中，通过将黑色矩阵150设置在TFT基板10侧，使得在TFT基板10组成的面板发生弯曲时，黑色矩阵150的遮光效果不受影响，减小透光现象，因此提高了TFT基板10组成的面板的对比度。
另一方面，由于黑色矩阵150和151通常由黑色树脂材料组成，有源层14的制程温度通常在400℃左右，黑色树脂材料在该温度下会急速老化甚至碳化起火，本发明由于在形成有源层14之后才形成黑色矩阵15和151，因此避免了黑色矩阵15急速老化或起火的现象，一方面保证了制程的顺利进行，另一方面保证了黑色矩阵150和151的性能。
再一方面，通过在数据线D和扫描线S之间设置黑色矩阵151，使得数据线D和扫描线S之间的绝缘性加强，降低了数据线D和扫描线S之间的耦合电容，从而提高了数据线D和扫描线S传输信息的稳定性。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (14)

  1. 一种TFT基板的制造方法，其中，所述方法包括以下步骤：
    提供一基板；
    在所述基板上形成栅电极；
    在所述栅电极上依次形成第一绝缘层以及有源层；
    在所述有源层上形成第一黑色矩阵；
    在所述第一黑色矩阵上形成源电极和漏电极；
    在所述源电极和漏电极上形成第二绝缘层；
    在所述第二绝缘层上形成像素电极，所述像素电极经所述第二绝缘层与所述源电极和漏电极中的一者电连接；
    其中，在所述基板上形成栅电极的步骤还包括：
    在所述基板上形成与所述栅电极同层设置的扫描线，其中所述第一绝缘层进一步覆盖于所述扫描线上，所述有源层未覆盖于所述扫描线上；
    在所述有源层上形成第一黑色矩阵的步骤还包括：
    在所述扫描线上形成与所述第一黑色矩阵同层设置的第二黑色矩阵；
    在所述第一黑色矩阵上形成源电极和漏电极的步骤进一步包括：
    在所述第二黑色矩阵上进一步形成与所述源电极和漏电极同层设置的电容电极，其中所述第二绝缘层进一步覆盖于所述电容电极上，所述像素电极经所述第二绝缘层与所述电容电极电连接；
    其中，所述第一黑色矩阵和所述第二黑色矩阵由黑色树脂材料组成。
  2. 根据权利要求1所述的方法，其中，在所述有源层上形成第一黑色矩阵的步骤还包括：
    分别在所述第一黑色矩阵和所述第二黑色矩阵上形成接触孔，以使所述源电极和漏电极经所述第一黑色矩阵上的接触孔接触所述有源层，所述电容电极经所述第二黑色矩阵上的接触孔接触所述第一绝缘层。
  3. 根据权利要求1所述的方法，其中，所述方法进一步包括：
    在所述像素电极与所述第二绝缘层之间形成色阻层；
    在所述色阻层与所述像素电极之间进一步形成绝缘保护层。
  4. 根据权利要求3所述的方法，其中，所述在所述像素电极与所述第二绝缘层之间形成色阻层的步骤进一步包括：
    分别在所述色阻层的对应于所述源电极和漏电极中的所述一者的位置以及对应于所述电容电极的位置形成第一接触孔和第二接触孔，其中，所述第一接触孔使得所述第二绝缘层外露，所述第二接触孔穿过所述第二绝缘层，使得所述电容电极外露；
    所述在所述色阻层与所述像素电极之间进一步形成绝缘保护层的步骤进一步包括：
    在所述第一接触孔和所述第二接触孔内形成所述绝缘保护层；
    在所述第一接触孔内的所述绝缘保护层和所述第二绝缘层形成第三接触孔，在所述第二接触孔内的绝缘保护层设置在所述第二绝缘层上，其中所述像素电极通过所述第三接触孔与所述源电极和漏电极中的所述一者电连接，并通过和所述第二接触孔与所述电容电极电连接。
  5. 一种TFT基板的制造方法，其中，所述方法包括以下步骤：
    提供一基板；
    在所述基板上形成栅电极；
    在所述栅电极上依次形成第一绝缘层以及有源层；
    在所述有源层上形成第一黑色矩阵；
    在所述第一黑色矩阵上形成源电极和漏电极；
    在所述源电极和漏电极上形成第二绝缘层；
    在所述第二绝缘层上形成像素电极，所述像素电极经所述第二绝缘层与所述源电极和漏电极中的一者电连接。
  6. 根据权利要求5所述的方法，其中，在所述基板上形成栅电极的步骤还包括：
    在所述基板上形成与所述栅电极同层设置的扫描线，其中所述第一绝缘层进一步覆盖于所述扫描线上，所述有源层未覆盖于所述扫描线上；
    在所述有源层上形成第一黑色矩阵的步骤还包括：
    在所述扫描线上形成与所述第一黑色矩阵同层设置的第二黑色矩阵；
    在所述第一黑色矩阵上形成源电极和漏电极的步骤进一步包括：
    在所述第二黑色矩阵上进一步形成与所述源电极和漏电极同层设置的电容电极，其中所述第二绝缘层进一步覆盖于所述电容电极上，所述像素电极经所述第二绝缘层与所述电容电极电连接。
  7. 根据权利要求6所述的方法，其中，在所述有源层上形成第一黑色矩阵的步骤还包括：
    分别在所述第一黑色矩阵和所述第二黑色矩阵上形成接触孔，以使所述源电极和漏电极经所述第一黑色矩阵上的接触孔接触所述有源层，所述电容电极经所述第二黑色矩阵上的接触孔接触所述第一绝缘层。
  8. 根据权利要求6所述的方法，其中，所述方法进一步包括：
    在所述像素电极与所述第二绝缘层之间形成色阻层；
    在所述色阻层与所述像素电极之间进一步形成绝缘保护层。
  9. 根据权利要求8所述的方法，其中，所述在所述像素电极与所述第二绝缘层之间形成色阻层的步骤进一步包括：
    分别在所述色阻层的对应于所述源电极和漏电极中的所述一者的位置以及对应于所述电容电极的位置形成第一接触孔和第二接触孔，其中，所述第一接触孔使得所述第二绝缘层外露，所述第二接触孔穿过所述第二绝缘层，使得所述电容电极外露；
    所述在所述色阻层与所述像素电极之间进一步形成绝缘保护层的步骤进一步包括：
    在所述第一接触孔和所述第二接触孔内形成所述绝缘保护层；
    在所述第一接触孔内的所述绝缘保护层和所述第二绝缘层形成第三接触孔，在所述第二接触孔内的绝缘保护层设置在所述第二绝缘层上，其中所述像素电极通过所述第三接触孔与所述源电极和漏电极中的所述一者电连接，并通过和所述第二接触孔与所述电容电极电连接。
  10. 一种TFT基板，其中，所述TFT基板包括：
    基板；
    栅电极，设置在所述基板上；
    第一绝缘层以及有源层，依次设置在所述栅电极上；
    第一黑色矩阵，设置在所述有源层上；
    源电极和漏电极，设置在所述第一黑色矩阵上；
    第二绝缘层，设置在所述源电极和漏电极上；
    像素电极，设置在所述第二绝缘层上，所述像素电极经所述第二绝缘层与所述源电极和漏电极中的一者电连接。
  11. 根据权利要求10所述的TFT基板，其中，所述TFT基板还包括：
    扫描线，设置在所述基板上并与所述栅电极同层设置，其中所述第一绝缘层进一步覆盖于所述扫描线上，所述有源层未覆盖于所述扫描线上；
    第二黑色矩阵，设置在所述扫描线上并与所述第一黑色矩阵同层设置；
    电容电极，设置在所述第二黑色矩阵上并与所述源电极和漏电极同层设置，其中所述第二绝缘层进一步覆盖于所述电容电极上，所述像素电极经所述第二绝缘层与所述电容电极电连接。
  12. 根据权利要求11所述的TFT基板，其中，在所述第一黑色矩阵和所述第二黑色矩阵上分别形成有接触孔，以使所述源电极和漏电极经所述第一黑色矩阵上的接触孔接触所述有源层，所述电容电极经所述第二黑色矩阵上的接触孔接触所述第一绝缘层。
  13. 根据权利要求11所述的TFT基板，其中，所述TFT基板进一步包括：
    色阻层，设置在所述像素电极与所述第二绝缘层之间；
    绝缘保护层，设置在色阻层与所述像素电极之间。
  14. 根据权利要求13所述的TFT基板，其中，分别在所述色阻层的对应于所述源电极和漏电极中的所述一者的位置以及对应于所述电容电极的位置形成第一接触孔和第二接触孔，其中，所述第一接触孔使得所述第二绝缘层外露，所述第二接触孔穿过所述第二绝缘层，使得所述电容电极外露；
    所述绝缘保护层进一步设置在所述第一接触孔和所述第二接触孔内；
    在所述第一接触孔内的所述绝缘保护层和所述第二绝缘层形成第三接触孔，在所述第二接触孔内的绝缘保护层设置在所述第二绝缘层上，其中所述像素电极通过所述第三接触孔与所述源电极和漏电极中的所述一者电连接，并通过和所述第二接触孔与所述电容电极电连接。
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