WO2016074353A1 - Boa型液晶面板及其制作方法 - Google Patents

Boa型液晶面板及其制作方法 Download PDF

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Publication number
WO2016074353A1
WO2016074353A1 PCT/CN2015/072377 CN2015072377W WO2016074353A1 WO 2016074353 A1 WO2016074353 A1 WO 2016074353A1 CN 2015072377 W CN2015072377 W CN 2015072377W WO 2016074353 A1 WO2016074353 A1 WO 2016074353A1
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Prior art keywords
substrate
liquid crystal
layer
crystal panel
type liquid
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PCT/CN2015/072377
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English (en)
French (fr)
Inventor
吴川
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/423,128 priority Critical patent/US9684213B2/en
Publication of WO2016074353A1 publication Critical patent/WO2016074353A1/zh
Anticipated expiration legal-status Critical
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/136295—Materials; Compositions; Manufacture processes
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Definitions

  • the present invention relates to the field of display technologies, and in particular, to a BOA type liquid crystal panel and a manufacturing method thereof.
  • Liquid crystal display has many advantages such as thin body, power saving, no radiation, etc., and is widely used, such as mobile phones, personal digital assistants (PDAs), digital cameras, computer screens or laptops. Screen, etc.
  • liquid crystal display devices which include a backlight module and a liquid crystal panel coupled to the backlight module.
  • BM Black Matrix
  • BM On Array black matrix is attached to the array substrate
  • a black matrix 120 is directly formed on the array substrate 100, which increases the film thickness h1 of the BM region of the array substrate 100.
  • 2 is a non-BOA (BM on CF) type structure, that is, the black matrix 120 is disposed on the CF substrate 200, and the film thickness h1 of the BOA type liquid crystal panel in FIG. 1 is larger than that in FIG. The film thickness h2 of the BOA type liquid crystal panel.
  • An object of the present invention is to provide a BOA type liquid crystal panel in which a black matrix of the liquid crystal panel is provided inside a channel formed in advance on a substrate, thereby making the film thickness of the liquid crystal panel uniform and having a good display effect.
  • Another object of the present invention is to provide a method for fabricating a BOA type liquid crystal panel, in which a channel is previously provided on a substrate before a TFT process, and a black matrix is formed in the channel, thereby making the film thickness of the liquid crystal panel uniform and improving.
  • the display of the display is to provide a method for fabricating a BOA type liquid crystal panel, in which a channel is previously provided on a substrate before a TFT process, and a black matrix is formed in the channel, thereby making the film thickness of the liquid crystal panel uniform and improving.
  • the present invention provides a BOA type liquid crystal panel including a first substrate, a second substrate disposed opposite to the first substrate, a black matrix disposed on the first substrate, and disposed on the black a thin film transistor on the matrix, a color resist layer disposed on the second substrate, a common electrode layer disposed on the second substrate and the color resist layer, disposed on the common electrode layer and located on the first substrate a photoresist spacer between the second substrate, and a liquid crystal layer disposed between the first substrate and the second substrate, wherein the first substrate is provided with a channel, and the black matrix is disposed on the channel Internally, the first substrate surface is flush with the black matrix surface.
  • the first substrate and the second substrate are both glass substrates.
  • the first substrate is a TFT substrate
  • the second substrate is a CF substrate.
  • the thin film transistor includes a first metal layer disposed on the first substrate, a gate insulating layer disposed on the first metal layer and covering the first substrate, and a semiconductor disposed on the gate insulating layer a layer, a second metal layer disposed on the semiconductor layer, and an insulating protective layer disposed on the second metal layer and covering the first substrate.
  • the material of the gate insulating layer is silicon nitride.
  • the material of the semiconductor layer is amorphous silicon or polycrystalline silicon.
  • the invention also provides a method for manufacturing a BOA type liquid crystal panel, comprising the following steps:
  • Step 1 providing a first substrate and a second substrate, and cleaning the first substrate and the second substrate;
  • Step 2 forming a channel on the first substrate
  • Step 3 forming a black matrix in the channel
  • Step 4 forming a thin film transistor on the black matrix
  • Step 5 forming a color resist layer on the second substrate, forming a common electrode layer on the second substrate and the color resist layer, and forming a photoresist spacer on the common electrode layer;
  • Step 6 Pour liquid crystal molecules between the first substrate and the second substrate to form a liquid crystal layer, and package the first substrate and the second substrate.
  • the first substrate and the second substrate in the step 1 are both glass substrates.
  • a channel is formed on the first substrate by photolithography or etching.
  • the step 4 includes the steps of sequentially forming a first metal layer, a gate insulating layer, a semiconductor layer, a second metal layer, and an insulating protective layer on the first substrate.
  • the black matrix of the liquid crystal panel is disposed inside a channel formed in advance on the substrate, so that the film thickness of the liquid crystal panel becomes uniform Evenly, the display is good.
  • a channel is previously provided on the substrate before the TFT process, and a black matrix is formed in the channel, thereby making the film thickness of the liquid crystal panel uniform and improving the display effect of the display.
  • FIG. 1 is a schematic cross-sectional view of a conventional BOA type liquid crystal panel
  • FIG. 2 is a schematic cross-sectional view of a non-BOA type liquid crystal panel
  • FIG. 3 is a schematic cross-sectional view of a BOA type liquid crystal panel of the present invention.
  • FIG. 4 is a schematic flow chart of a method for fabricating a BOA type liquid crystal panel according to the present invention.
  • FIG. 5 is a cross-sectional view showing the second step of the manufacturing method of the BOA type liquid crystal panel of the present invention.
  • step 6 is a schematic plan view of step 2 of the method for fabricating a BOA type liquid crystal panel according to the present invention.
  • FIG. 7 is a schematic cross-sectional view showing a step 3 of a method for fabricating a BOA type liquid crystal panel according to the present invention.
  • step 3 is a schematic top plan view of step 3 of the method for fabricating a BOA type liquid crystal panel according to the present invention.
  • FIG. 9 is a cross-sectional view showing the step 4 of the manufacturing method of the BOA type liquid crystal panel of the present invention.
  • FIG. 10 is a cross-sectional view showing the fifth step of the method for fabricating the BOA type liquid crystal panel of the present invention.
  • the present invention provides a BOA type liquid crystal panel including a first substrate 1, a second substrate 2 disposed opposite the first substrate 1, and a black matrix 12 disposed in the first substrate 1.
  • a thin film transistor 13 disposed on the black matrix 12, a color resist layer 21 disposed on the second substrate 2, and a common electrode layer 22 disposed on the second substrate 2 and the color resist layer 21, a photoresist spacer 23 on the common electrode layer 22 between the first substrate 1 and the second substrate 2, and a liquid crystal layer 3 disposed between the first substrate 1 and the second substrate 2,
  • a channel 11 is disposed on the first substrate 1, and the black matrix 12 is disposed inside the channel 11.
  • the surface of the first substrate 1 is flush with the surface of the black matrix 12.
  • the first substrate 1 and the second substrate 2 are both glass substrates, the first substrate 1 is a TFT substrate, and the second substrate 2 is a CF substrate.
  • the thin film transistor 13 includes a first metal layer 101 disposed on the first substrate 1, a gate insulating layer 102 disposed on the first metal layer 101 and covering the first substrate 1, and a semiconductor layer on the gate insulating layer 102 103.
  • the first metal layer 101 serves as a gate of the thin film transistor 13 and the second metal layer 105 serves as a source or a drain of the thin film transistor 13.
  • the material of the gate insulating layer 102 is silicon nitride (SiNx).
  • the material of the semiconductor layer 103 is polysilicon or amorphous silicon.
  • the present invention further provides a method for fabricating a BOA type liquid crystal panel, comprising the following steps:
  • Step 1 Providing the first substrate 1 and the second substrate 2, and cleaning the first substrate 1 and the second substrate 2.
  • the first substrate 1 and the second substrate 2 are both glass substrates, the first substrate 1 is a TFT substrate, and the second substrate 2 is a CF substrate.
  • Step 2 As shown in FIG. 5 and FIG. 6, a channel 11 is formed on the first substrate 1.
  • the channel 11 is formed on the first substrate 1 by photolithography or etching according to the shape of the black matrix to be formed.
  • FIG. 6 is a partial top view of the channel 11 formed on the first substrate 1. .
  • Step 3 As shown in FIGS. 7 and 8, a black matrix 12 is formed in the channel 11.
  • the amount of black matrix material to be filled is calculated according to the depth and width of the channel 11, and the filled black matrix material fills the channel 11 exactly, and the channel after filling the black matrix material is shown in FIG. A partial top view of 11 is shown.
  • Step 4 As shown in FIG. 9, a thin film transistor 13 is formed on the black matrix 12.
  • the first metal layer 101, the gate insulating layer 102, the semiconductor layer 103, the second metal layer 105, and the insulating protective layer 106 are sequentially formed on the first substrate 1.
  • the first metal layer 101 serves as a gate of the thin film transistor 13
  • the second metal layer 105 serves as a source or a drain of the thin film transistor 13.
  • Step 5 as shown in FIG. 10, a color resist layer 21 is formed on the second substrate 2, a common electrode layer 22 is formed on the second substrate 2 and the color resist layer 21, and the common electrode layer 22 is A photoresist spacer 23 is formed thereon.
  • the photoresist spacer 23 functions to support the first substrate 1 and the second substrate 2 for maintaining the thickness of the liquid crystal layer.
  • Step 6 Pour liquid crystal molecules between the first substrate 1 and the second substrate 2 to form a liquid crystal layer 3, and package the first substrate 1 and the second substrate 2.
  • a UV glue (not shown) is applied between the first substrate 1 and the second substrate 2, and the first substrate 1 and the second substrate 2 are bonded in a vacuum environment.
  • the UV glue is cured by UV light irradiation or heating to complete the packaging of the liquid crystal panel, and the packaged liquid is completed.
  • a schematic cross-sectional view of the crystal panel is shown in FIG.
  • the film thickness of the liquid crystal panel is made uniform, and the display effect is good.
  • a channel is previously provided on the substrate before the TFT process, and a black matrix is formed in the channel, thereby making the film thickness of the liquid crystal panel uniform and improving the display effect of the display.

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Abstract

一种BOA型液晶面板及其制作方法，所述BOA型液晶面板包括第一基板（1）、与所述第一基板（1）相对设置的第二基板（2）、设于所述第一基板（1）上的黑色矩阵（12）、设于所述黑色矩阵（12）上的薄膜晶体管（13）、设于所述第二基板（2）上的色阻层（21）、设于所述第二基板（2）和色阻层（21）上的公共电极层（22）、设于所述公共电极层（22）上位于第一基板（1）与第二基板（2）之间的光阻间隔物（23）、及设于所述第一基板（1）与第二基板（2）之间的液晶层（3），通过将液晶面板的黑色矩阵（12）设于在基板上预先形成的沟道（11）内部，从而使得液晶面板的膜厚变得均匀，提高了液晶面板的显示效果。

Description

BOA型液晶面板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种BOA型液晶面板及其制作方法。
背景技术
液晶显示装置(Liquid Crystal Display，LCD)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用，如：移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕等。
现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括背光模组(Backlight module)及结合于背光模组上的液晶面板。
在TFT-LCD(Thin Film Transistor Liquid Crystal Display，薄膜晶体管液晶显示器)中，通常会在基板上制作一层BM(Black Matrix，黑色矩阵)，用于分割相邻色阻，遮挡色彩的空隙，防止漏光或者混色，将黑色矩阵制备在TFT阵列基板的技术叫做BOA(BM On Array，黑色矩阵贴附于阵列基板)，BOA可以解决上下基板错位导致遮光区域不匹配的问题，这种对曲面显示器尤其有用。
如图1所示，现有BOA型的液晶面板的制程中，直接在阵列基板100上制备一层黑色矩阵120，这样会使阵列基板100的BM区域的膜层厚度h1增加。图2所示为一种非BOA(BM on CF)型的结构，即黑色矩阵120设于CF基板200上，可见图1中BOA型的液晶面板的膜层厚度h1要大于图2中的非BOA型的液晶面板的膜层厚度h2。因此，对于BOA型液晶面板来说，由于TFT基板上设置黑色矩阵位置的膜厚增加，这导致BM区域和非BM区域的膜厚段差变大，也使得在BM和非BM区域膜层的拔模角变得更加陡峭，在进行后续金属制程的时候，会出现拔模角太大导致的断线风险，导致一些不良出现。如果增加平坦层又会增加一些额外的工艺制程，从而衍生出其他一些问题。
发明内容
本发明的目的在于提供一种BOA型液晶面板，将该液晶面板的黑色矩阵设于在基板上预先形成的沟道内部，从而使得液晶面板的膜厚变得均匀，显示效果好。
本发明的另一目的在于提供一种BOA型液晶面板的制作方法，在TFT制程之前预先在基板上设置沟道，并在沟道中形成黑色矩阵，从而使得液晶面板的膜厚变得均匀，提高显示器的显示效果。
为实现上述目的，本发明提供一种BOA型液晶面板，包括第一基板、与所述第一基板相对设置的第二基板、设于所述第一基板上的黑色矩阵、设于所述黑色矩阵上的薄膜晶体管、设于所述第二基板上的色阻层、设于所述第二基板和色阻层上的公共电极层、设于所述公共电极层上且位于第一基板与第二基板之间的光阻间隔物、及设于所述第一基板与第二基板之间的液晶层，所述第一基板上设有沟道，所述黑色矩阵设于所述沟道内部，所述第一基板表面与所述黑色矩阵表面平齐。
所述第一基板与第二基板均为玻璃基板。
所述第一基板为TFT基板，第二基板为CF基板。
所述薄膜晶体管包括设于所述第一基板上的第一金属层、设于所述第一金属层上并覆盖第一基板的栅极绝缘层、设于所述栅极绝缘层上的半导体层、设于所述半导体层上的第二金属层、及设于所述第二金属层上并覆盖第一基板的绝缘保护层。
所述栅极绝缘层的材料为氮化硅。
所述半导体层的材料为非晶硅或多晶硅。
本发明还提供一种BOA型液晶面板的制作方法，包括如下步骤：
步骤1、提供第一基板与第二基板，并对所述第一基板与第二基板进行清洗；
步骤2、在所述第一基板上制作沟道；
步骤3、在所述沟道中形成黑色矩阵；
步骤4、在所述黑色矩阵上制作薄膜晶体管；
步骤5、在所述第二基板上形成色阻层，在第二基板和色阻层上形成公共电极层，并在所述公共电极层上形成光阻间隔物；
步骤6、在所述第一基板与第二基板之间灌注液晶分子，形成液晶层，并对所述第一基板与第二基板进行封装。
所述步骤1中的第一基板与第二基板均为玻璃基板。
所述步骤2中通过光刻或蚀刻在所述第一基板上制作沟道。
所述步骤4包括依次在所述第一基板上形成第一金属层、栅极绝缘层、半导体层、第二金属层、及绝缘保护层的步骤。
本发明的有益效果：本发明的BOA型液晶面板，将该液晶面板的黑色矩阵设于在基板上预先形成的沟道内部，从而使得液晶面板的膜厚变得均 匀，显示效果好。本发明提供的BOA型液晶面板的制作方法，在TFT制程之前预先在基板上设置沟道，并在沟道中形成黑色矩阵，从而使得液晶面板的膜厚变得均匀，提高显示器的显示效果。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有BOA型液晶面板的剖面示意图；
图2为一种非BOA型液晶面板的剖面示意图；
图3为本发明BOA型液晶面板的剖面示意图；
图4为本发明BOA型液晶面板的制作方法的示意流程图；
图5为本发明BOA型液晶面板的制作方法步骤2的剖面示意图；
图6为本发明BOA型液晶面板的制作方法步骤2的俯视示意图；
图7为本发明BOA型液晶面板的制作方法步骤3的剖面示意图；
图8为本发明BOA型液晶面板的制作方法步骤3的俯视示意图；
图9为本发明BOA型液晶面板的制作方法步骤4的剖面示意图；
图10为本发明BOA型液晶面板的制作方法步骤5的剖面示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段极其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3，本发明提供一种BOA型液晶面板，包括第一基板1、与所述第一基板1相对设置的第二基板2、设于所述第一基板1内的黑色矩阵12、设于所述黑色矩阵12上的薄膜晶体管13、设于所述第二基板2上的色阻层21、设于所述第二基板2和色阻层21上的公共电极层22、设于所述公共电极层22上且位于第一基板1与第二基板2之间的光阻间隔物23、及设于所述第一基板1与第二基板2之间的液晶层3，所述第一基板1上设有沟道11，所述黑色矩阵12设于所述沟道11内部，所述第一基板1表面与所述黑色矩阵12表面平齐。
优选的，所述第一基板1与第二基板2均为玻璃基板，所述第一基板1为TFT基板，所述第二基板2为CF基板。具体地，所述薄膜晶体管13包括设于所述第一基板1上的第一金属层101、设于所述第一金属层101上并覆盖第一基板1的栅极绝缘层102、设于所述栅极绝缘层102上的半导体层 103、设于所述半导体层103上的第二金属层105、及设于所述第二金属层105上并覆盖第一基板1的绝缘保护层106。
具体的，所述第一金属层101作为薄膜晶体管13的栅极，所述第二金属层105作为薄膜晶体管13的源极或漏极。
优选的，所述栅极绝缘层102的材料为氮化硅(SiNx)。
优选的，所述半导体层103的材料为多晶硅或非晶硅。
请参阅图4，本发明还提供一种BOA型液晶面板的制作方法，包括如下步骤：
步骤1、提供第一基板1与第二基板2，并对所述第一基板1与第二基板2进行清洗。
优选的，所述第一基板1与第二基板2均为玻璃基板，所述第一基板1为TFT基板，所述第二基板2为CF基板。
步骤2、如图5与图6所示，在所述第一基板1上制作沟道11。
具体地，根据欲形成的黑色矩阵的形状，采用光刻或蚀刻在所述第一基板1上制作沟道11，图6所示为在第一基板1上制作的沟道11的局部俯视示意图。
步骤3、如图7与图8所示，在所述沟道11中形成黑色矩阵12。
具体地，根据沟道11的深度及宽度计算出所需要填充的黑色矩阵材料的量，并使得填入的黑色矩阵材料正好填满沟道11，图8所示为填充黑色矩阵材料后的沟道11的局部俯视示意图。
步骤4、如图9所示，在所述黑色矩阵12上制作薄膜晶体管13。
具体地，依次在所述第一基板1上形成第一金属层101、栅极绝缘层102、半导体层103、第二金属层105、及绝缘保护层106。所述第一金属层101作为薄膜晶体管13的栅极，所述第二金属层105作为薄膜晶体管13的源极或漏极。
步骤5、如图10所示，在所述第二基板2上形成色阻层21，在所述第二基板2和色阻层21上形成公共电极层22，并在所述公共电极层22上形成光阻间隔物23。所述光阻间隔物23起到支撑第一基板1和第二基板2的作用，用于维持液晶层的厚度。
步骤6、在所述第一基板1与第二基板2之间灌注液晶分子，形成液晶层3，并对所述第一基板1与第二基板2进行封装。
具体地，在所述第一基板1与第二基板2之间涂覆UV胶(未示出)，并在真空环境下将所述第一基板1与第二基板2进行贴合。使用UV光照射或加热使所述UV胶固化，从而完成液晶面板的封装，完成封装后的液 晶面板的剖面示意图如图3所示。
综上所述，本发明提供的BOA型液晶面板，通过将该液晶面板的黑色矩阵设于在基板上预先形成的沟道内部，从而使得液晶面板的膜厚变得均匀，显示效果好。本发明提供的BOA型液晶面板的制作方法，在TFT制程之前预先在基板上设置沟道，并在沟道中形成黑色矩阵，从而使得液晶面板的膜厚变得均匀，提高显示器的显示效果。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (12)

  1. 一种BOA型液晶面板，包括第一基板、与所述第一基板相对设置的第二基板、设于所述第一基板上的黑色矩阵、设于所述黑色矩阵上的薄膜晶体管、设于所述第二基板上的色阻层、设于所述第二基板和色阻层上的公共电极层、设于所述公共电极层上且位于第一基板与第二基板之间的光阻间隔物、及设于所述第一基板与第二基板之间的液晶层，所述第一基板上设有沟道，所述黑色矩阵设于所述沟道内部，所述第一基板表面与所述黑色矩阵表面平齐。
  2. 如权利要求1所述的BOA型液晶面板，其中，所述第一基板与第二基板均为玻璃基板。
  3. 如权利要求1所述的BOA型液晶面板，其中，所述第一基板为TFT基板，第二基板为CF基板。
  4. 如权利要求1所述的BOA型液晶面板，其中，所述薄膜晶体管包括设于所述第一基板上的第一金属层、设于所述第一金属层上并覆盖第一基板的栅极绝缘层、设于所述栅极绝缘层上的半导体层、设于所述半导体层上的第二金属层、及设于所述第二金属层上并覆盖第一基板的绝缘保护层。
  5. 如权利要求4所述的BOA型液晶面板，其中，所述栅极绝缘层的材料为氮化硅。
  6. 如权利要求4所述的BOA型液晶面板，其中，所述半导体层的材料为非晶硅或多晶硅。
  7. 一种BOA型液晶面板的制作方法，包括如下步骤：
    步骤1、提供第一基板与第二基板，并对所述第一基板与第二基板进行清洗；
    步骤2、在所述第一基板上制作沟道；
    步骤3、在所述沟道中形成黑色矩阵；
    步骤4、在所述黑色矩阵上制作薄膜晶体管；
    步骤5、在所述第二基板上形成色阻层，在所述色阻层和第二基板上形成公共电极层，并在所述公共电极层上形成光阻间隔物；
    步骤6、在所述第一基板与第二基板之间灌注液晶分子，形成液晶层，并对所述第一基板与第二基板进行封装。
  8. 如权利要求7所述的BOA型液晶面板的制作方法，其中，所述步 骤1中的第一基板与第二基板均为玻璃基板。
  9. 如权利要求7所述的BOA型液晶面板的制作方法，其中，所述步骤2中通过光刻或蚀刻在所述第一基板上制作沟道。
  10. 如权利要求7所述的BOA型液晶面板的制作方法，其中，所述步骤4包括依次在所述第一基板上形成第一金属层、栅极绝缘层、半导体层、第二金属层、及绝缘保护层的步骤。
  11. 一种BOA型液晶面板的制作方法，包括如下步骤：
    步骤1、提供第一基板与第二基板，并对所述第一基板与第二基板进行清洗；
    步骤2、在所述第一基板上制作沟道；
    步骤3、在所述沟道中形成黑色矩阵；
    步骤4、在所述黑色矩阵上制作薄膜晶体管；
    步骤5、在所述第二基板上形成色阻层，在所述色阻层和第二基板上形成公共电极层，并在所述公共电极层上形成光阻间隔物；
    步骤6、在所述第一基板与第二基板之间灌注液晶分子，形成液晶层，并对所述第一基板与第二基板进行封装；
    其中，所述步骤2中通过光刻或蚀刻在所述第一基板上制作沟道；
    其中，所述步骤4包括依次在所述第一基板上形成第一金属层、栅极绝缘层、半导体层、第二金属层、及绝缘保护层的步骤。
  12. 如权利要求11所述的BOA型液晶面板的制作方法，其中，所述步骤1中的第一基板与第二基板均为玻璃基板。
PCT/CN2015/072377 2014-11-13 2015-02-06 Boa型液晶面板及其制作方法 Ceased WO2016074353A1 (zh)

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